Substrate support unit and substrate processing apparatus including the same

Abstract

According to the present application, there is provided a substrate support unit including a base member, a clamp member loaded on the base member, and an intermediate layer between the base member and the clamp member, the intermediate layer including a joint portion formed in a partial area for joining the base member and the clamp member.

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate support unit supporting a substrate and a substrate processing apparatus including the same. BACKGROUND

[0002] In a substrate processing apparatus for semiconductor manufacturing, a substrate support unit such as an electrostatic chuck (ESC) is used to hold a substrate such as a silicon wafer within a chamber. A substrate is adsorptively fixed to a surface of an electrostatic chuck by electrostatic force generated by applying a voltage to an electrostatic electrode built in the electrostatic chuck. The electrostatic chuck includes a clamp member and a base member.

[0003] The clamp member is generally formed of a ceramic material such as alumina, and is manufactured in a form in which a plurality of ceramic plates are joined in order to build in an electrostatic electrode and a heater. That is, a plurality of ceramic plates manufactured by tape casting are sintered and joined to manufacture a joined body of the plurality of ceramic plates. By forming an electrostatic electrode and a heater pattern by coating before joining the plurality of ceramic plates, the electrostatic electrode and the heater can be built in the clamp member.

[0004] The clamp member is adhered to the base member of a metal material including a coolant flow path with a binding layer as a medium. The temperature of the substrate adsorptively fixed in the electrostatic chuck is adjusted by the heater included in the clamp member and the coolant flow path included in the base member.

[0005] A conventional binding layer generally contains an organic bonder such as silicon or acrylic. The organic bonder can prevent excessive cooling of the clamp member caused by the base member being cooled by a coolant (heat buffering effect), but has a problem of being weak against high temperatures. There is a limitation in heat resistance in a process of 150°C or more, and there is a problem that durability is easily degraded due to plasma damage, and the overall temperature of the electrostatic chuck can be non-uniformly dispersed due to such degradation phenomena. In addition, as the heat buffering effect between the base plate and the clamp member decreases due to degradation phenomena, phenomena of a decrease in adhesion and twisting or bending can occur in the joining interface of the clamp member and the base member.

[0006] As such, the organic bonder currently used has limitations in that the life span is reduced and the process temperature is increased due to non-uniformity of the temperature of the electrostatic chuck due to a decrease in heat durability, and there is a problem that the organic bonder melts during the execution of a high-temperature process. SUMMARY

[0007] The present application is to solve the above problems, and an object thereof is to provide a substrate support unit including an intermediate layer having a heat buffering effect while having stability at high temperatures.

[0008] In addition, an object of the present application is to provide a substrate support unit capable of adjusting the heat transfer performance of an intermediate layer.

[0009] The objects of the present application are not limited to the foregoing, and other objects and advantages of the present application not mentioned above can be understood from the following description.

[0010] According to an embodiment of the present application, a method of manufacturing a substrate support unit for supporting a substrate can be provided. The method of manufacturing a substrate support unit can include a preparation step of preparing a jig member for supporting a substrate and a base member disposed under the jig member, and a bonding step of bonding a portion of a bottom surface of the jig member and a portion of an upper surface of the base member corresponding to the portion of the bottom surface of the jig member by brazing.

[0011] In an embodiment, the bonding step can include a metalizing step of metalizing the portion of the bottom surface of the jig member, and a brazing step of bonding the metalized portion and the upper surface of the base member by brazing.

[0012] In an embodiment, the metalizing step can include a step of depositing a metal film on the bottom surface of the jig member by vacuum deposition or plating. In addition, the metal film can be formed on a portion of the bottom surface of the jig member by patterning.

[0013] In an embodiment, the brazing step can provide a filler of a metal material between the jig member and the base member, and bond the jig member and the base member with the filler as a medium.

[0014] In an embodiment, the preparation step can include a step of forming at least one gas injection portion for supplying a gas to a space between the base member and the jig member.

[0015] In an embodiment, the portion can include a minimum area for bonding and fixing the base member and the jig member. Thus, thermal stress caused by a difference in thermal expansion rates of the base member and the jig member can be minimized.

[0016] According to an embodiment of the present application, a substrate support unit can be provided, including a base member, a jig member loaded on the base member, and an intermediate layer between the base member and the jig member, the intermediate layer including a bonding portion formed on a portion for bonding the base member and the jig member.

[0017] In an embodiment, the joining portion can be formed by metalizing a bottom surface of the clamp member and joining the metalized bottom surface to the base member by brazing. The joining portion can be formed only in a portion of the intermediate layer.

[0018] In an embodiment, the joining portion can be formed by metalizing a portion of a bottom surface of the clamp member, and fixing the clamp member and the base member by providing a filler of a metal material between the metalized portion and the base member as a medium.

[0019] In an embodiment, the joining portion can include a first region corresponding to an edge region of the base member and the clamp member.

[0020] In an embodiment, the joining portion can include a second region corresponding to a surrounding region surrounding a plurality of holes passing through the base member and the clamp member.

[0021] In an embodiment, the intermediate layer can further include a heat transfer portion including an internal space formed by the joining portion.

[0022] In an embodiment, the base member can be formed with a gas injection portion for injecting a heat transfer gas into the heat transfer portion.

[0023] In an embodiment, the substrate support unit can further include a controller for controlling a pressure of the heat transfer gas injected into the heat transfer portion through the gas injection portion.

[0024] In an embodiment, the heat transfer gas can be helium (He) gas.

[0025] According to an embodiment of the present application, a substrate processing apparatus can include a housing, a showerhead unit disposed inside the housing and supplying a process gas for processing a substrate into the housing, a substrate support unit disposed below the showerhead unit in the housing, and a plasma generating unit generating plasma using the process gas for processing the substrate. The substrate support unit can include a base member, a clamp member loaded on the base member, and an intermediate layer between the base member and the clamp member, the intermediate layer including a joining portion formed in a portion for joining the base member and the clamp member.

[0026] According to an embodiment of the present application, an intermediate layer disposed between a base member and a clamp member includes a joining portion using a local brazing method, thereby minimizing thermal stress of the intermediate layer.

[0027] In addition, according to the embodiment of the present application, the intermediate layer includes a closed space, i.e., a heat transfer portion, formed by the joint portion, and the heat buffering effect can be improved by injecting a heat transfer gas into the heat transfer portion.

[0028] In addition, according to the embodiment of the present application, the heat transfer performance of the heat transfer portion can be adjusted by adjusting the pressure adjustment of the heat transfer gas injected into the heat transfer portion.

[0029] However, the effects of the present application are not limited to those mentioned above, and it will be apparent to those having ordinary knowledge in the art to which the present application pertains that other effects not mentioned above can be clearly understood from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus according to an embodiment of the present application.

[0031] Figure 2 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus according to another embodiment of the present application.

[0032] Figure 3 is a cross-sectional view for explaining a substrate support unit according to an embodiment of the present application.

[0033] Figure 4 is a separation view schematically presenting Figure 3 constituent elements.

[0034] Figure 5 is a plan view presenting Figure 3 an embodiment of the intermediate layer.

[0035] Figure 6 is a flowchart showing a substrate support unit manufacturing method.

[0036] (Explanation of Reference Numerals)

[0037] 100: Substrate processing apparatus

[0038] 110: Housing

[0039] 120: Electrostatic chuck (substrate support unit)

[0040] 121: Base member

[0041] 122: Clamping member

[0042] 130: Plasma generating unit

[0043] 140: Showerhead unit

[0044] 150: First gas supply unit

[0045] 160: Second gas supply unit

[0046] 170: wall lining unit

[0047] 180: baffle unit

[0048] 190: upper mold set

[0049] 210: joint

[0050] 211: metal film

[0051] 212: filler

[0052] 220: heat transfer portion

[0053] 222: gas injection portion

[0054] 230: controller DETAILED DESCRIPTION

[0055] Hereinafter, embodiments of the present application will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present application pertains can easily practice the present application. However, the present application can be implemented in various different ways and is not limited to the embodiments described herein.

[0056] In describing the embodiments of the present application, when it is judged that specific description for related well-known functions or structures unnecessarily confuses the gist of the present application, the specific description thereof is omitted, and parts having similar functions and effects are designated by the same reference numerals throughout the drawings.

[0057] At least a part of the terms used in the specification are defined in consideration of the functions in the present application, and thus can vary according to the user, operator intention, custom, etc. Therefore, the terms should be interpreted based on the contents throughout the specification.

[0058] In addition, in the present specification, the singular form also includes the plural form unless it is specifically mentioned in the sentence. In the specification, when it is said to include a certain constituent element, it means that other constituent elements can also be included unless it is specifically mentioned to the contrary. Also, when it is said that a certain part is connected (or coupled) to another part, it includes not only the case where the certain part is directly connected (or coupled) to the other part but also the case where the certain part is indirectly connected (or coupled) to the other part through another part.

[0059] On the other hand, in the drawings, the size or shape of the constituent elements, the thickness of the lines, etc. can be somewhat exaggerated for the sake of convenience in understanding.

[0060] Embodiments of the present application are described with reference to schematic drawings of idealized embodiments of the present application. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments of the present application should not be construed as limited to the particular shapes of regions illustrated in the drawings, which are schematic. The intent is to convey equivalent functionality, and the drawings are intended to be exemplary rather than limiting.

[0061] Referring to elements or layers as being "on" or "above" another element or layer includes both the case where the element or layer is directly on or above another element or layer, and the case where another layer or element is interposed therebetween. Conversely, referring to an element as being "directly on" or "directly above" another element or layer means that no other element or layer is interposed therebetween.

[0062] Spatially relative terms, such as "below", "beneath", "lower", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. Spatially relative terms can be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the example term "below" can encompass both an orientation of above and below. The devices can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0063] While first, second, etc. are used herein to describe various elements, components, and / or parts for ease of description, the elements, components, and / or parts are not limited to these terms. These terms are simply used to differentiate one element, component, or part from another. Thus, a first element, component, or part as mentioned below can of course also be a second element, component, or part within the technical concept of the present application.

[0064] Hereinafter, embodiments of the present application will be described in detail with reference to the accompanying drawings. In the following description, identical or corresponding components are given the same reference numerals regardless of the reference numerals, and repeated description thereof will be omitted.

[0065] The present invention relates to a substrate support unit including a joint portion in which a base member and a clamp member are partially bonded, and an intermediate layer having a heat transfer portion formed by the joint portion. In particular, the present invention relates to a substrate support unit and a substrate processing apparatus including the same, which can adjust heat transfer performance by securing high-temperature stability and adjusting the pressure of a heat transfer gas injected to a heat transfer portion formed by a joint portion formed by partial metalize brazing. Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

[0066] Figure 1 FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus according to an embodiment of the present invention.

[0067] Referring to Figure 1 , the substrate processing apparatus 100 can include a housing 110, a substrate support unit 120, a plasma generating unit 130, a shower head unit 140, a first gas supply unit 150, a second gas supply unit 160, a wall liner unit 170, a baffle unit 180, and an upper mold block 190.

[0068] The substrate processing apparatus 100 is a system for processing a substrate W (e.g., a wafer) using an etching process (e.g., a dry etching process) in a vacuum environment. The substrate processing apparatus 100 can process the substrate W using, for example, a plasma process.

[0069] The housing 110 provides a space in which a plasma process is performed. Such a housing 110 can be provided with an exhaust hole 111 at a lower portion thereof.

[0070] The exhaust hole 111 can be connected with an exhaust line 113 in which a pump 112 is installed. Such an exhaust hole 111 can exhaust byproducts generated during a plasma process and gas remaining in the inside of the housing 110 to the outside of the housing 110 through the exhaust line 113. In this case, the inside space of the housing 110 can be depressurized to a predetermined pressure.

[0071] The housing 110 can form an opening portion 114 at a sidewall thereof. The opening portion 114 can function as a passage through which the substrate W enters and exits the inside of the housing 110. Such an opening portion 114 can be configured to be opened and closed by a door unit 115.

[0072] The door unit 115 can be configured with an outer door 115a and a door driver 115b. The outer door 115a is provided to an outer wall of the housing 110. Such an outer door 115a can be moved in the up-down direction (i.e., the third direction 30) by the door driver 115b. The door driver 115b can operate with a motor, an oil pressure cylinder, an air pressure cylinder, or the like.

[0073] The substrate support unit 120 is provided to an inner lower region of the housing 110. Such a substrate support unit 120 can support the substrate W with electrostatic force. However, the present embodiment is not limited thereto. The substrate support unit 120 can also support the substrate W by various means such as mechanical clamping, vacuum, or the like.

[0074] When the substrate W is supported with electrostatic force, the substrate support unit 120 can be implemented by an electro-static chuck (ESC) including a base component 121 and a chucking component 122.

[0075] The base component 121 supports the chucking component. The base component 121 can be provided as an Al base plate, for example, manufactured with an aluminum component as a material.

[0076] The chucking component 122 supports the substrate W placed thereon with electrostatic force. Such a chucking component 122 can be provided as a ceramic plate or a ceramic puck, for example, manufactured with a ceramic component as a material, and can be combined with the base component 121 to be fixed to the base component 121.

[0077] An intermediate layer 200 can be formed between the base component 121 and the chucking component 122 formed thereon, and the intermediate layer 200 can include a junction 210 that joins the base component 121 and the chucking component 122, and a heat transfer portion 220. A more detailed description of the intermediate layer 200 will be described later.

[0078] The chucking component 122 can also be provided to be movable in the up-down direction (i.e., the third direction 30) inside the housing 110 by a driving component (not shown). When the chucking component 122 is thus formed to be movable in the up-down direction, the substrate W can be positioned in a region where a more uniform plasma distribution is exhibited.

[0079] The ring assembly 123 can be provided to surround the chuck member 122. Such a ring assembly 123 can be provided in a ring shape, and configured to support a peripheral area of the substrate W. The ring assembly 123 can include a focus ring 123a and an insulating ring 123b to constitute.

[0080] The focus ring 123a is formed at an inner side of the insulating ring 123b, and provided to surround the chuck member 122. Such a focus ring 123a can be provided in a silicon material, and can concentrate plasma to the substrate W.

[0081] The insulating ring 123b is formed at an outer side of the focus ring 123a, and provided to surround the focus ring 123a. Such an insulating ring 123b can be provided in a quartz material.

[0082] On the other hand, the ring assembly 123 can further include an edge ring (not shown) formed to surround the focus ring 123a. The edge ring can be formed to prevent a side surface of the chuck member 122 from being damaged by plasma.

[0083] The first gas supply unit 150 supplies a first gas to remove foreign substances remaining at an upper side of the ring assembly 123 or a peripheral portion of the chuck member 122. Such a first gas supply unit 150 can be constituted of a first gas supply source 151 and a first gas supply line 152.

[0084] The first gas supply source 151 can supply nitrogen gas (N2 gas) as the first gas. However, the present embodiment is not limited thereto. The first gas supply source 151 can also supply other gas or a cleaning agent, etc.

[0085] The first gas supply line 152 is provided between the chuck member 122 and the ring assembly 123. The first gas supply line 152 can be formed, for example, to be connected between the chuck member 122 and the focus ring 123a.

[0086] On the other hand, the first gas supply line 152 can also be provided inside the focus ring 123a, and bent to be connected between the chuck member 122 and the focus ring 123a.

[0087] The heating member 124 and the cooling member 125 are provided to enable the substrate W to maintain a process temperature when an etching process is performed in the inside of the housing 110. The heating member 124 can be provided with an electric heater for this purpose, and the cooling member 125 can be provided with a cooling line through which a coolant flows for this purpose.

[0088] The heating member 124 and the cooling member 125 can be provided inside the electrostatic chuck 120 in order to enable the substrate W to be maintained at a process temperature. As an example, the heating member 124 can be provided inside the clamp member 122, and the cooling member 125 can be provided inside the base member 121.

[0089] On the other hand, the cooling member 125 can receive a coolant by means of a chiller 126. The chiller 126 can be provided outside the housing 110.

[0090] A pinhole 127 can be formed inside the substrate support unit 120. The pinhole 127 can vertically pass through the base member 121 and the clamp member 122. The pinhole 127 can be formed in plural. The pinhole 127 can be arranged in plural in the circumferential direction of the clamp member 122. For example, three pinholes 127 can be arranged at 120-degree intervals in the circumferential direction of the clamp member 122. In addition to this, four pinholes 127 can be formed and arranged at 90-degree intervals in the circumferential direction of the clamp member 122, or the like.

[0091] A lift pin (not shown) can be accommodated inside the pinhole 127. The lift pin (not shown) can load the substrate W to or unload the substrate W from the clamp member 122 by ascending and descending actions. The lift pin (not shown) supports the substrate.

[0092] The lift pin (not shown) is provided in plural in a manner corresponding to the number of the pinholes 127, and the diameter of the lift pin is formed to be slightly smaller than the diameter of the pinhole 127. Specifically, the diameter of the lift pin can be set to a diameter at which the lift pin does not come into contact with the inner side wall of the pinhole 127 when the lift pin and the pinhole 127 are arranged to have the same center axis.

[0093] The lift pin can be driven in the up-and-down direction by a separate driving unit.

[0094] The plasma generation unit 130 causes plasma to be generated from a gas remaining in a discharge space. Here, the discharge space means a space located above the electrostatic chuck 120 in the internal space of the housing 110.

[0095] The plasma generation unit 130 can generate plasma in the discharge space inside the housing 110 by means of an inductively coupled plasma (ICP) source. In this case, the plasma generation unit 130 can use an antenna unit 193 provided to the upper mold block 190 as an upper electrode, and use the electrostatic chuck 120 as a lower electrode.

[0096] However, the present embodiment is not limited thereto. The plasma generating unit 130 may also generate plasma in the discharge space inside the housing 110 using a capacitively coupled plasma (CCP) source. In this case, the plasma generating unit 130 may be configured as follows: Figure 2 As shown, the showerhead unit 140 is used as an upper electrode, and the electrostatic chuck 120 is used as a lower electrode. Figure 2 is a cross-sectional view schematically showing the configuration of a substrate processing apparatus according to another embodiment of the present invention.

[0097] Refer again Figure 1 Provide explanation.

[0098] The plasma generating unit 130 may include an upper electrode, a lower electrode, an upper power source 131 , and a lower power source 133 .

[0099] The upper power source 131 applies power to the upper electrode, ie, the antenna unit 193. Such an upper power source 131 may be provided to control the characteristics of the plasma. For example, the upper power source 131 may be provided to adjust ion bombardment energy.

[0100] On power 131 Figure 1 A single upper power source 131 is shown in the figure, but a plurality of upper power sources may be provided in this embodiment. When a plurality of upper power sources 131 are provided, the substrate processing apparatus 100 may further include a first matching network (not shown) electrically connected to the plurality of upper power sources.

[0101] The first matching network can match the frequency powers of different magnitudes input from the respective upper power sources and apply them to the antenna unit 193 .

[0102] On the other hand, a first impedance matching circuit (not shown) may be arranged on the first transmission line 132 connecting the power source 131 and the antenna unit 193 for the purpose of impedance matching.

[0103] The first impedance matching circuit may function as a lossless manual circuit to allow power to be efficiently (ie, maximally) transferred from the upper power source 131 to the antenna unit 193 .

[0104] The lower power supply 133 can apply power to the lower electrode, ie, the electrostatic chuck 120. The lower power supply 133 can function as a plasma source for generating plasma, or function together with the upper power supply 131 to control plasma characteristics.

[0105] Power 133 Figure 1 A single one is shown in the figure, but it can also be provided in multiple numbers, similar to the upper power supply 131. When multiple lower power supplies 133 are provided, a second matching network (not shown) electrically connected to the multiple lower power supplies can also be included.

[0106] The second matching network can match the different sizes of frequency power input from the respective lower power sources and apply to the electrostatic chuck 120.

[0107] On the other hand, a second impedance matching circuit (not shown) can be arranged on the second transmission line 134 connecting the lower power source 133 and the electrostatic chuck 120 for the purpose of impedance matching.

[0108] The second impedance matching circuit can function as a lossless manual circuit as the first impedance matching circuit to effectively (i.e., maximally) transfer electric energy from the lower power source 133 to the electrostatic chuck 120.

[0109] The showerhead unit 140 can be disposed to face the electrostatic chuck 120 upward and downward on the inside of the housing 110. Such a showerhead unit 140 can have a plurality of gas feeding holes 141 for spraying gas to the inside of the housing 110, and can be provided to have a larger diameter than the electrostatic chuck 120.

[0110] On the other hand, the showerhead unit 140 can be manufactured with a silicon component as a material, or can be manufactured with a metal component as a material.

[0111] The second gas supply unit 160 supplies a process gas (second gas) to the inside of the housing 110 through the showerhead unit 140. Such a second gas supply unit 160 can include a second gas supply source 161 and a second gas supply line 162.

[0112] The second gas supply source 161 supplies an etching gas for processing the substrate W as a process gas. Such a second gas supply source 161 can supply a gas containing a fluorine component (e.g., SF6, CF4, etc.) as an etching gas.

[0113] The second gas supply source 161 can be provided as a single unit to supply the etching gas to the showerhead unit 140. However, the present embodiment is not limited thereto. The second gas supply source 161 can also be provided as a plurality of units to supply the process gas to the showerhead unit 140.

[0114] The second gas supply line 162 connects the second gas supply source 161 and the showerhead unit 140. The second gas supply line 162 transfers the process gas supplied by the second gas supply source 161 to the showerhead unit 140 to enable the etching gas to flow into the inside of the housing 110.

[0115] On the other hand, when the showerhead unit 140 is divided into a center zone, a middle zone, an edge zone, and the like, the second gas supply unit 160 can further include a gas distributor (not shown) and a gas distribution line (not shown) in order to supply process gases to the respective zones of the showerhead unit 140.

[0116] The gas distributor distributes the process gas supplied from the second gas supply source 161 to the respective zones of the showerhead unit 140. Such a gas distributor can be connected with the second gas supply source 161 through the second gas supply line 162.

[0117] The gas distribution line connects the gas distributor and the respective zones of the showerhead unit 140. The gas distribution line can thereby deliver the process gas distributed by the gas distributor to the respective zones of the showerhead unit 140.

[0118] On the other hand, the second gas supply unit 160 can further include a third gas supply source (not shown) that supplies a deposition gas.

[0119] The third gas supply source supplies the deposition gas to the showerhead unit 140 in a manner that can protect the side surface of the pattern of the substrate W from anisotropic etching. Such a second gas supply source can supply C4F8, C2F4, or the like as the deposition gas.

[0120] The wall liner unit 170 serves to protect the inner side surface of the housing 110 from an arc generated in a process of exciting a process gas, impurities generated in a substrate processing process, and the like. Such a wall liner unit 170 can be provided in a cylindrical shape that is open at the upper and lower portions, respectively, inside the housing 110.

[0121] The wall liner unit 170 can be provided adjacent to the inner side wall of the housing 110. Such a wall liner unit 170 can have a support ring 171 at the upper portion thereof. The support ring 171 can be formed to protrude outward in the first direction 10, i.e., in the upward direction, at the upper portion of the wall liner unit 170, and placed at the upper end of the housing 110 to support the wall liner unit 170.

[0122] The baffle unit 180 serves to discharge process by-products, unreacted gases, and the like of plasma. Such a baffle unit 180 can be disposed between the inner side wall of the housing 110 and the electrostatic chuck 120.

[0123] The baffle unit 180 can be provided in a ring shape, and have a plurality of through-holes penetrating in the upward and downward directions, i.e., in the third direction 30. The baffle unit 180 can control the flow of process gases according to the number and shape of the through-holes.

[0124] The upper mold assembly 190 is provided to cover the open upper portion of the housing 110. Such an upper mold assembly 190 can include a window member 191, an antenna member 192, and an antenna unit 193.

[0125] The window member 191 is formed to cover the upper portion of the housing 110 in order to seal the internal space of the housing 110. Such a window member 191 can be provided in a disc (e.g., a circular disc) shape, and can be formed with an insulating material (e.g., aluminum oxide (AI2O3)) as a material.

[0126] The window member 191 can be formed to include a dielectric window. The window member 191 can form a through-hole for insertion of the second gas supply line 162, and a coating film can be formed on a surface thereof in order to suppress generation of particles when a plasma process is performed in the interior of the housing 110.

[0127] The antenna member 192 can be provided above the window member 191, and provide a space of a predetermined size to enable the antenna unit 193 to be disposed therein.

[0128] The antenna member 192 can be formed in a cylindrical shape with an open lower portion, and can be provided to have a diameter corresponding to the housing 110. The antenna member 192 can be provided to be detachable from the window member 191.

[0129] The antenna unit 193 functions as an upper electrode, and is installed to be provided to form a closed coil. Such an antenna unit 193 functions to generate a magnetic field and an electric field in the interior of the housing 110 based on power supplied from the upper power source 131, such that gas flowing into the interior of the housing 110 through the shower head unit 140 is excited to plasma.

[0130] The antenna unit 193 can be installed with a coil in a planar spiral form. However, the present embodiment is not limited thereto. The configuration or size of the coil, etc. can be variously changed by one having ordinary knowledge in the art.

[0131] Hereinafter, an intermediate layer between the upper clamp member and the lower base member will be described.

[0132] Figure 3 and Figure 4 is a view schematically showing a substrate support unit according to an embodiment of the present application. A part of the components of the substrate support unit is omitted for convenience of explanation. Also, the thickness of the joint portion 210 is illustrated to be thick for convenience of explanation, but can be formed to be thinner in practice.

[0133] Referring to Figure 3The substrate support unit 120 can include an intermediate layer 200 between the base member 121 and the clamp member 122. The intermediate layer 200 can include a bonding portion 210 and a heat transfer portion 220. For example, the base member 121 can be an Al-based base plate, and the clamp member can be an Al2O3-based ESC ceramic.

[0134] The electrostatic chuck according to an embodiment of the present application can have the same area of the upper surface of the base member 121 and the lower surface of the clamp member 122. However, the present embodiment is not limited thereto.

[0135] The intermediate layer 200 can be formed to have an area corresponding to the area of the upper portion of the base member 121 between the base member 121 and the clamp member 122. Alternatively, although not shown in detail, the intermediate layer 200 can be formed to have a smaller area than the upper surface of the base member 121. The intermediate layer 200 can be formed in a center region between the base member 121 and the clamp member 122.

[0136] The bonding portion 210 is a region where the base member 121 and the clamp member 122 are bonded by brazing. The bonding portion 210 can be formed in a partial region, rather than the entire region of the intermediate layer 200.

[0137] Referring to Figure 4 The bonding portion 210 can be formed by metalizing a partial region of the bottom surface of the clamp member 122 formed of a non-conductive material, and bonding the metalized region to the base member 121 by brazing. The metalization can be performed by vacuum evaporation or plating of a metal film 211 on the bottom surface of the clamp member 122. The metal film 211 can be patterned on a partial region of the bottom surface of the clamp member 122. For example, the metal film 211 can be any one of an Al, Cu, Ti, Ni, Ag series.

[0138] To combine the metalized area of the bottom surface of the clamp member 122 and the base member 121 formed of an electrically conductive material, a filler 212 of a metal material can be provided. As an example, the filler 212 can include aluminum (Al). The filler 212 can be used as a medium to perform a brazing process to combine the metalized area of the bottom surface of the clamp member 122 and the base member 121. In brief, the brazing process can form a strong joint by inserting the filler 212 between the base member 121 and the clamp member 122 to be joined, heating the filler 212 to a temperature sufficient to melt, and forming a strong joint as the molten filler 212 cools. The base member 121 and the clamp member 122 can be combined by brazing. The base member 121 and the clamp member 122 are combined by brazing, and thus the substrate support unit 120 can have high heat resistance during a high-temperature process.

[0139] The filler 212 can be provided as a metal having a lower melting point than the metal film 211 of the bottom surface of the clamp member 122 and the base member 121.

[0140] On the other hand, to minimize thermal stress caused by a difference in thermal expansion rates of the base member 121 and the clamp member 122, the joint 210 can be formed in a minimum area capable of combining and fixing the base member 121 and the clamp member 122.

[0141] Figure 5 FIG. 2 is a plan view illustrating an embodiment in which the joint 210 is formed in a partial area of the intermediate layer 200.

[0142] Referring to Figure 5 The joint 210 can include an area corresponding to a peripheral area (edge region) of the base member 121. That is, the joint 210 can include a first area A1 having a circular shape with an outer diameter identical to a diameter of the base member 121. Through the joint 210 formed in the first area A1, a sealed space can be formed in a central area of the intermediate layer 200, which is externally cut off.

[0143] In addition, the joint 210 can further include a second area A2 corresponding to a peripheral area surrounding a plurality of holes to be formed in the base member 121 and the clamp member 122. For example, the second area A2 can include a circular area having an inner diameter identical to a diameter of the pin hole 127 and surrounding the pin hole 127. In addition, although not illustrated in detail, the second area A2 can further include an area corresponding to a peripheral area of a plurality of gas supply holes for supplying heat transfer gas (e.g., helium) to the bottom surface of the substrate W. The second area A2 can further include a circular area having an inner diameter identical to a diameter of the gas supply hole and surrounding the gas supply hole.

[0144] The intermediate layer 200 can include a closed space between the base member 121 and the clamp member 122 according to the joint 210 formed in a partial region. That is, a region of the intermediate layer 200 except for the joint 210 can include an internal space.

[0145] As described above, by forming the joint 210 as a region that can combine the base member 121 and the clamp member 122 to a minimum extent, thermal stress caused by a difference in thermal expansion rates of the base member 121 and the clamp member 122 can be minimized. By minimizing the thermal stress caused by the difference in thermal expansion rates, a phenomenon of cracking, a bending phenomenon, or the like of the clamp member 122 caused by the difference in thermal expansion can be prevented.

[0146] The heat transfer portion 220 can include a closed space formed in the intermediate layer 200 by the joint 210 formed in a partial region. That is, the base member 121 and the clamp member 122 can be separated by the heat transfer portion 220. By injecting a heat transfer gas into the closed space, heat transfer characteristics of the intermediate layer 200 can be improved.

[0147] In order to inject the heat transfer gas into the heat transfer portion 220, at least one gas injection portion 222 can be formed in the base member 121. The gas injection portion 222 can be connected to the gas storage portion 221 through a supply line. The heat transfer gas is stored in the gas storage portion 221. The heat transfer gas includes an inert gas. As an example, the heat transfer gas can be helium (He) gas. The helium gas can be supplied to the heat transfer portion 220 through the gas injection portion 222 and fill the heat transfer portion 220. The helium gas can function as a medium that transfers cooling heat of the base member 121 to the clamp member 122. In addition, by a thermal buffering effect, thermal shock caused by a temperature difference between the base member 121 and the clamp member 122 can be further buffered.

[0148] The pressure of the helium gas injected into the heat transfer portion 220 through the gas injection portion 222 can be controlled by a controller 230. The controller 230 can be connected to the gas storage portion 221 and control the flow rate of the helium gas supplied to each supply line. Thereby, the pressure of the helium gas present in the heat transfer portion 220 can be controlled. The thermal conductivity of the helium gas increases as the pressure becomes greater. Therefore, the heat transfer performance can be adjusted by controlling the pressure of the helium gas.

[0149] On the other hand, the heat transfer portion 220 can also be formed by under-cutting a region except for the joint 210 to a depth of 0.1 mm to 1 mm.

[0150] On the other hand, it can be easy to adjust the heat transfer performance according to regions by dividing the heat transfer portion 220 into a plurality of regions using a method of expanding the joint 210 region or the like.

[0151] In the present embodiment, it is illustrated that the joint portion 210 includes the metal film 211 formed on the bottom surface of the clamp member 122 and the filler 212, but the joint portion 210 can further include a second metal film formed on the upper surface of the base member 121 in a region corresponding to the region in which the metal film 211 is formed. In addition, the metal film 211 and the filler 212 can be formed in a flat plate shape, but in order to smoothly join, can also be formed in a mesh shape.

[0152] Hereinafter, a method of manufacturing the substrate support unit described above will be described. Figure 6 is a flowchart for explaining a method of manufacturing a substrate support unit according to an embodiment of the present application.

[0153] The method of manufacturing a substrate support unit according to an embodiment of the present application can include a base member and a clamp member preparation step (S10), a metalizing step (S20), a brazing step (S30), and a jointing step (S40) of the base member and the clamp member.

[0154] The preparation step (S10) is a step of preparing the base member 121 below and the clamp member 122 including a non-conductive material to be loaded to the base member 121. For example, the base member 121 can be an aluminum base plate including an aluminum component. The clamp member 122 supports a substrate W placed above using electrostatic force. Such a clamp member 122 can be manufactured using a ceramic component as a material to be provided as a ceramic plate or a ceramic puck, and can be combined with the base member 121 to be fixed to the base member 121.

[0155] The preparation step (S10) according to an embodiment of the present application can include a step of forming a gas injection portion 222 for supplying gas to a space between the base member 121 and the clamp member 122. The gas injection portion 222 can be formed to penetrate the base member 121. The gas injection portion 222 penetrating the base member 121 can be formed in at least one.

[0156] The metalizing step (S20) can include a step of metalizing a portion of the bottom surface of the jig member. At this time, the portion can be a minimum area in which the base member 121 and the jig member 122 can be combined and fixed. The metalizing step (S20) can include a step of evaporating a metal film 211 on the bottom surface of the jig member 122 by vacuum evaporation or plating. The metal film 211 can be patterned on a portion of the bottom surface of the jig member 122. For example, the metal film 211 can be any one of an aluminum (Al), a copper (Cu), a titanium (Ti), a nickel (Ni), and a silver (Ag) series. The metalizing step (S20) can also include a step of metalizing a portion of the upper surface of the base member.

[0157] The brazing step (S30) is a step of combining the metalized portion of the bottom surface of the jig member 122 and the base member 121. The brazing step (S30) can include a step of providing a filler 212 between the jig member 122 and the base member 121 and a step of combining the jig member 122 and the base member 121 with the filler 212 as a medium. As an example, the filler 212 can include aluminum (Al). The filler 212 can be provided as a medium, and a brazing process can be performed to combine the metalized portion of the bottom surface of the jig member 122 and the base member 121. In brief, after the filler 212 is inserted between the base member 121 and the jig member 122 to be combined, the filler 212 is heated to a temperature sufficient to melt, and a strong junction 210 is formed as the molten filler 212 cools. The filler 212 can be provided as a metal having a lower melting point than the metal film 211 of the bottom surface of the jig member 122 and the base member 121.

[0158] The base member 121 and the jig member 122 can be combined (S40) through the metalizing step (S20) and the brazing step (S30). As the base member 121 and the jig member 122 are combined by brazing, the substrate support unit 120 can have high heat resistance at the time of a high-temperature process.

[0159] On the other hand, in order to minimize thermal stress caused by a difference in thermal expansion rates of the base member 121 and the jig member 122, a junction 210 can be formed in a portion between the base member 121 and the jig member 122. The junction 210 can be formed in a minimum area in which the base member 121 and the jig member 122 can be combined and fixed. The junction 210 can include a first region A1 corresponding to a peripheral region (edge region) of the base member 121 and a second region A2 corresponding to a peripheral region surrounding a plurality of holes to be formed in the base member 121 and the jig member 122.

[0160] In the space formed between the base member 121 and the jig member 122 by the first region Al, a heat transfer gas can be supplied through the gas injection portion 222. As an example, the heat transfer gas can be helium (He) gas. The helium gas can fill the space formed between the base member 121 and the jig member 122 by the first region Al. The helium gas can function as a medium for transferring the cooling heat of the base member 121 to the jig member 122. In addition, by the heat buffering effect, it is possible to further buffer the thermal shock caused by the temperature difference between the base member 121 and the jig member 122.

[0161] In addition, the thermal conductivity of helium gas increases as the pressure becomes greater, so it is possible to control the pressure of the helium gas injected into the space between the base member 121 and the jig member 122 through the gas injection portion 222, thereby adjusting the heat transfer performance. In addition, it is easy to adjust the heat transfer performance by region by dividing the heat transfer portion 220 into a plurality of regions using a method of expanding the region of the joint portion 210, and the like.

[0162] The above description is merely illustrative of the technical concept of the present application, and those having ordinary knowledge in the technical field to which the present application pertains can make various modifications and changes within the scope of the essential characteristics of the present application. Therefore, the embodiments described in the present application are for explaining the technical concept of the present application and are not intended to limit the present application, and the scope of the technical concept of the present application is not limited by such embodiments. The scope of protection of the present application should be interpreted according to the appended claims, and should be interpreted as including all technical concepts within the equivalent scope thereof.

Claims

1. A method for manufacturing a substrate support unit for supporting a substrate, wherein: The substrate support unit manufacturing method comprises: a preparation step of preparing a jig member for supporting the substrate and a base member disposed below the jig member; and a joining step of joining a portion of the bottom surface of the clamp member and a portion of the upper surface of the base member corresponding to the portion of the bottom surface of the clamp member by brazing to form a joint portion; The joint is formed by: After a portion of the bottom surface of the clamp component is metallized, a metal filler is provided between the metallized area and the base component as a medium to fix the clamp component and the base component. The joint comprises: a first ring-shaped region corresponding to edge regions of the base member and the clamp member and forming a closed space cut off from the outside in a central region of the intermediate layer; and The second area corresponds to a peripheral area surrounding the plurality of holes penetrating the base member and the clamp member and is located in the closed space.

2. The method for manufacturing a substrate support unit according to claim 1, wherein: The metallization step comprises: The step of depositing a metal film on a portion of the bottom surface of the fixture component by vacuum evaporation or coating.

3. The method for manufacturing a substrate support unit according to claim 1, wherein: The preparation steps include: a step of forming at least one gas injection portion for supplying gas to a space between the base member and the jig member.

4. The method for manufacturing a substrate support unit according to claim 1, wherein: The part of the area includes: A minimum area is required for combining and fixing the base member and the clamp member.

5. A substrate supporting unit comprising: Base components; a fixture component, loaded onto the base component; as well as an intermediate layer, located between the base component and the clamp component, The intermediate layer includes: The joint is formed by brazing in a partial area in order to connect the base member and the clamp member. The joint is formed by: After a portion of the bottom surface of the clamp component is metallized, a metal filler is provided between the metallized area and the base component as a medium to fix the clamp component and the base component. The joint comprises: a first ring-shaped region corresponding to edge regions of the base member and the clamp member and forming a closed space cut off from the outside in a central region of the intermediate layer; and The second area corresponds to a peripheral area surrounding the plurality of holes penetrating the base member and the clamp member and is located in the closed space. The substrate supporting unit according to claim 5 , wherein: The intermediate layer further comprises: The heat transfer portion includes an inner space formed by the joint portion.

7. The substrate supporting unit according to claim 6, wherein: The base member is formed with a gas injection portion for injecting a heat transfer gas into the heat transfer portion.

8. The substrate supporting unit according to claim 7, wherein: The substrate supporting unit further comprises: A controller is used to control the pressure of the heat transfer gas injected into the heat transfer part through the gas injection part.

9. The substrate supporting unit according to claim 8, wherein: The heat transfer gas is helium.

10. A substrate processing device comprising: shell; a showerhead unit disposed inside the housing and supplying a process gas for processing a substrate into the housing; a substrate supporting unit disposed below the nozzle unit in the interior of the housing; as well as a plasma generating unit for generating plasma using the process gas in order to process the substrate; The substrate supporting unit comprises: Base components; a fixture component loaded onto the base component; and an intermediate layer, located between the base component and the clamp component, The intermediate layer includes: The joint is formed by brazing in a partial area in order to connect the base member and the clamp member. The joint is formed by: After a portion of the bottom surface of the clamp component is metallized, a metal filler is provided between the metallized area and the base component as a medium to fix the clamp component and the base component. The joint comprises: a first ring-shaped region corresponding to edge regions of the base member and the clamp member and forming a closed space cut off from the outside in a central region of the intermediate layer; and The second area corresponds to a peripheral area surrounding the plurality of holes penetrating the base member and the clamp member and is located in the closed space.

11. The substrate processing apparatus according to claim 10, wherein: The intermediate layer further comprises: The heat transfer portion includes an inner space formed by the joint portion.

12. The substrate processing apparatus according to claim 11, wherein: The base member is formed with a gas injection portion for injecting a heat transfer gas into the heat transfer portion.

13. The substrate processing apparatus according to claim 12, wherein: The substrate supporting unit further comprises: A controller is used to control the pressure of the heat transfer gas injected into the heat transfer part through the gas injection part.

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