Microwave plasma testing apparatus, system and method

Abstract

The application discloses a microwave plasma testing device, system and method. The microwave plasma testing device comprises an electrostatic probe, a probe current voltage measurement module and a control module which are connected in sequence, and a scanning power generation module is further connected between the electrostatic probe and the control module; the control module generates a test signal, and the scanning power generation module generates a scanning voltage according to the test signal to drive the electrostatic probe to work; the electrostatic probe collects current voltage signals of a microwave plasma to be tested under the scanning voltage when working; the probe current voltage measurement module processes the current voltage signals to obtain processed current voltage signals; and the control module calculates the processed current voltage signals to obtain test parameters of the microwave plasma to be tested. The current voltage signals are collected through the electrostatic probe, the microwave plasma can be tested quickly and accurately, and the accuracy and effect of the test are improved.

Description

Technical Field

[0001] This invention relates to the field of plasma testing technology, and in particular to a microwave plasma testing device, system, and method. Background Technology

[0002] Plasma is currently widely used in industry and has become an important process. Microwave plasma is a type of plasma generated by converting microwave energy into the internal energy of gas molecules, thereby exciting and ionizing them. Due to its high activity and wide range of applications, microwave plasma can be used to manufacture various new materials with excellent properties. However, due to the transport characteristics, wave characteristics, instability, and radiation characteristics of plasma, it is necessary to test microwave plasma in order to understand its internal conditions in a timely manner.

[0003] Existing microwave plasma testing uses spectroscopy, but there are many interferences during spectral measurements, resulting in inaccurate results. Summary of the Invention

[0004] The main objective of this invention is to provide a microwave plasma testing device, system, and method, which aims to solve the technical problem that the existing technology is not accurate enough in microwave plasma testing.

[0005] To achieve the above objectives, the present invention provides a microwave plasma testing device, which includes: an electrostatic probe, a probe current and voltage measurement module, and a control module connected in sequence. The electrostatic probe is also connected to the microwave plasma to be tested, and a scanning power generation module is connected between the electrostatic probe and the control module.

[0006] The control module is used to generate a test signal and transmit the test signal to the scanning power generation module;

[0007] The scanning power generation module is used to generate a scanning voltage according to the test signal, drive the electrostatic probe to work according to the scanning voltage, and transmit the scanning voltage to the microwave plasma to be tested.

[0008] The electrostatic probe is used to collect the current and voltage signals of the microwave plasma under test under the scanning voltage during operation, and to transmit the current and voltage signals to the probe current and voltage measurement module.

[0009] The probe current and voltage measurement module is used to process the current and voltage signal to obtain the processed current and voltage signal, and transmit the processed current and voltage signal to the control module.

[0010] The control module is also used to calculate the processed current and voltage signals to obtain the test parameters of the microwave plasma to be tested.

[0011] Optionally, the scanning power generation module includes: a linear optocoupler, an adjustment circuit, and a power amplifier;

[0012] The first end of the linear optocoupler is connected to the control module, the second end of the linear optocoupler is connected to the first end of the adjustment circuit, the second end of the adjustment circuit is connected to the input end of the power amplifier, and the output end of the power amplifier is connected to the electrostatic probe.

[0013] The adjustment circuit is used to filter the test signal and convert its voltage polarity to obtain a converted voltage.

[0014] The power amplifier is used to amplify the converted voltage to obtain a scanning voltage.

[0015] Optionally, the adjustment circuit includes: a first resistor, a second resistor, a third resistor, a first capacitor, a second capacitor, and a first operational amplifier;

[0016] The first end of the first resistor is connected to the output end of the linear optocoupler, and the second end of the first resistor is connected to the first end of the second resistor, the first end of the first capacitor, and the first end of the second capacitor, respectively.

[0017] The second terminal of the second resistor is grounded, and the second terminal of the first capacitor is connected to the first terminal of the third resistor and the output terminal of the first operational amplifier, respectively.

[0018] The second terminal of the second capacitor is connected to the second terminal of the third resistor and the positive input terminal of the first operational amplifier, respectively. The inverting input terminal of the first operational amplifier is grounded, and the output terminal of the first operational amplifier is connected to the input terminal of the power amplifier.

[0019] Optionally, the probe current and voltage measurement module includes: a sampling circuit, a signal conditioning circuit, and an opto-isolation circuit connected in sequence;

[0020] The sampling circuit is used to receive the current-voltage signal and process the current-voltage signal to obtain a reference current-voltage signal.

[0021] The signal conditioning circuit is used to convert the reference current-voltage signal to obtain a converted current-voltage signal;

[0022] The opto-isolation circuit is used to isolate the converted current-voltage signal to obtain the processed current-voltage signal.

[0023] Optionally, the sampling circuit includes a sampling resistor, a fourth resistor, and a fifth resistor; the signal conditioning circuit includes a first signal conditioning circuit and a second signal conditioning circuit; and the opto-isolation circuit includes a first opto-isolation circuit and a second opto-isolation circuit.

[0024] The first end of the sampling resistor is connected to the electrostatic probe and the first signal conditioning circuit, the second end of the sampling resistor is connected to the first signal conditioning circuit, and the first signal conditioning circuit is also connected to the first opto-isolation circuit.

[0025] The first end of the fourth resistor is connected to the electrostatic probe, the second end of the fourth resistor is connected to the second signal conditioning circuit and the first end of the fifth resistor respectively, the second end of the fifth resistor is grounded, and the second signal conditioning circuit is also connected to the second opto-isolation circuit.

[0026] Optionally, the control module includes a microcontroller and a host computer, wherein the host computer and the microcontroller are connected via an RS232 serial port;

[0027] The host computer is used to communicate with the microcontroller through the RS232 serial port and send test commands to the microcontroller;

[0028] The host computer is also used to set the scanning mode and send the scanning mode to the microcontroller;

[0029] The microcontroller is used to generate a test signal according to the test command and transmit the test signal to the scanning power generation module;

[0030] The microcontroller is also used to control and switch the detection mode of the electrostatic probe according to the scanning mode.

[0031] Optionally, the microwave plasma testing device further includes: an isolation transformer module, which is connected to the electrostatic probe, the probe current and voltage measurement module, and the scanning power supply generation module, respectively;

[0032] The isolation transformer module is used to receive the scanning voltage transmitted by the scanning power generation module and the current and voltage signals transmitted by the electrostatic probe, and to isolate and transform the scanning voltage and the current and voltage signals.

[0033] Optionally, the electrostatic probe is made of tungsten wire, the shield of the electrostatic probe is made of alumina ceramic sleeve, and the support part of the electrostatic probe is made of stainless steel tube.

[0034] In addition, to achieve the above objectives, the present invention also provides a microwave plasma testing system, which includes a microwave plasma to be tested and a microwave plasma testing device as shown above.

[0035] Furthermore, to achieve the above objectives, the present invention also provides a microwave plasma testing method. This method utilizes the microwave plasma testing apparatus described above. The microwave plasma testing apparatus includes: an electrostatic probe, a probe current and voltage measurement module, and a control module connected in sequence. The electrostatic probe is also connected to the microwave plasma to be tested. A scanning power supply generation module is also connected between the electrostatic probe and the control module. The method includes the following steps:

[0036] The control module generates a test signal and transmits the test signal to the scanning power generation module;

[0037] The scanning power generation module generates a scanning voltage based on the test signal, drives the electrostatic probe to work based on the scanning voltage, and transmits the scanning voltage to the microwave plasma to be tested.

[0038] When the electrostatic probe is working, it collects the current and voltage signals of the microwave plasma under the scanning voltage and transmits the current and voltage signals to the probe current and voltage measurement module.

[0039] The probe current and voltage measurement module processes the current and voltage signal to obtain the processed current and voltage signal, and then transmits the processed current and voltage signal to the control module.

[0040] The control module calculates the processed current and voltage signals to obtain the test parameters of the microwave plasma to be tested.

[0041] This invention comprises an electrostatic probe, a probe current-voltage measurement module, and a control module connected sequentially in a microwave plasma testing device. The electrostatic probe is also connected to the microwave plasma under test, and a scanning power generation module is connected between the electrostatic probe and the control module. The control module generates a test signal and transmits it to the scanning power generation module. The scanning power generation module generates a scanning voltage based on the test signal, drives the electrostatic probe to operate based on the scanning voltage, and transmits the scanning voltage to the microwave plasma under test. The electrostatic probe collects the current-voltage signal of the microwave plasma under test under the scanning voltage during operation and transmits the current-voltage signal to the probe current-voltage measurement module. The probe current-voltage measurement module processes the current-voltage signal to obtain a processed current-voltage signal and transmits the processed current-voltage signal to the control module. The control module also calculates the test parameters of the microwave plasma under test based on the processed current-voltage signal. By collecting the current-voltage signal through the electrostatic probe, microwave plasma can be tested quickly and accurately, improving the accuracy and effectiveness of the test. Attached Figure Description

[0042] Figure 1 This is a schematic diagram of the structure of the first embodiment of the microwave plasma testing device of the present invention;

[0043] Figure 2 This is a schematic diagram of the circuit structure of the second embodiment of the microwave plasma testing device of the present invention;

[0044] Figure 3 This is a schematic diagram of the circuit structure of the third embodiment of the microwave plasma testing device of the present invention;

[0045] Figure 4 This is a schematic flowchart of the first embodiment of the microwave plasma testing method of the present invention.

[0046] Explanation of icon numbers:

[0047]

[0048] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0049] It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of the invention.

[0050] Reference Figure 1 , Figure 1 This is a schematic diagram of the structure of the first embodiment of the microwave plasma testing device of the present invention.

[0051] In this embodiment, the microwave plasma testing device 1 includes: an electrostatic probe 10, a probe current and voltage measurement module 20, and a control module 30 connected in sequence. The electrostatic probe 10 is also connected to the microwave plasma 2 to be tested, and a scanning power generation module 40 is connected between the electrostatic probe 10 and the control module 30.

[0052] It should be noted that the electrostatic probe 10 can be inserted into the microwave plasma 2 to be tested, thereby detecting the test parameters of the microwave plasma. The electrostatic probe 10 can be a single probe or a double probe, which can be selected according to requirements. The contact detection method of inserting the electrostatic probe 10 into the microwave plasma 2 to be tested can effectively improve the detection effect.

[0053] In specific implementation, the material of the electrostatic probe 10 includes tungsten wire, the shield of the electrostatic probe 10 is made of alumina ceramic sleeve, and the support part of the electrostatic probe 10 includes stainless steel tube.

[0054] It should be understood that the electrostatic probe 10 can be used to quickly scan the microwave plasma 2 under test, thereby acquiring the test parameters of the microwave plasma 2 under test, greatly improving work efficiency, and significantly reducing errors. Since the test parameters of the microwave plasma 2 under test have a gradient, the size of the electrostatic probe 10 is much smaller than the size of the microwave plasma 2 under test. The material of the electrostatic probe 10 can be tungsten wire, which has a high specific heat and thermal conductivity, and a high melting point; other metal materials, such as aluminum and platinum, can also be used. This embodiment does not impose any limitations on this. The shielding body of the electrostatic probe 10 uses an alumina ceramic sleeve to shield the probe. The supporting part of the electrostatic probe 10 uses a stainless steel tube to ensure that the effective area of ​​the electrostatic probe 10 remains unchanged. To minimize the impact of the electrostatic probe 10 on the microwave plasma 2 under test, the stainless steel tube should be made long and thin, and after vacuum sealing, the stainless steel tube should be led out as a connector for detection by the electrostatic probe 10.

[0055] In this embodiment, the control module 30 is used to generate a test signal and transmit the test signal to the scanning power generation module 40; the scanning power generation module 40 is used to generate a scanning voltage according to the test signal, drive the electrostatic probe 10 to work according to the scanning voltage, and transmit the scanning voltage to the microwave plasma 2 to be tested.

[0056] It should be understood that when the control module 30 tests the microwave plasma 2 under test, it generates a test signal and transmits the generated test signal to the scanning power generation module 40 connected to it. When the scanning power generation module 40 receives the test signal, it can generate a scanning voltage according to the test signal. The scanning voltage can be 50V, 80V, etc. This embodiment does not limit this and can be set according to the type of microwave plasma 2 under test. After the scanning power generation module 40 generates the scanning voltage, it drives the electrostatic probe 10 to work, samples the microwave plasma 2 under test, and transmits the scanning voltage to the microwave plasma 2 under test through the electrostatic probe 10.

[0057] In a specific implementation, the control module 30 includes a microcontroller and a host computer, which are connected via an RS232 serial port. The host computer is used to communicate with the microcontroller via the RS232 serial port and send test commands to the microcontroller. The host computer is also used to set a scanning mode and send the scanning mode to the microcontroller. The microcontroller is used to generate a test signal according to the test command and transmit the test signal to the scanning power generation module 40. The microcontroller is also used to control the switching of the detection mode of the electrostatic probe 10 according to the scanning mode.

[0058] It should be noted that the microcontroller in the control module 30 communicates with the host computer via an RS232 serial port. When testing the microwave plasma 2 to be tested is required, the host computer in the control module 30 generates a test command and sends it to the microcontroller via the RS232 serial port. Upon receiving the test command, the microcontroller confirms successful communication with the host computer and initiates the generation of a test signal, which is then transmitted to the scanning power supply generation module 40 to generate a scanning voltage. The host computer can also control the detection type of the electrostatic probe 10, such as single-probe detection or dual-probe detection. Therefore, the host computer can set the scanning mode according to user requirements and send the scanning mode to the microcontroller via the RS232 serial port. After receiving the scanning mode, the microcontroller controls the switching of the electrostatic probe 10's detection mode according to the scanning mode.

[0059] In this embodiment, the electrostatic probe 10 is used to collect the current and voltage signals of the microwave plasma 2 under the scanning voltage during operation, and transmit the current and voltage signals to the probe current and voltage measurement module 20; the probe current and voltage measurement module 20 is used to process the current and voltage signals to obtain processed current and voltage signals, and transmit the processed current and voltage signals to the control module 30; the control module 30 is also used to calculate the processed current and voltage signals to obtain the test parameters of the microwave plasma 2 under test.

[0060] It should be noted that when the electrostatic probe 10 starts working, it can collect the current and voltage signals of the microwave plasma 2 under the scanning voltage and transmit the collected current and voltage signals to the probe current and voltage measurement module 20. After receiving the current and voltage signals, the probe current and voltage measurement module 20 processes the current and voltage signals to obtain the processed current and voltage signals. The probe current and voltage measurement module 20 may include an amplification module, a conversion module, an isolation module, etc. The current and voltage signals are processed by the amplification module, the conversion module, and the isolation module respectively to obtain the processed current and voltage signals.

[0061] In specific implementation, the probe current and voltage measurement module 20 transmits the processed current and voltage signals to the control module 30. The control module 30 can calculate the processed current and voltage signals to obtain the target current and target voltage, and establish a linear relationship between the target current and target voltage to obtain test parameters such as the electron temperature of the microwave plasma 2 to be tested.

[0062] This embodiment uses a microwave plasma testing device with an electrostatic probe, a probe current-voltage measurement module, and a control module connected in sequence. The electrostatic probe is also connected to the microwave plasma to be tested, and a scanning power supply generation module is connected between the electrostatic probe and the control module. The control module generates a test signal and transmits it to the scanning power supply generation module. The scanning power supply generation module generates a scanning voltage based on the test signal, drives the electrostatic probe to operate based on the scanning voltage, and transmits the scanning voltage to the microwave plasma to be tested. The electrostatic probe collects the current-voltage signal of the microwave plasma to be tested under the scanning voltage during operation and transmits the current-voltage signal to the probe current-voltage measurement module. The probe current-voltage measurement module processes the current-voltage signal to obtain a processed current-voltage signal and transmits the processed current-voltage signal to the control module. The control module also calculates the test parameters of the microwave plasma to be tested based on the processed current-voltage signal. By collecting the current-voltage signal through the electrostatic probe, the microwave plasma can be tested quickly and accurately, improving the accuracy and effectiveness of the test.

[0063] refer to Figure 2 , Figure 2 This is a schematic diagram of the circuit structure of the second embodiment of the microwave plasma testing device of the present invention.

[0064] Based on the first embodiment described above, the scanning power generation module 40 includes: a linear optocoupler 401, an adjustment circuit 402, and a power amplifier 403; the first end of the linear optocoupler 401 is connected to the control module 30, the second end of the linear optocoupler 401 is connected to the first end of the adjustment circuit 402, the second end of the adjustment circuit 402 is connected to the input end of the power amplifier 403, and the output end of the power amplifier 403 is connected to the electrostatic probe 10; the adjustment circuit 402 is used to filter the test signal and perform voltage polarity conversion to obtain a converted voltage;

[0065] In specific implementation, the first terminal of the linear optocoupler 401 is the input terminal, through which it receives the test signal transmitted by the control module 30. The test signal is a sawtooth wave signal. The linear optocoupler 401 isolates the test signal, protecting the circuit in the scanning voltage generation module 40 and reducing the impact of environmental interference on the circuit. The second terminal of the linear optocoupler 401 is the output terminal, through which it outputs the isolated signal to the adjustment circuit 402. The adjustment circuit 402 is used to filter and reverse the polarity of the sawtooth wave signal to obtain the converted voltage. The input terminals of the power amplifier 403 include a non-inverting input terminal and an inverting input terminal. The non-inverting input terminal of the power amplifier 403 is connected to the output terminal of the adjustment circuit 402, and the inverting input terminal of the power amplifier 403 can be grounded after connecting a resistor.

[0066] The power amplifier 403 is used to amplify the conversion voltage to obtain a scanning voltage.

[0067] In a specific implementation, the power amplifier receives the conversion voltage transmitted by the adjustment circuit 402 and amplifies the conversion voltage to obtain the scanning voltage.

[0068] In this embodiment, the adjustment circuit 402 includes: a first resistor R1, a second resistor R2, a third resistor R3, a first capacitor C1, a second capacitor C2, and a first operational amplifier D1; the first end of the first resistor R1 is connected to the output terminal of the linear optocoupler 401, and the second end of the first resistor R1 is connected to the first ends of the second resistor R2, the first ends of the first capacitor C1, and the first ends of the second capacitor C2, respectively; the second end of the second resistor R2 is grounded, and the second end of the first capacitor C1 is connected to the first end of the third resistor R3 and the output terminal of the first operational amplifier D1, respectively; the second end of the second capacitor C2 is connected to the second end of the third resistor R3 and the positive input terminal of the first operational amplifier D1, the inverting input terminal of the first operational amplifier D1 is grounded, and the output terminal of the first operational amplifier D1 is connected to the input terminal of the power amplifier 403.

[0069] Understandably, the test signal is filtered by the first capacitor C1 and the second capacitor C2 to smooth the waveform. The first operational amplifier D1 is a buffer amplifier, which converts the unipolar voltage output into a bipolar voltage output, thus obtaining the converted voltage.

[0070] This embodiment incorporates a linear optocoupler, an adjustment circuit, and a power amplifier within the scanning power generation module. The first end of the linear optocoupler is connected to the control module, the second end of the linear optocoupler is connected to the first end of the adjustment circuit, the second end of the adjustment circuit is connected to the input end of the power amplifier, and the output end of the power amplifier is connected to the electrostatic probe. The adjustment circuit filters and converts the voltage polarity of the test signal to obtain a converted voltage. The power amplifier amplifies the converted voltage to obtain a scanning voltage. By filtering, converting, and amplifying the test signal, a more accurate scanning voltage is obtained, facilitating accurate testing of microwave plasma.

[0071] refer to Figure 3 , Figure 3 This is a schematic diagram of the circuit structure of the third embodiment of the microwave plasma testing device of the present invention.

[0072] Based on the first embodiment described above, the probe current and voltage measurement module 20 of this embodiment includes: a sampling circuit 201, a signal conditioning circuit 202, and an opto-isolation circuit 203 connected in sequence; the sampling circuit 201 is used to receive the current and voltage signal and process the current and voltage signal to obtain a reference current and voltage signal.

[0073] It should be noted that the sampling circuit may include a sampling resistor RC1, which samples the current and voltage signals of the electrostatic probe 10 and processes the current and voltage signals to obtain a reference current and voltage signal.

[0074] In this embodiment, the signal conditioning circuit 202 is used to convert the reference current-voltage signal to obtain a converted current-voltage signal; the opto-isolation circuit 203 is used to isolate the converted current-voltage signal to obtain a processed current-voltage signal.

[0075] It should be understood that the signal conditioning circuit 202 can perform signal conversion on the reference current and voltage signal, converting and attenuating the reference current and voltage signal to obtain the converted current and voltage signal.

[0076] Specifically, the sampling circuit 201 includes a sampling resistor RC1, a fourth resistor R4, and a fifth resistor R5; the signal conditioning circuit 202 includes a first signal conditioning circuit A1 and a second signal conditioning circuit A2; and the opto-isolation circuit 203 includes a first opto-isolation circuit B1 and a second opto-isolation circuit B2. The first end of the sampling resistor RC1 is connected to the electrostatic probe 10 and the first signal conditioning circuit A1, and the second end of the sampling resistor RC1 is connected to the first signal conditioning circuit A1. The first signal conditioning circuit A1 is also connected to the first opto-isolation circuit B1. The first end of the fourth resistor R4 is connected to the electrostatic probe 10, and the second end of the fourth resistor R4 is connected to the second signal conditioning circuit A2 and the first end of the fifth resistor R5. The second end of the fifth resistor R5 is grounded, and the second signal conditioning circuit A2 is also connected to the second opto-isolation circuit B2.

[0077] In specific implementation, the sampling resistor RC1 can collect the voltage of the electrostatic probe 10, thereby directly obtaining the voltage drop across the sampling resistor RC1 and obtaining the current value. The signal is taken out from the sampling resistor RC1 and transmitted to the microcontroller after passing through the first signal conditioning circuit A1, the second signal conditioning circuit A2, the first opto-isolation circuit B1, and the second opto-isolation circuit B2. The differential input method effectively suppresses noise and also protects the circuit.

[0078] In this embodiment, the microwave plasma testing device 1 further includes an isolation transformer module 50, which is connected to the electrostatic probe 10, the probe current and voltage measurement module 20, and the scanning power generation module 40, respectively. The isolation transformer module 50 is used to receive the scanning voltage transmitted by the scanning power generation module 40 and the current and voltage signals transmitted by the electrostatic probe 10, and to isolate and transform the scanning voltage and the current and voltage signals.

[0079] It should be noted that the isolation transformer module 50 is used to isolate and transform the scanning voltage and current voltage, thereby isolating the output of the scanning voltage and current voltage.

[0080] This embodiment incorporates a sampling circuit, a signal conditioning circuit, and an opto-isolation circuit sequentially connected within the probe current-voltage measurement module. The sampling circuit receives the current-voltage signal and processes it to obtain a reference current-voltage signal. The signal conditioning circuit converts the reference current-voltage signal to obtain a converted current-voltage signal. The opto-isolation circuit isolates the converted current-voltage signal to obtain a processed current-voltage signal. By opto-isolating the current-voltage signal, circuit noise is suppressed and circuit safety is protected.

[0081] This invention provides a microwave plasma testing method, referring to... Figure 4 , Figure 4 This is a schematic flowchart of the first embodiment of the microwave plasma testing method of the present invention.

[0082] In this embodiment, the microwave plasma testing method uses the microwave plasma testing device described above. The microwave plasma testing device includes: an electrostatic probe, a probe current and voltage measurement module, and a control module connected in sequence. The electrostatic probe is also connected to the microwave plasma to be tested, and a scanning power generation module is connected between the electrostatic probe and the control module.

[0083] The method includes the following steps:

[0084] Step S10: The control module generates a test signal and transmits the test signal to the scanning power generation module.

[0085] When the microwave plasma under test is being tested, the control module generates a test signal and transmits the generated test signal to the scanning power generation module connected to it.

[0086] Step S20: The scanning power generation module generates a scanning voltage according to the test signal, drives the electrostatic probe to work according to the scanning voltage, and transmits the scanning voltage to the microwave plasma to be tested.

[0087] In a specific implementation, the control module includes a microcontroller and a host computer, which are connected via an RS232 serial port. The host computer is used to communicate with the microcontroller through the RS232 serial port and send test commands to the microcontroller. The host computer is also used to set a scanning mode and send the scanning mode to the microcontroller. The microcontroller is used to generate a test signal according to the test command and transmit the test signal to the scanning power generation module. The microcontroller is also used to control the switching of the electrostatic probe's detection mode according to the scanning mode.

[0088] The microcontroller in the control module communicates with the host computer via an RS232 serial port. When microwave plasma testing is required, the host computer generates a test command and sends it to the microcontroller via the RS232 serial port. Upon receiving the test command, the microcontroller confirms successful communication with the host computer and initiates the generation of a test signal. This signal is then transmitted to the scanning power supply module, enabling it to generate a scanning voltage. The host computer can also control the type of electrostatic probe detection, such as single-probe or dual-probe detection. Therefore, the host computer can set the scanning mode according to user requirements and send it to the microcontroller via the RS232 serial port. Upon receiving the scanning mode, the microcontroller switches the electrostatic probe detection mode accordingly.

[0089] When the scanning power generation module receives the test signal, it can generate a scanning voltage according to the test signal. The scanning voltage can be 50V, 80V, etc. This embodiment does not limit this and can be set according to the type of microwave plasma to be tested. After the scanning power generation module generates the scanning voltage, it drives the electrostatic probe to work, samples the microwave plasma to be tested, and transmits the scanning voltage to the microwave plasma to be tested through the electrostatic probe.

[0090] Step S30: When the electrostatic probe is working, it collects the current and voltage signals of the microwave plasma under the scanning voltage and transmits the current and voltage signals to the probe current and voltage measurement module.

[0091] It should be noted that when the electrostatic probe starts working, it can collect the current and voltage signals of the microwave plasma under test at the scanning voltage and transmit the collected current and voltage signals to the probe current and voltage measurement module. The electrostatic probe can quickly scan the microwave plasma under test, thereby acquiring the test parameters of the microwave plasma under test, greatly improving work efficiency and significantly reducing errors.

[0092] Step S40: The probe current and voltage measurement module processes the current and voltage signal to obtain the processed current and voltage signal, and transmits the processed current and voltage signal to the control module.

[0093] After receiving the current and voltage signal, the probe current and voltage measurement module processes the signal to obtain a processed current and voltage signal. The probe current and voltage measurement module may include an amplification module, a conversion module, and an isolation module, which process the current and voltage signal respectively to obtain the processed current and voltage signal.

[0094] Step S50: The control module calculates the processed current and voltage signals to obtain the test parameters of the microwave plasma to be tested.

[0095] In practice, the probe current and voltage measurement module transmits the processed current and voltage signals to the control module. The control module can calculate the processed current and voltage signals to obtain the target current and target voltage. By establishing a linear relationship between the target current and target voltage, the test parameters such as the electron temperature of the microwave plasma to be tested can be obtained.

[0096] This embodiment uses a microwave plasma testing device with an electrostatic probe, a probe current-voltage measurement module, and a control module connected in sequence. The electrostatic probe is also connected to the microwave plasma to be tested, and a scanning power supply generation module is connected between the electrostatic probe and the control module. The control module generates a test signal and transmits it to the scanning power supply generation module. The scanning power supply generation module generates a scanning voltage based on the test signal, drives the electrostatic probe to operate based on the scanning voltage, and transmits the scanning voltage to the microwave plasma to be tested. The electrostatic probe collects the current-voltage signal of the microwave plasma to be tested under the scanning voltage during operation and transmits the current-voltage signal to the probe current-voltage measurement module. The probe current-voltage measurement module processes the current-voltage signal to obtain a processed current-voltage signal and transmits the processed current-voltage signal to the control module. The control module also calculates the test parameters of the microwave plasma to be tested based on the processed current-voltage signal. By collecting the current-voltage signal through the electrostatic probe, the microwave plasma can be tested quickly and accurately, improving the accuracy and effectiveness of the test.

[0097] Furthermore, to achieve the above objectives, the present invention also proposes a microwave plasma testing system, which includes a microwave plasma to be tested and a microwave plasma testing device as described above.

[0098] Since this microwave plasma testing system adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be repeated here.

[0099] It should be understood that the above are merely illustrative examples and do not constitute any limitation on the technical solutions of the present invention. In specific applications, those skilled in the art can make settings as needed, and the present invention does not impose any restrictions on this.

[0100] It should be noted that the workflow described above is merely illustrative and does not limit the scope of protection of this invention. In practical applications, those skilled in the art can select some or all of the workflow to achieve the purpose of this embodiment according to actual needs, and no restrictions are imposed here.

[0101] In addition, for technical details not described in detail in this embodiment, please refer to the microwave plasma testing method provided in any embodiment of the present invention, which will not be repeated here.

[0102] Furthermore, it should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or system. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or system that includes that element.

[0103] The sequence numbers of the above embodiments of the present invention are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0104] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as read-only memory (ROM) / RAM, magnetic disk, optical disk) and includes several instructions to cause a terminal device (which may be a mobile phone, computer, server, or network device, etc.) to execute the methods described in the various embodiments of the present invention.

[0105] The above are merely preferred embodiments of the present invention and do not limit the scope of the patent. Any equivalent structural or procedural transformations made based on the description and drawings of the present invention, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of the present invention.

Claims

1. A microwave plasma testing device, characterized by, The microwave plasma testing device comprises: an electrostatic probe, a probe current-voltage measurement module and a control module connected in sequence, the electrostatic probe is further connected with a microwave plasma to be tested, and a scanning power generation module is further connected between the electrostatic probe and the control module; The control module is configured to generate a test signal and transmit the test signal to the scanning power generation module; The scanning power generation module is configured to generate a scanning voltage according to the test signal, drive the electrostatic probe to work according to the scanning voltage, and transmit the scanning voltage to the microwave plasma to be tested; The electrostatic probe is configured to collect a current-voltage signal of the microwave plasma to be tested under the scanning voltage when working, and transmit the current-voltage signal to the probe current-voltage measurement module; The probe current-voltage measurement module is configured to process the current-voltage signal to obtain a processed current-voltage signal, and transmit the processed current-voltage signal to the control module; The control module is further configured to calculate the processed current-voltage signal to obtain a test parameter of the microwave plasma to be tested; The probe current-voltage measurement module comprises: a sampling circuit, a signal conditioning circuit and an opto-isolating circuit connected in sequence; The sampling circuit is configured to receive the current-voltage signal and process the current-voltage signal to obtain a reference current-voltage signal; The signal conditioning circuit is configured to perform signal conversion on the reference current-voltage signal to obtain a converted current-voltage signal; The opto-isolating circuit is configured to isolate the converted current-voltage signal to obtain the processed current-voltage signal; The sampling circuit comprises a sampling resistor, a fourth resistor and a fifth resistor, the signal conditioning circuit comprises a first signal conditioning circuit and a second signal conditioning circuit, and the opto-isolating circuit comprises a first opto-isolating circuit and a second opto-isolating circuit; A first end of the sampling resistor is connected with the electrostatic probe and the first signal conditioning circuit respectively, a second end of the sampling resistor is connected with the first signal conditioning circuit, and the first signal conditioning circuit is further connected with the first opto-isolating circuit; A first end of the fourth resistor is connected with the electrostatic probe, a second end of the fourth resistor is connected with the second signal conditioning circuit and a first end of the fifth resistor respectively, a second end of the fifth resistor is grounded, and the second signal conditioning circuit is further connected with the second opto-isolating circuit.

2. The microwave plasma test device of claim 1, wherein, The scanning power generation module comprises: a linear optocoupler, an adjusting circuit and a power amplifier; A first end of the linear optocoupler is connected with the control module, a second end of the linear optocoupler is connected with a first end of the adjusting circuit, a second end of the adjusting circuit is connected with an input end of the power amplifier, and an output end of the power amplifier is connected with the electrostatic probe; The adjusting circuit is configured to filter and perform voltage polarity conversion on the test signal to obtain a converted voltage; The power amplifier is configured to perform voltage amplification on the converted voltage to obtain a scanning voltage.

3. The microwave plasma test device of claim 2, wherein, The adjustment circuit comprises a first resistor, a second resistor, a third resistor, a first capacitor, a second capacitor and a first operational amplifier; a first end of the first resistor is connected with an output end of the linear photoelectric coupler, and a second end of the first resistor is connected with a first end of the second resistor, a first end of the first capacitor and a first end of the second capacitor respectively; a second end of the second resistor is grounded, and a second end of the first capacitor is connected with a first end of the third resistor and an output end of the first operational amplifier respectively; a second end of the second capacitor is connected with a second end of the third resistor and a positive input end of the first operational amplifier respectively, a negative input end of the first operational amplifier is grounded, and the output end of the first operational amplifier is connected with an input end of the power amplifier.

4. The microwave plasma test device of claim 1, wherein, The control module comprises a single-chip microcomputer and an upper computer, and the upper computer and the single-chip microcomputer are connected through an RS232 serial port; the upper computer is configured to communicate with the single-chip microcomputer through the RS232 serial port and send a test instruction to the single-chip microcomputer; the upper computer is further configured to set a scanning mode and send the scanning mode to the single-chip microcomputer; the single-chip microcomputer is configured to generate a test signal according to the test instruction and transmit the test signal to the scanning power generation module; the single-chip microcomputer is further configured to control the detection mode of the electrostatic probe according to the scanning mode.

5. The microwave plasma test device of claim 1, wherein, The microwave plasma test device further comprises an isolation transformer module, which is connected with the electrostatic probe, the probe current and voltage measurement module and the scanning power generation module respectively; the isolation transformer module is configured to receive a scanning voltage transmitted by the scanning power generation module and a current and voltage signal transmitted by the electrostatic probe, and perform isolation transformation on the scanning voltage and the current and voltage signal.

6. The microwave plasma test device of any one of claims 1 to 5, wherein, The material of the electrostatic probe comprises tungsten wire, the shielding body of the electrostatic probe adopts an alumina ceramic sleeve, and the support part of the electrostatic probe comprises a stainless steel tube.

7. A microwave plasma test system characterized by, The microwave plasma test system comprises a microwave plasma to be tested and the microwave plasma test device according to any one of claims 1 to 6.

8. A microwave plasma testing method, characterized by, The microwave plasma test method applies the microwave plasma test device according to any one of claims 1 to 6, the microwave plasma test device comprises an electrostatic probe, a probe current and voltage measurement module and a control module connected in sequence, the electrostatic probe is further connected with a microwave plasma to be tested, and a scanning power generation module is further connected between the electrostatic probe and the control module, and the method comprises: the control module generates a test signal and transmits the test signal to the scanning power generation module; the scanning power generation module generates a scanning voltage according to the test signal, drives the electrostatic probe to work according to the scanning voltage and transmits the scanning voltage to the microwave plasma to be tested; The electrostatic probe collects a current-voltage signal of the microwave plasma to be tested under the scanning voltage during work and transmits the current-voltage signal to the probe current-voltage measurement module; The probe current-voltage measurement module processes the current-voltage signal to obtain a processed current-voltage signal and transmits the processed current-voltage signal to the control module; The control module calculates the processed current-voltage signal to obtain a test parameter of the microwave plasma to be tested; The probe current-voltage measurement module comprises a sampling circuit, a signal conditioning circuit and an opto-isolating circuit connected in sequence; The sampling circuit receives the current-voltage signal and processes the current-voltage signal to obtain a reference current-voltage signal; The signal conditioning circuit performs signal conversion on the reference current-voltage signal to obtain a converted current-voltage signal; The opto-isolating circuit isolates the converted current-voltage signal to obtain the processed current-voltage signal; The sampling circuit comprises a sampling resistor, a fourth resistor and a fifth resistor, the signal conditioning circuit comprises a first signal conditioning circuit and a second signal conditioning circuit, and the opto-isolating circuit comprises a first opto-isolating circuit and a second opto-isolating circuit; A first end of the sampling resistor is connected with the electrostatic probe and the first signal conditioning circuit respectively, a second end of the sampling resistor is connected with the first signal conditioning circuit, and the first signal conditioning circuit is further connected with the first opto-isolating circuit; A first end of the fourth resistor is connected with the electrostatic probe, a second end of the fourth resistor is connected with the second signal conditioning circuit and a first end of the fifth resistor respectively, a second end of the fifth resistor is grounded, and the second signal conditioning circuit is further connected with the second opto-isolating circuit.

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