Radio frequency power amplifier

Abstract

The application provides a radio frequency power amplifier, which comprises a signal input end, a driving amplifier realized by a CMOS process, a power amplifier realized by a GaAs HBT process, a power combining network and a signal output end which are electrically connected in sequence and integrated on the same substrate; the driving amplifier is electrically connected in sequence by a first-stage amplifier, an inter-stage balun network, a second-stage amplifier and a second-stage output transformer network; the input end of the first-stage amplifier is connected to the signal input end, and the output end of the inter-stage balun network is connected to the input end of the second-stage amplifier; the radio frequency power amplifier is used for converting a single-ended signal amplified by the first-stage amplifier into a differential signal and outputting a first differential signal and a second differential signal. The radio frequency power amplifier has small insertion loss, high output power, improved efficiency and linearity.

Description

Technical Field

[0001] This invention relates to the field of wireless communication technology, and more particularly to a radio frequency power amplifier. Background Technology

[0002] Currently, modern wireless communication employs Orthogonal Frequency Division Multiplexing (OFDM) technology to improve data transmission rates and spectral efficiency. OFDM signals are synthesized through multi-carrier modulation, resulting in a high peak-to-average power ratio (PAPR). A high PAPR necessitates high linearity in the wireless communication power amplifier to ensure distortion-free transmission. 4G LTE systems have already imposed stringent requirements on the power output, selectivity, and power consumption of the RF front-end. 5G modulation schemes add further demands. Compared to 4G LTE, 5G NR operates at higher frequencies, resulting in more complex modulation methods and an even higher PAPR, placing even greater demands on the linearity of the RF power amplifier. The output power of the 5G antenna is double that of 4G. Considering the switching, diplexer, and wiring insertion losses at the RF module's backend, the actual output power of the RF power amplifier will be approximately four times that of 4G. The increased output power required by 5G terminals and the significant increase in PAPR lead to a substantial increase in the current consumed by the RF power amplifier, exacerbating the thermal effects of transistors.

[0003] Currently, the commonly used integrated circuit processes for mobile RF power amplifiers are CMOS and GaAs HBT processes. Low cost is the biggest advantage of CMOS processes, as CMOS wafers are the cheapest. However, most CMOS processes are optimized for high-density digital circuit designs and are not well-suited for RF power amplifier designs that handle large signals. GaAs HBT processes, based on semi-insulating GaAs substrates, offer high power density, high transconductance, high breakdown voltage, good linearity, low signal interference, and low insertion loss of passive components, making them ideal for RF power amplifier design. Compared to GaAs HBT devices, CMOS devices have lower breakdown voltage, poorer linearity, and higher losses due to their semi-insulating substrates, making the design of high-power CMOS RF power amplifiers very difficult. However, GaAs wafers are more expensive than CMOS wafers. Maximizing the use of CMOS processes in circuit design, and even achieving fully integrated circuits encompassing baseband, memory, and RF, has always been a goal pursued by designers.

[0004] Due to the physical limitations of CMOS devices, the output power of a single CMOS amplifier is low. To improve output power, it is necessary to power combine the output power of multiple CMOS amplifiers. A common power combining method in CMOS RF power amplifier design is to use a magnetically coupled transformer power combining network to combine the power of multiple differential output signals. However, because the substrate in CMOS technology is semi-insulated, the insertion loss of the magnetically coupled transformer power combining network increases with the operating frequency, reducing the output power and efficiency of the CMOS power amplifier. Furthermore, the linearity of CMOS RF power amplifiers is also worse than that of GaAs HBT power amplifiers.

[0005] However, the output power of a single CMOS amplifier is low. To improve the output power, it is necessary to power combine the output power of multiple CMOS amplifiers. Traditional CMOS RF power amplifiers use a magnetically coupled transformer power combining network to combine the power of multiple differential output signals. Because the substrate of CMOS technology is semi-insulated, the insertion loss of the magnetically coupled transformer power combining network increases with the operating frequency, reducing the output power and efficiency of the CMOS power amplifier. In addition, the linearity of CMOS RF power amplifiers is also worse than that of GaAs HBT power amplifiers. Summary of the Invention

[0006] To address the shortcomings of the existing technologies, this invention proposes a radio frequency power amplifier to solve the problems of high insertion loss, low output power and efficiency, and poor linearity in existing radio frequency power amplifiers.

[0007] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0008] This invention provides a radio frequency (RF) power amplifier, which includes a signal input terminal, a driver amplifier implemented using CMOS technology, a power amplifier implemented using GaAs HBT technology, a power combining network, and a signal output terminal, all electrically connected in sequence and integrated on the same substrate. The driver amplifier is further divided into a first-stage amplifier, an inter-stage balun network, a second-stage amplifier, and a second-stage output transformer network, all electrically connected in sequence.

[0009] The input terminal of the first-stage amplifier is connected to the signal input terminal, and is used to amplify the power input at the signal input terminal and output it to the input terminal of the interstage balun network;

[0010] The output of the interstage balun network is connected to the input of the second stage amplifier; it is used to convert the single-ended signal after power amplification by the first stage amplifier into a differential signal, and output a first differential signal and a second differential signal.

[0011] The second-stage amplifier includes a first amplification module and a second amplification module, both composed of complementary metal-oxide-semiconductor (CMOS) semiconductors. The first input terminal and the second input terminal of the first amplification module are respectively connected to the first output terminal and the second output terminal of the interstage balun network. This amplifies the power of the first differential signal and the second differential signal, respectively, and outputs them to the input terminal of the second-stage output transformer network. The first input terminal and the second input terminal of the second amplification module are also connected to the first output terminal and the second output terminal of the interstage balun network, respectively. This amplifies the power of the first differential signal and the second differential signal, respectively, and outputs them to the input terminal of the second-stage output transformer network.

[0012] The second-stage output transformer network includes a first output transformer network and a second output transformer network; the first output terminal and the second output terminal of the first amplification module are respectively connected to the first input terminal and the second input terminal of the first output transformer network; the first output terminal and the second output terminal of the second amplification module are respectively connected to the first input terminal and the second input terminal of the second output transformer network; the first output terminal and the second output terminal of the first output transformer network are respectively connected to the input terminal of the power amplifier; the first output terminal and the second output terminal of the second output transformer network are respectively connected to the input terminal of the power amplifier.

[0013] The power amplifier includes a first power amplification unit, a second power amplification unit, a third power amplification unit, and a fourth power amplification unit. The input terminal of the first power amplification unit is connected to the first output terminal of the first output transformer network. The input terminal of the second power amplification unit is connected to the second output terminal of the first output transformer network. The input terminal of the third power amplification unit is connected to the first output terminal of the second output transformer network. The output terminals of the first, second, third, and fourth power amplification units are respectively connected to the first, second, third, and fourth input terminals of the power combining network. The power combining network is used to combine the amplified power output from the first and second power amplification units into a first output signal and output it from the first output terminal of the power combining network. The power combining network is also used to combine the amplified power output from the third and fourth power amplification units into a second output signal and output it from the second output terminal of the power combining network.

[0014] The signal output terminal is connected to the first output terminal and the second output terminal of the power combining network, respectively, and is used to output a single-ended signal synthesized by the power combining network.

[0015] Preferably, the power combining network includes an autotransformer; the autotransformer includes a first primary coil, a first secondary coil, a second secondary coil, and a third secondary coil, which are respectively coupled to the first primary coil; the first secondary coil, the second secondary coil, and the third secondary coil are connected in series.

[0016] The first end of the first primary coil is connected to the output of the first power amplifier unit as the first input of the power combining network; the second end of the first primary coil is connected to the output of the second power amplifier unit as the second input of the power combining network.

[0017] The first end of the second-stage coil is connected to the output end of the third power amplifier unit as the third input end of the power combining network; the second end of the second-stage coil is connected to the output end of the third power amplifier unit as the fourth input end of the power combining network.

[0018] The third-stage coil is connected to the signal output terminal and is used to output the output signal synthesized by the power combining unit.

[0019] Preferably, the first-stage amplifier includes a first input matching network and a first-stage amplification unit;

[0020] The first input matching network includes a first capacitor, a second capacitor, a first resistor, and a first inductor;

[0021] The first terminal of the first capacitor serves as the input terminal of the first-stage amplifier and is connected to the signal output terminal.

[0022] The first terminal of the second capacitor is connected to the second terminal of the first capacitor, and the second terminal of the second capacitor is grounded.

[0023] The first end of the first resistor is connected to the second end of the first capacitor, and the second end of the first resistor is connected to the first control electrode voltage.

[0024] The first end of the first inductor is connected to the second end of the first capacitor;

[0025] The first stage amplification unit includes a first field-effect transistor, a second field-effect transistor, a third capacitor, and a second resistor;

[0026] The gate of the first field-effect transistor is connected to the second terminal of the first inductor, and the source of the first field-effect transistor is grounded;

[0027] The source of the second field-effect transistor is connected to the drain of the first field-effect transistor, and the drain of the second field-effect transistor serves as the output terminal of the first stage amplifier, which is connected to the input terminal of the interstage balun.

[0028] The first terminal of the third capacitor is connected to the gate of the second field-effect transistor, and the second terminal of the third capacitor is grounded.

[0029] The first end of the second resistor is connected to the gate of the second field-effect transistor, and the second end of the second resistor is connected to the second control voltage.

[0030] Preferably, the interstage balun network includes a first transformer, a fourth capacitor, a fifth capacitor, and a third resistor;

[0031] The first end of the primary coil of the first transformer is connected to the output of the first stage amplifier as the input of the interstage balun network. The first end of the fourth capacitor is connected to the first end of the primary coil of the first transformer, and the second end of the fourth capacitor is connected to the second end of the primary coil of the first transformer. The first end of the secondary coil of the first transformer is connected to the first input of the first amplification module and the first input of the second amplification module, respectively. The second end of the secondary coil of the first transformer is connected to the second input of the first amplification module and the second input of the second amplification module, respectively. The first end of the fifth capacitor is connected to the first end of the secondary coil of the first transformer, and the second end of the fifth capacitor is connected to the second end of the secondary coil of the first transformer. The first end of the third resistor is connected to the third end of the secondary coil of the first transformer, and the second end of the third resistor is connected to the second control electrode voltage.

[0032] Preferably, the first amplification module includes a third field-effect transistor, a fourth field-effect transistor, a fifth field-effect transistor, a sixth field-effect transistor, and a fourth resistor;

[0033] The gate of the third field-effect transistor serves as the first input terminal of the first amplification module and is connected to the first terminal of the secondary coil of the interstage balun network. The source of the third field-effect transistor is grounded.

[0034] The source of the fourth field-effect transistor is connected to the drain of the third field-effect transistor, and the drain of the fourth field-effect transistor serves as the second output terminal of the first amplification module, which is connected to the second input terminal of the first output transformer network.

[0035] The gate of the fifth field-effect transistor serves as the second input terminal of the first amplification module and is connected to the second terminal of the secondary coil of the interstage balun network. The source of the fifth field-effect transistor is grounded.

[0036] The source of the sixth field-effect transistor is connected to the drain of the fifth field-effect transistor, the gate of the sixth field-effect transistor is connected to the gate of the fourth field-effect transistor, and the drain of the sixth field-effect transistor serves as the first output terminal of the first amplification module and is connected to the first input terminal of the first output transformer network.

[0037] The first end of the fourth resistor is connected to the gate of the fourth field-effect transistor, and the second end of the fourth resistor is connected to the second control electrode voltage.

[0038] The second amplification module includes a seventh field-effect transistor, an eighth field-effect transistor, a ninth field-effect transistor, a tenth field-effect transistor, and a fifth resistor;

[0039] The gate of the seventh field-effect transistor serves as the first input terminal of the second amplification module and is connected to the first terminal of the secondary coil of the interstage balun network. The source of the seventh field-effect transistor is grounded.

[0040] The source of the eighth field-effect transistor is connected to the drain of the seventh field-effect transistor, and the drain of the eighth field-effect transistor serves as the second output terminal of the second amplification module, which is connected to the second input terminal of the second output transformer network.

[0041] The gate of the ninth field-effect transistor serves as the second input terminal of the second amplification module and is connected to the second terminal of the secondary coil of the interstage balun network. The source of the ninth field-effect transistor is grounded.

[0042] The source of the tenth field-effect transistor is connected to the drain of the ninth field-effect transistor, the gate of the tenth field-effect transistor is connected to the gate of the eighth field-effect transistor, and the drain of the tenth field-effect transistor serves as the first output terminal of the second amplification module and is connected to the first input terminal of the second output transformer network.

[0043] The first end of the fifth resistor is connected to the gate of the eighth field-effect transistor, and the second end of the fifth resistor is connected to the second control electrode voltage.

[0044] Preferably, the first output transformer network includes a first output transformer, a sixth capacitor, and a seventh capacitor;

[0045] The sixth capacitor is connected in parallel with the primary coil of the first output transformer; the seventh capacitor is connected in parallel with the secondary coil of the first output transformer.

[0046] The first end of the primary coil of the first output transformer is connected to the first output terminal of the first output transformer network as the first input terminal of the first output transformer network; the second end of the primary coil of the first output transformer is connected to the second output terminal of the first output transformer network as the second input terminal of the first output transformer network.

[0047] The first end of the secondary coil of the first output transformer is connected to the input terminal of the first power amplifier unit as the first output terminal of the first output transformer network; the second end of the secondary coil of the first output transformer is connected to the input terminal of the second power amplifier unit as the second output terminal of the first output transformer network.

[0048] The second output transformer network includes a second output transformer, an eighth capacitor, and a ninth capacitor;

[0049] The eighth capacitor is connected in parallel with the primary coil of the second output transformer; the ninth capacitor is connected in parallel with the secondary coil of the second output transformer.

[0050] The first end of the primary coil of the second output transformer is connected to the first output terminal of the second output transformer network as the first input terminal of the second output transformer network; the second end of the primary coil of the second output transformer is connected to the second output terminal of the second output transformer network as the second input terminal of the second output transformer network.

[0051] The first end of the secondary coil of the second output transformer is connected to the input of the third power amplifier unit as the first output terminal of the second output transformer network; the second end of the secondary coil of the second output transformer is connected to the input of the fourth power amplifier unit as the second output terminal of the second output transformer network.

[0052] Preferably, the first power amplification unit includes a tenth capacitor and a first transistor; the first end of the tenth capacitor serves as the input end of the first power amplification unit and is connected to the first output end of the first output transformer network; the second end of the tenth capacitor is connected to the base of the first transistor; the emitter of the first transistor is grounded; and the collector of the first transistor is connected to the first end of the primary coil of the power combining network.

[0053] The second power amplifier unit includes an eleventh capacitor and a second transistor; the first end of the eleventh capacitor serves as the input terminal of the second power amplifier unit and is connected to the second output terminal of the first output transformer network; the second end of the eleventh capacitor is connected to the base of the second transistor; the emitter of the second transistor is grounded; and the collector of the second transistor is connected to the second end of the primary coil of the power combining network.

[0054] The third power amplifier unit includes a twelfth capacitor and a third transistor; the first terminal of the twelfth capacitor serves as the input terminal of the third power amplifier unit and is connected to the first output terminal of the second output transformer network; the second terminal of the twelfth capacitor is connected to the base of the third transistor; the emitter of the third transistor is grounded; and the collector of the third transistor is connected to the first terminal of the second stage coil of the power combining network.

[0055] The fourth power amplifier unit includes a thirteenth capacitor and a fourth transistor; the first terminal of the thirteenth capacitor serves as the input terminal of the fourth power amplifier unit and is connected to the second output terminal of the second output transformer network; the second terminal of the thirteenth capacitor is connected to the base of the fourth transistor; the emitter of the fourth transistor is grounded; and the collector of the fourth transistor is connected to the second terminal of the second stage coil of the power combining network.

[0056] The power amplifier further includes a fourteenth capacitor, a fifteenth capacitor, and a linearization bias circuit; the first terminal of the fourteenth capacitor is connected to the collector of the first transistor, and the second terminal of the fourteenth capacitor is connected to the collector of the second transistor; the first terminal of the fifteenth capacitor is connected to the collector of the third transistor, and the second terminal of the fifteenth capacitor is connected to the collector of the fourth transistor; the output terminal of the linearization bias circuit is connected to the base of the first transistor, the base of the second transistor, the base of the third transistor, and the base of the fourth transistor, respectively, and the input terminal of the linearization bias circuit is connected to a reference voltage.

[0057] Preferably, the linearization bias circuit includes a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a sixth resistor, and a sixteenth capacitor;

[0058] The emitter of the fifth transistor serves as the first output terminal of the linearization bias circuit, and is connected to the base of the first transistor and the base of the second transistor, respectively; the emitter of the sixth transistor serves as the second output terminal of the linearization bias circuit, and is connected to the base of the third transistor and the base of the fourth transistor, respectively; the collectors of the fifth transistor and the sixth transistor are connected to the power supply voltage, respectively.

[0059] The emitter of the seventh transistor is connected to the collector of the eighth transistor, the emitter of the eighth transistor is grounded, the base of the eighth transistor is connected to the collector of the eighth transistor, the collector of the seventh transistor is connected to the first terminal of the sixth resistor, and the second terminal of the sixth resistor is connected to the reference voltage.

[0060] The first terminal of the sixteenth capacitor is connected to the base of the fifth transistor, and the second terminal of the sixteenth capacitor is grounded.

[0061] Preferably, the power combining network further includes a seventeenth capacitor, an eighteenth capacitor, and a nineteenth capacitor. The first terminal of the nineteenth capacitor is connected to the first terminal of the first stage coil and the first terminal of the seventeenth capacitor, respectively, and the second terminal of the nineteenth capacitor is grounded. The second terminal of the seventeenth capacitor is connected to the second terminal of the third stage coil and the first terminal of the eighteenth capacitor, respectively, and the second terminal of the eighteenth capacitor is connected to the signal output terminal.

[0062] Preferably, the radio frequency power amplifier further includes a seventh resistor, the first end of which is connected to the signal output terminal, and the second end of which is grounded.

[0063] Compared with related technologies, in the embodiments of the present invention, the signal input terminal, driver amplifier, power amplifier, power combining network, and signal output terminal are sequentially electrically connected; the driver amplifier is sequentially electrically connected to the first-stage amplifier, interstage balun network, second-stage amplifier, and second-stage output transformer network; the driver stage amplifier is implemented using CMOS technology, the final stage of the power amplifier is implemented using GaAs HBT technology, and the three-port autotransformer power combining network is implemented on the substrate; CMOS amplifiers have cost advantages, but limited output power. Using CMOS technology to design the driver stage amplifier utilizes its cost advantages while providing sufficiently large drive power. GaAs HBT devices have high breakdown voltage, good linearity, and high efficiency, and are used as the final stage of the power amplifier to ensure the performance of the entire RF power amplifier. The metal lines on the substrate have a high quality factor, and the three-port autotransformer power combining network is implemented on the substrate with low insertion loss, thus improving the output power, efficiency, and linearity of the entire RF power amplifier. Attached Figure Description

[0064] The present invention will now be described in detail with reference to the accompanying drawings. The above and other aspects of the present invention will become clearer and more readily understood through the detailed description following the accompanying drawings. In the drawings:

[0065] Figure 1 This is a structural block diagram of the radio frequency power amplifier in an embodiment of the present invention;

[0066] Figure 2 This is a circuit diagram of the radio frequency power amplifier in an embodiment of the present invention;

[0067] Figure 3 This is a schematic diagram of the structure of the driver amplifier in an embodiment of the present invention;

[0068] Figure 4 This is a schematic diagram of the power amplifier and power combining network in an embodiment of the present invention;

[0069] Figure 5 This is a schematic diagram of the structure of a three-port autotransformer in an embodiment of the present invention.

[0070] Among them, 100 is the radio frequency power amplifier, 1 is the signal input terminal, 2 is the driver amplifier, 21 is the first stage amplifier, 22 is the interstage balun network, 23 is the second stage amplifier, 231 is the first amplification module, 232 is the second amplification module, 24 is the second stage output transformer network, 241 is the first output transformer network, 242 is the second output transformer network, 3 is the power amplifier, 31 is the linearization bias circuit, 4 is the power combining network, and 5 is the signal output terminal. Detailed Implementation

[0071] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein in the specification of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application, are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, not to describe a particular order.

[0072] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0073] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0074] Please see Figure 1-5 As shown, this embodiment of the invention provides a radio frequency (RF) power amplifier 100, which includes a signal input terminal 1, a driver amplifier 2 implemented using CMOS technology, a power amplifier 3 implemented using GaAs HBT technology, a power combining network 4, and a signal output terminal 5, all electrically connected and integrated on the same substrate. The driver amplifier 2 is electrically connected in sequence to a first-stage amplifier 21, an inter-stage balun network 22, a second-stage amplifier 23, and a second-stage output transformer network 24. The driver amplifier, the GaAs HBT power amplifier 3, and the three-port autotransformer power combining network 4 are three parts integrated on the same substrate.

[0075] The input terminal of the first stage amplifier 21 is connected to the signal input terminal 1, and is used to amplify the power input from the signal input terminal 1 and output it to the input terminal of the interstage balun network 22.

[0076] The output of the interstage balun network 22 is connected to the input of the second stage amplifier 23; it is used to convert the single-ended signal after power amplification by the first stage amplifier 21 into a differential signal, and output a first differential signal and a second differential signal.

[0077] The second-stage amplifier 23 includes a first amplification module 231 and a second amplification module 232, both composed of complementary metal-oxide-semiconductor (CMOS) semiconductors. The first and second input terminals of the first amplification module 231 are respectively connected to the first and second output terminals of the interstage balun network 22. This amplification amplifies the first differential signal and the second differential signal, respectively, and outputs them to the input terminal of the second-stage output transformer network 24. Similarly, the first and second input terminals of the second amplification module 232 are also connected to the first and second output terminals of the interstage balun network 22. These amplifications further amplify the first differential signal and the second differential signal, respectively, and output them to the input terminal of the second-stage output transformer network 24. The first amplification module 231 and the second amplification module 232 amplify the first differential signal and the second differential signal, respectively, and output them to the input terminal of the second-stage output transformer network 24.

[0078] The second-stage output transformer network 24 includes a first output transformer network 241 and a second output transformer network 242; the first output terminal and the second output terminal of the first amplification module 231 are respectively connected to the first input terminal and the second input terminal of the first output transformer network 241, the first output terminal and the second output terminal of the second amplification module 232 are respectively connected to the first input terminal and the second input terminal of the second output transformer network 242; the first output terminal and the second output terminal of the first output transformer network 241 are respectively connected to the input terminal of the power amplifier 3; the first output terminal and the second output terminal of the second output transformer network 242 are respectively connected to the input terminal of the power amplifier 3.

[0079] The power amplifier 3 includes a first power amplifier unit, a second power amplifier unit, a third power amplifier unit, and a fourth power amplifier unit. The input terminal of the first power amplifier unit is connected to the first output terminal of the first output transformer network 241. The input terminal of the second power amplifier unit is connected to the second output terminal of the first output transformer network 241. The input terminal of the third power amplifier unit is connected to the first output terminal of the second output transformer network 242. The input terminal of the fourth power amplifier unit is connected to the second output terminal of the second output transformer network 242. The output terminals of the first power amplifier unit, the second power amplifier unit, and the third power amplifier unit are connected. The output terminals of the first and second power amplification units are respectively connected to the first, second, third, and fourth input terminals of the power combining network 4. The power combining network 4 is used to combine the amplified power outputs of the first and second power amplification units into a first output signal and output it from the first output terminal. The power combining network 4 is also used to combine the amplified power outputs of the third and fourth power amplification units into a second output signal and output it from the second output terminal. The signal output terminal 5 is connected to both the first and second output terminals of the power combining network 4 and is used to output a single-ended signal synthesized by the power combining network 4.

[0080] In this embodiment, the power combining network 4 includes an autotransformer XFM4; the autotransformer includes a first primary coil, a first secondary coil, a second secondary coil, and a third secondary coil, which are respectively coupled to the first primary coil; the first secondary coil, the second secondary coil, and the third secondary coil are connected in series.

[0081] The first end of the first primary coil is connected to the output end of the first power amplifier unit as the first input end of the power combining network 4; the second end of the first primary coil is connected to the output end of the second power amplifier unit as the second input end of the power combining network 4.

[0082] The first end of the second-stage coil is connected to the output end of the third power amplifier unit as the third input end of the power combining network 4; the second end of the second-stage coil is connected to the output end of the third power amplifier unit as the fourth input end of the power combining network 4.

[0083] The third-stage coil is connected to the signal output terminal 5 and is used to output the output signal synthesized by the power combining unit.

[0084] In this embodiment, the power combining network 4 further includes a seventeenth capacitor C. 17 The eighteenth capacitor C 18 and the nineteenth capacitor C 19 The nineteenth capacitor C 19 The first end is connected to the first end of the first stage coil and the seventeenth capacitor C, respectively. 17 The first terminal, the nineteenth capacitor C 19 The second terminal is grounded; the seventeenth capacitor C 17 The second end is connected to the second end of the third-stage coil and the eighteenth capacitor C, respectively. 18 The first terminal, the eighteenth capacitor C 18 The second end is connected to the signal output terminal 5.

[0085] In this embodiment, the first stage amplifier 21 includes a first input matching network and a first stage amplification unit.

[0086] The first input matching network includes a first capacitor C1, a second capacitor C2, and a first resistor R. b1 And the first inductor L1; the first terminal of the first capacitor C1 serves as the input terminal of the first stage amplifier 21 and is connected to the signal output terminal 5. The first terminal of the second capacitor C2 is connected to the second terminal of the first capacitor C1, and the second terminal of the second capacitor C2 is grounded; the first resistor R b1 The first terminal is connected to the second terminal of the first capacitor C1, and the first resistor R b1 The second terminal is connected to the first control electrode voltage V. G1 The first terminal of the first inductor L1 is connected to the second terminal of the first capacitor C1; the first stage amplification unit includes a first field-effect transistor M1, a second field-effect transistor M2, a third capacitor C3, and a second resistor R. b2 The gate of the first field-effect transistor M1 is connected to the second terminal of the first inductor L1, and the source of the first field-effect transistor M1 is grounded; the source of the second field-effect transistor M2 is connected to the drain of the first field-effect transistor M1, and the drain of the second field-effect transistor M2 serves as the output terminal of the first stage amplifier 21, connected to the input terminal of the interstage balun; the first terminal of the third capacitor C3 is connected to the gate of the second field-effect transistor M2, and the second terminal of the third capacitor C3 is grounded; the second resistor R b2 The first terminal is connected to the gate of the second field-effect transistor M2, and the second resistor R b2 The second terminal is connected to the second control electrode voltage V. G2 .

[0087] The first-stage amplifier has a Cascode structure. The input signal RFin is connected to the gate of the first field-effect transistor M1 (common-source amplifier) ​​through an input matching network composed of the first capacitor C1, the second capacitor C2, and the first inductor L1. The gate of the second field-effect transistor M2 (common-gate amplifier) ​​is grounded through the third capacitor C3. The drain of the second field-effect transistor M2 is connected to an interstage balun network.

[0088] In this embodiment, the interstage balun network 22 includes a first transformer XFM1, a fourth capacitor C4, a fifth capacitor C5, and a third resistor R. b3 One end of the primary coil of XFM1 is connected to the drain of the second field-effect transistor M2, and the other end is connected to VDD, forming a balun structure to realize the conversion of single-ended signal to differential signal. The differential output signal of the interstage balun network 22 is connected to the input terminal of the second stage amplifier 22.

[0089] The first end of the primary coil of the first transformer XFM1 is connected to the output of the first stage amplifier 21 as the input of the interstage balun network 22. The first end of the fourth capacitor C4 is connected to the first end of the primary coil of the first transformer XFM1, and the second end of the fourth capacitor C4 is connected to the second end of the primary coil of the first transformer XFM1. The first end of the secondary coil of the first transformer XFM1 is connected to the first input of the first amplification module 231 and the first input of the second amplification module 232, respectively. The second end of the secondary coil of the first transformer XFM1 is connected to the second input of the first amplification module 231 and the second input of the second amplification module 232, respectively. The first end of the fifth capacitor C5 is connected to the first end of the secondary coil of the first transformer XFM1, and the second end of the fifth capacitor C5 is connected to the second end of the secondary coil of the first transformer XFM1. The third resistor R... b3 The first end is connected to the third end of the secondary coil of the first transformer XFM1, and the third resistor R b3 The second terminal is connected to the voltage of the second control electrode.

[0090] In this embodiment, the first amplification module 231 includes a third field-effect transistor M3, a fourth field-effect transistor M4, a fifth field-effect transistor M5, a sixth field-effect transistor M6, and a fourth resistor R. b4 .

[0091] The gate of the third field-effect transistor M3 serves as the first input terminal of the first amplification module 231 and is connected to the first terminal of the secondary coil of the interstage balun network 22. The source of the third field-effect transistor M3 is grounded.

[0092] The source of the fourth field-effect transistor M4 is connected to the drain of the third field-effect transistor M3. The drain of the fourth field-effect transistor M4 serves as the second output terminal of the first amplification module 231 and is connected to the second input terminal of the first output transformer network 241.

[0093] The gate of the fifth field-effect transistor M5 serves as the second input terminal of the first amplification module 231 and is connected to the second terminal of the secondary coil of the interstage balun network 22. The source of the fifth field-effect transistor M5 is grounded.

[0094] The source of the sixth field-effect transistor M6 is connected to the drain of the fifth field-effect transistor M5, the gate of the sixth field-effect transistor M6 is connected to the gate of the fourth field-effect transistor M4, and the drain of the sixth field-effect transistor M6 serves as the first output terminal of the first amplification module 231 and is connected to the first input terminal of the first output transformer network 241.

[0095] The fourth resistor R b4 The first terminal is connected to the gate of the fourth field-effect transistor M4, and the fourth resistor R b4 The second terminal is connected to the second control electrode voltage.

[0096] The second amplification module 232 includes a seventh field-effect transistor M7, an eighth field-effect transistor M8, a ninth field-effect transistor M9, and a tenth field-effect transistor M1. 10 and the fifth resistor R b5 ;

[0097] The gate of the seventh field-effect transistor M7 serves as the first input terminal of the second amplification module 232 and is connected to the first terminal of the secondary coil of the interstage balun network 22. The source of the seventh field-effect transistor M7 is grounded.

[0098] The source of the eighth field-effect transistor M8 is connected to the drain of the seventh field-effect transistor M7. The drain of the eighth field-effect transistor M8 serves as the second output terminal of the second amplification module 232 and is connected to the second input terminal of the second output transformer network 242.

[0099] The gate of the ninth field-effect transistor M9 serves as the second input terminal of the second amplification module 232 and is connected to the second terminal of the secondary coil of the interstage balun network 22. The source of the ninth field-effect transistor M9 is grounded.

[0100] The tenth field-effect transistor M 10 The source of the tenth field-effect transistor M9 is connected to the drain of the ninth field-effect transistor M9. 10 The gate of the tenth field-effect transistor M is connected to the gate of the eighth field-effect transistor M8. 10The drain of the second amplifier module 232 is used as the first output terminal of the second amplifier module 232 and is connected to the first input terminal of the second output transformer network 242.

[0101] The fifth resistor R b5 The first terminal is connected to the gate of the eighth field-effect transistor M8, and the fifth resistor R b5 The second terminal is connected to the second control electrode voltage.

[0102] In this embodiment, the first output transformer network 241 includes a first output transformer XFM2, a sixth capacitor C6, and a seventh capacitor C7;

[0103] The sixth capacitor C6 is connected in parallel with the primary coil of the first output transformer XFM2; the seventh capacitor C7 is connected in parallel with the secondary coil of the first output transformer XFM2.

[0104] The first end of the primary coil of the first output transformer XFM2 is connected to the first output terminal of the first output transformer XFM2 network 241 as the first input terminal; the second end of the primary coil of the first output transformer XFM2 is connected to the second output terminal of the first output transformer XFM2 network 241 as the second input terminal.

[0105] The first end of the secondary coil of the first output transformer XFM2 is connected to the input terminal of the first power amplifier unit as the first output terminal of the first output transformer XFM2 network 241; the second end of the secondary coil of the first output transformer XFM2 is connected to the input terminal of the second power amplifier unit as the second output terminal of the first output transformer XFM2 network 241.

[0106] The second output transformer XFM3 network 242 includes the second output transformer XFM3, the eighth capacitor C8, and the ninth capacitor C9;

[0107] The eighth capacitor C8 is connected in parallel with the primary coil of the second output transformer XFM3; the ninth capacitor C9 is connected in parallel with the secondary coil of the second output transformer XFM3.

[0108] The first end of the primary coil of the second output transformer XFM3 is connected to the first output terminal of the second output transformer XFM3 network 242 as the first input terminal; the second end of the primary coil of the second output transformer XFM3 is connected to the second output terminal of the second output transformer XFM3 network 242 as the second input terminal;

[0109] The first end of the secondary coil of the second output transformer XFM3 is connected to the input of the third power amplifier unit as the first output terminal of the second output transformer XFM3 network 242; the second end of the secondary coil of the second output transformer XFM3 is connected to the input of the fourth power amplifier unit as the second output terminal of the second output transformer XFM3 network 242.

[0110] The first amplification module 231 consists of M3 to M6. The third field-effect transistor M3, the fourth field-effect transistor M4, the fifth field-effect transistor M5, and the sixth field-effect transistor M6 each form a Cascode structure. The two pairs of Cascode structure amplifiers constitute the first differential amplifier structure. The differential output of the first differential amplifier is connected to the primary coil of transformer XFM2. The sixth capacitor C6 is connected in parallel across the primary coil of XFM2 to adjust the impedance and transform it to the optimal output power impedance of the first differential amplifier.

[0111] The second amplification module 232 consists of M7 to M... 10 Composition: The seventh and eighth field-effect transistors M7 and M8, the ninth field-effect transistor M9 and the tenth field-effect transistor M1 10 Each pair of Cascode amplifiers forms a Cascode structure, and these two pairs of Cascode amplifiers constitute the second differential amplifier structure. The differential output of the second differential amplifier is connected to the primary winding of transformer XFM3. The eighth capacitor C8 is connected in parallel across the primary winding of XFM3 to adjust the impedance, transforming it to the optimal output power impedance of the second differential amplifier. The output of the second-stage amplifier is connected to the second-stage output transformer network. The second-stage output transformer network consists of transformers XFM2 and XFM3 and capacitors C6 to C9, and its output is connected to the input of the GaAs HBT power amplifier.

[0112] In this embodiment, the first power amplification unit includes a tenth capacitor C. 10 and the first transistor Q1; the tenth capacitor C 10 The first terminal is connected as the input terminal of the first power amplifier unit to the first output terminal of the first output transformer network 241, and the tenth capacitor C 10 The second end is connected to the base of the first transistor Q1, the emitter of the first transistor Q1 is grounded, and the collector of the first transistor Q1 is connected to the first end of the primary coil of the power combining network 4.

[0113] The second power amplifier unit includes an eleventh capacitor C. 11 The second transistor Q2; the eleventh capacitor C 11 The first terminal is connected as the input terminal of the second power amplifier unit to the second output terminal of the first output transformer network 241, and the eleventh capacitor C11 The second end is connected to the base of the second transistor Q2, the emitter of the second transistor Q2 is grounded, and the collector of the second transistor Q2 is connected to the second end of the primary coil of the power combining network 4.

[0114] The third power amplification unit includes a twelfth capacitor C. 12 and the third transistor Q3; the twelfth capacitor C 12 The first terminal is connected as the input terminal of the third power amplifier unit to the first output terminal of the second output transformer network 242, and the twelfth capacitor C 12 The second end is connected to the base of the third transistor Q3, the emitter of the third transistor Q3 is grounded, and the collector of the third transistor Q3 is connected to the first end of the second stage coil of the power combining network 4.

[0115] The fourth power amplification unit includes a thirteenth capacitor C. 13 and the fourth transistor Q4; the thirteenth capacitor C 13 The first end is connected as the input end of the fourth power amplifier unit to the second output end of the second output transformer network 242, and the thirteenth capacitor C 13 The second end is connected to the base of the fourth transistor Q4, the emitter of the fourth transistor Q4 is grounded, and the collector of the fourth transistor Q4 is connected to the second end of the second stage coil of the power combining network 4.

[0116] The power amplifier 3 also includes a fourteenth capacitor C. 14 The fifteenth capacitor C 15 and linearization bias circuit 31; the fourteenth capacitor C 14 The first terminal of the fourteenth capacitor Q4 is connected to the collector of the first transistor Q1, and the second terminal of the fourteenth capacitor Q4 is connected to the collector of the second transistor Q2; the fifteenth capacitor C 15 The first end is connected to the collector of the third transistor Q3, and the fifteenth capacitor C 15 The second terminal is connected to the collector of the fourth transistor Q4; the output terminal of the linearization bias circuit 31 is connected to the base of the first transistor Q1, the base of the second transistor Q2, the base of the third transistor Q3, and the base of the fourth transistor Q4, respectively; the input terminal of the linearization bias circuit 31 is connected to the reference voltage V. REG .

[0117] In this embodiment, the linearization bias circuit 31 includes a fifth transistor Q5, a sixth transistor Q6, a seventh transistor Q7, an eighth transistor Q8, and a sixth resistor R. b6 and the sixteenth capacitor C 16 ;

[0118] The emitter of transistor Q5 serves as the first output terminal of the linearization bias circuit, and is connected to the base of transistor Q1 and the base of transistor Q2, respectively; the emitter of transistor Q6 serves as the second output terminal of the linearization bias circuit 31, and is connected to the base of transistor Q3 and the base of transistor Q4, respectively; the collectors of transistor Q5 and Q6 are connected to the power supply voltage, respectively.

[0119] The emitter of the seventh transistor Q7 is connected to the collector of the eighth transistor Q8. The emitter of the eighth transistor Q8 is grounded, and the base of the eighth transistor Q8 is connected to its collector. The collector of the seventh transistor Q7 is connected to the sixth resistor R. b6 The first end, the sixth resistor R b6 The second terminal is connected to the reference voltage;

[0120] The sixteenth capacitor C 16 The first terminal is connected to the base of the fifth transistor Q5, and the sixteenth capacitor C 16 The second end is grounded.

[0121] In this embodiment, the radio frequency power amplifier 100 further includes a seventh resistor R. b7 The seventh resistor R b7 The first end is connected to the signal output terminal 5, and the seventh resistor R b7 The second end is grounded.

[0122] In this embodiment, a driver amplifier 2, a GaAs HBT power amplifier 3, and a three-port autotransformer power combining network 4 are integrated on the same substrate. The driver amplifier 2 consists of an input matching network 1, a first-stage amplifier PA1, an interstage balun XFM1, second-stage differential amplifiers PA2-PA5, and output transformers XFM2 and XFM3. The GaAs HBT power amplifier 3 consists of differential HBT amplifiers PA6-PA9, with its output connected to the input of the three-port autotransformer power combining network. The three-port autotransformer power combining network is implemented on the substrate and is used to transform the load impedance RL to the optimal output impedance of PA6-PA9. Using CMOS technology to design the driver stage amplifier leverages its cost advantages while providing sufficient drive power. GaAs HBT devices have high breakdown voltage, good linearity, and high efficiency; used as the final stage of the power amplifier, they ensure the overall performance of the RF power amplifier. The high quality factor of the metal lines on the substrate and the low insertion loss of the three-port autotransformer power combining network, all contribute to improving the output power, efficiency, and linearity of the entire RF power amplifier.

[0123] Compared with existing technologies, in the embodiments of the present invention, the signal input terminal, driver amplifier, power amplifier, power combining network, and signal output terminal are sequentially electrically connected; the driver amplifier is sequentially electrically connected to a first-stage amplifier, an interstage balun network, a second-stage amplifier, and a second-stage output transformer network; the driver stage amplifier is implemented using CMOS technology, the final stage of the power amplifier is implemented using GaAs HBT technology, and the three-port autotransformer power combining network is implemented on the substrate; CMOS amplifiers have cost advantages, but limited output power. Using CMOS technology to design the driver stage amplifier utilizes its cost advantages while providing sufficiently large drive power. GaAs HBT devices have high breakdown voltage, good linearity, and high efficiency, and are used as the final stage of the power amplifier to ensure the performance of the entire RF power amplifier. The metal lines on the substrate have a high quality factor, and the three-port autotransformer power combining network is implemented on the substrate with low insertion loss, thus improving the output power, efficiency, and linearity of the entire RF power amplifier.

[0124] It should be noted that the various embodiments described above with reference to the accompanying drawings are merely illustrative of the present invention and not intended to limit its scope. Those skilled in the art should understand that any modifications or equivalent substitutions made to the present invention without departing from its spirit and scope should be included within the scope of the present invention. Furthermore, unless the context otherwise requires, words appearing in the singular include those in the plural, and vice versa. Additionally, unless specifically stated otherwise, all or part of any embodiment may be used in conjunction with all or part of any other embodiment.

Claims

1. A radio frequency power amplifier, characterized in that, The radio frequency power amplifier includes a signal input terminal, a driver amplifier implemented using CMOS technology, a power amplifier implemented using GaAs HBT technology, a power combining network, and a signal output terminal, which are electrically connected in sequence and integrated on the same substrate; the driver amplifier includes a first-stage amplifier, an inter-stage balun network, a second-stage amplifier, and a second-stage output transformer network, which are electrically connected in sequence. The input terminal of the first-stage amplifier is connected to the signal input terminal, and is used to amplify the power input at the signal input terminal and output it to the input terminal of the interstage balun network; The output of the interstage balun network is connected to the input of the second stage amplifier; it is used to convert the single-ended signal after power amplification by the first stage amplifier into a differential signal, and output a first differential signal and a second differential signal. The second-stage amplifier includes a first amplification module and a second amplification module, both composed of complementary metal-oxide-semiconductor (CMOS) semiconductors. The first input terminal and the second input terminal of the first amplification module are respectively connected to the first output terminal and the second output terminal of the interstage balun network. This amplifies the power of the first differential signal and the second differential signal, respectively, and outputs them to the input terminal of the second-stage output transformer network. The first input terminal and the second input terminal of the second amplification module are also connected to the first output terminal and the second output terminal of the interstage balun network, respectively. This amplifies the power of the first differential signal and the second differential signal, respectively, and outputs them to the input terminal of the second-stage output transformer network. The second-stage output transformer network includes a first output transformer network and a second output transformer network; the first output terminal and the second output terminal of the first amplification module are respectively connected to the first input terminal and the second input terminal of the first output transformer network; the first output terminal and the second output terminal of the second amplification module are respectively connected to the first input terminal and the second input terminal of the second output transformer network; the first output terminal and the second output terminal of the first output transformer network are respectively connected to the input terminal of the power amplifier; the first output terminal and the second output terminal of the second output transformer network are respectively connected to the input terminal of the power amplifier. The power amplifier includes a first power amplification unit, a second power amplification unit, a third power amplification unit, and a fourth power amplification unit. The input terminal of the first power amplification unit is connected to the first output terminal of the first output transformer network. The input terminal of the second power amplification unit is connected to the second output terminal of the first output transformer network. The input terminal of the third power amplification unit is connected to the first output terminal of the second output transformer network. The output terminals of the first, second, third, and fourth power amplification units are respectively connected to the first, second, third, and fourth input terminals of the power combining network. The power combining network is used to combine the amplified power output from the first and second power amplification units into a first output signal and output it from the first output terminal of the power combining network. The power combining network is also used to combine the amplified power output from the third and fourth power amplification units into a second output signal and output it from the second output terminal of the power combining network. The signal output terminal is connected to the first output terminal and the second output terminal of the power combining network, respectively, and is used to output a single-ended signal synthesized by the power combining network.

2. The radio frequency power amplifier according to claim 1, characterized in that, The power combining network includes an autotransformer; the autotransformer includes a first primary coil, a first secondary coil, a second secondary coil, and a third secondary coil, which are respectively coupled to the first primary coil; the first secondary coil, the second secondary coil, and the third secondary coil are connected in series; The first end of the first primary coil is connected to the output of the first power amplifier unit as the first input of the power combining network; the second end of the first primary coil is connected to the output of the second power amplifier unit as the second input of the power combining network. The first end of the second-stage coil is connected to the output end of the third power amplifier unit as the third input end of the power combining network; the second end of the second-stage coil is connected to the output end of the third power amplifier unit as the fourth input end of the power combining network. The third-stage coil is connected to the signal output terminal and is used to output the output signal synthesized by the power combining unit.

3. The radio frequency power amplifier according to claim 1, characterized in that, The first-stage amplifier includes a first input matching network and a first-stage amplification unit; The first input matching network includes a first capacitor, a second capacitor, a first resistor, and a first inductor; The first terminal of the first capacitor serves as the input terminal of the first-stage amplifier and is connected to the signal output terminal. The first terminal of the second capacitor is connected to the second terminal of the first capacitor, and the second terminal of the second capacitor is grounded. The first end of the first resistor is connected to the second end of the first capacitor, and the second end of the first resistor is connected to the first control electrode voltage. The first end of the first inductor is connected to the second end of the first capacitor; The first stage amplification unit includes a first field-effect transistor, a second field-effect transistor, a third capacitor, and a second resistor; The gate of the first field-effect transistor is connected to the second terminal of the first inductor, and the source of the first field-effect transistor is grounded; The source of the second field-effect transistor is connected to the drain of the first field-effect transistor, and the drain of the second field-effect transistor serves as the output terminal of the first stage amplifier, which is connected to the input terminal of the interstage balun. The first terminal of the third capacitor is connected to the gate of the second field-effect transistor, and the second terminal of the third capacitor is grounded. The first end of the second resistor is connected to the gate of the second field-effect transistor, and the second end of the second resistor is connected to the second control voltage.

4. The radio frequency power amplifier according to claim 3, characterized in that, The interstage balun network includes a first transformer, a fourth capacitor, a fifth capacitor, and a third resistor; The first end of the primary coil of the first transformer is connected to the output of the first stage amplifier as the input of the interstage balun network. The first end of the fourth capacitor is connected to the first end of the primary coil of the first transformer, and the second end of the fourth capacitor is connected to the second end of the primary coil of the first transformer. The first end of the secondary coil of the first transformer is connected to the first input of the first amplification module and the first input of the second amplification module, respectively. The second end of the secondary coil of the first transformer is connected to the second input of the first amplification module and the second input of the second amplification module, respectively. The first end of the fifth capacitor is connected to the first end of the secondary coil of the first transformer, and the second end of the fifth capacitor is connected to the second end of the secondary coil of the first transformer. The first end of the third resistor is connected to the third end of the secondary coil of the first transformer, and the second end of the third resistor is connected to the second control electrode voltage.

5. The radio frequency power amplifier according to claim 4, characterized in that, The first amplification module includes a third field-effect transistor, a fourth field-effect transistor, a fifth field-effect transistor, a sixth field-effect transistor, and a fourth resistor; The gate of the third field-effect transistor serves as the first input terminal of the first amplification module and is connected to the first terminal of the secondary coil of the interstage balun network. The source of the third field-effect transistor is grounded. The source of the fourth field-effect transistor is connected to the drain of the third field-effect transistor, and the drain of the fourth field-effect transistor serves as the second output terminal of the first amplification module, which is connected to the second input terminal of the first output transformer network. The gate of the fifth field-effect transistor serves as the second input terminal of the first amplification module and is connected to the second terminal of the secondary coil of the interstage balun network. The source of the fifth field-effect transistor is grounded. The source of the sixth field-effect transistor is connected to the drain of the fifth field-effect transistor, the gate of the sixth field-effect transistor is connected to the gate of the fourth field-effect transistor, and the drain of the sixth field-effect transistor serves as the first output terminal of the first amplification module and is connected to the first input terminal of the first output transformer network. The first end of the fourth resistor is connected to the gate of the fourth field-effect transistor, and the second end of the fourth resistor is connected to the second control electrode voltage. The second amplification module includes a seventh field-effect transistor, an eighth field-effect transistor, a ninth field-effect transistor, a tenth field-effect transistor, and a fifth resistor; The gate of the seventh field-effect transistor serves as the first input terminal of the second amplification module and is connected to the first terminal of the secondary coil of the interstage balun network. The source of the seventh field-effect transistor is grounded. The source of the eighth field-effect transistor is connected to the drain of the seventh field-effect transistor, and the drain of the eighth field-effect transistor serves as the second output terminal of the second amplification module, which is connected to the second input terminal of the second output transformer network. The gate of the ninth field-effect transistor serves as the second input terminal of the second amplification module and is connected to the second terminal of the secondary coil of the interstage balun network. The source of the ninth field-effect transistor is grounded. The source of the tenth field-effect transistor is connected to the drain of the ninth field-effect transistor, the gate of the tenth field-effect transistor is connected to the gate of the eighth field-effect transistor, and the drain of the tenth field-effect transistor serves as the first output terminal of the second amplification module and is connected to the first input terminal of the second output transformer network. The first end of the fifth resistor is connected to the gate of the eighth field-effect transistor, and the second end of the fifth resistor is connected to the second control electrode voltage.

6. The radio frequency power amplifier according to claim 5, characterized in that, The first output transformer network includes a first output transformer, a sixth capacitor, and a seventh capacitor; The sixth capacitor is connected in parallel with the primary coil of the first output transformer; the seventh capacitor is connected in parallel with the secondary coil of the first output transformer. The first end of the primary coil of the first output transformer is connected to the first output terminal of the first output transformer network as the first input terminal of the first output transformer network; the second end of the primary coil of the first output transformer is connected to the second output terminal of the first output transformer network as the second input terminal of the first output transformer network. The first end of the secondary coil of the first output transformer is connected to the input terminal of the first power amplifier unit as the first output terminal of the first output transformer network; the second end of the secondary coil of the first output transformer is connected to the input terminal of the second power amplifier unit as the second output terminal of the first output transformer network. The second output transformer network includes a second output transformer, an eighth capacitor, and a ninth capacitor; The eighth capacitor is connected in parallel with the primary coil of the second output transformer; the ninth capacitor is connected in parallel with the secondary coil of the second output transformer. The first end of the primary coil of the second output transformer is connected to the first output terminal of the second output transformer network as the first input terminal of the second output transformer network; the second end of the primary coil of the second output transformer is connected to the second output terminal of the second output transformer network as the second input terminal of the second output transformer network. The first end of the secondary coil of the second output transformer is connected to the input of the third power amplifier unit as the first output terminal of the second output transformer network; the second end of the secondary coil of the second output transformer is connected to the input of the fourth power amplifier unit as the second output terminal of the second output transformer network.

7. The radio frequency power amplifier according to claim 6, characterized in that, The first power amplifier unit includes a tenth capacitor and a first transistor; the first end of the tenth capacitor serves as the input terminal of the first power amplifier unit and is connected to the first output terminal of the first output transformer network; the second end of the tenth capacitor is connected to the base of the first transistor; the emitter of the first transistor is grounded; and the collector of the first transistor is connected to the first end of the primary coil of the power combining network. The second power amplifier unit includes an eleventh capacitor and a second transistor; the first end of the eleventh capacitor serves as the input terminal of the second power amplifier unit and is connected to the second output terminal of the first output transformer network; the second end of the eleventh capacitor is connected to the base of the second transistor; the emitter of the second transistor is grounded; and the collector of the second transistor is connected to the second end of the primary coil of the power combining network. The third power amplifier unit includes a twelfth capacitor and a third transistor; the first terminal of the twelfth capacitor serves as the input terminal of the third power amplifier unit and is connected to the first output terminal of the second output transformer network; the second terminal of the twelfth capacitor is connected to the base of the third transistor; the emitter of the third transistor is grounded; and the collector of the third transistor is connected to the first terminal of the second stage coil of the power combining network. The fourth power amplifier unit includes a thirteenth capacitor and a fourth transistor; the first terminal of the thirteenth capacitor serves as the input terminal of the fourth power amplifier unit and is connected to the second output terminal of the second output transformer network; the second terminal of the thirteenth capacitor is connected to the base of the fourth transistor; the emitter of the fourth transistor is grounded; and the collector of the fourth transistor is connected to the second terminal of the second stage coil of the power combining network. The power amplifier further includes a fourteenth capacitor, a fifteenth capacitor, and a linearization bias circuit; the first terminal of the fourteenth capacitor is connected to the collector of the first transistor, and the second terminal of the fourteenth capacitor is connected to the collector of the second transistor; the first terminal of the fifteenth capacitor is connected to the collector of the third transistor, and the second terminal of the fifteenth capacitor is connected to the collector of the fourth transistor; the output terminal of the linearization bias circuit is connected to the base of the first transistor, the base of the second transistor, the base of the third transistor, and the base of the fourth transistor, respectively, and the input terminal of the linearization bias circuit is connected to a reference voltage.

8. The radio frequency power amplifier according to claim 7, characterized in that, The linearization bias circuit includes a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a sixth resistor, and a sixteenth capacitor; The emitter of the fifth transistor serves as the first output terminal of the linearization bias circuit, and is connected to the base of the first transistor and the base of the second transistor, respectively; the emitter of the sixth transistor serves as the second output terminal of the linearization bias circuit, and is connected to the base of the third transistor and the base of the fourth transistor, respectively; the collectors of the fifth transistor and the sixth transistor are connected to the power supply voltage, respectively. The emitter of the seventh transistor is connected to the collector of the eighth transistor, the emitter of the eighth transistor is grounded, the base of the eighth transistor is connected to the collector of the eighth transistor, the collector of the seventh transistor is connected to the first terminal of the sixth resistor, and the second terminal of the sixth resistor is connected to the reference voltage. The first terminal of the sixteenth capacitor is connected to the base of the fifth transistor, and the second terminal of the sixteenth capacitor is grounded.

9. The radio frequency power amplifier according to claim 2, characterized in that, The power combining network further includes a seventeenth capacitor, an eighteenth capacitor, and a nineteenth capacitor. The first terminal of the nineteenth capacitor is connected to the first terminal of the first stage coil and the first terminal of the seventeenth capacitor, respectively, and the second terminal of the nineteenth capacitor is grounded. The second terminal of the seventeenth capacitor is connected to the second terminal of the third stage coil and the first terminal of the eighteenth capacitor, respectively, and the second terminal of the eighteenth capacitor is connected to the signal output terminal.

10. The radio frequency power amplifier according to claim 1, characterized in that, The radio frequency power amplifier also includes a seventh resistor, the first end of which is connected to the signal output terminal, and the second end of which is grounded.

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