A GaN radio frequency front-end circuit, TR component and preparation method thereof

Abstract

The present invention provides a GaN radio frequency front-end circuit, a TR component, and a preparation method thereof. The circuit includes: a transceiver port, a transmitting branch, and a receiving branch. The source of the first GaN power switch tube is connected between the output end of the transmitting branch and the output end of the GaN power amplifier, and the drain is grounded. A series inductor is provided at the output end of the GaN power amplifier. The series inductor and the equivalent capacitance of the first GaN power switch tube are used to achieve impedance matching of the output end of the GaN power amplifier, wherein the equivalent capacitance is the equivalent capacitance of the first GaN power switch tube when it is in the cut-off state. The present invention can form an LC impedance matching circuit with the series inductor and the equivalent capacitance of the GaN power switch tube to achieve impedance matching of the output end of the GaN power amplifier. It not only avoids the influence of the GaN power switch tube on the output impedance matching of the GaN power amplifier, but also reduces the number of devices and the volume of the GaN radio frequency front-end circuit.

Description

Technical Field

[0001] The present invention relates to the field of microwave technology, and in particular to a GaN radio frequency front-end circuit, a TR component, and a preparation method thereof. Background Art

[0002] In microwave systems, particularly those such as phased array radars and communication base stations, the T / R components are being separated into two circuits: the transceiver front-end and the amplitude and phase control circuits, with functional integration taking place. The transceiver front-end is increasingly adopting a multifunctional RF front-end chip solution that integrates a power amplifier, low-noise amplifier, and power switch. By varying the level of the switch control signal, the operating state of the transmit and receive branches is switched.

[0003] As a core component of modern T / R modules, RF front-end multifunction chips must meet the requirements of high performance, high transmit power, high transmit efficiency, low receive noise, miniaturization, and low cost. Because GaN materials can achieve higher power and efficiency within the same size, RF front-end multifunction chips tend to be manufactured using GaN materials and processes to achieve superior performance.

[0004] Existing GaN RF front-end multifunctional chips cascade separately designed GaN power switches, GaN power amplifiers, and low-noise amplifiers onto a single chip. Compared to the multi-chip discrete RF front-end assembly process, this offers a high level of integration and reduces the size of the T / R components. However, the transmission efficiency and receiving noise figure are less than ideal, and there is often a deterioration in the power and efficiency of the transmission branch. This is because the GaN power switch, as the core component that controls the switching of the transmission branch channels, is cascaded with the GaN power amplifier to form the transmission branch. Since the GaN power switch is turned off when the transmission branch is operating, it is equivalent to a parallel capacitor to ground. Therefore, the output matching of the GaN power amplifier deviates from the design, causing the power and efficiency of the transmission branch to deviate from the original design values. Summary of the Invention

[0005] Embodiments of the present invention provide a GaN RF front-end circuit, a TR component, and a method for manufacturing the same, to address the problem that the output impedance matching of a GaN power amplifier is affected by a GaN power switch tube, and the transmit branch power and efficiency of the GaN RF front-end circuit deviate from the designed values.

[0006] In the first aspect, an embodiment of the present invention provides a GaN RF front-end circuit, comprising: a transceiver port, a transmitting branch, and a receiving branch. The transceiver port connects the output end of the transmitting branch and the input end of the receiving branch, wherein the transceiver port is also used to connect a transceiver antenna. The transmitting branch includes a GaN power amplifier and a first GaN power switch tube. The output end of the transmitting branch is connected to the output end of the GaN power amplifier. The source of the first GaN power switch tube is connected between the output end of the transmitting branch and the output end of the GaN power amplifier, and the drain is grounded. A first series inductor is also provided between the output end of the transmitting branch and the output end of the GaN power amplifier. The equivalent capacitance of the first series inductor and the first GaN power switch tube is used to achieve impedance matching of the output end of the GaN power amplifier, wherein the equivalent capacitance is the equivalent capacitance of the first GaN power switch tube when it is in the cut-off state.

[0007] In a possible implementation, the number of the first GaN power switch tubes is the same as the number of the first series inductors, and the number is greater than 1; and one end of each first series inductor away from the GaN power amplifier is connected to a first GaN power switch tube.

[0008] In a possible implementation, the number of the first GaN power switch tubes is 2, and the number of the first series inductors is 2.

[0009] In a possible implementation, the GaN RF front-end circuit is a RF front-end chip based on the MMIC process.

[0010] In one possible implementation, the GaN RF front-end circuit is a RF front-end board-level circuit based on discrete devices.

[0011] In one possible implementation, the receiving branch includes a low-noise amplifier and a second GaN power switch. The input of the receiving branch is connected to the input of the low-noise amplifier. The source of the second GaN power switch is connected between the input of the receiving branch and the input of the low-noise amplifier, and the drain is grounded.

[0012] In one possible implementation, a second series inductor is further provided between the input of the receiving branch and the input of the low-noise amplifier. The second series inductor and the equivalent capacitance of the second GaN power switch are used to achieve impedance matching at the input of the low-noise amplifier, where the equivalent capacitance is the equivalent capacitance of the second GaN power switch in an off state.

[0013] In a possible implementation, a series capacitor is further provided between the output end of the transmitting branch and the output end of the GaN power amplifier.

[0014] In a second aspect, an embodiment of the present invention provides a TR component, comprising a GaN RF front-end circuit as described in any possible implementation of the first aspect.

[0015] In a third aspect, an embodiment of the present invention provides a method for preparing a GaN RF front-end circuit, which is applied to the GaN RF front-end circuit as described in any possible implementation of the first aspect. The GaN RF front-end circuit is an RF front-end chip based on the MMIC process. The method includes:

[0016] Based on the GaN RF front-end circuit, the inductance value of the first series inductor and the equivalent capacitance value of the first GaN power switch tube are determined through impedance matching simulation.

[0017] Based on the inductance value of the first series inductor and the equivalent capacitance value of the first GaN power switch tube, sizes of the first series inductor and the first GaN power switch tube are determined through structural simulation.

[0018] Based on the MMIC process, the dimensions of the first series inductor and the first GaN power switch tube, a GaN radio frequency front-end circuit is prepared.

[0019] In a fourth aspect, an embodiment of the present invention provides a method for preparing a GaN RF front-end circuit, which is applied to the GaN RF front-end circuit as described in any possible implementation of the first aspect. The GaN RF front-end circuit is a RF front-end board-level circuit based on discrete devices. The method includes:

[0020] The inductance value of the first series inductor is determined through impedance matching simulation based on the equivalent capacitance value of the GaN RF front-end circuit and the first GaN power switch tube.

[0021] Based on the board-level circuit assembly process, the inductance value of the first series inductor and the equivalent capacitance value of the first GaN power switch tube, a GaN RF front-end circuit is assembled.

[0022] An embodiment of the present invention provides a GaN radio frequency front-end circuit, a TR component, and a method for manufacturing the same. The circuit includes a transceiver port, a transmitting branch, and a receiving branch. The transceiver port connects the output of the transmitting branch and the input of the receiving branch, wherein the transceiver port is also used to connect to a transmitting and receiving antenna. The transmitting branch includes a GaN power amplifier and a first GaN power switch tube. The output of the transmitting branch is connected to the output of the GaN power amplifier. The source of the first GaN power switch tube is connected between the output of the transmitting branch and the output of the GaN power amplifier, and the drain is grounded. A series inductor is also provided between the output of the transmitting branch and the output of the GaN power amplifier. The series inductor and the equivalent capacitance of the first GaN power switch tube are used to achieve impedance matching at the output of the GaN power amplifier, wherein the equivalent capacitance is the equivalent capacitance of the first GaN power switch tube when in the off state. The present invention forms an LC impedance matching circuit with the series inductor and the equivalent capacitance of the first GaN power switch tube of the parallel branch when in the off state to achieve impedance matching at the output of the GaN power amplifier. When the transmit branch is operating, the equivalent capacitance of the first GaN power switch replaces the parallel branch capacitance in the existing LC impedance matching circuit to achieve impedance matching. This, on the one hand, prevents the GaN power switch from affecting the output impedance matching of the GaN power amplifier, and prevents the transmit branch power and efficiency of the GaN RF front-end circuit from deviating from the designed values. Furthermore, replacing the capacitance of the existing matching circuit with the equivalent capacitance of the first GaN power switch reduces the number of components and the size of the GaN RF front-end circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0024] Figure 1 This is a schematic diagram of the structure of a GaN radio frequency front-end circuit in the prior art;

[0025] Figure 2 yes Figure 1 Equivalent circuit diagram of RF front-end circuit;

[0026] Figure 3 This is a schematic structural diagram of a GaN radio frequency front-end circuit provided by an embodiment of the present invention;

[0027] Figure 4 1 is a schematic structural diagram of another GaN RF front-end circuit provided by an embodiment of the present invention;

[0028] Figure 51 is a schematic structural diagram of a third GaN RF front-end circuit provided by an embodiment of the present invention;

[0029] Figure 6 1 is a schematic structural diagram of a fourth GaN RF front-end circuit provided by an embodiment of the present invention;

[0030] Figure 7 This is a schematic structural diagram of the fifth GaN RF front-end circuit provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0031] To help those skilled in the art better understand this solution, the following will clearly describe the technical solutions in the embodiments of this solution in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of this solution, not all of it. Based on the embodiments of this solution, all other embodiments obtained by those skilled in the art without creative work should fall within the scope of protection of this solution.

[0032] Throughout the specification, claims, and accompanying figures of this solution, the term "including" and any variations thereof mean "including, but not limited to," and are intended to cover non-exclusive inclusions and are not limited to the examples listed herein. Furthermore, the terms "first" and "second," etc., are used to distinguish between different objects, not to describe a specific order.

[0033] The following is a detailed description of the implementation of the present invention with reference to the accompanying drawings:

[0034] Existing GaN RF front-end multifunction chips combine separately designed GaN power switches, GaN power amplifiers, and low-noise amplifiers (LNAs) into a single chip. Compared to multi-chip discrete RF front-end assembly processes, this approach offers a higher level of integration and reduces the size of T / R components. However, these chips offer suboptimal transmit efficiency and receive noise figure, and often suffer from transmit branch power degradation and efficiency issues.

[0035] This is because the GaN power switch is the core component for controlling the channel switching of the transmitting branch 200 , and is cascaded with the GaN power amplifier 201 to form the transmitting branch 200 . The GaN power switch tube affects the output impedance matching of the GaN power amplifier 201 . Figure 1 This is a schematic diagram of the structure of a GaN RF front-end circuit. Transmitter branch 200 includes a GaN power switch and a GaN power amplifier 201 connected in parallel. The output of GaN power amplifier 201 is equipped with an output impedance matching circuit. When the GaN power switch is turned off, it is in the cutoff state. Transmitter branch 200, in operation, transmits signals to the transceiver. Figure 2 yes Figure 1Equivalent circuit diagram of the RF front-end circuit. Because the GaN power switch is off when transmit branch 200 is operating, it acts as a parallel capacitor to ground. This equivalent capacitor pulls the output impedance of GaN power amplifier 201, causing the output impedance matching of GaN power amplifier 201 to deviate from the designed value. This causes the power and efficiency of transmit branch 200 to deviate from the original design values.

[0036] Embodiments of the present invention provide a GaN RF front-end circuit, a TR component, and a method for manufacturing the same, to address the problem that the output impedance matching of the GaN power amplifier 201 is affected by the GaN power switch tube, and the power and efficiency of the transmitting branch 200 of the GaN RF front-end circuit deviate from the design values.

[0037] Figure 3 A schematic diagram of the structure of a GaN RF front-end circuit provided by an embodiment of the present invention. Figure 3 , the circuit includes:

[0038] Transceiver port 100 , transmit branch 200 and receive branch 300 .

[0039] Transceiver port 100 connects the output of transmit branch 200 and the input of receive branch 300. Transceiver port 100 is also used to connect to a transceiver antenna. Transmitter branch 200 includes a GaN power amplifier 201 and a first GaN power switch 202. The output of transmit branch 200 is connected to the output of GaN power amplifier 201.

[0040] The source of the first GaN power switch tube 202 is connected between the output end of the transmitting branch 200 and the output end of the GaN power amplifier 201 , and the drain is grounded.

[0041] A first series inductor 203 is further provided between the output of the transmitting branch 200 and the output of the GaN power amplifier 201. The first series inductor 203 and the equivalent capacitance of the first GaN power switch 202 are used to achieve impedance matching at the output of the GaN power amplifier 201. The equivalent capacitance is the equivalent capacitance of the first GaN power switch 202 when it is in the off state.

[0042] One end of the transceiver port 100 is connected to the output of the transmitting branch 200 and the input of the receiving branch 300. The other end is connected to the transceiver antenna. The input of the transmitting branch 200 receives the transmit signal, which is amplified by the GaN power amplifier 201 and then output to the transceiver port 100. The signal is then transmitted through the transceiver port 100 and the transceiver antenna. The receiving branch 300 receives the echo signal input via the transceiver antenna and the transceiver port 100. When the transmitting branch 200 is operating, the receiving branch 300 is disabled. When the receiving branch 300 is operating, the transmitting branch 200 is disabled.

[0043] The transmitting branch 200 is turned on and off by the first GaN power switch tube 202. The source of the first GaN power switch tube 202 is connected between the output end of the transmitting branch 200 and the output end of the GaN power amplifier 201, and the drain is grounded. The gate of the first GaN power switch tube 202 is controlled by an external signal to turn the switch tube on and off. When the first GaN power switch tube 202 is turned on, that is, in the on state, the transmitting branch 200 is in the off state because the drain is grounded. When the first GaN power switch tube 202 is turned off, that is, in the off state, the transmitting branch 200 is in the on state, that is, in the working state. When the first GaN power switch tube 202 is in the off state, it is equivalent to the capacitor of the parallel branch being grounded. One end of the equivalent capacitor is connected between the output end of the transmitting branch 200 and the output end of the GaN power amplifier 201, and the other end is grounded.

[0044] The first series inductor 203 is provided between the output end of the transmitting branch 200 and the output end of the GaN power amplifier 201 , and between the source of the first GaN power switch 202 and the output end of the GaN power amplifier 201 .

[0045] When the first GaN power switch 202 is in the off state, the transmitting branch 200 is in the operating state. The first series inductor 203 and the equivalent capacitance of the first GaN power switch 202 form an LC impedance matching circuit, which is used to achieve impedance matching at the output end of the GaN power amplifier 201. When the first GaN power switch 202 is in the on state, the transmitting branch 200 is in the off state and is not operating.

[0046] The embodiment of the present invention realizes impedance matching of the output end of the GaN power amplifier 201 by forming an LC impedance matching circuit with the equivalent capacitance of the first series inductor 203 and the first GaN power switch tube 202 in the parallel branch in the off state. When the transmitting branch 200 is working, the equivalent capacitance of the first GaN power switch tube 202 is used to replace the parallel branch capacitance in the existing LC impedance matching circuit to achieve impedance matching. On the one hand, the influence of the GaN power switch tube on the output impedance matching of the GaN power amplifier 201 is avoided, and the power and efficiency of the transmitting branch 200 of the GaN RF front-end circuit are prevented from deviating from the design value. On the other hand, the equivalent capacitance of the first GaN power switch tube 202 is used to replace the capacitance of the existing matching circuit, and the equivalent capacitance is used as part of the impedance matching circuit, which reduces the number of components and reduces the volume of the GaN RF front-end circuit. When the transmitting branch 200 is working, the first GaN power switch tube 202 plays both a switching role and an impedance matching role.

[0047] The embodiments of the present invention simplify circuit topology, reduce unnecessary matching branches, reduce the number of circuit components, and lower insertion loss. They also prevent parasitic parameters introduced by the GaN power switch equivalent circuit from pulling the impedance of the GaN power amplifier 201, eliminating mismatch losses introduced by impedance pulling, thereby enabling the GaN RF front-end multi-function chip to have higher transmission efficiency and a smaller size. In typical application frequency bands such as X and Ku, the GaN RF front-end multi-function chip transmission branch 200 designed using the design method of the present invention can improve transmission efficiency by 2 to 3 percentage points compared to the traditional GaN RF front-end multi-function chip transmission branch 200.

[0048] Figure 4 This is a schematic diagram of the structure of another GaN RF front-end circuit provided by an embodiment of the present invention. Figure 4 :

[0049] In a possible implementation, the number of the first GaN power switch tubes 202 and the first series inductor 203 is the same and greater than 1; one end of each first series inductor 203 away from the GaN power amplifier is connected to a first GaN power switch tube 202 .

[0050] The first GaN power switch 202 and the first series inductor 203 form an LC matching branch. Each LC matching branch, running from the input end to the output end of the transmitting branch, includes, in sequence, a first series inductor 203 in series and a first GaN power switch 202 in a parallel branch. When the transmitting branch 200 is operating, the equivalent capacitance of each first GaN power switch 202 replaces the parallel branch capacitance in the LC impedance matching circuit to achieve impedance matching.

[0051] Each LC matching branch is connected in series. A plurality of LC matching branches can broaden the operating bandwidth of the transmitting branch. For example, the specific number of LC matching branches can be determined through simulation based on the operating bandwidth of the transmitting branch.

[0052] In a possible implementation, the number of the first GaN power switch tubes 202 is 2, and the number of the first series inductors 203 is 2.

[0053] Exemplarily, the source of the first GaN power switch tube 202 of each parallel branch is connected to the end of the corresponding first series inductor 203 away from the GaN power amplifier, and the drain is grounded.

[0054] In one possible implementation, the GaN RF front-end circuit is a RF front-end chip based on the MMIC process.

[0055] For example, a semiconductor process method is used on a semi-insulating semiconductor substrate to manufacture GaN power switch tubes, GaN power amplifiers 201 and other devices of a GaN RF front-end circuit, and connect them to form a RF front-end chip.

[0056] Exemplarily, impedance matching simulation is performed on a GaN RF front-end circuit to determine the inductance of first series inductor 203 and the equivalent capacitance of first GaN power switch 202. Based on the inductance of first series inductor 203 and the equivalent capacitance of first GaN power switch 202, structural simulation is performed to determine the dimensions of first series inductor 203 and first GaN power switch 202. Based on the MMIC process and the dimensions of first series inductor 203 and first GaN power switch 202, a GaN RF front-end circuit is fabricated.

[0057] In one possible implementation, the GaN RF front-end circuit is an RF front-end board-level circuit based on discrete devices.

[0058] Exemplarily, the inductance of first series inductor 203 is determined through impedance matching simulation based on the equivalent capacitance of the GaN RF front-end circuit and first GaN power switch tube 202. The GaN RF front-end circuit is assembled based on the board-level circuit assembly process, the inductance of first series inductor 203, and the equivalent capacitance of first GaN power switch tube 202.

[0059] Figure 5 This is a schematic diagram of the structure of the third GaN RF front-end circuit provided by an embodiment of the present invention. Figure 5 :

[0060] In one possible implementation, the receiving branch 300 includes a low-noise amplifier 301 and a second GaN power switch 302. The input of the receiving branch 300 is connected to the input of the low-noise amplifier 301. The source of the second GaN power switch 302 is connected between the input of the receiving branch 300 and the input of the low-noise amplifier 301, and the drain is grounded.

[0061] The receiving branch 300 is turned on and off by the second GaN power switch tube 302. The source of the second GaN power switch tube 302 is connected between the input end of the receiving branch 300 and the input end of the low-noise amplifier 301, and the drain is grounded. The gate of the second GaN power switch tube 302 is controlled by an external signal to turn the switch tube on and off. When the second GaN power switch tube 302 is turned on, that is, in the on state, the receiving branch 300 is in the off state because the drain is grounded. When the second GaN power switch tube 302 is turned off, that is, in the off state, the receiving branch 300 is in the on state, that is, in the working state. When the second GaN power switch tube 302 is in the off state, it is equivalent to the capacitor of the parallel branch being grounded. One end of the equivalent capacitor is connected between the input end of the receiving branch 300 and the input end of the low-noise amplifier 301, and the other end is grounded.

[0062] The equivalent capacitance of the second GaN power switch tube 302 pulls the input port impedance of the low-noise amplifier 301 , causing the input impedance matching of the low-noise amplifier 301 to deviate from the design, resulting in the power and efficiency of the receiving branch 300 deviating from the original design values.

[0063] Figure 6 This is a schematic diagram of the structure of the fourth GaN RF front-end circuit provided by an embodiment of the present invention. Figure 6 :

[0064] In one possible implementation, a second series inductor 303 is further provided between the input end of the receiving branch 300 and the input end of the low-noise amplifier 301. The second series inductor 303 and the equivalent capacitance of the second GaN power switch 302 are used to achieve impedance matching at the input end of the low-noise amplifier 301. The equivalent capacitance is the equivalent capacitance of the second GaN power switch 302 when it is in the off state.

[0065] The second series inductor 303 is disposed between the input of the receiving branch 300 and the input of the low-noise amplifier 301, and between the source of the second GaN power switch 302 and the input of the low-noise amplifier 301. When the second GaN power switch 302 is in the off state, the receiving branch 300 is in an operating state. The second series inductor 303 and the equivalent capacitance of the second GaN power switch 302 form an LC impedance matching circuit for achieving impedance matching at the input of the low-noise amplifier 301. When the second GaN power switch 302 is in the on state, the receiving branch 300 is in the off state and is not in operation.

[0066] The embodiment of the present invention realizes impedance matching of the input end of the low-noise amplifier 301 by forming an LC impedance matching circuit with the equivalent capacitance of the second series inductor 303 and the second GaN power switch tube 302 of the parallel branch in the off state. When the receiving branch 300 is working, the equivalent capacitance of the second GaN power switch tube 302 is used to replace the parallel branch capacitance in the existing LC impedance matching circuit to realize impedance matching. On the one hand, the influence of the GaN power switch tube on the input impedance matching of the low-noise amplifier 301 is avoided, and the power and efficiency of the receiving branch 300 of the GaN RF front-end circuit are prevented from deviating from the design value. On the other hand, the equivalent capacitance of the second GaN power switch tube 302 is used to replace the capacitance of the existing matching circuit, and the equivalent capacitance is used as part of the impedance matching circuit, which reduces the number of devices and reduces the volume of the GaN RF front-end circuit. When the receiving branch 300 is working, the second GaN power switch tube 302 plays both a switching role and an impedance matching role.

[0067] Figure 7 Schematic diagram of the structure of the fifth GaN RF front-end circuit provided by the embodiment of the present invention. Figure 7 :

[0068] In a possible implementation, a series capacitor 204 is further provided between the output end of the transmitting branch 200 and the output end of the GaN power amplifier 201 .

[0069] Exemplarily, one end of the series capacitor 204 is connected to the output end of the transmitting branch 200 and the source end of the first GaN power switch 202 , and the other end is connected to the output end of the GaN power amplifier 201 .

[0070] Exemplarily, the series capacitor 204 is disposed between the first series inductor 203 and the output terminal of the GaN power amplifier 201. The series inductor 204 functions as a DC isolation.

[0071] An embodiment of the present invention provides a TR component, including a GaN RF front-end circuit as in any possible implementation described above.

[0072] Exemplarily, the TR component includes a control circuit and a GaN RF front-end circuit. Exemplarily, the control circuit controls the gate of the GaN power switch tube to switch the operating states of the transmitting branch 200 and the receiving branch 300.

[0073] An embodiment of the present invention provides a method for preparing a GaN RF front-end circuit, which is applied to a GaN RF front-end circuit in any of the possible implementations described above, and the GaN RF front-end circuit is an RF front-end chip based on an MMIC process. The method includes:

[0074] The inductance value of the first series inductor 203 and the equivalent capacitance value of the first GaN power switch tube 202 are determined through impedance matching simulation based on the GaN radio frequency front-end circuit.

[0075] Based on the inductance of the first series inductor 203 and the equivalent capacitance of the first GaN power switch tube 202 , the sizes of the first series inductor 203 and the first GaN power switch tube 202 are determined through structural simulation.

[0076] Based on the MMIC process, the dimensions of the first series inductor 203 and the first GaN power switch tube 202 , a GaN radio frequency front-end circuit is prepared.

[0077] In the embodiment of the present invention, the inductance value and the equivalent capacitance value are first determined by impedance matching simulation, and then the structural simulation is performed based on the inductance value and the equivalent capacitance value to determine the structural dimensions of the first series inductor 203 and the first GaN power switch tube 202. Finally, the RF front-end chip is prepared based on the MMIC process.

[0078] An embodiment of the present invention provides a method for preparing a GaN RF front-end circuit, which is applied to a GaN RF front-end circuit in any of the possible implementations described above, and the GaN RF front-end circuit is a RF front-end board-level circuit based on discrete devices. The method includes:

[0079] The inductance value of the first series inductor 203 is determined by impedance matching simulation based on the equivalent capacitance value of the GaN RF front-end circuit and the first GaN power switch tube 202 .

[0080] Based on the board-level circuit assembly process, the inductance value of the first series inductor 203 and the equivalent capacitance value of the first GaN power switch tube 202, a GaN radio frequency front-end circuit is assembled.

[0081] In this embodiment of the present invention, the inductance value is first determined through impedance matching simulation. A corresponding first series inductor 203 is then selected based on the inductance value. The GaN RF front-end circuit is assembled using a board-level circuit assembly process. This embodiment of the present invention is applicable when the equivalent capacitance of a standalone GaN power switch cannot be changed.

[0082] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims

1. A GaN radio frequency front-end circuit, characterized in that: include: Transceiver ports, transmitting branches and receiving branches; The transceiver port is connected to the output end of the transmitting branch and the input end of the receiving branch, wherein the transceiver port is also used to connect to the transceiver antenna; The transmitting branch includes a GaN power amplifier and a first GaN power switch tube; The output end of the transmitting branch is connected to the output end of the GaN power amplifier; The source of the first GaN power switch tube is connected between the output end of the emission branch and the output end of the GaN power amplifier, and the drain is grounded; A first series inductor is further provided between the output end of the transmitting branch and the output end of the GaN power amplifier; The first series inductor and the equivalent capacitance of the first GaN power switch tube are used to form an LC impedance matching circuit to achieve impedance matching at the output end of the GaN power amplifier, wherein the equivalent capacitance is the equivalent capacitance of the first GaN power switch tube when it is in the off state.

2. The GaN RF front-end circuit according to claim 1, wherein: The number of the first GaN power switch tubes is the same as the number of the first series inductors, and the number is greater than 1; and one end of each first series inductor away from the GaN power amplifier is connected to a first GaN power switch tube.

3. The GaN RF front-end circuit according to claim 2, wherein: The number of the first GaN power switch tubes is 2, and the number of the first series inductors is 2.

4. The GaN RF front-end circuit according to claim 1, wherein: The GaN RF front-end circuit is a RF front-end chip based on the MMIC process.

5. The GaN RF front-end circuit according to claim 1, wherein: The GaN RF front-end circuit is a RF front-end board-level circuit based on discrete devices.

6. The GaN RF front-end circuit according to claim 1, wherein: The receiving branch includes a low noise amplifier and a second GaN power switch tube; The input end of the receiving branch is connected to the input end of the low noise amplifier; The source of the second GaN power switch tube is connected between the input end of the receiving branch and the input end of the low noise amplifier, and the drain is grounded.

7. The GaN RF front-end circuit according to claim 6, wherein: A second series inductor is further provided between the input end of the receiving branch and the input end of the low noise amplifier; The second series inductor and the equivalent capacitance of the second GaN power switch tube are used to achieve impedance matching at the input end of the low-noise amplifier, wherein the equivalent capacitance is the equivalent capacitance of the second GaN power switch tube in the off state.

8. A TR component, characterized in that: A GaN RF front-end circuit comprising any one of claims 1 to 7.

9. A method for preparing a GaN radio frequency front-end circuit, characterized in that: Applicable to the GaN RF front-end circuit as claimed in claim 1; The GaN RF front-end circuit is a RF front-end chip based on the MMIC process; the method includes: Determining the inductance value of the first series inductor and the equivalent capacitance value of the first GaN power switch tube through impedance matching simulation based on the GaN RF front-end circuit; Determining the sizes of the first series inductor and the first GaN power switch tube through structural simulation based on the inductance value of the first series inductor and the equivalent capacitance value of the first GaN power switch tube; Based on the MMIC process, the dimensions of the first series inductor and the first GaN power switch tube, a GaN radio frequency front-end circuit is prepared.

10. A method for preparing a GaN radio frequency front-end circuit, characterized in that: Applicable to the GaN RF front-end circuit as claimed in claim 1; The GaN RF front-end circuit is a RF front-end board-level circuit based on discrete devices; the method includes: Determining the inductance value of the first series inductor through impedance matching simulation based on the equivalent capacitance value of the GaN RF front-end circuit and the first GaN power switch tube; Based on the board-level circuit assembly process, the inductance value of the first series inductor and the equivalent capacitance value of the first GaN power switch tube, a GaN RF front-end circuit is assembled.

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