OLED display panel and preparation method thereof

Abstract

The application relates to an OLED display panel and a preparation method thereof. The preparation method of the OLED display panel comprises the following steps: forming patterns of an anode layer and patterns of pixel defining walls; forming patterns of a hole injection layer; forming patterns of a hole transport layer; forming an integral layer pattern of a light-emitting layer, and forming a plurality of independent light-emitting unit areas through a patterning process, each of the light-emitting unit areas being formed in a pixel area defined by the pixel defining walls. When forming a final pattern of the light-emitting layer, the integral layer pattern of the light-emitting layer is first formed, and then the patterning process is used to form the light-emitting unit areas in the pixel areas respectively. The light emitted by the light-emitting unit areas is directly transmitted or irradiated on a quantum dot layer to generate light of other colors for display. The application does not need to rely on FMM, can reduce the process cost and the process difficulty, and is not limited by the size of FMM, and is suitable for generating large-size OLED display panels.

Description

Technical Field

[0001] This invention relates to the field of display technology, and more particularly to an OLED display panel and its manufacturing method. Background Technology

[0002] OLED display panels are widely used in various display products such as mobile phones, monitors, and televisions due to their technological advantages such as self-emissiveness, thinness, and high contrast. Current OLED technology can achieve an NTSC color gamut greater than 100%, while quantum dots (QDs), due to their narrow emission spectrum and high color purity, can achieve ultra-high color saturation (NTSC > 120%). Combining OLED and QD technologies can achieve better display effects. Currently, display products combining OLED and QD technologies work by using blue light emitted from a blue organic light-emitting layer (EML-Blue) to excite red and green quantum dot layers. This technology requires a high-precision metal mask (FMM) during the deposition of the organic light-emitting layer to form pixel light-emitting units. During deposition, the mask requires very high alignment accuracy, resulting in a relatively low success rate and a tendency for alignment deviations. Furthermore, FMMs also limit the scaling up of OLEDs. Summary of the Invention

[0003] This invention provides an OLED display panel and its fabrication method, thereby solving the technical problems in the prior art where the high-precision metal mask (FMM) used to fabricate OLED display panels is costly, requires high alignment accuracy, and is unsuitable for fabricating large-size OLED display panels due to size limitations.

[0004] The method for preparing an OLED display panel provided by the present invention includes:

[0005] Step S1: On a substrate on which thin-film transistors have been formed and which has a flat surface, a pattern of an anode layer and a pattern of a pixel-defining barrier are formed.

[0006] Step S2: Form the pattern of the hole injection layer;

[0007] Step S3: Form the pattern of the hole transport layer;

[0008] Step S4: Form the entire pattern of the light-emitting layer, and process the entire pattern of the light-emitting layer into multiple independent light-emitting unit areas through a patterning process. Each light-emitting unit area is formed within the pixel area defined by the pixel boundary barrier.

[0009] In step S2, the complete pattern of the hole injection layer is formed; in step S3, the complete pattern of the hole transport layer is formed.

[0010] Step S4 includes the following steps S41 to S42:

[0011] Step S41: Form the complete pattern of the light-emitting layer;

[0012] Step S42: Through patterning process, the entire pattern of the light-emitting layer is processed into multiple independent light-emitting unit areas, and each light-emitting unit area is formed in the pixel area defined by the pixel boundary barrier.

[0013] The method for manufacturing the OLED display panel further includes the following steps S5 to S7:

[0014] Step S5: Form the complete pattern of the electron transport layer;

[0015] Step S6: Form the complete pattern of the first cathode layer;

[0016] Step S7: Form the pattern of the first encapsulation layer;

[0017] Steps S5 to S7 are performed after step S41 and before step S42.

[0018] In step S42, during the patterning process, a semi-transparent mask is used for exposure, and a first via and a second via are formed sequentially by etching. The first via is located in the area corresponding to the pixel boundary barrier and penetrates the first encapsulation layer, the first cathode layer, the electron transport layer, the light-emitting layer, the hole transport layer, and the hole injection layer. The second via is located in the pixel area defined by the pixel boundary barrier and penetrates the first encapsulation layer.

[0019] The method for manufacturing the OLED display panel further includes:

[0020] Step S8: Form the pattern of the second cathode layer, which is connected to the first cathode layer at the second via.

[0021] The method for manufacturing the OLED display panel further includes:

[0022] Step S9: Form the pattern of the second encapsulation layer.

[0023] In step S42, the multiple independent light-emitting unit regions formed emit light of the first color, and the multiple light-emitting unit regions are divided into a first group and n second groups, where n≥1 and n is an integer;

[0024] The method for manufacturing the OLED display panel further includes:

[0025] Step S10: Prepare a pattern for forming a quantum dot layer. The pattern of the quantum dot layer includes quantum dot patterns of n colors. Each color of quantum dot pattern corresponds to a second set of light-emitting unit regions and is formed in the region corresponding to the second set of light-emitting unit regions.

[0026] The method for manufacturing the OLED display panel further includes:

[0027] Step S11: Form a pattern of a scattering layer, wherein the scattering layer is formed in the region corresponding to the first group of light-emitting unit regions.

[0028] The method for manufacturing the OLED display panel further includes:

[0029] Step S12: Forming a pattern for a third encapsulation layer, the pattern of which covers the quantum dot layer.

[0030] The OLED display panel provided by the present invention is prepared according to the above-described method for preparing an OLED display panel.

[0031] The OLED display panel and its preparation method provided by this invention have the following advantages compared with the prior art:

[0032] The OLED display panel fabrication method provided by this invention involves first forming the entire pattern of the light-emitting layer through methods such as vapor deposition, and then forming light-emitting unit areas in each pixel region according to the entire pattern of the light-emitting layer using a patterning process. The light emitted by these light-emitting unit areas can either be directly transmitted or irradiate the quantum dot layer to generate other colors of light for display. Compared to existing technologies, in the embodiments of this invention, a high-precision metal mask (FMM) is not required, which reduces process costs and alignment requirements, lowering the process difficulty. Furthermore, it is not limited by the size of the high-precision metal mask (FMM), making it suitable for producing large-size OLED display panels.

[0033] The OLED display panel provided by the present invention is prepared according to the above-described OLED display panel preparation method, and naturally has the same beneficial effects as the above-described OLED display panel, which will not be described in detail here. Attached Figure Description

[0034] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0035] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 This is a schematic flowchart of the OLED display panel fabrication method in an embodiment of the present invention;

[0037] Figure 2 This is a schematic diagram of the structure of the OLED display panel in an embodiment of the present invention;

[0038] Figure 3 This is a schematic diagram showing the sequential formation of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, a first cathode layer, and a first encapsulation layer (the pixel boundary barrier is not shown; each of the above structures protrudes at the pixel boundary barrier).

[0039] Figure 4 To Figure 3 The diagram shows the structure after being coated with photoresist and exposed (the pixel boundary barrier is not shown, and each structure is shown as a plane at the pixel boundary barrier, but actually protrudes).

[0040] Figure 5 To Figure 4 A schematic diagram of the structure after etching (the gap in the middle is a pixel-defining barrier, not shown);

[0041] Figure 6 To Figure 4 A schematic diagram of the structure after ashing.

[0042] Figure 7 To Figure 6 A schematic diagram of the structure after etching.

[0043] Figure 8 A schematic diagram of the structure for removing the remaining photoresist;

[0044] Figure 9 A schematic diagram of the structure for forming the second cathode layer (from...) Figure 9 (The pixel-bound barrier is shown at the beginning);

[0045] Figure 10 A schematic diagram of the structure forming the second encapsulation layer;

[0046] Figure 11 A schematic diagram of the overall structure of the OLED display panel after the second encapsulation layer is formed;

[0047] Figure 12 A schematic diagram of the structure for forming a quantum dot layer.

[0048] In the picture:

[0049] 10-Substrate; 11-Thin film transistor; 12-Planarization layer; 13-Anode layer; 14-Pixel boundary barrier; 15-Hole injection layer; 16-Hole transport layer; 17-Light emission layer; 18-Electron transport layer; 19-First cathode layer; 110-First encapsulation layer; 111-Second cathode layer; 112-Second encapsulation layer; 113-Quantum dot layer; 1131, 1132-Quantum dot pattern; 1133-Quantum dot barrier; 114-Scattering layer; 115-Third encapsulation layer; 116-Photoresist. Detailed Implementation

[0050] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0051] The embodiments of the OLED display panel and its manufacturing method provided by the present invention will be described below with reference to the accompanying drawings.

[0052] In one embodiment of the method for manufacturing the OLED display panel of the present invention, such as Figure 1 As shown, the method for manufacturing an OLED display panel includes the following steps S1 to S12, and the OLED display panel formed according to these steps is as follows: Figure 2 As shown.

[0053] Step S1: On a substrate on which thin-film transistors have already been formed and which has a flat surface, a pattern of an anode layer 13 and a pattern of a pixel-defining barrier 14 are formed, as shown below. Figure 3 As shown.

[0054] In step S1, the pattern of the anode layer 13 is first formed on the substrate 10, and the substrate 10 has a thin-film transistor (TFT) 11 for driving the OLED and a planarization layer 12 for constructing a plane above the TFT 11 pre-formed on the substrate 10. The specific method and process for forming the pattern of the anode layer 13 are known to those skilled in the art and will not be described in detail.

[0055] In addition, before or after the patterning of the anode layer 13, a pixel defining barrier 14 is formed on the substrate 10. The pixel defining barrier 14 is used to define pixel regions on the substrate 10. Each defined pixel region is used to emit light through the subsequently formed OLED structure to achieve display.

[0056] Step S2, forming the pattern of hole injection layer 15, as shown. Figure 3 As shown.

[0057] In step S2, the hole injection layer 15 can be patterned using methods such as vapor deposition. The method for forming the hole injection layer by vapor deposition is known in existing technology and will not be described in detail here. However, it should be noted that in step S2, only the overall pattern of the hole injection layer 15 is initially formed (without etching or patterning). Etching and patterning of the hole injection layer 15 can be performed concurrently with the formation of other structures, which reduces the number of etching and patterning operations, simplifies the process, reduces costs, and improves efficiency.

[0058] Step S3, forming the pattern of hole transport layer 16, as shown below. Figure 3 As shown.

[0059] In step S3, the hole transport layer 16 can be patterned using methods such as vapor deposition. The method for forming the hole transport layer by vapor deposition is known in existing technology and will not be described in detail here. However, it should be noted that in step S3, only the overall pattern of the hole transport layer 16 is initially formed (without etching or patterning). The etching and patterning of the hole transport layer 16 can be performed simultaneously with the aforementioned hole injection layer 15 and other subsequently formed structures. This reduces the number of etching and patterning operations, simplifies the process, reduces costs, and improves efficiency.

[0060] Step S4: Form the entire pattern of the light-emitting layer 17, and through a patterning process, process the entire pattern of the light-emitting layer 17 into multiple independent light-emitting unit areas. Each light-emitting unit area is formed within a pixel area defined by a pixel boundary barrier, such as... Figure 3 As shown.

[0061] Step S4 can be broken down into two steps, namely, steps S41 and S42 as follows:

[0062] Step S41: Form the complete pattern of the light-emitting layer 17.

[0063] In step S42, the entire pattern of the light-emitting layer 17 is processed into multiple independent light-emitting unit areas through a patterning process, and each light-emitting unit area is formed within a pixel area defined by a pixel boundary barrier.

[0064] In step S41, the pattern of the light-emitting layer 17 can be formed by means of vapor deposition or similar methods. The method of forming the light-emitting layer by vapor deposition is known in the prior art and will not be described in detail here. However, it should be noted that the overall pattern of the light-emitting layer 17 formed in step S41 is not the final pattern of the light-emitting layer 17. The overall pattern of the light-emitting layer 17 means that a layer of material for the light-emitting layer 17 is covered on the hole transport layer 16, but etching and patterning are not performed in step S41, and the final pattern of the light-emitting layer 17 is not directly formed.

[0065] In step S41, the formed light-emitting layer 17 can be a blue light-emitting layer. According to current technology, blue organic light-emitting materials have better light-emitting performance compared to other colored light-emitting materials, such as red and green. When it is necessary to display other colors of light, quantum dots can be excited by blue light to generate other colors of light, such as red or green light.

[0066] In this embodiment, the method for preparing the OLED display panel further includes the following steps S5 to S7 performed after step S41 and before step S42.

[0067] Step S5, forming the complete pattern of electron transport layer 18, as shown below. Figure 3 As shown.

[0068] In step S5, the electron transport layer 18 can be patterned using methods such as vapor deposition. The pattern of the electron transport layer 18 formed in step S5 is not the final pattern of the electron transport layer 18; it means that a layer of electron transport layer 18 material is covered on the light-emitting layer 17, but etching and patterning are not performed in step S5. The etching and patterning of the electron transport layer 18 are performed in subsequent steps, along with the previously formed light-emitting layer 17 and other subsequently formed structures. This reduces the number of etching and patterning operations, simplifies the process, reduces costs, and improves efficiency.

[0069] Step S6, forming the complete pattern of the first cathode 19, as shown below. Figure 3 As shown.

[0070] In step S6, the pattern of the first cathode layer 19 can be formed by methods such as vapor deposition. The pattern of the first cathode layer 19 formed in step S6 is not the final pattern of the first cathode layer 19; it means that a layer of cathode material is covered on the electron transport layer 18, but etching and patterning are not performed in step S6. The etching and patterning of the first cathode layer 19 are performed in subsequent steps, along with the previously formed light-emitting layer 17, electron transport layer 18, and other subsequently formed structures. This reduces the number of etching and patterning operations, simplifies the process, reduces costs, and improves efficiency.

[0071] Step S7, forming the pattern of the first encapsulation layer 110, as shown below. Figure 3 As shown.

[0072] In step S7, a first encapsulation layer 110 can be formed above the first cathode 19 by deposition or other methods. The specific formation method and process are known in the prior art and will not be described in detail here. The first encapsulation layer 110 formed in step S7 can protect the underlying anode layer 13, hole injection layer 15, hole transport layer 16, light-emitting layer 17, electron transport layer 18, and other structures, preventing these structures from coming into contact with water and oxygen in the air and causing damage.

[0073] In step S42, the entire pattern of the light-emitting layer 17 is processed into multiple independent light-emitting unit areas through a patterning process, and each light-emitting unit area is formed within a pixel area defined by a pixel boundary barrier.

[0074] In step S42, the multiple independent light-emitting unit regions all emit light of a first color (mainly achieved by forming a single light-emitting layer 17 in step S41, covering each pixel region with the same light-emitting material). The multiple light-emitting unit regions are divided into a first group and n second groups, where n ≥ 1 and n is an integer. The first color light emitted by the first group of light-emitting unit regions is directly transmitted through the fabricated OLED display panel, while the first color light emitted by the second group of light-emitting unit regions is used to illuminate the subsequently formed quantum dot layer 113, where the quantum dot patterns in the quantum dot layer 113 are excited into other colors of light.

[0075] In this embodiment, in step S42, a patterning process is performed on the light-emitting layer 17, the electron transport layer 18 and the first cathode layer 19 formed above the light-emitting layer 17, and the hole injection layer 15 and the hole transport layer 16 formed below the light-emitting layer 17. The specific process can be as follows:

[0076] First, a layer of photoresist 116 is coated on top of the first encapsulation layer 110. Specifically, the photoresist 116 can be selected as a positive photoresist that reacts in the 365nm wavelength band.

[0077] Subsequently, a half-tone mask (or semi-transparent mask) is used for exposure. The structure formed after exposure and development is as follows: Figure 4 As shown, in the area corresponding to the pixel boundary barrier 14, the photoresist 116 is completely removed; in the pixel area defined by the pixel boundary barrier 14, a portion of the photoresist 116 is removed, resulting in a thinner thickness; while in other areas, the photoresist 116 maintains its initial thickness.

[0078] Subsequently, an etching process is performed to etch a first via in the area corresponding to the pixel boundary barrier 14, such as... Figure 5 As shown, the first via is located in the region corresponding to the pixel boundary barrier 14. The first via penetrates the first encapsulation layer 110, the first cathode layer 19, the electron transport layer 18, the light-emitting layer 17, the hole transport layer 16, and the hole injection layer 15. That is, in the region where the pixel boundary barrier 14 is located, by etching the first via, the first encapsulation layer 110, the first cathode layer 19, the electron transport layer 18, the light-emitting layer 17, the hole transport layer 16, and the hole injection layer 15 formed on the pixel boundary barrier 14 are actually etched away, exposing the pixel boundary barrier 14. In this etching process, reactive ion etching (RIE) can be selected to avoid wet etching, thus preventing the OLED structure from coming into contact with water, oxygen, etc.

[0079] Subsequently, the photoresist is thinned using an ashing process, resulting in a structure as follows: Figure 6 As shown, in the pixel area defined by the pixel delimiting barrier 14, the photoresist 116 is completely removed, exposing the first encapsulation layer 110 located below.

[0080] Subsequently, an etching process is performed again to etch the second via in the area corresponding to the pixel-defined barrier 14, such as... Figure 7 As shown, the second via is located in the pixel area defined by the pixel defining barrier 14. The second via penetrates the first encapsulation layer 110, exposing the first cathode 19 located below. The etching process is also selected as reactive ion etching (RIE).

[0081] Finally, the remaining photoresist is removed. After removal, the entire area of ​​the first encapsulation layer 110 is no longer obscured, such as... Figure 8 As shown.

[0082] Step S8: Form the pattern of the second cathode 111. The second cathode 111 is connected to the first cathode 19 at the second via, as shown below. Figure 9 As shown.

[0083] In step S8, a cathode material is deposited onto the exposed first encapsulation layer 110 by means of vapor deposition or other methods to form the pattern of the second cathode 111. The formed second cathode 111 is connected to the first cathode 19 at the second via, that is, within the pixel area. After being connected, the second cathode 111 and the first cathode 19 actually function as a whole, jointly playing the role of the cathode in the OLED structure.

[0084] Step S9, forming the pattern of the second encapsulation layer 112, as shown below. Figure 10 As shown.

[0085] In step S9, the pattern of the second encapsulation layer 112 can be formed by means of vapor deposition or similar methods. The material of the formed second encapsulation layer 112 can be the same as that of the first encapsulation layer 110. The second encapsulation layer 112 also serves to protect the OLED structure.

[0086] Step S10: Prepare the pattern for forming the quantum dot layer 113, as shown below. Figure 11 and Figure 12 As shown, the pattern of quantum dot layer 113 includes quantum dot patterns of n colors, each color of quantum dot pattern corresponds to a second set of light-emitting unit regions, and is formed in the region corresponding to the second set of light-emitting unit regions.

[0087] In step S10, taking the quantum dot layer 113 as an example, which includes quantum dot patterns of two colors, quantum dot pattern 1131 and quantum dot pattern 1132, respectively, quantum dot pattern 1131 is red and quantum dot pattern 1132 is green. Quantum dot patterns 1131 and 1132 are formed in regions corresponding to a portion of the light-emitting unit region (a second group of light-emitting unit regions). When the blue light emitted by these light-emitting unit regions illuminates quantum dot patterns 1131 and 1132, it excites red and green light, respectively. In addition, the blue light emitted by the first group of light-emitting unit regions can be directly transmitted and mixed with the aforementioned red and green light to display various colors.

[0088] In step S10, a quantum dot barrier 1133 can also be formed in the area corresponding to the pixel boundary barrier 14. Specifically, the quantum dot barrier 1133 can be black or gray quantum dots. Like the pixel boundary barrier 14, the quantum dot barrier 1133 serves to isolate adjacent pixel areas. The formation of the quantum dot barrier 1133 can be performed before the formation of quantum dot patterns 1131 and 1132, etc.

[0089] Step S11: Form the pattern of the scattering layer 114. The scattering layer 114 is formed in the region corresponding to the first group of light-emitting unit regions, such as... Figure 11 and Figure 12As shown.

[0090] In step S11, by forming a scattering layer 114, the blue light emitted from the first group of light-emitting unit areas is fully reflected by the heat dissipation layer 114 when it passes through, which can obtain a better field of view effect, and can match the blue light with the red light excited by the quantum dot pattern 1131 and the green light excited by the quantum dot pattern 1132 (the light has a scattering phenomenon at the quantum dot patterns 1131 and 1132) to obtain a better display effect.

[0091] In the actual implementation of the present invention, step S11 can be performed after step S10 or before step S10. That is, in this embodiment, the step of forming the scattering layer 114 is referred to as step S11, and the step of forming the quantum dot layer 113 is referred to as step S10. This is only for convenience of description and is not a limitation on the order of process steps.

[0092] Step S12: Forming the pattern of the third encapsulation layer 115, the pattern of the third encapsulation layer 115 covering the quantum dot layer 113, as shown. Figure 2 As shown.

[0093] In step S12, the third encapsulation layer 115 is formed to protect the quantum dot layer 113. Specifically, the third encapsulation layer 115 may include a two-layer structure, namely Al2O3 and SiNx. Specifically, an Al2O3 layer can first be formed by atomic force deposition (ALD), and then SiNx can be deposited on the Al2O3 by chemical vapor deposition, thereby forming an Al2O3 / SiNx stacked composite structure. This stacked composite structure can effectively protect the quantum dot layer 113.

[0094] In the above embodiments, the hole injection layer 15, hole transport layer 16, light-emitting layer 17, electron transport layer 18, and first cathode layer 19 are formed through a single patterning process (using a half-tone mask). However, the present invention is not limited thereto. In other embodiments of the OLED display panel fabrication method, the hole injection layer 15, hole transport layer 16, light-emitting layer 17, electron transport layer 18, and first cathode layer 19 can each form their final graphic structure through a separate patterning process, without being patterned together with other layer structures.

[0095] In the above embodiment, the light-emitting layer 17 emits light of one color in the light-emitting unit areas of each pixel region, and further excites other colors of light through the quantum dot pattern in the quantum dot layer 113, which are used together for display. However, the present invention is not limited to this. In other embodiments of the OLED display panel fabrication method, patterns of multiple light-emitting layers can be formed. After patterning, the patterns of these multiple light-emitting layers form light-emitting unit areas emitting different colors in different pixel regions. For example, light-emitting unit areas emitting blue, green, and red can be formed in each pixel region. The light emitted by these light-emitting unit areas can be directly mixed and displayed as various colors. In this embodiment, it is not necessary to form structures such as the quantum dot layer 113.

[0096] In summary, the OLED display panel fabrication method provided in the above embodiments of the present invention, when forming the final pattern of the light-emitting layer 17, first forms the entire pattern of the light-emitting layer 17 by means of evaporation or other methods, and then forms light-emitting unit areas in each pixel area according to the entire pattern of the light-emitting layer 17 through a patterning process. The light emitted by these light-emitting unit areas can either be directly transmitted or irradiated onto the quantum dot layer 113 to generate light of other colors for display. Compared with the prior art, in the present invention, there is no need to rely on a high-precision metal mask (FMM), which can reduce the process cost, reduce the alignment requirements, and reduce the process difficulty; and it is also not limited by the size of the high-precision metal mask (FMM), making it suitable for producing large-size OLED display panels.

[0097] In one embodiment of the OLED display panel provided by the present invention, the OLED display panel is prepared according to the OLED display panel preparation method described in the above embodiments, and its structure is specifically as follows: Figure 2 As shown.

[0098] In this embodiment, the OLED display panel includes an anode layer 13, a hole injection layer 15, a hole transport layer 16, a light-emitting layer 17, an electron transport layer 18, a first cathode 19 and a second cathode 111 connected by vias, and a quantum dot layer 113. It emits light of various colors mainly through the above-mentioned OLED structure and quantum dot structure for display.

[0099] The OLED display panel provided by the present invention is prepared according to the above-described OLED display panel preparation method, and naturally has the same beneficial effects as the above-described OLED display panel preparation method, which will not be described again.

[0100] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0101] The above description is merely a specific embodiment of the present invention, enabling those skilled in the art to understand or implement the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A method for manufacturing an OLED display panel, characterized in that, The method for manufacturing the OLED display panel includes: Step S1: On a substrate on which thin-film transistors have been formed and which has a flat surface, a pattern of an anode layer and a pattern of a pixel-defining barrier are formed. Step S2: Form the complete pattern of the hole injection layer; Step S3: Form the complete pattern of the hole transport layer; Step S4 involves forming a complete pattern of the light-emitting layer and processing it into multiple independent light-emitting unit areas using a patterning process. Each light-emitting unit area is formed within a pixel area defined by a pixel boundary barrier. Step S4 includes the following steps S41-S42: Step S41: Form the complete pattern of the light-emitting layer; Step S42: Through patterning process, the entire pattern of the light-emitting layer is processed into multiple independent light-emitting unit areas, and each light-emitting unit area is formed in the pixel area defined by the pixel boundary barrier. The method for manufacturing the OLED display panel further includes the following steps S5 to S7: Step S5: Form the complete pattern of the electron transport layer; Step S6: Form the complete pattern of the first cathode layer; Step S7: Form the pattern of the first encapsulation layer; Steps S5 to S7 are performed after step S41 and before step S42; In step S42, during the patterning process, a semi-transparent mask is used for exposure, and a first via and a second via are formed sequentially by etching. The first via is located in the area corresponding to the pixel boundary barrier and penetrates the first encapsulation layer, the first cathode layer, the electron transport layer, the light-emitting layer, the hole transport layer, and the hole injection layer. The second via is located in the pixel area defined by the pixel boundary barrier and penetrates the first encapsulation layer.

2. The method for preparing an OLED display panel according to claim 1, characterized in that, The method for manufacturing the OLED display panel further includes: Step S8: Form the pattern of the second cathode layer, which is connected to the first cathode layer at the second via.

3. The method for preparing an OLED display panel according to claim 2, characterized in that, The method for manufacturing the OLED display panel further includes: Step S9: Form the pattern of the second encapsulation layer.

4. The method for preparing an OLED display panel according to claim 3, characterized in that, The multiple independent light-emitting unit regions formed in step S42 all emit light of the first color, and the multiple light-emitting unit regions are divided into a first group and n second groups, where n≥1 and n is an integer; The method for manufacturing the OLED display panel further includes: Step S10: Prepare a pattern for forming a quantum dot layer. The pattern of the quantum dot layer includes quantum dot patterns of n colors. Each color of quantum dot pattern corresponds to a second set of light-emitting unit regions and is formed in the region corresponding to the second set of light-emitting unit regions.

5. The method for preparing an OLED display panel according to claim 4, characterized in that, The method for manufacturing the OLED display panel further includes: Step S11: Form a pattern of a scattering layer, wherein the scattering layer is formed in the region corresponding to the first group of light-emitting unit regions.

6. The method for preparing an OLED display panel according to claim 5, characterized in that, The method for manufacturing the OLED display panel further includes: Step S12: Forming a pattern for a third encapsulation layer, the pattern of which covers the quantum dot layer.

7. An OLED display panel, characterized in that, The OLED display panel is prepared by the method for preparing an OLED display panel according to any one of claims 1 to 6.

Images