Forming mesas on electrostatic chucks

Abstract

A body of an electrostatic chuck includes a mesa disposed on a polished surface of the body. Each mesa includes an adhesion layer disposed on the polished surface of the body, a transition layer disposed over the adhesion layer, and a coating layer disposed over the transition layer. The coating layer has a hardness of at least 14 GPa. The body further includes a sidewall coating disposed over sidewalls of the body. A method of making the body includes polishing a surface of the body and cleaning the polished surface. The method further includes depositing the mesa by depositing an adhesion layer on the body, depositing a transition layer over the adhesion layer, and depositing a coating layer over the transition layer. In addition, the method includes polishing the mesa.

Description

background Technical Field

[0002] The embodiments described herein generally relate to the manufacture of articles used in semiconductor device manufacturing processes, and more specifically, to a method for manufacturing an electrostatic chuck (ESC) for use in a handling chamber. Background Technology

[0004] Electrostatic chucks (ESCs) are used in semiconductor manufacturing to hold substrates securely in place within the processing volume of a processing chamber. For example, adsorption electrodes or chucks within the ESC are driven at one or more voltages to generate an adsorption force that holds the substrate to the surface of the ESC. The adsorption force is a function of the potential between the voltage applied to the adsorption electrodes and the substrate.

[0005] The body of an ESC includes mesa that support the substrate during processing. Mesa (e.g., protrusions) create a distance between the body surface and the substrate surface to allow back gas to flow between the ESC surface and the substrate. The back gas controls the thermal conductivity between the ESC and the substrate. Over time, the mesa wears down. As the mesa wears, the distance between the substrate and the ESC surface decreases. Furthermore, the mesa may exhibit uneven wear, with one or more mesa exhibiting more wear than another. Therefore, the adsorption force applied to the substrate may vary from substrate to substrate and / or across the substrate surface. Additionally, the temperature of the substrate may vary from substrate to substrate and / or across the substrate surface. These variations in adsorption force and / or temperature can lead to defects in the processed substrate and the corresponding semiconductor device. Defective substrates are discarded, increasing the manufacturing cost of the semiconductor device by reducing the throughput of the processing chamber. Wear-out ESCs can be replaced with new or refurbished ESCs. However, when an ESC is replaced, the corresponding processing chamber goes offline, which reduces the throughput of the processing chamber and increases the cost associated with manufacturing semiconductor devices.

[0006] The standard refurbishment process involves removing 5-50 micrometers of dielectric material from the mesa and ESC surface and recreating the mesa. However, this process makes the dielectric material of the ESC thinner and can only be done a few times. When the dielectric material becomes too thin, high-voltage punch-through occurs, and the ESC is discarded, requiring the purchase of an expensive new ESC.

[0007] Therefore, there is a need in the art for an improved method of forming mesa that exhibits less wear on the substrate during processing, in order to increase production yield and reduce the production cost of processing chambers. Summary of the Invention

[0008] In one example, a method for fabricating a body for an electrostatic chuck includes the steps of polishing a surface of the body and cleaning the polished surface of the body. The method further includes the step of depositing a first mesa on the polished surface of the body. The step of depositing the first mesa further includes the steps of depositing an adhesion layer on the polished surface of the body, depositing a transition layer over the adhesion layer, and depositing a coating layer over the transition layer. The coating layer has a hardness of at least 14 GPa. The method further includes the step of polishing the first mesa to smooth its surface.

[0009] In another example, the body of the electrostatic chuck includes a platform disposed on a polished surface of the body. Each platform includes an adhesive layer disposed on the polished surface of the body, a transition layer disposed above the adhesive layer, and a coating layer disposed above the transition layer. The coating layer has a hardness of at least 14 GPa. The body further includes a sidewall coating disposed above the sidewalls of the body.

[0010] In another example, the electrostatic chuck includes a body and a base. The body includes platforms disposed on a polished surface of the body. Each platform includes an adhesive layer disposed on the polished surface of the body, a transition layer disposed above the adhesive layer, and a coating layer disposed above the transition layer. The coating layer has a hardness of at least 14 GPa. The base further includes a sidewall coating disposed above the sidewalls of the body. The base is attached to the body. Attached Figure Description

[0011] To gain a more detailed understanding of the features of this disclosure described above, a more specific description of the disclosure, which has been briefly summarized above, can be obtained by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only typical embodiments of this disclosure and should therefore not be considered as limiting its scope, as this disclosure allows for other equally effective embodiments.

[0012] Figure 1 This is a top view of an electrostatic chuck according to one or more embodiments.

[0013] Figure 2 This is a side view of an electrostatic chuck according to one or more embodiments.

[0014] Figure 3 This is a side view of a processing chamber according to one or more embodiments.

[0015] Figure 4A It is a top view of the mask and mounting ring according to one or more embodiments.

[0016] Figure 4B It is a side view of the mask, mounting ring, and electrostatic chuck according to one or more embodiments.

[0017] Figure 5 It is a side view of a portion of a mask according to one or more embodiments.

[0018] Figure 6 This is a flowchart of a method for forming a platform on an electrostatic chuck according to one or more embodiments.

[0019] Figure 7 This is a flowchart of a method for refurbishing an electrostatic chuck according to one or more embodiments. Detailed Implementation

[0020] The embodiments described herein generally relate to the manufacture and / or refurbishment of electrostatic chucks (ESCs). When processing a substrate, the ESC supports the substrate within a semiconductor processing chamber.

[0021] Traditionally, a negative mask (or sandblasting) process is used to form the patterned surface of an ESC. In a negative mask process, the surface of the ESC is sandblasted through openings in a patterned mask to create elevated features and recessed areas on the ESC surface. Elevated features have noticeably sharp edges, which need to be rounded and / or deburred before mounting the substrate support in the processing chamber. Furthermore, the material used to construct the elevated features is prone to wear, making the corresponding ESC to be removed from the processing chamber require refurbishment. Additionally, since the elevated features are created by sandblasting, material is removed from the ESC surface to form the elevated features and recessed areas. However, over time, the surface of the ESC may wear down to the point where it can no longer support the sandblasting used to form the elevated features and recessed areas. This ESC may not be refurbished and is discarded. Refurbishing ESCs increases downtime in the processing chamber, while discarding ESCs increases the operating costs of the processing chamber, thereby increasing the cost of manufacturing the corresponding semiconductor device.

[0022] The following describes an improved ESC and a method for forming elevated features to increase the ESC's operating time (e.g., the amount of time between ESC refurbishments) and the number of times the ESC can be refurbished. For example, elevated features are formed by a deposition process, and these elevated features have increased hardness compared to other ESCs. Therefore, the improved ESC reduces the operating costs of the processing chamber by reducing downtime and the number of discarded ESCs.

[0023] Figure 1This is a top view of an ESC 100 according to one or more embodiments. The ESC 100 includes a base 110 and a body 120. The base 110 is attached to the body 120. The body 120 has a disc-shaped form with an annular periphery substantially matching the shape and size of a substrate (wafer) located thereon. The body 120 includes a gas holding ring 128, a mesa 122, and a lifting pin channel (such as a hole or aperture) 124. The body 120 further includes gas channels (not shown), such as recesses, formed in the body 120 and fluidly coupled to a back gas source. The back gas is helium, helium gas, or other gases. Back gas can be supplied to the gas channels to enhance heat transfer between the body 120 and the substrate through multiple back gas conduits. The gas holding ring 128 can provide a seal on the annular periphery of the body 120 and between the substrate and the body 120 to prevent back gas from escaping into the interior space of the processing chamber.

[0024] The body 120 is made of a ceramic material. Suitable examples of ceramic materials include alumina (Al2O3), aluminum nitride (AlN), titanium oxide (TiO), titanium nitride (TiN), and silicon carbide (SiC). In one example, the body 120 is made of a ceramic material containing rare earth metals. In another example, the body 120 is made of or coated with Y2O3.

[0025] Figure 2 This is a schematic side view of the ESC 100. (As shown) Figure 2 As shown, a sealing strip (such as a gas retaining ring) 128 is formed on surface 126 of body 120. A platform (such as a protrusion) 122 is formed on surface 126 of body 120. Gas retaining ring 128 extends from surface 126 and surrounds an area of ​​body 120, including the location where platform 122 is disposed. Two or more of platform 122, gas retaining ring 128, and body 120 comprise one or more common materials. Alternatively, platform 122, gas retaining ring 128, and body 120 may comprise different materials.

[0026] The mesa 122 is a cylinder with a flat or domed surface 223. During processing, the substrate (such as...) Figure 3 The substrate 315 is supported by the surface 223 of the mesa 122. The diameter D1 of the mesa 122 is between about 500 μm and about 6 mm, the center-to-center (CTC) spacing D2 is between about 5 mm and about 30 mm, and the height H is between about 3 μm and about 100 μm. For example, the height H is between about 3 μm and about 80 μm, between about 3 μm and about 72 μm, between about 3 μm and 50 μm, or greater than about 3 μm. In another example, the mesa 122 has a diameter D1 that is less than about 500 μm or greater than about 6 mm. Furthermore, in one example, the height H is less than about 3 μm or greater than about 80 μm.

[0027] When not formed of the same material as the body 120, each of the mesa 122 is composed of one or more common layers. For example, each of the mesa 122 includes layers 232-236. Mesa 122a is a representative example of each of the mesa 122. Mesa 122a includes an adhesive layer 232, a transition layer 234, and a coating layer 236. The adhesive layer 232 is disposed on the surface 126 of the body 120. The transition layer 234 is disposed above the adhesive layer. The coating layer 236 is disposed above the transition layer 234. During substrate processing, the substrate (e.g., Figure 3 The substrate 315 is supported by and in contact with the coating layer 236.

[0028] The adhesive layer 232 is composed of an aluminum or erbium layer. In other examples, the adhesive layer may be composed of other metallic materials and / or metal-containing materials. The height (e.g., distance from surface 126) is from about 0.1 μm to about 1 μm. Furthermore, the width of the adhesive layer 232 is from about 0.50 μm to about 5.5 mm. The adhesive layer 232 increases the adhesion strength of the coating layer 236 to the substrate 110. In one example, the adhesive layer 232 increases the adhesion strength of the coating layer 236 to the substrate 110 formed of Al2O3.

[0029] The transition layer 234 is made of an oxide material. For example, the transition layer 234 is made of aluminum oxynitride (AlON). Alternatively, the transition layer 234 is made of erbium oxynitride (ErON). In other examples, the transition layer is made of other oxides and / or other materials. The height of the transition layer 234 is about 0.1 μm to about 1 μm from the surface of the adhesion layer 232. The width of the transition layer 234 is about 0.50 μm to about 6 mm. The transition layer 234 provides a transition between the material of the adhesion layer 232 and the coating layer 236, improving the adhesion of the coating layer 236 to the body 110. The transition layer 234 is disposed above the adhesion layer 232. In one example, the transition layer 234 is at least partially disposed on the surface 126 of the body 120.

[0030] Coating layer 236 is composed of a oxynitride material. Coating layer 236 is composed of an oxynitride material containing approximately 10 percent oxygen and approximately 90 percent nitrogen. In one example, coating layer 236 is composed of aluminum oxynitride (AlON) or erbium oxynitride (ErON). For example, coating layer 236 is composed of an ALON or ErON material containing more or less than approximately 20% oxygen, more or less than approximately 25% nitrogen, and more or less than 49% Al or Er, as analyzed by Rutherford backscattering spectroscopy (RBS). In one example, the coating layer is composed of oxynitride containing approximately 20% to approximately 40% oxygen, approximately 30% to approximately 50% nitrogen, and the remainder composed of Al or Er, as measured by energy-dispersive X-ray analysis (EDX). Increasing the nitrogen content in the oxynitride material increases the hardness of coating layer 236.

[0031] The coating layer 236 has a hardness of at least about 10 gigapascals (GPa). In one example, the coating layer 236 has a hardness of at least 14 GPa. In another example, the coating layer 236 has a hardness of at least about 20 GPa. In yet another example, the coating layer 236 has a hardness of at least 22 GPa. In one example, the coating layer 236 has a hardness of at least 24 GPa. Furthermore, in one example, the coating layer 236 has a hardness of at least 25 GPa or 30 GPa.

[0032] The height of the coating layer 236 is approximately 3 μm to approximately 70 μm from the surface of the transition layer 234. The width of the coating layer 236 is approximately 500 μm to approximately 5 mm. The coating layer 236 is disposed above the transition layer 234. Furthermore, in one example, the coating layer 236 is at least partially disposed on the surface 126 of the body 120. The substrate (e.g., substrate 315) is supported by the coating layer 236 during processing (e.g., rests on the coating layer 236). The hardness of the coating layer 236 reduces the effects of processing plasma and other chemicals used to process the substrate. Therefore, a body including the coating layer 236 (e.g., body 120) experiences less wear and tear and uses a longer time cycle between refurbishments compared to a body without the coating layer 236. Furthermore, a processing chamber including the coating layer 236 (e.g., processing chamber 300) has less downtime compared to a processing chamber without the coating layer 236.

[0033] The material composition of the transition layer 234 is based on the material composition of the coating layer 236. For example, in an embodiment where the coating layer 236 is made of AlON, the transition layer 234 is made of AlO. Furthermore, in an embodiment where the coating layer 236 is made of ErON, the transition layer is made of ErO.

[0034] The body 120 includes a sidewall 241. The sidewall 241 includes non-beveled edges. In other examples, one or more edges of the sidewall 241 are beveled. An annular washer 242 is disposed around the sidewall 241. The annular washer 242 is made of silicon or another similar material. A sidewall coating 240 is disposed on the sidewall 241 and between the sidewall 241 and the annular washer 242. The sidewall coating 240 is disposed on at least a portion of the sidewall 241. In one example, the sidewall coating 240 is disposed on less than all of the sidewall 241. Furthermore, the sidewall coating 240 is disposed on at least a portion of the edge 243 of the gas holding ring 128. In one example, the sidewall coating 240 is disposed on the sidewall 241, rather than on the edge 243 of the gas holding ring 128. Furthermore, the annular washer 242 is disposed along the edge 243 of the gas holding ring 128. The sidewall coating 240 has a radius ranging from about 0.01 inches to about 0.05 inches. In one example, the sidewall coating 240 has a radius of about 0.02 inches or 0.03 inches. In another example, the sidewall coating 240 is disposed on at least a portion of the angular flange 212 and / or 214.

[0035] Sidewall coating 240 comprises ErON. In other examples, sidewall coating 240 is composed of a material different from ErON, such as AlON. Sidewall coating 240 reduces the effects of processing plasma and other chemicals used to process the substrate on sidewall 241 (such as erosion by the sidewall material). In one or more examples, aluminum contamination of the processed substrate may occur due to erosion of sidewall 241. Therefore, a body including sidewall coating 240 undergoes less wear and tear and can be used for longer time cycles between refurbishment processes compared to a body without sidewall coating 240. Furthermore, contamination of the processed substrate is reduced, while the throughput of the corresponding processing chamber is increased.

[0036] Further reference Figure 1 The base 110 has a disc-shaped main body (such as...) Figure 2 The main body 212) and the secondary body (such as Figure 2 The main part 216) extends outward with an annular flange (such as Figure 2 The annular flange 214 is attached to the base 110 below the body 120. The base 110 is made of a material having thermal properties substantially matching those of the body 120. For example, the base 110 is made of a metal, such as aluminum or stainless steel, or other suitable material. Alternatively, the base 110 may be made of a composite material of ceramic and metallic materials. The base 110 has a coefficient of thermal expansion substantially matching that of the body 120 to reduce thermal expansion mismatch and mitigate warping of the electrostatic chuck 100 or separation of the base 110 from the body 120 during substrate processing.

[0037] refer to Figure 2 The base 110 is coupled to the body 120 via a bonding material 218. The bonding material 218 bonds the base 110 to the body 120 and facilitates heat exchange between the body 120 and the base 110. Furthermore, the bonding material 218 reduces thermal expansion mismatch between the body 120 and the base 110. In one example, the bonding material 218 mechanically bonds the base 110 to the body 120. In another example, the bonding material 218 is a thermal paste or tape. In yet another example, the bonding material 218 is a silicon-based or acrylic-based material.

[0038] The base 110 further includes a lifting pin channel 224, a back gas channel 226, an adsorption electrode 228, and a cooling conduit (such as a cooling channel) 229. The lifting pin channel 224 corresponds to the lifting pin channel 124. The back gas channel 226 supplies back gas to the conduits and channels within the body 120. Although... Figure 2 The image shows a single adsorption electrode 228, but in other examples, the base 110 includes two or more adsorption electrodes. Cooling fluid is supplied to the cooling channel 229 to aid in temperature control of the substrate during substrate processing.

[0039] Figure 3 This is a schematic cross-sectional view of a processing chamber 300 with a substrate support, including an ESC 100 disposed therein. The processing chamber 300 is a plasma processing chamber, such as a plasma etching chamber, a plasma-enhanced deposition chamber (e.g., a plasma-enhanced chemical vapor deposition (PECVD) chamber or a plasma-enhanced atomic layer deposition (PEALD) chamber), a plasma processing chamber, or a plasma-based ion implantation chamber (e.g., a plasma-doped (PLAD) chamber). However, the ESC 100 described herein can be used with other processing chambers or processing systems that use a substrate support with a patterned surface, including raised features and recessed surfaces.

[0040] exist Figure 3In the example, the described processing chamber 300 is a schematic diagram of a CVD processing chamber, and it includes a chamber cover 303, one or more sidewalls 302, and a chamber bottom 304, which define a processing volume 320. A gas distributor 312 (such as a spray head) with multiple openings 318 disposed therethrough is disposed in the chamber cover 303, and the gas distributor 312 is used to uniformly distribute processing gas from a gas inlet 314 into the processing volume 320. The gas distributor 312 is coupled to a first power supply 342 (such as an RF or VHF power supply), which supplies power to ignite and sustain the processing plasma 335 composed of the processing gas via capacitive coupling. The processing volume 320 is fluidly coupled to a chamber exhaust system (such as fluidly coupled to one or more dedicated vacuum pumps) via a vacuum outlet 313. The vacuum outlet 313 maintains the processing volume 320 under sub-atmospheric conditions and exhausts the processing gases and other gases therefrom. An ESC 100 is mounted on a support shaft 324 within the processing volume 320. The support shaft 324 extends sealingly through the chamber bottom 304. A controller 340 controls a lift (such as a linear motor, stepper motor, gears, or other mechanism) to control the raising and lowering of the support shaft 324 and the ESC 100 mounted thereon, facilitating the placement and removal of the substrate 315 relative to the processing volume 320 of the processing chamber 300.

[0041] The substrate 315 is loaded into and removed from the processing volume 320 through an opening 326 in one of the sidewalls 302, which is conventionally sealed with a door or valve (not shown) during substrate 315 processing. A plurality of lifting pins 336, positioned above but engaging with a support 334, are movably disposed through lifting pin channels 124 and 224 within the ESC 100 to facilitate the entry and exit of the substrate 315 from the ESC 100. The support 334 is coupled to a shaft 331. The shaft 331 extends hermetically through the chamber bottom 304. The shaft 331 raises and lowers the support 334 via an actuator 330. When the support 334 is in the raised position, the plurality of lifting pins 336 contact and move from below to extend above the table 122, thereby lifting the substrate 315 from the table 122 and enabling a robotic transporter to pick up the substrate 315. When the support 334 is in the lowered position, the multiple lifting pins 336 are flush with or lower than the table 122, and the substrate is placed on the table 122.

[0042] like Figure 3As shown, cooling channel 229 is fluidly coupled to and in fluid communication with coolant source 333 (such as a refrigerant source or water source). In this configuration, base 110 regulates the temperature of body 120 and substrate 315. Adsorption electrode 228 is driven with an adsorption voltage to secure substrate 315 to body 120. Adsorption electrode 228 is driven to provide a voltage potential between substrate 315 and adsorption electrode 228. The voltage potential between substrate 315 and adsorption electrode 228 generates an electrostatic adsorption force between electrode 228 and substrate 315. Adsorption electrode 228 is electrically connected to power supply 350, which provides one or more adsorption voltages to adsorption electrode 228. The adsorption voltage is between approximately -5000V and approximately +5000V.

[0043] A back volume 317 is formed between a recessed surface of the body 120 (such as the area between mesa 122) and the substrate 315. For example, when the substrate 315 is supported by the body 120, the substrate 315 is supported by the mesa 122 and the recessed surface is between the mesa 122. An inert thermally conductive back gas (such as He or other similar gas) is supplied to the back space 317 through a back gas channel 226 within the body 120, which is fluidly connected to a back gas supply 346. A controller 351 is used to maintain the gas pressure in the back space 317 during plasma processing of the substrate 315.

[0044] After processing one or more substrates, one or more mesa 122 undergo abrasion based on the chemicals and / or plasma used during substrate processing. For example, the height H of one or more mesa 122 is reduced due to abrasion. Reducing the height H of one or more mesa 122 reduces the corresponding distance between substrate 315 and surface 126. Furthermore, the heights H of two or more mesa 122 may differ from each other. Therefore, the processing of substrate 315 may encounter defects because the processing is uneven across the entire surface of substrate 315. For example, due to the different heights of the mesa 122, the first portion of substrate 315 may experience elevated temperatures compared to the second portion of substrate 315. The area of ​​elevated temperature negatively affects the processing of substrate 315, resulting in uneven material thickness across the substrate surface. As the height of one or more mesa 122 decreases based on the chemicals and / or plasma used during the processing of substrate 315, the distance between substrate 315 and body 120 decreases. As the height H of the mesa 122 decreases, substrate 315 experiences an increased adsorption voltage. Therefore, due to the change in adsorption voltage, the processed substrate may have one or more defects. As the height H of the mesa 122 decreases, defects appear within the processed substrate. Therefore, defective substrates are discarded, reducing the yield of the processing chamber 300. Reduced yield of the processing chamber 300 increases semiconductor manufacturing costs.

[0045] To reduce defects within the substrate, worn ESCs (such as ESCs with mesas having reduced height H) are removed from the processing chamber 300 and replaced. To reduce production costs, the ESC bodies are refurbished instead of discarded. Refurbishing the bodies involves the following steps: removing mesas 122 and any material deposited on surface 126 during substrate processing, cleaning the surface, polishing the surface, and depositing a new mesas 122. (About...) Figure 6 Method 600 describes the refurbishment process in more detail.

[0046] Mesh 122 is deposited on a new or refurbished body 120. For example, a mask 400 is used to deposit the mesh 122. The mask 400 includes mesh orifices (e.g., holes) 410 and lift pin orifices (e.g., holes) 412. Each of the mesh orifices 410 corresponds to a mesh (e.g., mesh 122) deposited on the body 120. Each of the lift pin orifices 412 corresponds to a corresponding lift pin channel 124 of the body 120. In one example, the mask 400 includes three or more lift pin orifices 412. In another example, the mask 400 includes two or more lift pin orifices 412.

[0047] Figure 5 This plots a portion of a mask 400 based on one or more examples. Specifically, Figure 5 A tabletop aperture 410 is illustrated according to one or more examples. The tabletop aperture 410 includes an upper portion 500, a middle portion 502, and a lower portion 504. The middle portion 502 is located between the upper portion 500 and the lower portion 504.

[0048] An upper portion 500 lies between surface 402 and middle portion 502. The upper portion 500 includes a sidewall 510. The sidewall 510 forms a first angle with surface 402. For example, the width 520 of the opening 530 in surface 402 corresponding to the upper portion 500 is greater than the width 524 of the opening 532 between the upper portion 500 and middle portion 502. The angle of the sidewall 510 relative to surface 402 is less than ninety degrees. For example, the angle of the sidewall 510 relative to surface 402 is in the range of about 70 degrees to about 85 degrees. However, in other embodiments, the angle of the sidewall 510 relative to surface 402 is less than about 70 degrees or greater than about 85 degrees. Furthermore, the width of the opening 532 is in the range of about 2 mm to about 3 mm. In one example, the width of the opening 532 is about 2.4 mm. Additionally, the upper portion 500 has a height 550. The height 550 is in the range of about 2 mm to about 3 mm. In one example, a height of 550 is approximately 2.5 mm or approximately 2.56 mm.

[0049] The middle portion 502 includes a sidewall 512. The sidewall 512 is substantially perpendicular to the surface 402. Furthermore, the angle of the sidewall 512 relative to the surface 402 is greater than the angle of the sidewall 510 relative to the surface 402. The width 524 of the middle portion 502 is substantially fixed. The width 524 of the middle portion 502 is smaller than the width 520 of the opening 530. The width 524 ranges from about 1.5 mm to about 3 mm. In one example, the width is about 2.4 mm. Additionally, the middle portion 502 has a height 552. The height 552 ranges from about 0.2 mm to about 0.4 mm. In one example, the height is about 0.32 mm. Furthermore, the height 552 is less than the height 550. The lower portion 504 is located between the middle portion 502 and the surface 126 of the body 120. The lower portion 504 includes a sidewall 514. The angle of the sidewall 514 relative to the surface 402 is greater than the angle of the sidewall 510 relative to the surface 402. For example, sidewall 514 is perpendicular to surface 402. In other examples, sidewall 514 may be at an angle less than or greater than 90 degrees relative to surface 402. The width of opening 534 between middle portion 502 and lower portion 504 is the same as the width of opening 532. For example, openings 532 and 534 have a width 524. In other examples, the width of opening 534 is greater than or less than the width of opening 532. The width 522 of lower portion 504 is greater than the width of opening 534. For example, width 522 is in the range of about 2 mm to about 4 mm. In one example, width 522 is about 3 mm. In other examples, the width 522 of lower portion 504 is the same as the width 524 of opening 534. Lower portion 504 has a height 554. Height 554 is greater than height 552. Or, height 554 is equal to or less than height 552. Height 554 is less than height 550. Or, height 554 is equal to or less than height 550. In one example, the height 554 is in the range of approximately 0.1 mm to approximately 0.25 mm. In another example, the height 554 is 0.17 mm. In yet another example, the height 554 is approximately 0.2 mm.

[0050] Further reference Figure 4A A mounting ring 420 surrounds a mask 400. During deposition on the deposition platform 122, the mounting ring 420 maintains the positioning of the mask 400 relative to the body 120. For example, the mounting ring 420 includes a retainer 422. The retainer 422 is attached to the mounting ring 420 and moves to contact a surface 402 of the mask 400. The retainer 422 applies force to the surface 402 of the mask 400 to maintain the positioning of the mask 400 relative to the body 120. The mounting ring 420 includes two or more retainers 422. The mounting ring 420 includes four or more retainers 422. Alternatively, the mounting ring 420 includes two or more retainers 422.

[0051] The mask 400 includes a region 404 in which the mask 400 contacts the holder 422, such that the holder 422 does not interfere with the formation of the platform 122. The position of region 404 corresponds to the position of the holder 422 of the mounting ring 420. Furthermore, the mounting ring 420 is spaced apart from the mask 410. A connection is formed between the mounting ring 420 and the mask 410 via the holder 422.

[0052] like Figure 4B As shown, the mounting ring 420 includes a retaining feature 430 (such as a lip feature) mounted on the annular flange 214. For example, the retaining feature 430 includes a surface 432 of the contact angle flange 214 and a surface 434 of the contact angle flange 214. The retaining feature 430 and the retainer 422 of the mounting ring 420 maintain the positioning of the mask 400 relative to the body 120. For example, the retaining feature 430 maintains the positioning of the mounting ring 420 relative to the base 110. When in contact with the mask 400, the retainer 422 maintains the positioning of the mask 400 relative to the mounting ring 420 and the body 120. Therefore, during processing (such as forming the platform 122), the mask 400 does not move relative to the body 120.

[0053] Figure 6 A flowchart illustrating a method 600 corresponding to one or more embodiments for depositing a table (e.g., table 122) onto a body (e.g., body 120) is shown. At block 610, the surface 126 of the body 120 is polished. For example, the surface 126 of the body 120 is polished by a polishing system comprising one or more polishing pads mounted on one or more plates. As the surface 126 of the body 120 presses against the polishing pad, the plates are rotated to rotate the corresponding polishing pad mounted on the plates. Furthermore, polishing fluid is applied to the polishing pad while it rotates and contacts the surface 126. The polishing fluid comprises abrasives dispersed in a water-soluble carrier fluid. For example, the polishing fluid comprises diamond abrasives, oxide abrasives, or other abrasive materials. The surface 126 of the body 120 is positioned to contact the polishing pad for polishing. For example, the polishing pad moves toward the surface 126 or the surface 126 moves toward the polishing pad, such that the polishing pad contacts the surface 126.

[0054] In frame 610, the surface 126 of the polished body 120 is made to have a roughness of less than or equal to about 4 μm of average surface roughness Ra. In another example, the surface 126 is polished to have a roughness of less than or equal to about 2 μm of Ra. In other examples, the surface 126 is polished to have a roughness of less than about 4 μm of Ra.

[0055] In frame 620, clean and polish the body (e.g., body 120). For example, at least clean the polished surface of body 120 (e.g., the polished surface 126). Clean the polished surface 126 with a sponge. Alternatively, clean the polished surface 126 with a 600-grit dressing stick until polishing residue is removed. Furthermore, dry the polished surface 126 with a cleanroom wipe. The back gas duct of body 120 can be rinsed and dried in deionized water to remove polishing fluid from the back gas duct of body 120.

[0056] In frame 630, a mesa 122 is deposited on surface 126 of body 120. For example, a mask 400 is used to deposit the mesa 122 on surface 126 of body 120.

[0057] Operations at frame 630 may include one or more operations at frames 632, 634, 636, and 638. For example, frame 630 for depositing mesa 122 on surface 126 includes the following operations: positioning a mask 400 on body 120 at frame 632. Mounting ring 420 is positioned around body 120, and retainer 422 is positioned against surface 402 of the mask to minimize movement of mask 400 relative to body 120. Mounting ring 420 may contact a portion of base 110. Body 120 (including mask 400 mounted thereon) is moved to a processing chamber to deposit a first layer on surface 126 of body 120. The processing chamber is configured to deposit one or more materials onto surface 126 to form mesa 122. Furthermore, the processing chamber may be configured similarly to processing chamber 300. In other embodiments, the processing chamber differs from processing chamber 300.

[0058] In frame 634, to deposit a mesa 122 on surface 126 of body 120, an adhesion layer (such as adhesion layer 232) is deposited on surface 126 of body 120. Adhesion layer 232 is made of aluminum and / or other metals. In frame 636, to deposit the mesa 122 on surface 126 of body 120, a transition layer (such as transition layer 234) is deposited above adhesion layer 232. Furthermore, at least a portion of transition layer 234 is deposited on surface 126 of body 120. Transition layer 234 is made of AlON, ErON, or other oxynitride-containing materials. Transition layer 234 may be made of an oxynitride material similar to coating layer 236. Transition layer 234 may be deposited in the same processing chamber as used for depositing adhesion layer 232, or in a different processing chamber than used for depositing adhesion layer 232.

[0059] In frame 638, a coating layer (such as coating layer 236) is deposited over transition layer 234. Coating layer 236 may also be partially deposited on surface 126 of body 120. Coating layer 236 is composed of oxynitrides. For example, coating layer 236 is composed of AlON or ErON. Furthermore, the coating layer has a hardness of at least about 14 GPa, at least about 20 GPa, at least 22 GPa, or at least 24 GPa. Coating layer 236 may be deposited in the same processing chamber as used for depositing transition layer 234 and / or adhesion layer 232, or in a different processing chamber than used for depositing transition layer 234 and / or adhesion layer 232.

[0060] In frame 640, the surfaces 126 of the table 122 and the body 120 are polished. The body 120 is polished to remove extraneous particles from the table 122. Removing extraneous particles from the table 122 creates a flat surface for the substrate (such as substrate 315) to be mounted during processing and reduces potential contamination during processing. The hardness of the polishing pad and the abrasiveness of the polishing fluid are selected to minimize damage to the coating 236. In one example, the polishing pad and / or polishing fluid used during 640 of method 600 are similar to those used during frame 610 of method 600. Alternatively, the roughness of the polishing pad is greater than or less than the roughness of the polishing pad used during frame 610 of method 600. Furthermore, the abrasiveness of the polishing fluid is greater than or less than the abrasiveness of the polishing fluid used during frame 610 of method 600.

[0061] In frame 650, a sidewall coating (such as sidewall coating 240) is deposited on the sidewall 241 of body 120. Sidewall coating 240 is made of erbium (ErON). In other examples, the sidewall coating is made of a material different from ErON. Sidewall coating 240 may be deposited in the same processing chamber as for depositing coating layer 236, transition layer 234, and / or adhesion layer 232, or in a different processing chamber than for depositing coating layer 236, transition layer 234, and / or adhesion layer 233. In one example, sidewall coating 240 is deposited during a time period overlapping with the deposition of adhesion layer 232, transition layer 234, and / or coating layer 236. In one example, sidewall coating 240 is deposited concurrently with the deposition of adhesion layer 232, transition layer 234, and / or coating layer 236. In one example, sidewall coating 240 is deposited during a time period overlapping with the deposition of coating layer 236. In another example, the sidewall coating 240 is deposited before or after the deposition platform 122. In one example, the sidewall coating 240 is deposited after the coating layer is deposited on frame 638 and before the polishing of body 120 at 640. Alternatively, the sidewall coating 240 is deposited after the polishing of body 120 at 640.

[0062] In one or more examples, the material deposited during the formation of the mesa 122 forms a gasket in the lift pin channel 124. The gasket in the lift pin channel 124 helps to seal the lift pins within the lift pin channel 124 and prevents process gases from entering the lift pin channel 124 during substrate processing.

[0063] Figure 7 A flowchart illustrating a method 700 for refurbishing a body (such as body 120) according to one or more embodiments is shown. Body 120 can be refurbished after determining that one or more mesa 122 have undergone deterioration due to plasma and / or other chemicals used to process substrate 315. For example, body 120 can be refurbished after a predetermined number of substrate processing cycles, a predetermined amount of time, detection of deterioration of one or more mesa 122, and / or detection of defects within the processed substrate. At block 710, mesa 122 is removed from a surface (such as surface 126) of the body (such as body 120). Mesa 122 is ground away from surface 126 of body 120. For example, mesa 122 is ground using a grinding pad. Alternatively, mesa 122 is chemically removed by a chemical etching process. Chemical etching removes mesa 122 without removing any dielectric material from body 120. Therefore, since the material thickness of body 120 is unaffected, the adsorption forces generated during substrate processing are not changed. In frame 720, the sidewall coating (such as sidewall coating 240) is removed from the sidewalls (such as sidewall 241) of the body 120. For example, the sidewall coating 240 is removed by polishing, such as by beading, sandblasting, or grinding. In other examples, the sidewall coating 240 is chemically removed using a chemical etching process. As described above, the chemical etching process removes the sidewall coating 240 without removing any dielectric material from the body 120. Therefore, since the material thickness of the body 120 is unaffected, the adsorption forces generated during substrate processing remain unchanged.

[0064] In block 730, surface 126 of body 120 is polished such that surface 126 has a Ra of less than or equal to about 4 μm. In another example, surface 126 is polished such that surface 126 has a roughness of less than or equal to about 2 Ra. In other examples, surface 126 is polished such that surface 126 has a roughness greater than 4 Ra. The operation of block 730 is similar to the operation of block 610 of method 600.

[0065] In box 740, the polished body (e.g., body 120) is cleaned. For example, the polished surface of body 120 (e.g., polished surface 126) is cleaned. Polished surface 126 is cleaned with a sponge. Alternatively, polished surface 126 is cleaned with a 600-grit dressing bar until surface polishing residue is removed. Furthermore, polished surface 126 is dried with a cleanroom wipe. The back gas duct of body 120 can be rinsed and dried in deionized water. The operation of box 740 is similar to that of box 620 of method 600.

[0066] In frame 750, a mesa 122 is deposited on surface 126 of body 120. For example, a mask 400 is used to deposit the mesa 122 on surface 126 of body 120.

[0067] Operation of frame 750 may include one or more operations of frames 752, 754, 756, and 758. For example, the operation of depositing mesa 122 onto surface 126 in frame 750 includes positioning mask 400 on body 120 in frame 752. Mounting ring 420 is positioned around body 120, and retainer 422 is positioned against surface 402 of mask to minimize movement of mask 400 relative to body 120. Mounting ring 420 may contact a portion of base 110. Body 120 (including mask 400 mounted thereon) is moved to a processing chamber to deposit a first layer on surface 126 of body 120. The processing chamber is configured to deposit one or more materials onto surface 126 to form mesa 122. Furthermore, the processing chamber may be configured similarly to processing chamber 300. In other embodiments, the processing chamber differs from processing chamber 300. Operation of frame 750 is similar to operation of frame 630 of method 600.

[0068] In frame 754, to deposit a mesa 122 on surface 126 of body 120, an adhesion layer (such as adhesion layer 232) is deposited on surface 126 of body 120. Adhesion layer 232 is made of aluminum and / or other metals. In frame 756, to deposit the mesa 122 on surface 126 of body 120, a transition layer (such as transition layer 234) is deposited above adhesion layer 232. Furthermore, transition layer 234 is deposited on surface 126 of body 120. Transition layer 234 is made of AlON, ErON, or other oxide-containing materials. Transition layer 234 may be made of an oxide material similar to coating layer 236. Transition layer 234 may be deposited in the same processing chamber as for depositing adhesion layer 232, or in a different processing chamber than for depositing adhesion layer 233.

[0069] In frame 758, a coating layer (such as coating layer 236) is deposited over transition layer 234. Coating layer 236 may also be partially deposited on surface 126 of body 120. Coating layer 236 is composed of oxynitrides. For example, coating layer 236 is composed of AlON or ErON. Furthermore, coating layer 236 has a hardness of at least about 14 GPa, at least about 20 GPa, at least 22 GPa, or at least 24 GPa. Coating layer 236 may be deposited in the same processing chamber as for depositing transition layer 234 and / or adhesion layer 232, or in a different processing chamber than for depositing transition layer 234 and / or adhesion layer 233.

[0070] In frame 760, the surfaces 126 of the mesa 122 and the body 120 are polished. The body 120 is polished to remove extraneous particles from the mesa 122. Removing extraneous particles from the mesa 122 creates a flat surface for the substrate (e.g., substrate 315) to be mounted during the process. The hardness of the polishing pad and the abrasiveness of the polishing fluid are selected to minimize damage to the coating layer 236. In one example, the polishing pad and polishing fluid used in frame 760 of method 700 are similar to those used in frame 730 of method 700. Alternatively, the roughness of the polishing pad is greater than or less than that used in frame 730 of method 700. Furthermore, the abrasiveness of the polishing fluid is greater than or less than that used in frame 730 of method 700. The operation of frame 760 is similar to the operation of frame 640 of method 600.

[0071] In frame 770, a sidewall coating (such as sidewall coating 240) is deposited on the sidewall 241 of the body 120. Sidewall coating 240 is made of ErON. Sidewall coating 240 may be deposited in the same processing chamber as the one used to deposit coating layer 236, transition layer 234, and / or adhesion layer 232, or in a different processing chamber than the one used to deposit coating layer 236, transition layer 234, and / or adhesion layer 233. Sidewall coating 240 may be deposited before or after deposition stage 122. For example, sidewall coating 240 may be deposited after coating layer 236 is deposited in frame 758 and before polishing body 120 in frame 760. Alternatively, sidewall coating 240 may be deposited after polishing body in frame 760.

[0072] Upon completion of method 600 and / or method 700, the ESC 100, including the table 122, is positioned within the processing chamber 300. For example, the ESC 100 is positioned on the support shaft 324.

[0073] While the foregoing describes embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from the basic scope of this disclosure, the scope of which is defined by the appended claims.

Claims

1. A method for preparing the body of an electrostatic chuck, the method comprising the following steps: Polish the surface of the body; Clean the polished surface of the body; A first mezzanine is deposited on the polished surface of the body, wherein each of the first mezzanines comprises: An adhesive layer on the polished surface of the body; A transition layer above the adhesion layer; and A coating layer comprising erbium oxynitride is disposed above the transition layer, wherein the coating layer has a hardness of at least 14 GPa; and Polish the first countertop to smooth its surface.

2. The method of claim 1, further comprising the following steps: A mask is positioned above the polished surface of the body, wherein the mask includes apertures, each aperture corresponding to a corresponding table in the first table.

3. The method of claim 2, wherein each pore in the pores comprises: The upper part has a first opening, the first opening having a first width; The middle part has a second opening, the second opening having a second width smaller than the first width; and The lower part, wherein the middle part is between the upper part and the lower part.

4. The method of claim 3, wherein the sidewall of the first opening forms an angle with the surface of the mask, the angle being less than 90 degrees.

5. The method of claim 1, wherein the surface of the body is polished to produce an average surface roughness of less than or equal to 4 μm.

6. The method of claim 1, wherein the coating layer has a hardness of at least 20 GPa.

7. The method of claim 1, wherein the coating layer has a hardness of at least 22 GPa.

8. The method of claim 1, wherein the coating contains 20% to 40% oxygen and 30% to 50% nitrogen as measured by energy dispersive X-ray analysis (EDX).

9. The method of claim 1, further comprising the following steps: A sidewall coating is formed above the sidewall of the main body.

10. The method of claim 9, wherein the sidewall coating comprises erbium oxynitride.

11. The method of claim 1, further comprising the following steps: Remove the second countertop from the main body.

12. A body of an electrostatic chuck, the body comprising: A countertop, the countertop being disposed on the polished surface of the body, each of the countertops comprising: An adhesive layer is disposed on the polished surface of the body; A transition layer, wherein the transition layer is disposed above the adhesive layer; and A coating layer comprising erbium oxynitride is disposed above the transition layer, wherein the coating layer has a hardness of at least 14 GPa; and A sidewall coating is disposed above the sidewall of the body.

13. The body of claim 12, wherein the polished surface has an average surface roughness of less than or equal to 4 μm.

14. The body as claimed in claim 12, wherein the coating layer has a hardness of at least 22 GPa.

15. The body of claim 12, wherein the coating contains 20% to 40% oxygen and 30% to 50% nitrogen as measured by energy dispersive X-ray analysis (EDX).

16. An electrostatic chuck, comprising: The main body, the main body comprising: A countertop, the countertop being disposed on the polished surface of the body, each of the countertops comprising: An adhesive layer is disposed on the polished surface of the body; A transition layer, wherein the transition layer is disposed above the adhesive layer; and A coating layer comprising erbium oxynitride is disposed above the transition layer, wherein the coating layer has a hardness of at least 14 GPa; and A sidewall coating is disposed above the sidewall of the body; and The base is attached to the body.

17. The electrostatic chuck of claim 16, wherein the polished surface has an average surface roughness of less than or equal to 4 μm.

18. The electrostatic chuck of claim 16, wherein the coating has a hardness of at least 20 GPa and contains 20% to 40% oxygen and 30% to 50% nitrogen as measured by energy dispersive X-ray analysis (EDX).

19. The electrostatic chuck of claim 16, wherein each of the platforms corresponds to a corresponding aperture in a plurality of apertures of the mask, each aperture comprising: The upper part has a first opening, the first opening having a first width; The middle portion, having a second opening, the second opening having a second width smaller than the first width; and The lower part, wherein the middle part is between the upper part and the lower part, wherein the sidewall of the first opening forms an angle with the surface of the mask, the angle being less than 90 degrees.

20. The method of claim 1, wherein the coating contains less than 20% oxygen.

21. The method of claim 1, wherein the coating contains 20% to 40% oxygen.

22. The body of claim 12, wherein the coating contains less than 20% oxygen.

23. The body of claim 12, wherein the coating contains 20% to 40% oxygen.

24. The electrostatic chuck of claim 16, wherein the sidewall coating is composed of a nitrogen oxide material having less than 20% oxygen.

25. The electrostatic chuck of claim 24, wherein the nitrogen oxide material having less than 20% oxygen is aluminum oxynitride or erbium oxynitride.

26. The electrostatic chuck of claim 16, wherein the sidewall coating is composed of a nitrogen oxide material having 20% ​​to 40% oxygen.

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