Method for setting the location of photomask detection marks and photomasks with detection marks

Abstract

This disclosure relates to a method for setting the position of a photomask detection mark and a photomask with a detection mark. The method includes: providing multiple photomasks; dividing the photomasks into patterned areas and non-patterned areas; selecting the area where the non-patterned area of ​​one photomask overlaps with the non-patterned area of ​​another photomask as a marking area, and setting a detection mark in the marking area. This disclosure, by dividing the chip area into patterned areas for light transmission according to the photomask layers, and setting the detection mark in other areas outside the patterned areas, allows the detection mark to be close to the patterned areas without increasing the chip area area, without losing the number of bare wafers; at the same time, by selecting the area where the detection mark overlaps with the non-patterned areas, the relative position between different photomasks can be detected, further improving the detection effectiveness.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more particularly to a method for setting the position of a photomask detection mark and a photomask with a detection mark. Background Technology

[0002] Currently, in the photomask manufacturing process, pattern position deviations can occur. The markers used to detect the position of the photomasks are placed on the dicing track, which is far away from the main pattern in the chip area. This makes it impossible to characterize the position deviation of the main pattern in the chip area while simultaneously characterizing the relative positions between photomasks. Summary of the Invention

[0003] The following is an overview of the subject matter described in detail in this disclosure. This overview is not intended to limit the scope of the claims.

[0004] To overcome the problems existing in related technologies, this disclosure provides a method for setting the position of a photomask detection mark and a photomask with a detection mark.

[0005] This disclosure provides a method for setting the position of a photomask detection marker, the method comprising:

[0006] Multiple photomasks are provided; chip areas and dicing channels are divided on the photomasks, and patterned areas and non-patterned areas are divided in the chip areas of the photomasks; the area where the non-patterned area of ​​one photomask overlaps with the non-patterned area of ​​another photomask is selected as a marking area, and a detection mark is set in the marking area.

[0007] According to some embodiments of this disclosure, dividing the chip area of ​​the photomask into a patterned area and a non-patterned area includes: dividing the chip area into a patterned area, wherein there are multiple patterned areas, and the chip area outside the patterned areas forms the non-patterned area.

[0008] According to some embodiments of this disclosure, the step of selecting the area where the non-patterned area of ​​one photomask overlaps with the non-patterned area of ​​another photomask as a marking area, and setting a detection mark in the marking area includes: grouping different photomasks according to the distance of the patterned area relative to the center of the photomask, and setting a detection mark at the same position on the outer photomask in the same group.

[0009] According to some embodiments of this disclosure, selecting the area overlapping with the non-patterned area of ​​another photomask within the non-patterned area of ​​one photomask as a marked area includes: when the edges of the different photomasks are aligned in the vertical direction, the overlapping area of ​​the projections of the non-patterned areas on the different photomasks defines the position, outline, and size of the marked area.

[0010] According to some embodiments of this disclosure, the detection mark has at least two contour boundaries in both a first direction and a second direction, the first direction being perpendicular to the second direction, and the number of boundaries of the detection mark in both the first direction and the second direction being an even number.

[0011] According to some embodiments of this disclosure, the maximum distance between two adjacent detection markers in the first direction and / or the second direction is less than or equal to the maximum measurement window of the corresponding detection machine.

[0012] According to some embodiments of this disclosure, the graphic size of the detection mark is smaller than the minimum resolution of the corresponding wafer exposure machine and / or the graphic size of the detection mark is larger than the minimum process size of the photomask.

[0013] A second aspect of this disclosure provides a photomask with a detection mark. The photomask with the detection mark includes: a photomask body and a detection mark disposed on the photomask body. The photomask body includes a patterned area and a non-patterned area. There are multiple patterned areas, and each non-patterned area has a marking area. Each photomask body has a marking area with the same position, outline, and size. The detection mark is located within the marking area.

[0014] According to some embodiments of this disclosure, the detection markers are distributed along the outline of the pattern area.

[0015] According to some embodiments of this disclosure, the hue of the marked area is consistent with the hue of the corresponding non-pattern area.

[0016] The technical solutions provided by the embodiments of this disclosure may include the following beneficial effects: by dividing the chip area into patterned areas for light transmission according to the photomask layers, and setting detection marks in other areas outside the patterned areas, the detection marks can be placed close to the patterned areas without increasing the chip area area, without losing the number of bare wafers; at the same time, by selecting to set the detection marks in areas where the patterned areas do not overlap, the purpose of detecting the relative positions between different photomasks can be achieved, further improving the detection effectiveness.

[0017] According to some embodiments of this disclosure, the hue of the marked area is consistent with the ambient hue of the corresponding wafer exposure machine.

[0018] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description. Attached Figure Description

[0019] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0020] Figure 1 This is a flowchart illustrating a method for setting the position of a photomask detection marker according to an exemplary embodiment.

[0021] Figure 2 This is a schematic diagram of the cutting path position in a photomask detection mark position setting method according to an exemplary embodiment.

[0022] Figure 3 This is a schematic diagram of the detection mark layout in a photomask detection mark position setting method according to an exemplary embodiment.

[0023] Figure 4 This is a schematic diagram of a photomask with different pattern areas in a photomask detection mark position setting method according to an exemplary embodiment.

[0024] Figure 5 This is a schematic diagram illustrating a method for setting the position of a photomask detection mark, in which photomasks with different pattern areas overlap to form a mark area, according to an exemplary embodiment.

[0025] Figure 6 This is a schematic diagram of the interior of the detection mark setting marking area in a photomask detection mark position setting method according to an exemplary embodiment.

[0026] Figure 7 This is a schematic diagram illustrating the position of the marker area in a photomask detection marker position setting method according to an exemplary embodiment.

[0027] Figure 8 This is a schematic diagram illustrating a method for setting the position of photomask detection marks according to an exemplary embodiment, comparing the maximum distance between two adjacent detection marks in a first direction and / or a second direction with the maximum measurement window of the detection machine.

[0028] Figure 9 This is a schematic diagram illustrating, according to an exemplary embodiment, that the color tone of the identification area and the non-pattern area are consistent.

[0029] Figure 10 This is a schematic diagram illustrating, according to another exemplary embodiment, that the color tone of the identification area and the non-pattern area are consistent.

[0030] Figure 11 This is a schematic diagram illustrating, according to another exemplary embodiment, that the color tone of the identification area and the non-pattern area are consistent.

[0031] Figure 12 This is a schematic diagram illustrating an inconsistent color tone between the identification area and the non-pattern area according to an exemplary embodiment.

[0032] Figure 13 This is a schematic diagram illustrating the consistency of the placement of detection markers between photomasks according to an exemplary embodiment.

[0033] Figure Labels

[0034] 1. Photomask body; 11. Cutting track; 12. Non-pattern area; 13. Pattern area; 2. Marking area; 3. Inspection mark; 4. Maximum measuring window of the inspection machine; 5. Grinding area. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions in the disclosed embodiments will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without creative effort are within the scope of protection of this disclosure. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this disclosure can be arbitrarily combined with each other.

[0036] As mentioned in the background section, in the current photomask manufacturing process, pattern position deviations can occur. Currently, the markers used to detect the position of the photomask are placed on the cutting track, which is far away from the main pattern in the chip area. Therefore, it is impossible to characterize the position deviation of the main pattern in the chip area while characterizing the relative positions between photomasks.

[0037] Based on this, the present disclosure provides a method for setting the position of photomask detection marks and a photomask with detection marks. By dividing the chip area into patterned areas for light transmission according to the photomask layers, and setting the detection marks in other areas outside the patterned areas, the detection marks can be placed close to the patterned areas without increasing the chip area area, without losing the number of bare wafers. At the same time, by selecting to set the detection marks in areas where the patterned areas do not overlap, the relative positions between different photomasks can be detected, further improving the detection effectiveness.

[0038] This disclosure provides an exemplary embodiment of a method for setting the position of a photomask detection mark and a photomask with a detection mark, such as... Figure 1 As shown, Figure 1 This is a flowchart illustrating a method for setting the position of a photomask detection marker according to an exemplary embodiment; Figure 2 This is a schematic diagram of the cutting path position in a photomask detection mark position setting method according to an exemplary embodiment; Figure 3 This is a schematic diagram of the detection mark layout in a photomask detection mark position setting method according to an exemplary embodiment; Figure 4 This is a schematic diagram of a photomask with different pattern areas in a photomask detection mark position setting method according to an exemplary embodiment; Figure 5 This is a schematic diagram illustrating a method for setting the position of a photomask detection mark in an exemplary embodiment, where photomasks with different pattern areas overlap to form a mark area. Figure 6 This is a schematic diagram of the interior of the detection mark setting marking area in a photomask detection mark position setting method according to an exemplary embodiment; Figure 7 This is a schematic diagram illustrating the position of the marker area in a photomask detection marker position setting method according to an exemplary embodiment; Figure 8 This is a schematic diagram illustrating a method for setting the position of photomask detection marks according to an exemplary embodiment, comparing the maximum distance between two adjacent detection marks in a first direction and / or a second direction with the maximum measurement window of the detection machine. Figure 9 This is a schematic diagram showing that the color tone of the identification area and the non-pattern area is consistent according to an exemplary embodiment; Figure 10 This is a schematic diagram showing that the color tone of the identification area and the non-pattern area is consistent according to another exemplary embodiment; Figure 11 This is a schematic diagram showing that the color tone of the identification area and the non-pattern area is consistent according to another exemplary embodiment; Figure 12 This is a schematic diagram illustrating an inconsistent color tone between the marking area and the non-pattern area according to an exemplary embodiment; Figure 13 This is a schematic diagram illustrating the consistency of the placement of detection markers between photomasks according to an exemplary embodiment. The following is in conjunction with... Figures 1 to 13 To explain.

[0039] The specific implementation methods described below are intended to help those skilled in the art understand this embodiment. However, this embodiment is not limited to the specific implementation methods described below.

[0040] Reference Figure 1 This disclosure provides an exemplary embodiment of a method for setting the position of a photomask detection marker, the method comprising:

[0041] S100 provides multiple photomasks.

[0042] For example, refer to 2 and Figure 3 In the process of making a chip, multiple photomasks need to be generated and used. Each photomask used to make a chip is considered an independent single-layer photomask.

[0043] S200: Divide the photomask into chip area and cutting path, and divide the chip area into pattern area and non-pattern area.

[0044] For example, refer to 2 and Figure 3 The photomask has circuit patterns for making chips. The area on the photomask with circuit patterns is called the pattern area 13, and the solid part of the photomask surrounding the pattern area 13 is called the non-pattern area 12.

[0045] S300. Select the area where the non-patterned area of ​​one photomask overlaps with the non-patterned area of ​​another photomask as the marking area, and set the detection mark in the marking area.

[0046] For example, refer to 2 and Figure 3 By overlapping the non-patterned areas 12 of the single-layer photomask, the non-patterned areas 12 shared by these single-layer photomask are selected as the marking areas 2 for fixing the detection mark 3. The position, size and outline of the marking areas 2 on each single-layer photomask are the same, that is, the position of the detection mark 3 relative to the center of the single-layer photomask is the same, and they are all located in the non-patterned areas 12 near the patterned area 13.

[0047] In this embodiment, in addition to the position detection of the pattern area 13 on the single-layer photomask, the relative position between different single-layer photomask layers also needs to be detected. To ensure the effectiveness of photomask position detection, the detection mark 3 on each single-layer photomask layer needs to be fixed in the same position. However, the circuit patterns on the photomasks used to manufacture the same chip are not exactly the same, that is, the shape, size, and layout of the pattern area 13 are not exactly the same. It is difficult to simultaneously ensure that the detection mark 3 is closer to the pattern area 13 to mark the position of the pattern area 13, and also to guide the detection of the relative position of different single-layer photomask layers.

[0048] By dividing the chip area into patterned areas 13 for light transmission according to the photomask layers, and setting detection markers 3 in other areas outside the patterned areas 13, the detection markers 3 can be placed close to the patterned areas 13 without increasing the chip area area, thus not reducing the number of bare wafers. Simultaneously, by placing the detection markers 3 in areas that do not overlap with the patterned areas 12, the relative positions between different photomasks can be detected, further improving the detection effectiveness. Ultimately, the detection markers 3 are positioned close to the patterned areas 13 for clearer identification of their location, and also provide indication during the detection of the relative positions between different photomasks, improving the accuracy of the detection results and the stability of the detection process.

[0049] In an exemplary embodiment of this disclosure, reference is made to Figure 2 and Figure 3 Step S200, dividing the chip area into patterned and non-patterned areas, specifically includes:

[0050] The chip area is divided into multiple pattern areas, and the chip area outside the pattern areas forms a non-pattern area.

[0051] For example, refer to Figure 2 and Figure 3 The chip area is used to accommodate and define the circuit pattern on the single-layer photomask layer. The dicing channel 11 surrounds the periphery of the chip area, and the photomask dicing process occurs in the dicing channel 11. The non-pattern area 12 is further defined as the chip area between the dicing channel 11 and the pattern area 13.

[0052] In this embodiment, by excluding the cutting path 11 from the non-patterned area 12, the area of ​​the non-patterned area 12 is further reduced, and the areas other than the patterned area 13 on the single-layer photomask are clearly defined. This allows the detection mark 3 to be placed in the area of ​​the chip area where no circuit pattern is set, without increasing the chip area, so that the detection mark 3 can be close to the patterned area 13 without losing the number of bare dies. At the same time, since the chip area of ​​each single-layer photomask has an area covered by the patterned area 13, the detection mark 3 can still be placed in the overlapping area of ​​the non-patterned area 12, which can achieve the purpose of detecting the relative position between different photomasks, further improving the detection effectiveness. Ultimately, the detection mark 3 can be close to the patterned area 13 to more clearly mark the position of the patterned area 13, and can also provide an indication in the process of detecting the relative positional relationship between different photomasks, improving the accuracy of the detection results and the stability of the detection process.

[0053] In an exemplary embodiment of this disclosure, reference is made to Figure 4 Step S300: Select the area where the non-patterned area of ​​one photomask overlaps with the non-patterned area of ​​another photomask as the marking area, and set a detection mark in the marking area. Specifically, this includes:

[0054] Different photomasks are grouped according to the distance of the pattern area relative to the center of the photomask, and detection marks are set at the same position on the outer photomask in the same group.

[0055] For example, continue to refer to Figure 4 , Figure 4 The diagram shows four different single-layer photomask layers with different patterned regions 13, retaining only the patterned region 13 and the non-patterned region 12 in the chip region. (See reference...) Figure 4 and Figure 5 Based on the distance of pattern area 13 relative to the center of the single-layer photomask, select to... Figure 4 The two single-layer photomask layers on the left side of the pattern area 13, which are farther from the center of the single-layer photomask, are grouped together. After these two single-layer photomask layers are overlapped, a marking area 2 is obtained where the position exists on different single-layer photomask layers in the two pattern areas 13. Figure 5 (As shown above), the following is as follows Figure 6 As shown in the upper part, the detection mark 3 can be fixed in the marking area 2. The number, layout and outline of the detection mark 3 can be adjusted according to the working conditions. It is only necessary to ensure that the detection mark 3 on all single-layer photomask layers in this group is consistent.

[0056] In this embodiment, the detection mark 3 can be located on single-layer photomask layers with different layouts in the two pattern areas 13. This achieves the goal of allowing the detection mark 3 to be close to the pattern area 13 without increasing the chip area, so as to more clearly mark the position of the pattern area 13. At the same time, the position of the detection mark 3 on different single-layer photomasks can be kept consistent, so that the detection mark 3 can provide an indication in the process of detecting the relative positional relationship between different photomasks, thereby improving the accuracy of the detection results and the stability of the detection process.

[0057] In other embodiments, refer to Figure 4 Based on the distance of pattern area 13 relative to the center of the single-layer photomask, select to... Figure 4 The two single-layer photomask layers on the right side of the pattern area 13 shown in the figure are grouped together, and after these two single-layer photomask layers are overlapped, a marking area 2 is obtained that exists simultaneously on different single-layer photomask layers in the two pattern areas 13. Figure 5 (As shown in the lower part), the following is as follows Figure 6 As shown in the lower part, the detection mark 3 can be fixed in the marking area 2. The number, layout and outline of the detection mark 3 can be adjusted according to the working conditions. It is only necessary to ensure that the detection mark 3 on all single-layer photomask layers in this group is consistent.

[0058] In this embodiment, the detection mark 3 can be located on single-layer photomask layers with different layouts in the two pattern areas 13. This achieves the goal of allowing the detection mark 3 to be close to the pattern area 13 without increasing the chip area, so as to more clearly mark the position of the pattern area 13. At the same time, the position of the detection mark 3 on different single-layer photomasks can be kept consistent, so that the detection mark 3 can provide an indication in the process of detecting the relative positional relationship between different photomasks, thereby improving the accuracy of the detection results and the stability of the detection process.

[0059] In an exemplary embodiment of this disclosure, reference is made to Figure 6 Step S300, selecting the area where the unpatterned area of ​​one photomask overlaps with the unpatterned area of ​​another photomask as the marked area, specifically includes:

[0060] When the edges of different photomasks are aligned vertically, the overlapping area of ​​the projections of the non-patterned areas on the different photomasks defines the position, outline, and size of the marked area.

[0061] For example, refer to Figure 6 and Figure 7 By overlapping different single-layer photomasks, a non-patterned area 12 shared by different single-layer photomasks can be obtained. This defined non-patterned area 12 is selected as a marker area 2. After setting a detection mark 3 in the marker area 2, the detection mark 3 can indicate both the position of the patterned area 13 on a single single-layer photomask and the relative positional relationship between different single-layer photomasks.

[0062] It should be understood that the above-described method of grouping different single-layer photomasks by the distance of the pattern area 13 relative to the center of the single-layer photomask is only one specific implementation. In other embodiments, there may be other grouping methods, such as based on the area, shape, etc. of the pattern in the pattern area 13.

[0063] It should be understood that as the number of single-layer photomasks in the same group increases, the area of ​​the non-pattern area 12 that is ultimately limited to the marking area 2 may decrease. Therefore, different single-layer photomasks that can be divided into the same group according to the distance of the pattern area 13 relative to the center of the single-layer photomask can be further grouped to ensure the area of ​​the marking area 2 used to set the detection mark 3, reduce the difficulty of setting the detection mark 3, and ensure the distance between the detection mark 3 and the edge of the pattern area 13 (as well as between adjacent detection marks 3), thereby improving the accuracy of the detection results and the stability of the detection process.

[0064] In an exemplary embodiment of this disclosure, reference is made to Figure 7 The detection mark 3 is distributed along the outline edge of the pattern area 13.

[0065] For example, refer to Figure 7 After overlapping and selection, the non-patterned area 12 forms the marking area 2. Since the non-patterned area 12 is the area surrounding the patterned area 13 in the chip area, the marking area 2, used to define the setting position of the detection marks 3, is located around the patterned area 13. There can be multiple detection marks 3, for example, three. When the circuit pattern in the patterned area 13 is approximately elongated, the three detection marks 3 are distributed at intervals along the length of the circuit pattern in the patterned area 13, outlining the contour of the circuit pattern in the patterned area 13. When the circuit pattern in the patterned area 13 has a frame-like layout, the detection marks 3 are distributed inside the area enclosed by the circuit pattern in the patterned area 13, extending from one side of the inner contour of the circuit pattern in the patterned area 13 to the other side, similarly defining the contour of the circuit in the patterned area 13. When the circuit pattern in the patterned area 13 has a large area and is distributed in a sheet-like shape, the detection marks 3 are distributed on both sides of the circuit pattern in the patterned area 13, flush with the edge of the circuit pattern in the patterned area 13, to define the position of the circuit pattern in the patterned area 13 through two rows of detection marks 3.

[0066] In this embodiment, the detection mark 3 fixed in the marking area 2 can be brought close to the pattern area 13 without increasing the chip area, so as to more clearly mark the position of the pattern area 13. With the detection mark 3 distributed along the outline edge of the pattern area 13, the position of the pattern area 13 can be indicated more clearly and accurately, which improves the accuracy of the detection results and the stability of the detection process.

[0067] In an exemplary embodiment of this disclosure, reference is made to Figure 8 The non-patterned area 12 includes at least the grinding area 5 or the empty area or the auxiliary exposure area.

[0068] For example, refer to Figure 8 The area on the chip area other than the pattern area 13 is the non-pattern area 12. The non-pattern area 12 includes the polishing area 5, the empty area (not shown in the figure), and the auxiliary exposure area (not shown in the figure). The detection mark 3 can be set in any one of the polishing area 5, the empty area (not shown in the figure), and the auxiliary exposure area (not shown in the figure), or simultaneously set in multiple of the aforementioned areas.

[0069] In an exemplary embodiment of this disclosure, reference is made to Figure 7 and Figure 8 The detection mark 3 has at least two contour boundaries in both the first and second directions, with the first direction being perpendicular to the second direction.

[0070] For example, refer to Figure 7 and Figure 8 The length direction of the single-layer photomask is the first direction, the width direction of the single-layer photomask is the second direction, and the outline boundary of the detection mark 3 is the outline edge line of the detection mark 3. The detection mark 3 is made to show at least two outline edge lines in both the length and width directions of the single-layer photomask. For example, the shape of the detection mark 3 is a square, so that the detection mark 3 has two parallel outline edges in both the length and width directions of the single-layer photomask.

[0071] In this embodiment, the machine for detecting the position of the photomask uses optical signals. When the detection mark 3 has two boundaries in the X and Y directions, the machine for detecting the position of the photomask can collect two optical signals, thereby obtaining accurate position information, improving the accuracy of the detection results and the stability of the detection process.

[0072] In an exemplary embodiment of this disclosure, reference is made to Figure 7 and Figure 8 The number of boundaries of detection marker 3 in both the first and second directions is even.

[0073] For example, refer to Figure 7 and Figure 8 The shape of the detection mark 3 is rectangular.

[0074] In this embodiment, the machine for detecting the position of the photomask uses optical signals. When the detection mark 3 has two boundaries in the X / Y directions, the machine for detecting the position of the photomask can collect two optical signals. The even number of optical signals brought about by the even number of boundaries can reduce the error caused by the measurement or detection mark contour, and improve the accuracy of the detection results and the stability of the detection process.

[0075] It should be understood that the rectangular shape of the detection mark 3 described above is only one specific implementation. In other embodiments, the shape of the detection mark 3 can also be hexagonal, octagonal, or other shapes. The embodiments disclosed herein do not limit the specific shape and the number of contour edges of the detection mark 3. Other implementations under the technical concept that the number of boundaries of the detection mark 3 in the first and second directions are both even numbers also fall under the concept of the technical solution defined in this application.

[0076] In an exemplary embodiment of this disclosure, reference is made to Figure 8 The maximum distance between two adjacent detection marks 3 in the first direction and / or the second direction is less than or equal to the maximum measurement window 4 of the corresponding detection machine.

[0077] For example, refer to Figure 8 The maximum distance between two adjacent detection marks 3 in the first and second directions is less than (or equal to) the maximum measurement window 4 of the corresponding detection machine.

[0078] In this embodiment, the maximum measurement window 4 of the detection machine is used to correspond to the detection mark 3 and acquire optical signals. When the maximum distance between two adjacent detection marks 3 in the first direction and the second direction is less than (or equal to) the maximum measurement window 4 of the corresponding detection machine, the two boundaries of the two detection marks 3 can be acquired by the detection machine at the same time. That is, the detection machine can acquire the optical signals of two different detection marks 3 used to define the position of the pattern area 13 at the same time, thereby obtaining the position information of the pattern area 13, improving the accuracy of the detection results and the stability of the detection process.

[0079] In an exemplary embodiment of this disclosure, reference is made to Figure 8 The graphic size of the detection mark 3 is smaller than the minimum resolution of the corresponding wafer exposure machine.

[0080] For example, the detection mark 3 has an elongated outline, and the graphic size of the detection mark 3 is the width of the detection mark 3.

[0081] In this embodiment, the detection mark 3 is smaller than the minimum resolution of the corresponding wafer exposure machine, which can prevent the detection mark 3 from appearing on the wafer, reduce the impact on subsequent wafer processing and even the possibility of wafer defects, and at the same time improve the accuracy of the detection results and the stability of the detection process.

[0082] In an exemplary embodiment of this disclosure, reference is made to Figure 8 The graphic size of the detection mark 3 is larger than the minimum process size of the photomask.

[0083] For example, the detection mark 3 has an elongated outline, and the graphic size of the detection mark 3 is the width of the detection mark 3.

[0084] In this embodiment, the detection mark 3 is larger than the minimum size of the photomask process to ensure that the detection mark 3 is presented on the photomask. The detection mark 3 is used to indicate the position of the pattern area on the photomask. That is, only when the detection mark 3 is presented on the photomask can the positional accuracy of the pattern on the photomask be characterized. At the same time, it also improves the accuracy of the detection results and the stability of the detection process.

[0085] In summary, the minimum size of the photomask process < the graphic size of the inspection mark 3 < the minimum resolution of the corresponding wafer exposure machine can ensure that the inspection mark 3 is stably presented on the photomask, thereby indicating the positional accuracy of the graphic on the photomask and reducing the possibility that the appearance of the inspection mark 3 on the wafer will affect subsequent wafer processing or even cause wafer defects.

[0086] A second aspect of this disclosure provides a photomask having a detection mark 3, referring to... Figure 7 The photomask with a detection mark 3 includes: a photomask body 1 and a detection mark 3 disposed on the photomask body 1. The photomask body 1 includes a patterned area 13 and a non-patterned area 12. There are multiple patterned areas 13. The non-patterned areas 12 have a marking area 2. Each photomask body 1 has a marking area 2 with the same position, outline and size. The detection mark 3 is located in the marking area 2.

[0087] For example, refer to Figure 7 There are two pattern areas 13, and the two pattern areas 13 are distributed on the photomask body 1 at intervals. The non-pattern area 12 surrounds the periphery of the two pattern areas 13. The marking area 2 is located in the area enclosed by the non-pattern area 12, and the marking area 2 is located at the outline edge of the pattern area 13.

[0088] In this embodiment, the detection mark 3 is placed in the non-patterned area 12 where no circuit pattern is set. This allows the detection mark 3 to be close to the patterned area 13 without increasing the area of ​​the original patterned area 13, thus maintaining the number of bare wafers. Furthermore, since the detection mark 3 is placed in the overlapping area of ​​the non-patterned area 12, meaning the detection marks 3 on different photomask bodies 1 are at the same center position relative to the photomask body 1, the relative positions between different photomasks can be detected, further improving the detection effectiveness. Ultimately, the detection mark 3 is positioned close to the patterned area 13 for clearer identification of its location, and also provides an indication during the detection of the relative positional relationships between different photomasks, improving the accuracy of the detection results and the stability of the detection process.

[0089] In an exemplary embodiment of this disclosure, reference is made to Figure 7 The detection mark 3 is distributed along the outline of the pattern area 13.

[0090] For example, refer to Figure 7After overlapping and selection, the non-patterned area 12 forms the marking area 2. Since the non-patterned area 12 surrounds the patterned area 13, the marking area 2, used to define the location of the detection marks 3, is located around the patterned area 13. There can be multiple detection marks 3, such as three. When the circuit pattern in the patterned area 13 is approximately elongated, the three detection marks 3 are spaced apart along the length of the circuit pattern in the patterned area 13, outlining the contour of the circuit pattern. When the circuit pattern in the patterned area 13 has a frame-like layout, the detection marks 3 are distributed inside the area enclosed by the circuit pattern in the patterned area 13, extending from one side of the circuit pattern's outline to the other, similarly defining the circuit outline. When the circuit pattern in the patterned area 13 has a large area and is distributed in a sheet-like shape, the detection marks 3 are distributed on both sides of the circuit pattern in the patterned area 13, flush with the edge of the circuit pattern, to define the position of the circuit pattern in the patterned area 13 through two rows of detection marks 3.

[0091] In this embodiment, the detection mark 3 fixed in the marking area 2 can be brought closer to the pattern area 13 without increasing the area of ​​the pattern area 13 and the non-pattern area 12. This allows for clearer marking of the position of the pattern area 13 without losing the number of bare wafers. In addition, the detection mark 3 is distributed along the contour edge of the pattern area 13, which can more clearly and accurately indicate the position of the pattern area 13, thereby improving the accuracy of the detection results and the stability of the detection process.

[0092] In an exemplary embodiment of this disclosure, reference is made to Figure 9 The hue of the marked area is consistent with the hue of the corresponding non-pattern area.

[0093] For example, the detection mark 3 is located within the marked area 2, which is a portion of the non-patterned area 12. Multiple marked areas 2 can be set, and different marked areas 2 are independent of each other and do not interfere with each other. (Refer to...) Figure 9 , Figure 9 The upper part shows a schematic diagram where the color tone of the marked area 2 is consistent with that of the non-pattern area 12. Figure 9 The lower half shows a schematic diagram corresponding to the aforementioned state where marker region 2 is not shown on the wafer. (Refer to...) Figure 10 , Figure 10 The upper part shows the relationship with Figure 9 A schematic diagram showing that the color tone of the corresponding marked area 2 is consistent with that of the non-pattern area 12. Figure 9 The difference lies in the change in tone between marked area 2 and non-pattern area 12. Figure 10 The lower half shows a schematic diagram corresponding to the aforementioned state where marker region 2 is not shown on the wafer. (Refer to...) Figure 11 , Figure 11The upper part shows that both the non-pattern area 12 and the marker area 2 are divided into two parts with different shades, corresponding to the left and right sides respectively. Figure 9 and Figure 10 When the color tone of marked area 2 on the photomask is the same as that of non-patterned area 12, Figure 11 The lower half shows a schematic diagram of the marked area 2 not appearing on the wafer in the aforementioned state. Regardless of the specific number and shape of the detection marks 3, when the hue of the marked area 2 matches the hue of its corresponding non-patterned area 12, the outline of the marked area 2 will not appear on the wafer. This achieves the goal of reducing the possibility of defects in subsequent manufacturing processes and improving the accuracy of the detection results and the stability of the detection process.

[0094] In this embodiment, refer to Figure 12 , Figure 12 The upper part shows the same as the aforementioned Figure 9 , Figure 10 and Figure 11 A schematic diagram showing that the hue of the marked area 2 is different from the hue of the non-patterned area 12. Figure 12 The lower half shows the same as the one mentioned above. Figure 9 , Figure 10 and Figure 11 This is a schematic diagram showing the outlines of different marking areas 2 on the wafer. When the color tone of the area surrounding the location of the detection mark 3 is opposite to the color tone of the non-patterned area 12, the outline of the area surrounding the location of the detection mark 3 will be displayed on the wafer, that is, the location of the marking area 2 will be displayed on the wafer, which will bring the risk of defects to this layer or subsequent process technology.

[0095] Reference Figure 13 , Figure 13 This is a schematic diagram illustrating the consistency of the placement (measurement point) of the detection marker 3 among the photomasks. The function of the detection marker 3 is to detect the positional deviation of the patterns on the photomasks and to calculate the positional deviation between the patterns. Therefore, the shape of the detection marker 3 does not need to be identical; only the consistency of its placement (measurement point) among the photomasks is required. Different detection markers 3 can be applied to different environments with different photomasks, increasing the freedom of placement, expanding the data sample size, and improving accuracy.

[0096] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This disclosure is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the following claims.

[0097] It should be understood that this disclosure is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this disclosure is limited only by the appended claims.

Claims

1. A method for setting the position of a photomask detection marker, characterized in that, The method for setting the position of the photomask detection marker includes: Provides multiple photomasks; Chip areas and dicing channels are divided on the photomask, and patterned areas and non-patterned areas are divided in the chip areas of the photomask; Select the area where the non-patterned area of ​​one photomask overlaps with the non-patterned area of ​​another photomask as a marking area, and set a detection mark in the marking area; Wherein, the graphic size of the detection mark is smaller than the minimum resolution of the corresponding wafer exposure machine and / or the graphic size of the detection mark is larger than the minimum process size of the photomask.

2. The method for setting the position of the photomask detection mark according to claim 1, characterized in that, The division of the chip area of ​​the photomask into patterned and non-patterned areas includes: The chip area is divided into multiple patterned areas, and the chip area outside the patterned areas forms the non-patterned area.

3. The method for setting the position of the photomask detection mark according to claim 1, characterized in that, The step of selecting the area where the non-patterned area of ​​one photomask overlaps with the non-patterned area of ​​another photomask as a marked area, and setting a detection mark in the marked area, includes: Different photomasks are grouped according to the distance of the pattern area relative to the center of the photomask, and detection marks are set at the same position on the outer photomask in the same group.

4. The method for setting the position of the photomask detection mark according to claim 1, characterized in that, The selection of the area overlapping the unpatterned area of ​​one photomask with the unpatterned area of ​​another photomask as the marked area includes: When the edges of the different photomasks are aligned in the vertical direction, the overlapping area of ​​the projections of the non-patterned areas on the different photomasks defines the position, outline, and size of the marked area.

5. The method for setting the position of the photomask detection mark according to claim 1, characterized in that, The detection marker has at least two contour boundaries in both the first and second directions, with the first direction perpendicular to the second direction, and the number of boundaries of the detection marker in both the first and second directions is an even number.

6. The method for setting the position of the photomask detection mark according to claim 1, characterized in that, The maximum distance between two adjacent detection marks in the first and / or second directions is less than or equal to the maximum measurement window of the corresponding detection machine.

7. A photomask with a detection mark, characterized in that, The photomask with detection markings includes: a photomask body and a detection marking disposed on the photomask body. The photomask body includes patterned areas and non-patterned areas. There are multiple patterned areas, and each non-patterned area has a marking area. Each photomask body has a marking area with the same position, outline, and size. The detection marking is located within the marking area. The graphic size of the detection marking is smaller than the minimum resolution of the corresponding wafer exposure machine and / or the graphic size of the detection marking is larger than the minimum process size of the photomask.

8. The photomask with detection markings according to claim 7, characterized in that, The detection markers are distributed along the outline of the pattern area.

9. The photomask with detection markings according to claim 7, characterized in that, The hue of the marked area is consistent with the hue of the corresponding non-pattern area.

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