A high open-circuit voltage wide bandgap perovskite solar cell and a preparation method thereof

Abstract

The application belongs to the field of solar cells, and particularly relates to a high open-circuit voltage wide-bandgap perovskite solar cell and a preparation method thereof. The wide-bandgap perovskite solar cell comprises, from bottom to top, an ITO substrate, a hole transport layer, an aluminum oxide thin layer, a perovskite light-absorbing layer, an electron transport layer, an interface modification layer and a metal electrode. The wide-bandgap perovskite solar cell is provided with an aluminum oxide thin layer on the hole transport layer, which can improve the surface roughness and wettability of the hole transport layer, improve the crystallization quality of the perovskite thin film, inhibit the non-radiative recombination of interface carriers between the hole transport layer and the perovskite light-absorbing layer, and improve the built-in electric field and open-circuit voltage of the perovskite solar cell. Meanwhile, the aluminum oxide thin layer can avoid the influence of the hole transport layer on the perovskite thin film when the hole transport layer is invaded by air and water oxygen, and significantly improve the photoelectric conversion efficiency and stability of the wide-bandgap perovskite solar cell.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of solar cells, and particularly relates to a high open-circuit voltage wide-bandgap perovskite solar cell and a preparation method thereof. BACKGROUND

[0002] With the increasing seriousness of energy and environmental problems, new photovoltaic technology research has important economic and strategic significance for social development. Perovskite materials, as a new type of photovoltaic energy material, have the advantages of high light absorption coefficient, high mobility, adjustable band gap, and solution method preparation. The photoelectric conversion efficiency of perovskite solar cells has exceeded 25% or more, which can be comparable to silicon cells. The theoretical limit efficiency of crystalline silicon cells is close to 29%, and perovskite / crystalline silicon tandem solar cells are expected to break through the theoretical efficiency limit of Shockley-Queisser, becoming the new star of the next generation of photovoltaic industry. In view of the industrialization application requirements of perovskite / crystalline silicon solar cells, high-efficiency and stable wide-bandgap perovskite solar cells are the cornerstone of realizing high-efficiency tandem solar cells. Considering the current matching problem of tandem cells, the band gap of wide-bandgap perovskite material and current matching determine its current density. Therefore, obtaining a wide-bandgap perovskite solar cell with high open-circuit voltage is of great significance to improve the perovskite / crystalline silicon tandem solar cell. Common wide-bandgap perovskite materials include Cs x FA 1-x PbI y Br 3-y , CsPbI3, CsPbI2Br, CsPbI2Br, CsPbBr3, etc. Considering the stability and current matching of perovskite components, the wide-bandgap perovskite material currently used in perovskite / crystalline silicon tandem solar cells is mainly Cs x FA 1-x PbI y Br 3-y Wide-bandgap perovskite (band gap 1.68-1.75 eV) is mainly used, which has good stability and device performance. However, the open-circuit voltage of the wide-bandgap perovskite solar cell currently used in products is less than 1.3V, which further limits the open-circuit voltage and device performance of perovskite / crystalline silicon tandem.

[0003] In the prior art, Yu Y et al. in their published paper "Synergistic Effects of Lead Thiocyanate Additive and Solvent Annealing on the Performance of Wide-Bandgap Perovskite Solar Cells" (ACS Energy Letter, vol. 2, pp. 1177-1182, 2017) disclose a preparation method of a wide-bandgap perovskite solar cell, which obtains a wide-bandgap perovskite thin film with a larger grain size by adding an appropriate amount of lead thiocyanate to the perovskite precursor solution and using solvent-assisted annealing, and a wide-bandgap perovskite solar cell based on the perovskite thin film achieves an open-circuit voltage of 1.25V. However, the method has the disadvantage that the interface charge non-radiative recombination of the wide-bandgap perovskite solar cell prepared by the method is serious, and the open-circuit voltage still has a large room for improvement.

[0004] Yang Li et al. in their published paper "Interfacial Engineering of PTAA / Perovskite for Improved Crystallinity and Holes Extraction in Inverted Perovskite Solar Cells" (ACS Applied Materials & Interfaces, vol. 14(2), pp. 3284-3292, 2022) disclose a method of modifying the surface of poly[bis(4-phenyl)(2,4,6-triMethylphenyl)aMine] (PTAA) with an organic small molecule 4,4',4"-(1-hexyl-1h-dithieno[3',2':3,4;2",3":5,6]benzo[1,2-d]imidazole-2,5,8-triyl)tris(N,N-bis(4-methoxyphenyl)phenylamine), which can significantly improve the conductivity and mobility of the hole transport layer, improve the hydrophobic properties of PTAA, and improve the device efficiency and stability. However, the method has the disadvantage that the organic small molecule is also prone to water absorption, causing water and oxygen to erode the perovskite thin film and affect the stability of the perovskite solar cell device. SUMMARY

[0005] To solve the above problems, the present application provides a high open-circuit voltage wide-bandgap perovskite solar cell and a preparation method thereof.

[0006] In a first aspect of the present application, a high open-circuit voltage wide bandgap perovskite solar cell is provided, which comprises, from bottom to top, an ITO substrate, a hole transport layer, an aluminum oxide thin layer, a perovskite light absorbing layer, an electron transport layer, an interface modification layer, and a metal electrode, wherein the aluminum oxide thin layer is located between the hole transport layer and the perovskite light absorbing layer.

[0007] In an embodiment of the present application, the ITO substrate is a 150 nm ITO electrode deposited on a 1.1 mm glass.

[0008] In an embodiment of the present application, the hole transport layer is a poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] material.

[0009] In an embodiment of the present application, the aluminum oxide thin layer is formed using an atomic layer deposition device to form a 2-3 nm thin layer.

[0010] In an embodiment of the present application, the perovskite light absorbing layer is a Cs x FA 1-x PbI 1-y Br y of any one of the components, and the perovskite light absorbing layer is formed by any one of a doctor blade method, a one-step method, and a two-step method.

[0011] In an embodiment of the present application, the electron transport layer is a [6,6]-phenyl C 61 methyl butyrate material.

[0012] In an embodiment of the present application, the interface modification layer is a bathocuproine material.

[0013] In an embodiment of the present application, the metal electrode is any one of Au, Ag, and Cu, and the thickness of the metal electrode is 100 nm.

[0014] In a second aspect of the present application, a preparation method of a high open-circuit voltage wide bandgap perovskite solar cell is provided, which comprises:

[0015] preprocessing an ITO substrate, and preparing a hole transport layer on the ITO substrate;

[0016] preparing an aluminum oxide thin layer on the hole transport layer;

[0017] preparing a perovskite light absorbing layer on the aluminum oxide thin layer, wherein the perovskite light absorbing layer is any one of components of Cs x FA 1- x PbI y Br 3-y ;

[0018] The prepared [6,6]-phenyl C 61 A methyl butyrate material precursor solution is spin-coated on the perovskite light-absorbing layer to form an electron transport layer.

[0019] A prepared bathocuproine precursor solution is spin-coated on the electron transport layer to form an interface modification layer.

[0020] A metal electrode is deposited on the interface modification layer.

[0021] In an embodiment of the present application, the preparation of the aluminum oxide thin layer on the hole transport layer comprises:

[0022] The aluminum source is pulsed for 0.1 s and the oxygen source is pulsed for 0.3 s to deposit 3 nm of aluminum oxide at a temperature of 150°C, a N2 flow rate of 12 sccm, and a pressure of 0.3 Torr.

[0023] Compared with the prior art, the present application has the following beneficial effects:

[0024] 1. The present application prepares a dense aluminum oxide layer on the hole transport layer of the material PTAA, overcomes the hydrophobic properties of the hole transport layer of the material PTAA in the prior art, improves the film-forming properties of the perovskite precursor solution on the hole transport layer, and the aluminum oxide thin layer improves the interface energy level matching of the solar cell, so that the wide-bandgap perovskite solar cell prepared by the method of the present application has a high open-circuit voltage.

[0025] 2. The present application prepares a dense aluminum oxide layer on the hole transport layer, and the aluminum oxide can also act as a protective layer, overcoming the influence of air and water oxygen and the corrosion of the perovskite solution on the PTAA or other organic small molecule modification layer in the prior art, and the wide-bandgap perovskite solar cell prepared by the present application has high stability.

[0026] The present application prepares a thin aluminum oxide layer between the hole transport layer and the perovskite light-absorbing layer by using atomic layer physical deposition, and the dense aluminum oxide can improve the roughness of the hole transport layer and improve the crystalline quality of the perovskite thin film, realizing a wide-bandgap perovskite solar cell with a high open-circuit voltage. At the same time, the dense aluminum oxide thin layer can effectively protect the hole transport layer and the perovskite light-absorbing layer from the influence of water and oxygen, improving the stability of the device. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 A structure schematic diagram of a high open-circuit voltage wide-bandgap perovskite solar cell provided by an embodiment of the present application;

[0028] Figure 2 A preparation flowchart of a high open-circuit voltage wide-bandgap perovskite solar cell provided by an embodiment of the present application;

[0029] Figure 3 Current-voltage graph of the high open-circuit voltage wide bandgap perovskite solar cell provided in Embodiment 3 of the present application;

[0030] Figure 4 Current-voltage graph of the high open-circuit voltage wide bandgap perovskite solar cell provided in Embodiment 4 of the present application;

[0031] Figure 5 Current-voltage graph of the high open-circuit voltage wide bandgap perovskite solar cell provided in Embodiment 5 of the present application. DETAILED DESCRIPTION

[0032] In order to further illustrate the technical means and effects adopted by the present application to achieve the predetermined object, a high open-circuit voltage wide bandgap perovskite solar cell and a preparation method thereof according to the present application are described in detail below in combination with the drawings and specific embodiments. The foregoing and other technical contents, features and effects of the present application are described in detail below with respect to the specific embodiments of the present application, but it should be understood that the protection scope of the present application is not limited by the specific embodiments.

[0033] It should be noted that SA1, SA2, SA3, SA4, SA5, SA6, SA7, SB1, SB2, SB3, SB4, SB5, SB6, SB7, SC1, SC2, SC3, SC4, SC5, SC6, SC7 are used to represent steps and are not reflected in the figures.

[0034] Embodiment 1

[0035] Please refer to Figure 1 , Figure 1 The structure of the high open-circuit voltage wide bandgap perovskite solar cell provided in the embodiment of the present application is shown in the figure, which comprises, from bottom to top, an indium tin oxide (ITO) substrate 1, a hole transport layer 2, an aluminum oxide thin layer 3, a perovskite light-absorbing layer 4, an electron transport layer 5, an interface modification layer 6 and a metal electrode 7.

[0036] Specifically, the aluminum oxide thin layer 3 is located between the hole transport layer 2 and the perovskite light-absorbing layer 4; the ITO substrate 1 is a 150nm ITO electrode deposited on a 1.1mm glass; the hole transport layer 2 uses poly[bis 4-phenyl 2,4,6-trimethylphenylamine] material; the aluminum oxide thin layer 3 is prepared using an atomic layer deposition device and has a thickness of 2-3nm; the perovskite light-absorbing layer 4 uses Cs x FA 1- x PbI 1-y Br yThe component, the perovskite light-absorbing layer 4 is formed by any one of the methods of the doctor blade method, the one-step method and the two-step method; the electron transport layer 5 is [6,6]-phenyl C 61 The methyl butyrate material; the interface modification layer 6 is a bathocuproin material; the material of the metal electrode 7 is any one of Au, Ag and Cu, and the thickness of the metal electrode 7 is 100 nm.

[0037] Since the embodiment prepares a dense aluminum oxide layer on the hole transport layer with the material PTAA, the hydrophobic property of the hole transport layer with the material PTAA in the prior art is overcome, the film-forming property of the perovskite precursor solution on the hole transport layer is improved, and the aluminum oxide thin layer improves the interface energy level matching of the solar cell, so that the wide-bandgap perovskite solar cell prepared by the method of the embodiment has a high open-circuit voltage. In addition, since the embodiment prepares a dense aluminum oxide layer on the hole transport layer, the aluminum oxide can also serve as a protective layer, the PTAA or other organic small molecule modification layer in the prior art is easy to be affected by air and water oxygen and corroded by the perovskite solution, and the wide-bandgap perovskite solar cell prepared by the embodiment has high stability.

[0038] Embodiment 2

[0039] Please refer to Figure 2 , Figure 2 The preparation process of the high open-circuit voltage wide-bandgap perovskite solar cell provided by the embodiment of the application is shown in the figure, and the specific steps of the method include the following:

[0040] S1, pretreating the substrate: the ITO substrate 1 is sequentially ultrasonically cleaned in glass cleaning agent Decon-90, deionized water, acetone and ethanol, dried by blowing nitrogen, and then placed in an ultraviolet ozone cleaning machine for pretreatment to obtain the pretreated ITO substrate 1;

[0041] S2, preparing the hole transport layer 2: the prepared poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] precursor solution is spin-coated on the pretreated ITO substrate 1, and then placed on a hot table for annealing to form the hole transport layer 2;

[0042] S3, preparing the aluminum oxide thin layer 3: the aluminum oxide thin layer 3 is prepared on the hole transport layer 2 by using an atomic layer physical deposition device;

[0043] S4, preparing the perovskite light-absorbing layer 4: the perovskite light-absorbing layer 4 is prepared on the aluminum oxide thin layer 3 by using a solution method;

[0044] Specifically, the perovskite light-absorbing layer 4 is Cs x FA 1-x PbI y Br 3-y Any component of the wide-bandgap perovskite (band gap 1.68-1.75 eV).

[0045] S5, preparing an electron transport layer 5: spin-coating a methyl butyrate material precursor solution on the perovskite light-absorbing layer 4 to form the electron transport layer 5; 61 S5, preparing an electron transport layer 5: spin-coating a methyl butyrate material precursor solution on the perovskite light-absorbing layer 4 to form the electron transport layer 5;

[0046] S6, preparing an interface modification layer 6: spin-coating a prepared bathocuproine precursor solution on the electron transport layer 5;

[0047] S7, preparing a metal electrode 7: depositing a metal electrode 7 of the wide-bandgap perovskite solar cell on the interface modification layer 6 by using a vacuum coating instrument, to complete the preparation of the wide-bandgap perovskite solar cell.

[0048] The preparation method of the wide-bandgap perovskite solar cell provided in the embodiment improves the surface properties of the hole transport layer by preparing an aluminum oxide thin layer on the hole transport layer, and improves the crystalline quality of the perovskite thin layer and the open-circuit voltage of the device.

[0049] The embodiment improves the roughness of the hole transport layer and improves the crystalline quality of the perovskite thin film by preparing a thin aluminum oxide layer between the hole transport layer and the perovskite light-absorbing layer by using an atomic layer physical deposition method, so as to realize the wide-bandgap perovskite solar cell with high open-circuit voltage. Meanwhile, the dense aluminum oxide thin layer can effectively protect the hole transport layer and the perovskite light-absorbing layer from the influence of water and oxygen, and improve the stability of the device.

[0050] Embodiment 3

[0051] The embodiment 3 of the present application is a preparation process of a high open-circuit voltage wide-bandgap perovskite solar cell provided by the present application, and the specific steps are as follows:

[0052] SA1, pretreating a substrate: sequentially placing the ITO substrate 1 into a glass cleaning agent Decon-90, deionized water, acetone and ethanol for ultrasonic cleaning, then blowing the substrate dry by using nitrogen, and placing the substrate in an ultraviolet ozone cleaning machine for treatment for 30 min to obtain a pretreated ITO substrate 1.

[0053] Specifically, the cleaning temperature of the ultrasonic cleaning is 60℃, and the time of the three times of ultrasonic cleaning is 30 min.

[0054] SA2, preparing a hole transport layer 2: dissolving 2 mg of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] in 1 mL of toluene, stirring for 2 h to obtain a PTAA precursor solution, then spin-coating the PTAA precursor solution on the pretreated ITO substrate 1, and annealing on a 100℃ hot stage for 10 min to obtain a hole transport layer 2 using PTAA;

[0055] SA3, Preparation of alumina thin layer 3: Alumina thin layer 3 was prepared using atomic layer deposition (ALD) equipment. Under the conditions of temperature of 150℃, N2 flow rate of 12sccm and gas pressure of 0.3Torr, aluminum source pulse of 0.1s and oxygen source pulse of 0.3s were used to deposit 3nm of alumina.

[0056] SA4. Preparation of the perovskite absorbing layer 4: Weigh 151.34 mg of formamidinium hydroiodate (FAI), 57.15 mg of cesium iodide (CsI), 278.91 mg of lead iodide (PbI2), and 181.66 mg of lead bromide (PbBr2), and dissolve them in 1 ml of a solution with a volume ratio of N,N-dimethylformamide (DMF):dimethyl sulfoxide (DMSO) = 4:1. Stir for 12 h to obtain perovskite CsI. 0.2 FA 0.8 PbI 2.1 Br 0.9 Precursor solution. Take 80 μL of perovskite precursor solution and drop it onto the center of alumina thin layer 3. Spin coat at 1000 rpm for 10 s, then accelerate to 6000 rpm for 30 s. Add 250 μL of chlorobenzene at a total time of 25 s. Then place it on a hot stage and anneal at 100 °C for 30 min to obtain dense perovskite light-absorbing layer 4.

[0057] SA5, Preparation of electron transport layer 5: Weigh 20 mg of [6,6]-phenyl C 61 Methyl butyrate ([6,6]-Phenyl C 61 The butyric acid methyl ester (PCBM) material was dissolved in 1 mL of chlorobenzene (CB) solution and stirred for 12 h to obtain a PCBM precursor solution. 70 μL of the PCBM precursor solution was spin-coated at 2000 rpm for 30 s onto the perovskite light-absorbing layer 4 as an electron transport layer 5.

[0058] SA6. Preparation of interface modification layer 6: Weigh 0.5 mg of bath copper (BCP) material and dissolve it in 1 mL of isopropanol solution. Stir for 12 h to obtain BCP precursor solution. Spin coat it on electron transport layer 5 at 6000 rpm for 30 s as interface modification layer 6.

[0059] SA7, Preparation of metal electrode 7: Using a vacuum coating machine at a vacuum degree of 5×10 -4 Below Pa, A wide-bandgap perovskite solar cell was fabricated by evaporating 100 nm of copper at a rate of [missing information].

[0060] Figure 3 The current-voltage graph of the high open-circuit voltage wide bandgap perovskite solar cell provided in Embodiment 3 of the present application has a horizontal coordinate of voltage (unit: V) and a vertical coordinate of current density (unit: mA / cm 2 Figure 3 It can be seen that the open-circuit voltage of the wide bandgap perovskite solar cell prepared in the present application reaches 1.32 V, which has the advantage of high open-circuit voltage.

[0061] Embodiment 4

[0062] Embodiment 4 of the present application is another preparation process of a high open-circuit voltage wide bandgap perovskite solar cell provided by the present application, and the specific steps are as follows:

[0063] SB1, pretreatment of the substrate: sequentially place the ITO substrate 1 into glass cleaning agent Decon-90, deionized water, acetone, and ethanol for ultrasonic cleaning, then blow dry the substrate with nitrogen, and place it in a UV ozone cleaning machine for 30 min to obtain the pretreated ITO substrate 1;

[0064] Specifically, the cleaning temperature of ultrasonic cleaning is 60℃, and the time of three times of ultrasonic cleaning is 30 min.

[0065] SB2, preparation of the hole transport layer 2: dissolve 2 mg of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] in 1 mL of toluene, stir for 2 h to obtain a PTAA precursor solution, then spin-coat the PTAA precursor solution on the pretreated ITO substrate 1, and anneal on a 100℃ hot stage for 10 min to obtain a hole transport layer 2 using PTAA;

[0066] SB3, preparation of the aluminum oxide thin layer 3: use an atomic layer deposition device to prepare the aluminum oxide thin layer 3, under the conditions of a temperature of 150℃, a flow rate of N2 of 12 sccm, a gas pressure of 0.3 Torr, an aluminum source pulse of 0.1 s, and an oxygen source pulse of 0.3 s to deposit 3 nm of aluminum oxide;

[0067] SB4, preparation of the perovskite light-absorbing layer 4: weigh 151.34 mg of formamidinium hydriodide, 57.15 mg of cesium iodide, 202.84 mg of lead iodide, and 242.22 mg of lead bromide, and dissolve them in 1 mL of a solution with a volume ratio of DMF:1-methyl-2-pyrrolidinone (NMP) = 4:1, and stir for 12 h to obtain a perovskite Cs 0.2 FA 0.8 PbI 1.8 Br 1.2 ​The precursor solution. 80ul of perovskite precursor solution was dropped on the center of the alumina thin layer 3, and spin-coated at 1000r / min for 5s, and then accelerated to 5000r / min for 45s, and then placed on a hot stage, annealed at 100℃ for 30min to obtain a dense peroviskite light-absorbing layer 4;

[0068] SB5, preparation of the electron transport layer 5: 20mg of [6,6]-phenyl C 61 The methyl butyrate material was dissolved in 1mL of chlorobenzene solution, stirred for 12h to obtain a PCBM precursor solution, and 70ul of the PCBM precursor solution was spin-coated on the peroviskite light-absorbing layer 4 as the electron transport layer 5 at 2000r / min for 30s;

[0069] SB6, preparation of the interface modification layer 6: 0.5mg of bathocuproine material was dissolved in 1mL of isopropanol solution, stirred for 12h to obtain a BCP precursor solution, and spin-coated on the electron transport layer 5 as the interface modification layer 6 at 6000r / min for 30s;

[0070] SB7, preparation of the metal electrode 7: 100nm of copper was evaporated at a rate of 0.1nm / s under a vacuum degree of 5x10 -4 Pa, and 100nm of copper was evaporated at a rate of 0.1nm / s under a vacuum degree of 5x10 to prepare the wide-bandgap peroviskite solar cell.

[0071] Figure 4 The current-voltage graph of the high open-circuit voltage wide-bandgap peroviskite solar cell provided in Embodiment 4 of the present application, the abscissa is voltage (unit: V), and the ordinate is current density (unit: mA / cm 2 ), and it can be seen that the open-circuit voltage of the wide-bandgap peroviskite solar cell reaches 1.33V, which has the advantage of high open-circuit voltage. Figure 4

[0072] Embodiment 5

[0073] Embodiment 5 of the present application is another preparation process of the high open-circuit voltage wide-bandgap peroviskite solar cell provided by the present application, and the specific steps are as follows:

[0074] SC1, pretreatment of the substrate: the ITO substrate 1 was sequentially placed in glass cleaning agent Decon-90, deionized water, acetone and ethanol for ultrasonic cleaning, and then the substrate was blown dry by nitrogen, and placed in a ultraviolet ozone cleaning machine for treatment for 30min to obtain the pretreated ITO substrate 1;

[0075] Specifically, the cleaning temperature of ultrasonic cleaning is 60℃, and the time of three times of ultrasonic cleaning is 30min.

[0076] ​SC2, Preparation of hole transport layer 2: 2mg poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] was dissolved in 1mL of toluene, stirred for 2h to obtain PTAA precursor solution, 7.8ul PTAA precursor solution was coated on the pretreated ITO substrate 1 with a gap of 200um and a speed of 20mm / s, to obtain PTAA hole transport layer 2;

[0077] SC3, Preparation of aluminum oxide thin layer 3: aluminum oxide thin layer 3 was prepared by atomic layer deposition equipment, under the conditions of temperature 150℃, N2 flow rate 12sccm, gas pressure 0.3Torr, aluminum source pulse 0.1s, oxygen source pulse 0.3s, to deposit 3nm of aluminum oxide;

[0078] SC4, Preparation of perovskite light absorbing layer 4: 151.34mg formamidinium iodide (FAI), 57.15mg cesium iodide (CsI), 278.91mg lead iodide (PbI2) and 181.66 lead bromide (PbBr2) were dissolved in 1ml DMF solution, stirred for 12h to obtain perovskite Cs 0.2 FA 0.8 PbI 2.1 Br 0.9 precursor solution. 9ul perovskite precursor solution was coated at a gap of 200um and a speed of 20mm / s under the condition of nitrogen 20psi, and then placed on a hot stage, annealed at 100℃ for 30min to obtain a dense perovskite light absorbing layer 4;

[0079] SC5: Preparation of electron transport layer 5: 20mg [6,6]-phenyl C 61 butyric acid methyl ester material was dissolved in 1mL of chlorobenzene solution, stirred for 12h to obtain PCBM precursor solution, 70ul PCBM precursor solution was spin-coated on the perovskite light absorbing layer 4 as electron transport layer 5 at 2000rpm for 30s;

[0080] SC6: Preparation of interface modification layer 6: 0.5mg bathocuproin material was dissolved in 1mL of isopropanol solution, stirred for 12h to obtain bathocuproin precursor solution, spin-coated on the electron transport layer 5 as interface modification layer 6 at 6000rpm for 30s;

[0081] SC7: Preparation of metal electrode 7: 100nm of copper was evaporated at a rate of 5×10 -4 Pa below by using a vacuum coating instrument to prepare a wide band gap perovskite solar cell.

[0082] Figure 5 ​The current-voltage graph of the high open-circuit voltage wide bandgap perovskite solar cell provided in Embodiment 5 of the present application has a horizontal coordinate of voltage (unit: V) and a vertical coordinate of current density (unit: mA / cm 2 ), from Figure 5 which it can be seen that the open-circuit voltage of the wide bandgap perovskite solar cell reaches 1.28 V, having the advantage of high open-circuit voltage.

Claims

1. A high open-circuit voltage wide bandgap perovskite solar cell, characterized in that, From bottom to top, it includes an ITO substrate (1), a hole transport layer (2), an alumina thin layer (3), a perovskite light-absorbing layer (4), an electron transport layer (5), an interface modification layer (6), and a metal electrode (7), wherein the alumina thin layer (3) is located between the hole transport layer (2) and the perovskite light-absorbing layer (4). The hole transport layer (2) is a poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] material, the perovskite light-absorbing layer (4) is a Cs x FA 1-x PbI 1-y Br y component, the perovskite light-absorbing layer (4) is formed by any one of a doctor blade method, a one-step method, a two-step method, the electron transport layer (5) is a [6,6]-phenyl C 61 butyric acid methyl ester material, and the interface modification layer (6) is a bathocuproine material.

2. The high open-circuit voltage wide-bandgap perovskite solar cell according to claim 1, characterized in that, The ITO substrate (1) is a 150nm ITO electrode deposited on a 1.1 mm glass.

3. The high open-circuit voltage wide-bandgap perovskite solar cell according to claim 1, characterized in that, The alumina thin layer (3) is prepared using an atomic layer deposition device and has a thickness of 2-3 nm.

4. The high open-circuit voltage wide-bandgap perovskite solar cell according to claim 1, characterized in that, The metal electrode (7) is made of any one of Au, Ag, or Cu, and the thickness of the metal electrode (7) is 100 nm.

5. A method for fabricating a high open-circuit voltage, wide-bandgap perovskite solar cell, characterized in that, The method for preparing a high open-circuit voltage wide-bandgap perovskite solar cell according to any one of claims 1 to 4 includes: pretreating an ITO substrate and preparing a hole transport layer on the ITO substrate; An alumina thin layer is prepared on the hole transport layer; A perovskite light-absorbing layer is prepared on the thin layer of aluminum oxide, wherein the perovskite light-absorbing layer is Cs x FA 1-x PbI 1-y Br y ; The prepared [6,6]-phenyl C 61 A methyl butyrate material precursor solution is spin-coated on the perovskite light-absorbing layer to form an electron transport layer; The prepared copper bath precursor solution was spin-coated onto the electron transport layer to form an interface modification layer. A metal electrode is deposited on the interface modification layer.

6. The method for preparing a high open-circuit voltage wide-bandgap perovskite solar cell according to claim 5, characterized in that, The preparation of the alumina thin layer on the hole transport layer includes: Under conditions of 150℃, N2 flow rate of 12 sccm, and gas pressure of 0.3 Torr, aluminum source pulse of 0.1s and oxygen source pulse of 0.3s were used to deposit 3nm of aluminum oxide.

Images