Electronic device

Abstract

The present disclosure provides an electronic device, comprising a first substrate, a second substrate, a first conductive component, an insulating layer, a first electronic component, and a dielectric structure, the second substrate is disposed opposite to the first substrate, the first conductive component is disposed on the first substrate, the insulating layer is disposed on the first conductive component and has a first via, the first electronic component is disposed on the insulating layer and electrically connected to the first conductive component through the first via, the dielectric structure is disposed between the first substrate and the second substrate, and the dielectric structure has a first portion and a second portion, the first portion overlaps the first via, the second portion is adjacent to the first portion, and the thickness of the first portion is greater than the thickness of the second portion.

Description

Technical Field

[0001] This disclosure relates to electronic devices, and more particularly to electronic devices having a dielectric structure that can improve optical properties. Background Technology

[0002] Electronic products, including display panels, such as tablets, laptops, smartphones, monitors, and televisions, have become indispensable necessities in modern society. With the booming development of these portable electronic products, consumers have high expectations for their quality, functionality, and price.

[0003] In response to the demands of production costs and changing product applications, the manufacturing technology for light-emitting components used in electronic devices (e.g., display panels) has continuously evolved. In recent years, printing technology (e.g., ink-jet printing, IJP) has also begun to be applied to the manufacturing process of light-emitting components due to its suitability for large-area, customized manufacturing and relatively simple processes. However, light-emitting components manufactured using printing technology suffer from problems such as poor thickness uniformity, which affects optical performance.

[0004] As mentioned above, existing electronic devices that include display panels still do not meet the requirements in all aspects. Therefore, developing structural designs that can further improve the performance of electronic devices remains one of the topics that the industry is currently focusing on researching. Summary of the Invention

[0005] According to some embodiments of this disclosure, an electronic device is provided, comprising a first substrate, a second substrate, a first conductive component, an insulating layer, a first electronic component, and a dielectric structure. The second substrate is disposed opposite to the first substrate. The first conductive component is disposed on the first substrate. The insulating layer is disposed on the first conductive component and has a first via. The first electronic component is disposed on the insulating layer and electrically connected to the first conductive component through the first via. The dielectric structure is disposed between the first substrate and the second substrate, and the dielectric structure has a first portion and a second portion. The first portion overlaps with the first via, the second portion is adjacent to the first portion, and the thickness of the first portion is greater than the thickness of the second portion. Attached Figure Description

[0006] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings, wherein:

[0007] Figure 1 This is a schematic cross-sectional view of the electronic device in some embodiments of this disclosure;

[0008] Figure 2 This is a partial structural schematic diagram of the electronic device in some embodiments of this disclosure;

[0009] Figure 3A This is a partial cross-sectional structural diagram of the electronic device in some embodiments of this disclosure;

[0010] Figure 3B For some embodiments of this disclosure Figure 3A A magnified structural diagram of region R in the diagram;

[0011] Figure 4 This is a partial structural schematic diagram of the electronic device in some embodiments of this disclosure;

[0012] Figure 5 This is a partial top view schematic diagram of the electronic device in some embodiments of this disclosure;

[0013] Figure 6 For some embodiments of this disclosure, corresponding to Figure 5 A schematic diagram of the cross-sectional structure of an electronic device with a cross section Q-Q';

[0014] Figure 7A as well as Figure 7B This is a schematic diagram showing the results of optical simulation of an electronic device in some embodiments of this disclosure.

[0015] Figure 1-7B The annotations in the attached figures are explained as follows:

[0016] 10: Electronic devices

[0017] 100: Display substrate

[0018] 102: First substrate

[0019] 104: Circuit Layer

[0020] 104a, 104b: Conductive components

[0021] 104s: Semiconductor layer

[0022] 106: Insulation layer

[0023] 110: Embankment

[0024] 110P: Convex profile

[0025] 200: Color filter substrate

[0026] 202: Second substrate

[0027] 204: Color filter layer

[0028] 204R: Recessed structure

[0029] 206: Light-shielding layer

[0030] 300, 300-1, 300-2: Electronic Components

[0031] 302a, 302a-1, 302a-2: Anode

[0032] 304: Emissive layer

[0033] 302b: Cathode

[0034] 400: Medium Structure

[0035] 400R: Groove

[0036] 402: First Floor

[0037] 404: Second layer

[0038] A1: First area

[0039] A2: Second area

[0040] A3: Third area

[0041] A4: Fourth area

[0042] CS: Surface

[0043] DL: Data cable

[0044] EM: Control signal line

[0045] n, n1, n2, n3: Refractive index

[0046] OA1: First overlapping region

[0047] OA2: Second overlapping region

[0048] P1: Part 1

[0049] P2: Part Two

[0050] P3: Part Three

[0051] Q-Q': Cut-off wire

[0052] R: Region

[0053] S1: First focusing surface

[0054] S2: Second focusing surface

[0055] SL: Scan line

[0056] T1, T2, T3, T4: Thickness

[0057] V1, V2: Through holes

[0058] Vcc: System voltage line

[0059] Vdd: Working voltage line

[0060] Vini: Initialize voltage lines

[0061] W1, W2, W3, W4: Width Detailed Implementation

[0062] The following provides a detailed description of an electronic device based on embodiments of the present disclosure. It should be understood that the following description provides many different embodiments for implementing various forms of some embodiments of the present disclosure. The specific components and arrangements described below are merely for simple and clear description of some embodiments of the present disclosure. Of course, these are merely examples and not intended to limit the present disclosure. Furthermore, similar and / or corresponding reference numerals may be used in different embodiments to identify similar and / or corresponding components for clear description of the present disclosure. However, the use of these similar and / or corresponding reference numerals is merely for simple and clear description of some embodiments of the present disclosure and does not imply any association between the different embodiments and / or structures discussed.

[0063] It should be understood that relative terms, such as "lower," "bottom," "higher," or "top," may be used in the embodiments to describe the relative relationship of one component of the figures to another. It is understood that if the apparatus in the figures is flipped upside down, the component described as being on the "lower" side will become the component on the "higher" side. Embodiments of this disclosure can be used in conjunction with the accompanying drawings. Figure 1 It should be understood that the accompanying drawings of this disclosure are also considered part of the disclosure. It should be understood that the drawings of this disclosure are not drawn to scale, and in fact, the dimensions of components may be arbitrarily enlarged or reduced to clearly show the features of this disclosure.

[0064] Furthermore, when it is mentioned that a first material layer is located on or above a second material layer, it may include situations where the first material layer and the second material layer are in direct contact, or situations where the first material layer and the second material layer are not in direct contact, that is, situations where there may be one or more other material layers between the first material layer and the second material layer. However, if the first material layer is located directly on the second material layer, it indicates that the first material layer and the second material layer are in direct contact.

[0065] Furthermore, it should be understood that the ordinal numbers used in the specification and claims, such as "first" and "second," to modify components do not inherently imply any prior ordinal number for that (or the plurality of) components, nor do they represent the order of one component with another, or the order of manufacturing processes. The use of these ordinal numbers is solely to clearly distinguish one named component from another component with the same name. The claims and specification may not use the same terminology; for example, the first component in the specification may be the second component in the claims.

[0066] In some embodiments of this disclosure, terms such as "connection" and "interconnection," unless specifically defined, may refer to two structures being in direct contact, or to two structures not being in direct contact, wherein another structure is disposed between the two structures. Furthermore, these terms regarding engagement and connection may also include cases where both structures are movable or both structures are fixed. In addition, the terms "electrical connection" or "electrical coupling" include any direct and indirect electrical connection means.

[0067] In this text, the terms "about" and "substantially" typically indicate that a given value or range is within 10%, 5%, 3%, 2%, 1%, or 0.5%. The phrase "range between a first value and a second value" indicates that the range includes the first value, the second value, and other values ​​in between.

[0068] It should be understood that the features described below can be replaced, reorganized, or combined in several different embodiments to complete other embodiments without departing from the spirit of this disclosure. Features between embodiments can be arbitrarily mixed and matched as long as they do not violate the spirit of the invention or conflict with it.

[0069] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It is understood that such terms, for example, as defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in embodiments of this disclosure.

[0070] According to embodiments of this disclosure, an electronic device is provided having a dielectric structure with a specific structural design that can improve the optical performance of the electronic device (e.g., increase luminous intensity) or the strength or reliability of the overall structure.

[0071] According to embodiments of this disclosure, the electronic device may include a display device, a backlight device, a sensing device, or a splicing device, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The display device may be a non-emissive display device or a self-emissive display device. The sensing device may be a sensing device that senses capacitance, light, heat, or ultrasound, but is not limited thereto. Electronic components may include passive and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. Diodes may include light-emitting diodes or photodiodes. Light-emitting diodes may include, for example, organic light-emitting diodes (OLEDs), mini LEDs, micro LEDs, or quantum dot LEDs, but are not limited thereto. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device may be any combination of the foregoing, but is not limited thereto. The following description uses a display device as an example of an electronic device to illustrate the content of this disclosure, but this disclosure is not limited thereto.

[0072] Please refer to Figure 1 , Figure 1 The figures show a cross-sectional view of the electronic device 10 according to some embodiments of the present disclosure. It should be understood that, for clarity, some components of the electronic device 10 are omitted from the accompanying drawings, and only some components are schematically shown. According to some embodiments, additional features may be added to the electronic device 10 described below. According to other embodiments, some features of the electronic device 10 described below may be replaced or omitted.

[0073] The electronic device 10 may include a display substrate 100, a color filter substrate 200, and a dielectric structure 400 disposed between the display substrate 100 and the color filter substrate 200. The display substrate 100 may include a first substrate 102, a circuit layer 104, and an electronic component 300. The circuit layer 104 may be disposed on the first substrate 102, and the electronic component 300 may be disposed on the circuit layer 104, and the electronic component 300 is electrically connected to the circuit layer 104. Furthermore, the color filter substrate 200 may include a second substrate 202 and a color filter layer 204. The second substrate 202 is disposed opposite to the first substrate 102, and the color filter layer 204 is disposed between the second substrate 202 and the dielectric structure 400.

[0074] The first substrate 102 and the second substrate 202 can serve as the substrates of the display substrate 100 and the color filter substrate 200, respectively. The first substrate 102 and the second substrate 202 can comprise rigid substrates or flexible substrates. According to some embodiments, the materials of the first substrate 102 and the second substrate 202 may include glass, quartz, sapphire, polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polydimethylsiloxane (PDMS), other suitable materials, or combinations thereof, but are not limited thereto. Furthermore, the material of the first substrate 102 may be the same as or different from the material of the second substrate 202.

[0075] Circuit layer 104 may include driving circuitry, which may include active driving circuitry and / or passive driving circuitry. According to some embodiments, the driving circuitry may include, but is not limited to, thin-film transistors (TFTs) (e.g., switching transistors, driving transistors, reset transistors, or other thin-film transistors), data lines, scan lines, conductive pads, dielectric layers, capacitors, or other lines. Furthermore, the thin-film transistor may be a top-gate thin-film transistor, a bottom-gate thin-film transistor, or a dual-gate or double-gate thin-film transistor. The thin-film transistor includes at least one semiconductor layer, which includes, but is not limited to, amorphous silicon, low-temp polysilicon (LTPS), metal oxides, other suitable materials, or combinations thereof. The metal oxide may include indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), indium gallium zinc tin oxide (IGZTO), other suitable materials, or combinations thereof.

[0076] In detail, according to some embodiments, circuit layer 104 may include conductive component 104a (such as... Figure 6 (as shown) and insulating layer 106 (as shown) Figure 6 As shown), the conductive component 104a and the insulating layer 106 can be conductive components and insulating components in a driving circuit. The conductive component 104a can be disposed on the first substrate 102. Furthermore, the insulating layer 106 can be disposed on the conductive component 104a and has a through hole V1 (as shown). Figure 6As shown, electronic component 300 can be disposed on insulating layer 106 and electrically connected to conductive component 104a via through-hole V1. Figure 6 (Not shown in the image). According to some embodiments, the material of the insulating layer may include, for example, silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiOxNy), epoxy resin, acrylic, bismaleimide, polyimide, or combinations thereof, but is not limited thereto. Detailed structures of the circuit layer 104 and electronic component 300 will be further described below.

[0077] In this disclosure, electronic component 300 may be a light-emitting component. According to some embodiments, the light-emitting component may include a light-emitting diode (LED), which may include, for example, an organic light-emitting diode, a sub-millimeter LED, a micro LED, or a quantum dot LED (e.g., a QLED or QDLED), other suitable light-emitting units, or combinations thereof, but is not limited thereto. According to some embodiments, electronic component 300 may be an organic light-emitting diode.

[0078] According to some embodiments, the electronic component 300 may include, for example, an anode 302a, a cathode 302b, and a light-emitting layer 304, but this disclosure is not limited thereto. The anode 302a may be disposed between the circuit layer 104 and the light-emitting layer 304, and the anode 302a may be electrically connected to the conductive component 104a of the circuit layer 104 via the aforementioned via V1. The cathode 302b may be disposed between the light-emitting layer 304 and the dielectric structure 400; furthermore, the light-emitting layer 304 may be disposed between the anode 302a and the cathode 302b. According to other embodiments, the cathode 302b may be at least partially disposed on the embankment layer 110, but this is not limited thereto.

[0079] According to some embodiments, the materials of the anode 302a, cathode 302b, and conductive component 104a may include metallic conductive materials, transparent conductive materials, other suitable materials, or combinations thereof, but are not limited thereto. Metallic conductive materials may include, for example, copper (Cu), aluminum (Al), indium (In), ruthenium (Ru), tin (Sn), gold (Au), platinum (Pt), molybdenum (Mo), zinc (Zn), silver (Ag), titanium (Ti), lead (Pb), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), magnesium (Mg), palladium (Pd), lithium (Li), calcium (Ca), alloys of the aforementioned metals, other suitable metallic materials, or combinations thereof, but are not limited thereto. The transparent conductive material may include, for example, transparent conductive oxides (TCOs), such as indium tin oxide (ITO), antimony zinc oxide (AZO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), other suitable transparent conductive materials, or combinations thereof, but not limited to these. Furthermore, the anode 302a and cathode 302b may have a single-layer or multi-layer structure.

[0080] According to some embodiments, the light-emitting layer 304 may include a charge generation layer (not shown), a hole transport layer (not shown), an electron transport layer (not shown), an organic light-emitting layer (not shown) disposed between the hole transport layer and the hole injection layer, and an additive material (not shown) to improve electron and hole transport, but is not limited thereto. According to some embodiments, the light-emitting layer 304 of the electronic component 300 may be formed by an inkjet printing process, but this disclosure is not limited thereto.

[0081] It should be understood that, depending on the different embodiments, the electronic component 300 may have other suitable structures, and the structure of the electronic component 300 is not limited to the aforementioned structure of the light-emitting component.

[0082] In addition, such as Figure 1As shown, according to some embodiments, the electronic device 10 may include a bank layer 110, which may be disposed on the circuit layer 104, for example, on the insulating layer 106 of the circuit layer 104. According to some embodiments, the bank layer 110 is disposed on the anode 302a of the electronic component 300, and the cathode 302b and the light-emitting layer 304 may be disposed between two adjacent bank layers 110.

[0083] According to some embodiments, the dam layer 110 may be formed of a light-absorbing material, such as a material with a transmittance of less than 30%, which can reduce light mixing between adjacent electronic components 300. According to some embodiments, the dam layer 110 may be formed of a light-reflecting material, such as a material with a reflectance greater than 30%, which can increase the light output of the electronic component 300 and improve light utilization. According to some embodiments, the dam layer 110 may be formed of a transparent material, which can reduce the influence of material resistance on the electronic component 300. Specifically, according to some embodiments, the material of the dam layer 110 may include organic materials, glass paste, other suitable materials, or combinations thereof, but is not limited thereto. Organic materials may include, for example, epoxy resins, acrylic resins such as polymethyl methacrylate (PMMA), phenolic resins, polyamide resins, polyimide resins, unsaturated polyester resins, polyphenylene ether resins, polyphenylene sulfide resins, benzocyclobutene (BCB), other suitable materials, or combinations thereof, but are not limited thereto. According to some embodiments, the material of the embankment 110 may include black or white photoresist.

[0084] As described above, the color filter substrate 200 may include a second substrate 202 and a color filter layer 204, which may be disposed between the second substrate 202 and the dielectric structure 400. The color filter layer 204 may filter or adjust the optical properties of light passing through it, for example, allowing light within a specific wavelength range to pass through. According to some embodiments, the color filter layer 204 may include red filter units, green filter units, blue filter units, white filter units, or filter units of other colors, but is not limited thereto. According to different embodiments, the color filter layer 204 may have any suitable number or color of color filter units.

[0085] According to some embodiments, the material of the color filter layer 204 may include a color photoresist, which may, for example, include a polymer material and pigments and photosensitive materials dispersed therein. According to some embodiments, the aforementioned polymer material may include epoxy resin, acrylic resin such as polymethyl methacrylate (PMMA), benzocyclobutene (BCB), other suitable materials, or combinations thereof, but is not limited thereto.

[0086] According to some embodiments, the color filter substrate 200 may further include a light-shielding layer 206, which may be disposed on the second substrate 202 and located between the second substrate 202 and the color filter layer 204. Viewed from the light-emitting surface of the electronic device 10 (e.g., the XY plane in the figures), the light-shielding layer 206 may have multiple openings, and the openings of the color filter layer 204 overlap with those of the light-shielding layer 206. Furthermore, according to some embodiments, in the normal direction of the first substrate 102 (e.g., the Z direction in the figures), the light-shielding layer 206 may at least partially overlap with the dam layer 110.

[0087] According to some embodiments, the material of the light-shielding layer 206 may include black photoresist, black printing ink, black resin, metal, carbon black material, resin material, photosensitive material, other suitable materials, or combinations thereof, but is not limited thereto.

[0088] As mentioned above, the dielectric structure 400 can be disposed between the first substrate 102 and the second substrate 202. For example... Figure 1 As shown, according to some embodiments, the dielectric structure 400 may be disposed between the color filter layer 204 and the electronic component 300, and the dielectric structure 400 may abut against the dam layer 110. The dielectric structure 400 may have optical adjustment characteristics, protective functions (e.g., waterproof and moisture-proof), or may serve as a snap-fit ​​structure.

[0089] For more details, please refer to the following: Figure 1 as well as Figure 2 , Figure 2 The diagram shown illustrates a partial structural design of the electronic device 10 according to some embodiments of the present disclosure. It should be understood that this is for clarity. Figure 2 The display substrate 100 is presented from the perspective of the top view, while the color filter substrate 200 is presented from the perspective of a cross-sectional view, showing the engagement state of the display substrate 100 and the color filter substrate 200. Furthermore, Figure 2 Displays the area corresponding to the two electronic components 300 (e.g., two pixels) of the electronic device 10.

[0090] like Figure 2As shown, the thickness of the dielectric structure 400 can be inconsistent; for example, the dielectric structure 400 corresponding to different regions of the display substrate 100 can have different thicknesses. Specifically, within a pixel region, the dielectric structure 400 can be divided into two parts. For example, the dielectric structure 400 can have a first part P1 and a second part P2. In the normal direction of the first substrate 102, the first part P1 overlaps with the via V1, and the second part P2 is adjacent to the first part P1. The thickness T1 of the first part P1 is greater than the thickness T2 of the second part P2. That is, the dielectric structure 400 has a larger thickness in the portion overlapping with the via V1. As mentioned above, the via V1 can electrically connect the anode 302a of the electronic component 300 to the conductive component 104a of the circuit layer 104. Furthermore, according to some embodiments, in the normal direction of the first substrate 102, the second part P2 does not overlap with the embankment layer 110. According to some embodiments, the first part P1 of the dielectric structure 400 has a curved surface CS. Furthermore, according to some embodiments, the second part P2 has a flatter shape compared to the first part P1.

[0091] According to some embodiments, the thickness T1 of the first portion P1 may be between 9 μm and 21 μm (i.e., 9 μm ≤ thickness T1 ≤ 21 μm), for example, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm or 18 μm, but is not limited thereto. The thickness T2 of the second portion P2 may be between 8 μm and 18 μm (i.e., 8 μm ≤ thickness T2 ≤ 18 μm), for example, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm or 18 μm, but is not limited thereto.

[0092] According to some embodiments of this disclosure, the first portion P1 of the dielectric structure 400 refers to a region with a radius of 10 micrometers (μm) defined centered on the maximum thickness within a pixel region. Furthermore, thickness T1 refers to the maximum thickness of the first portion P1 of the dielectric structure 400 within a pixel region, in the normal direction of the first substrate 102 (e.g., the Z direction in the figures). Thickness T2 refers to the maximum thickness of the second portion P2 of the dielectric structure 400 within a pixel region, in the normal direction of the first substrate 102 (e.g., the Z direction in the figures).

[0093] It should be understood that, according to embodiments of this disclosure, the thickness, width, or height of each component, or the spacing or distance between components, can be measured using an optical microscope (OM), a scanning electron microscope (SEM), an α-step thickness profiler, an ellipsometry, a focused ion beam (FIB) microscope, a transmission electron microscope (TEM), or other suitable methods. More specifically, according to some embodiments, a scanning electron microscope can be used to obtain a cross-sectional image containing the components to be measured, and the thickness, width, or height of each component, or the spacing or distance between components, can be measured.

[0094] It is worth noting that, according to some embodiments, since the electronic component 300 is formed by inkjet printing, the ink has fluidity, so a thicker layer of ink will accumulate at the location corresponding to the via V1, which will affect the luminous efficiency of the electronic component 300. However, by means of the aforementioned dielectric structure 400 having a larger thickness in the portion overlapping with the via V1, the light gathering effect can be improved, effectively enhancing the overall output light efficiency of the electronic component 300.

[0095] In addition, such as Figure 2 As shown, according to some embodiments, the dielectric structure 400 may be a multilayer structure. For example, the dielectric structure 400 may have a first layer 402 and a second layer 404, with the first layer 402 disposed between the second substrate 202 and the second layer 404. For more details, please refer to... Figure 3A as well as Figure 3B , Figure 3A This diagram shows a partial cross-sectional view of the color filter substrate 200 of the electronic device 10 according to some embodiments of the present disclosure. Figure 3B show Figure 3A A magnified structural diagram of region R in the diagram.

[0096] According to some embodiments, the first layer 402 of the dielectric structure 400 has a thickness T3, and the second layer 404 has a thickness T4, wherein the thickness T3 of the first layer 402 is greater than the thickness T4 of the second layer 404. Specifically, according to some embodiments, the thickness T3 of the first layer 402 may be between 4 μm and 12 μm (i.e., 4 μm ≤ thickness T3 ≤ 12 μm), and the thickness T4 of the second layer 404 may be between 5 μm and 9 μm (i.e., 5 μm ≤ thickness T4 ≤ 9 μm).

[0097] According to some embodiments of this disclosure, thickness T3 refers to the maximum thickness of the first layer 402 of the dielectric structure 400 in a pixel region along the normal direction of the first substrate 102 (e.g., the Z direction in the figures), while thickness T4 refers to the thickness of the second layer 404 of the dielectric structure 400 along an extension line where the first layer 402 has the maximum thickness. According to some embodiments, the thickness T1 of the dielectric structure 400 can also be measured along an extension line where the first layer 402 has the maximum thickness, but this is not a limitation.

[0098] Furthermore, such as Figure 3B As shown, according to some embodiments, the first layer 402 of the dielectric structure 400 may have a first focusing surface S1, and the second layer 404 may have a second focusing surface S2. It is worth noting that the multilayer dielectric structure 400 may have multiple focusing surfaces, thereby further enhancing the focusing effect and increasing the light output brightness of the electronic component 300. Furthermore, the first layer 402 may have a refractive index n3, and the second layer 404 may have a refractive index n2. According to some embodiments, the refractive index n3 of the first layer 402 and the refractive index n2 of the second layer 404 are greater than the refractive index n1 of the cathode 302b. According to some embodiments, the refractive index n2 of the second layer 404 may be less than the refractive index n3 of the first layer 402, but is not limited thereto. Furthermore, according to some embodiments, the transmittance of the dielectric structure 400 may be between 80% and 99%.

[0099] The "transmittance" described in this disclosure refers to the percentage of the light intensity of transmitted light measured after the light source passes through a component, structure, or material, divided by the light intensity measured when the light source does not pass through the component, structure, or material. The light intensity described in this disclosure refers to the spectral integral value of a light source (which may include, for example, display light or ambient light). The light source may include, for example, visible light (e.g., wavelengths between 380 nm and 780 nm), but is not limited thereto. For example, when the light source is visible light, the light intensity is the spectral integral value in the wavelength range of 380 nm to 780 nm, and the transmittance of the dielectric structure 400 is the percentage of the visible light spectral integral value measured after the light source passes through the dielectric structure 400, divided by the visible light spectral integral value measured when the light source does not pass through the dielectric structure 400.

[0100] According to some embodiments, the dielectric structure 400 may include an organic material layer, such as polycarbonate (PC), polymethylmethacrylate (PMMA), polyethylene terephthalate (PET), polyethylene (PE), polyethersulfone (PES), polyimide (PI), polydimethylsiloxane (PDMS), other suitable organic materials, or combinations thereof, but not limited thereto. According to some embodiments, the dielectric structure 400 may include an adhesive layer, such as optically clear adhesive (OCA), optically clear resin (OCR), pressure-sensitive adhesive (PSA), acrylic adhesive, acrylic resin, other suitable materials, or combinations thereof, but not limited thereto. According to some embodiments, the first layer 402 of the dielectric structure 400 is an organic material layer, and the second layer 404 is an adhesive layer, but this disclosure is not limited thereto.

[0101] It should be understood that although the illustrated embodiment shows the dielectric structure 400 as a two-layer structure, the dielectric structure 400 may have other suitable numbers of layers, such as 3, 4, 5, 6, 7, 8, etc., depending on the embodiment. Furthermore, the stacking order of the organic material layers and adhesive layers in the dielectric structure 400 can also be adjusted as needed.

[0102] Next, please refer to Figure 1 as well as Figure 4 , Figure 4 The diagram shows a partial structural schematic of the display substrate 100 of the electronic device 10 according to some embodiments of the present disclosure. According to some embodiments, the dam layer 110 has a strip structure, and the dam layer 110 may have a convex profile 110P; more specifically, the top portion of the dam layer 110 may have a convex profile 110P. According to some embodiments, the convex profile 110P may abut against a dielectric structure 400, and the dielectric structure 400 may partially surround the convex profile 110P.

[0103] In particular, the convex profile 110P has a locking function, which can help the display substrate 100 and the color filter substrate 200 to align, reducing the risk of the dielectric structure 400 being misaligned (for example, the first part P1 is misaligned and does not overlap with the via V1, or the structural center of the dielectric structure 400 is misaligned with the structural center of the electronic component 300). In this way, the overall output light efficiency of the electronic component 300 can also be improved.

[0104] Furthermore, such as Figure 1 As shown, according to some embodiments, the dielectric structure 400 may have a groove 400R in the normal direction of the first substrate 102 (e.g., the Z direction in the figures), and the groove 400R may overlap with the dam layer 110. More specifically, the groove 400R may engage with the convex profile 110P of the dam layer 110, allowing the dielectric structure 400 and the dam layer 110 to be more tightly aligned and engaged, further improving the substrate alignment accuracy of the electronic device 10. According to some embodiments, the shapes of the groove 400R and the convex profile 110P are complementary.

[0105] In addition, please refer to Figure 1 According to some embodiments, the color filter layer 204 has a pitting structure 204R, and the third portion P3 of the dielectric structure 400 may be disposed in the pitting structure 204R. According to some embodiments, in the normal direction of the first substrate 102 (e.g., the Z direction in the figures), the pitting structure 204R of the color filter layer 204 overlaps with the light-shielding layer 206; in other words, the third portion P3 of the dielectric structure 400 also overlaps with the light-shielding layer 206.

[0106] According to some embodiments, the third portion P3 of the dielectric structure 400 may be a convex structure. Specifically, the convex third portion P3 can engage with the recessed structure 204R, assisting in the alignment of the dielectric structure 400 and the color filter layer 204, reducing the risk of misalignment of the dielectric structure 400 or the color filter layer 204. Furthermore, according to some embodiments, the shapes of the dielectric structure 400 and the color filter layer 204 are complementary.

[0107] Next, please refer to Figure 5 as well as Figure 6 , Figure 5 The diagram shows a partial top view of the electronic device 10 according to some embodiments of the present disclosure. Figure 6 According to some embodiments of this disclosure, corresponding to Figure 5 A cross-sectional structural diagram of the electronic device 10 with cross-section Q-Q'. Specifically, Figure 5 The diagram shows the top view of the circuit layer 104 and the electronic components 300.

[0108] like Figure 5As shown, the circuit layer 104 of the electronic device 10 may include multiple scan lines SL and multiple data lines DL. According to some embodiments, the scan lines SL and data lines DL interleave to define multiple pixel regions, each pixel region potentially containing multiple thin-film transistors and electronic components 300. According to some embodiments, the circuit layer 104 may further include a system voltage line Vcc, an operating voltage line Vdd, an initialization voltage line Vini, and a control signal line EM, but is not limited thereto. The signal lines, voltage lines, etc., in the circuit layer 104 can work together to control and adjust the electronic components 300.

[0109] In detail, the scan line SL and data line DL provide a signal to turn on the gate switch of the driving thin-film transistor, causing the current of the operating voltage line Vdd to flow through the electronic component 300 to form a current loop. The electronic component 300 converts electrical energy into light energy, causing the light-emitting layer 304 to output a light source. Furthermore, the scan line SL and data line DL can extend along the X or Y direction respectively to alternately configure the circuit layer 104. The operating voltage line Vdd and system voltage line Vcc can also extend along the X or Y direction respectively to alternately configure the circuit layer 104. The configuration direction of the operating voltage line Vdd can be the same as the configuration direction of the scan line SL, and the configuration direction of the system voltage line Vcc can be the same as the configuration direction of the data line DL, but this disclosure is not limited thereto. Furthermore, the initialization voltage line Vini can extend along the X or Y direction to configure the circuit layer 104, for example... Figure 5 As shown, the initialization voltage line Vini can be configured along the Y direction, but is not limited to this. The configuration direction of the initialization voltage line Vini can be the same as the configuration direction of the data line DL or the configuration direction of the system voltage line Vcc, but is not limited to this. In addition, the semiconductor layer 104s is also configured in the circuit layer 104. According to different embodiments, the circuit layer 104 can be designed as a 4T2C (4 TFTs, 2 capacitors), 4T3C, 5T2C, 6T1C, 7T2C, 7T3C or 9T1C configuration as required, but is not limited to this.

[0110] It should be understood that, for clarity, the following description uses symbols 300-1 and 300-2 to denote different electronic components 300, and symbols 302a-1 and 302a-2 to denote different anodes 302a. Electronic components 300-1 and 300-2 can be two adjacent electronic components, while anodes 302a-1 and 302a-2 are the anodes of electronic components 300-1 and 300-2, respectively. Please refer to... Figure 5 as well as Figure 6Electronic component 300-1 includes an anode 302a-1, which is electrically connected to conductive component 104a via a via V1 penetrating the insulating layer 106. The via V1 has a first area A1, and the anode 302a-1 has a second area A2. According to some embodiments, the ratio of the first area A1 to the second area A2 is between 0.05 and 0.4 (i.e., 0.05 ≤ first area A1 and / or second area A2 ≤ 0.4), or between 0.15 and 0.3, for example, 0.2 or 0.25, but is not limited thereto. According to some embodiments, the anode 302a-2 and the via V2 of electronic component 300-2 also have a similar area ratio, which will not be repeated here.

[0111] In addition, although Figure 6 The cross-sectional structure corresponding to electronic component 300-2 is not shown, but it is understood that electronic component 300-2 can be electrically connected to circuit layer 104 in the same manner as electronic component 300-1. Specifically, the anode 302a-2 of electronic component 300-2 can be electrically connected to a conductive component in circuit layer 104 via a via V2 in insulating layer 106. This conductive component and the aforementioned conductive component 104a can be disposed in the same conductive layer. Furthermore, according to some embodiments, circuit layer 104 may include a conductive component 104b located below conductive component 104a, and conductive component 104b can serve as a shared electrode.

[0112] According to some embodiments, electronic component 300-1 may emit red or green light, and electronic component 300-2 may emit blue light, but this disclosure is not limited thereto. Figure 5 As shown, anode 302a-1 and via V1 have a first overlapping region OA (indicated by halftone dots for clarity), and anode 302a-2 and via V2 have a second overlapping region OA2 (indicated by halftone dots for clarity). According to some embodiments, the width W1 of the first overlapping region OA1 is greater than the width W2 of the second overlapping region OA2. According to some embodiments, the area of ​​the first overlapping region OA1 is greater than the area of ​​the second overlapping region OA2. Furthermore, according to some embodiments, the width W3 of anode 302a-1 of electronic component 300-1 is greater than the width W4 of anode 302a-2 of electronic component 300-2.

[0113] According to embodiments of this disclosure, the aforementioned widths W1 and W2 refer to the minimum widths of the first overlapping region OA1 and the second overlapping region OA2 in a direction parallel to the extension direction of the scan line SL (e.g., the X direction in the figures). Furthermore, the aforementioned widths W3 and W4 refer to the maximum widths of anode 302a-1 and anode 302a-2 in a direction parallel to the extension direction of the scan line SL (e.g., the X direction in the figures).

[0114] Next, please refer to Figure 7A as well as Figure 7B , Figure 7A as well as Figure 7B This diagram illustrates the results of optical simulation of an electronic device according to some embodiments of the present disclosure. Figure 7A This is a schematic diagram of the simulation results of the light reflection path of a dielectric structure 400 with a single-layer structure (first layer 402). Figure 7B This is a schematic diagram of the simulation results of the light reflection path of a dielectric structure 400 with a two-layer structure (first layer 402 and second layer 404).

[0115] like Figure 7A As shown, the light emitted from the electronic components initially radiates outwards, but converges inwards after passing through the first layer 402. (As...) Figure 7B As shown, the light emitted from the electronic component initially focuses inward after passing through the first layer 402, and further focuses inward after passing through the second layer 404, making the light-focusing effect more obvious. As mentioned above, the multi-layered dielectric structure 400 has multiple light-focusing surfaces, which can further enhance the light-focusing effect and increase the light output brightness of the electronic component.

[0116] In summary, according to the embodiments of this disclosure, the provided electronic device includes a dielectric structure with a specific structural design, which has optical adjustment characteristics, protective function, or can be used as a snap-fit ​​structural component, thereby improving the luminous intensity of the electronic device or the strength or reliability of the overall structure.

[0117] While the embodiments and advantages of this disclosure have been disclosed above, it should be understood that any person skilled in the art can make modifications, substitutions, and refinements without departing from the spirit and scope of this disclosure. Features between embodiments of this disclosure can be freely combined and used as long as they do not violate the spirit of the invention or conflict with it. Furthermore, the scope of protection of this disclosure is not limited to the processes, machines, manufacturing, material composition, apparatus, methods, and steps described in the specific embodiments of the specification. Any person skilled in the art can understand from the disclosure of this disclosure that current or future developed processes, machines, manufacturing, material composition, apparatus, methods, and steps can be used according to this disclosure as long as they can perform substantially the same function or obtain substantially the same results in the embodiments described herein. Therefore, the scope of protection of this disclosure includes the aforementioned processes, machines, manufacturing, material composition, apparatus, methods, and steps. The scope of protection of this disclosure shall be determined by the scope of the appended claims. No embodiment or claim of this disclosure needs to achieve all the purposes, advantages, and features disclosed in this disclosure.

Claims

1. An electronic device, characterized by comprising: The application includes: a first substrate; a second substrate disposed opposite to the first substrate; a first conductive component disposed on the first substrate; an insulating layer disposed on the first conductive component and having a first via hole; a first electronic component disposed on the insulating layer and electrically connected to the first conductive component through the first via hole, and the first electronic component is a light emitting component; a dielectric structure disposed between the first electronic component and the second substrate, and having a first portion and a second portion, the first portion overlaps the first via hole, and the second portion is adjacent to the first portion, wherein the thickness of the first portion is greater than the thickness of the second portion, and the first portion of the dielectric structure has a curved surface protruding towards the first electronic component, wherein the dielectric structure is a multi-layer structure, the dielectric structure includes a first layer and a second layer, the first layer is disposed between the second substrate and the second layer, and the thickness of the first layer is greater than the thickness of the second layer. The light transmittance of the dielectric structure is between 80% and 99%. 2.The electronic device of claim 1, wherein, Further comprising a bank layer disposed on the insulating layer, and the dielectric structure has a groove, the groove overlaps the bank layer. 3.The electronic device of claim 1, wherein, Further comprising a color filter layer disposed between the second substrate and the dielectric structure. 4.The electronic device of claim 1, wherein, The color filter layer has a recess structure, and a third portion of the dielectric structure is disposed in the recess structure. 5.The electronic device of claim 4, wherein, The first electronic component includes a first anode, the first anode is electrically connected to the first conductive component through the first via hole, the first via hole has a first area, the first anode has a second area, and the ratio of the first area to the second area is between 0.05 and 0.

4. 6.The electronic device of claim 1, wherein, The ratio of the first area to the second area is between 0.15 and 0.

3. 7.The electronic device of claim 6, wherein, Further comprising a second conductive component disposed on the first substrate, and a second electronic component disposed on the insulating layer, wherein the second electronic component is electrically connected to the second conductive component through a second via hole, and the first electronic component emits red light or green light, and the second electronic component emits blue light. 8.The electronic device of claim 1, wherein, The first electronic component includes a first anode, the first anode is electrically connected to the first conductive component through the first via hole, the second electronic component includes a second anode, the second anode is electrically connected to the second conductive component through the second via hole, the first anode and the first via hole have a first overlapping area, the second anode and the second via hole have a second overlapping area, and the width of the first overlapping area is greater than the width of the second overlapping area. 9.The electronic device of claim 8, wherein, ​ 10.The electronic device of claim 8, wherein, The first electronic component includes a first anode electrically connected to the first conductive component through the first via, and the second electronic component includes a second anode electrically connected to the second conductive component through the second via. The first anode and the first via have a first overlapping area, and the second anode and the second via have a second overlapping area. The area of the first overlapping area is greater than the area of the second overlapping area. 11.The electronic device of claim 8, wherein, The first electronic component includes a first anode electrically connected to the first conductive component, and the second electronic component includes a second anode electrically connected to the second conductive component. The width of the first anode is greater than the width of the second anode.

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