Addressing transfer apparatus and addressing transfer method

Abstract

This invention provides an addressable transfer device and a addressable transfer method. The addressable transfer device includes: a transfer substrate; a driving substrate disposed on one side of the transfer substrate; a plurality of debonding light sources disposed at intervals on the side of the driving substrate away from the transfer substrate, the plurality of debonding light sources being electrically connected to the driving substrate, the driving substrate being used to illuminate or deactivate a target debonding light source among the plurality of debonding light sources; and a photo-debonding transfer head disposed on the driving substrate and covering the plurality of debonding light sources, the photo-debonding transfer head being used to adhere microelectronic components and, after being irradiated by the target debonding light source, release the corresponding microelectronic components to a target substrate. The addressable transfer device of this embodiment can achieve selective transfer of microelectronic components, improving transfer efficiency and transfer yield.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to an address transfer device and an address transfer method. Background Technology

[0002] Micro-LED (Micro light-emitting diode) display technology boasts advantages such as high brightness, high response speed, low power consumption, and long lifespan, making it a hot research topic in the pursuit of next-generation display technologies. Currently, Micro-LEDs are difficult to grow directly on glass substrates and require transfer techniques to transfer them from a carrier substrate to the glass substrate. Commonly used transfer techniques include stamp transfer and laser transfer. However, stamp transfer can only perform fixed-position transfers and cannot handle mass repairs of random defects. Laser transfer requires point-by-point transfer and cannot perform selective transfers, resulting in lower transfer efficiency and yield. Summary of the Invention

[0003] Therefore, in order to overcome at least some of the defects and deficiencies in the prior art, embodiments of the present invention provide an addressing transfer device and an addressing transfer method.

[0004] Specifically, in one aspect, an addressing transfer device provided by an embodiment of the present invention includes: a transfer substrate; a driving substrate disposed on one side of the transfer substrate; a plurality of debonding light sources disposed at intervals on the side of the driving substrate away from the transfer substrate, the plurality of debonding light sources being electrically connected to the driving substrate, the driving substrate being used to turn on or off a target debonding light source among the plurality of debonding light sources; and a photo-debonding transfer head disposed on the driving substrate and covering the plurality of debonding light sources, the photo-debonding transfer head being used to adhere microelectronic components and, after being irradiated by the target debonding light source, release the corresponding microelectronic components to the target substrate.

[0005] In one specific embodiment of the present invention, the photoadhesive transfer head includes a plurality of protrusions spaced apart from each other, and the plurality of protrusions correspond one-to-one with the plurality of adhesive dissolution light sources.

[0006] In one specific embodiment of the present invention, the distance between two adjacent microelectronic components on the target substrate is an integer multiple of the distance between two adjacent debonding light sources on the addressing transfer device.

[0007] In a specific embodiment of the present invention, the light emission angle α of each of the adhesive dissolution light sources is: α<90°-arcsin(1 / n), where α is the light emission angle and n is the refractive index of the photodissolution transfer head.

[0008] In one specific embodiment of the present invention, the plurality of adhesive dissolving light sources are infrared LED light sources, and the photoadhesive dissolving transfer head is an infrared photoadhesive dissolving transfer head.

[0009] In one specific embodiment of the present invention, the plurality of adhesive dissolution light sources are ultraviolet LED light sources, and the photo-dissolution transfer head is an ultraviolet photo-dissolution transfer head.

[0010] On the other hand, embodiments of the present invention also provide an addressing transfer method, comprising: providing a carrier substrate on which microelectronic components are disposed; using a photoadhesive transfer head of an addressing transfer device to adhere the microelectronic components to the carrier substrate; using a driving substrate of the addressing transfer device to illuminate a target deadhesive light source among a plurality of deadhesive light sources on the addressing transfer device; and releasing the corresponding microelectronic components to the target substrate after being irradiated by the target deadhesive light source.

[0011] In one specific embodiment of the present invention, the distance between two adjacent microelectronic components on the target substrate is an integer multiple of the distance between two adjacent debonding light sources.

[0012] In one specific embodiment of the present invention, the addressing transfer method further includes: performing performance testing on the microelectronic components on the target substrate to obtain the defect locations on the target substrate; determining corresponding redundant locations based on the defect locations; and using the addressing transfer device to transfer the microelectronic components on the carrier substrate to the redundant locations on the target substrate.

[0013] In a specific embodiment of the present invention, the light emission angle α of each of the adhesive dissolution light sources is: α<90°-arcsin(1 / n), where α is the light emission angle and n is the refractive index of the photodissolution transfer head.

[0014] As can be seen from the above, the embodiments of the present invention, by setting a driving substrate, multiple debonding light sources and a photo-debonding transfer head on the addressing and transfer device, control the lighting or turning off of the target debonding light source among the multiple debonding light sources through the driving substrate, and irradiate the photo-debonding transfer head when the target debonding light source is lit, thereby releasing the corresponding microelectronic components, realizing the selective transfer of microelectronic components, improving transfer efficiency and transfer yield, realizing selective defect repair, reducing the number of repairs and repair time, saving chip usage, and reducing process costs and materials. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a schematic diagram of the structure of an address transfer device provided in an embodiment of this application;

[0017] Figure 2 Another structural schematic diagram of the address transfer device provided in the embodiments of this application;

[0018] Figures 3A-3C This is a schematic diagram of the addressing transfer process;

[0019] Figure 4 A flowchart illustrating the address transfer method provided in an embodiment of this application;

[0020] Figure 5 This is a partial flowchart illustrating the address transfer method provided in an embodiment of this application. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments described in the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present invention.

[0022] It should be noted that all directional indicators (such as up, down, left, right, front, back, top, and bottom) in the embodiments of this invention are only used to explain the relative positional relationship and movement of the components in a specific posture (as shown in the attached figures). If the specific posture changes, the directional indicator will also change accordingly. Furthermore, the term "vertical" in the embodiments and claims refers to an angle of 90° between two components or a deviation of -5° to +5°, and the term "parallel" refers to an angle of 0° between two components or a deviation of -5° to +5°.

[0023] In the embodiments of this invention, descriptions involving "first," "second," etc., are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature.

[0024] [First Embodiment]

[0025] See Figure 1 and Figure 2 The first embodiment of the present invention provides an addressing and transfer device 10, which includes: a transfer substrate 100, a driving substrate 200, a plurality of de-adhesion light sources 300 and a photo-de-adhesion transfer head 400.

[0026] Specifically, the transfer substrate 100 can be, for example, a substrate of a rigid material, such as a glass substrate, polymer substrate, sapphire substrate, ceramic substrate, etc.; the driving substrate 200 can be, for example, a TFT array substrate (i.e., an active-mode switching array substrate), or, for example, a CMOS (Complementary Metal Oxide) substrate. Semiconductor (Complementary Metal-Oxide-Semiconductor) array substrate, driving substrate 200 is disposed on one side of transfer substrate 100; multiple debonding light sources 300 can be, for example, an LED light-emitting array, specifically, infrared LED light sources or ultraviolet LED light sources, etc., are disposed at intervals on the side of driving substrate 200 away from transfer substrate 100, multiple debonding light sources 300 are electrically connected to driving substrate 200, driving substrate 200 can selectively control any one of the multiple debonding light sources 300, for example, by lighting or turning off a target debonding light source among the multiple debonding light sources 300. The target debonding light source can be one or more debonding light sources, specifically determined by the position of the microelectronic component to be transferred, the microelectronic component can be, for example, a Micro-LED, etc. Other microelectronic devices can be used, and the embodiments of the present invention are not limited thereto. The photoadhesive transfer head 400 can be, for example, an infrared photoadhesive transfer head or an ultraviolet photoadhesive transfer head. The type of the photoadhesive transfer head 400 corresponds to the type of the debonding light source 300. For example, when the debonding light source 300 is an infrared LED light source, the photoadhesive transfer head 400 is an infrared photoadhesive transfer head; when the debonding light source 300 is an ultraviolet LED light source, the photoadhesive transfer head 400 is an ultraviolet photoadhesive transfer head. The photoadhesive transfer head 400 is disposed on the driving substrate 200 and covers multiple debonding light sources 300. Under the control of the driving substrate 200, the debonding light sources 300 can emit, for example, near-infrared light or near-ultraviolet light. Under the illumination of the light source emitted by the debonding light source 300, the viscosity of the photoadhesive transfer head 400 is reduced, thereby enabling the release of the microelectronic components to be transferred. In this way, by selectively illuminating the de-adhesion light source 300 through the driving substrate 200, the viscosity of the photo-de-adhesion transfer head 400 at the corresponding position is reduced, so that the corresponding microelectronic components are released. This achieves selective transfer of microelectronic components, improves the transfer efficiency of microelectronic components, and allows for the selective omission of defective microelectronic components during release, further improving the transfer yield of microelectronic components. Through selective transfer of microelectronic components, selective defect repair can also be achieved, thereby reducing the number of repairs, reducing repair time, saving chip usage, and reducing process costs and materials.

[0027] In one specific embodiment of the present invention, the photopolymerization adhesive transfer head 400 may be, for example, as shown below. Figure 1 The planar structure shown, namely the photoadhesive transfer head 400, is a photoadhesive layer disposed on the side of the driving substrate 200 away from the transfer substrate 100 and covered with multiple deadhesive light sources 300. Since the multiple deadhesive light sources 300 are arranged at intervals, when the selected target deadhesive light source is lit, the adhesiveness of the photoadhesive layer at the position corresponding to the target deadhesive light source decreases, thereby releasing the microelectronic components adhered to the position.

[0028] In one specific embodiment of the present invention, the photopolymerization adhesive transfer head 400 may further include, for example, the following: Figure 2 The plurality of protrusions 410 shown extend away from the driving substrate 200. These protrusions 410 may be spaced apart from each other, and each corresponds to one of the plurality of debonding light sources. For example, the photo-debonding transfer head 400 may include a photo-debonding planar layer (…). Figure 2 (Not shown in the diagram) and a plurality of protrusions 410, the photoadhesive dissolution plane layer is disposed on the side of the driving substrate 200 away from the transfer substrate 100 and covers a plurality of dissolution light sources 300, the plurality of protrusions 410 are disposed at intervals on the side of the photoadhesive dissolution plane layer away from the driving substrate 200 and extend toward the side away from the driving substrate 200; the photoadhesive dissolution transfer head 400 may, for example, include a plurality of protrusions 410, the plurality of protrusions 410 correspondingly covering the plurality of dissolution light sources 300 and extending toward the side away from the driving substrate 200. Of course, this is only an example for illustration, and the embodiments of the present invention are not limited thereto. By configuring the photoadhesive transfer head 400 with a structure including multiple protrusions 410 spaced apart from each other, an air layer is formed between the protrusions 410. This reduces heat transfer between adjacent protrusions 410 or crosstalk from the light source 300 to adjacent protrusions 410 when the photoadhesive transfer head 400 is irradiated, thereby improving the reliability of microelectronic component transfer.

[0029] Preferably, the light emission angle α of each debonding light source 300 is: α < 90° - arcsin(1 / n), where α is the light emission angle and n is the refractive index of the photodebonding transfer head. This avoids the light source illuminating an excessively large area, which could affect the viscosity of the photodebonding transfer head 400 at locations other than the target location, thus further improving the reliability of microelectronic component transfer.

[0030] See Figures 3A to 3B ,like Figure 3AAs shown, a plurality of microelectronic components 510 to be transferred are disposed on the carrier substrate 500. The plurality of microelectronic components 510 are disposed on the carrier substrate 500 at intervals. The distance between two adjacent debonding light sources 300 can be, for example, equal to the distance between adjacent microelectronic components 510 on the carrier substrate 500. Of course, the specific settings can be made according to the actual situation, and the embodiments of the present invention are not limited thereto. Figure 3B As shown, the addressing transfer device 10 adheres the microelectronic component 510 to be transferred via a photoadhesive transfer head 400. The microelectronic component 510 can, for example, be adhered to the position on the photoadhesive transfer head 400 corresponding to the de-adhesive light source 300. Figure 3C As shown, for example, if it is necessary to transfer a microelectronic component 510 to a target position on a target substrate 600, the drive substrate 200 of the addressing transfer device 10 controls the corresponding target de-adhesion light source 300 to be lit. After the target de-adhesion light source 300 is lit, under the illumination of the light source, the viscosity at the position of the photo-adhesive transfer head 400 corresponding to the target de-adhesion light source 300 decreases, and the microelectronic component 510 adhered to the corresponding position of the photo-adhesive transfer head 400 is released to the target position on the target substrate 600, thus completing the transfer of the microelectronic component 510. Preferably, the distance between two adjacent microelectronic components 510 on the target substrate 600 is an integer multiple of the distance between two adjacent de-adhesion light sources 300 on the addressing transfer device 10, so as to... Figure 3C For example, the distance between two adjacent microelectronic components 510 on the target substrate 600 can be, for example, three times the distance between two adjacent debonding light sources 300 on the addressing transfer device 10. That is, there is a redundant position on the target substrate 600 where the microelectronic components 510 are located. Two more microelectronic components 510 can be placed in the redundant position. In this way, when the microelectronic components 510 placed on the target substrate 600 have defects, new microelectronic components 510 can be replaced in the redundant position by the addressing transfer device 10 to ensure the quality of the microelectronic components on the target substrate 600 and further improve the transfer yield.

[0031] In summary, the embodiments of the present invention, by setting a driving substrate 200, multiple debonding light sources 300 and a photo-debonding transfer head 400 on the addressing and transfer device 10, control the lighting or turning off of the target debonding light source among the multiple debonding light sources 300 through the driving substrate 200, and irradiate the photo-debonding transfer head 400 when the target debonding light source is lit, thereby releasing the corresponding microelectronic component 510, achieving selective transfer of microelectronic components, improving transfer efficiency and transfer yield, realizing selective defect repair, reducing the number of repairs and repair time, saving chip usage, and reducing process costs and materials. Furthermore, by configuring the photoadhesive transfer head 400 with a structure including multiple protrusions 410 spaced apart from each other, the spacing between the multiple protrusions 410 creates an air layer between them. This reduces heat transfer between adjacent protrusions 410 of the photoadhesive transfer head 400 or crosstalk from the light source 300 to adjacent protrusions 410 when irradiated by the adhesive dissolution light source 300, thereby improving the reliability of microelectronic component transfer.

[0032] [Second Embodiment]

[0033] See Figure 4 The second embodiment of the present invention provides an addressing transfer method, which may include, for example, the following steps:

[0034] S10, a carrier substrate is provided, on which microelectronic components are disposed;

[0035] S20, the microelectronic components are adhered to the carrier substrate using the photolytic adhesive transfer head of the addressing transfer device;

[0036] S30, the target debonding light source among the multiple debonding light sources on the addressing and transfer device is lit by the driving substrate of the addressing and transfer device, and the corresponding microelectronic component is released to the target substrate after being irradiated by the target debonding light source.

[0037] See Figure 5 The following steps are included after step S30:

[0038] S40, Perform performance testing on the microelectronic components on the target substrate to obtain the defect locations on the target substrate;

[0039] S50, determine the corresponding redundant position based on the defect position;

[0040] S60, using the addressing transfer device, the microelectronic component on the carrier substrate is transferred to the redundant position on the target substrate.

[0041] To more clearly illustrate the address transfer method provided in this embodiment, the following is combined with... Figures 3A to 3CThe address transfer method of this embodiment will be described in detail.

[0042] Specifically, see Figure 3A In this embodiment, microelectronic components 510 on a carrier substrate 500 are transferred using an addressing transfer device. The addressing transfer device may include, for example, a transfer substrate 100, a driving substrate 200, multiple de-adhesion light sources 300, and a photo-de-adhesion transfer head 400. The transfer substrate 100 may be, for example, a substrate made of a rigid material, such as a glass substrate, polymer substrate, sapphire substrate, or ceramic substrate; the driving substrate 200 may be, for example, a TFT array substrate (i.e., an active switching array substrate), or, for example, a CMOS (Complementary Metal Oxide) substrate. Semiconductor (Complementary Metal-Oxide-Semiconductor) array substrate, driving substrate 200 is disposed on one side of transfer substrate 100; multiple debonding light sources 300 may be, for example, an LED light-emitting array, specifically, infrared LED light sources or ultraviolet LED light sources, etc., are disposed at intervals on the side of driving substrate 200 away from transfer substrate 100, multiple debonding light sources 300 are electrically connected to driving substrate 200, driving substrate 200 can selectively control any one of the multiple debonding light sources 300, for example, through driving substrate 200. The target debonding light source among multiple debonding light sources 300 is turned on or off. The target debonding light source can be one or more debonding light sources, specifically determined by the location of the microelectronic component to be transferred; this embodiment of the invention is not limited to this. The photo-debonding transfer head 400 can be, for example, an infrared photo-debonding transfer head or an ultraviolet photo-debonding transfer head. The type of the photo-debonding transfer head 400 corresponds to the type of the debonding light source 300. The photo-debonding transfer head 400 is disposed on the driving substrate 200 and covers the multiple debonding light sources 300. Under the control of the driving substrate 200, the debonding light sources 300 can, for example, emit near-infrared light or near-ultraviolet light. The photo-debonding transfer head 400 can, for example, have a planar structure, or include multiple protrusions 410. The multiple protrusions 410 can, for example, be spaced apart from each other and correspond one-to-one with the multiple debonding light sources. Preferably, the light emission angle α of each debonding light source 300 is: α<90°-arcsin(1 / n), where α is the light emission angle and n is the refractive index of the photodebonding transfer head.

[0043] During the addressing and transfer process, a carrier substrate 500 is first provided. The carrier substrate 500 may have a plurality of microelectronic components 510 to be transferred, for example. The microelectronic components 510 may be, for example, Micro-LEDs, or other microelectronic devices. The plurality of microelectronic components 510 may be arranged on the carrier substrate 500 at intervals. The distance between two adjacent debonding light sources 300 on the addressing and transfer device may be, for example, equal to the distance between adjacent microelectronic components 510 on the carrier substrate 500. Of course, the specific settings can be made according to the actual situation, and the embodiments of the present invention are not limited thereto.

[0044] like Figure 3B As shown, the addressing and transfer device 10 uses a photoadhesive transfer head 400 to adhere the microelectronic component 510 to be transferred. The photoadhesive transfer head 400 is a photoadhesive material with viscosity, which can adhere the microelectronic component 510. For example, the microelectronic component 510 can be adhered to the position of the photoadhesive transfer head 400 corresponding to the de-adhesive light source 300. Taking the photoadhesive transfer head 400 as having multiple protrusions 410 as an example, multiple microelectronic components 510 are adhered to multiple protrusions 410.

[0045] like Figure 3C As shown, for example, if it is necessary to transfer a microelectronic component 510 to a target position on a target substrate 600, the drive substrate 200 of the addressing transfer device controls the target de-adhesion light source 300 corresponding to the microelectronic component 510 adhering to the protrusion 410 corresponding to the target position to be lit. After the target de-adhesion light source 300 is lit, under the illumination of the light source, the viscosity at the position of the photo-adhesion transfer head 400 corresponding to the target de-adhesion light source 300 (e.g., the protrusion 410 corresponding to the target de-adhesion light source) decreases, and the microelectronic component 510 adhering to the position corresponding to the photo-adhesion transfer head 400 is released to the target position on the target substrate 600, thus completing the transfer of the microelectronic component 510. In this way, by selectively illuminating the de-adhesion light source 300 through the driving substrate 200, the viscosity of the photo-de-adhesion transfer head 400 at the corresponding position is reduced, so that the corresponding microelectronic components are released, thereby realizing the selective transfer of microelectronic components, improving the transfer efficiency of microelectronic components, and during the release, defective microelectronic components can be selected not to be released, so as to further improve the transfer yield of microelectronic components.

[0046] Preferably, the distance between two adjacent microelectronic components 510 on the target substrate 600 is an integer multiple of the distance between two adjacent debonding light sources 300 on the addressing and transfer device 10, so as to Figure 3CFor example, the distance between two adjacent microelectronic components 510 on the target substrate 600 can be, for example, three times the distance between two adjacent debonding light sources 300 on the addressing transfer device 10. That is, there is also a redundant position on the target substrate 600 where the microelectronic components 510 are located, and two more microelectronic components 510 can be placed in the redundant position.

[0047] As described above, performance testing can be performed on the microelectronic component 510 on the target substrate 600, for example, taking a Micro-LED as an example. Specifically, the Micro-LED on the target substrate 600 can be lit to test its performance. Of course, this is only an example, and the embodiments of the present invention are not limited thereto; other testing methods can be selected according to actual circumstances. After performance testing, for example, the defect locations on the target substrate 600 can be obtained. Then, for example, a corresponding redundant location can be determined based on the defect locations. Then, the microelectronic component 510 on the carrier substrate 500 can be transferred to the redundant location on the target substrate 600 using an addressing transfer device according to the above method. In this way, when the microelectronic component 510 placed on the target substrate 600 has defects, a new microelectronic component 510 can be repositioned at the redundant position by the addressing transfer device 10 to ensure the quality of the microelectronic component on the target substrate 600 and further improve the transfer yield. Through the selective transfer of microelectronic components, selective defect repair can also be achieved, thereby reducing the number of repairs, reducing repair time, saving chip usage, and reducing process costs and materials.

[0048] In summary, the addressing transfer method provided in this embodiment of the invention controls the lighting or turning off of a target debonding light source among multiple debonding light sources 300 on the addressing transfer device via a driving substrate 200. When the target debonding light source is lit, it illuminates the photo-debonding transfer head 400 on the addressing transfer device to release the corresponding microelectronic component 510, thereby achieving selective transfer of microelectronic components, improving transfer efficiency and yield, enabling selective defect repair, reducing the number of repairs and repair time, saving chip usage, and reducing process costs and materials. Furthermore, by configuring the photo-debonding transfer head 400 with a structure including multiple protrusions 410 spaced apart from each other, an air layer is created between the protrusions 410. This reduces heat transfer between adjacent protrusions 410 or crosstalk from the light source 300 to adjacent protrusions 410 during irradiation, thereby improving the reliability of microelectronic component transfer. Furthermore, when the microelectronic component 510 placed on the target substrate 600 has defects, a new microelectronic component 510 can be repositioned at the redundant position by the addressing transfer device 10 to ensure the quality of the microelectronic component on the target substrate 600 and further improve the transfer yield. Through the selective transfer of microelectronic components, selective defect repair can also be achieved, thereby reducing the number of repairs, reducing repair time, saving chip usage, and reducing process costs and materials.

[0049] Furthermore, it is understood that the foregoing embodiments are merely illustrative examples of the present invention. Provided that the technical features do not conflict, the structure is not contradictory, and the purpose of the invention is not violated, the technical solutions of the various embodiments can be arbitrarily combined and used.

[0050] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An addressing transfer device, characterized in that, include: Transfer substrate; A driving substrate is disposed on one side of the transfer substrate; Multiple debonding light sources are disposed at intervals on the side of the driving substrate away from the transfer substrate. These multiple debonding light sources are electrically connected to the driving substrate, which is used to illuminate or deactivate a target debonding light source among the multiple debonding light sources. A photoadhesive transfer head is disposed on the driving substrate and covers the plurality of adhesive debonding light sources. The photoadhesive transfer head is used to adhere microelectronic components and release the corresponding microelectronic components to the target substrate after being irradiated by the target adhesive debonding light source. The distance between two adjacent debonding light sources is equal to the distance between two adjacent microelectronic components on the carrier substrate.

2. The addressing and transfer device as described in claim 1, characterized in that, The photoadhesive transfer head includes a plurality of protrusions spaced apart from each other, and each of the plurality of protrusions corresponds to a plurality of adhesive dissolution light sources.

3. The addressing and transfer device as described in claim 2, characterized in that, The distance between two adjacent microelectronic components on the target substrate is an integer multiple of the distance between two adjacent debonding light sources on the addressing and transfer device.

4. The addressing and transfer device as described in claim 1, characterized in that, The plurality of adhesive dissolving light sources are infrared LED light sources, and the optical adhesive dissolving transfer head is an infrared optical adhesive dissolving transfer head.

5. The addressing and transfer device as described in claim 1, characterized in that, The plurality of adhesive dissolution light sources are ultraviolet LED light sources, and the photo-dissolution transfer head is an ultraviolet photo-dissolution transfer head.

6. An addressing transfer method, characterized in that, include: A carrier substrate is provided, on which microelectronic components are disposed; The microelectronic components are adhered to the carrier substrate using the photodegradation adhesive transfer head of the addressing transfer device as described in claim 1; The target debonding light source among the multiple debonding light sources on the addressing and transfer device is lit by the driving substrate of the addressing and transfer device, and the corresponding microelectronic component is released to the target substrate after being irradiated by the target debonding light source. The distance between two adjacent debonding light sources is equal to the distance between two adjacent microelectronic components on the carrier substrate.

7. The addressing transfer method as described in claim 6, characterized in that, The distance between two adjacent microelectronic components on the target substrate is an integer multiple of the distance between two adjacent debonding light sources.

8. The addressing transfer method as described in claim 7, characterized in that, Also includes: The performance of the microelectronic components on the target substrate is tested to obtain the location of defects on the target substrate; Determine the corresponding redundant location based on the defect location; The addressing and transfer device is used to transfer the microelectronic components on the carrier substrate to the redundant positions on the target substrate.

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