Light-emitting devices and transfer devices

Abstract

This invention provides a light-emitting device and a transfer apparatus. The light-emitting device includes, for example: a light-emitting functional layer with a light-emitting surface; a first electrode disposed on one side of the light-emitting functional layer and electrically connected to the light-emitting functional layer; a second electrode disposed on the same side of the light-emitting functional layer as the first electrode and electrically connected to the light-emitting functional layer; and a light-shielding layer covering the light-emitting surface, the light-shielding layer having a light-emitting port to expose the light emitted by the light-emitting functional layer, the area of ​​the light-emitting port being smaller than the area of ​​the light-emitting surface. This technical solution achieves narrow light emission of the light-emitting device by providing a light-shielding layer with a light-emitting port on the light-emitting surface, making the area of ​​the light-emitting port smaller than the area of ​​the light-emitting surface.

Description

Technical Field

[0001] This invention relates to the field of display technology, and more particularly to a light-emitting device and a transfer apparatus. Background Technology

[0002] Micro LED (micro-light-emitting diode) display technology refers to a display technology that uses self-emissive, micrometer-sized LEDs as light-emitting pixel units, assembling them onto a driving panel to form a high-density LED array. Due to the small size, high integration, and self-emissive nature of micro LED chips, they have significant advantages over LCD and OLED displays in terms of brightness, resolution, contrast ratio, energy consumption, lifespan, response speed, and thermal stability. Therefore, they are commonly used as light-emitting devices in various applications.

[0003] However, existing Micro LEDs have a large light-emitting angle and cannot achieve narrow light emission. Therefore, when applied to applications that require narrow light emission sources, such as AR (augmented reality), MR (mixed reality) Micro-LED display panels, high-brightness automotive displays, and micro-device transfer devices, existing Micro LEDs are unable to meet their requirements. Summary of the Invention

[0004] Therefore, in order to overcome at least some of the defects and deficiencies of the prior art, embodiments of the present invention provide a light-emitting device and a transfer device using such a light-emitting device.

[0005] Specifically, one embodiment of the present invention provides a light-emitting device, for example comprising: a light-emitting functional layer having a light-emitting surface; a first electrode disposed on one side of the light-emitting functional layer and electrically connected to the light-emitting functional layer; a second electrode disposed on the light-emitting functional layer on the same side as the first electrode and electrically connected to the light-emitting functional layer; and a light-shielding layer covering the light-emitting surface, wherein the light-shielding layer has a light-emitting port to expose the light emitted by the light-emitting functional layer, and the area of ​​the light-emitting port is smaller than the area of ​​the light-emitting surface.

[0006] The above technical solution achieves narrow light emission of the light-emitting device by setting a light-shielding layer with a light-emitting port on the light-emitting surface, so that the area of ​​the light-emitting port is smaller than the area of ​​the light-emitting port.

[0007] In one embodiment of the present invention, the light-emitting functional layer includes: a first doped semiconductor layer electrically connected to the first electrode; a second doped semiconductor layer electrically connected to the second electrode; an active layer disposed between the first doped semiconductor layer and the second doped semiconductor layer; and a buffer layer located on the side of the second doped semiconductor layer away from the second electrode; wherein the light-emitting surface is located on the side of the buffer layer away from the second doped semiconductor layer, the first electrode is located on the side of the first doped semiconductor layer away from the active layer, and the second electrode is located on the side of the second doped semiconductor layer away from the buffer layer.

[0008] In one embodiment of the present invention, the light-emitting functional layer includes: a first doped semiconductor layer connected to the first electrode; a second doped semiconductor layer connected to the second electrode; an active layer disposed between the first doped semiconductor layer and the second doped semiconductor layer; and a buffer layer located on the side of the second doped semiconductor layer away from the second electrode; wherein the light-emitting surface and the first electrode are located on the side of the first doped semiconductor layer away from the active layer, the first electrode penetrates the light-shielding layer and is connected to the first doped semiconductor layer, and the second electrode is located on the side of the second doped semiconductor layer away from the buffer layer.

[0009] In one embodiment of the present invention, the light-shielding layer also covers the other surfaces of the light-emitting functional layer besides the light-emitting surface, and the first electrode and the second electrode respectively penetrate the light-shielding layer.

[0010] In one embodiment of the present invention, the light-shielding layer includes an insulating layer and a metal layer, wherein the metal layer is located on the side of the insulating layer away from the light-emitting functional layer.

[0011] In one embodiment of the present invention, the light-shielding layer is a distributed Bragg emission mirror.

[0012] In one embodiment of the present invention, the light-emitting device further includes a focusing lens, which is disposed at the light-emitting port and covers the light-emitting port.

[0013] In one embodiment of the present invention, the light-emitting port includes a plurality of sub-light-emitting ports having a hollowed-out pattern.

[0014] In addition, a transfer device proposed in the embodiments of the present invention includes, for example: a transfer substrate; a driving device layer disposed on the transfer substrate; a light-emitting device as described in any of the foregoing embodiments disposed on the driving device layer on a side away from the transfer substrate and electrically connected to the driving device layer; and a first adhesive layer disposed on the driving device layer on a side away from the transfer substrate.

[0015] In one embodiment of the present invention, the transfer device further includes: a second adhesive layer, which is adhered to the side of the driving substrate away from the transfer substrate and covers the light-emitting device; and an adhesive substrate disposed between the first adhesive layer and the second adhesive layer.

[0016] In one embodiment of the present invention, an adhesive protrusion is provided on the side of the first adhesive colloid layer away from the driving substrate, and the adhesive protrusion is provided corresponding to the light-emitting device.

[0017] The above-mentioned one or more technical solutions have the following beneficial effects and advantages: In this embodiment of the invention, by setting a light-shielding layer with a light-emitting port on the light-emitting surface, the area of ​​the light-emitting port is smaller than the area of ​​the light-emitting surface, thereby achieving narrow light emission of the light-emitting device. Furthermore, setting light-shielding layers on other surfaces of the light-emitting device reduces side light emission. Setting the light-shielding layer as an insulating layer and a metal layer or a distributed Bragg emission mirror structure increases light reflection from multiple sides and resonance in the reflection cavity, thereby improving light utilization. Setting a focusing lens at the light-emitting port further narrows the light-emitting angle of the light-emitting device and increases its brightness. Furthermore, by setting multiple light-emitting ports with perforated patterns, the emission angle is further narrowed, providing a narrow-emission light-emitting device. On the other hand, the transfer device provided by this embodiment of the invention solves the problem of the large light-emitting angle and side light emission of the light-emitting device affecting adjacent areas in the transfer device by setting a narrow-emission light-emitting device on the transfer device, thereby achieving precise unbinding and improving the yield and reliability of micro-device transfer. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the following description of the embodiments will be briefly introduced. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the structure of a light-emitting device provided in the first embodiment of the present invention.

[0020] Figure 2 This is a schematic diagram of another light-emitting device provided in the first embodiment of the present invention.

[0021] Figure 3 This is a schematic diagram of another light-emitting device provided in the first embodiment of the present invention.

[0022] Figure 4This is a schematic diagram of another light-emitting device provided in the first embodiment of the present invention.

[0023] Figure 5 This is a schematic diagram of the light-emitting surface in the first embodiment of the present invention.

[0024] Figure 6 This is a schematic diagram of another light-emitting surface in the first embodiment of the present invention.

[0025] Figure 7 This is a schematic diagram of a light-emitting device provided in the second embodiment of the present invention.

[0026] Figure 8 This is a schematic diagram of another light-emitting device provided in the first embodiment of the present invention.

[0027] Figure 9 This is a schematic diagram of another light-emitting device provided in the first embodiment of the present invention.

[0028] Figure 10 This is a schematic diagram of another light-emitting device provided in the first embodiment of the present invention.

[0029] Figure 11 This is a schematic diagram of a transfer device provided in the third embodiment of the present invention.

[0030] Figure 12 This is a schematic diagram of another transfer device provided in the third embodiment of the present invention.

[0031] Figure 13 This is a schematic diagram of another transfer device provided in the third embodiment of the present invention.

[0032] Figure 14 This is a schematic diagram of another light-emitting device transfer device provided in the third embodiment of the present invention. Detailed Implementation

[0033] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0034] It should be noted that all directional indicators (such as up, down, left, right, front, and back) in the embodiments of the present invention are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicator will also change accordingly.

[0035] In the embodiments of this invention, descriptions involving "first," "second," etc., are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature.

[0036] [First Embodiment]

[0037] See Figure 1 The first embodiment of the present invention provides a light-emitting device 10, which includes, for example, a light-emitting functional layer 11, a first electrode 12, a second electrode 13, and a light-shielding layer 14. The light-emitting functional layer 11 can emit light of various colors, such as infrared, ultraviolet, and blue light. The light-emitting functional layer 11 has a light-emitting surface 1101, allowing the light emitted by the light-emitting functional layer 11 to pass through the light-emitting surface 1101 and be emitted into the external environment. The first electrode 12 is disposed on one side of the light-emitting functional layer 11 and electrically connected to the light-emitting functional layer 11. The second electrode 13 is disposed on the same side of the light-emitting functional layer 11 as the first electrode 12 and is electrically connected to the light-emitting functional layer. Specifically, the first electrode 12 and the second electrode 13 are located on the same side of the light-emitting functional layer 11 and are electrically connected to the light-emitting functional layer 11 at both ends. The light-shielding layer 14 covers the light-emitting surface 1101. The light-shielding layer 14 has a light-emitting port 141 to expose the light emitted by the light-emitting functional layer 11. The area of ​​the light outlet 141 is smaller than the area of ​​the light outlet surface 1101.

[0038] The above technical solution achieves narrow light emission of the light-emitting device by setting a light-shielding layer with a light-emitting hole on the light-emitting surface, thereby making the area of ​​the light-emitting port smaller than the area of ​​the light-emitting surface.

[0039] Specifically, such as Figure 2As shown, the light-emitting functional layer 11 includes, for example, a first-doped semiconductor layer 111, a second-doped semiconductor layer 113, an active layer 112, and a buffer layer 114. The light-emitting surface 1101 is located on the side of the buffer layer 114 away from the second-doped semiconductor layer 113. Light emitted from the active layer 112 passes sequentially through the second-doped semiconductor layer 113 and the buffer layer 114 before exiting from the light-emitting surface 1101. The first-doped semiconductor layer 111 is, for example, an N-type GaN (gallium nitride) layer, and the first electrode 12 electrically connected to the first-doped semiconductor layer 111 is, for example, an N-type electrode. The second-doped semiconductor layer 113 is, for example, a P-type GaN layer, and the second electrode 13 electrically connected to the second-doped semiconductor layer 113 is, for example, a P-type electrode. It is understood that the materials of the first-doped semiconductor layer 111 and the second-doped semiconductor layer 113 can be interchanged, and similarly, the positions of the first electrode 12 and the second electrode 13 can also be interchanged. An active layer 112 is disposed between a first doped semiconductor layer 111 and a second doped semiconductor layer 113. The active layer 112 may be, for example, an InGaN (indium gallium nitride), GaN, or AlGaAs (aluminum gallium arsenide) multi-quantum-well layer, capable of emitting infrared, ultraviolet, or blue light. It is understood that the active layer 112 can also be made of other inorganic semiconductor materials to emit different colors of light; this invention is not limited thereto. A buffer layer 114 is disposed, for example, on the side of the second doped semiconductor layer 113 away from the second electrode 13. The constituent material of the buffer layer 114 may include, for example, aluminum nitride or gallium nitride. Depending on the material of the growth substrate of the buffer layer 114 or the active layer 112, the buffer layer 114 may also be doped with other materials such as aluminum. This invention is not limited thereto. The buffer layer 114 smooths the bottom layer of the light-emitting device, thereby providing a good growth substrate for multiple layer structures disposed on the buffer layer 114. Furthermore, it is understood that the light-emitting device 10 provided by the present invention may also be provided with other functional layers according to actual needs, such as an unintentionally doped gallium nitride layer (u-GaN), a stress relief layer located between the N-type semiconductor layer and the multi-quantum well layer, an electron blocking layer (EBL) located between the multi-quantum well layer and the P-type semiconductor layer, etc. The embodiments of the present invention are not limited thereto.

[0040] Furthermore, the light-shielding layer 14 also covers the other surfaces of the light-emitting functional layer 11, except for the light-emitting surface 1101. The first electrode 12 and the second electrode 13 penetrate the light-shielding layer 14 to achieve electrical conduction with an external power source. This technical solution further reduces side light emission from the light-emitting device by covering multiple sides of the device with light-shielding layers.

[0041] More specifically, such as Figure 3As shown, the light-shielding layer 14 is, for example, a highly reflective metal coating. Specifically, the highly reflective metal coating includes an insulating layer 141 and a metal layer 142. The metal layer 142 is located on the side of the insulating layer 141 away from the light-emitting functional layer 11, that is, the metal layer 142 is disposed between the insulating layer 141 and the light-emitting functional layer 11. The insulating layer 141 is made of a material with good insulating properties, such as silicon oxide. The metal layer 142 is made of a metal material with good reflective properties, such as aluminum, silver, or gold; this invention is not limited to this. The insulating layer 141 is disposed on the light-emitting surface 1101 and multiple surfaces of the light-emitting functional layer 11, excluding the light-emitting surface 1101. It can isolate the metal layer 142 from contact with the light-emitting functional layer 11, providing protection. In addition, the insulating layer 141 can also prevent ineffective light emission caused by the combination of holes and electrons in the first doped semiconductor layer 111 and the second doped semiconductor layer 113 on more than ten sides of the light-emitting device. The above technical solution improves light utilization by setting a metal layer on the side of the insulating layer away from the light-emitting functional layer, which reflects the light emitted by the light-emitting device. Specifically, setting a highly reflective metal coating on the side where the first and second electrodes are located enhances light utilization and resonance in the reflection cavity, which helps to reduce the light emission angle and adapt to display applications requiring narrow light emission and high brightness.

[0042] On the other hand, such as Figure 4 As shown, the light-shielding layer 14 can also be a distributed Bragg reflector (DBR). A distributed Bragg reflector is a structure formed by a periodic arrangement of multiple inorganic materials with different refractive indices. (Refer to...) Figure 4 This invention demonstrates a distributed Bragg emission mirror formed by alternating arrangements of two different inorganic materials. By configuring the light-shielding layer as a distributed Bragg emission mirror, this technique not only shields multiple sides of the light-emitting device but also enhances light reflection, thereby improving light utilization.

[0043] Furthermore, participate Figures 2-4 The light-emitting device 10 also includes a condenser lens 10. The condenser lens 10 is disposed at, for example, the light-emitting port 141 and covers the light-emitting port 141. By providing the condenser lens, the light emission angle of the light-emitting device is further reduced, and the light emission brightness of the light-emitting device is improved.

[0044] In addition, refer to Figure 5 The light-shielding layer 14, for example, covers the light-emitting surface 1101, so that the light-emitting surface 1101 consists of the light-emitting port 141 and the light-shielding layer 14. To further reduce the narrowing of the emission angle, the light-shielding layer covering the light-emitting surface 1101 is, for example, provided with multiple perforated patterns. Therefore, as... Figure 6As shown, the light-emitting port 141 includes, for example, a plurality of sub-light-emitting ports 1411 with a hollowed-out pattern. It is understood that the plurality of sub-light-emitting ports 1411 may, for example, be correspondingly provided with condensing lenses, thereby further narrowing the emission angle and improving brightness. Furthermore, the shape of the hollowed-out pattern can be square, circular, triangular, or other geometric patterns, and the present invention is not limited thereto.

[0045] In summary, the first embodiment of the present invention has the following beneficial effects: By providing a light-shielding layer with a light-emitting port on the light-emitting surface, the area of ​​the light-emitting port is made smaller than the area of ​​the light-emitting surface, thereby achieving narrow light emission of the light-emitting device. Furthermore, providing light-shielding layers on other surfaces of the light-emitting device reduces side light emission. Setting the light-shielding layer as an insulating layer and a metal layer or a distributed Bragg emission mirror structure increases light reflection from multiple sides and resonance in the reflecting cavity, thereby improving light utilization. Providing a focusing lens at the light-emitting port further narrows the light emission angle of the light-emitting device and increases its brightness. Furthermore, by providing multiple light-emitting ports with perforated patterns, the emission angle is further narrowed, providing a narrow-emission light-emitting device.

[0046] [Second Embodiment]

[0047] Reference Figure 7 The second embodiment of the present invention provides a light-emitting device 20, which includes, for example, a first electrode 22, a second electrode 23, a light-shielding layer 24, and a light-emitting functional layer (…). Figure 7 (Not shown in the image). A light-emitting surface 2101 is provided on the light-emitting functional layer. The light-emitting functional layer includes: a first doped semiconductor layer 211, a second doped semiconductor layer 213, an active layer 212, and a buffer layer 214.

[0048] Specifically, the light-emitting surface 2101 and the first electrode 22 are located on the side of the first doped semiconductor layer 211 away from the active layer 212. A light-shielding layer 24 is disposed on the light-emitting surface 2101, and a light-emitting port 141 is provided on the light-shielding layer 24. Light emitted from the active layer 212 passes sequentially through the first doped semiconductor layer 211 and exits from the light-emitting port 141 on the light-emitting surface 2101. The first doped semiconductor layer 211 is, for example, an N-type GaN (gallium nitride) layer, and the first electrode 22 electrically connected to the first doped semiconductor layer 211 is, for example, an N-type electrode. The second doped semiconductor layer 213 is, for example, a P-type GaN layer, and the second electrode 23 electrically connected to the second doped semiconductor layer 213 is, for example, a P-type electrode. It is understood that the materials of the first doped semiconductor layer 211 and the second doped semiconductor layer 213 can be interchanged, for example, and the materials of the corresponding first electrode 22 and second electrode 23 electrically connected to them can also be interchanged; this invention is not limited thereto. The active layer 212 is, for example, an InGaN (indium gallium nitride), GaN, or AlGaAs (aluminum gallium arsenide) multi-quantum-well layer, emitting infrared, ultraviolet, and blue light. It is understood that the active layer 212 can also be made of other inorganic semiconductor materials to emit different colors of light, and this invention is not limited thereto. The buffer layer 214 is, for example, disposed on the side of the second doped semiconductor layer 213 away from the second electrode 23. The constituent material of the buffer layer 214 includes, for example, aluminum nitride or gallium nitride. Depending on the growth substrate of the buffer layer 214 or the material of the active layer 212, the buffer layer 214 can also be doped with other materials such as aluminum. This invention is not limited thereto. The buffer layer 214 smooths the bottom layer of the light-emitting device, thereby providing a good growth substrate for the multiple layer structures disposed on the buffer layer 214. Furthermore, it is understood that the light-emitting device 20 provided by the present invention may also be provided with other functional layers according to actual needs, such as a transparent metal electrode layer, an unintentionally doped gallium nitride layer (u-GaN), a stress relief layer between the N-type semiconductor layer and the multiple quantum well layer, and an electron blocking layer (EBL) between the multiple quantum well layer and the P-type semiconductor layer, etc. The embodiments of the present invention are not limited thereto.

[0049] Furthermore, such as Figure 8 As shown, the light-shielding layer 24 also covers the other surfaces of the light-emitting functional layer except for the light-emitting surface 2101. The first electrode 22 and the second electrode 23 penetrate the light-shielding layer 24 to achieve electrical conduction with an external power source. This technical solution further reduces side light leakage of the light-emitting device by covering multiple sides of the light-emitting device with a light-shielding layer.

[0050] More specifically, such as Figure 9As shown, the light-shielding layer 24 is, for example, a highly reflective metal coating. Specifically, the highly reflective metal coating includes an insulating layer 241 and a metal layer 242. The metal layer 242 is located on the side of the insulating layer 241 away from the light-emitting functional layer. The insulating layer 241 is made of a material with good insulating properties, such as silicon oxide. The metal layer 242 is made of a metal material with good reflective properties, such as aluminum, silver, or gold; this invention is not limited to this. The insulating layer 241 is disposed on the light-emitting surface 2101 and multiple surfaces of the light-emitting device 20 other than the light-emitting surface, and it can isolate the metal layer 242 from contact with the light-emitting functional layer, thus providing protection. Furthermore, the insulating layer 241 can also prevent ineffective light emission caused by the combination of holes and electrons in the first doped semiconductor layer 211 and the second doped semiconductor layer 213 on multiple sides of the light-emitting device. The above technical solution, by providing a metal layer on the side of the insulating layer away from the light-emitting functional layer, can reflect the light emitted by the light-emitting device, improving light utilization. Among them, a highly reflective metal coating is set on the side where the first electrode and the second electrode are located, which improves the utilization of light and the resonance in the reflection cavity, and helps to reduce the light emission angle to adapt to display application scenarios that require narrow light emission and high brightness.

[0051] On the other hand, such as Figure 10 As shown, the light-shielding layer 24 can also be a distributed Bragg mirror. A distributed Bragg mirror is a structure formed by periodically arranging various inorganic materials with different refractive indices. Figure 10 This paper demonstrates a distributed Bragg emission mirror formed by alternating arrangements of two different inorganic materials. By configuring the light-shielding layer as a distributed Bragg emission mirror, not only are multiple sides of the light-emitting device shielded, but light reflection is also enhanced, thereby increasing light utilization.

[0052] Furthermore, such as Figures 8-10 As shown, the light-emitting device 20 also includes, for example, a condenser lens 25. The condenser lens 25 is disposed at, for example, the light-emitting port 241 and covers the light-emitting port 241. By providing the condenser lens, the light emission angle of the light-emitting device is further reduced, thereby improving the brightness.

[0053] Furthermore, since the light-shielding layer 24 covers the light-emitting surface 2101, the light-emitting surface 2101 is composed of a light-emitting port 241 and the light-shielding layer 24. To further reduce the narrowing of the emission angle, the light-shielding layer 24 covering the light-emitting surface 2101 is provided with multiple perforated patterns. Therefore, the light-emitting port 241 includes, for example, multiple sub-light-emitting ports with perforated patterns. The arrangement of the light-emitting ports 241 on the light-emitting surface 2401 refers to the aforementioned first embodiment and... Figure 5 and Figure 6The description of the light-emitting port 141 will not be repeated here. It is understood that multiple sub-light-emitting ports can, for example, be provided with corresponding focusing lenses to further narrow the emission angle and improve brightness. In addition, the shape of the hollow pattern can be square, circular, triangular or other geometric patterns, and the present invention is not limited thereto.

[0054] It is worth noting that the second embodiment of the present invention provides a light-emitting device 20, whose light-emitting surface and two electrodes are located on the same side of the light-emitting functional layer 21, realizing light emission from the top surface of the light-emitting device 20. The first embodiment provides a light-emitting device 10, whose light-emitting surface is located on opposite sides of the two electrodes, realizing light emission from the bottom surface of the light-emitting device 10. Both types of light-emitting devices can serve as narrow light sources for display panels, and due to their different light-emitting surfaces, they can be applied in different scenarios.

[0055] In summary, the second embodiment of the present invention has the following beneficial effects: By providing a light-shielding layer with a light-emitting port on the light-emitting surface, the area of ​​the light-emitting port is made smaller than the area of ​​the light-emitting surface, thereby achieving narrow light emission of the light-emitting device. Furthermore, providing light-shielding layers on other surfaces of the light-emitting device reduces side light emission. Setting the light-shielding layer as an insulating layer and a metal layer or a distributed Bragg emission mirror structure increases light reflection from multiple sides and resonance in the reflecting cavity, thereby improving light utilization. Providing a focusing lens at the light-emitting port further narrows the light emission angle of the light-emitting device, improving its brightness. Furthermore, by providing multiple light-emitting ports with perforated patterns, the emission angle is further narrowed, providing a narrow-emission light-emitting device.

[0056] [Third Embodiment]

[0057] Reference Figure 11 The third embodiment of the present invention provides a transfer device 30, which includes, for example, a transfer substrate 311, a driving device layer 312, a light-emitting device 30, and a first adhesive layer 313. The light-emitting device 30 employs any of the light-emitting devices provided in the first and / or second embodiments described above. The light-emitting device 30 enables narrow light emission, solving the problem of large light emission angles and side light emission affecting adjacent areas, thus providing a micro-device transfer device capable of precise debonding.

[0058] Specifically, the transfer substrate 311 is, for example, a glass substrate, a flexible substrate, or other substrate material with good load-bearing capacity. The driving device layer 312 is, for example, a driving circuit for driving light-emitting devices, such as a TFT (Thin Film Transistor) driving device, a CMOS (Complementary Metal Oxide Semiconductor), or a Liquid Crystal on Silicon (LCOS) substrate. The driving device layer 312 is, for example, disposed on the transfer substrate 311. The light-emitting device 30 is, for example, disposed on the side of the driving device layer 313 away from the transfer substrate 311, and the light-emitting device 30 is, for example, electrically connected to the driving device layer, thereby emitting light under the drive of the driving device layer 312. The first adhesive layer 313 is, for example, a reusable photolytic adhesive such as an IR (Infrared Radiation) or UR (Ultraviolet Rays) photolytic adhesive, which can reduce its viscosity under infrared or ultraviolet irradiation and restore its viscosity when not irradiated, thus achieving reusability. The first adhesive layer 313 is disposed, for example, on the side of the drive device layer 312 away from the transfer substrate 311. Specifically, as Figure 11 As shown, the first adhesive layer 313 is, for example, disposed on the light-emitting device 30, thereby enabling the light-emitting device 30 to precisely de-adhere to the reusable photolytic adhesive covering it. On the other hand, as Figure 12 As shown, the first adhesive layer 313 is, for example, a full-layer structure covering the driving device layer 312 away from the transfer substrate 311, and the first adhesive layer 313 covers the light-emitting device 30. Since the light-emitting device 30 is a narrow light-emitting device, precise debonding of the narrow light-emitting area to the reusable photodegradable adhesive can be achieved. It is understood that the number of light-emitting devices 30 is, for example, multiple.

[0059] The process of transferring miniature light-emitting diodes using the above-described device is as follows: The transfer device 30 adheres multiple miniature devices to be transferred via a first adhesive layer 313. These miniature devices can be, for example, any type of existing miniature light-emitting diode or other miniature components. Since the first adhesive layer 313 is a reusable photolytic adhesive, after the multiple miniature devices adhered to the first adhesive layer 313 are transferred to positions above the target substrate, the driving device layer 312 drives the light-emitting device 30 to emit light to the reusable photolytic adhesive, thereby reducing its adhesiveness and causing the adhered miniature devices to fall onto the target substrate, thus achieving the transfer of the miniature devices. Then, after the driving device layer 312 controls the light-emitting device 30 to turn off, the reusable photolytic adhesive is restored, allowing the above operation to be repeated until all the miniature devices to be transferred are transferred, thus achieving large-scale transfer of miniature devices. Since the light-emitting device 30 adopts any of the light-emitting devices provided in the first and / or second embodiments described above, the light emission angle of the light-emitting device 30 is small. Therefore, the light emitted by the light-emitting device 30 can fall on the reusable photolytic adhesive at the corresponding position, thereby achieving precise dissolution without affecting adjacent areas, improving the microdevice transfer yield and reliability. It is understood that when repair of microdevices at certain locations on the target substrate is required, the driving device layer 312 can also control the emission of the corresponding target light-emitting device 30, thereby achieving repair of the microdevice at the corresponding target location. On the other hand, the type of light emitted by the light-emitting device 30 is set to correspond to the material of the reusable photolytic adhesive. For example, if the reusable photolytic adhesive is an IR photolytic adhesive, then the light-emitting device 30 is a narrow light-emitting device that emits infrared light. Furthermore, other reusable photolytic adhesives can also be used in the second embodiment of the present invention, and the present invention is not limited thereto.

[0060] On the other hand, refer to Figure 13The light-emitting device transfer device 30 may further include, for example, an adhesive substrate 314 and a second adhesive colloid layer 315. The second adhesive colloid layer 315 is, for example, adhered to the side of the driving device layer 312 away from the transfer substrate 311 and covers the light-emitting device 30. The adhesive substrate 314 is, for example, a substrate material with good light transmittance such as a glass substrate or a flexible substrate. The adhesive substrate 314 is, for example, disposed between the first adhesive colloid layer 313 and the second adhesive colloid layer 315. Here, the material of the second adhesive colloid layer 313 is, for example, a pressure-sensitive adhesive or a water-based adhesive with good adhesion properties, used to bond the adhesive substrate 314 and the light-emitting device 30. The second adhesive colloid layer 315 may be disposed on the light-emitting device 30 or be an entire layer structure disposed on the driving device layer 312 and covering the light-emitting device 30; this invention is not limited thereto. Unlike the aforementioned transfer device 30, the first adhesive layer 313 used here is, for example, a non-reusable photolytic adhesive with good adhesion. For instance, the first adhesive layer 313 can be a photolytic adhesive composed of pressure-sensitive adhesive and photosensitive material, which has good adhesion before light exposure, but loses its adhesion after light exposure and cannot be restored. Non-reusable photolytic adhesives are low-cost, have a wide range of choices, and can be debonded by light exposure, eliminating the need to control the light emission color of the light-emitting device. Therefore, as... Figure 13 As shown, the third embodiment of the present invention also provides a transfer device 30 using a non-reusable photolytic adhesive.

[0061] Specifically, the process of transferring microdevices using a non-reusable photolytic adhesive transfer device 30 according to the third embodiment of the present invention is as follows: First, the transfer device 30 adheres multiple microdevices through a first adhesive layer 313, and then transfers them above a target substrate. The transfer device 30 drives a driving device layer 312, thereby driving the light-emitting device 30 to emit light. The light emitted by the light-emitting device 30 passes through a second adhesive layer 315, an adhesive substrate 314, and the first adhesive layer 313. Upon receiving the light, the adhesion of the first adhesive layer 313 decreases, causing the microdevices it adheres to to transfer to the target substrate. Since the first adhesive layer 313 is a non-reusable photolytic adhesive, after one micro-LED transfer is completed, the adhesive substrate 314 needs to be peeled off to separate the adhesive substrate 314 and the first adhesive layer 313 bonded to the adhesive substrate 314. Then, the unused adhesive substrate 314 and the first adhesive layer 313 are bonded to the second adhesive layer 315 away from the driving device layer 312. By repeating the above steps, large-scale micro-device transfer can be completed. It is understood that, for example, an adhesive is also provided between the adhesive substrate 314 and the first adhesive layer 313. The viscosity of this adhesive does not change significantly under the illumination of the light-emitting device 30.

[0062] Furthermore, referring to Figure 14 To achieve more precise unbonding, an adhesive protrusion 3131 is provided on the side of the first unbonding adhesive layer 313 away from the adhesive substrate 314. The adhesive protrusion 3131 is used to bond the micro-device to be transferred. There are multiple adhesive protrusions 3151, and their positions correspond one-to-one with the positions of the corresponding light-emitting devices 30. This allows the light emitted by the light-emitting devices 30 to pass through the second adhesive 315, the adhesive substrate 314, and the first adhesive layer 313 to reach the adhesive protrusion 3151, thereby reducing the adhesion strength between the adhesive protrusion 3151 and the micro-device it is bonded to, and completing the precise transfer of the micro-device.

[0063] In summary, the transfer device provided in the third embodiment of the present invention solves the problem that the light-emitting device causes interference to adjacent areas due to the large light emission angle and side light emission of the light-emitting device in the transfer device by setting the light-emitting device that can achieve narrow light emission on the transfer device, thereby achieving precise unbinding and improving the yield and reliability of micro-device transfer.

[0064] Furthermore, it is understood that the foregoing embodiments are merely illustrative examples of the present invention. Provided that the technical features do not conflict, the structure is not contradictory, and the purpose of the invention is not violated, the technical solutions of the various embodiments can be arbitrarily combined and used.

[0065] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A transfer device, characterized in that, include: Transfer substrate; A driving device layer is disposed on the transfer substrate; A light-emitting device is disposed on the side of the driving device layer away from the transfer substrate and is electrically connected to the driving device layer; A first adhesive layer is disposed on the side of the drive device layer away from the transfer substrate; The first adhesive layer is a reusable photolytic adhesive; The first adhesive colloid layer covers the light-emitting device; The light-emitting device includes: The light-emitting functional layer is provided with a light-emitting surface; The first electrode is disposed on one side of the light-emitting functional layer and is electrically connected to the light-emitting functional layer; The second electrode is disposed on the same side of the light-emitting functional layer as the first electrode and is electrically connected to the light-emitting functional layer. A light-shielding layer is provided on the light-emitting surface, and a light-emitting port is provided on the light-emitting layer to expose the light emitted by the light-emitting functional layer. The area of ​​the light-emitting port is smaller than the area of ​​the light-emitting surface. The light-emitting port includes a plurality of sub-light-emitting ports with hollow patterns. Adjacent sub-light-emitting ports are isolated from each other by the body material of the light-shielding layer.

2. The transfer device as claimed in claim 1, characterized in that, The light-emitting functional layer includes: A first doped semiconductor layer is connected to the first electrode; A second doped semiconductor layer is connected to the second electrode; An active layer is disposed between the first doped semiconductor layer and the second doped semiconductor layer; A buffer layer is located on the side of the second doped semiconductor layer opposite to the second electrode; Wherein, the light-emitting surface and the first electrode are located on the side of the first doped semiconductor layer away from the active layer, the first electrode penetrates the light-shielding layer and is connected to the first doped semiconductor layer, and the second electrode is located on the side of the second doped semiconductor layer away from the buffer layer; the light-shielding layer also covers the other surfaces of the light-emitting functional layer except for the light-emitting surface, and the first electrode and the second electrode respectively penetrate the light-shielding layer.

3. The transfer device as claimed in claim 1, characterized in that, The light-shielding layer includes an insulating layer and a metal layer, with the metal layer located on the side of the insulating layer away from the light-emitting functional layer.

4. The transfer device as claimed in claim 1, characterized in that, The light-shielding layer is a distributed Bragg emission mirror.

5. The transfer device as claimed in claim 1, characterized in that, The light-emitting device also includes a focusing lens, which is disposed at the light outlet and covers the light outlet.

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