Shower head assembly
By designing the spray head assembly, the main cover and spray head heater are used to supply RF power and process gas. Combined with the cooling flow path, the problem of substandard chamber temperature during substrate processing is solved, and proper heating and smooth processing of the substrate are achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-12-14
- Publication Date
- 2026-04-07
AI Technical Summary
When the substrate is initially introduced into the chamber, the internal temperature of the chamber does not reach the appropriate temperature, which makes it impossible to smoothly carry out the so-called 'first effect' of the substrate processing process, and it is difficult to configure heating units on the lower surface of the substrate.
A spray head assembly is adopted, including a main cover and a spray head heater. The substrate is heated by RF power supply and process gas, and a cooling flow path is set between the spray head heater and the cover to avoid damage to the O-ring.
It effectively prevents the 'first effect', ensures that the substrate reaches the appropriate process temperature, and prevents O-ring damage, thus achieving smooth substrate processing.
Smart Images

Figure CN116266528B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to a showerhead assembly, and more particularly, to a showerhead assembly that prevents a first effect in which a temperature inside a chamber does not reach a proper temperature when a substrate is initially introduced into the chamber after a process starts, and thus can heat the substrate to a proper process temperature. BACKGROUND
[0002] Generally, a conventional substrate processing apparatus can perform a process such as deposition, etching, etc. on an upper surface of a substrate, or perform a process such as deposition, etching, etc. on a lower surface of a substrate.
[0003] In this case, a conventional substrate processing apparatus that provides a process such as deposition, etching, etc. on an upper surface of a substrate can cause a so-called "first effect" in which a temperature inside a chamber does not reach a proper temperature when a substrate is initially introduced into the chamber, and thus can not smoothly perform a process on the substrate.
[0004] In addition, another conventional substrate processing apparatus that provides a process such as deposition, etching, etc. on a lower surface of a substrate can have difficulty in additionally providing a unit that heats a substrate because a process equipment, etc. is disposed on the lower surface of the substrate. SUMMARY
[0005] [Problems to be Solved by the Invention]
[0006] The present application has been made to solve the above problems, and an object of the present application is to provide a showerhead assembly that prevents a first effect in which a temperature inside a chamber does not reach a proper temperature when a substrate is initially introduced into the chamber after a process starts, and thus can heat the substrate to a proper process temperature.
[0007] [Means for Solving the Problems]
[0008] The object of the present application as described above is achieved by a showerhead assembly, the showerhead assembly being characterized by including a main cover connected to a chamber lid and supplying radio frequency (RF) power, and a showerhead heater connected to a lower portion of the main cover to be electrically connected to the main cover, supplying a process gas toward an inside of the chamber, and heating a substrate.
[0009] Here, the main cover can include a main plate connected to the chamber lid in an insulating manner, and a cover plate connected to an upper portion of the main plate and protruding upward.
[0010] On the other hand, the shower head heater can be arranged at a predetermined interval apart from the main plate at a lower portion of the main plate.
[0011] In addition, a first cooling flow path can be provided in the main plate, and an RF power supply for supplying RF power can be provided.
[0012] Further, the shower head heater can include a face plate formed with a plurality of injection holes for injecting process gas toward the substrate, a back plate connected to an upper portion of the face plate and having a plurality of heater portions, and a stem connecting the back plate and the cover plate and protruding toward an upper portion.
[0013] In this case, the shower head assembly can further include an O-ring arranged between an uppermost surface of the protruding portion of the stem and a lower surface of the cover plate to seal between the stem and the cover plate, and a second cooling flow path can be further provided in the cover plate arranged adjacent to the O-ring.
[0014] On the other hand, the shower head assembly can be arranged with a process gas supply tube supplying process gas through the stem between the back plate and the face plate, and a power load supplying power to the heater portions.
[0015] In addition, the shower head assembly can be provided with a curtain gas supply flow path through the cover plate to supply curtain gas, and the curtain gas supply flow path can supply curtain gas along an outer circumferential surface of the shower head heater through a curtain gas connection flow path.
[0016] On the other hand, the curtain gas connection flow path can include a first flow path between a lower surface of the cover plate and an upper surface of the main plate, a second flow path between an outer sidewall of the stem and an inner sidewall of an opening portion of the main plate, a third flow path between an upper surface of the back plate and a lower surface of the main plate, and a fourth flow path between the shower head heater and a chamber top cover.
[0017] In addition, a hollow portion can be formed in an inner side of the stem.
[0018] [Effects of the Invention]
[0019] According to the present invention having the above-described configuration, the first effect can be prevented by providing heat using the shower head heater, and further, the substrate can be heated to an appropriate process temperature.
[0020] In addition, according to the present invention, by arranging the heater portions and the O-ring as far apart as possible and further providing a cooling flow path, damage or breakage of the O-ring due to heat from the heater portions can be prevented. BRIEF DESCRIPTION OF DRAWINGS
[0021] Figure 1 is a perspective view of a showerhead assembly according to an embodiment of the present application.
[0022] Figure 2 is an exploded perspective view of the showerhead assembly.
[0023] Figure 3 is a side cross-sectional view of the showerhead assembly. DETAILED DESCRIPTION
[0024] Hereinafter, a structure of a showerhead assembly according to an embodiment of the present application will be described in detail with reference to the accompanying drawings.
[0025] Figure 1 is a perspective view of a showerhead assembly 1000 according to an embodiment of the present application, Figure 2 is an exploded perspective view of the showerhead assembly 1000, and Figure 3 is a side cross-sectional view of the showerhead assembly 1000.
[0026] Referring to Figures 1 to 3 , the showerhead assembly 1000 can include a main cover 300 connected to a chamber top cover 10 and supplying RF power, and a showerhead heater 500 connected to a lower portion of the main cover 300 to be electrically connected with the main cover 300, supplying process gas toward an inside of a chamber (not shown) and heating a substrate (not shown).
[0027] The showerhead assembly 1000 according to the present application is generally composed of the main cover 300 and the showerhead heater 500, and supplies RF power so that a substrate process can be performed using plasma. In this case, the main cover 300 of the showerhead assembly 1000 supplies RF power, and the showerhead heater 500 is electrically connected with the main cover 300 to supply RF power.
[0028] Accordingly, the showerhead heater 500 is electrically connected with the main cover 300 to form equipotential. Even in a case where plasma is generated between the showerhead heater 500 and a lower electrode inside a chamber to process a substrate, so-called "parasitic plasma" is not generated between the main cover 300 and the showerhead heater 500. Hereinafter, this will be described in detail.
[0029] The main cover 300 can include a main plate 340 connected to the chamber top cover 10 in an insulated manner, and a cover plate 310 connected to an upper portion of the main plate 340 and protruding upward. Although the main plate 340 and the cover plate 310 are shown as separate components in the drawings, this is not limited thereto, and of course the main plate 340 and the cover plate 310 can be formed of a single component.
[0030] The mainboard 340 may have an opening 344 formed in the central part and may be circular. Here, "circular" is only one example for illustration, and it may be composed of various shapes.
[0031] An RF power supply unit 342, which supplies RF power as described above, may be configured on the motherboard 340. RF power provided from the RF power unit (not shown) is supplied to the motherboard 340 through the RF power supply unit 342.
[0032] The main board 340 is insulated from the chamber top cover 10. For example, a first insulator 600 may be arranged between the main board 340 and the chamber top cover 10 to insulate them.
[0033] On the other hand, a first cooling flow path (344, 346) for cooling water to flow can be provided in the main board 340. When the spray head heater 500 heats the substrate, the first cooling flow path (344, 346) can also be used to cool the temperature of the main board 340, thereby preventing overheating.
[0034] The cover plate 310 is connected to the upper surface of the main plate 340. The cover plate 310 is provided in a shape that protrudes upwards. A process gas supply hole 315 for supplying process gases, etc., is formed in the center of the protruding upper surface of the cover plate 310. Process gases, etc., are supplied to the spray head heater 500 through the process gas supply hole 315.
[0035] On the other hand, a second cooling flow path 318 for cooling water to flow is provided in the cover plate 310. The second cooling flow path 318 maintains the temperature of the various O-rings (810, 820) while cooling the cover plate 310, thereby preventing the O-rings (810, 820) from breaking.
[0036] That is, the cover plate 310 is connected to the spray head heater 500 and the second insulator 100 described below, and various O-rings (810, 820) for sealing are arranged between the cover plate 310 and the valve stem 510 of the spray head heater 500 and between the second insulator 100.
[0037] In this configuration, the O-ring 810 between the valve stem 510 and the cover plate 310 can be disposed between the uppermost part of the protrusion of the valve stem 510 and the lower surface of the cover plate 310. Additionally, the O-ring 820 between the cover plate 310 and the second insulator 100 can be disposed between the uppermost part of the cover plate 310 and the lower surface of the second insulator 100.
[0038] Assuming the cover plate 310 is simply provided in a planar shape, the spacing between the spray head heater 500 and the O-rings (810, 820) is too close, so that the O-rings (810, 820) may be damaged by heat misfire emanating from the spray head heater 500.
[0039] Therefore, in order to solve this problem, the cover plate 310 and the valve stem 510 are configured to protrude upwards. Furthermore, by arranging O-rings (810, 820) at the top of the protrusions of the cover plate 310 and the valve stem 510, the distance between the heater part 532 of the spray head heater 500 and the O-rings (810, 820) is arranged as far as possible, thereby initially preventing damage to the O-rings (810, 820).
[0040] In addition, the present invention can prevent the O-rings (810, 820) from overheating by arranging a second cooling flow path 318 in the cover plate 310, thereby preventing the O-rings (810, 820) from breaking for a second time.
[0041] The second insulator 100 can be connected to the upper part of the cover plate 310. The second insulator 100 is provided to insulate the cover plate 310 from other components.
[0042] A fastening hole 130 is formed in the second insulator 100, and it can be connected to the upper surface of the cover plate 310 by a fastening unit (140) such as a screw. In this case, an opening 110 can be formed in the inner central part of the second insulator 100. Therefore, as will be described below, various conduits for supplying process gases, etc., can be arranged through the opening 110.
[0043] On the other hand, the spray head heater 500 can be arranged by connecting to the lower part of the main cover 300. That is, the spray head heater 500 can be arranged at a predetermined interval from the main board 340 at the lower part of the main board 340.
[0044] For example, the spray head heater 500 may include: a panel 550 having spray holes 552 for spraying process gas toward the substrate; a back plate 530 connected to the upper part of the panel 550 and having a plurality of heater portions 532; and a valve stem 510 connecting the back plate 530 and the cover plate 310 and protruding upward.
[0045] The panel 550 is arranged facing the substrate and process gases are supplied to the substrate through the injection hole 552.
[0046] The back plate 530 is arranged on the upper part of the panel 550. In this case, the back plate 530 is arranged separately from the panel 550, and the space between the back plate 530 and the panel 550 forms a dispersion space 556 in which process gases and the like are dispersed.
[0047] On the other hand, the spray head assembly 1000 according to the invention has a plurality of heater sections 532 in the back plate 530 to provide heat.
[0048] Conventional substrate processing apparatuses that perform processes such as deposition on the upper surface of a substrate may experience a so-called "first effect"—where the temperature inside the chamber fails to reach an appropriate level when the substrate is initially introduced into the chamber, hindering the smooth processing of the substrate. In this invention, by heating the interior of the chamber using the backplate 530, the aforementioned first effect can be minimized.
[0049] Furthermore, conventional substrate processing apparatuses that perform deposition or other processes on the lower surface of the substrate have deposition equipment or similar components mounted on the lower surface of the substrate, making it difficult to additionally configure a unit for heating the substrate. In this invention, by utilizing the backplate 530 to heat the substrate to the appropriate temperature required for the process, the substrate processing can be performed smoothly.
[0050] On the other hand, the valve stem 510 connects the back plate 530 and the cover plate 310 to each other. In this case, the valve stem 510 provides both physical and electrical connection between the back plate 530 and the cover plate 310. Therefore, the RF power supplied to the motherboard 340 is supplied to the back plate 530 and the front panel 550 via the cover plate 310 and the valve stem 510.
[0051] The valve stem 510 has an upwardly projecting shape within the back plate 530. In this case, the external shape of the valve stem 510 is formed in a manner corresponding to the internal shape of the cover plate 310 described above.
[0052] As described above, the heater section 532 is spaced as far away as possible from the back plate 530 by arranging O-rings (810, 820) at the uppermost protrusion of the valve stem 510. This has already been described, so a repeating explanation is omitted.
[0053] On the other hand, a process gas supply pipe 316 can be arranged through the valve stem 510. The process gas supply pipe 316 can be arranged through the opening 110 of the second insulator 100, the process gas supply hole 315 of the cover plate 310, and the through hole 514 of the valve stem 510. Process gas for processing the substrate is supplied to the process gas supply pipe 316. In this case, the process gas may contain an inert gas. For example, in a substrate processing apparatus for depositing on the lower surface of a substrate, the spray head assembly 1000 according to the present invention can supply inert gas towards the upper part of the substrate through the process gas supply pipe 316.
[0054] The lower end of the process gas supply pipe 316 is connected to the dispersion space 556 between the back plate 530 and the front panel 550, and process gas is supplied through the dispersion space 556.
[0055] On the other hand, an electrical load 320 that supplies power to the heater section 532 may be arranged inside the valve stem 510.
[0056] For example, a first connection hole 314 can be formed in the cover plate 310, and a second connection hole 512 corresponding to the first connection hole 314 can be formed in the valve stem 510. The electrical load 320 can be arranged through the first connection hole 314 and the second connection hole 512.
[0057] In this case, a fixing part 322 for fixing the electrical load 320 can be provided on the inner side of the valve stem 510. Since RF power is supplied to the valve stem 510 as described above, the fixing part 322 is preferably made of an insulating material, thereby providing insulation from the valve stem 510.
[0058] The lower end of the electrical load 320 is connected to the heater section 532 to provide the required power to the heater section 532.
[0059] On the other hand, an air-filled hollow portion 518 is provided inside the valve stem 510. That is, in addition to the process gas supply pipe 316 and the electrical load 320, an air-filled hollow portion 518 is provided inside the valve stem 510. This hollow portion 518 serves to prevent the heat from the heater section 532 from being transferred to the O-rings (810, 820) and the like at the top of the valve stem 510, thus preventing the loss of heat insulation space. Furthermore, even when a hollow portion 518 is provided inside the valve stem 510, no RF power loss occurs because the RF power is supplied along the surface of the valve stem 510 due to the skin effect.
[0060] On the other hand, the spray head assembly 1000 according to the present invention can supply a curtain gas containing inert gas or the like along the outer peripheral surface of the spray head heater 500. The curtain gas ensures that the process gas supplied from the panel 550 is supplied only toward the upper surface of the substrate, and prevents the process gas from being supplied to other areas.
[0061] In the case of a substrate processing apparatus according to the present invention, where the spray head assembly 1000 is used to deposit a thin film on the lower surface of a substrate, the curtain gas and inert gas can be supplied toward the upper surface of the substrate via the panel 550. The inert gas supplied from the panel 550 prevents deposition on the upper surface of the substrate, and the curtain gas can suppress the phenomenon of process gas backflow caused by the merging of process gas flowing upward from the substrate along its periphery and inert gas flowing downward.
[0062] like Figure 3 As shown, in order to supply the air curtain air, an air curtain air supply path 312 can be configured to supply the air curtain air through the cover plate 310.
[0063] Specifically, an air curtain air supply hole 120 is formed in the second insulator 100, and the upper end of the air curtain air supply flow path 312 of the cover plate 310 is connected to the air curtain air supply hole 120.
[0064] On the other hand, the lower end of the air curtain air supply flow path 312 is provided through the air curtain air connection flow path 700, so that the air curtain air is supplied along the outer peripheral surface of the spray head heater 500.
[0065] Here, the air curtain gas connection flow path 700 is not formed by individual gas pipes or pipes, but is provided by utilizing the space or interval between the constituent elements described above. Therefore, the cost and time required to construct individual flow paths can be reduced, and a simpler configuration can be used to form the flow path.
[0066] Specifically, the air curtain air connection flow path 700 may be composed of the following: a first flow path 705 between the lower surface of the cover plate 310 and the upper surface of the main plate 340, a second flow path 710 between the outer side wall of the valve stem 510 and the inner side wall of the opening 344 of the main plate 340, a third flow path 712 between the upper surface of the back plate 530 and the lower surface of the main plate 340, and a fourth flow path 714 between the spray head heater 500 and the chamber top cover 10.
[0067] The aforementioned air curtain air supply path 312 can be connected from the upper surface to the lower surface of the cover plate 310. In this case, the lower surface of the cover plate 310 is partially separated from the upper surface of the main plate 340 to form the first flow path 705, and the air curtain air supply path 312 can be connected to the first flow path 705.
[0068] On the other hand, the valve stem 510 can be spaced apart from the inner surface of the opening 344 of the main board 340 by a predetermined distance and connected to the cover plate 310. In this case, the space between the outer wall of the valve stem 510 and the inner wall of the opening 344 of the main board 340 can form a second flow path 710.
[0069] The second flow path 710 can be connected at its lower end to a third flow path 712 between the upper surface of the back plate 530 and the lower surface of the main plate 340. Additionally, the third flow path 712 is connected to a fourth flow path 714 between the spray head heater 500 and the chamber top cover 10. Since a first insulator 600 is arranged on the chamber top cover 10 to insulate the main plate 340, the fourth flow path 714 can substantially be formed between the spray head heater 500 and the first insulator 600.
[0070] Therefore, the air curtain air supplied through the air curtain air supply flow path 312 can be supplied along the outer peripheral surface of the spray head heater 500 via the first flow path 705, the second flow path 710, the third flow path 712 and the fourth flow path 714.
[0071] On the other hand, if the width of the fourth flow path 714, i.e. the width between the spray head heater 500 and the first insulator 600, is too large, a large amount of air curtain air is required to maintain the effect of the air curtain air. Therefore, the width of the fourth flow path 714 can be maintained at an interval of about 1 mm to 10 mm, preferably at an interval of about 4 mm to 8 mm.
[0072] While the present invention has been described above with reference to preferred embodiments, those skilled in the art can make various modifications and alterations to the invention without departing from the spirit and scope of the invention as set forth in the foregoing claims. Therefore, it should be considered that any modifications that substantially include the constituent elements of the claims are included within the technical scope of the present invention.
Claims
1. A spray head assembly, characterized in that, include: The main cover is connected to the top cover of the chamber and supplies radio frequency power; as well as A spray head heater, connected to the lower part of the main cover for electrical connection, supplies process gas toward the interior of the chamber and heats the substrate. The main cover includes: a main board, which is insulated from the top cover of the chamber; And a cover plate, which is connected to the upper part of the motherboard and protrudes towards the upper part. The spray head heater is electrically connected to the main cover to form an equipotential, so that no parasitic plasma is generated between the main cover and the spray head heater.
2. The spray head assembly according to claim 1, characterized in that, The spray head heater is arranged at a predetermined interval from the main board at the lower part of the main board.
3. The spray head assembly according to claim 1, characterized in that, The motherboard is configured with a first cooling flow path and an RF power supply unit for supplying RF power.
4. The spray head assembly according to claim 1, characterized in that, The spray head heater includes: A panel having injection holes for injecting process gas toward the substrate; a back plate connected to the upper part of the panel and having a plurality of heater sections; and a valve stem connecting the back plate and the cover plate and protruding toward the upper part.
5. The spray head assembly according to claim 4, characterized in that, Also includes: An O-ring is disposed between the uppermost part of the valve stem protrusion and the lower surface of the cover plate to seal the valve stem and the cover plate. A second cooling flow path is also configured in the cover plate, which is arranged adjacent to the O-ring.
6. The spray head assembly according to claim 4, characterized in that, A process gas supply pipe and an electrical load are arranged. The process gas supply pipe passes through the valve stem and supplies process gas between the back plate and the front panel. The electrical load supplies power to the heater section.
7. The spray head assembly according to claim 4, characterized in that, include: An air curtain air supply path extends through the cover plate to supply air curtain air, and the air curtain air supply path supplies air curtain air along the outer peripheral surface of the spray head heater via an air curtain air connection path.
8. The spray head assembly according to claim 7, characterized in that, The air curtain air connection flow path includes a first flow path between the lower surface of the cover plate and the upper surface of the main plate, a second flow path between the outer side wall of the valve stem and the inner side wall of the opening of the main plate, a third flow path between the upper surface of the back plate and the lower surface of the main plate, and a fourth flow path between the spray head heater and the top cover of the chamber.
9. The spray head assembly according to claim 4, characterized in that, A hollow section is formed on the inner side of the valve stem.
Citation Information
Patent Citations
Apparatus including showerhead electrode and heater for plasma processing
CN1950545A