Electrical contact connection method and system

Abstract

The application discloses an electric contact connection method and system. The electric contact connection method comprises the following steps: contacting a first probe with a first film layer; moving a second probe towards the first film layer and monitoring the resistance value between the first probe and the second probe in real time; monitoring the first mutation of the resistance value and continuing to move the second probe; monitoring the second mutation of the resistance value and stopping the movement of the second probe when the second mutation occurs, at which time the second probe contacts a second film layer. In the electric contact connection method and system, the change of the resistance value between the first probe and the second probe is monitored in real time, the second probe can be accurately moved to the interface between the first film layer and the second film layer, and the second probe and the second film layer are electrically connected well without damaging the second film layer.

Description

Technical Field

[0001] This invention belongs to the field of quantum information, especially the field of quantum chip detection, and specifically relates to an electrical contact connection method and system. Background Technology

[0002] The key structure on a superconducting quantum chip is the superconducting quantum bit, and the key structure of a superconducting quantum bit is the Josephson junction. A Josephson junction is a special device formed by two electrodes separated by a thin insulator. To ensure the performance of a superconducting quantum chip, the frequency parameters of the superconducting quantum bits must be strictly controlled. The room-temperature resistance characterization of the superconducting quantum bit is important information reflecting its frequency parameters, and the resistance of the Josephson junction is crucial for characterizing the room-temperature resistance of the superconducting quantum bit; therefore, accurate measurement of the Josephson junction resistance is necessary.

[0003] Currently, there is no specific resistance measurement scheme for superconducting quantum chips. Resistance measurement in superconducting quantum chips currently employs the traditional semiconductor chip resistance measurement scheme, which involves inserting a probe into the internal structure of the device to form direct contact and measure resistance. This is primarily because an oxide layer forms on the electrodes of a Josephson junction. This oxide layer is undesirable but difficult to remove; therefore, it is necessary to penetrate the oxide layer to accurately obtain the resistance between the electrodes. Otherwise, the presence of the oxide layer will interfere with the measurement results. However, inserting a probe into the electrodes of a Josephson junction will cause performance loss in the superconducting quantum bit. Using the semiconductor chip resistance measurement scheme inevitably leads to the probe penetrating the electrodes, and in severe cases, the probe may even puncture the electrodes, directly damaging the Josephson junction. Therefore, the traditional semiconductor chip resistance measurement scheme is not suitable for superconducting quantum chips. Invention Content

[0004] The purpose of this invention is to provide an electrical contact connection method and system to solve the problem in the prior art that probes are not easy to make precise contact with the target film layer.

[0005] To achieve the above and other related objectives, the present invention provides the following examples:

[0006] 1. Example 1 provided by the present invention: an electrical contact connection method, comprising:

[0007] The first probe is brought into contact with the first film layer;

[0008] The second probe is moved toward the first film layer, and the resistance value between the first probe and the second probe is monitored in real time.

[0009] Monitor the first sudden change in the resistance value and continue moving the second probe;

[0010] The second abrupt change in the resistance value is monitored, and the movement of the second probe is stopped when the second abrupt change occurs, at which point the second probe comes into contact with the second film layer.

[0011] 2. Example 2 provided by the present invention: including Example 1, wherein the second film layer is an electrode of a Josephson junction, and the first film layer is an oxide layer on the surface of the electrode.

[0012] 3. Example 3 provided by the present invention: including Example 2, wherein the puncture position of the first probe is farther away from the Josephson node than the puncture position of the second probe.

[0013] 4. Example 4 provided by the present invention includes Example 1, wherein the pressure on the first probe is monitored to make the first probe contact the first membrane layer.

[0014] 5. Example 5 provided by the present invention: including Example 1, wherein the first abrupt change is a decrease in resistance value from above 1MΩ to 1KΩ to 10KΩ.

[0015] 6. Example 6 provided by the present invention: including Example 1, wherein the second mutation is a change in resistance value to 10Ω to 1000Ω.

[0016] 7. Example 7 provided by the present invention includes Example 1, wherein the thickness of the first film layer is between 0.1 nm and 5 nm.

[0017] 8. Example 8 provided by the present invention: an electrical contact connection system, comprising:

[0018] A displacement adjustment assembly, comprising a first probe and a second probe disposed on the displacement adjustment assembly;

[0019] A resistance monitoring module, wherein both the first probe and the second probe are connected to the resistance monitoring module; and

[0020] The chip displacement stage, wherein the first probe and the second probe are respectively able to move relative to the chip displacement stage under the drive of the displacement adjustment component.

[0021] 9. Example 9 provided by the present invention: including Example 8, wherein the resistance monitoring module is used to monitor the detected resistance value in real time, and control the movement of the displacement adjustment component when the resistance value changes abruptly.

[0022] 10. Example 10 provided by the present invention includes Example 8, wherein it further includes a micro-force sensor, the micro-force sensor being disposed on the displacement adjustment assembly, and at least the first probe being disposed on the probe of the micro-force sensor.

[0023] 11. Example 11 provided by the present invention includes Example 8, wherein the first probe and the second probe are tungsten needles or tungsten alloy needles, the surfaces of the first probe and the second probe may be electroplated with a protective layer, and the first probe is thicker than the second probe.

[0024] 12. Example 12 provided by the present invention includes Example 11, wherein the diameter of the shank of the first probe is between 10-500 μm and the diameter of the tip is between 0.5-15 μm, and the diameter of the shank of the second probe is between 5-50 μm and the diameter of the tip is between 0.2-1 μm.

[0025] In the example provided by the present invention, by monitoring the change in resistance between the first probe and the second probe in real time, the second probe can be accurately inserted to the interface between the first film layer and the second film layer, so that the second probe and the second film layer can achieve a good electrical connection without damaging the second film layer.

[0026] In the example provided by the present invention, the second probe can be accurately inserted to the interface between the oxide layer and the electrode of the Josephson junction electrode, so that the second probe can achieve a good electrical connection with the electrode of the Josephson junction without damaging the electrode and avoiding affecting the performance of the Josephson junction. Attached Figure Description

[0027] Figure 1 A schematic diagram of the structure of a quantum bit in a superconducting quantum chip;

[0028] Figure 2 This is a schematic diagram of another type of qubit structure in a superconducting quantum chip;

[0029] Figure 3 This is a schematic diagram of the Josephson knot structure;

[0030] Figure 4 This is a flowchart illustrating an electrical contact connection method provided in one embodiment of the present invention. Figure 1 ;

[0031] Figure 5 This is a flowchart illustrating an electrical contact connection method provided in one embodiment of the present invention. Figure 2 ;

[0032] Figure 6 This is a schematic diagram of the needle insertion position provided in one embodiment of the present invention;

[0033] Figure 7 This is a schematic diagram of the structure of an electrical contact connection system provided in one embodiment of the present invention. Detailed Implementation

[0034] The specific embodiments of the present invention will now be described in more detail with reference to the accompanying drawings. The advantages and features of the present invention will become clearer from the following description and claims. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of the present invention.

[0035] In the description of this invention, it should be understood that the terms "center", "upper", "lower", "left", "right", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0036] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0037] Depending on the different physical systems used to construct qubits, qubits can be physically realized in various ways, including superconducting quantum circuits, semiconductor quantum dots, ion traps, diamond vacancies, topological quantum, and photons.

[0038] Superconducting quantum computing is currently the most advanced and best-performing method for realizing solid-state quantum computing. For superconducting quantum chips, the structure of a qubit can employ a single capacitor to ground, i.e., a superconducting quantum interference device with one end grounded and the other end connected to this capacitor. This capacitor is often a cross-shaped parallel-plate capacitor. (See also...) Figure 1 As shown, capacitor plate C q Surrounded by a ground plane (GND), and capacitor plate C q With a gap between it and the ground plane (GND), one end of the superconducting quantum interference device Squid is connected to the capacitor plate C. q The other end is connected to the ground plane (GND). In addition, the structure of a qubit can also employ two capacitors to ground, and a superconducting quantum interference device connected to each of these two capacitors. See [link to documentation]. Figure 2 As shown, the first capacitor plate C q1 The second capacitor plate C q2 The superconducting quantum interference device Squid is surrounded by a ground plane (GND), and the first capacitor plate C q1 The second capacitor plate C q2There is a gap between the superconducting quantum interference device Squid and the ground plane (GND). One end of Squid is connected to the first capacitor plate C. q1 The other end is connected to the second capacitor plate C. q2 .

[0039] The key structure on a superconducting quantum chip is the superconducting qubit, and the key structure of a superconducting qubit is the Josephson junction. The performance and quality of the Josephson junction directly affect the performance of the qubit. A Josephson junction is a special device formed by two electrodes separated by a thin insulator, such as... Figure 3 In the design, the Josephson junction 41 includes a first electrode 4011 and a second electrode 4012, and an insulator between the first electrode 4011 and the second electrode 4012. The first electrode 4011 can extend from the Josephson junction 41 to one side, and the second electrode 4012 can extend from the Josephson junction 41 to the opposite side. To ensure the performance of the superconducting quantum chip, the frequency parameters of the superconducting quantum bits must be strictly controlled. The room-temperature resistance characterization of the superconducting quantum bits is important information reflecting the frequency parameters, and the resistance of the Josephson junction is key to the room-temperature resistance characterization of the superconducting quantum bits. Therefore, accurate measurement of the Josephson junction resistance is needed to confirm its compliance. Currently, there is no specific resistance measurement scheme for superconducting quantum chips. This invention mainly addresses how to accurately insert the electrode at the portion extending from the Josephson junction.

[0040] Example 1

[0041] To test a Josephson junction, an electrical connection needs to be established with the junction's electrodes. An oxide layer forms on the electrode surface. One feasible method to achieve a good electrical connection is to pierce the oxide layer with a probe to make contact with the electrode. However, ensuring a good electrical connection between the probe and the junction's electrodes without damaging the junction is a crucial step.

[0042] Embodiment 1 of the present invention provides an electrical contact connection method. Using this method, the probe can be precisely positioned at the interface between two film layers, such as the interface between the electrode and the oxide layer.

[0043] Please refer to the following. Figure 4 This embodiment includes the following:

[0044] In this embodiment of the invention, the electrical contact connection method includes:

[0045] S1001, move the probe toward the first film layer and monitor the pressure on the probe in real time;

[0046] S1002, monitor the first sudden change in pressure and continue moving the probe;

[0047] S1003, monitor the second sudden change in pressure, and stop the movement of the probe when the second sudden change occurs, at which point the probe comes into contact with the second membrane layer.

[0048] In one specific implementation, the second film layer is an electrode of a Josephson junction, and the first film layer is an oxide layer on the surface of the electrode.

[0049] For example, the electrode can be made of materials such as aluminum or niobium. In addition, other superconducting material layers can also be used in this invention.

[0050] The thickness of the first film layer can be between 0.1nm and 5nm, for example, 0.3nm, 0.5nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 1.7nm, 2nm, 2.3nm, 2.6nm, 2.9nm, 3nm, 3.1nm, 3.4nm, 3.6nm, 3.8nm, 4nm, 4.3nm, 4.5nm, 4.8nm, etc.

[0051] To reduce the impact of the external environment, in this embodiment of the invention, the process can be carried out in a cleanroom equipped with a vibration isolation platform and a soundproof enclosure.

[0052] In S1001, under normal circumstances, the probe does not initially come into contact with any other external objects, so it is not subjected to pressure, and the monitoring result should be 0.

[0053] As an example, in S1002, the first abrupt change is the pressure changing from 0 to 0.1-10 μN, denoted as a μN. When the first abrupt change occurs, it means that the probe and the first film layer change from a non-contact state to a contact state.

[0054] The limiting factors for the first pressure surge include probe shape, material, and film thickness. Generally, the softer the probe material, the blunter the tip, and the thicker the film, the greater the pressure. It is clearly understood that the hardness of the probe must be at least greater than the hardness of the first film.

[0055] Upon the first mutation, the probe continues to move, penetrating deeper into the first membrane layer. During this process, the detected pressure typically increases continuously.

[0056] As the probe penetrates deeper, when the pressure undergoes a second sudden change, it is assumed that the probe has just passed through the first membrane layer and is in contact with the second membrane layer.

[0057] As an example, in S1003, the second mutation is the first mutation in which the pressure becomes 10-100 times.

[0058] The multiple of the second pressure jump varies depending on the actual material and the thickness of the oxide layer. For example, for aluminum films, one possible multiple is 10 to 12 times; but for niobium, one possible multiple is 50 to 60 times.

[0059] For example, for an aluminum film, the first abrupt change is the pressure changing from 0 to 5 μN. As the probe continues to move, for example, when the pressure changes to 6 μN, it can be considered that the probe is still in the first film layer. When the pressure changes to 50 μN (for example, the abrupt change occurs from 6.2 μN), the pressure after the change is 10 times that of the first abrupt change, and it can be considered that the probe just passes through the first film layer and comes into contact with the second film layer.

[0060] In this embodiment of the invention, the multiple of the second pressure mutation can be obtained by conducting multiple experiments and characterizations to obtain a multiple suitable for the relevant hardware and the device under test.

[0061] In S1003, when a second sudden change in pressure is detected, the probe immediately stops moving to avoid further penetrating the second membrane layer.

[0062] Experiments have verified that the method of this embodiment of the invention can achieve electrical connection between the probe and the electrode. At this time, the probe only penetrates the oxide layer and does not damage the electrode, or the probe only leaves a very small pit on the electrode surface, with minimal damage (which is usually acceptable) and hardly affects the performance of the Josephson junction.

[0063] Furthermore, in this embodiment of the invention, the probe moves at a slow, uniform speed. On the one hand, because the oxide layer itself is relatively thin, the probe speed cannot be too high; on the other hand, it also facilitates stopping the movement immediately upon reaching the target position.

[0064] For example, the probe moving speed is between 10 nm / s and 1 μm / s.

[0065] The electrical contact connection method proposed in this embodiment can make the probe just penetrate the oxide layer and make contact with the electrode as much as possible, and minimize the damage to the Josephson junction electrode.

[0066] Example 2

[0067] To test a Josephson junction, an electrical connection needs to be established with the junction's electrodes. The electrodes of a Josephson junction have an oxide layer on their surface. One feasible method to establish a good electrical connection is to pierce the oxide layer with a probe to make contact with the electrodes. However, ensuring a good electrical connection between the probe and the Josephson junction electrodes without damaging the junction is a crucial step.

[0068] Based on this, in this embodiment, a targeted electrical contact connection method is proposed. This method can make the probe just penetrate the oxide layer and make contact with the electrode as much as possible, and minimize the damage to the Josephson junction electrode.

[0069] In the embodiments of the present invention, please refer to Figure 5 The electrical contact connection method includes:

[0070] S1901, the first probe is brought into contact with the first film layer;

[0071] S1902, the second probe is moved toward the first film layer, and the resistance value between the first probe and the second probe is monitored in real time;

[0072] S1903, monitor the first sudden change in the resistance value and continue moving the second probe;

[0073] S1904, monitor the second sudden change in the resistance value, and stop the movement of the second probe when the second sudden change occurs, at which time the second probe is in contact with the second film layer.

[0074] In S1901, the first probe comes into contact with the first membrane layer, which can include contact with the surface of the first membrane layer, insertion into the first membrane layer, and just piercing through the first membrane layer.

[0075] In one specific implementation, the second film layer is the electrode of the Josephson junction electrode, and the first film layer is the oxide layer of the electrode.

[0076] For example, the electrode can be made of materials such as aluminum or niobium. In addition, other superconducting material layers can also be used in this invention.

[0077] The thickness of the first film layer can be between 0.1nm and 5nm, for example, 0.3nm, 0.5nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 1.7nm, 2nm, 2.3nm, 2.6nm, 2.9nm, 3nm, 3.1nm, 3.4nm, 3.6nm, 3.8nm, 4nm, 4.3nm, 4.5nm, 4.8nm, etc.

[0078] To reduce the impact of the external environment, in this embodiment of the invention, the process can be carried out in a cleanroom equipped with a vibration isolation platform and a soundproof enclosure.

[0079] In a better option, such as Figure 6As shown, the insertion position of the first probe is farther from the Josephson node than the insertion position of the second probe. For example, the insertion position of the first probe is 20-200 μm away from the node region. Therefore, the insertion position of the first probe is far from the node region, and its influence on the node can be ignored.

[0080] In addition, the first probe can be a relatively thick probe that can easily penetrate or pierce the oxide layer on the electrode surface.

[0081] In one embodiment, in S1901, the pressure on the first probe is monitored to make the first probe contact the first membrane layer.

[0082] For example, the method described in Example 1 can be used to make the first probe contact the first film layer.

[0083] In S1902, when the second probe is first activated, since it has not yet come into contact with the first film layer, the resistance between the first probe and the second probe tends to be infinite (above 10 MΩ).

[0084] As an example, in S1903, the first abrupt change is a decrease in resistance to 10KΩ to 10MΩ. When the first abrupt change occurs, it means that the second probe and the first film layer change from a non-contact state to a contact state.

[0085] The limiting factors for the first mutation include probe materials and membrane materials.

[0086] When the first mutation occurs, the second probe will continue to move, that is, continue to penetrate deeper into the first film layer. During this process, the resistance value usually shows a continuous decrease.

[0087] As the second probe penetrates deeper, when the resistance value undergoes a second abrupt change, it is assumed that the second probe has just passed through the first film layer and is in contact with the second film layer.

[0088] As an example, in S1904, the second abrupt change is that the resistance value becomes 10Ω to 1000Ω, for example, 40 to 150Ω.

[0089] In S1904, when a second sudden change in the resistance value is detected, the second probe immediately stops moving to avoid continuing to penetrate the second membrane layer.

[0090] Experiments have verified that the method of this embodiment of the invention can achieve electrical connection between the second probe and the electrode. At this time, the second probe only penetrates the oxide layer and does not damage the electrode, or the probe only leaves a very small pit on the electrode surface, with minimal damage and almost no impact on the performance of the Josephson junction.

[0091] Furthermore, in this embodiment of the invention, the second probe moves at a slow, uniform speed. On the one hand, since the oxide layer itself is relatively thin, the probe speed cannot be too high; on the other hand, it also facilitates stopping the movement immediately upon reaching the target position.

[0092] For example, the second probe moves at a speed between 10 nm / s and 1 μm / s.

[0093] The electrical contact connection method proposed in this embodiment can make the probe just penetrate the oxide layer and make contact with the electrode as much as possible, and minimize the damage to the Josephson junction electrode.

[0094] Example 3

[0095] To test a Josephson junction, an electrical connection needs to be established with the junction's electrodes. The electrodes of a Josephson junction have an oxide layer on their surface. One feasible method to establish a good electrical connection is to pierce the oxide layer with a probe to make contact with the electrodes. However, ensuring a good electrical connection between the probe and the Josephson junction electrodes without damaging the junction is a crucial step.

[0096] Embodiment 3 of the present invention provides an electrical contact connection system. Using this system, the probe can be precisely positioned at the interface between two film layers, such as the interface between the electrode and the oxide layer. Accordingly, with the aid of this system, the method of the present invention can be implemented more accurately.

[0097] Please refer to Figure 7 The electrical contact connection system includes:

[0098] Displacement adjustment component 21, with a first probe 11 and a second probe 12 disposed on the displacement adjustment component 21;

[0099] Resistance monitoring module 33, the first probe 11 and the second probe 12 are both connected to the resistance monitoring module 33; and

[0100] The chip displacement stage 7, the first probe 11 and the second probe 12 can move relative to the chip displacement stage 7 under the drive of the displacement adjustment component 21.

[0101] Furthermore, the resistance monitoring module 33 is used to monitor the detected resistance value in real time, and control the movement of the displacement adjustment component 21 when the resistance value changes abruptly.

[0102] Furthermore, it also includes a micro-force sensor 23. In order to make the method of the present invention more accurate in pressure detection, in one embodiment, the first probe 11 is disposed on the probe of the micro-force sensor 23. The first probe 11 and the probe of the micro-force sensor 23 can be rigidly connected, thereby making the force transmission more direct.

[0103] Furthermore, it also includes a processing module 331, which receives the pressure detected by the micro-force sensor 23 in real time and records at least the pressure value when the pressure changes abruptly. The processing module 331 also controls the movement of the displacement adjustment component 21 based on the pressure value when the pressure changes abruptly.

[0104] The processing module 331 is used to continuously monitor the pressure experienced by the first probe 11 as it moves, and to monitor the first sudden change in pressure and the second sudden change in pressure.

[0105] For example, when the processing module 331 detects the first sudden change in pressure, it immediately causes the displacement adjustment component 21 to stop moving the first probe 11, or it continues to cause the displacement adjustment component 21 to move the first probe 11, and can stop moving the first probe 11 at any time as needed; when the processing module 331 detects the second sudden change in pressure, it immediately causes the displacement adjustment component 21 to stop moving the first probe 11.

[0106] The processing module 331 can be integrated into the resistance monitoring module 33, that is, the processing module 331 can control the movement of the displacement adjustment component 21 according to the pressure signal and the resistance signal.

[0107] The first probe 11 and the second probe 12 are tungsten needles or tungsten alloy needles. The surfaces of the first probe 11 and the second probe 12 may be electroplated with a protective layer. The first probe 11 is thicker than the second probe 12.

[0108] For example, the first probe 11 has a handle diameter between 10-500 μm and a tip diameter between 0.5-15 μm, and the second probe 12 has a handle diameter between 5-50 μm and a tip diameter between 0.2-1 μm.

[0109] The first probe 11 is relatively thick, making it easy to pierce the oxide layer of the Josephson junction electrode. The second probe 12 is relatively thin, in order to minimize damage to the electrode, so that the effect on the junction is negligible.

[0110] The chip displacement stage 7 is mainly used to carry the device under test, such as a superconducting quantum chip with a Josephson junction.

[0111] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," or "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0112] The above are merely preferred embodiments of the present invention and do not constitute any limitation on the present invention. Any equivalent substitutions or modifications made by those skilled in the art to the technical solutions and content disclosed in the present invention without departing from the scope of the present invention shall be deemed to have remained within the protection scope of the present invention.

Claims

1. An electrical contact connection method, characterized in that, include: The first probe is inserted into the interface between the first film layer and the second film layer, and the first probe and the second film layer form an electrical contact. The second probe is moved toward the first film layer, and the resistance value between the first probe and the second probe is monitored in real time. Monitor the first sudden change in the resistance value and continue moving the second probe; The second abrupt change in the resistance value is monitored, and the movement of the second probe is stopped when the second abrupt change occurs, at which point the second probe comes into contact with the second film layer.

2. The electrical contact connection method according to claim 1, characterized in that, The second film is a superconductor of the Josephson junction electrode, and the first film is the oxide layer of the superconductor.

3. The electrical contact connection method according to claim 2, characterized in that, The insertion point of the first probe is farther from the Josephson node than the insertion point of the second probe.

4. The electrical contact connection method according to claim 1, characterized in that, By monitoring the pressure on the first probe, the first probe is made to penetrate the interface between the first and second membrane layers.

5. The electrical contact connection method according to claim 1, characterized in that, The first abrupt change was a decrease in resistance from over 10MΩ to 10KΩ~10MΩ.

6. The electrical contact connection method according to claim 3, characterized in that, The second sudden change was that the resistance value became 10. 1 ~10 2 Magnitude.

7. The electrical contact connection method according to claim 1, characterized in that, The thickness of the first film layer is between 0.1 nm and 5 nm.

8. An electrical contact connection system, characterized in that, The electrical contact connection method as described in any one of claims 1-7 is used to measure the resistance of a Josephson junction electrode, comprising: A displacement adjustment assembly, comprising a first probe and a second probe disposed on the displacement adjustment assembly; A resistance monitoring module, wherein both the first probe and the second probe are connected to the resistance monitoring module; and A chip displacement stage, wherein the first probe and the second probe are respectively able to move relative to the chip displacement stage under the drive of the displacement adjustment component; The resistance monitoring module is used to monitor the detected resistance value in real time and control the movement of the displacement adjustment component when the resistance value changes abruptly.

9. The electrical contact connection system according to claim 8, characterized in that, It also includes a micro-force sensor, which is disposed on the displacement adjustment assembly, and at least the first probe is disposed on the probe of the micro-force sensor.

10. The electrical contact connection system according to claim 8, characterized in that, The first probe and the second probe are tungsten needles or tungsten alloy needles. The surfaces of the first probe and the second probe may be electroplated with a protective layer. The first probe is thicker than the second probe.

11. The electrical contact connection system according to claim 10, characterized in that, The first probe has a handle diameter of 10-500 μm and a tip diameter of 0.5-15 μm, while the second probe has a handle diameter of 5-50 μm and a tip diameter of 0.2-1 μm.

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