A high-power magnetron spectrum improvement device, system and method

Abstract

The present invention discloses a high-power magnetron spectrum improvement device, system, and method, belonging to the field of microwave technology. The device comprises a waveguide, a unidirectional annular component, and a coupling component. The waveguide is provided with an electromagnetic wave input port at its left end and an output port at its right end, and the upper and lower sides of the waveguide are wide walls. The unidirectional annular component is located within the waveguide. The unidirectional annular component is used to change the magnetic field within the waveguide to enable unidirectional transmission of electromagnetic waves. The coupling component is used to couple a portion of the electromagnetic waves from the output port and inject them into the input port. The high-power magnetron spectrum improvement device, system, and method of the present invention can effectively improve the poor output signal spectrum characteristics of the magnetron in its free oscillation state through self-injection locking technology, greatly expanding the application potential of magnetrons. The present invention can effectively solve the problems of high cost and system complexity of existing injection locking technology.

Description

Technical Field

[0001] The present invention relates to the field of microwave technology, and in particular to a high-power magnetron spectrum improvement device, system and method. Background Art

[0002] In recent years, the application of microwave energy has gradually gained recognition and popularity. Compared to traditional fossil fuels such as coal and oil, microwave energy is cleaner and more efficient, showing great potential in applications such as food thawing, industrial drying, material synthesis, microwave plasma, and diamond deposition. At the same time, more industries are also placing new demands on low-cost, high-efficiency, high-power microwave sources.

[0003] As a widely used vacuum microwave device, the magnetron boasts high output power and low cost. Despite its small size and light weight, it can still achieve kilowatt-level output power, making it a crucial industrial microwave source. However, magnetrons also have drawbacks, including poor output spectrum stability and random output phase in their free-oscillation state. This poor output spectrum can prevent magnetrons from meeting EMC standards or lead to suboptimal application performance. For example, in high-end MPCVD systems, the magnetron is a core component. If its spectrum is unstable, some energy will be dissipated, resulting in suboptimal performance.

[0004] Injection locking is a technique commonly used to improve the output characteristics of magnetrons. Magnetron injection locking involves injecting a low-power signal with enhanced frequency and phase stability into the magnetron's internal resonant cavity through the magnetron's output antenna, using microwave devices such as a circulator. Within the resonant cavity, the low-power signal and the high-frequency field interact through complex standing waves, affecting the trajectory of electrons released from the magnetron's cathode, thereby altering the output signal characteristics of the magnetron in its free oscillation state. Through injection locking, the magnetron's output frequency in its free oscillation state is pulled to a frequency close to that of the low-power signal, and the output spectrum characteristics are more stable. Furthermore, injection locking can further stabilize the phase difference between the magnetron's output signal and the low-power signal. However, existing injection locking methods have the following problems: first, injection locking relies on an external solid-state source with a relatively pure signal as the injection source, which is expensive, significantly increasing the cost of the entire equipment; and second, existing injection locking methods utilize multiple structures, resulting in a relatively complex system. Summary of the Invention

[0005] In response to the above-mentioned problems in the prior art, the present invention provides a high-power magnetron spectrum improvement device, system, and method, which aims to solve the problems of high cost and complex system in existing injection locking technology. To achieve the above-mentioned objectives, the present invention provides the following technical solutions:

[0006] A magnetron spectrum improvement device comprises a waveguide, a unidirectional annular component and a coupling component; the waveguide is provided with an electromagnetic wave input port at its left end and an output port at its right end, and the upper and lower sides of the waveguide are wide walls; the unidirectional annular component is located inside the waveguide; the unidirectional annular component is used to change the magnetic field within the waveguide to enable unidirectional transmission of electromagnetic waves; the coupling component is used to couple a portion of the electromagnetic waves from the output port and inject them into the input port.

[0007] Furthermore, the coupling component includes a coupling hole, a coaxial line and an injection hole; and the coupling hole, coaxial line and injection hole are connected in sequence.

[0008] Furthermore, the coupling hole is arranged on the wide wall of the upper surface of the right end of the waveguide; and the injection hole is arranged on the wide wall of the upper surface of the front end of the waveguide.

[0009] Furthermore, the rear side of the waveguide is bent toward the inside of the waveguide.

[0010] Furthermore, flanges are provided at the left and right ends of the waveguide.

[0011] A high-power magnetron spectrum improvement system comprises a magnetron, a magnetron spectrum improvement device, a circulator and a load; the output end of the magnetron is connected to the magnetron spectrum improvement device; the magnetron spectrum improvement device is used to couple a portion of electromagnetic waves emitted by the magnetron to self-injection lock the magnetron; the output end of the magnetron spectrum improvement device is connected to the circulator; one end of the circulator is connected to the load.

[0012] A method for improving the spectrum of a high-power magnetron comprises the following steps:

[0013] S1: The magnetron emits electromagnetic waves, which are input into the magnetron spectrum improvement device through the electromagnetic wave input port;

[0014] S2: The electromagnetic wave in the magnetron spectrum improvement device is input from the electromagnetic wave input port, passes through the unidirectional ring component, and is output from the output port;

[0015] S3: The magnetron spectrum improvement device couples out a portion of the electromagnetic wave from the output port through the coupling hole, injects it into the input port, and then injects it into the magnetron from the input port to achieve magnetron self-injection locking.

[0016] The beneficial effects of the present invention are:

[0017] The present invention discloses a high-power magnetron spectrum improvement device, system, and method, belonging to the field of microwave technology. The device comprises a waveguide, a unidirectional annular component, and a coupling component. The waveguide is provided with an electromagnetic wave input port at its left end and an output port at its right end, and the upper and lower sides of the waveguide are wide walls. The unidirectional annular component is located within the waveguide. The unidirectional annular component is used to change the magnetic field within the waveguide to enable unidirectional transmission of electromagnetic waves. The coupling component is used to couple a portion of the electromagnetic waves from the output port and inject them into the input port. The high-power magnetron spectrum improvement device, system, and method of the present invention can effectively improve the poor output signal spectrum characteristics of the magnetron in its free oscillation state through self-injection locking technology, greatly expanding the application potential of magnetrons. The present invention can effectively solve the problems of high cost and system complexity of existing injection locking technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic structural diagram of the magnetron spectrum improvement device of the present invention;

[0019] Figure 2 It is a schematic diagram of the high-power magnetron spectrum improvement system of the present invention;

[0020] Figure 3 is an equivalent circuit diagram of the magnetron of the present invention;

[0021] Figure 4 This is the equivalent circuit diagram of the magnetron injection locking of the present invention;

[0022] Figure 5 This is a diagram showing the experimental results of the magnetron spectrum under free oscillation and self-injection states of the present invention;

[0023] Figure 6 This is a graph showing the relationship between phase difference and time under different injection ratios of the present invention;

[0024] Figure 7 This is a graph showing the relationship between phase difference and time at different frequency differences of the present invention;

[0025] Figure 8 This is a graph showing the relationship between phase difference and time under different initial phases of the present invention;

[0026] Figure 9 This is a graph showing the relationship between phase difference and time under different frequency shift coefficients of the present invention;

[0027] In the accompanying drawings: 1-waveguide, 2-unidirectional annular component, 3-input port, 4-output port, 5-coupling hole, 6-injection hole, 7-coaxial line, 8-flange. DETAILED DESCRIPTION

[0028] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments, but the present invention is not limited to the following embodiments.

[0029] Example 1:

[0030] See attached Figures 1 to 9 . A magnetron spectrum improvement device comprises a waveguide 1, a unidirectional annular component 2 and a coupling component; the waveguide 1 is provided with an electromagnetic wave input port 3 at the left end and an output port 4 at the right end, and the upper and lower sides of the waveguide 1 are wide walls; the unidirectional annular component 2 is located inside the waveguide 1; the unidirectional annular component 2 is used to change the magnetic field in the waveguide 1 so that the electromagnetic wave is transmitted in one direction; the coupling component is used to couple a part of the electromagnetic wave from the output port 4 and inject it into the input port 3. As can be seen from the above structure, improving frequency stability and improving the output spectrum quality play an important role in expanding the application range of magnetrons. The present invention designs a magnetron spectrum improvement device based on the theoretical analysis of magnetron free oscillation and magnetron injection locking.

[0031] Specifically, the theoretical analysis process of the magnetron free oscillation process is as follows:

[0032] In the prior art, the magnetron resonant cavity is equivalent to an RLC parallel resonant circuit. The magnetron equivalent circuit diagram is as follows: Figure 3 As shown, where R is the equivalent resistance, L is the equivalent inductance, C is the equivalent capacitance, g+jb is the equivalent magnetron power supply, g and b represent the conductance and susceptance in the resonant cavity respectively, G+jB is the load, and G and B represent the load conductance and susceptance respectively. The single-mode oscillation equation of the magnetron equivalent circuit is:

[0033]

[0034] in:

[0035] b=b0-gtanα(2)

[0036]

[0037] ω is the magnetron oscillation frequency, ω0 is the magnetron cavity resonance frequency, Q0 is the quality factor of the magnetron, Q ext is the external load quality factor, V dc and V RF Substituting formulas (1.2) and (1.3) into formula (1.1), and then separating the real and imaginary parts of formula (1.1), we can get the high-frequency voltage V output by the magnetron in the free oscillation state. RFO and frequency ω ′ They are:

[0038]

[0039]

[0040] in: From formula (1.4), we can know that the output high-frequency voltage V of the magnetron in the free oscillation state is RFO The power supply voltage V dc Since the DC stable power supply is generally formed by the AC power supply through rectification and voltage stabilization, it is inevitable that there are some AC components in the DC stable quantity, and it is difficult to achieve zero ripple, so the output power of the magnetron is unstable.

[0041] When an external signal is injected into the magnetron, the external injection signal can be regarded as the load of the magnetron. The equivalent circuit diagram of the magnetron injection locking is as follows: Figure 4 Specifically, the theoretical analysis process of magnetron injection locking is as follows:

[0042] Assuming that the current and voltage of the external injection signal are I1 and V1 respectively, and the frequency is ω1, the equivalent admittance of the magnetron load can be expressed as:

[0043] Y load =G+jB+2ρe -jθ (1.6)

[0044] in is the ratio of the injection signal to the high-frequency output signal amplitude of the magnetron, i.e., the injection ratio. θ = (ω - ω1)t is the phase difference between the magnetron output signal and the injection signal. At this time, the transient equation of the magnetron equivalent circuit can be expressed as:

[0045]

[0046] Separating the real and imaginary parts of formula (1.7), we can obtain:

[0047]

[0048]

[0049] make Substituting formulas (1.2) and (1.3) into formulas (1.8) and (1.9), we can obtain the relationship between the output high-frequency voltage and output frequency of the magnetron in the injection-locked state:

[0050]

[0051]

[0052] It can be seen from formula (1.10) that under the equivalent model state, the output voltage V of the injection-locked magnetron is RFNo longer affected by the power supply voltage V dc Therefore, the microwave source can achieve stable power output. As can be seen from formula (1.11), the output frequency of the injection-locked magnetron is no longer related to the magnetron electronic susceptance b0, but is related to the injection signal. Therefore, it can achieve stable frequency output and obtain a stable and pure spectrum.

[0053] Based on the above analysis, in order to simplify the analysis, all frequencies are normalized with ω0 as the reference, and ω0=1, that is, ω=ω / ω0, ω ′ =ω ′ / ω0, let μ=ρ / Q ext , At this time, formula (1.10) can be simplified to:

[0054]

[0055] In order to obtain the relationship between the phase difference between the magnetron output signal and the injection signal over time, the following transformation is made to formula (1.11):

[0056]

[0057] That is:

[0058]

[0059] Δω is the instantaneous angular frequency, i.e. dθ / dt. The differential equation for the phase difference changing with time is:

[0060]

[0061] When the phase of the magnetron output signal and the phase of the injection signal are constant, that is, after injection locking:

[0062]

[0063] The relationship that injection locking should satisfy is:

[0064]

[0065] This is the Adler lock condition. In order to analyze the change of the phase difference between the high-frequency output voltage of the magnetron and the external injection signal over time, the relationship between the phase difference and time is solved by integrating formula (1.16), which can be expressed as follows:

[0066]

[0067] Among them, μ ′ =μ / |cosα|, -θ iis the initial phase difference between the magnetron output signal and the external injection signal. It can be seen from formula (1.18) that the locking process of the phase difference between the magnetron output signal and the external injection signal is affected by the injection ratio coefficient μ ′ , the frequency difference σ between the magnetron free oscillation frequency and the external injection signal, the frequency shift coefficient α and the initial phase difference -θ i impact.

[0068] Based on the above, a magnetron spectrum improvement device is designed to achieve self-injection locking. Figure 1 As shown, it includes a waveguide 1, a unidirectional annular component 2, and a coupling component. The waveguide 1 is provided with an electromagnetic wave input port 3 at its left end and an output port 4 at its right end, and the upper and lower sides of the waveguide 1 are wide walls. Furthermore, a unidirectional annular component 2 is provided within the waveguide 1. The unidirectional annular component 2 is used to alter the magnetic field within the waveguide 1, allowing electromagnetic waves to propagate unidirectionally. For example, the unidirectional annular component 2 can be made of ferrite and configured in a cylindrical or other shape. The electromagnetic wave energy emitted by the magnetron can enter through the electromagnetic wave input port 3 at the left end of the waveguide 1 and be transmitted within the waveguide 1. Under the action of the unidirectional annular component 2, the electromagnetic wave is output from the output port 4 at the right end of the waveguide 1. Alternatively, the electromagnetic wave can be input from the front end of the waveguide 1 and output from the input port 3, thus achieving a unidirectional loop. By designing a coupling component on the magnetron spectrum improvement device, a portion of the electromagnetic wave from the output port 4 is coupled out and injected into the input port 3. For example, an injection hole can be opened on the wide wall of the upper surface of the front end of the waveguide 1, or a termination method can be used at the front end of the waveguide 1. The coupled electromagnetic wave is injected from the front end of the waveguide 1 and injected into the magnetron from the input port 3 through the unidirectional annular component 2. After being injected into the magnetron, the coupled electromagnetic wave generates a standing wave interaction inside the magnetron, thereby affecting the motion trajectory of electrons released by the cathode and thereby changing the output signal characteristics of the magnetron in the free oscillation state. The specific value of the coupled energy is related to the injection ratio and can be determined based on the output power of the magnetron and the required requirements. Generally, the larger the injection ratio, the better the injection effect. The present invention improves frequency stability and output spectrum quality through the magnetron spectrum improvement device. Moreover, by providing the coupling component on the magnetron spectrum improvement device, self-injection locking of the magnetron is achieved, eliminating the need for an additional solid-state source and saving costs.

[0069] Example 2:

[0070] See attached Figures 1 to 9. On the basis of embodiment one, the coupling component includes a coupling hole 5, a coaxial line 7 and an injection hole 6; the coupling hole 5, the coaxial line 7 and the injection hole 6 are connected in sequence. It can be seen from the above structure that the coupling component is used to couple a part of the electromagnetic waves of the output port 4 and inject it into the input port 3. The coupling component includes a coupling hole 5, a coaxial line 7 and an injection hole 6, and the coupling hole 5, the coaxial line 7 and the injection hole 6 are connected in sequence. Through the coupling hole 5, a part of the electromagnetic waves of the output port 4 can be coupled out, and then the coupled electromagnetic waves are transmitted to the injection hole 6 through the coaxial line 7, and after the action of the unidirectional annular component 2, they are injected into the interior of the magnetron from the input port 3. Due to the provision of the coupling component, self-injection locking of the magnetron is realized, and no additional solid-state source is required, which saves costs; and compared with the existing external injection locking method, the magnetron spectrum improvement device of the present invention requires less structure and is simpler to implement.

[0071] The coupling hole 5 is disposed on the wide wall of the upper right end surface of the waveguide 1; the injection hole 6 is disposed on the wide wall of the upper front end surface of the waveguide 1. As can be seen from the above structure, the coupling component is used to couple a portion of the electromagnetic waves from the output port 4. To facilitate electromagnetic wave coupling, the coupling hole 5 can be disposed on the wide wall of the upper right end surface of the waveguide 1. Existing theory indicates that the dominant mode in a rectangular waveguide is the TE10 mode. The wall current distribution of the TE10 indicates that when a certain amount of energy needs to be coupled out of a waveguide, the coupling hole 5 should be located at a position that maximizes the cutoff of the wall current. Therefore, the coupling hole 5 is disposed on the wide wall of the upper right end surface of the waveguide 1, avoiding the centerline of the wide wall of the waveguide 1. The coupled electromagnetic waves are transmitted via the coaxial line 7 to the injection hole 6, which is disposed on the wide wall of the upper front end surface of the waveguide 1. Both the coupling hole 5 and the injection hole 6 are disposed on the wide wall of the upper right end surface of the waveguide 1. The coupled electromagnetic waves can be directly transmitted via the coaxial line 7, eliminating the need for additional conversion structures. This ingenious design simplifies implementation.

[0072] The rear side of the waveguide 1 is bent toward the interior of the waveguide 1. As can be seen from the above structure, the waveguide 1 is provided with an electromagnetic wave input port 3 at the left end and an output port 4 at the right end, and the unidirectional ring component 2 is located inside the waveguide 1. Therefore, bending the rear side of the waveguide 1 toward the interior of the waveguide 1 can better achieve a unidirectional ring shape.

[0073] The waveguide 1 is provided with flanges 8 at both ends. As can be seen from the above structure, the flanges 8 are provided at both ends of the waveguide 1 to facilitate connection of the waveguide 1 with other devices.

[0074] Example 3:

[0075] See attached Figures 1 to 9. Based on the second embodiment, a high-power magnetron spectrum improvement system includes a magnetron, a magnetron spectrum improvement device, a circulator and a load; the output end of the magnetron is connected to the magnetron spectrum improvement device; the magnetron spectrum improvement device is used to couple a part of the electromagnetic waves emitted by the magnetron to self-injection lock the magnetron; the output end of the magnetron spectrum improvement device is connected to the circulator; one end of the circulator is connected to the load. It can be seen from the above structure that, if Figure 2 As shown, the high-power magnetron spectrum improvement system includes a magnetron, a magnetron spectrum improvement device, a circulator, and a load, which can be one or more loads. The magnetron outputs electromagnetic wave energy, which is input through input port 3 of the magnetron spectrum improvement device. Due to the provision of a unidirectional annular component 2, the electromagnetic wave is output through output port 4, passes through the circulator, and is absorbed by the load. The magnetron spectrum improvement device couples a portion of the electromagnetic wave energy through coupling hole 5, which is transmitted to injection hole 6 via coaxial line 7. Under the action of the unidirectional annular component 2, the electromagnetic wave energy is injected from input port 3 into the magnetron, causing self-injection locking of the magnetron. Finally, an electromagnetic wave with stable spectral characteristics is output from output port 4, which can be externally connected to a circulator and a load.

[0076] An experimental system was built based on the high-power magnetron spectrum improvement system of the present invention. First, the factors affecting the locking and the locking effect were verified:

[0077] a. Relationship between phase difference and time under different injection ratios:

[0078] Figure 6 The figure shows the relationship between the phase difference between the magnetron output signal and the injection signal over time at different injection ratios. It can be seen that the larger the injection ratio, the shorter the time required for injection locking, and as the injection ratio continues to increase, the final phase difference will approach a constant value.

[0079] b. Relationship between phase difference and time at different frequency differences:

[0080] Figure 7 The figure shows the time-dependent relationship between the phase difference between the magnetron's output signal and the injected signal, as the frequency difference between the magnetron's free oscillation and the injected signal varies. As the frequency difference changes, the phase difference eventually approaches a constant, though its value after reaching a constant varies accordingly. However, the time required for injection locking remains unchanged.

[0081] c. Relationship between phase difference and time at different initial phases:

[0082] Figure 8Figure 3 shows the relationship between the phase difference between the magnetron output signal and the external injection signal over time at different initial phases. Although the initial phase difference between the injection signal and the magnetron output signal is different, the phase difference between the two will eventually stabilize at a constant value.

[0083] d. Relationship between phase difference and time under different frequency shift coefficients:

[0084] Figure 9 The figure shows the time-varying relationship between the phase difference between the magnetron output signal and the external injection signal for different frequency-shifting coefficients. When α = 0, the magnetron can be considered to operate entirely in the π mode, and its output frequency is unaffected by current variations. When α ≠ 0, the magnetron's output frequency will vary with current variations. As can be seen from the figure, the frequency-shifting effect can shorten the injection locking time and change the locked phase difference.

[0085] Verify the improvement effect of the magnetron spectrum:

[0086] In the verification experiment, the 2M244-M1 magnetron produced by Panasonic was used. Figure 5 As shown in the figure, they are the spectrum of the magnetron in the free oscillation state and the spectrum of the magnetron in the self-injection state. Figure 5 It can be seen that the locking bandwidth of the magnetron during self-injection locking is about 91MHz, which is narrower than the bandwidth in the free oscillation state and has smaller phase noise.

[0087] Example 4:

[0088] See attached Figures 1 to 9 Based on the third embodiment, a method for improving the spectrum of a high-power magnetron includes the following steps:

[0089] 6. A method for improving the spectrum of a high-power magnetron, comprising the following steps:

[0090] S1: The magnetron emits electromagnetic waves, which are input into the magnetron spectrum improvement device through the electromagnetic wave input port 3;

[0091] S2: The electromagnetic wave in the magnetron spectrum improvement device is input from the electromagnetic wave input port 3, passes through the unidirectional ring component 2, and is output from the output port 4;

[0092] S3: The magnetron spectrum improvement device couples out a portion of the electromagnetic wave from the output port 4 through the coupling hole 5, injects it into the input port 3, and then injects it into the magnetron from the input port 3, thereby realizing self-injection locking of the magnetron.

[0093] As can be seen from the above structure, the following steps are specifically included when using the magnetron spectrum improvement and system to improve the magnetron spectrum:

[0094] S1: The magnetron emits electromagnetic waves, which are input into the magnetron spectrum improvement device through the electromagnetic wave input port 3;

[0095] S2: After the electromagnetic wave in the magnetron spectrum improvement device is input from the electromagnetic wave input port 3, it passes through the unidirectional ring component 2 and is output from the output port 4. The unidirectional ring component 2 can be a cylindrical ferrite.

[0096] S3: The magnetron spectrum improvement device couples out a portion of the electromagnetic waves from the output port 4 through the coupling hole 5, transmits it to the injection hole 6 through the coaxial line 7, and after the action of the unidirectional annular component 2, the coupled electromagnetic waves are injected into the magnetron from the input port 3, realizing the self-injection locking of the magnetron. The specific coupling injection ratio can be determined according to the output power of the magnetron and the required requirements.

[0097] The above description is only a preferred embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the contents of the present invention description and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A magnetron spectrum improvement device, characterized in that: The invention comprises a waveguide (1), a unidirectional annular component (2) and a coupling component; the waveguide (1) is provided with an electromagnetic wave input port (3) at the left end and an output port (4) at the right end, and the upper and lower sides of the waveguide (1) are wide walls; the unidirectional annular component (2) is located inside the waveguide (1); the unidirectional annular component (2) is used to change the magnetic field in the waveguide (1) so that the electromagnetic wave is transmitted in one direction; the coupling component is used to couple a part of the electromagnetic wave from the output port (4) and inject it into the input port (3); the coupling component comprises a coupling hole (5), a coaxial line (7) and an injection hole (6); the coupling hole (5), the coaxial line (7) and the injection hole (6) are connected in sequence; the coupling hole (5) is provided on the wide wall on the upper surface of the right end of the waveguide (1); and the injection hole (6) is provided on the wide wall on the upper surface of the front end of the waveguide (1).

2. The magnetron spectrum improvement device according to claim 1, characterized in that: The rear side of the waveguide (1) is bent toward the inside of the waveguide (1).

3. The magnetron spectrum improvement device according to claim 2, characterized in that: Flanges (8) are provided at the left and right ends of the waveguide (1).

4. A high-power magnetron spectrum improvement system, characterized by: The invention comprises a magnetron, a circulator and a load, and also comprises the magnetron spectrum improvement device according to any one of claims 1 to 3; the output end of the magnetron is connected to the magnetron spectrum improvement device; the magnetron spectrum improvement device is used to couple a part of the electromagnetic waves emitted by the magnetron to self-injection lock the magnetron; the output end of the magnetron spectrum improvement device is connected to the circulator; one end of the circulator is connected to the load.

5. A method for improving the spectrum of a high-power magnetron, using the magnetron spectrum improvement device according to any one of claims 1 to 3, characterized in that: The following steps are involved: S1: The magnetron emits electromagnetic waves, which are input into the magnetron spectrum improvement device through the electromagnetic wave input port (3); S2: The electromagnetic wave in the magnetron spectrum improvement device is input from the electromagnetic wave input port (3), passes through the one-way annular component (2), and is output from the output port (4); S3: The magnetron spectrum improvement device couples out a portion of the electromagnetic wave from the output port (4) through the coupling hole (5), injects it into the input port (3), and then injects it into the magnetron from the input port (3), thereby realizing the self-injection locking of the magnetron.

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