Method, device and equipment for monitoring concentration of HF-HCL mixed solution and storage medium
By measuring the change in wafer film thickness to monitor the concentration of HF-HCl mixed solution, the problem of the inability to monitor the concentration of HF-HCl mixed solution in the existing technology is solved, and effective monitoring of concentration and improvement of cleaning effect are achieved.
Patent Information
- Application Number
- CN202310392725.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-04-13
- Publication Date
- 2026-01-23
- Estimated Expiration
- 2043-04-13
AI Technical Summary
Existing technologies cannot effectively monitor the concentration of HF-HCl mixed solutions, resulting in poor wafer cleaning performance and increasing the risk of scrap.
By measuring the film thickness before and after the wafer enters and leaves the HF-HCl mixed solution, the reduction in film thickness is calculated, and concentration anomalies are identified using a preset range, thereby enabling the monitoring of the concentration of the HF-HCl mixed solution.
Timely detection of abnormal concentrations in the HF-HCl mixed solution reduces the risk of wafer scrap and improves cleaning effectiveness.
Smart Images
Figure CN116313927B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor technology, and in particular to a method, apparatus, device, and storage medium for monitoring the concentration of an HF-HCl mixed solution. Background Technology
[0002] In the semiconductor technology field, wafers need to be cleaned to remove surface contaminants such as particles, organic matter, and metals. Currently, the commonly used wet tank cleaning process is as follows: O3—HF (HF / DIW)—DIW—SC1 (NH3.H2O / H2O2 / DIW)—DIW—SC2 (HCl / HF / DIW)—DIW—O3—DIW—drying. Figure 1 As shown.
[0003] When cleaning wafers, a concentration meter is needed to monitor the concentration of the cleaning solution and determine if any abnormalities occur. Currently, HF (HF / DIW) and SC1 (NH3.H2O / H2O2 / DIW) can be monitored using a concentration meter. However, SC2 (HCl / HF / DIW), which is a mixture of HF, HCl, and DIW (deionized water), cannot be monitored using a concentration meter at present. Therefore, how to monitor the concentration of the HF-HCl mixture has become an urgent technical problem to be solved. Summary of the Invention
[0004] The embodiments of this disclosure provide a method, apparatus, device, and storage medium for monitoring the concentration of an HF-HCl mixed solution.
[0005] In a first aspect, embodiments of this disclosure provide a method for monitoring the concentration of an HF-HCl mixed solution, the method comprising:
[0006] The first film thickness before the wafer enters the HF-HCl mixing solution and the second film thickness after the wafer leaves the HF-HCl mixing solution are obtained.
[0007] Calculate the reduction in wafer thickness based on the first and second film thicknesses.
[0008] Based on the reduction in wafer film thickness, determine whether the concentration of the HF-HCl mixed solution has become abnormal.
[0009] In some possible implementations of the first aspect, obtaining a first film thickness before the wafer enters the HF-HCl mixing solution and a second film thickness after the wafer leaves the HF-HCl mixing solution includes:
[0010] Before the wafer enters the HF-HCl mixed solution, the first film thickness of the wafer is measured using a film thickness measuring chip.
[0011] After the wafer leaves the HF-HCl mixture, the second film thickness of the wafer is measured using a film thickness measuring device.
[0012] In some possible implementations of the first aspect, obtaining a first film thickness before the wafer enters the HF-HCl mixing solution and a second film thickness after the wafer leaves the HF-HCl mixing solution includes:
[0013] Before the wafer enters the HF-HCl mixed solution, the wafer is photographed along a preset shooting path to obtain multiple wafer images. Based on each wafer image, the film thickness of the shooting area corresponding to each wafer image is determined, and the average film thickness of each shooting area is calculated and used as the first film thickness.
[0014] After the wafer leaves the HF-HCl mixed solution, the wafer is photographed along a preset shooting path to obtain multiple wafer images. Based on each wafer image, the film thickness of the shooting area corresponding to each wafer image is determined, and the average film thickness of each shooting area is calculated and used as the second film thickness.
[0015] In some possible implementations of the first aspect, determining the film thickness of the imaged area corresponding to each wafer image based on each wafer image includes:
[0016] Divide the wafer image into multiple sub-wafer images of the same size;
[0017] Based on the images of each sub-wafer, determine the film thickness corresponding to each sub-wafer image;
[0018] Based on the film thickness corresponding to each sub-wafer image, the sub-wafer images are clustered to obtain multiple sets of sub-wafer images;
[0019] A closed curve is generated based on the center point of the sub-wafer image with the largest film thickness in each sub-wafer image set;
[0020] Calculate the average film thickness corresponding to the sub-wafer image within the closed curve, and use it as the film thickness of the image area corresponding to the wafer image.
[0021] In some possible implementations of the first aspect, determining the film thickness corresponding to each sub-wafer image based on each sub-wafer image includes:
[0022] The images of each sub-wafer are input into a pre-trained film thickness detection model to obtain the film thickness corresponding to each sub-wafer image;
[0023] The film thickness detection model is obtained by training a preset neural network using a sample set. The samples in the sample set use sub-wafer images as sample features and the film thickness corresponding to the sub-wafer images as sample labels.
[0024] In some possible implementations of the first aspect, the wafer includes each wafer in a wafer cleaning batch;
[0025] Alternatively, the wafer may include the first and last wafers in a wafer cleaning batch;
[0026] Alternatively, the wafer may include multiple wafers at specific positions within a wafer cleaning batch;
[0027] Alternatively, the wafer may include any one or more wafers in a wafer cleaning batch.
[0028] In some possible implementations of the first aspect, determining whether the concentration of the HF-HCl mixed solution is abnormal based on the reduction in wafer film thickness includes:
[0029] If the reduction in membrane thickness falls within the preset range, it is determined that the concentration of the HF-HCl mixed solution is not abnormal.
[0030] If the reduction in membrane thickness does not fall within the preset range, it is determined that the concentration of the HF-HCl mixed solution is abnormal.
[0031] Secondly, embodiments of this disclosure provide a concentration monitoring device for an HF-HCl mixed solution, the device comprising:
[0032] The acquisition module is used to acquire the first film thickness before the wafer enters the HF-HCl mixing solution, and the second film thickness after the wafer leaves the HF-HCl mixing solution;
[0033] The calculation module is used to calculate the reduction in film thickness of the wafer based on the first film thickness and the second film thickness of the wafer.
[0034] The determination module is used to determine whether the concentration of the HF-HCl mixed solution is abnormal based on the reduction value of the film thickness on the wafer.
[0035] Thirdly, embodiments of this disclosure provide an electronic device comprising: at least one processor; and a memory communicatively connected to the at least one processor; the memory storing instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to perform the method described above.
[0036] Fourthly, embodiments of this disclosure provide a non-transitory computer-readable storage medium storing computer instructions for causing a computer to perform the methods described above.
[0037] In the embodiments of this disclosure, the reduction in film thickness can be calculated based on the film thickness before and after the wafer is cleaned by the HF-HCl mixed solution. The concentration of the HF-HCl mixed solution can be effectively monitored based on the reduction in film thickness, thereby promptly detecting whether the concentration of the HF-HCl mixed solution is abnormal. When the concentration is abnormal, corresponding measures can be taken quickly, greatly reducing the risk of wafer scrapping and improving the wafer cleaning effect.
[0038] It should be understood that the description in the Summary of the Invention is not intended to limit the key or essential features of the embodiments of this disclosure, nor is it intended to restrict the scope of this disclosure. Other features of this disclosure will become readily apparent from the following description. Attached Figure Description
[0039] The above and other features, advantages, and aspects of the embodiments of this disclosure will become more apparent from the accompanying drawings and the following detailed description. The drawings are provided for a better understanding of the invention and are not intended to limit the scope of this disclosure. In the drawings, the same or similar reference numerals denote the same or similar elements, wherein:
[0040] Figure 1 A flowchart of a wet tank cleaning process provided by an embodiment of the present disclosure is shown;
[0041] Figure 2 A flowchart illustrating a method for monitoring the concentration of an HF-HCl mixed solution provided by an embodiment of this disclosure is shown.
[0042] Figure 3 A structural diagram of a concentration monitoring device for an HF-HCl mixed solution provided in an embodiment of this disclosure is shown.
[0043] Figure 4 A structural diagram of an exemplary electronic device capable of implementing embodiments of the present disclosure is shown. Detailed Implementation
[0044] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. Based on the embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.
[0045] Furthermore, the term "and / or" in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.
[0046] To address the problems in the background art, embodiments of this disclosure provide a method, apparatus, device, and storage medium for monitoring the concentration of an HF-HCl mixed solution. Specifically, the method involves acquiring a first film thickness before the wafer enters the HF-HCl mixed solution and a second film thickness after the wafer leaves the HF-HCl mixed solution; calculating the reduction in film thickness based on the first and second film thicknesses; and determining whether the concentration of the HF-HCl mixed solution is abnormal based on the reduction in film thickness.
[0047] In this way, the reduction in film thickness can be calculated based on the film thickness before and after the wafer is cleaned with the HF-HCl mixed solution. The concentration of the HF-HCl mixed solution can be effectively monitored based on the reduction in film thickness, thereby promptly detecting whether the concentration of the HF-HCl mixed solution is abnormal. When the concentration is abnormal, corresponding measures can be taken quickly, which greatly reduces the risk of wafer scrap and helps to improve the wafer cleaning effect.
[0048] The following detailed description, with reference to the accompanying drawings and specific embodiments, illustrates the concentration monitoring method, apparatus, equipment, and storage medium for HF-HCl mixed solutions provided in this disclosure.
[0049] Figure 2 A flowchart illustrating a method for monitoring the concentration of an HF-HCl mixed solution according to an embodiment of this disclosure is shown, as follows: Figure 2 As shown, the concentration monitoring method 200 may include the following steps:
[0050] S210, obtain the first film thickness before the wafer enters the HF-HCl mixed solution, and the second film thickness after the wafer leaves the HF-HCl mixed solution.
[0051] In some embodiments, the first film thickness of the wafer (the film thickness before cleaning with the HF-HCl mixture) can be measured using a film thickness measuring chip before the wafer enters the HF-HCl mixture solution.
[0052] Accordingly, after the wafer leaves the HF-HCl mixed solution, the second film thickness of the wafer (the film thickness after cleaning with the HF-HCl mixed solution) can be measured using a film thickness measuring chip.
[0053] In this way, the first film thickness before the wafer enters the HF-HCl mixture and the second film thickness after the wafer leaves the HF-HCl mixture can be quickly obtained using a film thickness measuring chip.
[0054] In other embodiments, before the wafer enters the HF-HCl mixed solution, the wafer can be photographed along a preset shooting path to obtain multiple wafer images. Based on each wafer image, the film thickness of the shooting area corresponding to each wafer image is determined, and the average film thickness of each shooting area is calculated, which is then used as the first film thickness.
[0055] For example, the preset shooting path can be a straight path from the edge of the wafer to the center of the wafer or from the center of the wafer to the edge of the wafer, and there is no limitation here.
[0056] The steps for determining the film thickness of the image area corresponding to each wafer image may include:
[0057] Divide the wafer image into multiple sub-wafer images of the same size.
[0058] For example, dividing a wafer image into multiple rectangular or hexagonal images of the same size.
[0059] Based on the images of each sub-wafer, determine the film thickness corresponding to each sub-wafer image.
[0060] For example, images of each sub-wafer can be input into a pre-trained film thickness detection model, which will then process the images to quickly obtain the film thickness corresponding to each sub-wafer image.
[0061] The film thickness detection model is obtained by training a preset neural network (such as a convolutional neural network, a recurrent neural network, a long short-term memory neural network, etc.) using a sample set. The samples in the sample set use sub-wafer images as sample features and the film thickness corresponding to the sub-wafer images as sample labels. The sub-wafer images can be any sub-wafer images, and there are no restrictions here.
[0062] The sub-wafer images are clustered based on the film thickness corresponding to each sub-wafer image, resulting in multiple sub-wafer image sets. The clustering algorithm can be K-Means, community detection, DBSCAN, Gaussian mixture algorithm, KNN, or AGNES; no specific algorithm is required.
[0063] Based on the center point of the sub-wafer image with the largest film thickness in each sub-wafer image set, a closed curve is generated. For example, by connecting each center point in sequence, a closed curve is generated. Then, the average film thickness corresponding to the sub-wafer image within the closed curve is calculated and used as the film thickness of the shooting area corresponding to the wafer image, which greatly improves the accuracy.
[0064] Alternatively, a closed curve can be generated based on the center point of the sub-wafer image with the smallest film thickness in each set of sub-wafer images. Then, the average film thickness of the sub-wafer images within the closed curve can be calculated and used as the film thickness of the shooting area corresponding to the wafer image, which greatly improves the accuracy.
[0065] Alternatively, the average film thickness corresponding to each sub-wafer image in the set of sub-wafer images can be calculated, and the median of the average values can be taken as the film thickness of the image area corresponding to the wafer image, which greatly improves the accuracy.
[0066] Accordingly, after the wafer leaves the HF-HCl mixed solution, it can be photographed along a preset shooting path to obtain multiple wafer images. Based on each wafer image, the film thickness of the shooting area corresponding to each wafer image is determined, and the average film thickness of each shooting area is calculated, which is then used as the second film thickness.
[0067] In this way, by processing the wafer image, the first film thickness before the wafer enters the HF-HCl mixing solution and the second film thickness after the wafer leaves the HF-HCl mixing solution can be quickly obtained.
[0068] S220, calculate the reduction in wafer thickness based on the first and second film thicknesses.
[0069] Optionally, the second film thickness can be subtracted from the first film thickness to obtain the difference, and the difference can be used as the reduction value of the film thickness of the wafer.
[0070] Alternatively, the second film thickness can be subtracted from the first film thickness to obtain the difference, and the absolute value of the difference can be used as the reduction in film thickness of the wafer.
[0071] S230, based on the reduction in wafer film thickness, determine whether the concentration of the HF-HCl mixed solution is abnormal.
[0072] Specifically, it can be determined whether the reduction in membrane thickness falls within a preset range. If the reduction in membrane thickness falls within the preset range, it is determined that the concentration of the HF-HCl mixed solution is not abnormal, that is, the concentration is normal. If the reduction in membrane thickness does not fall within the preset range, it is determined that the concentration of the HF-HCl mixed solution is abnormal, that is, the concentration is too low or too high. At this time, an alarm is triggered, the machine is held, and further processing is required.
[0073] For example, if the decrease in membrane thickness is less than the minimum value of a preset range, the concentration is determined to be too low; if the decrease in membrane thickness is greater than the maximum value of a preset range, the concentration is determined to be too high.
[0074] In addition, the relationship between the reduction in film thickness of the wafer and the concentration of the HF-HCl mixed solution can be found in the table. The concentration of the HF-HCl mixed solution corresponding to the reduction in film thickness of the wafer can be obtained from the table. Based on the found concentration of the HF-HCl mixed solution, it can be determined whether the concentration of the HF-HCl mixed solution is abnormal.
[0075] Understandably, this relationship table can be generated based on multiple experiments or set by the user based on experience; no restrictions are imposed here.
[0076] In the embodiments of this disclosure, the reduction in film thickness can be calculated based on the film thickness before and after the wafer is cleaned by the HF-HCl mixed solution. The concentration of the HF-HCl mixed solution can be effectively monitored based on the reduction in film thickness, thereby promptly detecting whether the concentration of the HF-HCl mixed solution is abnormal. When the concentration is abnormal, corresponding measures can be taken quickly, greatly reducing the risk of wafer scrapping and improving the wafer cleaning effect.
[0077] It is worth noting that the aforementioned wafers may include each wafer in a wafer cleaning batch;
[0078] Alternatively, the aforementioned wafer may include the first wafer and the last wafer in a wafer cleaning batch;
[0079] Alternatively, the aforementioned wafers may include multiple wafers at specified positions in a wafer cleaning batch;
[0080] Alternatively, the aforementioned wafers may include any one or more wafers from a wafer cleaning batch.
[0081] The concentration monitoring method provided in this disclosure will be described in detail below with reference to a specific embodiment:
[0082] (1) The first film thickness before the wafer enters the HF-HCl mixed solution and the second film thickness after leaving the HF-HCl mixed solution are measured by film thickness measuring sheet.
[0083] (2) Calculate the reduction in film thickness of the wafer based on the first film thickness and the second film thickness of the wafer.
[0084] (3) Input the membrane thickness reduction value into the statistical process control (SPC) system.
[0085] (4) The SPC system determines whether the reduction in membrane thickness falls within the preset range. If the reduction in membrane thickness falls within the preset range, it is determined that the concentration of the HF-HCl mixed solution is not abnormal and no action is taken. If the reduction in membrane thickness does not fall within the preset range, it is determined that the concentration of the HF-HCl mixed solution is abnormal. At this time, an alarm is triggered, and the Manufacturing Execution System (MES) is notified to hold the machine and wait for further processing.
[0086] It is worth noting that the wafers measured above are the first and last wafers in the wafer cleaning batch, that is, the first and last runs of each shift.
[0087] It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that this disclosure is not limited to the described order of actions, because according to this disclosure, some steps can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are all optional embodiments, and the actions and modules involved are not necessarily essential to this disclosure.
[0088] The above is an introduction to the method embodiments. The following describes the solution described in this disclosure further through device embodiments.
[0089] Figure 3 A structural diagram of a concentration monitoring device for an HF-HCl mixed solution provided in an embodiment of this disclosure is shown, as follows: Figure 3 As shown, the concentration monitoring device 300 may include:
[0090] The acquisition module 310 is used to acquire the first film thickness before the wafer enters the HF-HCl mixing solution, and the second film thickness after the wafer leaves the HF-HCl mixing solution.
[0091] The calculation module 320 is used to calculate the reduction in film thickness of the wafer based on the first film thickness and the second film thickness of the wafer.
[0092] The determination module 330 is used to determine whether the concentration of the HF-HCl mixed solution is abnormal based on the reduction value of the film thickness of the wafer.
[0093] In some embodiments, the acquisition module 310 is specifically used for:
[0094] Before the wafer enters the HF-HCl mixed solution, the first film thickness of the wafer is measured using a film thickness measuring chip.
[0095] After the wafer leaves the HF-HCl mixture, the second film thickness of the wafer is measured using a film thickness measuring device.
[0096] In some embodiments, the acquisition module 310 is specifically used for:
[0097] Before the wafer enters the HF-HCl mixed solution, the wafer is photographed along a preset shooting path to obtain multiple wafer images. Based on each wafer image, the film thickness of the shooting area corresponding to each wafer image is determined, and the average film thickness of each shooting area is calculated and used as the first film thickness.
[0098] After the wafer leaves the HF-HCl mixed solution, the wafer is photographed along a preset shooting path to obtain multiple wafer images. Based on each wafer image, the film thickness of the shooting area corresponding to each wafer image is determined, and the average film thickness of each shooting area is calculated and used as the second film thickness.
[0099] In some embodiments, the acquisition module 310 is specifically used for:
[0100] Divide the wafer image into multiple sub-wafer images of the same size;
[0101] Based on the images of each sub-wafer, determine the film thickness corresponding to each sub-wafer image;
[0102] Based on the film thickness corresponding to each sub-wafer image, the sub-wafer images are clustered to obtain multiple sets of sub-wafer images;
[0103] A closed curve is generated based on the center point of the sub-wafer image with the largest film thickness in each sub-wafer image set;
[0104] Calculate the average film thickness corresponding to the sub-wafer image within the closed curve, and use it as the film thickness of the image area corresponding to the wafer image.
[0105] In some embodiments, the acquisition module 310 is specifically used for:
[0106] The images of each sub-wafer are input into a pre-trained film thickness detection model to obtain the film thickness corresponding to each sub-wafer image;
[0107] The film thickness detection model is obtained by training a preset neural network using a sample set. The samples in the sample set use sub-wafer images as sample features and the film thickness corresponding to the sub-wafer images as sample labels.
[0108] In some embodiments, the wafer includes each wafer in a wafer cleaning batch;
[0109] Alternatively, the wafer may include the first and last wafers in a wafer cleaning batch;
[0110] Alternatively, the wafer may include multiple wafers at specific positions within a wafer cleaning batch;
[0111] Alternatively, the wafer may include any one or more wafers in a wafer cleaning batch.
[0112] In some embodiments, the determining module 330 is specifically used for:
[0113] If the reduction in membrane thickness falls within the preset range, it is determined that the concentration of the HF-HCl mixed solution is not abnormal.
[0114] If the reduction in membrane thickness does not fall within the preset range, it is determined that the concentration of the HF-HCl mixed solution is abnormal.
[0115] Understandable, Figure 3 Each module / unit in the concentration monitoring device 300 shown has the ability to implement Figure 1 The functions of each step in the concentration monitoring method 200 shown, and the corresponding technical effects they achieve, will not be elaborated here for the sake of brevity.
[0116] Figure 4 A structural diagram of an exemplary electronic device capable of implementing embodiments of the present disclosure is shown. Electronic device 400 is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. Electronic device 400 may also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the present disclosure described and / or claimed herein.
[0117] like Figure 4 As shown, the electronic device 400 may include a computing unit 401, which can perform various appropriate actions and processes according to a computer program stored in a read-only memory (ROM) 402 or a computer program loaded from a storage unit 408 into a random access memory (RAM) 403. The RAM 403 may also store various programs and data required for the operation of the electronic device 400. The computing unit 401, ROM 402, and RAM 403 are interconnected via a bus 404. An input / output (I / O) interface 405 is also connected to the bus 404.
[0118] Multiple components in electronic device 400 are connected to I / O interface 405, including: input unit 406, such as keyboard, mouse, etc.; output unit 407, such as various types of displays, speakers, etc.; storage unit 408, such as disk, optical disk, etc.; and communication unit 409, such as network card, modem, wireless transceiver, etc. Communication unit 409 allows electronic device 400 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.
[0119] The computing unit 401 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 401 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 401 performs the various methods and processes described above, such as method 200. For example, in some embodiments, method 200 may be implemented as a computer program product, including a computer program tangibly contained in a computer-readable medium, such as storage unit 408. In some embodiments, part or all of the computer program may be loaded and / or installed on device 400 via ROM 402 and / or communication unit 409. When the computer program is loaded into RAM 403 and executed by the computing unit 401, one or more steps of method 200 described above may be performed. Alternatively, in other embodiments, the computing unit 401 may be configured to perform method 200 by any other suitable means (e.g., by means of firmware).
[0120] The various embodiments described above can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), system-on-a-chip (SoCs), payload programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include implementations in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor, capable of receiving data and instructions from a storage system, at least one input device, and at least one output device, and transmitting data and instructions to the storage system, the at least one input device, and the at least one output device.
[0121] The program code used to implement the methods of this disclosure may be written in any combination of one or more programming languages. This program code may be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing apparatus, such that when executed by the processor or controller, the program code causes the functions / operations specified in the flowcharts and / or block diagrams to be implemented. The program code may be executed entirely on a machine, partially on a machine, as a standalone software package partially on a machine and partially on a remote machine, or entirely on a remote machine or server.
[0122] In the context of this disclosure, a computer-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A computer-readable medium can be a computer-readable signal medium or a computer-readable storage medium. A computer-readable medium can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of computer-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.
[0123] It should be noted that this disclosure also provides a non-transitory computer-readable storage medium storing computer instructions, wherein the computer instructions are used to cause a computer to execute method 200 and achieve the corresponding technical effects achieved by the embodiments of this disclosure in executing the method. For the sake of brevity, further details are omitted here.
[0124] In addition, this disclosure also provides a computer program product including a computer program that implements method 200 when executed by a processor.
[0125] To provide interaction with a user, the embodiments described above can be implemented on a computer having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the computer. Other types of devices can also be used to provide interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).
[0126] The embodiments described above can be implemented in computing systems that include backend components (e.g., as a data server), or computing systems that include middleware components (e.g., an application server), or computing systems that include frontend components (e.g., a user computer with a graphical user interface or web browser through which a user can interact with the implementations of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication (e.g., a communication network) of any form or medium. Examples of communication networks include local area networks (LANs), wide area networks (WANs), and the Internet.
[0127] Computer systems can include clients and servers. Clients and servers are generally located far apart and typically interact via communication networks. Client-server relationships are created by computer programs running on the respective computers and having a client-server relationship with each other. Servers can be cloud servers, servers in distributed systems, or servers incorporating blockchain technology.
[0128] It should be understood that the various forms of processes shown above can be used to rearrange, add, or delete steps. For example, the steps described in this disclosure can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution disclosed in this disclosure can be achieved, and this is not limited herein.
[0129] The specific embodiments described above do not constitute a limitation on the scope of protection of this disclosure. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this disclosure should be included within the scope of protection of this disclosure.
Claims
1. A method for monitoring the concentration of an HF-HCl mixed solution, characterized in that, The method includes: The first film thickness before the wafer enters the HF-HCl mixed solution, and the second film thickness after the wafer leaves the HF-HCl mixed solution are obtained; Calculate the reduction in film thickness of the wafer based on the first film thickness and the second film thickness of the wafer; Based on the reduction in film thickness of the wafer, determine whether the concentration of the HF-HCl mixed solution is abnormal; The acquisition of the first film thickness before the wafer enters the HF-HCl mixture and the second film thickness after the wafer leaves the HF-HCl mixture includes: Before the wafer enters the HF-HCl mixed solution, the wafer is photographed along a preset shooting path to obtain multiple wafer images. Based on each wafer image, the film thickness of the shooting area corresponding to each wafer image is determined, and the average film thickness of each shooting area is calculated and used as the first film thickness. After the wafer leaves the HF-HCl mixed solution, the wafer is photographed along the preset shooting path to obtain multiple wafer images. Based on each wafer image, the film thickness of the shooting area corresponding to each wafer image is determined, and the average film thickness of each shooting area is calculated and used as the second film thickness. The step of determining the film thickness of the imaging area corresponding to each wafer image based on each wafer image includes: The wafer image is divided into multiple sub-wafer images of the same size; Based on the images of each sub-wafer, determine the film thickness corresponding to each sub-wafer image; Based on the film thickness corresponding to each sub-wafer image, the sub-wafer images are clustered to obtain multiple sets of sub-wafer images; A closed curve is generated based on the center point of the sub-wafer image with the largest film thickness in each sub-wafer image set; the average film thickness of the sub-wafer images within the closed curve is calculated and used as the film thickness of the shooting area corresponding to the wafer image; or, a closed curve is generated based on the center point of the sub-wafer image with the smallest film thickness in each sub-wafer image set, the average film thickness of the sub-wafer images within the closed curve is calculated and used as the film thickness of the shooting area corresponding to the wafer image.
2. The method according to claim 1, characterized in that, The step of determining the film thickness corresponding to each sub-wafer image based on each sub-wafer image includes: The images of each sub-wafer are input into a pre-trained film thickness detection model to obtain the film thickness corresponding to each sub-wafer image; The film thickness detection model is obtained by training a preset neural network using a sample set. The samples in the sample set use sub-wafer images as sample features and the film thickness corresponding to the sub-wafer images as sample labels.
3. The method according to claim 1, characterized in that, The wafers include each wafer in a wafer cleaning batch; Alternatively, the wafer may include the first wafer and the last wafer in the wafer cleaning batch; Alternatively, the wafer may comprise a plurality of wafers at designated positions within the wafer cleaning batch; Alternatively, the wafer may include any one or more wafers from the wafer cleaning batch.
4. The method according to claim 1, characterized in that, The step of determining whether the concentration of the HF-HCl mixed solution is abnormal based on the reduction in film thickness of the wafer includes: If the reduction in membrane thickness falls within a preset range, then the concentration of the HF-HCl mixed solution is determined to be normal. If the reduction in membrane thickness does not fall within the preset range, then the concentration of the HF-HCl mixed solution is determined to be abnormal.
5. A concentration monitoring device for an HF-HCl mixed solution, characterized in that, The device includes: The acquisition module is used to acquire the first film thickness of the wafer before it enters the HF-HCl mixed solution, and the second film thickness of the wafer after it leaves the HF-HCl mixed solution; The calculation module is used to calculate the reduction in film thickness of the wafer based on the first film thickness and the second film thickness of the wafer; The determination module is used to determine whether the concentration of the HF-HCl mixed solution is abnormal based on the reduction value of the film thickness of the wafer; The acquisition module is specifically used for: Before the wafer enters the HF-HCl mixed solution, the wafer is photographed along a preset shooting path to obtain multiple wafer images. Based on each wafer image, the film thickness of the shooting area corresponding to each wafer image is determined, and the average film thickness of each shooting area is calculated and used as the first film thickness. After the wafer leaves the HF-HCl mixed solution, the wafer is photographed along the preset shooting path to obtain multiple wafer images. Based on each wafer image, the film thickness of the shooting area corresponding to each wafer image is determined, and the average film thickness of each shooting area is calculated and used as the second film thickness. The step of determining the film thickness of the imaging area corresponding to each wafer image based on each wafer image includes: The wafer image is divided into multiple sub-wafer images of the same size; Based on the images of each sub-wafer, determine the film thickness corresponding to each sub-wafer image; Based on the film thickness corresponding to each sub-wafer image, the sub-wafer images are clustered to obtain multiple sets of sub-wafer images; A closed curve is generated based on the center point of the sub-wafer image with the largest film thickness in each sub-wafer image set; the average film thickness of the sub-wafer images within the closed curve is calculated and used as the film thickness of the shooting area corresponding to the wafer image; or, a closed curve is generated based on the center point of the sub-wafer image with the smallest film thickness in each sub-wafer image set, the average film thickness of the sub-wafer images within the closed curve is calculated and used as the film thickness of the shooting area corresponding to the wafer image.
6. An electronic device, characterized in that, The electronic device includes: At least one processor; and a memory communicatively connected to the at least one processor; wherein, The memory stores instructions that can be executed by the at least one processor to enable the at least one processor to perform the method of any one of claims 1-4.
7. A non-transitory computer-readable storage medium storing computer instructions, characterized in that, The computer instructions are used to cause the computer to perform the method according to any one of claims 1-4.
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