Wafer heating device and wafer processing apparatus

Abstract

The application provides a wafer heating device for a wafer processing device, the wafer processing device comprising a reaction cavity, the reaction cavity being provided with a substrate for carrying a wafer, the wafer heating device comprising: at least one induction coil, the induction coil comprising multiple turns; at least one induction heating plate, the induction coil being used to inductively heat the induction heating plate, the wafer heating device being used to provide heat to the wafer through the induction heating plate, the multiple turns of the induction coil comprising a first area directly opposite the induction heating plate; and at least one adjusting block, the adjusting block being detachably sleeved on the induction coil, the adjusting block being configured as a ferromagnetic material or a conductive material and being located in the first area, so as to locally adjust the magnetic field distribution of the induction coil at the induction heating plate. The application further provides a wafer processing device. The application can ensure the uniform temperature of the wafer surface without changing the arrangement of the induction coil.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and in particular to a wafer heating device and wafer processing equipment. Background Technology

[0002] In wafer fabrication processes, it is typically necessary to heat the wafer to a set temperature on a substrate. Currently, most methods use induction coils (usually multi-turn) to heat the substrate through electromagnetic induction. The substrate then transfers the generated heat away through thermal conduction, thus heating the wafer.

[0003] The temperature of a wafer directly determines the speed and quality of wafer processing. Even assuming the wafer reaches the required temperature, temperature uniformity (also known as temperature consistency) is crucial for ensuring the optimal processing results. Poor temperature uniformity leads to more surface defects, significantly reducing the yield rate and consequently resulting in lower quality semiconductors or chips manufactured from that wafer.

[0004] The uneven distribution of the magnetic field strength generated by the induction coil on the plane of the substrate will lead to inconsistent heating effects on different areas of the wafer. To ensure uniform heating of the wafer by the induction coil, two methods are commonly used: 1) Heating different areas of the wafer separately using multiple sets of induction coils with different power. However, this method is costly and has a complex control process. 2) Designing corresponding position parameters for each turn of the induction coil. This method requires high precision in the installation position of the induction coil, has a long installation time, and is less efficient. Furthermore, due to calculation / simulation errors during the design process, the actual heating effect on the wafer may differ from the simulated heating effect during coil design.

[0005] Furthermore, due to limitations in substrate processing technology, differences in thermal conductivity are unavoidable across different regions of the substrate, which also leads to inconsistent heating effects across different areas of the wafer. Moreover, these differences in substrate thermal conductivity can usually only be determined after wafer processing is complete, by observing defects on the wafer surface. At this point, the induction coils are already installed and fixed, making it inconvenient to adjust the heating effect across different areas of the wafer by readjusting the coil positions. Summary of the Invention

[0006] The purpose of this invention is to provide a wafer heating device and wafer processing equipment that can accurately control the heating temperature of each area of ​​the wafer even when the induction heating plate has its own defects and the position of the induction coil cannot be adjusted, thus ensuring the consistency of the wafer surface temperature and improving the yield of wafer processing.

[0007] To achieve the above objectives, the present invention provides a wafer heating device for use in wafer processing equipment. The wafer processing equipment includes a reaction chamber, and a substrate for supporting wafers is disposed within the reaction chamber. The wafer heating device comprises:

[0008] At least one induction coil, the induction coil comprising multiple turns;

[0009] At least one induction heating plate, the induction coil inductively heats the induction heating plate, the wafer heating device provides heat to the wafer through the induction heating plate, and the multi-turn induction coil includes a first region facing the induction heating plate;

[0010] At least one adjusting block is detachably mounted on the induction coil. The adjusting block is configured as a ferromagnetic or conductive material and is located in the first region to locally adjust the magnetic field distribution of the induction coil at the induction heating plate.

[0011] Optionally, the adjusting block includes a first adjusting block having a U-shaped groove structure, the first adjusting block being sleeved on the induction coil with the opening of the U-shaped groove facing away from the induction heating plate; the first adjusting block reduces the magnetic field strength at the point where the induction heating plate and the first adjusting block are directly opposite each other.

[0012] Optionally, the adjusting block includes a second adjusting block, which includes at least a first component and a second component. The first component and the second component cooperate to form a hollow columnar structure that can surround the induction coil. The second adjusting block is sleeved on the induction coil in a surrounding manner. The second adjusting block reduces the magnetic field strength at the point where the induction heating plate is directly opposite the second adjusting block.

[0013] Optionally, the adjusting block includes a third adjusting block, which has a U-shaped groove structure and is fitted onto the induction coil with the opening of the U-shaped groove facing the induction heating plate; the third adjusting block reduces the magnetic field strength at the point where the induction heating plate and the third adjusting block are directly opposite each other.

[0014] Optionally, when providing medium- to high-frequency AC power to the induction coil, the regulating block is made of a thermally and electrically conductive material; when providing low-frequency AC power to the induction coil, the regulating block is made of a thermally and magnetically conductive material.

[0015] Optionally, the thermally and electrically conductive material includes one or more of copper and stainless steel; the thermally and magnetically conductive material includes nickel metal or an iron-nickel alloy.

[0016] Optionally, the induction heating plate is configured as the substrate, the substrate being rotatably disposed relative to the induction coil to change the overall heat distribution of the substrate through the local adjustment; the induction coil is disposed within the reaction chamber and below the substrate.

[0017] Optionally, the adjusting block includes an insulating layer at least on a portion of its surface to form a non-electrical connection between the adjusting block and the induction coil; the insulating layer is made of any one or more of AlN ceramic, Al2O3 ceramic, SiC ceramic, and SiN ceramic.

[0018] Optionally, the wafer heating device further includes a rotating shaft; the rotating shaft drives the substrate to rotate around the central axis of the substrate.

[0019] The present invention also provides a wafer processing apparatus, comprising:

[0020] The reaction chamber is equipped with a wafer heating device as described in this invention.

[0021] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0022] 1) The wafer heating device and wafer processing equipment of the present invention do not require changes to the existing arrangement of the induction coil. By mounting one or more adjustment blocks on the induction coil, the magnetic field strength radiated by the induction coil to the corresponding induction heating plate at the installation position of the adjustment block is adjusted, thereby adjusting the heat generated in the corresponding area of ​​the induction heating plate. Combined with the relative rotation of the induction heating plate, the above-mentioned point adjustment effect can be reflected in the surface area of ​​the induction heating plate, thereby adjusting the overheated area of ​​the induction heating plate. That is, the temperature distribution of the induction heating plate can be adjusted by deploying one or more simple adjustment blocks. In practical use, the above-mentioned adjustment blocks can be selectively assembled based on the heat distribution of the induction heating plate or the wafer to achieve temperature adjustment of the induction heating plate or the wafer, providing a solution for achieving uniform temperature adjustment of the wafer or the induction heating plate, thereby improving the yield of wafer processing.

[0023] 2) This invention only requires arranging the adjustment blocks based on the actual temperature difference in each region of the wafer, making the adjustment method simple and offering a high degree of freedom. Furthermore, since there is no need to adjust the position of each turn of the induction coil, the tolerance for errors in coil design and installation is increased, and the assembly difficulty is reduced.

[0024] 3) Uneven density distribution of the induction heating plate itself leads to uneven thermal conductivity distribution, resulting in inconsistent heating temperatures across different areas of the wafer. This invention effectively mitigates the adverse effects of uneven induction heating plate density by reducing local heating efficiency. Since there is no need to replace the induction heating plate, it not only improves the manufacturing efficiency of wafer processing equipment but also significantly reduces its manufacturing cost. Attached Figure Description

[0025] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings in the following description are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0026] Figure 1 This is a schematic diagram of a wafer processing device;

[0027] Figure 2 This is a perspective view of the wafer processing equipment in Embodiment 1 of the present invention;

[0028] Figure 3 This is a schematic diagram of the first adjusting block in Embodiment 1 of the present invention;

[0029] Figure 4 This is a schematic diagram of the first adjusting block being sleeved on the induction coil in Embodiment 1 of the present invention;

[0030] Figure 5 This is a schematic diagram of the magnetic field distribution between the substrate and the induction coil when the first adjustment block is not provided on the induction coil in Embodiment 1 of the present invention.

[0031] Figure 5A This is a graph showing the magnetic field characteristics above the first position before the first adjustment block is installed, according to Embodiment 1 of the present invention.

[0032] Figure 6 This is a schematic diagram of the magnetic field distribution between the substrate and the induction coil after a first adjustment block is provided on the induction coil in Embodiment 1 of the present invention.

[0033] Figure 6A This is a graph showing the magnetic field characteristics above the first position after the first adjustment block is installed, according to Embodiment 1 of the present invention.

[0034] Figure 7 This is a schematic diagram of the second adjusting block in Embodiment 2 of the present invention;

[0035] Figure 8 This is a schematic diagram of the magnetic field distribution between the substrate and the induction coil after a second adjustment block is provided on the induction coil in Embodiment 2 of the present invention.

[0036] Figure 8A This is a graph showing the magnetic field characteristics above the first position after the second adjustment block is installed, according to Embodiment 2 of the present invention.

[0037] Figure 9 This is a schematic diagram of the third adjusting block in Embodiment 3 of the present invention;

[0038] Figure 10 This is a schematic diagram of the third adjusting block being sleeved on the induction coil in Embodiment 3 of the present invention;

[0039] Figure 11 This is a schematic diagram of the magnetic field distribution between the substrate and the induction coil after a third adjustment block is provided on the induction coil in Embodiment 3 of the present invention.

[0040] Figure 11A This is a magnetic field characteristic curve above the first position after the third adjustment block is installed in Embodiment 3 of the present invention. Detailed Implementation

[0041] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0042] It should be understood that, when used in this specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.

[0043] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of the application. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.

[0044] It should also be further understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0045] As used in this specification and the appended claims, the term "if" may be interpreted, depending on the context, as "when," "once," "in response to determination," or "in response to detection." Similarly, the phrases "if determined" or "if [described condition or event] is detected" may be interpreted, depending on the context, as "once determined," "in response to determination," "once [described condition or event] is detected," or "in response to detection of [described condition or event]."

[0046] Furthermore, in the description of this application, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0047] Figure 1 This is a schematic diagram of a wafer processing apparatus 10 used in a chemical vapor deposition (CVD) process, comprising a reaction chamber 100. The reaction chamber 100 is used to deposit or grow thin films on a wafer W, and includes a generally cylindrical reaction chamber sidewall 101 and a chamber cover 102 made of a metallic material. A substrate 103 and an induction coil are disposed within the reaction chamber 100. Figure 1 (Not shown in the image), multiple wafers W to be processed are placed on substrate 103 along the circumferential direction of substrate 103.

[0048] In the CVD process, to accelerate the chemical reaction and produce high-quality thin films, the wafer W needs to be heated to a high temperature. Induction coils indirectly heat the wafer W. The principle is as follows: an alternating current within the induction coil generates a reciprocating magnetic field, which in turn creates a changing electric field on the substrate surface. This electric field induces eddy currents within the substrate 103, causing the substrate 103 to heat up. The substrate 103 then transfers this heat to the wafer W, bringing it to the required process temperature.

[0049] The magnetic field generated by the spirally distributed induction coils is not uniformly distributed on the substrate 103 (this is common knowledge and will not be elaborated here), resulting in poor uniformity of heat distribution on the substrate and reducing the yield of wafer W production. The non-uniformity of the magnetic field distribution on the substrate 103 can be improved by designing the position parameters of the induction coils.

[0050] Because the induction coil itself has very poor elasticity, the position adjustment of the induction coil in the prior art (changing the distance between the induction coil and the substrate 103, changing the distance between adjacent turns of the induction coil, etc.) is all about the overall adjustment of the coil, and it is difficult to make point adjustments. In many cases, only the position of the high temperature area or the low temperature area of ​​the substrate 103 can be changed. That is, it is not possible to effectively adjust the temperature of the high temperature area without having a significant impact on other areas. Moreover, the adjustment of the position of the induction coil itself is also very difficult.

[0051] After the induction coil is installed, it needs to be fixed or semi-fixed (the position of the induction coil can be finely adjusted within a certain range) to reduce the noise generated by the vibration of the induction coil. Due to calculation / simulation errors during the design process, there will still be a certain temperature difference in different areas of the substrate 103. When the temperature difference exceeds the set temperature difference range, it is difficult to adjust the heating result of the substrate 103 by changing the position of the induction coil.

[0052] On the other hand, the substrate 103 is sintered from powdered materials (such as graphite, silicon carbide, silicon nitride, etc.). During the sintering process, the density distribution of the powder material is uneven, resulting in significant differences in thermal conductivity across different regions of the substrate (also known as inherent defects in the substrate 103). If the uniformity of the heating temperature is adjusted by replacing the substrate 103, it will not only reduce the manufacturing efficiency of the wafer processing equipment 10 but also increase its manufacturing cost.

[0053] The wafer heating device and wafer processing equipment of the present invention can precisely adjust the temperature of the wafer W or the substrate by region even when the thermal conductivity of different regions of the substrate is large and the position of the induction coil cannot be adjusted, thus ensuring the uniformity of the wafer or substrate temperature and greatly improving the yield of wafer processing.

[0054] Example 1

[0055] This invention provides a wafer heating device for use in wafer processing equipment, such as... Figure 2 As shown, the wafer processing equipment includes a reaction chamber 200, within which a substrate 203 for supporting the wafer W to be processed is disposed. The surface of the substrate is coated with a corrosion-resistant and non-conductive ceramic coating. The wafer heating device of the present invention includes: at least one induction coil 204, at least one induction heating plate, and at least one adjustment block.

[0056] The induction coil 204 comprises multiple turns and is arranged spirally from the inside out within the reaction chamber 200. The induction coil 204 provides heat to the wafer W through induction heating of the corresponding induction heating plate. In this embodiment, as... Figure 2 As shown, an induction heating plate is provided inside the reaction chamber 200, which is configured as a substrate 203. An induction coil 204 for heating the substrate 203 is disposed inside the reaction chamber and located below the substrate 203. The substrate 203 heats the wafer W by thermal conduction.

[0057] The wafer heating device in this embodiment also includes a rotating shaft located below the substrate. Figure 2 (Not shown in the diagram), a rotating shaft drives the substrate 203 to rotate around the central axis of the substrate, so that the wafer W is heated more evenly. The induction coil 204 used to heat the substrate 203 is surrounded on the outer periphery of the rotating shaft. In another embodiment, the rotating shaft can also be coupled to the induction coil 204, so that the induction coil 204 rotates while the substrate 203 does not rotate, which can also make the wafer W heated more evenly.

[0058] The induction coil 204 includes a first region facing the substrate 203. An adjustment block, configured as a ferromagnetic or conductive material, is located within this first region. The adjustment block is detachably fitted onto the induction coil 204 to locally adjust the magnetic field distribution of the induction coil 204 at the substrate 203. A portion of the surface of the adjustment block (e.g., the inner surface) is also provided with an insulating layer (not shown) to form a non-electrical connection between the adjustment block and the induction coil 204. In this embodiment, the insulating layer is made of one or more of AlN ceramic, Al2O3 ceramic, SiC ceramic, and SiN ceramic; other insulating materials with good thermal conductivity may also be used.

[0059] The adjusting block includes a first adjusting block 206 with a U-shaped groove structure (e.g.) Figures 2 to 4 As shown). Figure 2 As shown, the first adjustment block 206 is mounted on the induction coil 204 with the opening of the U-shaped groove facing away from the substrate 203, so as to reduce the magnetic field strength at the point where the substrate 203 and the first adjustment block 206 are directly opposite each other.

[0060] Figure 5 , Figure 6 These diagrams illustrate the magnetic field distribution between the substrate 203 and the three-turn induction coils 204a, 204b, and 204c before and after the installation of the first adjusting block 206. The curves in the diagrams represent magnetic field lines, and the number of these lines is for illustrative purposes only. The dashed lines represent the area at the bottom of the substrate. It is easy to understand that the denser the magnetic field lines, the stronger the magnetic field. It should be further emphasized that... Figure 5 No adjustment blocks were installed.

[0061] Figure 6 The first adjustment block 206 is installed at the first position of the middle turn of the induction coil 204a. Figure 5A , Figure 6A The diagram also shows the magnetic field characteristics above the first position before and after the installation of the first adjustment block 206, where B represents the magnetic field strength above the first position, H represents the vertical distance between the point above the first position of the induction coil and the top surface of the induction coil, h2 represents the point located above the first position of the induction coil and at a vertical distance of h2 from the top surface of the induction coil, and h1 represents the point located above the first position of the induction coil and at the bottom surface of the substrate.

[0062] like Figure 5 As shown, before the first adjusting block 206 is installed, the magnetic field lines above the middle turn of the induction coil 204a are relatively densely distributed, resulting in a larger magnetic field strength above the middle turn of the induction coil 204a. When the substrate 203 is stationary relative to the induction coil 204, from Figure 5AAs can be seen, the magnetic field strength in the substrate area directly opposite the first position (hereinafter briefly referred to as the first adjustment area, which has a relatively small area range) reaches B1.

[0063] After installing the first adjustment block 206, as Figure 6 shown, due to the magnetic field concentrating characteristics of the first adjustment block 206, most of the magnetic field generated by the middle turn induction coil 204a at the first position is constrained within the first adjustment block 206, resulting in a decrease in the overall magnetic field strength above the first adjustment block 206 compared to before adjustment, and an increase in the magnetic field strength near the surface of the first adjustment block. As can be seen from Figure 6A it that when the induction coil 204 and the substrate 203 are relatively stationary, the magnetic field strength in the first adjustment area decreases to B2 (B2 < B1), the heat generated by the substrate 203 in the first adjustment area decreases, and the influence on the magnetic field strength of other substrate areas outside the first adjustment area is relatively small. At this time, it is also said that the first adjustment block 206 has a point adjustment effect on the substrate temperature.

[0064] It is easy to understand that when the substrate 203 rotates relative to the induction coil 204, the temperature of an annular area (this annular area covers the first adjustment area) on the substrate 203 can be reduced by the first adjustment block 206, and the first adjustment block 206 has relatively little influence on the temperature of other substrate areas outside this annular area, achieving precise area-by-area adjustment of the temperature of the substrate 203. That is, by rotating the substrate 203 relative to the induction coil 204, the above-mentioned point adjustment effect can be reflected in the surface area of the substrate 203.

[0065] In this embodiment, the wafer W is placed in the annular bearing area on the substrate 203. The distances from the inner ring and the outer ring of this bearing area to the center of the substrate are r1 and r2 respectively. When the substrate 203 rotates, before setting the first adjustment block 206, due to the difference in the magnetic field distribution of the induction coil 204 and the difference in the thermal conductivity of each area of the substrate, there is a relatively large temperature difference on the surface of the substrate 203 in the radial direction of the substrate. Based on the temperature difference on the surface of the substrate, the bearing area is virtually divided into multiple annular temperature zones. In this embodiment, the bearing area is virtually divided into two annular temperature zones (the number of annular temperature zones is only used as an example and is not a limitation of the present invention), which are the first annular temperature zone and the second annular temperature zone respectively. The distances from the inner ring and the outer ring of the first annular temperature zone to the center of the substrate are r1 and r3 respectively. The distances from the inner ring and the outer ring of the second annular temperature zone to the center of the substrate are r3 and r2 respectively. The temperature of the first annular temperature zone is lower than the temperature of the second annular temperature zone.

[0066] Existing technologies, such as adjusting the position of the induction coil 204, can adjust the bandwidth or position of the annular temperature band, but it is difficult to change the temperature difference between the annular temperature bands, i.e., it is difficult to eliminate the temperature difference between the annular temperature bands. However, in this embodiment of the present application, the first region of the induction coil 204 corresponds to the position of the second annular temperature band (the projection of the first region on the substrate 203 falls within the area covered by the second annular temperature band). By installing the first adjustment block 206 in the first region to reduce the heating efficiency of the induction coil 204 in the second annular temperature band, while the above adjustment has little impact on the heating efficiency of other regions of the substrate, the temperature of the second annular temperature band is directly reduced, rather than adjusting the bandwidth or position of the second annular temperature band. This directly reduces the temperature difference between the first and second annular temperature bands, improving the uniformity of the wafer surface temperature. It should be noted that the number of first adjustment blocks 206 can be set according to actual needs to adjust the reduction in the heating efficiency of the induction coil for the second annular temperature band, thereby further reducing the temperature difference between the first and second annular temperature bands.

[0067] When a medium-to-high frequency alternating current (e.g., greater than 20kHz) is supplied to the induction coil 204, the magnetic field generated by the induction coil 204 has strong penetrability. The first regulating block 206 is made of a thermally and electrically conductive material, which can confine most of the magnetic field generated by the induction coil 204 at the installation position of the first regulating block 206 inside the first regulating block 206, preventing it from penetrating the first regulating block 206 and dissipating outwards, thus ensuring the controllability of the induction heating plate temperature. Furthermore, the higher the frequency of the medium-to-high frequency alternating current, the stronger the eddy current generated by the magnetic field generated by the induction coil 204 on the surface of the first regulating block (this is the skin effect), resulting in more self-heating of the first regulating block 206. This means that more energy from the induction coil 204 is consumed by the first regulating block 206, and less energy is supplied by the induction coil 204 to the corresponding area of ​​the induction heating plate at the installation position of the first regulating block 206, resulting in a better effect of adjusting the temperature of the induction heating plate by area. Because the first adjusting block 206 has good thermal conductivity, it can prevent heat from accumulating inside the induction coil 204, thus preventing the induction coil 204 from melting due to overheating and ensuring the safety of wafer processing. In this invention, the thermally and electrically conductive material includes one or more of copper and stainless steel.

[0068] When supplying low-frequency alternating current to the induction coil 204, the first regulating block 206 is made of a thermally and magnetically conductive material (such as nickel-containing metal or iron-nickel alloy). Under low-frequency alternating current conditions, the magnetically conductive first regulating block 206 can more effectively confine most of the magnetic field generated by the induction coil 204 at the first regulating block mounting position within the first regulating block 206.

[0069] Example 2

[0070] In this embodiment, the adjusting block includes a second adjusting block 207. As Figure 7 shown, the second adjusting block 207 includes a first component 2071 and a second component 2072. The first component 2071 and the second component 2072 cooperate to form a hollow columnar structure that can surround the induction coil 204. The second adjusting block 207 is sleeved on the induction coil 204 in a surrounding manner to reduce the magnetic field intensity at the position where the induction heating plate faces the second adjusting block 207. The material of the second adjusting block 207 is the same as that of the first adjusting block 206.

[0071] Figure 8 The second adjusting block 207 in Figure 8A is sleeved on the first position of the middle turn of the induction coil 204a. Figure 8 Also shown is a magnetic field characteristic curve graph above the first position after the second adjusting block 207 is installed. As Figure 8A shown, almost all of the magnetic field generated by the middle turn of the induction coil 204a at the first position is confined within the second adjusting block 207. When the substrate 203 is stationary relative to the induction coil 204, the magnetic field intensity in the above-mentioned first adjusting region can be reduced through the second adjusting block 207, and the magnetic field intensity in other substrate regions outside the first adjusting region is less affected. When the substrate 203 is stationary relative to the induction coil 204, after the second adjusting block 207 is installed, as

[0072] shown, the magnetic field intensity in the first adjusting region drops to B3 (B3 < B2). It is easy to understand that since the second adjusting block 207 does not have an opening structure of a U-shaped groove, compared with the first adjusting block 206, the second adjusting block 207 has a better magnetic field concentrating effect, making the magnetic field intensity in the first adjusting region lower, and thus a better temperature reduction effect can be obtained.

[0073] In this embodiment, the second adjusting block 207 corresponds to the above-mentioned second annular temperature zone (the projection of the second adjusting block 207 on the substrate 203 falls within the range covered by the second annular temperature zone). When the substrate 203 rotates relative to the induction coil 204, the magnetic field intensity radiated to the second annular temperature zone can be greatly reduced through the second adjusting block 207, thereby reducing the heat generated in the second annular temperature zone and realizing regional adjustment of the wafer temperature. <C

[0073] To achieve more precise temperature adjustment of the wafer W, the first adjusting block 206 and the second adjusting block 207 can be used in combination. The numbers of the first adjusting block 206 and the second adjusting block 207 can be set according to actual needs to adjust the reduction amplitude of the heating efficiency of the induction coil for the second annular temperature zone, so as to further narrow the temperature difference between the first annular temperature zone and the second annular temperature zone.

[0074] Embodiment Three

[0075] As Figures 9 to 11As shown, the adjustment block in this embodiment includes a third adjustment block 208 with a U-shaped groove structure. As Figure 11 shown, the third adjustment block 208 can be sleeved on the induction coil 204 with the opening of the U-shaped groove facing the substrate. The magnetic field intensity at the position on the substrate directly opposite to the third adjustment block 208 is reduced by the third adjustment block 208. The third adjustment block 208 is made of the same material as the first adjustment block.

[0076] Figure 11 The third adjustment block 208 in [] is sleeved on the first position of the middle turn induction coil 204a. Figure 11A The magnetic field characteristic curve above the first position after the installation of the third adjustment block 208 is also shown. As Figure 11 shown, the magnetic field generated by the induction coil 204 at the installation position of the third adjustment block is constrained in the near-coil position, resulting in a higher magnetic field intensity in the near-coil position than before adjustment. When the substrate 203 is stationary relative to the induction coil 204, as Figure 11A shown, the magnetic field intensity in the above-mentioned first adjustment region is B4 (B4 < B1), and the change in the magnetic field intensity in other substrate regions outside the first adjustment region has little effect.

[0077] In this embodiment, the third adjustment block 208 corresponds to the above-mentioned second annular temperature zone, that is, the projection of the third adjustment block 208 on the substrate 203 falls within the range covered by the second annular temperature zone. When the substrate 203 rotates relative to the induction coil 204, the third adjustment block 208 can reduce the temperature of the second annular temperature zone and does not affect the temperature of other substrate regions outside the second annular temperature zone, finally achieving regional adjustment of the wafer temperature and ensuring the uniformity of the wafer surface temperature.

[0078] The number of the third adjustment blocks 208 can be set according to actual needs, or the third adjustment block 208 can be used in combination with the first adjustment block 206 and the second adjustment block 207 to adjust the reduction amplitude of the heating efficiency of the induction coil for the second annular temperature zone, so as to further narrow the temperature difference between the first annular temperature zone and the second annular temperature zone.

[0079] In Embodiments 1 to 3, the influence of the substrate, i.e., the workpiece to be heated, on the magnetic field distribution is not considered. It should be noted that since the environmental parameters, the substrate's own parameters, and the induction coil's own parameters do not change before and after adjustment, after adding the factor of the influence of the substrate on the magnetic field distribution, the influence trend of the adjustment block on the magnetic field distribution at the bottom surface of the substrate will still be the same, that is, the actual adjustment effect of the adjustment block on the temperature distribution of the substrate will still remain unchanged.

[0080] As Figure 2 shown, the present invention also provides a wafer processing device, including:

[0081] The reaction chamber 200 is equipped with a wafer heating device as described in this invention.

[0082] This invention does not require changing the existing arrangement of the induction coils. By using an adjustment block fixedly mounted on the induction coil, the magnetic field strength radiated by the induction coil at the installation position of the adjustment block to the corresponding area of ​​the corresponding induction heating plate is adjusted, thereby regulating the heat generated in the corresponding area of ​​the induction heating plate. This invention achieves precise temperature adjustment of the wafer W by region without adjusting the position of each turn of the induction coil, ensuring wafer temperature uniformity and significantly improving the yield of wafer processing.

[0083] The adjusting block of this invention can effectively overcome the uneven heating of wafer W caused by the uneven density of the induction heating plate. It can effectively mitigate the adverse effects of uneven density of the induction heating plate by reducing the local heating efficiency of the induction heating plate. Since there is no need to replace the induction heating plate, it not only improves the manufacturing efficiency of the wafer processing equipment but also significantly reduces the manufacturing cost. The adjusting block has a flexible arrangement and high degree of adjustment freedom. Furthermore, since there is no need to adjust the position of each turn of the induction coil, the tolerance for errors in coil design and installation is increased, and the assembly difficulty is reduced.

[0084] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A wafer heating device for use in wafer processing equipment, the wafer processing equipment including a reaction chamber, wherein a substrate for supporting a wafer is disposed within the reaction chamber, characterized in that, The wafer heating device includes: At least one induction coil, the induction coil comprising multiple turns; At least one induction heating plate, the induction coil inductively heats the induction heating plate, the wafer heating device provides heat to the wafer through the induction heating plate, and the induction coil includes a first region facing the induction heating plate; At least one adjusting block is detachably mounted on the induction coil. The adjusting block is configured as a ferromagnetic or conductive material and is located in the first region. The adjusting block includes an insulating layer at least on a portion of its surface to form a non-electrical connection between the adjusting block and the induction coil, thereby enabling local adjustment of the magnetic field distribution of the induction coil at the induction heating plate.

2. The wafer heating apparatus as described in claim 1, characterized in that, The adjustment block includes a first adjustment block, which has a U-shaped groove structure. The first adjustment block is sleeved on the induction coil with the opening of the U-shaped groove facing away from the induction heating plate. The first adjustment block reduces the magnetic field strength at the point where the induction heating plate and the first adjustment block are directly opposite each other.

3. The wafer heating apparatus as described in claim 1, characterized in that, The adjustment block includes a second adjustment block, which includes at least a first component and a second component. The first component and the second component cooperate to form a hollow columnar structure that can surround the induction coil. The second adjustment block is sleeved on the induction coil in a surrounding manner. The second adjustment block reduces the magnetic field strength at the point where the induction heating plate is directly opposite the second adjustment block.

4. The wafer heating apparatus as described in claim 1, characterized in that, The adjustment block includes a third adjustment block, which has a U-shaped groove structure. The third adjustment block is sleeved on the induction coil with the opening of the U-shaped groove facing the induction heating plate. The third adjustment block reduces the magnetic field strength at the point where the induction heating plate and the third adjustment block are directly opposite each other.

5. The wafer heating apparatus as described in claim 1, characterized in that, When supplying medium- to high-frequency AC power to the induction coil, the regulating block is made of a thermally and electrically conductive material; when supplying low-frequency AC power to the induction coil, the regulating block is made of a thermally and magnetically conductive material.

6. The wafer heating apparatus as described in claim 5, characterized in that, The thermally and electrically conductive material includes one or more of copper and stainless steel; the thermally and magnetically conductive material includes nickel metal or an iron-nickel alloy.

7. The wafer heating apparatus as described in claim 1, characterized in that, The induction heating plate is configured as the substrate, and the substrate is rotatably disposed relative to the induction coil to change the overall heat distribution of the substrate through the local adjustment; the induction coil is disposed in the reaction chamber and below the substrate.

8. The wafer heating apparatus as described in claim 1, characterized in that, The insulating layer is made of one or more of AlN ceramics, Al2O3 ceramics, SiC ceramics, and SiN ceramics.

9. The wafer heating apparatus as described in claim 7, characterized in that, It also includes a rotating shaft; the rotating shaft drives the substrate to rotate about the central axis of the substrate.

10. A wafer processing apparatus, characterized in that, include: A reaction chamber, wherein the reaction chamber is provided with a wafer heating device as described in any one of claims 1 to 9.

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