Electrode device and regulation method for preventing etching process from causing failure of sealing ring

Abstract

This invention belongs to the field of plasma etching technology, specifically relating to an electrode device and control method for preventing sealing ring failure caused by the etching process. The device includes an electrode body, which comprises a heating stage and a water-cooled plate arranged sequentially from top to bottom. The distance between the heating stage and the water-cooled plate is h. A heat-conducting ring is installed within h, and the heat-conducting ring is annular with an inner ring and an outer ring. A guide channel is opened on the heating stage at a position coaxial with the inner ring of the heat-conducting ring. An inner sealing ring is installed at the inner ring of the heat-conducting ring, sealing the guide channel and the distance between them. An outer sealing ring is installed at the outer ring of the heat-conducting ring, sealing the heat-conducting ring and the vacuum reaction chamber. The annular space between the inner and outer sealing rings is atmospheric, while the space outside the outer sealing ring is vacuum. The method includes control under both high and low temperature conditions. The electrode device is used to support the wafer and, combined with the control method, provides the wafer with the appropriate temperature required for the etching process.

Description

Technical Field

[0001] This invention belongs to the field of plasma etching technology, specifically relating to an electrode device and control method for preventing the failure of the sealing ring caused by the etching process. Background Technology

[0002] Currently, the electrode assembly, as the structure supporting the wafer during the etching process, is the most important factor affecting the uniformity of wafer etching. Among these factors, the temperature of the electrode assembly accounts for a large proportion, directly affecting the surface temperature of the wafer to be etched. Different process types have different requirements for the wafer surface temperature, in which case the wafer temperature can only be regulated by the temperature of the electrode assembly. For some special processes, such as InP etching, the wafer temperature needs to be very high, sometimes exceeding 400 degrees Celsius. However, existing electrode solutions generally use ordinary rubber rings to directly seal between electrode assemblies and between process chambers. But at temperatures above 400 degrees Celsius, ordinary rubber rings will lose their effectiveness, leading to air leakage and malfunction. Therefore, a special electrode assembly needs to be designed to meet the requirements of high-temperature processes. Summary of the Invention

[0003] This invention provides an electrode device and control method for preventing the failure of the sealing ring caused by the etching process. It is used to support the wafer and prevents the rubber ring from failing due to the etching process.

[0004] The technical solution adopted by the present invention to solve its technical problem is: an electrode device for preventing the failure of the sealing ring caused by the etching process, comprising an electrode body installed in a vacuum reaction chamber, an insulating pad provided at the bottom of the vacuum reaction chamber, the electrode body comprising a heating platform and a water-cooling plate arranged sequentially from top to bottom, a distance of height h between the heating platform and the water-cooling plate, a heat-conducting ring installed within the distance, the heat-conducting ring being annular and having an inner ring and an outer ring, and a guide channel for passing process gas being opened on the heating platform at a position coaxial with the inner ring of the heat-conducting ring;

[0005] An inner sealing ring is installed at the inner ring of the heat-conducting ring, and the inner sealing ring seals the guide channel and the spacing.

[0006] An outer sealing ring is installed on the outer ring of the heat-conducting ring, and the outer sealing ring seals the space between the heat-conducting ring and the vacuum reaction chamber.

[0007] The annular space between the inner sealing ring and the outer sealing ring is in an atmospheric state, while the space outside the outer sealing ring is in a vacuum state.

[0008] As a further preferred embodiment of the present invention, the water-cooled plate has a central circular hole, the central circular hole and the guide channel are arranged coaxially, and the central circular hole is connected to the guide channel.

[0009] As a further preferred embodiment of the present invention, the water-cooled plate is provided with a bent channel, the bent channel including oblique holes and straight holes, wherein:

[0010] One end of the inclined hole is connected to the central circular hole, and the other end of the inclined hole is inclined towards the external environment and connected to one end of the straight hole;

[0011] The straight holes are arranged vertically, and the other end of the straight holes is connected to the process gas.

[0012] As a further preferred embodiment of the invention, it further includes at least one deep hole for the passage of a temperature-sensing optical fiber, the deep hole being formed at the bottom of the heating platform.

[0013] As a further preferred embodiment of the present invention, the number of deep holes is multiple, and the multiple deep holes are symmetrically distributed on both sides of the guide channel.

[0014] As a further preferred embodiment of the present invention, it further includes a plurality of edge grooves, wherein the plurality of edge grooves are uniformly disposed at the outer peripheral edge of the bottom of the heating platform.

[0015] As a further preferred embodiment of the present invention, it further includes a first circular hole, which is formed on the water-cooling plate and is coaxially arranged with the deep hole, and the number of the first circular holes is the same as the number of the deep holes.

[0016] As a further preferred embodiment of the present invention, it further includes a plurality of fixing holes and a plurality of screws, wherein the heating platform and the water-cooling plate are fixed to the insulating pad by the plurality of screws, the plurality of fixing holes are evenly distributed at the outer peripheral edges of the heating platform and the water-cooling plate, and the plurality of screws are installed in the fixing holes one by one.

[0017] As a further preferred embodiment of the present invention, it further includes a plurality of gaskets, wherein the plurality of gaskets are disposed immediately below the countersunk portion of the plurality of fixing holes.

[0018] As a further preferred embodiment of the present invention, the distance h between the heating platform and the water-cooled plate is 3-5 mm.

[0019] As a further preferred embodiment of the present invention, the thickness of the heat-conducting ring is ha, ha <h。

[0020] As a further preferred embodiment of the present invention, the upper surface of the water-cooled plate is recessed into the lower surface of the water-cooled plate, and the depth of this recessed portion is h1, the range of h1 being 0.1-2mm.

[0021] A method for controlling an electrode device to prevent the sealing ring from failing due to etching processes is also provided. This method includes control under two operating conditions: a high-temperature condition and a low-temperature condition.

[0022] Under high-temperature conditions, the specific control steps of the control method are as follows:

[0023] Step S1: First, set the required temperature of the heating platform and input the temperature of the coolant inside the electrode body;

[0024] Step S2: The inner sealing ring seals the guide channel and the spacing, and the outer sealing ring seals the heat-conducting ring and the vacuum reaction chamber.

[0025] Step S3: Introduce process gas into the guide channel to raise the temperature of the heating platform, and simultaneously introduce coolant into the water-cooled plate;

[0026] Step S4: When the temperature of the heating stage reaches the expected temperature, start the high-temperature etching process, stop the process gas from being introduced into the guide channel, and stop the coolant from being introduced into the water-cooled plate until the high-temperature etching process is completed.

[0027] If the temperature of the heating platform does not reach the expected temperature, increase the heating temperature of the heating platform or increase the temperature of the coolant.

[0028] Step S5: As the high-temperature etching process proceeds, the plasma in the vacuum reaction chamber causes the heating stage to continuously heat up. The heat-conducting ring transfers the temperature of the coolant in the water-cooling plate to the heating stage to achieve cooling and ensure that the heating stage is at the required temperature.

[0029] Under low-temperature operating conditions, the specific control steps of the control method are as follows:

[0030] Step S1: First, set the required temperature of the heating platform and input the temperature of the coolant inside the electrode body;

[0031] Step S2: The inner sealing ring seals the guide channel and the spacing, and the outer sealing ring seals the heat-conducting ring and the vacuum reaction chamber.

[0032] Step S3: Introduce process gas into the guide channel to raise the temperature of the heating stage; or, if no process gas is introduced, the heating stage will not work.

[0033] Step S3: Introduce coolant into the water-cooled plate;

[0034] Step S4: When the temperature of the heating stage reaches the expected temperature, the low-temperature etching process begins. The heating stage stops heating and the coolant supply stops until the low-temperature etching process is completed.

[0035] When the temperature of the heating platform does not reach the expected temperature, the temperature of the coolant flowing into the water-cooling plate is reduced, and the reduced temperature of the coolant from the heat-conducting ring is transferred to the heating platform.

[0036] By employing the above technical solutions, the present invention has the following beneficial effects compared to the prior art:

[0037] 1. The electrode device of the present invention enables low-temperature and high-temperature processes by introducing a coolant:

[0038] In low-temperature operating conditions, a coolant at a suitable temperature is introduced to achieve low-temperature processing.

[0039] Under high-temperature conditions, helium gas is introduced sequentially from the inlet interface into the bent channel, the central circular hole, the guide channel, and the helium gas tank, so that the helium gas can be evenly distributed on the back side of the wafer to transfer the temperature to the back side of the wafer and reach the required temperature.

[0040] 2. This invention has two temperature-sensing optical fibers. The arrangement of the two temperature-sensing optical fibers can provide double protection, so that if one temperature-sensing optical fiber fails, the etching process will not be affected. The failed temperature-sensing optical fiber can be replaced or repaired after the etching process is completed.

[0041] 3. The present invention adds several edge grooves around the bottom circle of the heating platform to reduce the contact area between the cold water plate and the heating platform and reduce the direct transfer of heat.

[0042] 4. This invention adjusts the temperature transfer between the heating platform and the water-cooled plate by replacing the heat-conducting rings of different thicknesses. A thin heat-conducting ring results in a large gap h3, thus lowering the temperature transfer efficiency; a thick heat-conducting ring results in a small gap h3, thus improving the temperature transfer effect.

[0043] 5. During the high-temperature process, there is vertical thermal expansion at the fixing hole S on the heating stage. This thermal expansion will cause the screw to extend upward, which will damage the insulating pad and cause the vacuum reaction chamber to leak vacuum. In order to protect the insulating pad and reduce the stretching of the insulating pad by thermal expansion, a gasket is installed below the countersunk head adjacent to the fixing hole.

[0044] 6. The upper surface of the screw of the present invention needs to be close to the stepped surface of the heating table to prevent radio frequency ignition from occurring due to the large gap between the upper surface of the screw and the bottom surface of the peripheral protective ceramic installed on the stepped surface.

[0045] 7. The control method of the present invention adjusts the temperature of the heating stage by a temperature controller and the temperature of the water-cooled plate by a chiller to realize high-temperature plasma etching process and low-temperature plasma etching process; and under high-temperature conditions, the temperature of the water-cooled plate is adjusted by a chiller to prevent the inner sealing groove and the inner sealing ring of the outer sealing groove from directly contacting the high temperature. Attached Figure Description

[0046] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0047] Figure 1 This is an exploded view of the overall structure of the present invention;

[0048] Figure 2 This is a schematic diagram of the bottom structure of the heating platform of the present invention;

[0049] Figure 3 This is a schematic diagram of the top structure of the heating platform of the present invention;

[0050] Figure 4 This is an exploded view a of the water-cooled plate structure of the present invention;

[0051] Figure 5 This is exploded view b of the water-cooled plate structure of the present invention;

[0052] Figure 6 This is a schematic cross-sectional view of the present invention;

[0053] Figure 7 This is a partially enlarged cross-sectional view of the present invention;

[0054] Figure 8 This is a schematic diagram of the bottom structure of the water-cooled plate of the present invention;

[0055] Figure 9 This is a cross-sectional schematic diagram (b) of the present invention;

[0056] Figure 10 This is a flow chart of the temperature control of the electrode device during the high-temperature process of this invention;

[0057] Figure 11 This is a flow chart of the temperature control of the electrode device during the low-temperature process of this invention;

[0058] Figure 12 This is a schematic diagram of the connection between the device and the auxiliary equipment of the present invention.

[0059] In the diagram: 101, temperature-measuring fiber optic cable; 102, air inlet connector; 2, electrode body; 201, first circular hole; 202, water-cooled plate body; 203, water inlet and outlet; 50, heating platform; 503, helium tank; 504, guide channel; 505, through hole; 506, deep hole; 507, heating wire; 508, second groove; 509, first groove; 510, edge groove; 60, water-cooled plate; 601, inner sealing groove; 602, water passage groove; 603, water blocking plate; 604, central circular hole; 605, bent channel; 606, outer sealing groove; 607, oblique hole; 608, straight hole; 70, heat-conducting ring; 80, screw; 90, gasket; 100, inner sealing groove; 110, outer sealing groove. Detailed Implementation

[0060] The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic diagrams, illustrating only the basic structure of the invention, and therefore only show the components relevant to the invention.

[0061] In the description of this invention, it should be understood that the terms "left side," "right side," "upper part," "lower part," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. "First," "second," etc., do not indicate the importance of the components, and therefore should not be construed as a limitation of this invention. The specific dimensions used in this embodiment are only for illustrating the technical solution and do not limit the scope of protection of this invention.

[0062] Example 1

[0063] This embodiment provides a preferred implementation scheme, such as... Figures 1 to 12 As shown, an electrode device for preventing seal failure caused by etching processes includes an electrode body installed in a vacuum reaction chamber. An insulating pad is provided at the bottom of the vacuum reaction chamber. The electrode body 2 includes a heating stage 50 and a water-cooled plate 60 arranged sequentially from top to bottom. This electrode device is located at the very center of the vacuum reaction chamber, serving to support the wafer and provide the wafer with the appropriate temperature required for the etching process.

[0064] like Figure 7 As shown, there is a distance of height h between the heating platform 50 and the water-cooled plate 60, and a heat-conducting ring 70 is installed within the distance. Specifically, the distance h is the depth of the second groove 508 formed by the indentation of the bottom surface of the heating platform 50 towards its top surface, and the depth h of the second groove 508 ranges from 3 to 5 mm.

[0065] like Figure 6 As shown, the heat-conducting ring 70 is annular and has an inner ring and an outer ring. A guide channel 504 for passing process gas is opened on the heating platform 50 at a position coaxial with the inner ring of the heat-conducting ring 70. An inner sealing ring 100 is installed at the inner ring of the heat-conducting ring 70, and the inner sealing ring 100 seals the guide channel 504 and the distance h. An outer sealing ring 110 is installed at the outer ring of the heat-conducting ring 70, and the outer sealing ring 110 seals the heat-conducting ring 70 and the vacuum reaction chamber. The annular space between the inner sealing ring 100 and the outer sealing ring 110 is in an atmospheric state, and the space outside the outer sealing ring 110 is in a vacuum state.

[0066] Preferably, the heating platform 50 is in the shape of a stepped disc, and a heating wire 507 is arranged inside the heating platform 50. The heating wire 507 is used to heat the entire heating platform 50 during high-temperature processes. The heating wire 507 and control lines inside the heating platform 50 extend out of the heating platform 50 to facilitate the maintenance of the heating wire 507 inside the heating platform 50.

[0067] like Figure 2 and Figure 3 As shown, the top surface of the heating stage 50 is recessed towards the heat-guiding ring 70 to form a first groove 509, which is used to limit the position of the wafer. A helium gas reservoir 503 is formed on the bottom surface of the first groove 509. Preferably, the helium gas reservoir 503 includes several annular grooves centered on the center of the bottom surface of the first groove 509 and several linear grooves radiating outwards from the center of the bottom surface of the first groove 509. The helium gas reservoir 503 is used to transfer helium gas, allowing it to spread within the reservoir, thereby transferring the temperature of the heating stage 50 to the back side of the wafer. Temperature control of the wafer surface is achieved by controlling the temperature of the helium gas transferred to the heating stage 50.

[0068] Furthermore, process gas helium is introduced into the helium tank 503 through the guide channel 504, and then the helium spreads within the helium tank 503, allowing the helium to be evenly distributed on the back side of the wafer. The helium transfers the temperature of the heating stage 50 to the back side of the wafer, and controlling the temperature of the heating stage 50 controls the temperature of the introduced helium, thereby achieving temperature control of the wafer surface. A central circular hole 604 is provided at the coaxial position between the water-cooled plate 60 and the guide channel 504 for the passage of the ejector pin lifting mechanism.

[0069] A plurality of equidistant through holes 505 are formed on the top surface of the heating stage 50 at a position coaxial with the periphery of the guide channel 504, and the through holes 505 are connected to the guide channel 504. Preferably, the number of through holes 505 is four. The ejector pins for transferring the wafer can pass through four through holes 505, and the four through holes 505 are connected to the helium gas tank 503 on the upper surface of the heating stage 50.

[0070] The heating stage 50 has at least one deep hole 506 for mounting a temperature-sensing optical fiber 101. The probe of the temperature-sensing optical fiber 101 can be inserted into the heating stage 50 and is close to the upper surface of the heating stage 50. Preferably, there are two deep holes 506, that is, the electrode body 2 has two temperature-sensing optical fibers 101. The function of the temperature-sensing optical fiber 101 is to detect the temperature of the heating stage 50 and achieve precise temperature control. The arrangement of two temperature-sensing optical fibers 101 can provide double protection, preventing the etching process from continuing if one temperature-sensing optical fiber 101 fails. The failed temperature-sensing optical fiber 101 can be replaced or repaired after the etching process is completed.

[0071] like Figure 4As shown, the water-cooled plate 60 is generally disc-shaped. The water-cooled plate 60 includes a water-cooled plate body 202. The water-cooled plate body 202 has a first circular hole 201, an inner sealing groove 601, and an outer sealing groove 606. The first circular hole 201 is located on the water-cooled plate 60 and is coaxial with the deep hole 506. The first circular hole 201 is used for the passage of the temperature-sensing optical fiber 101. Preferably, the number of first circular holes 201 is the same as the number of deep holes 506. The inner sealing groove 601 is located adjacent to the periphery of the central circular hole 604 on the top surface of the water-cooled plate 60, and an inner sealing groove 100 is installed within the inner sealing groove 601. The outer sealing groove 606 is located adjacent to the periphery of the top surface of the water-cooled plate 60, and an outer sealing groove 110 is installed within the outer sealing groove 606.

[0072] Furthermore, a water channel 602 is opened at the bottom of the water-cooled plate body 202. Preferably, the water channel 602 is distributed around the bottom surface of the water-cooled plate body 202 and then extends towards the center of the water-cooled plate body 202 while avoiding the first circular hole 201 and the central circular hole 604, thus occupying the bottom surface area of ​​the water-cooled plate body 202 to the greatest extent.

[0073] Furthermore, this embodiment also includes a water-blocking plate 603, which covers the water channel 602 and has a shape consistent with that of the water channel 602. An inlet / outlet 203 is provided on the side of the water-blocking plate 603 away from the water channel 602, comprising an inlet and an outlet. A liquid channel for coolant flow is formed between the water-blocking plate 603 and the water channel 602. Preferably, the water-blocking plate 603 is welded to the water channel 602, allowing coolant to circulate within the liquid channel in conjunction with the inlet / outlet 203, thus cooling the water-blocking plate 603 and the components mounted thereon. Preferably, a water distribution connector is installed on the inlet and outlet of the inlet / outlet 203, respectively.

[0074] Further, a bent channel 605 is provided inside the water cooling plate 60. The bent channel 605 includes an inclined hole 607 and a straight hole 608. One end of the inclined hole 607 is connected to the central circular hole 604 on the water cooling plate 60, and the other end is inclined towards the external environment and connected to one end of the straight hole 608. The straight hole 608 is arranged in the vertical direction, and an air inlet joint 102 is welded to the other end thereof, and process gas helium is connected through the air inlet joint 102. Preferably, the inclined hole 607 penetrates through to the central circular hole 604 on the water cooling plate 60, and helium is introduced through the air inlet joint 102. The helium passes through the middle space of the central circular hole 604 on the water cooling plate 60 and the middle space of the guiding channel 504 (specifically, since the thimble mechanism is installed at the central circular hole 604, the bottom of the central circular hole 604 and the thimble mechanism are in a sealed state, so the helium can only spread upward from the central circular hole 604 into the guiding channel 504). Then the helium spreads in the helium groove 503 at the bottom of the upper surface of the heating table 50, so as to achieve a uniform distribution of helium on the back surface of the wafer to a great extent, and thus better transfer the temperature of the heating table 50 evenly to the wafer.

[0075] Further, this embodiment also includes a plurality of fixing holes and a plurality of screws 80 for fixing the heating table 50 and the water cooling plate 60 on the insulating pad. The plurality of fixing holes are evenly distributed at the outer peripheral edges of the heating table 50 and the water cooling plate 60, and the plurality of screws 80 are respectively installed in the fixing holes.

[0076] The electrode device of this embodiment can realize both low-temperature plasma etching and high-temperature plasma etching. When performing high-temperature plasma etching, the heating wire 507 inside the heating table 50 works to heat the electrode body 2 to a set temperature. At this time, a coolant at a certain temperature is passed through the water cooling plate 60 to cool all the sealing rings and ensure the normal vacuum degree of the electrode body 2. When performing the low-temperature plasma etching process, the heating wire inside the heating table 50 works at a low temperature or does not work. However, due to the existence of plasma above the electrode, the heating table 50 continues to heat up and accurate temperature control cannot be achieved. At this time, the low temperature of the water cooling plate 60 needs to be transferred to the heating table 50, and the function of the heat conduction ring 70 is to adjust the temperature transfer effect between the upper and lower layers.

[0077] Further, as Figure 7 shown, the thickness of the heat conduction ring 70 is ha, and ha < h. The heat conduction ring 70 is tightened on the water cooling plate 60, and there is a gap h3 between the heat conduction ring 70 and the heating table 50. In the actual application process, by adjusting the thickness ha of the heat conduction ring 70, the gap between the water cooling plate 60 and the heating table 50 is adjusted, so as to adjust the heat transfer effect between the low temperature and the high temperature.

[0078] If, during the process, it is found that the heat-conducting ring 70 transfers a large amount of the low temperature of the water-cooled plate 60 to the heating platform 50 in the high-temperature process, affecting the temperature uniformity of the heating platform 50, a thinner heat-conducting ring 70 can be replaced. Since the bottom surface of the water-cooled plate 60 is filled with a large amount of circulating coolant, and the low temperature of the coolant may greatly affect the heating efficiency of the heating platform 50, that is, the low temperature on the water-cooled plate 60 will be transferred to the heating platform 50 through the contact surface between the water-cooled plate 60 and the heating platform 50.

[0079] To reduce the contact area between the cooling plate 60 and the heating platform 50 and reduce direct heat transfer, several edge grooves 510 are added to the outer circumference of the bottom of the heating platform 50. The depth of the edge grooves 510 is h2 (h2 ranges from 0.1 to 5 mm). Specifically, the edge grooves 510 are formed by recessing the outer circumference of the bottom of the heating platform 50 towards the upper surface of the heating platform 50, except for the area where the heating platform 50 and the cooling plate 60 must contact (the area of ​​the fixing holes around it). The presence of h2 can reduce the contact area between the heating platform 50 and the cooling plate 60, and prevent the temperature of the cooling plate from being excessively transferred to the heating platform 50, which would cause uneven heat distribution on the heating platform 50 and reduce the heating effect. Meanwhile, a recessed portion is formed on the upper surface of the water-cooled plate 60, extending towards its lower surface. The depth of this recess is h1 (ranging from 0.1 to 2 mm). This recessed area extends from the inner ring of the outer sealing groove 606 (where the outer sealing groove 110 is placed) to the outer ring of the inner sealing groove 601 (where the inner sealing groove 100 is placed), and this area is atmospheric. This recessed depth h1 not only does not affect the sealing effect of the inner sealing groove 100 and the outer sealing groove 110, but also reduces the contact area between the heating platform 50 and the water-cooled plate 60. The heat transfer effect of both the heating platform 50 and the water-cooled plate 60 is controlled by the distance h3 between the heat-conducting ring 70 and the second groove 508 on the bottom surface of the heating platform 50. Figure 7 As shown, in the low-temperature process, it was found that the temperature of the heating stage 50 was too high. The heat-conducting ring 70 with a larger thickness can be replaced to improve the cooling efficiency.

[0080] like Figure 9As shown, the heating stage 50 and the water-cooled plate 60 are fixed to the bottom insulating pad by a number of screws 80 evenly distributed around them; preferably, the insulating pad is made of ceramic. During high-temperature processes, the fixing holes S on the heating stage 50 (S represents the depth of the bottom hole of the outer ring fixing holes of the heating stage 50, i.e., the hole depth after removing the countersunk head) experience vertical thermal expansion. This thermal expansion will cause the screws 80 to extend upwards, damaging the insulating pad and causing vacuum leakage in the equipment. To protect the insulating pad and reduce the stretching of the insulating pad due to thermal expansion, a gasket 90 is installed below the countersunk head adjacent to the fixing hole. Preferably, the gasket 90 is made of heat-resistant material or a material with a low coefficient of thermal expansion, such as ceramic or stainless steel. The presence of the gasket 90 can reduce the size of S, thereby reducing thermal expansion at that point. At the same time, the upper surface of the screws 80 needs to be close to the stepped surface of the heating stage 50 to prevent radio frequency ignition from occurring due to a large gap between the upper surface of the screws 80 and the bottom surface of the peripheral protective ceramic installed on the stepped surface.

[0081] like Figure 12 The diagram shows the connection between the equipment and the auxiliary device. This implementation also includes a computer, a temperature controller, and a chiller. The computer and the temperature controller transmit signals bidirectionally, as do the computer and the chiller. The temperature controller is also connected to the heating wire 507, and the temperature measuring fiber optic cable 101 transmits the signal to the temperature controller. The chiller is connected to the inlet and outlet of the water inlet and outlet 203 set on the water blocking plate 603, respectively.

[0082] like Figure 10 and Figure 11 The diagrams shown illustrate the temperature control flow charts for the electrodes during high-temperature and low-temperature processes, respectively. During these processes, the actual surface temperature of the heating stage 50 is fed back via a temperature-sensing fiber optic cable 101 mounted at the bottom of the motor body 2. This signal is then sent to the computer, which controls the temperature controller to set the input power of the heating stage 50 and the output coolant temperature of the chiller, thereby achieving the desired process temperature. The etching process in this embodiment can meet temperatures ranging from -30℃ to 400℃. Based on actual processes, the optimal process temperature range for the machine is approximately 0℃ to 260℃.

[0083] like Figure 9 As shown, the specific process for electrode temperature control during high-temperature processes is as follows (high temperature is above 180 degrees Celsius):

[0084] Step S1: First, set the required temperature of the heating platform 50 and the temperature of the coolant output by the chiller;

[0085] Step S2: The inner sealing ring 100 seals the guide channel 504 and the spacing h, and the outer sealing ring 110 seals the heat-conducting ring 70 and the vacuum reaction chamber.

[0086] Step S3: Process gas is introduced into the guide channel 504, the heating table 50 is heated, and coolant is introduced into the connector installed on the inlet and outlet 203 through the water pipe. The coolant flows into the cooling channel.

[0087] Step S4: When the temperature of the heating stage 50 reaches the expected temperature, the high-temperature etching process begins, the process gas is stopped from being introduced into the guide channel 504, and the coolant is stopped from being introduced into the water-cooled plate 60 until the high-temperature etching process ends.

[0088] If the temperature of the heating platform 50 does not reach the expected temperature, increase the heating temperature of the heating platform 50 or increase the temperature of the coolant.

[0089] Step S5: As the high-temperature etching process proceeds, the plasma in the vacuum reaction chamber causes the heating stage 50 to continuously heat up. The heat-conducting ring 70 transfers the temperature of the coolant in the water-cooled plate 60 to the heating stage 50 to achieve cooling, ensuring that the heating stage 50 is at the required temperature.

[0090] like Figure 10 As shown, the specific process for electrode temperature control during low-temperature processing is as follows (low temperature is below 20 degrees Celsius):

[0091] Step S1: First, set the temperature that the heating stage 50 needs to reach and input the temperature of the coolant in the electrode body 2;

[0092] Step S2: The inner sealing ring 100 seals the guide channel 504 and the spacing, and the outer sealing ring 110 seals the heat-conducting ring 70 and the vacuum reaction chamber.

[0093] Step S3: Introduce process gas into the guide channel 504 to heat up the heating stage 50; or do not introduce process gas and the heating stage 50 will not work.

[0094] Step S3: Introduce coolant into the water-cooled plate 60;

[0095] Step S4: When the temperature of the heating stage 50 reaches the expected temperature, the low-temperature etching process begins. The heating stage 50 stops heating and the coolant supply stops until the low-temperature etching process is completed.

[0096] When the temperature of the heating platform 50 does not reach the expected temperature, the temperature of the coolant flowing into the water-cooled plate 60 is reduced, and the reduced temperature of the coolant in the heat-conducting ring 70 is transferred to the heating platform 50.

[0097] Those skilled in the art will understand that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless defined as herein.

[0098] The meaning of "and / or" as used in this application includes situations where each exists alone or both exist simultaneously.

[0099] The term "connection" as used in this application can mean a direct connection between components or an indirect connection between components through other components.

[0100] Based on the above-described preferred embodiments of the present invention, and through the foregoing description, those skilled in the art can make various changes and modifications without departing from the inventive concept. The technical scope of this invention is not limited to the contents of the specification, but must be determined according to the scope of the claims.

Claims

1. An electrode device for preventing seal failure caused by etching process, comprising an electrode body installed in a vacuum reaction chamber, wherein an insulating pad is provided at the bottom of the vacuum reaction chamber, and the electrode body (2) comprises a heating stage (50) and a water-cooling plate (60) arranged sequentially from top to bottom, characterized in that: There is a gap of height h between the heating platform (50) and the water-cooled plate (60). A heat-conducting ring (70) is installed in the gap. The heat-conducting ring (70) is annular and has an inner ring and an outer ring. A guide channel (504) for passing process gas is opened on the heating platform (50) at a position coaxial with the inner ring of the heat-conducting ring (70). The water-cooled plate (60) has a central circular hole (604), which is connected to the guide channel (504); The water-cooled plate (60) is provided with a bent channel (605) for introducing process gas, and the bent channel (605) is connected to the central circular hole (604); The heating platform (50) is provided with a helium tank (503) at the top, and the guide channel (504) is connected to the helium tank (503); An inner sealing ring (100) is installed at the inner ring of the heat-conducting ring (70), and the inner sealing ring (100) seals the guide channel (504) and the gap. An outer sealing ring (110) is installed on the outer ring of the heat-conducting ring (70), and the outer sealing ring (110) seals the heat-conducting ring (70) and the vacuum reaction chamber. The annular space between the inner sealing ring (100) and the outer sealing ring (110) is in an atmospheric state, while the space outside the outer sealing ring (110) is in a vacuum state.

2. The electrode device for preventing sealing ring failure caused by etching process according to claim 1, characterized in that: The central circular hole (604) and the guide channel (504) are arranged coaxially.

3. The electrode device for preventing seal failure caused by etching process according to claim 2, characterized in that: The bent channel (605) includes an oblique hole (607) and a straight hole (608), wherein: One end of the oblique hole (607) is connected to the central circular hole (604), and the other end of the oblique hole (607) is obliquely directed towards the external environment and connected to one end of the straight hole (608); The straight hole (608) is arranged in a vertical direction, and the other end of the straight hole (608) is connected to the process gas.

4. The electrode device for preventing seal failure caused by etching process according to claim 1, characterized in that: It also includes at least one deep hole (506) for the passage of a temperature-sensing optical fiber (101), the deep hole (506) being formed at the bottom of the heating stage (50).

5. The electrode device for preventing seal failure caused by etching process according to claim 4, characterized in that: The deep holes (506) are provided in multiple ways, and the multiple deep holes (506) are symmetrically distributed on both sides of the guide channel (504).

6. The electrode device for preventing seal failure caused by etching process according to claim 4, characterized in that: It also includes several edge grooves (510), which are evenly arranged at the outer periphery of the bottom of the heating table (50).

7. The electrode device for preventing seal failure caused by etching process according to claim 4, characterized in that: It also includes a first circular hole (201), which is formed on the water-cooled plate (60), and the first circular hole (201) is coaxially arranged with the deep hole (506), and the number of the first circular holes (201) is the same as the number of the deep holes (506).

8. The electrode device for preventing seal failure caused by etching process according to claim 1, characterized in that: It also includes several fixing holes and several screws (80). The heating platform (50) and the water-cooled plate (60) are fixed on the insulating pad by the several screws (80). The several fixing holes are evenly distributed on the outer periphery of the heating platform (50) and the water-cooled plate (60). The several screws (80) are installed in the fixing holes one by one.

9. The electrode device for preventing seal failure caused by etching process according to claim 8, characterized in that: It also includes a number of gaskets (90), which are disposed immediately below the countersunk head of the number of fixing holes.

10. The electrode device for preventing seal failure caused by etching process according to claim 1, characterized in that: The distance h between the heating platform (50) and the water-cooled plate (60) is 3-5 mm.

11. The electrode device for preventing seal failure caused by etching process according to claim 1, characterized in that: The thickness of the heat-conducting ring (70) is ha, ha <h。 12. The electrode device for preventing seal failure caused by etching process according to claim 1, characterized in that: The upper surface of the water-cooled plate (60) is recessed towards the lower surface of the water-cooled plate (60), and the depth of this recessed portion is h1, the range of h1 being 0.1-2mm.

13. A method for controlling an electrode device to prevent the sealing ring from failing due to etching processes, characterized in that: The control method utilizes the electrode device described in any one of claims 1-12 for control, and the control method includes control under two operating conditions: one is a high-temperature operating condition, and the other is a low-temperature operating condition, wherein: Under high-temperature conditions, the specific control steps of the control method are as follows: Step S1: First, set the temperature that the heating platform (50) needs to reach and the temperature of the coolant output by the chiller; Step S2: The inner sealing ring (100) seals the guide channel (504) and the gap, and the outer sealing ring (110) seals the heat-conducting ring (70) and the vacuum reaction chamber. Step S3: Process gas is introduced into the guide channel (504), the heating stage (50) is heated, and coolant is introduced into the water-cooled plate (60) at the same time; Step S4: When the temperature of the heating stage (50) reaches the expected temperature, start the high-temperature etching process, stop the process gas from being introduced into the guide channel (504), and stop the coolant from being introduced into the water-cooled plate (60) until the high-temperature etching process ends; when the temperature of the heating stage (50) does not reach the expected temperature, increase the heating temperature of the heating stage (50) or increase the temperature of the coolant. Step S5: As the high-temperature etching process proceeds, the plasma in the vacuum reaction chamber causes the heating stage (50) to continuously heat up. The heat-conducting ring (70) transfers the temperature of the coolant in the water-cooled plate (60) to the heating stage (50) to achieve cooling, ensuring that the heating stage (50) is at the required temperature. Under low-temperature operating conditions, the specific control steps of the control method are as follows: Step S1: First, set the temperature required for the heating stage (50) and input the temperature of the coolant in the electrode body (2); Step S2: The inner sealing ring (100) seals the guide channel (504) and the gap, and the outer sealing ring (110) seals the heat-conducting ring (70) and the vacuum reaction chamber. Step S3: Introduce process gas into the guide channel (504) to heat up the heating stage (50); or do not introduce process gas and the heating stage (50) does not work. Step S4: Introduce coolant into the water-cooled plate (60); Step S5: When the temperature of the heating stage (50) reaches the expected temperature, the low-temperature etching process begins. The heating stage (50) stops heating and the coolant is stopped flowing until the low-temperature etching process ends. When the temperature of the heating platform (50) does not reach the expected temperature, the temperature of the coolant flowing into the water-cooled plate (60) is reduced, and the reduced temperature of the coolant in the heat-conducting ring (70) is transferred to the heating platform (50).

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