A voltage division system, a photomultiplier tube and a detector

Abstract

The application discloses a voltage division system, a photomultiplier tube and a detector, relates to the technical field of radiation detection, and solves the problem that the prior art voltage division system cannot meet the requirements of small size and high temperature resistance. The voltage division system comprises a substrate module, the substrate module is provided with a resistance mounting area and / or an active device mounting area, the resistance mounting area is provided with resistance paste with a preset thickness and high-temperature curing, the active device mounting area is provided with an active device die, and the active device die is packaged in a first space formed by the first adhesive and the substrate module, and the first adhesive is a high-temperature-resistant material. The voltage division system is uniquely designed for the resistance and the active device, realizes the effects of small size and high temperature resistance, can work for a long time in a high-temperature environment above 200 DEG C through tests, and can effectively extend the depth of oil exploration and exploitation when applied in the field of oil exploitation.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of radiation detection, in particular to a voltage dividing system, a photomultiplier tube and a detector. BACKGROUND

[0002] The photomultiplier tube is a vacuum electronic device for converting weak light signals into electrical signals, which is often combined with a scintillator to form a scintillation detector and applied in various fields such as chemical industry, geological exploration, medical treatment and space research. The photomultiplier tube is composed of a photocathode, a multiplication system and an anode. In order to make the photomultiplier tube work normally, a high voltage of about 500V-3000V needs to be applied between the cathode and the anode, and a voltage dividing system is needed to distribute voltage to the photomultiplier tube so that the voltage between each electrode reaches the specified voltage.

[0003] In the field of oil exploitation, the while-drilling scintillation detector needs to follow the drill bit into the underground, and therefore needs to work in a high-temperature and narrow environment. Therefore, the photomultiplier tube and its voltage dividing system need to have the characteristics of high temperature resistance and small size. With the increasing depth of oil exploitation, in order to adapt to deep drilling, the photomultiplier tube and its voltage dividing system need to be smaller and more temperature-resistant. The voltage dividing system currently equipped with the photomultiplier tube cannot meet the requirements, and this problem needs to be solved urgently. SUMMARY

[0004] The present application provides a voltage dividing system, a photomultiplier tube and a detector, which solve the problem that the voltage dividing system of the photomultiplier tube in the prior art cannot meet the requirements of small size and high temperature resistance.

[0005] In a first aspect, a voltage dividing system is provided, which includes a substrate module, the substrate module being provided with a resistance mounting area and / or an active device mounting area;

[0006] The resistance mounting area is provided with resistance paste of a preset thickness and high-temperature solidification;

[0007] The active device mounting area is provided with an active device die, and the active device die is encapsulated in a first space formed by the first glue and the substrate module, and the first glue is a high-temperature resistant material.

[0008] Optionally, the active device die is fixed on the substrate module by a second glue;

[0009] The active device die and the second glue are jointly encapsulated in the first space.

[0010] Optionally, the pins of the active device die are welded on the substrate module;

[0011] The pins of the active device die are also encapsulated in the first space.

[0012] Optionally, the first glue is resistant to a maximum temperature of 200-600°C.

[0013] Optionally, the first glue is a high-temperature resistant epoxy glue.

[0014] Optionally, the thickness of the resistive paste is 0.05-1mm.

[0015] Optionally, the temperature for high-temperature curing of the resistive paste is 300-900°C.

[0016] Optionally, the substrate module comprises at least one substrate layer.

[0017] Each two adjacent substrate layers are stacked with a preset distance.

[0018] Each substrate layer is provided with a plurality of wire holes for the filaments of the photomultiplier tubes to pass through, and each filament is fixedly connected to each substrate layer after passing through the wire holes at the corresponding positions of each substrate layer.

[0019] Optionally, the total thickness of the substrate module is 2-8mm.

[0020] Optionally, the shape of the cross section of the substrate module is the same as that of the cross section of the stem of the photomultiplier tube.

[0021] Optionally, the cross section of the substrate module is circular, and the diameter of the cross section is 10-24mm.

[0022] In a second aspect, a photomultiplier tube is provided, comprising the voltage dividing system as described above.

[0023] In a third aspect, a detector is provided, comprising the voltage dividing system as described above.

[0024] In the embodiment of the present application, the voltage division system comprises a substrate module, the substrate module can be provided with a resistor mounting area, a resistor paste with a preset thickness and cured at high temperature is arranged on the resistor mounting area, compared with ordinary resistors, the resistor paste can effectively reduce the volume occupied by the resistor, and the resistor paste cured at high temperature is not easily affected by high temperature and has a high-temperature-resistant effect; the substrate module can also be provided with an active device mounting area, generally, the volume of the active device is large, and the active device die is arranged on the active device mounting area instead of the complete active device with a shell, thereby effectively reducing the volume occupied by the active device; the active device die is packaged in a first space surrounded by the first adhesive and the substrate module, not only the packaging area is reduced, but also the first adhesive is a high-temperature-resistant material, and the active device die has a high-temperature-resistant effect inside the first adhesive; the voltage division system realizes the effects of small size and high temperature resistance by the unique design of the resistor and the active device, can work for a long time in a high-temperature environment above 200℃ through tests, and can effectively extend the depth of oil exploration and exploitation when applied in the field of oil exploitation. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 Fig. 1 shows a structure schematic diagram of a voltage division system provided by an embodiment of the present application;

[0026] Figure 2 Fig. 2 shows another structure schematic diagram of a voltage division system provided by an embodiment of the present application;

[0027] Figure 3 Fig. 3 shows still another structure schematic diagram of a voltage division system provided by an embodiment of the present application;

[0028] Figure 4 Fig. 4 shows a structure schematic diagram of a photomultiplier tube provided by an embodiment of the present application.

[0029] BRIEF DESCRIPTION OF DRAWINGS

[0030] 100-voltage division system; 10-substrate module; 11-resistor mounting area; 12-active device mounting area; 13-capacitor mounting area; 14-substrate; 141-wire hole; 15-tube filament; 20-resistor paste; 30-active device die; 41-first adhesive; 42-second adhesive; 50-surface mount capacitor; 200-photomultiplier tube. DETAILED DESCRIPTION

[0031] The technical solutions in the embodiments of the present application will be clearly described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present application.

[0032] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second" are generally a class, not limited to the number of objects, for example, the first object can be one or more. In addition, "and / or" in the specification and claims means at least one of the connected objects, and the character " / " generally represents a "or" relationship between the front and rear associated objects.

[0033] The voltage dividing circuit of the photomultiplier tube generally includes resistors, capacitors or resistors, capacitors, active devices, etc., which form a voltage dividing system through series or parallel connection. Each device in the voltage dividing system has a certain volume, resulting in a large overall volume of the voltage dividing system and poor temperature resistance effect.

[0034] The embodiments of the present application effectively reduce the overall volume of the voltage dividing system by improving the resistors, active devices and other devices constituting the voltage dividing system, and improve the high temperature resistance performance, which can realize normal operation in a high temperature environment above 200℃. In combination with the photomultiplier tube, the voltage dividing system can be applied to the detector to effectively extend the depth of oil exploration and exploitation.

[0035] Referring to Figures 1 to 2 The embodiments of the present application provide a voltage dividing system 100, which includes a substrate module 10, the substrate module 10 is provided with a resistor mounting area 11 and / or an active device mounting area 12;

[0036] The resistor mounting area 11 is provided with a resistor paste 20 of a predetermined thickness and high temperature curing;

[0037] The active device mounting area 12 is provided with an active device die 30, and the active device die 30 is encapsulated in a first space formed by the first glue 41 and the substrate module 10, and the first glue 41 is a high-temperature-resistant material.

[0038] The voltage dividing system 100 of the embodiments of the present application can be composed of a series of resistor devices to form a voltage dividing circuit, or can be composed of a series of resistor devices and capacitor devices to form a voltage dividing circuit, or can be composed of a series of resistor devices, capacitor devices and active devices to form a voltage dividing circuit.

[0039] The active device refers to an electronic element that needs a power supply to realize its specific function, mainly including integrated circuits, and is generally used for signal amplification, conversion, etc. The active device die refers to the bare chip left after the active device is unpacked from the original shell.

[0040] The material of the active device shell is generally a high molecular compound (commonly known as plastic), which is composed of synthetic resin and fillers, plasticizers, stabilizers and other additives. Some active devices also use metal shells, ceramic shells or glass enamel shells, and the metal shell is generally made of aluminum.

[0041] The bare chip of the active device generally includes a wafer and a jumper wire. The wafer refers to a silicon wafer used for manufacturing active devices (such as integrated circuits). Since the shape is circular, it is called a wafer. Various circuit element structures can be processed on the silicon wafer to become integrated circuit products with specific electrical functions. The jumper wire is a metal connecting wire connecting two required points on the circuit.

[0042] The voltage division system 100 of the embodiment of the present application sets the resistance paste 20 in the resistance mounting area 11 of the substrate module 10. Compared with ordinary resistance, the volume occupied by the resistance can be effectively reduced, and the resistance paste 20 is cured at high temperature, so its performance is not easily affected by high temperature and has a high-temperature-resistant effect. The active device mounting area 12 can also be set on the substrate module 10, and the active device die 30 is set in the active device mounting area 12, which effectively reduces the volume occupied by the active device. The active device die 30 is packaged in the first space surrounded by the first adhesive 41 and the substrate module 10, wherein the first adhesive 41 is a high-temperature-resistant material. This packaging structure not only reduces the packaging area, but also protects the active device die 30 from being affected in a high-temperature environment, achieving a high-temperature-resistant effect. The voltage division system 100 realizes the effects of small size and high temperature resistance by unique design of the resistance and active device. It can work for a long time in a high-temperature environment above 200℃ through tests, and can effectively extend the depth of oil exploration and exploitation when applied in the field of oil exploitation.

[0043] Optionally, the thickness of the resistance paste 20 is between 0.05mm and 1mm.

[0044] The resistance paste can be silver-palladium paste, ruthenium dioxide paste, ruthenate paste, or paste of iridium and rhodium, but is not limited thereto.

[0045] At this time, the resistance paste 20 is used to replace ordinary resistance, and the thickness can reach an extremely thin effect of between 0.05mm and 1mm, so that the volume occupied by the resistance is significantly reduced. The resistance paste 20 is cured at high temperature, so the resistance performance is not easily affected by high temperature, and the high-temperature-resistant performance of the resistance and the entire voltage division system is improved.

[0046] Optionally, the temperature for high-temperature curing of the resistance paste 20 is between 300℃ and 900℃.

[0047] At this time, the resistance paste cured at a high temperature of 300℃ to 900℃ has an excellent high-temperature-resistant effect.

[0048] Specifically, the substrate module 10 serves as a carrier, and the resistors can be first printed on the resistor mounting area 11 of the substrate module 10 in a predetermined thickness, and then cured at a high temperature to complete the manufacturing of the resistors. Since the resistors are thick film printed resistors, all the resistors can be formed at one time, thereby saving the time for welding or mounting the resistors on the circuit board, and improving the production efficiency.

[0049] Optionally, the active device die 30 is fixed on the substrate module 10 by the second adhesive 42, and the active device die 30 and the second adhesive 42 are jointly encapsulated in the first space.

[0050] At this time, the active device die 30 is first fixed on the substrate module 10 by the second adhesive 42, and then the active device die 30 and the second adhesive 42 are jointly encapsulated by the first adhesive 41. Through the cooperation of the two adhesives, the stability of the connection between the active device die 30 and the substrate module 10 can be ensured, the packaging area of the active device can be reduced, and the high-temperature resistance of the active device and the entire voltage division system can be improved.

[0051] Optionally, the pins of the active device die 30 are welded on the substrate module 10, and the pins of the active device die 30 are also encapsulated in the first space.

[0052] At this time, the pins of the active device die 30 are welded on the substrate module 10 to realize electrical connection, and the pins of the active device die 30 are also encapsulated in the first space surrounded by the first adhesive 41 and the substrate module 10, so that the active device die 30 itself and the pins are protected by the encapsulation of the first adhesive 41, and the high-temperature resistance is further improved.

[0053] Optionally, the highest temperature resistant by the first adhesive 41 is between 200℃ and 600℃.

[0054] At this time, the first adhesive 41 can be made of a material resistant to a high temperature of 200℃ to 600℃ to fully meet the requirement of high-temperature resistance.

[0055] Optionally, the first adhesive 41 is high-temperature resistant epoxy glue, but is not limited thereto. The high-temperature resistant epoxy glue is made of high-temperature resistant resin and a temperature resistant material with excellent thixotropy, and has good temperature resistance.

[0056] It should be noted that the specific components of the high-temperature resistant epoxy glue are not limited in the embodiments of the present application, and any epoxy glue capable of achieving high-temperature resistance in the prior art can be applied to the embodiments of the present application.

[0057] Optionally, the second adhesive 42 can be epoxy resin, but is not limited thereto.

[0058] At this time, the active device die 30 is fixed on the active device mounting area 12 of the substrate module 10 through epoxy resin, and the active device die 30 is packaged through high-temperature-resistant epoxy glue, so that the stability of the device can be effectively ensured, and the high-temperature resistance effect can be achieved.

[0059] The second glue 42 mainly plays a temporary fixing role and has the characteristics of fast curing time; the first glue 41 mainly plays a sealing and packaging role, has relatively slow curing time, good fluidity, and good sealing effect after gluing, and good stability at room temperature and high temperature.

[0060] It should be noted that the specific components of the epoxy resin are not limited in the embodiments of the present application, and any epoxy resin capable of achieving fixed bonding in the prior art can be applied to the embodiments of the present application.

[0061] Optionally, the substrate module 10 further comprises a capacitor mounting area 13; the capacitor mounting area 13 is provided with a patch capacitor 50, and the patch capacitor 50 and the substrate module 10 are fixedly connected through a high-temperature solder wire.

[0062] At this time, the patch capacitor 50 and the substrate module 10 are fixedly connected through the high-temperature solder wire, so that the stability of the connection is ensured, and the high-temperature resistance effect is achieved.

[0063] It should be noted that the positions and numbers of the resistor mounting area 11, the capacitor mounting area 13 and the active device mounting area 12 on the substrate module 10 are not limited in the embodiments of the present application, and can be designed according to the actual application of the voltage dividing circuit.

[0064] Optionally, the substrate module 10 comprises at least one substrate 14; every two adjacent substrates 14 are stacked with a preset distance therebetween.

[0065] At this time, the substrate module 10 can be composed of a single-layer structure of one substrate 14, as shown in FIG. 2. Figure 3 As shown in FIG. 2, the substrate 14 is provided with the resistor mounting area 11, the active device mounting area 12 and the capacitor mounting area 13, and the resistor paste 20, the active device die 30 and the patch capacitor 50 are arranged in the respective areas. The substrate module 10 can also be composed of a double-layer structure of two substrates 14, as shown in FIG. 3. Figure 1 As shown in FIG. 3, the resistors, capacitors and active devices are separately arranged on the upper and lower substrates 14. Alternatively, the substrate module 10 can also be composed of a three-layer structure of three substrates 14, or even more layers, which can be set according to requirements.

[0066] However, with a single-layer structure, all components are concentrated on a single substrate 14. This single layer requires a large number of components, which can easily lead to cable crossings and cause production difficulties. Furthermore, the denser component distribution hinders heat dissipation. Therefore, a preferred approach in this application is to use a double-layer or multi-layer structure, where the substrate module 10 comprises two or more substrates 14, with a predetermined distance between adjacent substrates 14. This disperses the components across the double-layer or multi-layer substrates 14, reducing the number of components required on each substrate 14 and making it easier to avoid cable crossings. The sparser component distribution also improves heat dissipation. Furthermore, distributing components across different substrates 14 reduces the lateral area occupied by each substrate 14, enabling applications in smaller spaces. Maintaining a certain distance between adjacent substrates 14 also prevents interference between them.

[0067] Additionally, it should be noted that when using a double-layer structure, it can be arranged according to... Figure 1 As shown, the resistive paste is placed on the upper substrate, and the capacitor and active device chip are placed on the lower substrate. However, the device distribution in this embodiment is not limited to this, and any simple modifications made according to actual conditions are within the scope of protection of this application. For example, the capacitor and active device chip are placed on the upper substrate, and the resistive paste is placed on the lower substrate, or the resistive paste and capacitor are placed on the upper substrate, and the active device chip is placed on the lower substrate, etc.

[0068] Furthermore, each substrate 14 has a plurality of wire holes 141 at corresponding positions for the wires 15 of the photomultiplier tube 200 to pass through. Each wire 15 can be fixedly connected to each substrate 14 after passing through the wire holes 141 at corresponding positions on each substrate 14 in sequence.

[0069] At this time, as Figure 4 As shown, the voltage divider system 100 and the photomultiplier tube 200 are connected by a wire 15. A wire hole 141 can be provided at a corresponding position on each substrate 14 to allow the wire 15 to pass through. Each wire 15 can pass through a wire hole 151 at a corresponding position on each substrate 14 in sequence and be fixedly connected to each substrate 14 by means of high-temperature soldering or other methods.

[0070] The position and number of through holes 141 on each substrate 14 can be designed according to the arrangement of the wires 15 of the photomultiplier tube 200, and there can be various variations. This application embodiment does not limit this. For example, as an optional implementation, multiple through holes 141 can be arranged around the periphery of each substrate 14, with the positions of the through holes 141 on each substrate 14 corresponding one-to-one, to better adapt to the photomultiplier tube 200. Moreover, the through holes 141 being located on the periphery also facilitates operations such as soldering the wires 15.

[0071] In the embodiment of the present application, the substrate 14 can be a ceramic substrate, which has the characteristic of high temperature resistance, but is not limited thereto.

[0072] As an optional embodiment, the substrate module 10 comprises a first substrate and a second substrate; the first substrate is provided with the resistance mounting area 11; the second substrate is provided with the capacitor mounting area 13 and the active device mounting area 12.

[0073] At this time, by adopting the double-layer structure design, the resistance, the capacitor and the active device are divided and mounted on the first substrate and the second substrate, which can effectively reduce the lateral area of the voltage division system 100 and realize the application design in a narrow space.

[0074] Optionally, the total thickness of the substrate module 10 is between 2mm and 8mm.

[0075] At this time, by adopting the voltage division system 100 design of the embodiment of the present application, the total thickness of the substrate module 10 can be reduced to between 2mm and 8mm, which effectively reduces the space occupied by the voltage division system 100 and makes the volume more compact.

[0076] Optionally, the shape of the cross section of the substrate module 10 is the same as that of the cross section of the stem of the photomultiplier tube 200.

[0077] The stem is located at the tail of the photomultiplier tube 200, and the stem is provided with a filament 15. As described above, the filament 15 on the stem can pass through the wire hole 141 at the corresponding position of the substrate 14 in the substrate module 10 and be fixedly connected with the substrate 14.

[0078] At this time, the cross section of the substrate module 10 (i.e. the cross section of the substrate 14) is designed to have the same shape as the cross section of the stem, so that the substrate module 10 can better adapt to the photomultiplier tube 200 in a limited space. For example, if the cross section of the stem at the tail of the photomultiplier tube 200 is circular, the substrate module 10 can also be designed to be circular, or if the cross section of the stem at the tail of the photomultiplier tube 200 is square or irregular, the substrate module 10 can also be designed to be square or irregular. In this case, the wire holes 141 on the substrate module 10 can be arranged according to the arrangement of the filament 15 on the stem, without the need to deform the filament 15 too much, so that the filament 15 can pass through the wire holes 141 on the substrate module 10 and be connected with the substrate module 10.

[0079] Optionally, the cross section of the substrate module 10 is circular, and the diameter of the cross section is between 10mm and 24mm.

[0080] At this time, the shape of the stem on the photomultiplier tube 200 can not be used as a reference, and the cross section of the substrate module 10 can be designed as a circle. Compared with a square or other special shapes, the circular design of the substrate module 10 has no extra corners, and can minimize the occupied area. Specifically, the diameter of the cross section of the circular substrate module 10 can be reduced to 10mm-24mm, which is small in size and can fully meet the needs of deep exploration in the field of oil well logging.

[0081] The embodiment of the present application provides a small and compact volume, temperature-resistant 200℃ or above voltage division system 100 used in cooperation with the high-temperature photomultiplier tube 200, which can be applied in the field of oil exploitation, and effectively extends the depth of oil exploration and exploitation. The voltage division system 100 can be applied to various high-temperature photomultiplier tubes 200, and a corresponding voltage division system 100 can be designed according to different pin arrangements.

[0082] Referring to Figure 4 The embodiment of the present application also provides a photomultiplier tube 200, which comprises the voltage division system 100 as described in the above embodiment.

[0083] It should be noted that the photomultiplier tube provided by the embodiment of the present application can realize the processes realized by the voltage division system embodiment and achieve the same technical effects. To avoid repetition, the above photomultiplier tube embodiment is not described.

[0084] The embodiment of the present application also provides a detector, which comprises the photomultiplier tube 200 as described in the above embodiment.

[0085] It should be noted that the detector provided by the embodiment of the present application can realize the processes realized by the voltage division system embodiment and achieve the same technical effects. To avoid repetition, the above detector embodiment is not described.

[0086] It should be noted that in this document, the terms "comprise", "contain" or any other variant thereof are intended to cover non-exclusive inclusion, so that the processes, methods, articles or devices comprising a series of elements not only include those elements, but also include other elements not explicitly listed or inherent to such processes, methods, articles or devices. Without more limitations, the element defined by the statement "comprises a" does not exclude the presence of another identical element in the process, method, article or device comprising the element. In addition, it should be noted that the scope of the methods and devices in the present application is not limited to the order of performing the functions as shown or discussed, but can also include performing the functions in a substantially simultaneous manner or in a reverse order, for example, the described method can be performed in an order different from the described order, and various steps can be added, omitted or combined. In addition, the features described with reference to some examples can be combined in other examples.

[0087] The embodiments of the present application are described above with reference to the accompanying drawings, but the present application is not limited to the above-described specific embodiments, and the above-described specific embodiments are merely illustrative, but not restrictive, and a person of ordinary skill in the art can make many forms under the inspiration of the present application without departing from the purpose of the present application and the scope protected by the claims.

Claims

1. A voltage dividing system, characterized by, The substrate module (10) is provided with a resistance mounting area (11) and an active device mounting area (12); the substrate module (10) comprises at least one layer of substrate (14) selected from ceramic substrate; The resistance mounting area (11) is provided with resistance paste (20) of a preset thickness and high-temperature curing; The active device mounting area (12) is provided with an active device die (30) which is encapsulated in a first space surrounded by the first adhesive (41) and the substrate module (10), and the first adhesive (41) is high-temperature resistant material; the active device die (30) refers to the bare chip left after the active device is unpacked from the original shell; The active device die (30) is fixed on the substrate module (10) by the second adhesive (42); the active device die (30) and the second adhesive (42) are jointly encapsulated in the first space; the pins of the active device die (30) are welded on the substrate module (10); the pins of the active device die (30) are also encapsulated in the first space; the second adhesive (42) is used for temporary fixing and has the characteristics of fast curing time; the first adhesive (41) is used for sealing and encapsulation and has the characteristics of slow curing time and good fluidity.

2. The voltage dividing system of claim 1, wherein, The highest temperature resistant by the first adhesive (41) is between 200℃ and 600℃.

3. The voltage dividing system of claim 1, wherein, The first adhesive (41) is high-temperature resistant epoxy adhesive.

4. The voltage dividing system of claim 1, wherein, The thickness of the resistance paste (20) is between 0.05mm and 1mm.

5. The pressure dividing system according to claim 1 or 4, characterized in that The high-temperature curing temperature of the resistance paste (20) is between 300℃ and 900℃.

6. The voltage dividing system of claim 1, wherein, Each two adjacent layers of substrate (14) are stacked with a preset distance; A plurality of wire passing holes (141) through which the filaments (15) of photomultiplier tubes (200) pass are arranged at the corresponding positions of each layer of substrate (14); each filament (15) is fixedly connected with each layer of substrate (14) after sequentially passing through the wire passing holes (141) at the corresponding positions of each layer of substrate (14).

7. The voltage dividing system according to claim 1 or 6, characterized in that The total thickness of the substrate module (10) is between 2mm and 8mm.

8. The pressure dividing system according to claim 1 or 6, characterized in that The shape of the cross section of the substrate module (10) is the same as that of the cross section of the stem of the photomultiplier tube (200).

9. The voltage dividing system of claim 1 or 6, wherein, The cross section of the substrate module (10) is circular, and the diameter of the cross section is between 10mm and 24mm.

10. A photomultiplier tube, characterized by The photomultiplier tube (200) comprises: The partial pressure system according to any one of claims 1 to 9.

11. A probe, characterized in that The photomultiplier tube (200) comprises: ​

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