Multi-wavelength LED structure and manufacturing method thereof

Abstract

A multi-wavelength LED structure (1, 2, 3, 4, 5, 6, 7, 8) and a manufacturing method thereof. The multi-wavelength LED structure (1, 2, 3, 4, 5, 6, 7, 8) includes: a first semiconductor layer (ll), a stress relief layer (12) having a V-shaped pit (l2a), a first quantum well layer (131) and a second quantum well layer (132) that are stacked from bottom to top on the sidewalls of the V-shaped pit (l2a) and the top wall of the stress relief layer (12), and a second semiconductor layer (14) located on the second quantum well layer (132). The conductivity type of the second semiconductor layer (14) is opposite to that of the first semiconductor layer (ll). The thickness of the quantum well layer grown on the sidewalls of the V-shaped pit (l2a) by epitaxial growth is less than the thickness of the quantum well layer grown on the top wall. A smaller thickness of the quantum well layer corresponds to a larger bandgap width, a shorter emission wavelength, and easier tunneling of carriers, which can improve the emission efficiency of the quantum well layer near the N-type semiconductor layer. The recombination of electron-hole pairs in different regions corresponds to different emission colors, avoiding the use of a complex drive circuit, having a long lifespan and high reliability. At the same time, it has good color rendering and the emission wavelength can be freely adjusted.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and particularly to a multi-wavelength LED structure and a manufacturing method thereof. Background Art

[0002] A light-emitting diode, abbreviated as LED, utilizes the recombination between electrons and holes to emit visible light. The two main application fields of LEDs include lighting and display. Particularly in the display field, future development trends include longer lifespan, higher image quality, and higher definition (more pixels and smaller pixel sizes). The key technology to achieve high-definition display is to realize ultra-small light-emitting pixels, which requires full-color LED light-emitting units with smaller sizes.

[0003] In the prior art, on the one hand, currently, the size of the full-color LED packaging unit is 1mm * 1mm. Three surface-mounted LED chips of red, green, and blue are encapsulated onto a PCB board through die bonding and wire bonding processes. The PCB board then leads out the electrodes of the three chips from the back through a conductive via process to form a full-color LED packaging unit. The full-color LED packaging unit is then press-bonded onto a COB flat panel through a COB (chip on board) packaging process, and a dot matrix LED display screen is formed through row and column wiring on the COB flat panel. The sizes of both the full-color LED packaging unit and the dot matrix LED display screen are relatively large, and the cost is also high.

[0004] On the other hand, the light-emitting layer in an LED is realized by using phosphors or quantum dots for wavelength conversion, such as blue LED + red and green phosphors; ultraviolet LED + blue, green, and red phosphors. The disadvantage of this method is the short lifespan and reliability problems of the phosphors or quantum dots. Therefore, there is an urgent need for an LED structure that can solve the complex driving circuit of multi-wavelength LEDs, the blue light hazard problem of ultraviolet LED + blue, green, and red phosphors, and at the same time has good color rendering and a freely adjustable emission wavelength. Summary of the Invention

[0005] The object of the present invention is to provide a multi-wavelength LED structure and a manufacturing method thereof, which have small size, low cost, long lifespan, and high reliability.

[0006] To achieve the above object, in the first aspect of the present invention, a multi-wavelength LED structure is provided, including:

[0007] A first semiconductor layer, a stress release layer located on the first semiconductor layer, and V-shaped pits are formed in the stress release layer;

[0008] The first quantum well layer and the second quantum well layer stacked on the sidewalls of the V-shaped pit and the top wall of the stress release layer from bottom to top; the second quantum well layer located on the top wall of the stress release layer is the first light-emitting region; the first quantum well layer located on the top wall of the stress release layer is the second light-emitting region; the first quantum well layer or the second quantum well layer located on the sidewalls of the V-shaped pit is the third light-emitting region;

[0009] A second semiconductor layer located on the second quantum well layer, the conductivity type of the second semiconductor layer being opposite to that of the first semiconductor layer; the electron-hole pairs of the second semiconductor layer and the first semiconductor layer recombine in the first light-emitting region, corresponding to a first emission wavelength; the electron-hole pairs of the second semiconductor layer and the first semiconductor layer recombine in the second light-emitting region, corresponding to a second emission wavelength; the electron-hole pairs of the second semiconductor layer and the first semiconductor layer recombine through the sidewalls of the V-shaped pit in the third light-emitting region, corresponding to a third emission wavelength; the first emission wavelength, the second emission wavelength, and the third emission wavelength correspond to different colors.

[0010] Optionally, the V-shaped pit penetrates through a partial thickness or the entire thickness of the stress release layer, or the V-shaped pit also partially penetrates the first semiconductor layer.

[0011] Optionally, the first quantum well layer is a multi-quantum well layer, and / or the second quantum well layer is a multi-quantum well layer.

[0012] Optionally, the conductivity type of the first semiconductor layer is N-type, the conductivity type of the second semiconductor layer is P-type, the second quantum well layer includes a second potential well layer, second barrier layers disposed on both sides of the second potential well layer, and a second anti-annihilation layer disposed between the second barrier layer adjacent to the second semiconductor layer and the second potential well layer, the conduction band energy level of the second anti-annihilation layer being higher than the conduction band energy level of the second barrier layer; and / or the first quantum well layer includes a first potential well layer, first barrier layers disposed on both sides of the first potential well layer, and a first anti-annihilation layer disposed between the first barrier layer adjacent to the second quantum well layer and the first potential well layer, the conduction band energy level of the first anti-annihilation layer being higher than the conduction band energy level of the first barrier layer.

[0013] Optionally, a third anti-annihilation layer is disposed between the first quantum well layer and the second quantum well layer, the conduction band energy level of the third anti-annihilation layer being higher than the conduction band energy level of the second barrier layer.

[0014] Optionally, the conductivity type of the first semiconductor layer is P-type, the conductivity type of the second semiconductor layer is N-type, the first quantum well layer includes a first potential well layer, first barrier layers disposed on both sides of the first potential well layer, and a first anti-annihilation layer disposed between the first barrier layer adjacent to the stress release layer and the first potential well layer, and the conduction band energy level of the first anti-annihilation layer is higher than that of the first barrier layer; and / or the second quantum well layer includes a second potential well layer, second barrier layers disposed on both sides of the second potential well layer, and a second anti-annihilation layer disposed between the second barrier layer adjacent to the first quantum well layer and the second potential well layer, and the conduction band energy level of the second anti-annihilation layer is higher than that of the second barrier layer.

[0015] Optionally, a third anti-annihilation layer is disposed between the first quantum well layer and the second quantum well layer, and the conduction band energy level of the third anti-annihilation layer is higher than that of the first barrier layer.

[0016] Optionally, the first anti-annihilation layer contacts the first potential well layer, or there is a first spacer layer between the first anti-annihilation layer and the first potential well layer; the second anti-annihilation layer contacts the second potential well layer, or there is a second spacer layer between the second anti-annihilation layer and the second potential well layer.

[0017] Optionally, the first anti-annihilation layer contains Al, and the proportion of the amount of substance of Al in the first anti-annihilation layer gradually increases from the first barrier layer to the first potential well layer; or the second anti-annihilation layer contains Al, and the proportion of the amount of substance of Al in the second anti-annihilation layer gradually increases from the second barrier layer to the second potential well layer.

[0018] Optionally, from the first barrier layer to the first potential well layer, the proportion of the amount of substance of Al in the first anti-annihilation layer increases continuously or stepwise; or from the second barrier layer to the second potential well layer, the proportion of the amount of substance of Al in the second anti-annihilation layer increases continuously or stepwise.

[0019] A second aspect of the present invention provides a method for manufacturing a multi-wavelength LED structure, including:

[0020] Epitaxially grow a stress release layer on the first semiconductor layer, and the stress release layer has V-shaped pits;

[0021] Epitaxially grow a first quantum well layer and a second quantum well layer on the sidewalls of the V-shaped pits and the top wall of the stress release layer in sequence; the second quantum well layer located on the top wall of the stress release layer is the first light-emitting region; the first quantum well layer located on the top wall of the stress release layer is the second light-emitting region; the first quantum well layer or the second quantum well layer located on the sidewalls of the V-shaped pits is the third light-emitting region;

[0022] A second semiconductor layer is epitaxially grown on the second quantum well layer, and the conductivity type of the second semiconductor layer is opposite to that of the first semiconductor layer; electron-hole pairs of the second semiconductor layer and the first semiconductor layer recombine in the first light-emitting region, corresponding to a first emission wavelength; electron-hole pairs of the second semiconductor layer and the first semiconductor layer recombine in the second light-emitting region, corresponding to a second emission wavelength; electron-hole pairs of the second semiconductor layer and the first semiconductor layer recombine through the sidewall of the V-shaped pit in the third light-emitting region, corresponding to a third emission wavelength; the first emission wavelength, the second emission wavelength, and the third emission wavelength correspond to different colors.

[0023] Optionally, the V-shaped pit penetrates a partial thickness or the entire thickness of the stress relief layer, or the V-shaped pit also partially penetrates the first semiconductor layer.

[0024] Optionally, the V-shaped pit is formed in the step of epitaxially growing the stress relief layer, or the V-shaped pit is formed by etching the stress relief layer.

[0025] Optionally, the first quantum well layer is a multiple quantum well layer, and / or the second quantum well layer is a multiple quantum well layer.

[0026] Optionally, the conductivity type of the first semiconductor layer is N-type, the conductivity type of the second semiconductor layer is P-type, the second quantum well layer includes a second potential well layer, second potential barrier layers disposed on both sides of the second potential well layer, and a second anti-annihilation layer disposed between the second potential barrier layer adjacent to the second semiconductor layer and the second potential well layer, and the conduction band energy level of the second anti-annihilation layer is higher than the conduction band energy level of the second potential barrier layer; and / or the first quantum well layer includes a first potential well layer, first potential barrier layers disposed on both sides of the first potential well layer, and a first anti-annihilation layer disposed between the first potential barrier layer adjacent to the second quantum well layer and the first potential well layer, and the conduction band energy level of the first anti-annihilation layer is higher than the conduction band energy level of the first potential barrier layer.

[0027] Optionally, a third anti-annihilation layer is disposed between the first quantum well layer and the second quantum well layer, and the conduction band energy level of the third anti-annihilation layer is higher than the conduction band energy level of the second potential barrier layer.

[0028] Optionally, the conductivity type of the first semiconductor layer is P-type, and the conductivity type of the second semiconductor layer is N-type. The first quantum well layer includes a first potential well layer, first barrier layers disposed on both sides of the first potential well layer, and a first anti-annihilation layer disposed between the first barrier layer adjacent to the stress release layer and the first potential well layer. The conduction band energy level of the first anti-annihilation layer is higher than that of the first barrier layer; and / or the second quantum well layer includes a second potential well layer, second barrier layers disposed on both sides of the second potential well layer, and a second anti-annihilation layer disposed between the second barrier layer adjacent to the first quantum well layer and the second potential well layer. The conduction band energy level of the second anti-annihilation layer is higher than that of the second barrier layer.

[0029] Optionally, a third anti-annihilation layer is disposed between the first quantum well layer and the second quantum well layer. The conduction band energy level of the third anti-annihilation layer is higher than that of the first barrier layer.

[0030] Optionally, the first anti-annihilation layer contacts the first potential well layer, or there is a first spacer layer between the first anti-annihilation layer and the first potential well layer; the second anti-annihilation layer contacts the second potential well layer, or there is a second spacer layer between the second anti-annihilation layer and the second potential well layer.

[0031] Optionally, the first anti-annihilation layer contains Al, and the proportion of the amount of substance of Al in the first anti-annihilation layer gradually increases from the first barrier layer to the first potential well layer; or the second anti-annihilation layer contains Al, and the proportion of the amount of substance of Al in the second anti-annihilation layer gradually increases from the second barrier layer to the second potential well layer.

[0032] Optionally, from the first barrier layer to the first potential well layer, the proportion of the amount of substance of Al in the first anti-annihilation layer increases continuously or in a stepwise manner; or from the second barrier layer to the second potential well layer, the proportion of the amount of substance of Al in the second anti-annihilation layer increases continuously or in a stepwise manner.

[0033] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0034] 1) The thickness of the quantum well layer grown on the sidewall of the V-shaped pit by epitaxial growth is less than that of the quantum well layer grown on the top wall. A smaller thickness of the quantum well layer corresponds to a larger bandgap width, a shorter emission wavelength, and easier carrier tunneling, which can improve the light emission efficiency of the quantum well layer closer to the N-type semiconductor layer. Therefore, the first quantum well layer and the second quantum well layer are sequentially grown by epitaxy on the sidewall of the V-shaped pit and the top wall of the stress release layer. The second quantum well layer located on the top wall of the stress release layer is the first light-emitting region, the first quantum well layer located on the top wall of the stress release layer is the second light-emitting region, and the first quantum well layer or the second quantum well layer located on the sidewall of the V-shaped pit is the third light-emitting region; the light emission wavelengths of the electron-hole pairs recombined in the first light-emitting region, recombined in the second light-emitting region, and recombined through the sidewall of the V-shaped pit in the third light-emitting region can correspond to different colors. The advantages are as follows: it is possible to avoid using a complex driving circuit, has a long lifespan and high reliability. At the same time, it has good color rendering and the emission wavelength can be freely adjusted.

[0035] 2) In an alternative solution, the conductivity type of the first semiconductor layer is N-type, the conductivity type of the second semiconductor layer is P-type. The second quantum well layer includes a second potential well layer, second barrier layers disposed on both sides of the second potential well layer, and a second anti-annihilation layer disposed between the second barrier layer adjacent to the second semiconductor layer and the second potential well layer. The conduction band energy level of the second anti-annihilation layer is higher than that of the second barrier layer; and / or the first quantum well layer includes a first potential well layer, first barrier layers disposed on both sides of the first potential well layer, and a first anti-annihilation layer disposed between the first barrier layer adjacent to the second quantum well layer and the first potential well layer. The conduction band energy level of the first anti-annihilation layer is higher than that of the first barrier layer. The first anti-annihilation layer can improve the light emission efficiency of the first quantum well layer, and the second anti-annihilation layer can improve the light emission efficiency of the second quantum well layer. Description of the Drawings

[0036] Figure 1 is a schematic cross-sectional structure diagram of a multi-wavelength LED structure according to the first embodiment of the present invention;

[0037] Figure 2 is Figure 1 a flowchart of a manufacturing method of the multi-wavelength LED structure in

[0038] Figure 3 is Figure 2 a schematic diagram of an intermediate structure corresponding to the process in

[0039] Figure 4 is a schematic cross-sectional structure diagram of a multi-wavelength LED structure according to the second embodiment of the present invention;

[0040] Figure 5 is a schematic cross-sectional structure diagram of a multi-wavelength LED structure according to the third embodiment of the present invention;

[0041] Figure 6It is a schematic cross-sectional structure diagram of a local area of the multi-wavelength LED structure according to the fourth embodiment of the present invention;

[0042] Figure 7 It is Figure 6 the energy level diagram of a first quantum well layer in

[0043] Figure 8 the energy level diagram of the first quantum well layer without the first anti-annihilation layer;

[0044] Figure 9 It is Figure 6 the energy level diagram of another first quantum well layer in

[0045] Figure 10 It is a schematic cross-sectional structure diagram of a local area of the multi-wavelength LED structure according to the fifth embodiment of the present invention;

[0046] Figure 11 It is Figure 10 the energy level diagram of the first quantum well layer in

[0047] Figure 12 It is a schematic cross-sectional structure diagram of a local area of the multi-wavelength LED structure according to the sixth embodiment of the present invention;

[0048] Figure 13 It is a schematic cross-sectional structure diagram of a local area of the multi-wavelength LED structure according to the seventh embodiment of the present invention;

[0049] Figure 14 It is a schematic cross-sectional structure diagram of the multi-wavelength LED structure according to the eighth embodiment of the present invention.

[0050] For the convenience of understanding the present invention, all the reference numerals appearing in the present invention are listed below:

[0051] The first semiconductor layer 11, the stress release layer 12

[0052] The V-shaped pit 12a, the first quantum well layer 131

[0053] The second quantum well layer 132, the first light-emitting region 13a

[0054] The second light-emitting region 13b, the third light-emitting region 13c

[0055] The first barrier layer 131a, the first well layer 131b

[0056] The first anti-annihilation layer 131c, the first spacer layer 131d

[0057] The second barrier layer 132a, the second well layer 132b

[0058] The second anti-annihilation layer 132c, the second spacer layer 132d

[0059] The third anti-annihilation layer 133, the second semiconductor layer 14

[0060] Multi-wavelength LED structures 1, 2, 3, 4, 5, 6, 7, 8 Detailed implementation manners

[0061] To make the above objects, features, and advantages of the present invention more obvious and understandable, the following detailed description of specific embodiments of the present invention is provided with reference to the accompanying drawings.

[0062] Figure 1 It is a schematic cross-sectional structure diagram of the multi-wavelength LED structure according to the first embodiment of the present invention.

[0063] Referring to Figure 1 as shown, the multi-wavelength LED structure 1 includes:

[0064] A first semiconductor layer 11, a stress release layer 12 located on the first semiconductor layer 11, and a V-shaped pit 12a is provided in the stress release layer 12 (refer to Figure 3 as shown);

[0065] A first quantum well layer 131 and a second quantum well layer 132 stacked on the sidewalls of the V-shaped pit 12a and the top wall of the stress release layer 12 from bottom to top; the second quantum well layer 132 located on the top wall of the stress release layer is the first light-emitting region 13a; the first quantum well layer 131 located on the top wall of the stress release layer is the second light-emitting region 13b; the first quantum well layer 131 or the second quantum well layer 132 located on the sidewall of the V-shaped pit is the third light-emitting region 13c;

[0066] A second semiconductor layer 14 located on the second quantum well layer 132, and the conductivity type of the second semiconductor layer 14 is opposite to that of the first semiconductor layer 11; the electron-hole pairs of the second semiconductor layer 14 and the first semiconductor layer 11 recombine in the first light-emitting region 13a, corresponding to the first emission wavelength; the electron-hole pairs of the second semiconductor layer 14 and the first semiconductor layer 11 recombine in the second light-emitting region 13b, corresponding to the second emission wavelength; the electron-hole pairs of the second semiconductor layer 14 and the first semiconductor layer 11 recombine through the sidewall of the V-shaped pit 12a in the third light-emitting region 13c, corresponding to the third emission wavelength; the first emission wavelength, the second emission wavelength, and the third emission wavelength correspond to different colors.

[0067] The materials of the first semiconductor layer 11, the stress release layer 12, and the second semiconductor layer 14 can all be III-V compounds. For example, the materials of the first semiconductor layer 11 and the second semiconductor layer 14 are GaN, and the stress release layer 12 can be a single-layer structure or a multi-layer structure. For example, the material of the single-layer structure is InGaN, and the multi-layer structure is an alternately distributed InGaN layer and GaN layer.

[0068] In this embodiment, the first semiconductor layer 11 may be an N-type semiconductor layer to provide electrons to the first quantum well layer 131 and the second quantum well layer 132. The N-type ions in the N-type semiconductor layer may be at least one of Si ions, Ge ions, Sn ions, Se ions or Te ions.

[0069] In this embodiment, the stress relaxation layer 12 may be doped with N-type ions to exhibit N-type conductivity.

[0070] The second semiconductor layer 14 may be a P-type semiconductor layer to provide holes to the first quantum well layer 131 and the second quantum well layer 132. The P-type doping ions in the P-type semiconductor layer may be at least one of Mg ions, Zn ions, Ca ions, Sr ions or Ba ions.

[0071] The first quantum well layer 131 includes a first potential well layer 131b and first potential barrier layers 131a disposed on both sides of the first potential well layer 131b. The first potential barrier layers 131a and the first potential well layer 131b may be an alternating stacked structure. The bandgap width of the first potential barrier layer 131a is greater than that of the first potential well layer 131b. For example, the material of the first potential barrier layer 131a is InxGa1-xN, the material of the first potential well layer 131b is InyGa1-yN, and x < y; or the material of the first potential barrier layer 131a is GaN, and the material of the first potential well layer 131b is InGaN. The first potential barrier layer 131a may be doped with N-type ions or may not be doped.

[0072] The bandgap width of the InxGa1-xN material changes with the change of the In component (the proportion of the amount of substance), from 0.7 eV of InN to 3.4 eV of GaN, which can cover the entire visible light spectrum. Therefore, multi-wavelength light emission from red light to blue light can be achieved through the InxGa1-xN material.

[0073] The first quantum well layer 131 may be a single quantum well structure (SQW) or a multi-quantum well structure (MQW). In the multi-quantum well structure, the components of the respective first potential barrier layers 131a may be the same to correspond to the same bandgap width; the components of the respective first potential well layers 131b may also be the same to correspond to the same bandgap width.

[0074] The second quantum well layer 132 includes a second potential well layer 132b, and second barrier layers 132a disposed on both sides of the first potential well layer 131b. The second barrier layers 132a and the second potential well layer 132b may be an alternately distributed stacked structure. The bandgap width of the second barrier layer 132a is greater than that of the second potential well layer 132b. For example, the material of the second barrier layer 132a is InsGa1-sN, the material of the second potential well layer 132b is IntGa1-tN, s < t; or the material of the second barrier layer 132a is GaN, and the material of the second potential well layer 132b is InGaN. The second barrier layer 132a may be doped with N-type ions or may not be doped.

[0075] The second quantum well layer 132 may be a single quantum well structure (SQW) or a multiple quantum well structure (MQW). In the multiple quantum well structure, the components of the respective second barrier layers 132a may be the same to correspond to the same bandgap width; the components of the respective second potential well layers 132b may also be the same to correspond to the same bandgap width.

[0076] In this embodiment, the proportion of the amount of In element in the second quantum well layer 132 may be greater than that in the first quantum well layer 131, so that the emission wavelength of the first light emitting region 13a is greater than that of the second light emitting region 13b.

[0077] In this embodiment, referring to Figure 1 As shown, the V-shaped pit 12a penetrates through a part of the thickness of the stress release layer 12. The thickness of the second quantum well layer 132 located on the sidewall of the V-shaped pit is smaller than the thickness of the second quantum well layer 132 located on the top wall. The thickness of the second barrier layer 132a / second potential well layer 132b located on the top wall may be on the order of micrometers, and the thickness of the second barrier layer 132a / second potential well layer 132b located on the sidewall of the V-shaped pit may be on the order of nanometers. Since the thickness of the second quantum well layer 132 is small, the corresponding bandgap width is large and the emission wavelength is short. Therefore, the emission wavelength of the second quantum well layer 132 located in the third light emitting region 13c is smaller than that of the second quantum well layer 132 located in the first light emitting region 13a.

[0078] The thickness of the first quantum well layer 131 located on the sidewall of the V-shaped pit is smaller than the thickness of the first quantum well layer 131 located on the top wall. The thickness of the first barrier layer 131a / first potential well layer 131b located on the top wall may be on the order of micrometers, and the thickness of the first barrier layer 131a / first potential well layer 131b located on the sidewall of the V-shaped pit may be on the order of nanometers. Since the thickness of the first quantum well layer 131 is small, the corresponding bandgap width is large and the emission wavelength is short. Therefore, the emission wavelength of the first quantum well layer 131 located in the third light emitting region 13c is smaller than that of the first quantum well layer 131 located in the second light emitting region 13b.

[0079] In addition, research shows that electron-hole pairs are prone to recombine in the quantum well layer near the P-type semiconductor layer. In this embodiment, they are prone to recombine in the second quantum well layer 132, and the luminous efficiency of the second quantum well layer 132 is higher than that of the first quantum well layer 131. Therefore, the electron-hole pairs can directly recombine in the second quantum well layer 132 located on the top wall without passing through the sidewalls of the V-shaped pit 12a. Since the thickness of the quantum well layer on the sidewall is smaller than that of the corresponding quantum well layer on the top wall, carriers are prone to tunnel in the quantum well layer on the sidewall, which can improve the luminous efficiency of the quantum well layer near the N-type semiconductor layer. In this embodiment, the electron-hole pairs recombine in the first quantum well layer 131 located on the top wall through the sidewalls of the V-shaped pit 12a, which can improve the luminous efficiency of the second light-emitting region 13b.

[0080] In other embodiments, the first semiconductor layer 11 can also be a P-type semiconductor layer to provide holes to the first quantum well layer 131 and the second quantum well layer 132. The stress relief layer 12 can be doped with P-type ions to exhibit P-type conductivity. The second semiconductor layer 14 can be an N-type semiconductor layer to provide electrons to the first quantum well layer 131 and the second quantum well layer 132. The electron-hole pairs recombine in the second quantum well layer 132 located on the top wall through the sidewalls of the V-shaped pit 12a, which can improve the luminous efficiency of the first light-emitting region 13a. In addition, the proportion of the amount of In element in the second quantum well layer 132 can be less than that in the first quantum well layer 131, so that the emission wavelength of the first light-emitting region 13a is less than that of the second light-emitting region 13b.

[0081] The first embodiment of the present invention also provides Figure 1 a manufacturing method of the multi-wavelength LED structure in Figure 2 is a flowchart of the manufacturing method. Figure 3 is Figure 2 a schematic diagram of the intermediate structure corresponding to the process in

[0082] First, referring to Figure 2 step S1 in Figure 3 and as shown in

[0083] The material of the first semiconductor layer 11 can be a group III-V compound, such as GaN.

[0084] In this embodiment, the first semiconductor layer 11 can be an N-type semiconductor layer. The N-type ions in the N-type semiconductor layer can be at least one of Si ions, Ge ions, Sn ions, Se ions or Te ions.

[0085] The stress release layer 12 can be a single-layer structure or a multi-layer structure. For example, the material of the single-layer structure is InGaN, and the multi-layer structure is an alternately distributed InGaN layer and GaN layer.

[0086] In this embodiment, the stress release layer 12 can be doped with N-type ions to exhibit N-type conductivity.

[0087] The epitaxial growth process of the stress release layer 12 can include: atomic layer deposition (ALD), or chemical vapor deposition (CVD), or molecular beam epitaxy (MBE), or plasma-enhanced chemical vapor deposition (PECVD), or low-pressure chemical vapor deposition (LPCVD), or metal-organic chemical vapor deposition (MOCVD), or a combination thereof. The N-type ions can be achieved by in-situ doping.

[0088] In this embodiment, the V-shaped pits 12a can be formed by controlling process conditions during the epitaxial growth of the stress release layer 12. For example, the epitaxial temperature is between 700 - 900 degrees, the epitaxial rate of the epitaxial material is between 0.1 um / h - 5 um / h, and the N-type ion doping concentration is controlled between 1E17 / cm3 - 1E19 / cm3, so as to form V-shaped pits 12a with controllable sizes on the upper surface of the epitaxial material. In this embodiment, referring to Figure 3 as shown, the V-shaped pits 12a penetrate through a partial thickness of the stress release layer 12.

[0089] In other embodiments, the V-shaped pits 12a can also be formed by etching the stress release layer 12.

[0090] Next, referring to Figure 2 step S2 in Figure 1 as shown, a first quantum well layer 131 and a second quantum well layer 132 are sequentially epitaxially grown on the sidewalls of the V-shaped pits 12a and the top wall of the stress release layer 12; the second quantum well layer 132 located on the top wall of the stress release layer is the first light-emitting region 13a; the first quantum well layer 131 located on the top wall of the stress release layer is the second light-emitting region 13b; the first quantum well layer 131 or the second quantum well layer 132 located on the sidewalls of the V-shaped pits is the third light-emitting region 13c.

[0091] The first quantum well layer 131 includes a first barrier layer 131a and a first well layer 131b. The first barrier layer 131a and the first well layer 131b may be an alternately distributed stacked structure. The bandgap width of the first barrier layer 131a is greater than that of the first well layer 131b. For example, the material of the first barrier layer 131a is InxGa1-xN, the material of the first well layer 131b is InyGa1-yN, and x < y; or the material of the first barrier layer 131a is GaN, and the material of the first well layer 131b is InGaN. The first barrier layer 131a may be doped with N-type ions or may not be doped.

[0092] The first quantum well layer 131 may be a single quantum well structure (SQW) or a multiple quantum well structure (MQW). In the multiple quantum well structure, the compositions of the respective first barrier layers 131a may be the same to correspond to the same bandgap width; the compositions of the respective first well layers 131b may also be the same to correspond to the same bandgap width.

[0093] The second quantum well layer 132 includes a second barrier layer 132a and a second well layer 132b. The second barrier layer 132a and the second well layer 132b may be an alternately distributed stacked structure. The bandgap width of the second barrier layer 132a is greater than that of the second well layer 132b. For example, the material of the second barrier layer 132a is InsGa1-sN, the material of the second well layer 132b is IntGa1-tN, and s < t; or the material of the second barrier layer 132a is GaN, and the material of the second well layer 132b is InGaN. The second barrier layer 132a may be doped with N-type ions or may not be doped.

[0094] The second quantum well layer 132 may be a single quantum well structure (SQW) or a multiple quantum well structure (MQW). In the multiple quantum well structure, the compositions of the respective second barrier layers 132a may be the same to correspond to the same bandgap width; the compositions of the respective second well layers 132b may also be the same to correspond to the same bandgap width.

[0095] In this embodiment, the proportion of the amount of In element in the second quantum well layer 132 may be greater than the proportion of the amount of In element in the first quantum well layer 131, so that the emission wavelength of the first light emitting region 13a is greater than the emission wavelength of the second light emitting region 13b.

[0096] The epitaxial growth process of the first quantum well layer 131 and the second quantum well layer 132 may refer to the epitaxial growth process of the stress relief layer 12.

[0097] In this embodiment, the proportion of the amount of In element in the second quantum well layer 132 may be greater than the proportion of the amount of In element in the first quantum well layer 131, so that the emission wavelength of the first light emitting region 13a is greater than the emission wavelength of the second light emitting region 13b.

[0098] After that, referring to Figure 2 step S3 in Figure 1 and as shown in

[0099] a second semiconductor layer 14 is epitaxially grown on the second quantum well layer 132. The conductivity type of the second semiconductor layer 14 is opposite to that of the first semiconductor layer 11; the electron-hole pairs of the second semiconductor layer 14 and the first semiconductor layer 11 recombine in the first light-emitting region 13a, corresponding to the first emission wavelength; the electron-hole pairs of the second semiconductor layer 14 and the first semiconductor layer 11 recombine in the second light-emitting region 13b, corresponding to the second emission wavelength; the electron-hole pairs of the second semiconductor layer 14 and the first semiconductor layer 11 recombine through the side wall of the V-shaped pit 12a in the third light-emitting region 13c, corresponding to the third emission wavelength; the first emission wavelength, the second emission wavelength, and the third emission wavelength correspond to different colors.

[0100] The epitaxial growth process of the second semiconductor layer 14 can refer to the epitaxial growth process of the stress release layer 12.

[0101] In other embodiments, the first semiconductor layer 11 can also be a P-type semiconductor layer to provide holes to the first quantum well layer 131 and the second quantum well layer 132. The stress release layer 12 can be doped with P-type ions to be P-type conductive. The second semiconductor layer 14 can be an N-type semiconductor layer to provide electrons to the first quantum well layer 131 and the second quantum well layer 132. The proportion of the amount of In element in the second quantum well layer 132 can be less than the proportion of the amount of In element in the first quantum well layer 131, so that the emission wavelength of the first light-emitting region 13a is less than the emission wavelength of the second light-emitting region 13b.

[0102] Figure 4 is a schematic cross-sectional structure diagram of the multi-wavelength LED structure according to the second embodiment of the present invention. Referring to Figure 4 as shown in

[0103] Figure 5 is a schematic cross-sectional structure diagram of the multi-wavelength LED structure according to the third embodiment of the present invention. Referring to Figure 5As shown, the multi-wavelength LED structure 3 of the third embodiment and its manufacturing method are substantially the same as the multi-wavelength LED structure 1 of the first embodiment and its manufacturing method, with the only difference being that the V-shaped pit 12a penetrates through the entire thickness of the stress release layer 12 and partially penetrates the first semiconductor layer 11.

[0104] Figure 6 is a schematic cross-sectional structure diagram of a partial region of the multi-wavelength LED structure of the fourth embodiment of the present invention. Referring to Figure 6 As shown, the multi-wavelength LED structure 4 of the fourth embodiment and its manufacturing method are substantially the same as the multi-wavelength LED structures 1, 2, and 3 of the first, second, and third embodiments and their manufacturing methods, with the only difference being that the conductivity type of the first semiconductor layer 11 is N-type, the conductivity type of the second semiconductor layer 14 is P-type, the first quantum well layer 131 further includes a first anti-annihilation layer 131c, the first anti-annihilation layer 131c is disposed between the first barrier layer 131a and the first well layer 131b adjacent to the second quantum well layer 132, and the conduction band energy level of the first anti-annihilation layer 131c is higher than the conduction band energy level of the first barrier layer 131a.

[0105] The conduction band energy level of the first anti-annihilation layer 131c being higher than the conduction band energy level of the first barrier layer 131a can reduce the probability of crossing the last first barrier layer 131a in the electron transition path, thereby increasing the probability of electrons recombining within the first quantum well layer 131 and improving the light emission efficiency of the first quantum well layer 131.

[0106] In other embodiments, the conductivity type of the first semiconductor layer 11 can be P-type, and the conductivity type of the second semiconductor layer 14 can be N-type. The first anti-annihilation layer 131c in the first quantum well layer 131 is disposed between the first barrier layer 131a and the first well layer 131b adjacent to the first semiconductor layer 11, and the conduction band energy level of the first anti-annihilation layer 131c is higher than the conduction band energy level of the first barrier layer 131a. The first anti-annihilation layer 131c can reduce the probability of crossing the last first barrier layer 131a in the electron transition path, thereby increasing the probability of electrons recombining within the first quantum well layer 131 and improving the light emission efficiency of the first quantum well layer 131.

[0107] Figure 7 is Figure 6 an energy level diagram of a first quantum well layer in Figure 8 is an energy level diagram of a first quantum well layer without a first anti-annihilation layer.

[0108] Figure 7 In, the first anti-annihilation layer 131c contacts the first well layer 131b, and the first anti-annihilation layer 131c contains Al. From the first barrier layer 131a to the first well layer 131b, the proportion of the amount of substance of Al in the first anti-annihilation layer 131c continuously increases.

[0109] The material of the first anti-annihilation layer 131c can be AlGaN, which can be doped with P-type ions or not doped. The bandgap of AlN is about 6.2 eV. Therefore, compared with Figure 8 in Figure 7 , the higher the Al component in the first anti-annihilation layer 131c, the higher the conduction band energy level of the first anti-annihilation layer 131c, and the more it can raise the conduction band energy level of the first barrier layer 131a, making the probability of electrons crossing the first barrier layer 131a smaller.

[0110] Figure 9 is Figure 6 the energy level diagram of another first quantum well layer in

[0111] Figure 9 In , the first anti-annihilation layer 131c contacts the first quantum well layer 131b, and the first anti-annihilation layer 131c contains Al. From the first barrier layer 131a to the first quantum well layer 131b, the proportion of the amount of substance of Al in the first anti-annihilation layer 131c increases step by step. Compared with Figure 8 in Figure 9 , no matter how the Al component increases, the higher the Al component, the higher the conduction band energy level of the first anti-annihilation layer 131c, and the more it can raise the conduction band energy level of the first barrier layer 131a, making the probability of electrons crossing the first barrier layer 131a smaller.

[0112] Figure 10 is a schematic cross-sectional structure diagram of a local area of the multi-wavelength LED structure according to the fifth embodiment of the present invention. Figure 11 is Figure 10 the energy level diagram of the first quantum well layer in Figure 10 Refer to Figure 11 shown in , the multi-wavelength LED structure 5 and its manufacturing method according to the fifth embodiment are substantially the same as the multi-wavelength LED structure 4 and its manufacturing method according to the fourth embodiment, except that: there is a first spacer layer 131d between the first anti-annihilation layer 131c and the first quantum well layer 131b. The proportion of the amount of substance of Al in the first spacer layer 131d is less than the proportion of the amount of substance of Al in the first anti-annihilation layer 131c.

[0113] The material of the first spacer layer 131d can be AlGaN. The thickness of the first spacer layer 131d located on the top wall can be in the nanometer range.

[0114] Figure 12 is a schematic cross-sectional structure diagram of a local area of the multi-wavelength LED structure according to the sixth embodiment of the present invention. Refer to Figure 12As shown, the multi-wavelength LED structure 6 of the sixth embodiment and its manufacturing method are substantially the same as the multi-wavelength LED structure 4 of the fourth embodiment and its manufacturing method, with the only difference being that: the conductivity type of the first semiconductor layer 11 is N-type, the conductivity type of the second semiconductor layer 14 is P-type, the second quantum well layer 132 further includes a second anti-annihilation layer 132c, the second anti-annihilation layer 132c is disposed between the second barrier layer 132a and the second well layer 132b adjacent to the second semiconductor layer 14, and the conduction band energy level of the second anti-annihilation layer 132c is higher than the conduction band energy level of the second barrier layer 132a.

[0115] The conduction band energy level of the second anti-annihilation layer 132c is higher than the conduction band energy level of the second barrier layer 132a, which can reduce the probability of crossing the last second barrier layer 132a in the electron transition path, thereby increasing the probability of electrons recombining in the second quantum well layer 132 and improving the light emission efficiency of the second quantum well layer 132.

[0116] The material of the second anti-annihilation layer 132c can be AlGaN, which can be doped with P-type ions or undoped.

[0117] In other embodiments, the conductivity type of the first semiconductor layer 11 can be P-type, and the conductivity type of the second semiconductor layer 14 can be N-type. The second anti-annihilation layer 132c is disposed between the second barrier layer 132a and the second well layer 132b adjacent to the first quantum well layer 131, and the conduction band energy level of the second anti-annihilation layer 132c is higher than the conduction band energy level of the second barrier layer 132a. The second anti-annihilation layer 132c can reduce the probability of crossing the last second barrier layer 132a in the electron transition path, thereby increasing the probability of electrons recombining in the second quantum well layer 132 and improving the light emission efficiency of the second quantum well layer 132.

[0118] And Figure 7 And Figure 9 Similarly, the second anti-annihilation layer 132c contacts the second well layer 132b, and the second anti-annihilation layer 132c contains Al. From the second barrier layer 132a to the second well layer 132b, the proportion of the amount of substance of Al in the second anti-annihilation layer 132c increases continuously or stepwise.

[0119] Figure 13 is a schematic cross-sectional structure diagram of a local area of the multi-wavelength LED structure of the seventh embodiment of the present invention. Referring to Figure 13 As shown, the multi-wavelength LED structure 7 of the seventh embodiment and its manufacturing method are substantially the same as the multi-wavelength LED structure 6 of the sixth embodiment and its manufacturing method, with the only difference being that: there is a second spacer layer 132d between the second anti-annihilation layer 132c and the second well layer 132b. The proportion of the amount of substance of Al in the second spacer layer 132d is less than the proportion of the amount of substance of Al in the second anti-annihilation layer 132c.

[0120] The material of the second spacer layer 132d can be AlGaN. The thickness of the second spacer layer 132d located on the top wall can be on the nanometer scale.

[0121] Figure 14 is a schematic cross-sectional structure diagram of a multi-wavelength LED structure according to the eighth embodiment of the present invention. Refer to Figure 14 As shown, the multi-wavelength LED structure 8 of this embodiment eight and its manufacturing method are substantially the same as those of the multi-wavelength LED structures 1, 2, 3, 4, 5, 6, 7 and their manufacturing methods of the first to seventh embodiments, except that: the conductivity type of the first semiconductor layer 11 is N-type, the conductivity type of the second semiconductor layer 14 is P-type, a third anti-annihilation layer 133 is provided between the first quantum well layer 131 and the second quantum well layer 132, and the conduction band energy level of the third anti-annihilation layer 133 is higher than that of the second barrier layer 132a. The third anti-annihilation layer 133 can reduce the probability of crossing the second barrier layer 132a in the electron transition path, thereby increasing the probability of electrons recombining in the first quantum well layer 131 and improving the light emission efficiency of the first quantum well layer 131. The proportion of the amount of substance of Al in the third anti-annihilation layer 133 is greater than the proportion of the amount of substance of Al in the second barrier layer 132a.

[0122] In other embodiments, the conductivity type of the first semiconductor layer 11 is P-type, the conductivity type of the second semiconductor layer 14 is N-type, a third anti-annihilation layer 133 is provided between the first quantum well layer 131 and the second quantum well layer 132, and the conduction band energy level of the third anti-annihilation layer 133 is higher than that of the first barrier layer 131a. The third anti-annihilation layer 133 can reduce the probability of crossing the first barrier layer 131a in the electron transition path, thereby increasing the probability of electrons recombining in the second quantum well layer 132 and improving the light emission efficiency of the second quantum well layer 132. The proportion of the amount of substance of Al in the third anti-annihilation layer 133 is greater than the proportion of the amount of substance of Al in the first barrier layer 131a.

[0123] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be determined by the scope defined by the claims.

Claims

1. A multi-wavelength LED structure, characterized in that, Comprising: A first semiconductor layer (11), a stress release layer (12) located on the first semiconductor layer (11), and a V-shaped pit (12a) is formed in the stress release layer (12); A first quantum well layer (131) and a second quantum well layer (132) stacked from bottom to top on the sidewalls of the V-shaped pit (12a) and the top wall of the stress release layer (12); the second quantum well layer (132) located on the top wall of the stress release layer is a first light-emitting region (13a); the first quantum well layer (131) located on the top wall of the stress release layer is a second light-emitting region (13b); the first quantum well layer (131) or the second quantum well layer (132) located on the sidewalls of the V-shaped pit is a third light-emitting region (13c); A second semiconductor layer (14) located on the second quantum well layer (132), and the conductivity type of the second semiconductor layer (14) is opposite to that of the first semiconductor layer (11); electron-hole pairs of the second semiconductor layer (14) and the first semiconductor layer (11) recombine in the first light-emitting region (13a), corresponding to a first emission wavelength; electron-hole pairs of the second semiconductor layer (14) and the first semiconductor layer (11) recombine in the second light-emitting region (13b), corresponding to a second emission wavelength; electron-hole pairs of the second semiconductor layer (14) and the first semiconductor layer (11) recombine through the sidewalls of the V-shaped pit (12a) in the third light-emitting region (13c), corresponding to a third emission wavelength; the first emission wavelength, the second emission wavelength, and the third emission wavelength correspond to different colors; Wherein, The conductivity type of the first semiconductor layer (11) is N-type, the conductivity type of the second semiconductor layer (14) is P-type, the second quantum well layer (132) includes a second potential well layer (132b), second potential barrier layers (132a) provided on both sides of the second potential well layer (132b), and a second anti-annihilation layer (132c) provided between the second potential barrier layer (132a) adjacent to the second semiconductor layer (14) and the second potential well layer (132b), and the conduction band energy level of the second anti-annihilation layer (132c) is higher than that of the second potential barrier layer (132a); and / or the first quantum well layer (131) includes a first potential well layer (131b), first potential barrier layers (131a) provided on both sides of the first potential well layer (131b), And a first anti-annihilation layer (131c) provided between the first potential barrier layer (131a) adjacent to the second quantum well layer (132) and the first potential well layer (131b), and the conduction band energy level of the first anti-annihilation layer (131c) is higher than that of the first potential barrier layer (131a); or ​ The conductivity type of the first semiconductor layer (11) is P-type, the conductivity type of the second semiconductor layer (14) is N-type. The first quantum well layer (131) includes a first well layer (131b), first barrier layers (131a) disposed on both sides of the first well layer (131b), and a first anti-annihilation layer (131c) disposed between the first barrier layer (131a) adjacent to the stress relaxation layer (12) and the first well layer (131b). The conduction band energy level of the first anti-annihilation layer (131c) is higher than that of the first barrier layer (131a); and / or the second quantum well layer (132) includes a second well layer (132b), second barrier layers (132a) disposed on both sides of the second well layer (132b), and a second anti-annihilation layer (132c) disposed between the second barrier layer (132a) adjacent to the first quantum well layer (131) and the second well layer (132b). The conduction band energy level of the second anti-annihilation layer (132c) is higher than that of the second barrier layer (132a). on both sides, and a second anti-annihilation layer (132c) disposed between the second barrier layer (132a) adjacent to the first quantum well layer (131) and the second well layer (132b). The conduction band energy level of the second anti-annihilation layer (132c) is higher than that of the second barrier layer (132a).

2. The multi-wavelength LED structure according to claim 1, characterized in that, The V-shaped pit (12a) penetrates through a partial thickness or the entire thickness of the stress relaxation layer (12), or the V-shaped pit (12a) also partially penetrates the first semiconductor layer (11).

3. The multi-wavelength LED structure according to claim 1, characterized in that, A third anti-annihilation layer (133) is disposed between the first quantum well layer (131) and the second quantum well layer (132). The conduction band energy level of the third anti-annihilation layer (133) is higher than that of the second barrier layer (132a).

4. The multi-wavelength LED structure according to claim 1, characterized in that, A third anti-annihilation layer (133) is disposed between the first quantum well layer (131) and the second quantum well layer (132). The conduction band energy level of the third anti-annihilation layer (133) is higher than that of the first barrier layer (131a).

5. The multi-wavelength LED structure according to claim 1, characterized in that, A first spacer layer (131d) is provided between the first anti-annihilation layer (131c) and the first well layer (131b). The molar ratio of Al in the first spacer layer (131d) is less than the molar ratio of Al in the first anti-annihilation layer (131c); and / or a second spacer layer (132d) is provided between the second anti-annihilation layer (132c) and the second well layer (132b). The molar ratio of Al in the second spacer layer (132d) is less than the molar ratio of Al in the second anti-annihilation layer (132c).

6. The multi-wavelength LED structure according to claim 1, characterized in that, The first anti-annihilation layer (131c) contains Al. From the first barrier layer (131a) to the first well layer (131b), the molar ratio of Al in the first anti-annihilation layer (131c) gradually increases; or the second anti-annihilation layer (132c) contains Al. From the second barrier layer (132a) to the second well layer (132b), the molar ratio of Al in the second anti-annihilation layer (132c) gradually increases.

7. The multi-wavelength LED structure according to claim 6, characterized in that, From the first barrier layer (131a) to the first well layer (131b), the proportion of the amount of substance of Al in the first anti-annihilation layer (131c) continuously increases or increases stepwise; or from the second barrier layer (132a) to the second well layer (132b), the proportion of the amount of substance of Al in the second anti-annihilation layer (132c) continuously increases or increases stepwise.

8. A manufacturing method of a multi-wavelength LED structure, characterized in that, Comprising: Epitaxially growing a stress relaxation layer (12) on the first semiconductor layer (11), wherein the stress relaxation layer (12) has a V-shaped pit (12a); Epitaxially growing a first quantum well layer (131) and a second quantum well layer (132) in sequence on the sidewall of the V-shaped pit (12a) and the top wall of the stress relaxation layer (12); the second quantum well layer (132) located on the top wall of the stress relaxation layer is a first light-emitting region (13a); the first quantum well layer (131) located on the top wall of the stress relaxation layer is a second light-emitting region (13b); the first quantum well layer (131) or the second quantum well layer (132) located on the sidewall of the V-shaped pit is a third light-emitting region (13c); Epitaxially growing a second semiconductor layer (14) on the second quantum well layer (132), wherein the conductivity type of the second semiconductor layer (14) is opposite to that of the first semiconductor layer (11); electron-hole pairs of the second semiconductor layer (14) and the first semiconductor layer (11) recombine in the first light-emitting region (13a), corresponding to a first emission wavelength; electron-hole pairs of the second semiconductor layer (14) and the first semiconductor layer (11) recombine in the second light-emitting region (13b), corresponding to a second emission wavelength; electron-hole pairs of the second semiconductor layer (14) and the first semiconductor layer (11) recombine through the sidewall of the V-shaped pit (12a) in the third light-emitting region (13c), corresponding to a third emission wavelength; the first emission wavelength, the second emission wavelength, and the third emission wavelength correspond to different colors; Wherein, The conductivity type of the first semiconductor layer (11) is N-type, the conductivity type of the second semiconductor layer (14) is P-type, and the second quantum well layer (132) includes a second well layer (132b), Second barrier layers (132a) disposed on both sides of the second well layer (132b), and a second anti-annihilation layer (132c) disposed between the second barrier layer (132a) and the second well layer (132b) adjacent to the second semiconductor layer (14), the conduction band energy level of the second anti-annihilation layer (132c) being higher than the conduction band energy level of the second barrier layer (132a); and / or the first quantum well layer (131) includes a first well layer (131b), first barrier layers (131a) disposed on both sides of the first well layer (131b), and a first anti-annihilation layer (131c) disposed between the first barrier layer (131a) and the first well layer (131b) adjacent to the second quantum well layer (132), the conduction band energy level of the first anti-annihilation layer (131c) being higher than the conduction band energy level of the first barrier layer (131a); or The first semiconductor layer (11) has a P-type conductivity type, the second semiconductor layer (14) has an N-type conductivity type, and the first quantum well layer (131) includes a first well layer (131b), First barrier layers (131a) disposed on both sides of the first well layer (131b), and a first anti-annihilation layer (131c) disposed between the first barrier layer (131a) and the first well layer (131b) adjacent to the stress relief layer (12), the conduction band energy level of the first anti-annihilation layer (131c) being higher than the conduction band energy level of the first barrier layer (131a); and / or the second quantum well layer (132) includes a second well layer (132b), second barrier layers (132a) disposed on both sides of the second well layer (132b), and a second anti-annihilation layer (132c) disposed between the second barrier layer (132a) and the second well layer (132b) adjacent to the first quantum well layer (131), the conduction band energy level of the second anti-annihilation layer (132c) being higher than the conduction band energy level of the second barrier layer (132a).

9. The manufacturing method of a multi-wavelength LED structure according to claim 8, characterized in that, The V-shaped pit (12a) penetrates part of the thickness or the entire thickness of the stress relief layer (12), or the V-shaped pit (12a) also partially penetrates the first semiconductor layer (11).

10. The manufacturing method of a multi-wavelength LED structure according to claim 8, characterized in that, The V-shaped pit (12a) is formed in the step of epitaxially growing the stress relief layer (12), or the V-shaped pit (12a) is formed by etching the stress relief layer (12).

11. The manufacturing method of the multi-wavelength LED structure according to claim 8, wherein, A third anti-annihilation layer (133) is disposed between the first quantum well layer (131) and the second quantum well layer (132), and the conduction band energy level of the third anti-annihilation layer (133) is higher than the conduction band energy level of the second barrier layer (132a).

12. The manufacturing method of the multi-wavelength LED structure according to claim 8, wherein, A third anti-annihilation layer (133) is disposed between the first quantum well layer (131) and the second quantum well layer (132), and the conduction band energy level of the third anti-annihilation layer (133) is higher than the conduction band energy level of the first barrier layer (131a).

13. The manufacturing method of the multi-wavelength LED structure according to claim 8, wherein, A first spacer layer (131d) is provided between the first anti-annihilation layer (131c) and the first potential well layer (131b), and the proportion of the amount of substance of Al in the first spacer layer (131d) is less than the proportion of the amount of substance of Al in the first anti-annihilation layer (131c); and / or a second spacer layer (132d) is provided between the second anti-annihilation layer (132c) and the second potential well layer (132b), and the proportion of the amount of substance of Al in the second spacer layer (132d) is less than the proportion of the amount of substance of Al in the second anti-annihilation layer (132c).

14. The manufacturing method of the multi-wavelength LED structure according to claim 8, wherein, The first anti-annihilation layer (131c) contains Al, and the proportion of the amount of substance of Al in the first anti-annihilation layer (131c) gradually increases from the first barrier layer (131a) to the first potential well layer (131b); or the second anti-annihilation layer (132c) contains Al, and the proportion of the amount of substance of Al in the second anti-annihilation layer (132c) gradually increases from the second barrier layer (132a) to the second potential well layer (132b).

15. The manufacturing method of the multi-wavelength LED structure according to claim 14, wherein, From the first barrier layer (131a) to the first potential well layer (131b), the proportion of the amount of substance of Al in the first anti-annihilation layer (131c) continuously increases or increases stepwise; or from the second barrier layer (132a) to the second potential well layer (132b), the proportion of the amount of substance of Al in the second anti-annihilation layer (132c) continuously increases or increases stepwise.

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