A voltage generation circuit, a chip, and a power battery

By introducing an adjustable resistor circuit into the voltage generation circuit, the problem of chip area increase caused by the change of power supply voltage is solved, and a low power consumption and small area design within the change range of power supply voltage is realized.

CN116400767BActive Publication Date: 2025-08-05BEIJING TSINGTENG MICROSYSTEM CO LTD
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Patent Information

Application Number
CN202310102309.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-02-13
Publication Date
2025-08-05
Estimated Expiration
2043-02-13

AI Technical Summary

Technical Problem

In the prior art, when the power supply voltage changes in a large range, it is necessary to use a resistor with a larger resistance value to increase the chip area, resulting in a larger chip volume.

Method used

An adjustable resistor circuit is adopted to adapt to the change in the power output voltage by adjusting the resistance value of the resistor, avoiding the use of large resistance resistors and reducing the chip area.

Benefits of technology

It realizes the reduction of chip area and low power consumption within the range of power supply voltage, and meets the needs of different resistance values.

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Abstract

The present application discloses a voltage generation circuit, a chip and a power battery. The voltage generation circuit includes a first voltage stabilizing element and an adjustable resistance circuit. The first end of the voltage stabilizing element is grounded; the adjustable resistance circuit is used to provide an adjustable resistance for the voltage circuit, and one end of the adjustable resistance circuit is connected to the power supply, and the other end is connected to the second end of the first voltage stabilizing element; wherein, a reference voltage output line is connected between the adjustable resistance circuit and the second end of the voltage stabilizing element, and the reference voltage output line is used to output a reference voltage. Since the voltage generation circuit includes an adjustable resistance circuit, which is used to provide an adjustable resistance for the voltage circuit, the adjustable resistance circuit can adjust the resistance value of the adjustable resistance circuit according to the change of the power supply output voltage, without the need for a large-value resistor, and the chip area can be reduced to overcome the problem that a resistor with a large resistance value has a large volume, resulting in an increase in the chip area.
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Description

Technical Field

[0001] The present application belongs to the technical field of voltage generation circuits of battery management chips, and in particular relates to a voltage generation circuit, a chip, and a power supply battery. Background Art

[0002] In chip power management, the power supply can consist of multiple batteries connected in series, and the output voltage can vary from the voltage of a single battery to the sum of the voltages of multiple batteries. If the power supply consists of a large number of batteries, the voltage range will be larger, and the circuit used to output the reference voltage will need to use a larger resistor for current limiting. For example, when the power supply output voltage is 30V and the bias current is 25nA, the minimum resistance requirement is 109 ohms. Resistors with larger resistance values are larger, resulting in increased chip area. Summary of the Invention

[0003] In order to address the deficiencies of the prior art, the present application provides a voltage generating circuit. Since the voltage generating circuit includes an adjustable resistance circuit, the adjustable resistance circuit is used to provide adjustable resistance to the voltage circuit. The adjustable resistance circuit can adjust the resistance of the adjustable resistance circuit according to changes in the power supply output voltage. Without the need for large-value resistors, the area of the chip can be reduced to overcome the problem that resistors with larger resistance values have a larger volume, resulting in an increase in the chip area.

[0004] The technical effects to be achieved by this application are achieved through the following solutions:

[0005] The present application provides a voltage generating circuit for use in a power supply battery. The power supply battery includes at least one battery connected in series, including:

[0006] a first voltage stabilizing element, wherein a first terminal of the first voltage stabilizing element is grounded;

[0007] an adjustable resistance circuit, configured to provide an adjustable resistance to the voltage generating circuit, wherein one end of the adjustable resistance circuit is connected to the power supply, and the other end is connected to the second end of the first voltage stabilizing element;

[0008] A reference voltage output line is connected between the adjustable resistance circuit and the second end of the first voltage stabilizing element, and the reference voltage output line is used to output a reference voltage.

[0009] Furthermore, the adjustable resistance circuit includes a PMOS transistor, a resistor, and a second voltage stabilizing element, wherein one end of the resistor is connected to the power supply, and the other end is connected to the source end of the PMOS transistor; a first end of the second voltage stabilizing element is connected to the power supply, and a second end of the second voltage stabilizing element is connected to the substrate of the PMOS transistor; a gate end of the PMOS transistor is short-circuited with the second end of the second voltage stabilizing element, and a drain end of the PMOS transistor is connected to the second end of the first voltage stabilizing element;

[0010] Wherein, the PMOS tube is in a subthreshold conduction state.

[0011] Furthermore, the first voltage stabilizing element is a first Zener diode, and the second voltage stabilizing element is a second Zener diode.

[0012] Furthermore, a cathode terminal of the first Zener diode is connected to the drain terminal of the PMOS transistor, and a positive terminal of the first Zener diode is grounded.

[0013] Furthermore, a cathode terminal of the second Zener diode is connected to the power supply, and a positive terminal of the second Zener diode is connected to the gate terminal and substrate of the PMOS transistor.

[0014] Furthermore, the current variation range of the voltage generating circuit is 10nA to 18nA.

[0015] The present application provides a chip, comprising any voltage generating circuit as described above.

[0016] The present application provides a power supply battery, comprising at least one battery connected in series, and a chip as described above.

[0017] Furthermore, the number of the batteries is 1-16.

[0018] Furthermore, the voltage of the battery is 2V.

[0019] Furthermore, the voltage variation range of the power supply is 2V-30V.

[0020] This application has the following advantages:

[0021] A voltage generation circuit of the present application includes a first voltage regulating element and an adjustable resistance circuit. The first end of the voltage regulating element is grounded; the adjustable resistance circuit is used to provide an adjustable resistance for the voltage circuit, and one end of the adjustable resistance circuit is connected to the power supply, and the other end is connected to the second end of the first voltage regulating element; wherein, a reference voltage output line is connected between the adjustable resistance circuit and the second end of the voltage regulating element, and the reference voltage output line is used to output a reference voltage. Since the voltage generation circuit includes an adjustable resistance circuit, the adjustable resistance circuit is used to provide an adjustable resistance for the voltage circuit. Furthermore, the adjustable resistance circuit can adjust the resistance value of the adjustable resistance circuit according to the change of the output voltage of the power supply, without the need for a large-value resistor, which can reduce the area of the chip to overcome the problem that the large-size resistor has a large volume and increases the chip area. Brief Description of the Drawings

[0022] In order to more clearly illustrate the embodiments of the present application or the existing technical solutions, the following will briefly introduce the drawings required for the description of the embodiments or the existing technical solutions. Obviously, the drawings described below are only some embodiments recorded in the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0023] Figure 1 It is a schematic structural diagram of the voltage generation circuit of the related technology in the present application;

[0024] Figure 2 It is a schematic structural diagram of the voltage generation circuit according to an embodiment of the present application.

[0025] Explanation of the reference symbols in the drawings: 1. First voltage regulating element; 2. Adjustable resistance circuit; 3. Reference voltage output line. Detailed Embodiments

[0026] To make the purpose, technical solutions and advantages of the present application clearer, the following will clearly and completely describe the technical solutions of the present application in combination with specific embodiments and the corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.

[0027] As shown in the appendix Figure 1As shown, it is a voltage generation circuit in the related art. The voltage generation circuit includes a power supply, a resistor R1`, and a Zener diode D1`. The power supply is used to provide a power supply voltage. The resistor R1` and the Zener diode D1` are connected in series to form a voltage division branch. One end of the resistor R1` is connected to the power supply, and the other end is connected to the Zener diode D1`. A reference voltage output line is led out between the resistor R1` and the Zener diode D1` for outputting a reference voltage.

[0028] The working principle of this voltage generation circuit is as follows: The resistor R1` serves as a current-limiting component, and the Zener diode D1` serves as a voltage-regulating component. When the power supply voltage changes, the current of the resistor R1` changes accordingly, but the voltage across the Zener diode D1` remains basically constant. However, when the resistor R1` is designed with low power consumption and the power supply voltage changes greatly, the resistance value requirement is very large, resulting in an increase in the chip area. For example, when the power supply voltage VCC` is 30V and the bias current is 25nA, the resistor R1` is required to be 109 ohms. Such a large resistance value makes its volume large, causing the chip area and volume of the chip containing this voltage generation circuit to be large.

[0029] Based on the problems of the above related art, the present application proposes a voltage generation circuit, as shown in the attached Figure 2 As shown, it is a schematic structural diagram of the voltage generation circuit in an embodiment of the present application. The voltage generation circuit is applied to a power battery, and the power battery includes at least one battery connected in series. From the attached Figure 2 It can be seen that the voltage generation circuit includes a first voltage-regulating component 1 and an adjustable resistor circuit 2.

[0030] Specifically, a first voltage-regulating component 1, the first end of the first voltage-regulating component 1 is grounded; an adjustable resistor circuit 2 is used to provide an adjustable resistance for the voltage generation circuit, and one end of the adjustable resistor circuit 2 is connected to the power supply VCC, and the other end is connected to the second end of the first voltage-regulating component 1; wherein, a reference voltage output line 3 is connected between the adjustable resistor circuit 2 and the second end of the first voltage-regulating component 1, and the reference voltage output line 3 is used to output a reference voltage. Since the voltage generation circuit includes an adjustable resistor circuit 2, the adjustable resistor circuit 2 is used to provide an adjustable resistance for the voltage generation circuit. Furthermore, the adjustable resistor circuit 2 can adjust the resistance value of the adjustable resistor circuit 2 according to the change of the power supply output voltage, without the need for a large resistance value resistor, which can reduce the chip area to overcome the problem that a resistor with a large resistance value has a large volume and causes an increase in the chip area.

[0031] Specifically, the adjustable resistance circuit 2 includes a PMOS transistor M1, a resistor R1, and a second voltage stabilizing element. One end of the resistor R1 is connected to the power supply VCC, and the other end is connected to the source terminal S of the PMOS transistor M1. The first end of the second voltage stabilizing element is connected to the power supply VCC, and the second end is connected to the substrate B of the PMOS transistor M1. The gate terminal G of the PMOS transistor M1 is short-circuited to the second end of the second voltage stabilizing element, and the drain terminal D of the PMOS transistor M1 is connected to the second end of the first voltage stabilizing element 1. The conduction current can be controlled by adjusting the aspect ratio of the PMOS transistor M1.

[0032] Further, the first voltage stabilizing element is a first Zener diode D1, and the second voltage stabilizing element is a second Zener diode D2, which has a good voltage stabilizing effect.

[0033] In an embodiment, the negative terminal of the first Zener diode D1 is connected to the drain terminal D of the PMOS transistor M1, and the positive terminal of the first Zener diode D1 is grounded.

[0034] Similarly, the negative terminal of the second Zener diode D2 is connected to the power supply VCC, and the positive terminal of the second Zener diode D2 is connected to the gate terminal G and the substrate B of the PMOS transistor M1.

[0035] As described above, the drain terminal D of the PMOS transistor M1 is reversely connected in series with a first Zener diode D1, and the N-well of the PMOS transistor is reversely connected in series with a second Zener diode D2. The gate terminal and the N-well of the PMOS transistor M1 will be biased at a potential slightly lower than that of the source terminal S of the PMOS transistor M1, so that the PMOS transistor M1 is in the sub-threshold conduction state, and the on-current can be controlled by adjusting the aspect ratio of the PMOS transistor M1 to achieve a large resistance. In one example, due to the presence of the second Zener diode D2, the voltage at the positive terminal of the second Zener diode D2 is lower than the power supply voltage. Due to the presence of the resistor R1, finally, it is ensured that the voltage at the gate terminal G of the PMOS transistor M1 is slightly lower than the voltage at the source terminal S, and the absolute value of the voltage difference between the two is less than the absolute value of the threshold voltage. At this time, the PMOS transistor M1 is in the sub-threshold conduction state. The current in the sub-threshold region is small and is mainly affected by the voltage difference between the gate terminal G and the source terminal S, and is less affected by the voltage difference between the source terminal S and the drain terminal D. Therefore, the resistance of the source terminal S is large. The voltage difference between the gate terminal G and the source terminal S changes little. When the power supply voltage increases, the equivalent resistance of the source terminal S increases, that is, the source terminal S is equivalent to a variable resistor. The sub-threshold leakage is small, and the current fluctuates little when the power supply voltage changes from 2V to 30V, finally meeting the requirement of low power consumption. That is, in this embodiment of the present invention, the PMOS transistor M1 with sub-threshold biasing is used to achieve a large resistance, greatly saving the chip area, and the on-resistance can be adjusted to meet the requirements of different resistance values. In the voltage generation circuit of this embodiment, when the power supply voltage changes from 2V to 30V, the change range of the current is from 10nA to 18nA, which can achieve low power consumption and also achieve a small area.

[0036] The present application also provides a chip, which includes the voltage generation circuit as described above, and the intelligent direction control device as described above is provided on the vehicle. The specific structure of the intelligent direction control device refers to the above-mentioned implementation manner. Since this vehicle adopts all the technical solutions of the above-mentioned all implementation manners, it has at least all the beneficial effects brought by the technical solutions of the above-mentioned implementation manners, and will not be elaborated here one by one.

[0037] The present application also provides a power battery, which includes at least one battery connected in series, and the chip as described above. The number of batteries is 1-16. The power battery includes the chip as described above, and the chip as described above is provided on the power battery. The specific structure of the chip refers to the above-mentioned implementation manner. Since this vehicle adopts all the technical solutions of the above-mentioned all implementation manners, it has at least all the beneficial effects brought by the technical solutions of the above-mentioned implementation manners, and will not be elaborated here one by one.

[0038] The chip is used to manage and / or control the power supply voltage, such as voltage output, voltage output, etc.

[0039] Specifically, the voltage of the battery is 2V.

[0040] The voltage change range of the power supply is 2V - 30V. When the output voltage of the power supply battery changes from 2V to 30V, the power consumption changes by 10nA. The reference voltage follows the output voltage of the battery when the output voltage of the battery is lower than 5V, and remains at 5V when the output voltage of the battery is higher than 5V. At the same time, no other resistors are used, saving the volume and / or area of the chip.

[0041] Each embodiment in this application is described in a progressive manner. For the same or similar parts among the embodiments, reference can be made to each other. The key point of each embodiment is to illustrate the differences from other embodiments. In particular, for the device embodiments, since they are basically similar to the method embodiments, the description is relatively simple. For the relevant parts, reference can be made to the partial description of the method embodiments.

[0042] It should also be noted that the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or further includes elements inherent to such process, method, commodity or device. Without further limitations, the element defined by the statement "including one..." does not exclude the existence of additional identical elements in the process, method, commodity or device including the said element.

[0043] The above description is only for the embodiments of this application and is not intended to limit this application. For those skilled in the art, various modifications and changes can be made to this application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this application shall be included within the scope of the claims of this application.

Claims

1. A voltage generating circuit, applied to a power battery, wherein the power battery comprises at least one battery connected in series, characterized in that: include: a first voltage stabilizing element, wherein a first terminal of the first voltage stabilizing element is grounded; an adjustable resistance circuit, configured to provide an adjustable resistance to the voltage generating circuit, wherein one end of the adjustable resistance circuit is connected to the power supply, and the other end is connected to the second end of the first voltage stabilizing element; The adjustable resistor circuit can adjust the resistance of the adjustable resistor circuit according to changes in the output voltage of the power supply. The adjustable resistor circuit includes a PMOS transistor, a resistor, and a second voltage-stabilizing element. One end of the resistor is connected to the power supply, and the other end is connected to the source end of the PMOS transistor. A first end of the second voltage-stabilizing element is connected to the power supply, and a second end of the second voltage-stabilizing element is connected to the substrate of the PMOS transistor. The gate end of the PMOS transistor is short-circuited to the second end of the second voltage-stabilizing element, and the drain end of the PMOS transistor is connected to the second end of the first voltage-stabilizing element. The PMOS transistor is in a subthreshold conduction state, and the on-state current can be controlled by adjusting the width-to-length ratio of the PMOS transistor to adjust the on-state resistance. A reference voltage output line is connected between the adjustable resistance circuit and the second end of the first voltage stabilizing element, and the reference voltage output line is used to output a reference voltage.

2. The voltage generating circuit according to claim 1, wherein: The first voltage stabilizing element is a first Zener diode, and the second voltage stabilizing element is a second Zener diode.

3. The voltage generating circuit according to claim 2, wherein: The cathode terminal of the first Zener diode is connected to the drain terminal of the PMOS tube, and the anode terminal of the first Zener diode is grounded.

4. The voltage generating circuit according to claim 3, wherein: The cathode terminal of the second Zener diode is connected to the power supply, and the anode terminal of the second Zener diode is connected to the gate terminal and substrate of the PMOS tube.

5. The voltage generating circuit according to claim 3, wherein: The current variation range of the voltage generating circuit is 10nA to 18nA.

6. A chip, characterized in that: The device comprises a voltage generating circuit as described in any one of claims 1 to 5.

7. A power battery, characterized in that: The chip comprises at least one battery connected in series, and the chip as claimed in claim 6, wherein the number of the batteries is 1-16.

8. The power supply battery according to claim 7, wherein: The voltage of the battery is 2V.

9. The power battery according to claim 7, wherein: The voltage variation range of the power supply is 2V-30V.

Citation Information

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