Carrying device for test analysis and method for forming same, test analysis method

Abstract

The present disclosure relates to a carrier device for testing analysis and a forming method thereof, and a testing analysis method. The carrier device for testing analysis comprises a substrate having a through hole penetrating through the substrate along a first direction perpendicular to a top surface of the substrate; and a support layer on the top surface of the substrate for carrying a film layer to be tested, wherein a sample signal generated by the film layer to be tested can pass through the support layer and the through hole, and the substrate can shield the sample signal. The present disclosure simplifies the operation of testing analysis of the film layer to be tested, improves the efficiency of the analysis of the film layer to be tested, and can realize the characterization of the film layer to be tested with sub-nanometer thickness.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor testing technology, and in particular to a carrier device for testing and analysis, a method for forming the same, and a testing and analysis method. Background Technology

[0002] In integrated circuit manufacturing, the fabrication and characterization of thin films of various sizes and / or materials are required to test their performance and provide a reference for improving integrated circuit processes. The development of microelectronics and deep submicron chip technology demands continuously decreasing the size of semiconductor devices while increasing their aspect ratios, leading to a reduction in the thickness of the materials forming these devices to the order of a few nanometers. Atomic layer deposition (ALD) technology, due to its highly controllable deposition parameters (e.g., thickness, composition, and structure), excellent deposition uniformity, and thickness consistency, has broad application potential in various fields such as semiconductor devices, optical devices, biomaterials, and micro / nanostructure electromechanical systems. ALD structures are formed layer by layer on the substrate surface in the form of single-atom-layer films, creating sub-nanometer-thickness films. ALD processes can even fabricate single-atom-layer films. However, because the films formed by ALD are at the sub-nanometer scale, powder preparation and wafer preparation are not feasible, thus hindering the characterization of sub-nanometer-thickness films. This ultimately limits the improvement of semiconductor manufacturing processes and further increases in semiconductor manufacturing yield. In addition, for thicker films, powder preparation or tablet preparation is often required before testing and analysis, which is cumbersome and reduces the efficiency of film testing and analysis.

[0003] Therefore, simplifying the testing and analysis of thin films, improving the efficiency of thin film characterization, and achieving the characterization of thinner films (e.g., sub-nanometer thickness films) to provide a reference for improving semiconductor manufacturing processes and increasing semiconductor manufacturing yield are urgent technical problems to be solved. Summary of the Invention

[0004] This disclosure provides, in some embodiments, a support device for testing and analysis, and a method for forming the same, as well as a testing and analysis method. These methods simplify the operation of testing and analyzing thin films and enable the analysis and characterization of thin films, providing a reference for improving semiconductor manufacturing processes and increasing semiconductor manufacturing yield.

[0005] According to some embodiments, this disclosure provides a support device for test analysis, comprising:

[0006] A substrate having a through hole extending through the substrate along a first direction perpendicular to the top surface of the substrate;

[0007] A support layer is located on the top surface of the substrate and is used to support the test film layer. The sample signal generated by the test film layer can pass through the support layer and the through hole, and the substrate can shield the sample signal.

[0008] In some embodiments, the film layer to be tested has a sub-nanometer thickness, and the pore size of the via is nanometer or micrometer.

[0009] In some embodiments, the substrate further has a plurality of openings spaced apart along a second direction, the openings extending from the bottom surface of the substrate to the top surface of the substrate, the bottom surface of the substrate and the top surface of the substrate being distributed opposite to each other along the first direction, and the second direction being parallel to the top surface of the substrate;

[0010] The end of the opening facing the support layer has a plurality of through holes spaced apart along the second direction and communicating with the opening.

[0011] In some embodiments, there are multiple substrates, and the multiple support layers are distributed on the multiple substrates;

[0012] The plurality of substrates are arranged at intervals along the first direction, and the through holes in any two adjacent substrates are aligned and arranged along the first direction.

[0013] In some embodiments, it also includes:

[0014] A stage box having a receiving cavity, wherein a plurality of said substrates arranged in alignment along the first direction are located inside the receiving cavity.

[0015] According to other embodiments, this disclosure also provides a method for forming a support device for testing and analysis, comprising the following steps:

[0016] A substrate and a support layer on the top surface of the substrate are formed, the support layer being used to support the film layer to be tested;

[0017] A through-hole is formed in the substrate along a first direction, through which the sample signal generated by the film to be tested can pass through the support layer and the through-hole, and the substrate can shield the sample signal, wherein the first direction is perpendicular to the top surface of the substrate.

[0018] In some embodiments, the substrate further includes a bottom surface of the substrate opposite to the top surface of the substrate along the first direction; the specific steps of forming a through hole in the substrate along the first direction include:

[0019] The substrate is etched from the bottom surface of the substrate using at least one focused ion beam etching process to form the through-hole with a pore size of nanometer or micrometer.

[0020] In some embodiments, the specific steps of etching the substrate from its bottom surface using at least one focused ion beam etching process include:

[0021] An opening is formed in the substrate, extending from the bottom surface of the substrate to the top surface of the substrate;

[0022] The substrate at the bottom of the opening is etched along the opening using a first focused ion beam etching process to form a first through hole;

[0023] The substrate at the bottom of the first via is etched along the first via using a second focused ion beam etching process to form a second via exposing the support layer. The diameter of the second via is smaller than that of the first via. The first via and the second via connected to it together constitute the via.

[0024] In some embodiments, the electron microscope magnification of the first focused ion beam etching process is less than that of the second focused ion beam etching process, and the etching voltage of the first focused ion beam etching process is greater than that of the second focused ion beam etching process.

[0025] According to some other embodiments, this disclosure also provides a test analysis method, including the following steps:

[0026] Provide a support device for testing and analysis as described above, wherein the aperture of the through hole is in the nanometer or micrometer range;

[0027] A test film with a sub-nanometer thickness is grown directly on the surface of the support layer using atomic layer deposition (ALD) technology.

[0028] The test signal is transmitted to the film layer under test, and the sample signal generated by the film layer under test is received from the bottom of the through hole. The bottom of the through hole is opposite to the top of the through hole along the first direction, and the top of the through hole faces the support layer.

[0029] This disclosure provides a carrier device and its formation method for testing and analysis, along with testing and analysis methods, through the formation of a substrate with through-holes and the provision of a support layer on the surface of the substrate for supporting the film under test. The sample signal generated by the film under test can pass through the support layer and the through-holes, while the substrate can block the sample signal. This allows the sample signal to be received from the side of the through-holes away from the support layer, thereby enabling testing and analysis of the film under test. This simplifies the testing and analysis operation and improves the efficiency of the analysis. In some embodiments of this disclosure, the aperture of the through-holes can be set to the micrometer or nanometer level, enabling testing and analysis of the film under test with a sub-nanometer thickness. This achieves characterization of the film under test with a sub-nanometer thickness, providing a reference for improving semiconductor manufacturing processes and increasing semiconductor manufacturing yield. Attached Figure Description

[0030] Appendix Figure 1 This is a schematic diagram of the structure of the support device for testing and analysis in a specific embodiment of this disclosure;

[0031] Appendix Figure 2 It is attached Figure 1 Enlarged cross-section view of the area within the dashed box;

[0032] Appendix Figure 3 It is attached Figure 1 A top-view diagram of the area within the dashed box;

[0033] Appendix Figure 4 It is attached Figure 1 A bottom-view diagram showing the area within the dashed box.

[0034] Appendix Figure 5 This is a schematic diagram of the arrangement of multiple substrates within the support device used for testing and analysis in a specific embodiment of this disclosure;

[0035] Appendix Figure 6a - Appendix Figure 6b This is a schematic diagram of the structure of the platform box in a specific embodiment of this disclosure;

[0036] Appendix Figure 7 This is a flowchart of the method for forming the bearing device used for testing and analysis in a specific implementation of this disclosure;

[0037] Appendix Figure 8 - Appendix Figure 13 This is a schematic diagram of the main process structure in the formation of the support device for testing and analysis according to a specific embodiment of this disclosure.

[0038] Appendix Figure 14 This is a flowchart of the test and analysis method in a specific embodiment of this disclosure. Detailed Implementation

[0039] The following detailed description, with reference to the accompanying drawings, describes the specific implementation of the support device for testing and analysis, its formation method, and the testing and analysis method provided in this disclosure.

[0040] This specific embodiment provides a support device for testing and analysis, with attachments. Figure 1 This is a schematic diagram of the structure of the support device for testing and analysis according to a specific embodiment of this disclosure, attached. Figure 2 It is attached Figure 1 Enlarged cross-sectional view of the area within the dashed box (see attached diagram). Figure 3 It is attached Figure 1 A top-view diagram of the area within the dashed box, with attached. Figure 4 It is attached Figure 1 A bottom-view diagram showing the area within the dashed box. (See diagram below.) Figures 1-4 As shown, the support device for testing and analysis includes:

[0041] A substrate 10 having a through hole 13 extending through the substrate 10 along a first direction perpendicular to the top surface of the substrate 10;

[0042] A support layer 11 is located on the top surface of the substrate 10 and is used to support the test film layer 12. The sample signal generated by the test film layer 12 can pass through the support layer 11 and the through hole 13, and the substrate 10 can shield the sample signal.

[0043] Specifically, the substrate 10 can be a single-layer structure or include multiple semiconductor layers stacked along the first direction. In one example, to further simplify the structure of the support device for testing and analysis, the substrate 10 is a single-layer structure, and the material of the substrate 10 is silicon. In other examples, the material of the single-layer substrate 10 can also be other semiconductor materials, such as gallium nitride, gallium arsenide, gallium carbide, silicon carbide, or SOI. The substrate 10 includes a top surface and a bottom surface of the substrate 10 that are relatively distributed along the first direction, and the support layer 11 includes a bottom surface and a top surface of the support layer 11 that are relatively distributed along the first direction. In one example, the bottom surface of the support layer 11 directly covers the top surface of the substrate 10. In one example, the via 13 penetrates the substrate 10 along the first direction and exposes the bottom surface of the support layer 11 to avoid damage to the support layer 11 and ensure that the support layer 11 can stably support the subsequently formed test film layer 12. In another example, the via 13 penetrates the substrate 10 along the first direction and extends into the interior of the support layer 11. This reduces the thickness of the support layer 11 at the location corresponding to the via 13, thereby reducing sample signal loss and further improving the accuracy and reliability of the analysis of the film layer under test. In one example, the first direction is... Figure 1 and Figure 2 The Z-axis direction in the equation.

[0044] The testing and analysis support device provided in this specific embodiment, during the testing and analysis of the film layer 12 under test, measures the test signal (…). Figure 1 The solid arrow in the diagram indicates the direction of test signal transmission. After the test signal is transmitted to the test film 12, it excites the test film 12 to generate the sample signal. The sample signal ( Figure 1The dashed arrow (indicated by the direction of sample signal transmission) passes through the support layer 11 and the through-hole 13 and exits the substrate 10. By analyzing the sample signal, the characterization of the test film 12 can be achieved. Using the carrier device for testing and analysis provided in this specific embodiment to test and analyze the test film 12 has several advantages. First, the test film 12 can be directly deposited on the surface of the support layer 11 (e.g., the top surface of the support layer 11), eliminating the need for powder preparation or pellet preparation, simplifying the characterization process and improving the efficiency of the test film analysis. Second, the carrier device for testing and analysis is not limited by the thickness of the test film 12, enabling the testing and analysis of thinner (e.g., sub-nanometer thickness) test films 12, providing a reference for improving semiconductor manufacturing processes and increasing semiconductor manufacturing yield. The test and analysis described in this specific embodiment may be XRD (X-Ray Diffraction) analysis, EPR (Electron Paramagnetic Resonance) analysis, Raman analysis, EXAFS (Extended X-ray Absorption Fine Structure) analysis, etc.

[0045] In some embodiments, the test film 12 has a sub-nanometer thickness, and the pore size D2 of the via 13 is in the nanometer or micrometer range. For example, when the pore size D2 of the via 13 is in the nanometer or micrometer range, the test film 12 with a sub-nanometer thickness can be directly deposited on the surface of the support layer 11 using methods such as atomic layer deposition, thereby achieving characterization of the test film with a sub-nanometer thickness. In this specific embodiment, sub-nanometer thickness refers to a thickness range of less than or equal to 10 nanometers. In this specific embodiment, nanometer refers to a range greater than or equal to 1 nanometer and less than 1 micrometer. In this specific embodiment, micrometer refers to a range greater than or equal to 1 micrometer and less than 500 micrometers.

[0046] In other embodiments, the test film 12 may also have a thickness of nanometer or micrometer, and the pore size D2 of the through hole 13 is nanometer or micrometer.

[0047] In some embodiments, the through-hole 13 includes a top facing the support layer 11 and a bottom opposite the top along the first direction;

[0048] At least the diameter of the top of the through hole 13 is 0.5 μm to 100 μm.

[0049] For example, the through hole 13 extends along the first direction, and the diameter of the through hole 13 gradually increases from the bottom to the top of the through hole 13, with at least the diameter of the end of the through hole 13 that contacts the support layer 11 being 0.5 μm to 100 μm. As another example, the through hole 13 extends along the first direction, and the diameter of the through hole 13 is uniformly distributed from the bottom to the top of the through hole 13, with the diameter of the through hole 13 being 0.5 μm to 100 μm.

[0050] In some embodiments, the substrate 10 further has a plurality of openings 14 spaced apart along a second direction, the openings 14 extending from the bottom surface of the substrate 10 to the top surface of the substrate 10, the bottom surface of the substrate 10 and the top surface of the substrate 10 being distributed opposite to each other along the first direction, and the second direction being parallel to the top surface of the substrate 10.

[0051] The end of the opening 14 facing the support layer 11 has a plurality of through holes 13 spaced apart along the second direction and communicating with the opening 14. In one example, the inner diameter D1 of the opening 14 is 0.5cm to 2cm. The shape of the orthographic projection of the opening 14 onto the top surface of the substrate 10 can be rectangular, circular, or polygonal to accommodate the need for different sizes and numbers of through holes 13.

[0052] For example, such as Figure 1 , Figure 2 and Figure 4 As shown, the substrate 10 includes a plurality of openings 14 arranged in an array along the second direction and the third direction, each opening 14 not penetrating the substrate 10 along the first direction. Each opening 14 has a plurality of through holes 13 arranged in an array along the second direction and the third direction and communicating with the opening at its end facing the support layer 11. By providing a plurality of openings 14 and through holes 13 in the substrate 10, multiple regions of the test film 12 supported by the support layer 11 can be analyzed and characterized, thereby further improving the accuracy and reliability of the analysis and testing of the test film 12. The third direction is parallel to the top surface of the substrate 10, and intersects the second direction (e.g., obliquely or perpendicularly). In one example, the second direction can be... Figures 1-4 The X-axis direction in the middle, the third direction is Figures 3-4 The Y-axis direction in the diagram. In one example, the diameters of the multiple through holes 13 connected to the same opening 14 are all equal to further improve the effectiveness of the test analysis.

[0053] Appendix Figure 5This is a schematic diagram of the arrangement of multiple substrates within a support device used for testing and analysis in a specific embodiment of this disclosure. In some embodiments, such as Figure 5 As shown, there are multiple bases 10, and multiple support layers 11 are distributed on multiple bases 10;

[0054] The plurality of substrates 10 are arranged at intervals along the first direction, and the through holes 13 in any two adjacent substrates 10 are aligned and arranged along the first direction.

[0055] Specifically, the support device for testing and analysis includes multiple substrates 10, each substrate 10 having a support layer 11 disposed on its top surface. By providing multiple substrates 10, a thin (e.g., sub-nanometer thickness) film layer 12 to be tested can be deposited on the surface of the support layer 11 on each substrate 10. During testing and analysis, the multiple substrates 10 are arranged at intervals along the first direction, and the multiple film layers 12 to be tested are also arranged at intervals along the first direction. Because the vias 13 in the multiple substrates 10 are aligned and arranged along the first direction, the test signal (for testing and analyzing the film layer 12) is generated. Figure 5 The solid arrows (indicating the transmission direction of the test signal) can sequentially transmit the test signal to the test film 12 on the surface of the multiple support layers 11 through the multiple through-holes 13 aligned along the first direction. The sample signal excited in the multiple test film 12 is also transmitted along the multiple through-holes 13 aligned along the first direction. On the one hand, this can increase the intensity of the total sample signal (i.e., the sum of the sample signals generated by all the test film 12 spaced apart along the first direction) and avoid the sample signal generated by a single test film 12 being too low (e.g., below the sample signal detection level). This addresses the problem of the analyzer's detection limit being insufficient to accurately characterize the film layer 12 under test, thus improving the detection sensitivity and reliability for testing and analyzing the film layer 12 under test. On the other hand, by controlling the number of multiple substrates 10 spaced apart along the first direction, the total thickness of the film layer 12 under test (the total thickness of the film layer 12 under test is the sum of the thicknesses of the film layers 12 on all the support layers 11 spaced apart along the first direction) can be controlled, thereby enabling the analysis and testing of film layers 12 with different thicknesses and improving the flexibility of film layer testing and analysis.

[0056] During the testing and analysis of the test film 12, the number of substrates 10 arranged at intervals along the first direction can be 2 to 10. This avoids the problem that the sample signal generated by a single test film 12 is too low (e.g., below the detection limit of the sample signal detection analyzer) and thus cannot be accurately characterized, while also avoiding the problem that the total sample signal is too high (e.g., above the detection limit of the sample signal detection analyzer) and cannot be processed.

[0057] Appendix Figure 6a - Appendix Figure 6b This is a schematic diagram of the structure of the platform box in a specific embodiment of this disclosure. In some embodiments, such as Figure 6a and Figure 6b As shown, the support device for testing and analysis further includes:

[0058] The stage box 60 has a receiving cavity 62 inside, and a plurality of substrates 10 arranged in alignment along the first direction are located inside the receiving cavity.

[0059] For example, the stage box 60 includes a main body 63 and at least one baffle 61 detachably connected to the main body 63. Figure 6b The diagram shows two baffles 61. The main body 63 has the receiving cavity 62, and the baffles 61 are used to close the receiving cavity 62. After the film layer 12 to be tested is deposited on the support layer 11, the baffles 61 can be separated from the main body 63. After the substrate 10, together with the support layer 11 and the film layer 12 to be tested, is transferred to the carrier structure in the receiving cavity 62, the baffles 61 are then connected to the main body 63 to close the receiving cavity 62, thus preventing the external environment from affecting the testing and analysis of the film layer 12.

[0060] A substrate 10, a support layer 11 on the substrate 10, and a test film layer 12 located on the support layer 11 are considered as a carrier unit. Multiple carrier units are stacked along the first direction within the receiving cavity 62. During testing and analysis, the test signal enters the receiving cavity 62 and is sequentially directed along the first direction towards the multiple carrier units. The sample signal emitted from the receiving cavity 62 is the sum of the sample signals generated by the test film layers 12 in all the carrier units spaced apart along the first direction, thereby increasing the overall intensity of the sample signal.

[0061] The material of the stage box 60 should avoid affecting the sample signal and / or the test signal. In one example, the material of the stage box 60 may be the same as the material of the support layer 11, thereby avoiding any impact on the sample signal or the test signal.

[0062] In one example, the stage box 60 has a first opening at the top, through which the test signal is directly directed to the test film 12 in the carrier unit. In another example, the stage box 60 has a second opening at the bottom, through which the sample signal exits the stage box 60. In yet another example, the stage box 60 has a first opening at the top and a second opening at the bottom, with the test signal directly directed to the test film 12 in the carrier unit through the first opening and the sample signal exiting the stage box 60 through the second opening.

[0063] In one example, the stage box 60 may not have a structure for supporting the carrier units; multiple carrier units located in the stage box 60 can be directly stacked along the first direction, thereby simplifying the structure of the stage box 60. In another example, multiple support structures spaced apart along the first direction can be provided in the receiving cavity 62, thereby enabling multiple carrier units with the film layer 12 deposited on them to be transferred one by one onto the support structures. This ensures that the through holes 13 in the multiple carrier units spaced apart along the first direction are aligned along the first direction and ensures the stability of the carrier units within the stage box 60.

[0064] In some embodiments, the width of the receiving cavity 62 in the stage box 60 along the second direction is at least equal to the width of the substrate 10 along the second direction, thereby enabling the substrate 10 to be seamlessly secured in the receiving cavity 62 at least along the second direction. This ensures that the through holes 13 in the plurality of carrier units spaced apart along the first direction are aligned along the first direction, while preventing the substrate 10 from shaking within the stage box 60, thus ensuring the smooth testing and analysis of the film layer 12 to be tested.

[0065] This specific embodiment also provides a method for forming a support device for testing and analysis. (Appendix) Figure 7 This is a flowchart illustrating the method for forming the support device used for testing and analysis in a specific embodiment of this disclosure, with appendix. Figure 8 - Appendix Figure 13 This is a schematic diagram of the main process structure in the formation of the support device for testing and analysis according to a specific embodiment of this disclosure. The structure of the support device for testing and analysis formed according to this embodiment can be found in [reference needed]. Figures 1-5 , Figure 6a and Figure 6b .like Figures 1-5 , Figures 6a-6b and Figures 7-13 As shown, the method for forming the bearing device for testing and analysis includes the following steps:

[0066] Step S71: Form a substrate 10 and a support layer 11 on the top surface of the substrate 10, wherein the support layer 11 is used to support the film layer 12 to be tested, such as... Figure 10 As shown;

[0067] Step S72: A through-hole 13 is formed in the substrate 10 along a first direction, allowing the sample signal generated by the test film 12 to pass through the support layer 11 and the through-hole 13, while the substrate 10 can shield the sample signal. The first direction is perpendicular to the top surface of the substrate 10. Figure 1 and Figure 2 As shown.

[0068] In some embodiments, the specific steps of forming the substrate 10 and the support layer 11 located on the top surface of the substrate 10 include:

[0069] An initial substrate 80 is provided, the initial substrate 80 including a first surface S1 and a second surface S2 that are relatively distributed along the first direction, such as Figure 8 As shown;

[0070] The support layer 11 is formed on the first surface S1 of the initial substrate 80, such as... Figure 9 As shown;

[0071] The initial substrate 80 is thinned from the second surface S2 of the initial substrate 80 to form the substrate 10, as follows: Figure 10 As shown.

[0072] For example, the initial substrate 80 is a silicon substrate. The thickness H1 of the initial substrate 80 along the first direction can be, for example, 750 μm. Figure 8 As shown. The support layer 11 can be deposited on the first surface S1 of the initial substrate 80 using chemical vapor deposition, physical vapor deposition, or atomic layer deposition processes, such as... Figure 9As shown. The support layer 11 is made of a material with high hardness to facilitate subsequent support of the film layer 12 to be tested. In some embodiments, the material of the support layer 11 can be any one or a combination of two or more of SiN, SiC, SiCN, and SiO2. The thickness of the support layer 11 along the first direction can be 10nm to 200nm. Subsequently, the initial substrate 80 can be thinned from the second surface S2 of the initial substrate 80 using processes such as chemical mechanical polishing to form the substrate 10, and the thickness H2 of the substrate 10 along the first direction is 200μm to 300μm, as shown. Figure 10 As shown.

[0073] In some embodiments, the substrate 10 further includes a bottom surface BS of the substrate 10 opposite to the top surface TS of the substrate 10 along the first direction; the specific steps of forming a through hole 13 in the substrate 10 along the first direction include:

[0074] The substrate 10 is etched from its bottom surface BS to form the through-hole 13 with a pore size of nanometer or micrometer.

[0075] In some embodiments, the specific steps of etching the substrate 10 from the bottom surface BS of the substrate 10 include:

[0076] The substrate 10 is etched from the bottom surface BS of the substrate 10 using at least one focused ion beam etching process.

[0077] In some embodiments, the specific steps of etching the substrate 10 from the bottom surface BS of the substrate 10 using at least one focused ion beam etching process include:

[0078] An opening 14 is formed in the substrate 10, extending from the bottom surface BS of the substrate 10 to the top surface of the substrate 10, as follows: Figure 11 As shown;

[0079] The substrate 10 at the bottom of the opening 14 is etched using a first focused ion beam etching process to form a first through-hole 110, as shown below. Figure 12 As shown;

[0080] A second focused ion beam etching process is used to etch the substrate 10 at the bottom of the first via 110 to form a second via 130 exposing the support layer. The diameter of the second via 130 is smaller than the diameter of the first via 110. The first via 110 and the second via 130 communicating with it together constitute the via 130. Figure 13 , Figure 1 and Figure 2 As shown.

[0081] In some embodiments, the electron microscope magnification of the first focused ion beam etching process is less than that of the second focused ion beam etching process, and the etching voltage of the first focused ion beam etching process is greater than that of the second focused ion beam etching process.

[0082] For example, after the substrate 10 is formed, the opening 14 can be formed using an etching process or an automated grinding machine drilling process. The opening 14 does not penetrate the substrate 10 along the first direction. Figure 11 As shown. The width of the opening 14 along the second direction (i.e., the inner diameter D1 of the opening 14) can be 0.5cm to 2cm. The thickness H3 of the remaining substrate 10 at the bottom of the opening 14 along the first direction is 10μm to 100μm. Then, a first focused ion beam etching process is used to etch the substrate 10 at the bottom of the opening 14 to form a first through-hole 110, as shown. Figure 12 As shown. The aperture D3 of the first via 110 is 100 μm to 500 μm. The first via 110 does not penetrate the substrate 10 along the first direction. In one example, the thickness H4 of the substrate 10 remaining at the bottom of the first via 110 along the first direction is 1 μm to 30 μm. In the first focused ion beam etching process, etching parameters can be set to a small electron microscope magnification (i.e., a large field of view) and a high etching voltage (e.g., 30 kV) to coarsely etch the substrate 10 at the bottom of the opening 14, thereby improving the formation efficiency of the via 13. Next, a second focused ion beam etching process is used to etch the substrate 10 at the bottom of the first via 110 to form a second via 130 exposing the support layer, as shown. Figure 13 As shown. In the second focused ion beam etching process, etching parameters can be set to a high electron microscope magnification (i.e., a small field of view) and a low etching voltage (e.g., 0.5kV to 5kV) to perform fine etching on the substrate 10 at the bottom of the opening 14. By employing both the first and second focused ion beam etching processes to form the via 13, on the one hand, the feature size of the via 13 can be controlled more precisely; on the other hand, damage to the substrate 10 can be reduced.

[0083] In other embodiments, the vias can be formed using a single focused ion beam etching process or three or more focused ion beam etching processes to meet the testing and analysis requirements for films of different thicknesses or different types of testing and analysis requirements.

[0084] This specific implementation also provides a test and analysis method, attached... Figure 14 This is a flowchart of the test and analysis method in a specific embodiment of this disclosure. For example... Figure 14As shown, the test analysis method includes the following steps:

[0085] Step S141, provide as follows Figures 1-5 , Figure 6a , Figure 6b and Figure 13 The bearing device for testing and analysis has a through-hole 13 with a diameter of nanometer or micrometer.

[0086] Step S142: An atomic layer deposition process is used to directly grow a test film 12 with a sub-nanometer thickness on the surface of the support layer 11, such as... Figure 1 As shown;

[0087] Step S143: Transmit a test signal to the film layer 12 under test and receive the sample signal generated by the film layer 12 under test from the bottom of the through hole 13. The bottom of the through hole 13 is opposite to the top of the through hole 13 along the first direction, and the top of the through hole 13 faces the support layer 11. Figure 1 and Figure 5 As shown.

[0088] For example, a plurality of openings 14 and a plurality of through holes 13 are formed in the substrate 10 to obtain, as shown in the figure. Figure 4 Following the structure shown, the substrate 10 and the support layer 11 are trimmed, adjusting the size of the substrate 10 to the centimeter level. The trimmed centimeter-sized substrate and the support layer 11 above it are used together as a slide. The slide includes at least one opening 14. In one example, the side length of the slide is 0.5 cm to 2 cm. Then, the test film 12 with a sub-nanometer thickness can be grown directly on the surface of the sub-support layer in the slide using atomic layer deposition (ALD), eliminating the need for pellet preparation or powder preparation, thus simplifying the testing and analysis of the test film 12. The slide with the test film 12 then is transferred to a substrate such as... Figure 6a and Figure 6b The stage box 60 shown is located within the receiving cavity 62. After the receiving cavity 62 of the stage box 60 is closed by the baffle 61, a test signal is transmitted to the film layer 12 under test, and the sample signal generated by the film layer 12 under test is received from the bottom of the through hole 13, thereby characterizing the film layer 12 under test.

[0089] The carrier device and its formation method, as well as the testing and analysis method provided in some embodiments of this specific embodiment, form a substrate with through holes and provide a substrate surface for carrying a film layer to be tested. The sample signal generated by the film layer to be tested can pass through the support layer and the through holes, and the substrate can block the sample signal, thereby allowing the sample signal to be received from the side of the through holes away from the support layer. This simplifies the testing and analysis operation of the film layer to be tested and improves the efficiency of the analysis. In some embodiments of this specific embodiment, the aperture of the through holes can be set to the micrometer or nanometer level, thereby enabling the testing and analysis of the film layer to be tested with a sub-nanometer thickness. This achieves the characterization of the film layer to be tested with a sub-nanometer thickness and provides a reference for improving semiconductor manufacturing processes and increasing semiconductor manufacturing yield.

[0090] The above description is only a preferred embodiment of this disclosure. It should be noted that those skilled in the art can make several improvements and modifications without departing from the principles of this disclosure, and these improvements and modifications should also be considered within the scope of protection of this disclosure.

Claims

1. A support device for testing and analysis, characterized in that, include: A substrate having a through hole extending through the substrate along a first direction perpendicular to the top surface of the substrate; A support layer is located on the top surface of the substrate and is used to support the test film layer. The sample signal generated by the test film layer can pass through the support layer and the through hole, and the substrate can shield the sample signal. The film layer to be tested has a sub-nanometer thickness, and the pore size of the through-hole is nanometer or micrometer. The substrate also has a plurality of openings spaced apart along a second direction, the openings extending from the bottom surface of the substrate to the top surface of the substrate, the bottom surface of the substrate and the top surface of the substrate being distributed opposite to each other along the first direction, and the second direction being parallel to the top surface of the substrate; The end of the opening facing the support layer has a plurality of through holes spaced apart along the second direction and communicating with the opening.

2. The support device for testing and analysis according to claim 1, characterized in that, The number of substrates is multiple, and the multiple support layers are distributed on the multiple substrates; The plurality of substrates are arranged at intervals along the first direction, and the through holes in any two adjacent substrates are aligned and arranged along the first direction.

3. The bearing device for testing and analysis according to claim 2, characterized in that, Also includes: A stage box having a receiving cavity, wherein a plurality of said substrates arranged in alignment along the first direction are located inside the receiving cavity.

4. A method for forming a support device for testing and analysis, comprising forming a support device as described in any one of claims 1-3, characterized in that, Includes the following steps: A substrate and a support layer on the top surface of the substrate are formed, the support layer being used to support the film layer to be tested; A through-hole is formed in the substrate along a first direction, through which the sample signal generated by the film to be tested can pass through the support layer and the through-hole, and the substrate can shield the sample signal, wherein the first direction is perpendicular to the top surface of the substrate.

5. The method for forming a support device for testing and analysis according to claim 4, characterized in that, The substrate further includes a bottom surface of the substrate opposite to the top surface of the substrate along the first direction; the specific steps of forming a through hole in the substrate along the first direction include: The substrate is etched from the bottom surface of the substrate using at least one focused ion beam etching process to form the through-hole with a pore size of nanometer or micrometer.

6. The method for forming a support device for testing and analysis according to claim 5, characterized in that, The specific steps of etching the substrate from its bottom surface using at least one focused ion beam etching process include: An opening is formed in the substrate, extending from the bottom surface of the substrate to the top surface of the substrate; The substrate at the bottom of the opening is etched along the opening using a first focused ion beam etching process to form a first through hole; The substrate at the bottom of the first via is etched along the first via using a second focused ion beam etching process to form a second via exposing the support layer. The diameter of the second via is smaller than that of the first via. The first via and the second via connected to it together constitute the via.

7. The method for forming a support device for testing and analysis according to claim 6, characterized in that, The electron microscope magnification of the first focused ion beam etching process is less than that of the second focused ion beam etching process, and the etching voltage of the first focused ion beam etching process is greater than that of the second focused ion beam etching process.

8. A test and analysis method, characterized in that, Includes the following steps: A support device for testing and analysis as described in claim 1 is provided, wherein the aperture of the through hole is in the nanometer or micrometer range; A test film with a sub-nanometer thickness is grown directly on the surface of the support layer using atomic layer deposition (ALD) technology. The test signal is transmitted to the film layer under test, and the sample signal generated by the film layer under test is received from the bottom of the through hole. The bottom of the through hole is opposite to the top of the through hole along the first direction, and the top of the through hole faces the support layer.

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