A measurement method of a nanometer and micrometer non-contact in-situ optical thermal characterization technology combination

Abstract

The application discloses a kind of nanometer non-contact in-situ optical thermal characterization technology combination measurement method, this method includes: for larger device size, measurement accuracy requirement is not high, qualitative evaluation main heat source area or thermal failure positioning wide band gap semiconductor power device thermal characterization application demand, using infrared thermal imaging mode;For smaller device size, measurement accuracy requirement is higher, quantitative characterization wide band gap, ultra-wide band gap semiconductor power device temperature distribution thermal characterization application demand, for transverse structure device using thermal reflection imaging mode and nanometer particle-based Raman thermal characterization mode characterization measurement device metal electrode temperature and device surface temperature;For vertical structure device using thermal reflection imaging mode, Raman thermal characterization mode and nanometer particle-based Raman thermal characterization mode characterization measurement device metal electrode temperature, device surface temperature and device surface temperature under even thickness.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, specifically relating to a measurement method combining nano- and micro-scale non-contact in-situ optical thermal characterization techniques. Background Technology

[0002] (Ultra)wide bandgap semiconductor power devices are currently in the early stages of application, simply replacing silicon power devices in existing power solutions. However, as the (ultra)wide bandgap semiconductor power device industry matures and becomes more widespread, actively leveraging their thermoelectric performance advantages through device-level thermoelectric synergistic optimization design to create many new application scenarios that silicon devices cannot achieve has become an inevitable trend in the energy industry. For example, typical high-temperature, high-power-density applications include deeply integrated electric vehicle powertrains, multi-electric all-electric aircraft, mobile energy storage charging stations, and power application scenarios where various heat dissipation and cooling solutions are severely limited. 1) High thermoelectric reliability: Wide-bandgap and ultra-wide-bandgap semiconductor power devices will significantly change the landscape of power system design and enhance power density potential, providing design engineers with new and broader expansion space. 2) Self-heating effect is a very important consideration in power device design, because even a slight increase in the device's peak temperature can lead to significant losses in device performance, reliability, and mean time between failures. 3) The details of thermal characteristics and factual evidence are important prerequisites for constructing a self-consistent thermoelectric coupling model for wide-bandgap semiconductor and ultra-wide-bandgap semiconductor power devices, conducting thermoelectric numerical simulation research based on the model, and device-level thermoelectric co-optimization design.

[0003] However, there is currently a lack of a high-spatial-precision, comprehensive, low-cost, and easy-to-operate method for simultaneous thermoelectric experimental research on the temperature characterization and measurement of power devices with different structures of silicon, wide-bandgap semiconductors, and ultra-wide-bandgap semiconductors to study their thermoelectric properties. Summary of the Invention

[0004] To address the aforementioned problems in related technologies, this invention provides a measurement method combining nano- and micro-scale non-contact in-situ optical-thermal characterization techniques. The technical problem to be solved by this invention is achieved through the following technical solution:

[0005] This invention provides a measurement method combining nano- and micro-scale non-contact in-situ optical-thermal characterization techniques, comprising:

[0006] Obtain the parameters and characterization measurement requirements of the device under test; the parameters and characterization measurement requirements represent the size, temperature range, temperature area, measurement accuracy, and steady-state power consumption of the device under test.

[0007] When the parameters and characterization measurement requirements are the first type of test requirements, the temperature characterization measurement of the device under test is performed by infrared thermal imaging.

[0008] When the parameters and characterization measurement requirements are the second type of test requirements, the temperature characterization measurement of the device under test is performed using thermal reflection imaging and nanoparticle-based Raman thermal characterization. The nanoparticle-based Raman thermal characterization measure the temperature of a specific area of ​​the device under test by measuring the change in the Raman displacement of the nanoparticles attached to the surface of the device under test.

[0009] When the parameters and characterization measurement requirements are for the third type of test requirements, the temperature characterization measurement of the device under test is performed using thermal reflection imaging, Raman thermal characterization, and nanoparticle-based Raman thermal characterization.

[0010] In some embodiments, the temperature characterization measurement of the device under test using thermal reflection imaging, Raman thermal characterization, and nanoparticle-based Raman thermal characterization includes:

[0011] The surface temperature of the metal of the device under test is characterized by thermal reflectance imaging.

[0012] The device under test is controlled at a preset initial temperature, and Raman spectra of the semiconductor material region of the device under test are collected using a Raman spectrometer and a sealed high-temperature cavity. The Raman shift at the preset initial temperature is determined based on the measured Raman spectra.

[0013] Raman spectra of the semiconductor material region of the device under test are collected using a Raman spectrometer and a sealed high-temperature cavity at multiple preset temperatures. Based on the Raman spectra, the a priori relationship between the Raman shift change of the semiconductor device (or material) and temperature is determined. The multiple preset temperatures include the preset initial temperature.

[0014] The device under test is controlled to be under steady-state power consumption, and Raman spectra of the semiconductor material region of the device under test are collected using a Raman spectrometer and a sealed high-temperature cavity. The Raman shift under steady-state power consumption is determined based on the collected Raman spectra.

[0015] Based on the Raman displacement at the preset initial temperature, the Raman displacement at the steady-state power consumption to be measured, and the prior relationship between the Raman displacement change and temperature of the semiconductor device (or material), the uniform thickness temperature of the semiconductor material region of the device under test is characterized.

[0016] The device under test is controlled at a preset initial temperature, and Raman spectra of nanoparticles attached to the surface of the device under test are collected using a Raman spectrometer and a sealed high-temperature chamber. The Raman shift of the nanoparticles at the preset initial temperature is determined based on the collected Raman spectra.

[0017] Raman spectra of nanoparticles attached to the surface of the device under test are collected at multiple preset temperatures using a Raman spectrometer and a sealed high-temperature chamber. Based on the Raman spectra of the nanoparticles, the prior relationship between the Raman shift change of the nanoparticles and the temperature is determined. The multiple preset temperatures include the preset initial temperature.

[0018] The device under test is controlled to be under steady-state power consumption, and the Raman spectrum of the nanoparticles on the surface of the device under test is collected by a Raman spectrometer and a sealed high-temperature cavity. The Raman shift of the nanoparticles under steady-state power consumption is determined based on the measured Raman spectrum.

[0019] The surface temperature of the device under test is characterized by the Raman displacement of the nanoparticles at the preset initial temperature, the Raman displacement of the nanoparticles under steady-state power consumption, and the prior relationship between the change in Raman displacement of the nanoparticles and temperature.

[0020] In some embodiments, the device under test (DUT) is placed on a heat dissipation platform with electrical and thermal conductivity and temperature control functions within a sealed high-temperature cavity; the Raman spectra of nanoparticles attached to the surface of the DUT are collected using a Raman spectrometer and a sealed high-temperature cavity at multiple preset temperatures, including:

[0021] By controlling the temperature of the heat dissipation platform inside the sealed high-temperature cavity, the device under test on the heat dissipation platform is controlled to be at a preset initial temperature, and the Raman spectrum of the nanoparticles at the preset initial temperature is collected.

[0022] The temperature of the heat sink is raised to a first temperature and held for a period of time. The Raman spectrum of the nanoparticles at the first temperature is then collected. The temperature of the heat sink is then raised to a second temperature and held for a period of time. The Raman spectrum of the nanoparticles is then collected again. This measurement is repeated until the temperature of the heat sink reaches a preset maximum temperature, thus obtaining the Raman spectra of the nanoparticles at multiple preset temperatures. The preset initial temperature and the first temperature, as well as the first temperature and the second temperature, have the same temperature difference.

[0023] In some embodiments, the plurality of preset temperatures includes: a preset initial temperature, a preset maximum temperature, and a plurality of different temperatures having the same temperature difference; determining the prior correspondence between the Raman shift change of the nanoparticles and the temperature based on the Raman spectrum of the nanoparticles includes:

[0024] By fitting the Raman spectrum of nanoparticles at each preset temperature using a preset function, the Raman shifts of the characteristic peaks of nanoparticles at each temperature are obtained.

[0025] The difference between the Raman displacement of the nanoparticles at each preset temperature and the Raman displacement of the nanoparticles at the preset initial temperature is determined to obtain the change in Raman displacement of the nanoparticles at each preset temperature.

[0026] Linear fitting is performed on the multiple preset temperatures and the corresponding changes in the Raman displacement of the nanoparticles to obtain a standard curve of Raman displacement change of nanoparticles versus temperature, which serves as the prior correspondence between the Raman displacement change of nanoparticles and temperature.

[0027] In some embodiments, characterizing the surface temperature of the device under test based on the nanoparticle Raman displacement at the preset initial temperature, the nanoparticle Raman displacement under steady-state power consumption, and the prior correlation between the change in nanoparticle Raman displacement and temperature includes:

[0028] The difference between the Raman displacement of the nanoparticles at the preset initial temperature and the Raman displacement of the nanoparticles under steady-state power consumption is determined to obtain the change in Raman displacement of the nanoparticles under steady-state power consumption.

[0029] From the prior relationship between the Raman displacement change of nanoparticles and temperature, the temperature corresponding to the Raman displacement change of nanoparticles under steady-state power consumption is determined, and this temperature is taken as the surface temperature of the device under test.

[0030] In some embodiments, the first type of test requirements are: the size of the device under test is greater than or equal to a preset size, the temperature measurement range is a preset range, the measurement accuracy is a first preset accuracy, and the temperature measurement area is the concentrated heat source area of ​​the device.

[0031] When the parameters and characterization measurement requirements meet the first type of test requirements, the temperature characterization measurement of the device under test is performed using infrared thermal imaging, including:

[0032] The device under test is controlled to be under the steady-state power consumption to be measured, and the surface temperature of the device under test is characterized by infrared thermal imaging. Based on the surface temperature, the concentrated area of ​​heat source of the device under test is determined.

[0033] In some embodiments, the second type of test requirements are: the size of the device under test is smaller than a preset size, the structure of the device under test is a transverse structure, the temperature distribution of the device under test is characterized under the measured steady-state power consumption, the measurement accuracy is a second preset accuracy, the temperature measurement range is a preset range, and the temperature measurement area is a specific range area.

[0034] When the parameters and characterization measurement requirements meet the second type of test requirements, the temperature characterization measurement of the device under test is performed using thermal reflection imaging and nanoparticle-based Raman thermal characterization, including:

[0035] The device under test is controlled to be under the steady-state power consumption to be measured, and the metal surface temperature of the device under test is characterized by thermal reflection imaging.

[0036] The surface temperature of the device under test (DUT) under steady-state power consumption was characterized by Raman thermal characterization based on nanoparticles.

[0037] In some embodiments, the third type of test requirements are: the size of the device under test is smaller than a preset size, the structure of the device under test is a vertical structure, the measurement accuracy is a third preset accuracy, the temperature measurement range is a preset range, and the temperature measurement area is a concentrated heat source area.

[0038] When the parameters and characterization measurement requirements meet the third type of test requirements, the temperature characterization measurement of the device under test is performed using thermal reflectance imaging, Raman thermal characterization, and nanoparticle-based Raman thermal characterization, including:

[0039] The device under test is controlled to be under the steady-state power consumption to be measured, and the surface temperature of the metal is characterized and measured by thermal reflection imaging.

[0040] The temperature of the uniform thickness of the semiconductor material region of the device under test was characterized by Raman thermal characterization under steady-state power consumption.

[0041] The surface temperature of the device under test (DUT) under steady-state power consumption was characterized by Raman thermal characterization based on nanoparticles.

[0042] In some embodiments, the nanoparticles are any one of the following:

[0043] Other highly temperature-sensitive nanoparticles include anatase titanium dioxide microparticles with a purity of at least 99.8%, diamond particles with a purity of at least 99%, aluminum nitride particles with a purity of at least 99.5%, alumina particles with a purity of at least 99.99%, boron nitride particles with a purity of at least 99.5%, and others.

[0044] The present invention has the following beneficial technical effects:

[0045] 1) This invention, through infrared thermal imaging, thermal reflection imaging, and Raman thermal characterization, can control the lateral measurement accuracy of the main heat source region (heat source concentration region) of the device to 200nm-600nm, and the longitudinal measurement accuracy to a few micrometers below the surface of the metal electrode and the semiconductor material region. Furthermore, through the proposed nanoparticle-based Raman thermal characterization method, the longitudinal measurement accuracy of the main heat source region of the device can be further improved. This accuracy meets the measurement requirements for high spatial accuracy of thermal characteristics details of all heat source regions of silicon, wide bandgap, and ultra-wide bandgap power devices under steady-state conditions; thus effectively improving the spatial accuracy of characterization measurements.

[0046] 2) The proposed nanoparticle-based Raman thermal characterization method indirectly obtains the temperature distribution of the channel region (main heat source region) of (ultra)wide bandgap semiconductor devices with the channel covered by the field plate structure by characterizing and measuring the change of Raman displacement of nanoparticles attached to the device surface; thus solving the limitation of existing thermal characterization methods in measuring the thermally sensitive area of ​​the device.

[0047] 3) Raman thermal characterization based on nanoparticles has advantages such as high spatial accuracy, comprehensive coverage, low cost, and convenient operation.

[0048] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0049] Figure 1 An optional flowchart of a measurement method for a combination of nano- and micro-scale non-contact in-situ optical thermal characterization techniques provided in an embodiment of the present invention;

[0050] Figure 2 A schematic diagram of the measurement region on a semiconductor power device with a lateral structure, illustrating various exemplary thermal characterization methods provided in embodiments of the present invention.

[0051] Figure 3 A schematic diagram illustrating an exemplary test environment for device measurement using Raman thermal characterization based on anatase titanium dioxide microparticles, provided for embodiments of the present invention.

[0052] Figure 4 An exemplary curve of the Lorentz function provided for embodiments of the present invention;

[0053] Figure 5 An exemplary Raman shift change-temperature standard curve of anatase titanium dioxide microparticles provided for embodiments of the present invention. Detailed Implementation

[0054] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.

[0055] In the description of this invention, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0056] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0057] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, disclosure, and appended claims in carrying out the claimed invention. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit can implement several functions listed in the claims. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce good results.

[0058] Typically, the thermal characteristics of power devices are characterized using two methods: electrical thermal characterization and optical thermal characterization. Electrical thermal characterization methods, such as the Temperature Sensitive Electrical Parameter (TSEP) method, are widely used to evaluate device junction temperatures. Optical thermal characterization methods include infrared thermal imaging, thermal reflection imaging, and Raman thermal characterization. Infrared thermal imaging can be used for thermal failure localization and reliability studies in electronic devices with lower precision requirements, offering a lateral spatial resolution greater than 3 μm. Thermal reflection imaging measures the temperature changes of a device under different steady-state power consumptions by measuring the change in surface reflectivity as a function of temperature. It can be used to measure the surface temperature distribution of the metal electrode structure of power devices and the channel temperature of wide-bandgap semiconductor power devices without field plates. Raman thermal characterization measures the changes in typical Raman signals (including Raman shift, peak intensity, etc.) scattered from the near-ultraviolet to visible light regions at different temperatures to characterize the temperature of semiconductor materials and devices under different steady-state power consumptions. It yields the average temperature across the entire thickness of the semiconductor power device, with relatively low longitudinal accuracy, approximately a few micrometers. Since different materials have different Raman shifts, by applying a probe material temperature sensing device (such as a plasmonic nanoparticle monolayer probe material, an auxiliary diamond probe, etc.) to the surface of (ultra)wide bandgap semiconductor power devices, heat can be transferred from the device surface to the auxiliary probe material. By recording the peak intensity change or Raman peak shift change of the probe material, the surface temperature of the power device can be characterized, which further alleviates the problem that the longitudinal averaging of ordinary Raman thermal characterization leads to a lower measured actual temperature.

[0059] 1. Limitations of the accuracy of existing thermal characterization measurements

[0060] 1) Measurements based on the Thermosensitive Electrical Parameter (TSEP) method typically require complex measurement circuits and compensation for operating conditions other than temperature (such as load current). Furthermore, when operating at higher current levels and requiring self-thermal compensation, the calibration procedure can encounter substantial problems, leading to discrepancies between the measured temperature and the actual temperature of the power device. More importantly, the TSEP method assesses the average temperature of the device and cannot provide sufficient spatial accuracy to extract the temperature distribution and peak temperature points that directly affect device thermal failure and reliability studies.

[0061] 2) Infrared thermal imaging has relatively low spatial resolution (>3μm). Furthermore, the lateral averaging effect in lateral device structures often leads to an underestimation of the measured gate metal temperature (the location of the device's peak temperature). Additionally, the sample base for infrared thermal measurements typically needs to be heated to 50℃–70℃, resulting in a significant deviation from the actual operating conditions of the device and preventing a complete and accurate reflection of temperature changes. Therefore, infrared thermal imaging is only suitable for qualitative assessment of temperature distribution in larger, less precise devices, and cannot guarantee quantitative accuracy, thus limiting its measurement precision.

[0062] 3) Raman thermal characterization can be used to measure the temperature of semiconductor materials. However, because the bandgap energy of (ultra)wide bandgap semiconductor materials is greater than the excitation photon energy, using typical Raman laser wavelengths in the near-ultraviolet to visible light region yields the average temperature across the entire thickness of (ultra)wide bandgap semiconductor power devices. For example, with a 532nm laser and a 50× objective lens (NA = 0.45), the detection depth obtained using a Raman spectrometer is approximately 4μm. However, the heat-generating region in lateral structure devices is confined to the active device channel, which is located within tens of nanometers of the device surface. Therefore, the average temperature across the entire thickness obtained using this technique will be significantly lower than the actual peak operating temperature of the device.

[0063] 2. Limitations of the thermally sensitive area of ​​existing thermal characterization and measurement devices

[0064] Infrared thermal imaging, due to its relatively long wavelength, detects thermal radiation that is almost transparent to ultra-wide bandgap semiconductor materials, making it unable to specifically probe the channel temperature of ultra-wide bandgap semiconductor devices, which is often the location of the device's peak temperature (thermally sensitive region). Due to the higher potential for BFOM values, ultra-wide bandgap semiconductor materials theoretically allow their lateral structure devices to withstand the same voltage levels as vertical silicon devices. However, this also means facing higher voltage and power densities. Complex field plates and termination technologies are used to effectively mitigate the peak electric field of such lateral structure devices. Because the bandgap of the materials used in these structures is wide, it is transparent to the measurement light sources—visible and near-ultraviolet light—relying on thermal reflection imaging. Therefore, for temperature studies of complex structures, such as (ultra)wide bandgap semiconductor devices with field plate structures covering the channel, thermal reflection imaging can only provide details of the surface temperature distribution of the metal electrode structure (nm-level), and cannot be used to assess the temperature of the active channel (thermally sensitive region) of such devices.

[0065] 3. Other limitations of existing Raman-assisted measurement methods

[0066] 1) A method for precise temperature detection based on surface-enhanced Raman scattering (SERS) of probe molecules supported by plasmonic nanoparticle monolayer films involves contacting the temperature sensor of the probe molecules with the heat source region of the device under test (DUT). Utilizing the temperature-dependent SERS effect, the relationship between characteristic Raman peak intensity and temperature is used to indirectly characterize the DUT within the temperature range of 25℃ to 140℃. This method has the following drawbacks: Firstly, the Raman peak intensity is affected by numerous factors, such as the Raman activity and content of the vibrational groups of the probe molecules, the wavelength and power of the laser used, and the different irradiation points of the laser on non-uniform samples, leading to poor measurement consistency and large errors. Secondly, the temperature measurement range of 25℃ to 140℃ is narrow and cannot meet the temperature characterization requirements of high-voltage, high-power devices across the entire power range. Furthermore, this method requires treating the plasmonic nanoparticle monolayer film temperature sensing layer with aqua regia or saturated alkaline solutions. These solutions are highly corrosive, posing a risk of corrosion to the surface electrodes of power devices and potential safety hazards. Finally, the preparation of plasmonic nanoparticle monolayer films is time-consuming, requiring multiple processes such as adhesion, lifting, and drying. The operation is cumbersome and also has certain requirements for the atmosphere (nitrogen).

[0067] 2) A temperature measurement method and device based on first-order diamond Raman spectroscopy: A variable-temperature device is used to heat or cool the diamond probe. Raman spectra of the diamond probe at multiple corresponding temperatures are collected, and the collected Raman spectra are fitted and analyzed to extract the center position, full width at half maximum (FWHM), and intensity data of the Raman peaks. A functional relationship is established between the extracted data and temperature. Subsequently, the diamond probe is placed on the surface of the device under test (DUT), and different powers are applied to the device. Data such as the Raman spectral shift of the diamond probe are indirectly collected. The extracted data is then substituted into the established functional relationship to calculate the temperature value. The limitations of this method are as follows: a) Using a fixed-shape diamond probe to detect the temperature of a power device requires a high degree of precision in the surface morphology of the DUT. b) The diamond probe has a certain volume, requiring more heat to heat up, which may lead to an underestimation of the actual temperature of the DUT. c) Diamond has low Raman temperature sensitivity, and the Raman shift is unstable with temperature changes. Therefore, this method requires a large temperature gradient and an error threshold at the same temperature, resulting in a large testing error and making high-precision measurement impossible. d) Diamond is expensive, leading to high experimental costs.

[0068] This invention addresses the shortcomings of current thermal characterization methods for wide-bandgap and ultra-wide-bandgap semiconductor power devices by proposing a measurement method combining nano- and micro-scale non-contact in-situ optical thermal characterization techniques. This method enables high-precision, comprehensive, low-cost, and convenient experimental research on the thermoelectric properties of silicon, wide-bandgap, and ultra-wide-bandgap semiconductor power devices with different structures under steady-state conditions. It provides more details and factual evidence on the process thermal characteristics, and offers more new and referable ideas for the thermoelectric co-design technology of such heat-sensitive devices with high reliability requirements, and for significantly improving the chances of device lifespan.

[0069] Figure 1 This is an optional flowchart of a measurement method combining nano- and micro-scale non-contact in-situ optical and thermal characterization techniques provided in an embodiment of the present invention, such as... Figure 1 As shown, the method includes the following steps:

[0070] S101. Obtain the parameter and characterization measurement requirements information of the device under test; the parameter and characterization measurement requirements information indicates the size of the device under test, the temperature range, the temperature area, the measurement accuracy, and the steady-state power consumption to be measured.

[0071] Here, the parameter and characterization measurement requirements information represents the device size, temperature range, temperature area, measurement accuracy, and steady-state power consumption to be measured.

[0072] Here, the parameter and characterization measurement requirements can be divided into three categories of test requirements. Specifically, the first category of test requirements is: the size of the device under test (DUT) is greater than or equal to a preset size; the surface temperature distribution of the DUT is characterized under the measured steady-state power consumption; the measurement accuracy is a first preset accuracy (e.g., greater than or equal to 3 μm); the temperature measurement range is a preset range (e.g., 25℃~300℃); and the temperature measurement area is the concentrated heat source region of the device. The second category of test requirements is: the size of the DUT is smaller than the preset size; the DUT has a lateral structure; the temperature distribution of the DUT is characterized under the measured steady-state power consumption; the measurement accuracy is a second preset accuracy (e.g., 200nm~600nm); the temperature measurement range is a preset range (e.g., 25℃~300℃); and the temperature measurement area can be 100 μm. The third type of test requires that the size of the device under test (DUT) is smaller than a preset size, the structure of the DUT is a vertical structure, the temperature distribution of the DUT is characterized under the measured steady-state power consumption, the measurement accuracy is a third preset accuracy (specifically including: for smooth metal regions, the lateral accuracy is 300nm~800nm, and the longitudinal accuracy is the metal surface; for high Raman thermally sensitive material regions, the lateral accuracy is 200nm~600nm, and the longitudinal accuracy is 4μm; for nanoparticle attached regions, the lateral accuracy is 200nm~600nm, and the longitudinal accuracy is the device surface), the temperature measurement range is a preset range (e.g., 25℃~300℃), and the temperature measurement area is the heat source concentration area.

[0073] Here, the device under test (DUT) can be a silicon or (ultra)wide bandgap semiconductor power device, or other types of semiconductor power devices. Different steady-state power consumption levels can be achieved by applying different powers to the DUT.

[0074] S102. When the parameters and characterization measurement requirements are the first type of test requirements, the temperature characterization measurement of the device under test is performed by infrared thermal imaging.

[0075] Here, when the acquired parameters and characterization measurement requirements meet the first type of test requirements, the device under test is controlled to be under the steady-state power consumption to be measured, and the surface temperature of the device under test is characterized and measured by infrared thermal imaging.

[0076] For example, for applications requiring thermal characterization of wide-bandgap semiconductor power devices with larger device size, lower measurement accuracy requirements, larger measurement range, and qualitative assessment of the main heat source area or thermal failure location, infrared thermal imaging can be used to characterize the surface metal temperature of the device under different steady-state power consumption conditions, thereby locking the main heat source area or locating thermal failure.

[0077] S103. When the parameter and characterization measurement requirements are the second type of test requirements, the temperature characterization measurement of the device under test is performed by thermal reflection imaging and nanoparticle-based Raman thermal characterization. Among them, the nanoparticle-based Raman thermal characterization measure the temperature of a specific area of ​​the device under test by measuring the change of Raman displacement corresponding to the nanoparticles attached to the surface of the device under test.

[0078] Here, the nanoparticles can be any of the following: anatase titanium dioxide microparticles with a purity of at least 99.8%, diamond particles with a purity of at least 99%, aluminum nitride particles with a purity of at least 99.5%, alumina particles with a purity of at least 99.99%, boron nitride particles with a purity of at least 99.5%, and other nanoparticles with high temperature sensitivity.

[0079] For example, the technical solution of the present invention will be further described below with the nanoparticles specifically being anatase titanium dioxide microparticles. Furthermore, when the nanoparticles are anatase titanium dioxide microparticles, the Raman thermal characterization method based on the nanoparticles is the Raman thermal characterization method based on the anatase titanium dioxide microparticles.

[0080] Here, when the parameter and characterization measurement requirements are for the second type of test requirements, the temperature characterization measurement of the device under test is performed using thermal reflection imaging and Raman thermal characterization based on anatase titanium dioxide microparticles.

[0081] Here, when the parameters and characterization measurement requirements are the second type of test requirements, the device under test can be controlled to be under the steady-state power consumption to be measured, and the metal surface temperature of the heat source concentration area can be measured by thermal reflection imaging; the surface temperature of the device under test under the steady-state power consumption to be measured can be characterized by Raman thermal characterization based on anatase titanium dioxide microparticles.

[0082] Here, the Raman thermal characterization method based on anatase titanium dioxide microparticles on the surface of the device under test (DUT) characterizes the surface temperature of the DUT by measuring the Raman displacement of the anatase titanium dioxide microparticles at a preset initial temperature, the Raman displacement of the anatase titanium dioxide microparticles under the measured steady-state power consumption, and the a priori relationship between the change in the Raman displacement of the anatase titanium dioxide microparticles and temperature. Specifically, this includes:

[0083] The difference between the Raman displacement of the anatase titanium dioxide microparticles at a preset initial temperature and the Raman displacement of the anatase titanium dioxide microparticles under the measured steady-state power consumption is determined to obtain the change in the Raman displacement of the anatase titanium dioxide microparticles under the measured steady-state power consumption. From the prior correspondence between the change in the Raman displacement of the anatase titanium dioxide microparticles and temperature, the temperature corresponding to the change in the Raman displacement of the anatase titanium dioxide microparticles under the measured steady-state power consumption is determined, and this temperature is taken as the surface temperature of the device under test.

[0084] For example, for temperature characterization applications requiring smaller device sizes and higher measurement accuracy (e.g., lateral accuracy of 300nm–800nm ​​for the metal region and lateral accuracy of 200nm–600nm for the semiconductor material region) to quantitatively characterize the temperature distribution of wide-bandgap and ultra-wide-bandgap semiconductor power devices, when the device structure is lateral, thermal reflection imaging can be used to characterize the surface temperature of the metal region, which is the main heat source area; and Raman thermal characterization based on anatase titanium dioxide microparticles can be used to characterize the surface temperature of the device under test under steady-state power consumption.

[0085] S104. When the parameter and characterization measurement requirements are Class III test requirements, the temperature characterization measurement of the device under test shall be performed by thermal reflection imaging, Raman thermal characterization, and nanoparticle-based Raman thermal characterization.

[0086] Here, when the parameters and characterization measurement requirements meet the third type of test requirements, the device under test (DUT) can be controlled to operate at the measured steady-state power consumption. The surface temperature of the metal in the concentrated heat source region can be characterized using thermal reflection imaging. The uniform thickness temperature of the semiconductor material region of the DUT, a few micrometers below the surface, can be characterized using Raman thermal characterization at the measured steady-state power consumption. Furthermore, the surface temperature of the DUT at the measured steady-state power consumption can be characterized using Raman thermal characterization based on anatase titanium dioxide microparticles.

[0087] For example, for thermal characterization applications requiring smaller device sizes and higher measurement accuracy (lateral accuracy of 300nm-800nm ​​for the metal region, lateral accuracy of 200nm-600nm for the semiconductor material region, and vertical accuracy of the semiconductor material region at or below the device surface), and quantitative characterization of the temperature distribution of wide-bandgap and ultra-wide-bandgap semiconductor power devices, when the device structure is a vertical structure, thermal reflection imaging can be used to measure the metal surface temperature of the device under different steady-state power consumption conditions, targeting the main heat source areas. The lateral accuracy is approximately 300nm-800nm, and the vertical accuracy is the temperature of the metal surface. Raman thermal characterization can be used to measure the semiconductor region temperature of the device, with a lateral accuracy of approximately 200nm-600nm and a vertical accuracy of approximately a few micrometers below the surface of the semiconductor material region. Raman thermal characterization based on anatase titanium dioxide microparticles can be used to measure the junction temperature or channel temperature of the device, with a lateral accuracy of approximately 200nm-600nm and a vertical accuracy of approximately the device surface.

[0088] For example, Table 1 compares the detection materials, lateral accuracy, longitudinal accuracy, presentation format of detection results, and transient resolution of various thermal characterization methods used in this invention.

[0089]

[0090] Table 1

[0091] For example, Figure 2 Taking a semiconductor power device with a lateral structure as an example, this invention demonstrates the regions measured by various thermal characterization methods. Figure 2 In this diagram, A represents infrared thermal imaging, B represents thermal reflection imaging, C represents Raman thermal characterization, and D represents Raman thermal characterization based on anatase titanium dioxide microparticles. Semiconductor power devices include metal electrodes (e.g., electrode D), metal electrodes G, and metal electrodes S. Semiconductor power devices include: an oxide layer, an n+-doped (ultra-wide) bandgap semiconductor source region, an n+-doped (ultra-wide) bandgap semiconductor drain region, and a p-doped (ultra-wide) bandgap semiconductor substrate. For example... Figure 2 As shown, infrared thermal imaging can be used to measure the surface temperature (including the metal region) of a semiconductor power device, thermal reflection imaging can be used to measure the surface temperature of the metal region of a semiconductor power device, Raman thermal characterization can be used to measure the average temperature of the full thickness of the semiconductor material region of a semiconductor power device, and Raman thermal characterization based on anatase titanium dioxide microparticles can be used to characterize and measure the surface temperature of a semiconductor power device.

[0092] According to Table 1 and Figure 2As can be seen, by measuring the temperature of the device for the first type of test requirements, the present invention can measure the surface metal temperature of the device under different steady-state power consumption conditions, thereby locking the main heat source area or locating thermal failure; and by measuring the temperature of the device for the second and third types of test requirements, it can achieve high spatial accuracy and comprehensive measurement of the thermal characteristics of power devices with horizontal and vertical structures under steady-state conditions, including all heat source areas such as electrodes and channels.

[0093] Here, the surface temperature of the device under test is measured under steady-state power consumption using Raman thermal characterization based on anatase titanium dioxide microparticles. This can be achieved through the following steps:

[0094] S201. Raman spectra of anatase titanium dioxide microparticles attached to the surface of the device under test are collected at multiple preset temperatures using a Raman spectrometer and a sealed high-temperature chamber. The a priori relationship between the change in Raman shift and temperature is determined based on the Raman spectra.

[0095] Specifically, a schematic diagram of the measurement environment for collecting Raman spectra of anatase titanium dioxide microparticles attached to the surface of the device under test (DUT) at multiple preset temperatures using a Raman spectrometer and a sealed high-temperature chamber is shown in Figure 3. In this diagram, 11 is the Raman lens of the Raman spectrometer, 12 is the sealed high-temperature chamber (which isolates the high temperature), 13 is the DUT with anatase titanium dioxide microparticles attached to its surface, 14 is the probe (applying voltage to the device to ensure steady-state operation), and 15 is a heat sink with thermal and electrical conductivity and temperature control functionality (e.g., it can be connected to a temperature controller and cooled by water to control its own temperature and display the temperature in real time). Figure 3 As shown, probe 14, heat sink 15, and device under test 13 are all located inside the sealed cavity 12, with device under test 13 located on heat sink 15.

[0096] Specifically, during measurement, the device under test (DUT) is controlled to be at a preset initial temperature by controlling the temperature of the heat sink in the sealed high-temperature chamber. A Raman spectrometer and the sealed high-temperature chamber are used to measure the Raman spectrum of the anatase titanium dioxide microparticles at the preset initial temperature. The temperature of the heat sink is then raised to a first temperature, and the Raman spectrum of the anatase titanium dioxide microparticles at the first temperature is measured again using the Raman spectrometer and the sealed high-temperature chamber. The temperature of the heat sink is then further raised to a second temperature, and the Raman spectrum is measured again. This process is repeated until the temperature of the heat sink reaches a preset maximum temperature, resulting in multiple preset temperature Raman spectra of the anatase titanium dioxide microparticles. The preset initial temperature and the first temperature, as well as the first temperature and the second temperature, have the same temperature difference.

[0097] The preset temperatures include: a preset initial temperature, a preset maximum temperature, and multiple different temperatures with the same temperature difference. After measuring the Raman spectrum, the Raman spectrum at each temperature can be fitted using a preset function to obtain the Raman shift of the characteristic peak corresponding to each temperature. The difference between the Raman shift corresponding to each temperature and the Raman shift corresponding to the preset initial temperature is determined to obtain the Raman shift change at each temperature. A linear fit is performed on multiple preset temperatures and their corresponding Raman shift changes to obtain a Raman shift change-temperature standard curve, which serves as the prior correlation between the Raman shift change and temperature. Here, the preset function can be the Lorentz function or other functions, such as the Gauss function, GCAS function, etc., and different functions can be selected for fitting based on the shape of different Raman characteristic peaks. Furthermore, fitting can be performed automatically using appropriate software, such as Origin.

[0098] For example, multiple preset temperatures include: a preset initial temperature of 25°C, a preset maximum temperature of 300°C, and multiple temperatures between 25°C and 300°C with a temperature difference of 5°C.

[0099] Here, Raman spectroscopy exhibits material selectivity, with each material having different Raman characteristic peaks, which can be used to characterize the temperature of different materials.

[0100] S202. Controlling the device under test (DUT) at a preset initial temperature, the Raman spectrum of the anatase titanium dioxide microparticles on the surface of the DUT is measured using a Raman spectrometer and a sealed high-temperature cavity. The Raman shift at the preset initial temperature is determined based on the measured Raman spectrum. Controlling the DUT at the measured steady-state power consumption, the Raman spectrum of the anatase titanium dioxide microparticles on the surface of the DUT is collected using a Raman spectrometer and a sealed high-temperature cavity. The Raman shift at the measured steady-state power consumption is determined based on the measured Raman spectrum.

[0101] For example, the initial temperature is preset to 25℃.

[0102] S203. Based on the Raman displacement at the preset initial temperature, the Raman displacement under the measured steady-state power consumption, and the a priori relationship between the change in Raman displacement of anatase titanium dioxide microparticles and temperature, the surface temperature of the device under test is characterized.

[0103] Specifically, the difference between the Raman shift at the preset initial temperature and the Raman shift corresponding to the anatase titanium dioxide microparticles on the surface of the device under test under the measured steady-state power consumption can be determined to obtain the change in Raman shift of the anatase titanium dioxide microparticles under the measured steady-state power consumption. Then, from the prior correspondence between the change in Raman shift of the anatase titanium dioxide microparticles and temperature, the temperature corresponding to the change in Raman shift of the anatase titanium dioxide microparticles under the measured steady-state power consumption can be determined, and this temperature can be used as the surface temperature of the device under test.

[0104] Here, the uniform thickness temperature of the semiconductor material region of the device under test is characterized by Raman thermal characterization under steady-state power consumption, including:

[0105] S301. Control the device under test to be at a preset initial temperature, and use a Raman spectrometer and a sealed high-temperature cavity to collect the Raman spectrum of the semiconductor material region of the device under test. Determine the Raman shift at the preset initial temperature based on the measured Raman spectrum.

[0106] For example, the initial preset temperature is 25℃.

[0107] S302. Raman spectra of the semiconductor material region of the device under test are collected using a Raman spectrometer and a sealed high-temperature cavity at multiple preset temperatures. Based on the Raman spectra, the relationship between the Raman shift change of the semiconductor device (or material) and temperature is determined. The multiple preset temperatures include the preset initial temperature.

[0108] For example, multiple preset temperatures include: a preset initial temperature of 25°C, a preset maximum temperature of 300°C, and multiple temperatures between 25°C and 300°C with a temperature difference of 5°C.

[0109] S303. Control the device under test to be under steady-state power consumption, and use a Raman spectrometer and a sealed high-temperature cavity to collect the Raman spectrum of the semiconductor material region of the device under test. Determine the Raman shift under steady-state power consumption based on the collected Raman spectrum.

[0110] S304. Based on the Raman displacement at the preset initial temperature, the Raman displacement under the measured steady-state power consumption, and the prior relationship between the Raman displacement change of the semiconductor device (or material) and temperature, the uniform thickness temperature of the semiconductor material region of the device under test is characterized.

[0111] Here, the specific principle of characterizing the uniform thickness temperature of the semiconductor material region of the device under test under steady-state power consumption by Raman thermal characterization can be found in the specific principle of measuring the surface temperature of the device under test under steady-state power consumption by Raman thermal characterization based on anatase titanium dioxide microparticles.

[0112] The following example illustrates a specific method for measuring the temperature of a device under test (DUT) at steady-state power consumption using Raman thermal characterization based on anatase titanium dioxide microparticles. In this example, the Raman spectrometer uses a 532 nm green laser with a power of 10 mW and a signal collection range of 100 cm⁻¹. -1 ~200cm -1 Within this range, the Raman spectrum is a single peak, the integration time is 0.5s, the number of integrations is 10 (acquisition time 5s), and the temperature range is 25℃~300℃.

[0113] First, anatase nano-titanium dioxide and anhydrous ethanol are thoroughly mixed using a mixer. The resulting suspension is then dropped onto an (ultra)wide bandgap semiconductor device. After the anhydrous ethanol evaporates, the anatase nano-titanium dioxide adheres to the surface of the (ultra)wide bandgap semiconductor device. Once the surface of the (ultra)wide bandgap semiconductor device is dry, it is transferred to… Figure 3 In the test environment shown, the temperature of anatase nano-titanium dioxide adhering to the surface of a (ultra)wide bandgap semiconductor device was adjusted on a heat sink within a sealed cavity. Starting at 25°C, the heat sink temperature was increased in 5°C gradients up to 300°C, with a 5-minute holding period at each measured temperature. The actual temperature of the heat sink was recorded, and the Raman spectrum of the anatase nano-titanium dioxide on the (ultra)wide bandgap semiconductor device surface was acquired at that temperature. The Raman spectra acquired at each temperature were fitted using Origin, and the Raman shift was extracted. The Lorentz function was used for fitting, and its formula is... For example, such as Figure 4 As shown, x C Let (x, y) be the Raman shift after fitting, representing the peak center. Let (x, y) be the Raman spectral data collected at each temperature, where x is the Raman shift, y is the peak intensity, w is the full width at half maximum (FWHM), y0 is the baseline, and A is the peak area above the baseline below the curve. When measuring the Raman spectrum of anatase titanium dioxide microparticles, at least three measurements are performed. When the difference in Raman shifts is less than the set error range, the average of the three Raman shifts is taken as the final Raman shift. The difference between the Raman shifts at different temperatures and the Raman shift at the initial temperature is obtained as the change in Raman shift at different temperatures. A linear relationship is established between the measured temperature change and the corresponding Raman shift change at the corresponding temperature, thus obtaining the standard curve of Raman shift change of anatase titanium dioxide microparticles versus temperature. For example, ... Figure 5 As shown, the slope is 0.02315, the intercept is 0, and the correlation coefficient R is [value missing]. 2 It is 0.99906.

[0114] Secondly, after the (ultra)wide bandgap semiconductor device in the sealed high-temperature cavity has been fully cooled, different powers are applied to the (ultra)wide bandgap semiconductor device to make it operate at different steady-state power consumption levels. At each steady-state power consumption level, the (ultra)wide bandgap semiconductor device generates an unknown temperature through self-heating. At this point, the Raman spectrum of the anatase titanium dioxide microparticles on the surface of the (ultra)wide bandgap semiconductor device is measured. The Raman shift is extracted by function fitting, and the difference between this and the Raman shift at the initial temperature is calculated to obtain a Raman shift change. This Raman shift change is then substituted back into the... Figure 5 The surface temperature of the (ultra)wide bandgap semiconductor device can be deduced from the Raman shift change-temperature standard curve of the obtained anatase titanium dioxide microparticles. When measuring the device temperature, at least three measurements should be performed. When the temperature difference is less than the set error range, the average temperature of the three measurements should be taken as the final value.

[0115] This invention aims to provide high-precision, comprehensive, low-cost, and convenient experimental measurement studies of the thermoelectric properties of silicon, wide-bandgap, and ultra-wide-bandgap semiconductor power devices with different structures under steady-state conditions. For applications requiring thermal characterization of wide-bandgap semiconductor power devices with larger device sizes, lower measurement accuracy requirements, and qualitative assessment of major heat source regions or thermal failure location, infrared thermography is employed. For applications requiring thermal characterization of smaller device sizes, higher measurement accuracy, and quantitative characterization of temperature distribution in wide-bandgap and ultra-wide-bandgap semiconductor power devices, thermal reflection imaging and nanoparticle-based Raman thermal characterization are used to characterize the metal electrode temperature and device surface temperature for lateral structure devices. For vertical structure devices, thermal reflection imaging, Raman thermal characterization, and nanoparticle-based Raman thermal characterization are used to characterize the metal electrode temperature, subsurface uniform thickness temperature, and device surface temperature. The nanoparticle-based Raman thermal characterization measures the surface temperature of the device by measuring the changes in the Raman displacement of nanoparticles attached to the device surface.

[0116] As can be seen from the above, the present invention has the following beneficial technical effects:

[0117] 1) This invention, through infrared thermal imaging, thermal reflection imaging, and Raman thermal characterization, can control the lateral measurement accuracy of the main heat source region (heat source concentration region) of the device to 200nm-600nm, and the longitudinal measurement accuracy to a few micrometers below the surface of the metal electrode and the semiconductor material region of the device. Furthermore, through the proposed nanoparticle-based Raman thermal characterization method, the longitudinal measurement accuracy of the main heat source region of the device can be controlled at the device surface. This accuracy meets the high spatial accuracy requirements for characterizing the thermal characteristics of all heat source regions of wide-bandgap and ultra-wide-bandgap power devices under steady-state conditions, thereby effectively improving the spatial accuracy of the measurement.

[0118] 2) The proposed nanoparticle-based Raman thermal characterization method can indirectly obtain the temperature distribution of the channel region (main heat source region) of (ultra)wide bandgap semiconductor devices with the channel covered by the field plate structure by measuring the change of Raman displacement of nanoparticles attached to the device surface; thus solving the limitation of existing thermal characterization methods in measuring the thermally sensitive area of ​​the device.

[0119] 3) Nanoparticle-based Raman thermal characterization offers advantages such as high spatial accuracy, comprehensive coverage, low cost, and ease of operation. It overcomes the shortcomings of existing methods for precise temperature detection based on the surface-enhanced Raman scattering effect of probe molecules supported by plasmonic nanoparticle monolayer films, and Raman-assisted measurement techniques based on diamond first-order Raman spectroscopy. These shortcomings include poor measurement consistency, large errors, inability to meet the temperature characterization requirements of high-voltage, high-power devices across the entire power range, potential corrosion of power device surface electrodes and safety hazards, high requirements for device surface morphology, complex fabrication processes, and high costs.

[0120] 4) This invention provides experimental research and thermoelectric coupling simulation studies on the thermoelectric characteristics of wide-bandgap and ultra-wide-bandgap semiconductor power devices. It reveals the thermoelectric coupling characteristics and mechanisms of silicon, wide-bandgap semiconductor, and ultra-wide-bandgap semiconductor power devices with different structures under various operating conditions, extracts key factors for device-level thermoelectric management, and provides more details and factual evidence regarding process thermal characteristics. This offers more new and valuable insights for the thermoelectric co-design technology of such heat-sensitive devices with high reliability requirements, significantly improving device lifespan, and further leveraging their superior electrical performance (as suggested by Bariga figure of merit) to stand out in large-scale commercialization.

[0121] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. A measurement method combining nano- and micro-scale non-contact in-situ optical-thermal characterization techniques, characterized in that, include: Obtain the parameters and characterization measurement requirements of the device under test; The parameters and characterization measurement requirements information represent the size, temperature range, temperature area, measurement accuracy, and steady-state power consumption of the device under test; When the parameters and characterization measurement requirements are the first type of test requirements, the temperature characterization measurement of the device under test is performed by infrared thermal imaging. When the parameters and characterization measurement requirements are the second type of test requirements, the temperature characterization measurement of the device under test is performed using thermal reflection imaging and nanoparticle-based Raman thermal characterization. The nanoparticle-based Raman thermal characterization measure the temperature of a specific area of ​​the device under test by measuring the change in the Raman displacement of the nanoparticles attached to the surface of the device under test. When the parameters and characterization measurement requirements are the third type of test requirements, the temperature characterization measurement of the device under test is performed using thermal reflection imaging, Raman thermal characterization, and nanoparticle-based Raman thermal characterization. The first type of test requirements are: the size of the device under test is greater than or equal to a preset size, the temperature measurement range is a preset range, the measurement accuracy is a first preset accuracy, and the temperature measurement area is the concentrated heat source area of ​​the device; when the parameters and characterization measurement requirements are the first type of test requirements, the temperature characterization measurement of the device under test is performed by infrared thermal imaging, including: controlling the device under test to be under the measured steady-state power consumption, characterizing and measuring the surface temperature of the device under test by infrared thermal imaging, and determining the concentrated heat source area of ​​the device under test based on the surface temperature; The second type of test requirements are: the size of the device under test (DUT) is smaller than a preset size; the structure of the DUT is a lateral structure; the temperature distribution of the DUT is characterized and measured under the measured steady-state power consumption; the measurement accuracy is a second preset accuracy; the temperature measurement range is a preset range; and the temperature measurement area is a specific range area. When the parameters and characterization measurement requirements meet the second type of test requirements, the temperature characterization measurement of the DUT is performed using thermal reflection imaging and nanoparticle-based Raman thermal characterization, including: controlling the DUT to be under the measured steady-state power consumption; characterizing and measuring the metal surface temperature of the DUT using thermal reflection imaging; and characterizing and measuring the surface temperature of the DUT under the measured steady-state power consumption using nanoparticle-based Raman thermal characterization. The third type of test requirements are: the size of the device under test (DUT) is smaller than a preset size; the structure of the DUT is a vertical structure; the measurement accuracy is a third preset accuracy; the temperature measurement range is a preset range; and the temperature measurement area is a concentrated heat source area. When the parameters and characterization measurement requirements meet the third type of test requirements, the temperature characterization measurement of the DUT is performed using thermal reflection imaging, Raman thermal characterization, and nanoparticle-based Raman thermal characterization. This includes: controlling the DUT to be under the measured steady-state power consumption; characterizing and measuring the metal surface temperature using thermal reflection imaging; characterizing and measuring the uniform thickness temperature of the semiconductor material region of the DUT under the measured steady-state power consumption using Raman thermal characterization; and characterizing and measuring the surface temperature of the DUT under the measured steady-state power consumption using nanoparticle-based Raman thermal characterization.

2. The measurement method of the combination of nano- and micro-scale non-contact in-situ optical and thermal characterization techniques according to claim 1, characterized in that, The temperature characterization measurement of the device under test using thermal reflection imaging, Raman thermal characterization, and nanoparticle-based Raman thermal characterization includes: The surface temperature of the metal of the device under test is characterized by thermal reflectance imaging. The device under test is controlled at a preset initial temperature, and Raman spectra of the semiconductor material region of the device under test are collected using a Raman spectrometer and a sealed high-temperature cavity. The Raman shift at the preset initial temperature is determined based on the measured Raman spectra. Raman spectra of the semiconductor material region of the device under test are collected at multiple preset temperatures using a Raman spectrometer and a sealed high-temperature cavity. Based on the Raman spectra, the prior relationship between the Raman shift change of the semiconductor device and temperature is determined. The multiple preset temperatures include the preset initial temperature. The device under test is controlled to be under steady-state power consumption, and Raman spectra of the semiconductor material region of the device under test are collected using a Raman spectrometer and a sealed high-temperature cavity. The Raman shift under steady-state power consumption is determined based on the collected Raman spectra. Based on the Raman displacement at the preset initial temperature, the Raman displacement under the measured steady-state power consumption, and the prior relationship between the Raman displacement change and temperature of the semiconductor device, the uniform thickness temperature of the semiconductor material region of the device under test is characterized. The device under test is controlled at a preset initial temperature, and Raman spectra of nanoparticles attached to the surface of the device under test are collected using a Raman spectrometer and a sealed high-temperature chamber. The Raman shift of the nanoparticles at the preset initial temperature is determined based on the collected Raman spectra. Raman spectra of nanoparticles attached to the surface of the device under test are collected at multiple preset temperatures using a Raman spectrometer and a sealed high-temperature chamber. Based on the Raman spectra of the nanoparticles, the prior relationship between the Raman shift change of the nanoparticles and the temperature is determined. The multiple preset temperatures include the preset initial temperature. The device under test is controlled to be under steady-state power consumption, and the Raman spectrum of the nanoparticles on the surface of the device under test is collected by a Raman spectrometer and a sealed high-temperature cavity. The Raman shift of the nanoparticles under steady-state power consumption is determined based on the measured Raman spectrum. The surface temperature of the device under test is characterized by the Raman displacement of the nanoparticles at the preset initial temperature, the Raman displacement of the nanoparticles under steady-state power consumption, and the prior relationship between the change in Raman displacement of the nanoparticles and temperature.

3. The measurement method of the combination of nano- and micro-scale non-contact in-situ optical and thermal characterization techniques according to claim 2, characterized in that, The device under test (DUT) is placed on a heat dissipation platform with electrical and thermal conductivity and temperature control functions within a sealed high-temperature cavity; the Raman spectra of nanoparticles attached to the surface of the DUT are collected using a Raman spectrometer and a sealed high-temperature cavity at multiple preset temperatures, including: By controlling the temperature of the heat dissipation platform inside the sealed high-temperature cavity, the device under test on the heat dissipation platform is controlled to be at a preset initial temperature, and the Raman spectrum of the nanoparticles at the preset initial temperature is collected. The temperature of the heat sink is raised to a first temperature and held for a period of time. The Raman spectrum of the nanoparticles at the first temperature is then collected. The temperature of the heat sink is then raised to a second temperature and held for a period of time. The Raman spectrum of the nanoparticles is then collected again. This measurement is repeated until the temperature of the heat sink reaches a preset maximum temperature, thus obtaining the Raman spectra of the nanoparticles at multiple preset temperatures. The preset initial temperature and the first temperature, as well as the first temperature and the second temperature, have the same temperature difference.

4. The measurement method of the combination of nano- and micro-scale non-contact in-situ optical and thermal characterization techniques according to claim 2, characterized in that, The multiple preset temperatures include: a preset initial temperature, a preset maximum temperature, and multiple different temperatures with the same temperature difference; the determination of the prior relationship between the Raman shift change of the nanoparticles and temperature based on the Raman spectrum of the nanoparticles includes: By fitting the Raman spectrum of nanoparticles at each preset temperature using a preset function, the Raman shifts of the characteristic peaks of nanoparticles at each temperature are obtained. The difference between the Raman displacement of the nanoparticles at each preset temperature and the Raman displacement of the nanoparticles at the preset initial temperature is determined to obtain the change in Raman displacement of the nanoparticles at each preset temperature. Linear fitting is performed on the multiple preset temperatures and the corresponding changes in the Raman displacement of the nanoparticles to obtain a standard curve of Raman displacement change of nanoparticles versus temperature, which serves as the prior correspondence between the Raman displacement change of nanoparticles and temperature.

5. The measurement method of the combination of nano- and micro-scale non-contact in-situ optical and thermal characterization techniques according to claim 2, characterized in that, The Raman displacement of the nanoparticles at the preset initial temperature, the Raman displacement of the nanoparticles under steady-state power consumption, and the prior relationship between the change in Raman displacement of the nanoparticles and temperature characterize the surface temperature of the device under test, including: The difference between the Raman displacement of the nanoparticles at the preset initial temperature and the Raman displacement of the nanoparticles under steady-state power consumption is determined to obtain the change in Raman displacement of the nanoparticles under steady-state power consumption. From the prior relationship between the Raman displacement change of nanoparticles and temperature, the temperature corresponding to the Raman displacement change of nanoparticles under steady-state power consumption is determined, and this temperature is taken as the surface temperature of the device under test.

6. The measurement method of the combination of nano- and micro-scale non-contact in-situ optical and thermal characterization techniques according to claim 1, characterized in that, The nanoparticles are highly temperature-sensitive nanoparticles, including any one of the following: anatase titanium dioxide microparticles with a purity of at least 99.8%, diamond particles with a purity of at least 99%, aluminum nitride particles with a purity of at least 99.5%, alumina particles with a purity of at least 99.99%, and boron nitride particles with a purity of at least 99.5%.

Images