Wafer carrying device and wafer surface flatness control method

Abstract

The embodiment of the present disclosure relates to the semiconductor field, and provides a wafer carrying device and a wafer surface flatness control method, wherein the wafer carrying device comprises: a first carrying table comprising a plurality of first through holes; a second carrying table arranged on the first carrying table, the second carrying table comprising a plurality of second through holes, each second through hole being communicated with a first through hole, and a support column being arranged in each second through hole, the second carrying table being used for carrying a wafer, wherein the stacking direction of the first carrying table and the second carrying table is a preset direction; and a plurality of adjusting modules, each adjusting module being connected with a first through hole, and the adjusting module being used for driving the support column to move along the preset direction to adjust the distance between the support column and the first carrying table, and the embodiment of the present disclosure is at least beneficial to improving the flatness of the wafer surface by driving the support column to move through the adjusting module.

Description

Technical Field

[0001] This disclosure relates to the semiconductor field, and in particular to a wafer carrier device and a method for controlling the flatness of a wafer surface. Background Technology

[0002] A wafer is a chip used to manufacture semiconductor integrated circuits. It is called a wafer because of its circular shape. Various circuit element structures can be fabricated on a wafer to become integrated circuit products with specific electrical functions.

[0003] The manufacturing steps of integrated circuit products typically include: wafer fabrication, masking, etching, doping, testing, and packaging. The mask can be formed by creating a photoresist layer, etc. During the mask formation process, an uneven photoresist layer is formed, which can affect subsequent process steps. Summary of the Invention

[0004] This disclosure provides a wafer carrier device and a method for controlling the flatness of the wafer surface, which at least helps to improve the flatness of the film layer formed on the wafer surface.

[0005] According to some embodiments of this disclosure, one aspect of this disclosure provides a wafer carrier device, including: a first carrier stage including a plurality of first through holes; a second carrier stage disposed on the first carrier stage, the second carrier stage including a plurality of second through holes, each second through hole communicating with a first through hole, each second through hole having a support post disposed therein, the second carrier stage being used to carry a wafer, wherein the stacking direction of the first carrier stage and the second carrier stage is a preset direction; and a plurality of adjustment modules, each adjustment module being connected to a first through hole, the adjustment module being used to drive the support post to move along the preset direction to adjust the distance between the support post and the first carrier stage.

[0006] In addition, the adjustment module includes: an air supply module, which is connected to the first through hole and is used to provide airflow along the preset direction; and an airflow adjustment module, which is used to adjust the airflow rate provided by the air supply module.

[0007] In addition, the airflow adjustment module also includes a gas flow meter, which is used to detect the gas flow rate of the air supply module.

[0008] In addition, the adjustment module includes: a movable support column located in the first through hole, the support column being used to support the support column; and a drive unit connected to the support column, used to push or pull the support column back.

[0009] In addition, in a direction perpendicular to the preset direction, the projected width of the second through hole on the surface of the wafer carrier is greater than the projected width of the first through hole on the surface of the wafer carrier.

[0010] In addition, in the preset direction, the thickness of the support is less than or equal to the depth of the second through hole.

[0011] In addition, the support column includes a frustum-shaped support column, and the width of the support column gradually decreases in the direction from the first support platform to the second support platform.

[0012] In addition, the second through hole includes a flat area and a recessed area. The recessed area is located on the flat area, and in the direction perpendicular to the preset direction, the width of the recessed area is smaller than the width of the flat area. The bottom width of the support is greater than the top width of the recessed area, and the top width of the support is smaller than the top width of the recessed area.

[0013] Additionally, it includes a detection module electrically connected to the adjustment module to adjust the adjustment module to move the support column along the preset direction according to the flatness of the wafer surface.

[0014] According to some embodiments of this disclosure, another aspect of this disclosure provides a method for controlling the flatness of a wafer surface, comprising: providing a wafer, the wafer surface including a photoresist layer; providing the wafer support device, the wafer support device including: a first support stage including a plurality of first through holes; a second support stage disposed on the first support stage, the second support stage including a plurality of second through holes, each second through hole communicating with a first through hole, each second through hole having a support post disposed therein, the wafer being supported by the second support stage, wherein the stacking direction of the first support stage and the second support stage is a preset direction; a plurality of adjustment modules, each adjustment module connected to a first through hole, the adjustment module being used to drive the support post to move along the preset direction to adjust the distance between the support post and the first support stage; providing a detection module, the detection module being electrically connected to the adjustment module, the detection module detecting the flatness of the top surface of the photoresist layer; and adjusting the height of the top surface of the support post relative to the top surface of the second support stage based on the flatness of the top surface of the photoresist layer.

[0015] In addition, in the preset direction, the height of the pillar is adjusted until the flatness of the top surface of the photoresist layer is less than or equal to 70nm.

[0016] Additionally, it includes: providing a transmitting module that emits a laser beam, and the laser beam generates a reflected signal after irradiating the photoresist layer; providing a receiving module that receives the reflected signal to obtain the flatness of the photoresist layer surface; the transmitting module and the receiving module together constitute the detection module.

[0017] In addition, the photoresist layer includes several regions, and each pillar adjusts the height of each region. The laser beam is used to irradiate different regions to obtain the flatness between different regions. The receiving module controls the adjustment module to drive the pillar to adjust the height of different regions.

[0018] Additionally, it includes: a gas supply module connected to the first through hole, which provides airflow along the preset direction; and an airflow adjustment module that adjusts the airflow rate provided by the gas supply module; the gas supply module and the airflow adjustment module together form the adjustment module.

[0019] Additionally, it includes: providing a movable support column located within the first through hole, supporting the support column; providing a drive unit connected to the support column, pushing or pulling the support column; the support column and the drive unit together form the adjustment module.

[0020] This disclosure provides a wafer carrier device and a method for controlling wafer surface flatness, comprising: a first carrier stage and a second carrier stage stacked together, wherein the first carrier stage includes a plurality of first through holes and the second carrier stage includes a plurality of second through holes, the first through holes being connected to the second through holes, and a support column being provided in each second through hole for supporting the wafer; the wafer carrier device also includes a plurality of adjustment modules, each adjustment module being connected to a first through hole, the adjustment modules adjusting the height of the support column in the second through hole, thereby changing the support surface of the wafer bottom, causing the wafer to undergo slight deformation under the influence of its own gravity and / or the support force of the support column, thereby adjusting the flatness of the wafer surface and reducing the impact on subsequent processes. Attached Figure Description

[0021] One or more embodiments are illustrated by way of example with reference to the accompanying drawings. These illustrations do not constitute a limitation on the embodiments, and unless otherwise stated, the figures in the drawings are not to be limited by scale.

[0022] Figure 1 This is a schematic diagram of a wafer carrier device provided in one embodiment of the present disclosure;

[0023] Figure 2 This is another schematic diagram of a wafer carrier device provided in one embodiment of the present disclosure;

[0024] Figure 3 This is a partial structural schematic diagram of a wafer carrier device provided in an embodiment of the present disclosure;

[0025] Figure 4 A flowchart illustrating a method for controlling wafer surface flatness according to an embodiment of this disclosure;

[0026] Figures 5 to 8 This is a schematic diagram of the structure corresponding to each step of a method for controlling wafer surface flatness according to an embodiment of the present disclosure;

[0027] Figures 9 to 12 This invention provides a schematic diagram of the structure corresponding to each step of another method for controlling wafer surface flatness according to an embodiment of the present disclosure. Detailed Implementation

[0028] This disclosure provides a wafer carrier device and a method for controlling the flatness of the wafer surface. The method adjusts the flatness of the wafer surface by controlling the distance between the support column and the first carrier stage through an adjustment module.

[0029] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been provided in the embodiments of this disclosure to facilitate a better understanding of the disclosure. However, the technical solutions claimed in this disclosure can be implemented even without these technical details and various variations and modifications based on the following embodiments.

[0030] Figures 1 to 3 This is a schematic diagram of the structure of the wafer carrier device provided in an embodiment of this disclosure.

[0031] refer to Figures 1 to 3 The wafer carrier device includes: a first carrier stage 100, including a plurality of first through holes 110; a second carrier stage 120, disposed on the first carrier stage 100, the second carrier stage 120 including a plurality of second through holes 130, each second through hole 130 communicating with each first through hole 110, each second through hole 130 having a support post 131 therein, the second carrier stage 120 being used to carry the wafer, wherein the stacking direction of the first carrier stage 100 and the second carrier stage 120 is a preset direction X; a plurality of adjustment modules 140, each adjustment module 140 being connected to a first through hole 110, the adjustment module 140 being used to drive the support post 131 to move along the preset direction X, so as to adjust the distance between the support post 131 and the first carrier stage 100.

[0032] It is understood that the wafer can be supported by the support pillar 131. By lowering the height of the support pillar 131, the support pillar 131 is no longer in contact with part of the wafer, so that the wafer undergoes slight deformation under the action of gravity, thereby making the wafer surface relatively flat. When the support pillar 131 is no longer moving, the wafer re-contacts the support pillar 131, so that the wafer no longer deforms due to gravity, thus ensuring that the flatness of the wafer remains unchanged. By raising the height of the support pillar 131, the support pillar 131 rises, and part of the wafer undergoes slight deformation under the action of the supporting force, thereby making the wafer surface relatively flat. In some embodiments, the flatness of the wafer surface can also be changed by slowly lowering or raising the height of the support pillar 131, so that the wafer gradually undergoes slight deformation.

[0033] For details, please refer to Figure 1 In some embodiments, the adjustment module 140 may include: an air supply module 150, which is connected to the first through hole 110 and is used to provide airflow along a preset direction X; and an airflow adjustment module 160, which is used to adjust the airflow rate provided by the air supply module 150.

[0034] It is understood that the air supply module 150 provides airflow along a preset direction X, and the gas fills the first through hole 110 and part of the second through hole 130. The pressure of the gas provides support to the support column 131. The position height of the support column 131 can be increased by increasing the airflow rate and decreased by decreasing the airflow rate. The airflow adjustment module 160 can control the air supply module 150 to start working and control the distance between the support column 131 and the first support platform 100 by controlling the pressure of the supplied airflow. By reducing the gas flow rate to lower the height of the support pillar 131, the support pillar 131 is no longer in contact with the wafer. The wafer deforms under the influence of gravity until it experiences internal stress or re-enters contact with the support pillar 131. The support pillar 131 provides a certain supporting force to the wafer. Alternatively, the gas flow rate can be increased to increase the height of the support pillar 131, causing the portion of the wafer in contact with the corresponding support pillar 131 to deform under the pressure of the gas flow. The flatness of the wafer surface can be adjusted by changing the gas flow rate. In some embodiments, the flatness of the wafer surface can also be changed by slowly lowering the height of the support pillar 131, causing the wafer to undergo gradual micro-deformation.

[0035] It should be noted that in some embodiments, the adjustment module 140 includes an air supply module 150 and an airflow adjustment module 160. The space enclosed by the first support platform 100, the air supply module 150, the support column 131 and the second support platform 120 can be kept relatively sealed to ensure the support force of the gas.

[0036] To ensure relative sealing, at least a portion of the support column 131 has a width equal to the width of the second through hole 130 in a direction perpendicular to the preset direction X. This reduces gas leakage during the adjustment of the support column 131, thereby increasing the stability of the gas pressure. In some embodiments, the width of the support column 131 decreases along the direction from the first support platform 100 to the second support platform 120. During the increase of gas flow, a portion of the support column 131 is higher than the top surface of the second through hole 130. If the width of the support column 131 decreases along the direction from the second support platform 120 to the first support platform 100, and the support column 131 with a width equal to the width of the second through hole 130 is higher than the second through hole 130, the part of the structure that reduces gas leakage fails, and it cannot effectively reduce gas leakage to increase the stability of gas pressure.

[0037] This embodiment does not limit the gas supply module 150 and the airflow adjustment module 160; it only needs to achieve the purpose of providing gas and adjusting the gas flow rate.

[0038] In some embodiments, the airflow adjustment module 160 further includes a gas flow meter 161, which is used to detect the gas flow rate of the airflow provided by the gas supply module 150.

[0039] It is understandable that the gas supply module 150 can be controlled according to the specific parameters of the gas flow meter 161. The gas flow meter 161 can more accurately control the air flow rate provided by the gas supply module 150, thereby more accurately controlling the position and height of the support column 131.

[0040] In some embodiments, the airflow adjustment module 160 controls the gas flow rate supplied by the gas supply module 150 based on the specific parameters of the gas flow meter 161 and the flatness of the wafer surface. That is, when the height of a portion of the wafer surface is high, the position height of the support pillar 131 corresponding to the higher portion of the wafer is reduced, so that the support pillar 131 is spaced from the wafer, causing the wafer to deform and thus reducing the surface height of this portion of the wafer, thereby improving the flatness of the wafer surface. The specific height of the support pillar 131 to be reduced can be calculated by the current gas flow rate fed back by the gas flow meter 161 and the height value to be reduced, and the gas flow meter 161 can accurately provide feedback on whether the gas flow rate has been adjusted to the required flow rate, thereby controlling the position height of the support pillar 131 more precisely.

[0041] Adjusting the flatness of the wafer surface by adjusting the gas flow rate is easy to achieve. In some embodiments, the gas supply module 150 can provide nitrogen to support the support column 131, and the nitrogen can also form a protective atmosphere for the wafer, and the nitrogen will not pollute the wafer or the atmosphere.

[0042] refer to Figure 2In other embodiments, the adjustment module 140 may include a movable support column 170 located in the first through hole 110 and used to support the support column 131; and a drive unit 180 connected to the support column 170 for pushing or pulling the support column 170.

[0043] Understandably, the drive unit 180 can control the position and height of the support column 170 in the preset direction X. When it is necessary to raise the position and height of the support column 131, the drive unit 180 is controlled to push the support column 170 to move in the direction from the first support platform 100 to the second support platform 120. The support column 170 provides support force to the support column 131 to support the support column 131 and thus support the wafer. When it is necessary to lower the position and height of the support column 131, the drive unit 180 is controlled to pull back the support column 170 so that the support column 170 moves in the direction from the second support platform 120 to the first support platform 100. Under the action of gravity, the support column 131 follows the support column 170 to move in the direction from the second support platform 120 to the first support platform 100, so that there is a gap between the wafer and the support column 131. The part of the wafer separated from the support column 131 loses support and deforms under the action of gravity, thereby improving the flatness of the wafer surface.

[0044] In some embodiments, the adjustment module 140 may include a support column 170 and a drive unit 180. When the support column 131 is displaced, it needs to overcome the frictional force between the support column 131 and the second support platform 120 exposed by the second through hole 130. In a direction perpendicular to the preset direction X, a support column 131 with a partial width smaller than the width of the second through hole 130 may be provided. By reducing the width of the support column 131, the frictional force that needs to be overcome to push the support column 131 is reduced. In some embodiments, the width of the support column 131 may also be set to be smaller than the width of the second through hole 130.

[0045] This embodiment does not limit the shape of the support pillar 131. It only requires that the width of the support pillar 131 is less than or equal to the width of the second through hole 130 in the direction perpendicular to the preset direction X. It is understood that when the width of the support pillar 131 is greater than the width of the second through hole 130, after the adjustment is completed and the adjustment module 140 is closed, a portion of the thickness of the support pillar 131 will still be located on the second through hole 130, causing the adjusted wafer to deform under the support of the support pillar 131, thus reducing the adjustment effect.

[0046] Adjusting the flatness of the wafer surface using the support column 170 and the drive unit 180 is easier to achieve, and the support column 131 is more stable using the support column 170. In some embodiments, the drive unit 180 can be a stepper motor. The cooperation between the stepper motor and the support column 170 can make the adjustment of the support column 170 more precise, thereby improving the accuracy of adjusting the flatness of the wafer surface.

[0047] In some embodiments, the adjustment module 140 can also adjust the distance between the support column 131 and the first support platform 100 by means of magnetic levitation, that is, a float structure is set in the support column 131, and the distance between the support column 131 and the first support platform 100 is adjusted by adjusting the magnetic field of the adjustment module 140.

[0048] refer to Figure 1 and Figure 2 In some embodiments, the projected width of the second through hole 130 on the surface of the carrier device is greater than the projected width of the first through hole 110 on the surface of the wafer carrier device in a direction perpendicular to the preset direction X. By setting the width of the second through hole 130 to be greater than the width of the first through hole 110, the support 131 can be prevented from falling into the first through hole 110, and it is also convenient to cooperate with the adjustment module 140.

[0049] It is understood that, in some embodiments, references Figure 1 The adjustment module 140 includes an air supply module 150 and an airflow adjustment module 160. At least a portion of the support column 131 has a width not less than the width of the first through hole 110, and correspondingly, at least a portion of the second through hole 130 has a width greater than the width of the first through hole 110. This can be used to prevent the support column 131 from falling into the first through hole 110 when the wafer carrier is not in use. In other embodiments, refer to... Figure 2 The adjustment module 140 includes a support column 170 and a drive unit 180. By setting the width of the second through hole 130 to be greater than the width of the first through hole 110, the support column 170 can easily pass through the first through hole 110 and enter the second through hole 130, thereby adjusting the distance between the support column 131 and the first support platform 100.

[0050] In some embodiments, in a preset direction X, the thickness of the support column 131 is less than or equal to the depth of the second through hole 130.

[0051] It is understood that the thickness of the support pillar 131 is the height of the support pillar 131 itself. In this embodiment of the present disclosure, the wafer undergoes a slight deformation by changing the position and height of the support pillar 131 that supports the wafer, thereby adjusting the flatness of the wafer surface. After use, there is still a portion of the thickness of the support pillar 131 that is higher than the second through hole 130. Under the influence of the support force provided by the support pillar 131, the wafer undergoes a slight deformation again, causing the already adjusted wafer to change again, which is not conducive to adjusting the flatness of the wafer.

[0052] In some embodiments, the support column 131 includes a frustum-shaped support column 131, and the width of the support column 131 gradually decreases in the direction from the first support platform 100 toward the second support platform 120. As the width of the support column 131 gradually decreases, the weight of the support column 131 also decreases, thereby allowing less gas to be introduced to move the support column 131.

[0053] In some embodiments, reference Figure 1 By reducing the contact area between the support column 131 and the second support platform 120, the frictional force that the support column 131 needs to overcome to move is reduced. Furthermore, by reducing a portion of the width of the support column 131, its own weight can be reduced. The frustum-shaped support column 131 reduces the resistance that the moving support column 131 needs to overcome while maintaining a relatively sealed wafer support device. (Reference) Figure 2 By reducing the contact area between the support column 131 and the second support platform 120, the frictional force that the support column 131 needs to overcome to move is reduced. Furthermore, by reducing part of the width of the support column 131, the weight of the support column 131 itself can be reduced. The frustum-shaped support column 131 can increase the contact area between the support column 131 and the support column 170, thereby making it easier for the support column 170 to push the support column 131.

[0054] In some embodiments, the support can also be other shapes, such as convex or stepped. By reducing the contact area between the support and the inner wall of the second through hole 130, the frictional force that the support needs to overcome to move can be reduced, thereby reducing the time required for adjustment.

[0055] refer to Figure 3 In some embodiments, the second through hole 130 may include a flat area 200 and a recessed area 190. The recessed area 190 is located on the flat area 200 and is perpendicular to a preset direction X. The width of the recessed area 190 is smaller than the width of the flat area 200. The bottom width of the support column 131 is larger than the top width of the recessed area 190, and the top width of the support column 131 is smaller than the top width of the recessed area 190.

[0056] It is understood that the second support platform 120 restricts the pillar 131 to prevent the bottom surface of the pillar 131 from exceeding the top surface of the second through hole 130 during wafer adjustment. Due to the shape restriction of the second through hole 130 and the pillar 131, the pillar 131 has a maximum range of movement as it moves along the first support platform 100 toward the second support platform 120. In some embodiments, the maximum range of movement is the height of the flat area 200. The recessed area 190 can be provided to prevent the pillar 131 from falling off the top surface of the second support platform 120. In some embodiments, both the support column 131 and the recessed area 190 are frustum-shaped, and the top surface width of the support column 131 is smaller than the top surface width of the recessed area 190. In other embodiments, the recessed area 190 can be frustum-shaped, and the support column 131 can be convex, with the top surface width of the support column 131 being smaller than the top surface width of the recessed area 190. This disclosure does not limit the shapes of the support column 131 and the recessed area 190; it only requires that they cooperate to ensure that, during adjustment, the bottom surface of the support column 131 does not exceed the top surface of the second through hole 130.

[0057] refer to Figure 1 and Figure 2 In some embodiments, it may also include: a detection module 210, which is electrically connected to the adjustment module 140 to adjust the adjustment module 140 to drive the support column 131 to move along a preset direction X according to the flatness of the wafer surface.

[0058] The detection module 210 may include: a scanning mirror, which has a transmitting end and a receiving end. The transmitting end emits a laser, which is reflected when it hits the wafer surface. The laser is received by the receiving end after reflection. The flatness of the wafer surface is detected by comparing the signals from the transmitting end and the receiving end. The adjustment module 140 is controlled to move the support column 131 according to the flatness of the wafer surface, and the distance by which the adjustment module 140 moves the support column 131 is also controlled.

[0059] This disclosure provides a wafer carrier device, including a first carrier stage 100 and a second carrier stage 120 stacked together. The first carrier stage 100 includes a plurality of first through holes 110, and the second carrier stage 120 includes a plurality of second through holes 130. The first through holes 110 and the second through holes 130 are connected. A support column 131 is provided in each second through hole 130. The device also includes a plurality of adjustment modules 140, each adjustment module 140 corresponding to a support column 131. The height of the support column 131 in a preset direction X is adjusted by the adjustment module 140, thereby compensating the top surface of the wafer and adjusting the flatness of the wafer surface.

[0060] This disclosure also provides a method for controlling wafer surface flatness, which can utilize the wafer carrier device provided in the foregoing embodiments. The method for controlling wafer surface flatness provided in this disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that parts that are the same as or corresponding to the foregoing wafer carrier device can be referred to the corresponding descriptions above, and will not be repeated hereafter. Figures 4 to 12 This is a schematic diagram of the structure corresponding to the wafer surface flatness control method provided in the embodiments of this disclosure.

[0061] For details, please refer to Figure 4 In some embodiments, the method for controlling wafer surface flatness includes the following steps:

[0062] Step S11: Provide a wafer 300, the surface of which may include a photoresist layer 310.

[0063] In some embodiments, wafer 300 may be a silicon wafer, germanium wafer, or silicon-germanium wafer, etc., and photoresist layer 310 may be formed on the surface of wafer 300 by spin coating process. When forming photoresist layer 310, due to the influence of process technology, the surface of photoresist layer 310 is not smooth. For example, a large height difference may be formed between the central region and the edge region of photoresist layer 310, which will affect subsequent process steps.

[0064] Step S12: Provide a wafer carrier device, refer to Figure 5 The wafer carrier device includes: a first carrier stage 320, including a plurality of first through holes 330; a second carrier stage 340, disposed on the first carrier stage 320, the second carrier stage 340 including a plurality of second through holes 350, each second through hole 350 communicating with a first through hole 330, and each second through hole 350 having a support post 360 therein, the wafer 300 being carried by the second carrier stage 340, wherein the stacking direction of the first carrier stage 320 and the second carrier stage 340 is a preset direction X; and a plurality of adjustment molds. Block 370, each adjustment module 370 is connected to a first through hole 330, the adjustment module 370 is used to drive the support column 360 to move along a preset direction X to adjust the distance between the support column 360 and the first support platform 320; a detection module 380 is provided, which is electrically connected to the adjustment module 370, and the flatness of the top surface of the photoresist layer 310 is detected by the detection module 380; based on the flatness of the top surface of the photoresist layer 310, the height of the top surface of the support column 360 relative to the top surface of the second support platform 340 is adjusted.

[0065] The wafer 300 is supported by pillars 360, with each pillar 360 contacting a portion of the wafer 300 to provide support. Lowering the height of the pillars 360 prevents partial contact between the wafer 300 and the pillars, allowing the wafer 300 and photoresist layer 310 to undergo slight deformation under gravity, thus adjusting the flatness of the photoresist layer 310 surface. Alternatively, increasing the height of the pillars 360 causes partial deformation of the wafer 300 and photoresist layer 310 under the supporting force of the pillars 360, thereby adjusting the flatness of the photoresist layer 310 surface. It should be noted that because the wafer 300 has a certain degree of warpage, the warpage changes during the formation of the photoresist layer 310. Therefore, adjusting the height of the pillars 360 relative to the first support stage 320 allows for adjustment of the wafer 300's flatness.

[0066] Step S13: Provide a detection module 380, which is electrically connected to the adjustment module 370. The detection module 380 detects the flatness of the top surface of the photoresist layer 310. Based on the flatness of the top surface of the photoresist layer 310, adjust the height of the top surface of the support column 360 relative to the top surface of the second support platform 340.

[0067] In some embodiments, the method further includes: providing an emitting module 381 to emit a laser beam, and generating a reflected signal after the laser beam irradiates the photoresist layer 310; providing a receiving module 382 to receive the reflected signal to obtain the flatness of the surface of the photoresist layer 310; the emitting module 381 and the receiving module 382 constitute a detection module 380.

[0068] The emitting module 381 emits a laser beam at a certain angle. When it encounters an object, the laser beam is reflected and reflected to the receiving module 382. A light spot is formed on the receiving module 382. The flatness of the photoresist layer 310 surface is calculated based on the position of the light spot formed on the receiving module 382 and the distance between the emitting module 381 and the receiving module 382. The flatness of the photoresist layer 310 surface can be monitored in real time by the detection module 380, thereby allowing for more precise adjustment of the photoresist layer 310.

[0069] The detection module 380 detects the flatness of the photoresist layer 310 surface and feeds back the corresponding flatness to the adjustment module 370. The adjustment module 370 adjusts the position and height of the support pillar 360 according to the flatness of the photoresist layer 310 surface, and makes corresponding adjustments according to the real-time feedback results of the detection module 380, so as to adjust the flatness of the wafer 300 surface.

[0070] In some embodiments, the photoresist layer 310 includes several regions, and each pillar 360 adjusts the height of each region. A laser beam is used to irradiate different regions to obtain the flatness between different regions. The receiving module 382 controls the adjustment module 370 to drive the pillar 360 to adjust the height of different regions.

[0071] Understandably, the photoresist layer 310 can be divided into regions. For example, the photoresist layer 310 can be divided according to the photoresist layer 310 that can be affected by the pillar 360. That is, the height of each pillar 360 will affect the height of the photoresist layer 310 region corresponding to each pillar 360. When the height of a pillar 360 is higher than the height of the pillars 360 around it, the photoresist layer 310 will undergo a slight deformation under the supporting force of the pillar 360 and the gravity of the photoresist layer 310, so that the height of the region corresponding to the pillar 360 increases. The flatness of the surface of the photoresist layer 310 can be controlled by adjusting the height of different pillars 360.

[0072] In the preset direction X, the flatness of the photoresist layer 310 surface is adjusted by raising the lower portion of the surface area and lowering the higher portion of the surface area. (Reference) Figures 5 to 8 ,in Figure 5 and Figure 6 A schematic diagram of a method for controlling wafer surface flatness where the height of the edge portion of the photoresist layer 310 is higher than the height of the center portion; Figure 7 and Figure 8 This is a schematic diagram of a method for controlling the flatness of the wafer surface when the height of the central portion of the photoresist layer 310 is higher than the height of the edge portion.

[0073] In some embodiments, the system further includes: providing an air supply module 371, which is connected to the first through hole 330 and provides airflow along a preset direction X; providing an airflow adjustment module 372, which adjusts the airflow rate provided by the air supply module 371; and the air supply module 371 and the airflow adjustment module 372 together form an adjustment module 370.

[0074] It is understandable that the air supply module 371 provides airflow along the preset direction X, the airflow provides support force to the support column 360, the airflow adjustment module 372 adjusts the airflow rate, thereby adjusting the height of the support column 360, and the airflow adjustment module 372 increases the airflow rate so that the support column 360 rises under the action of air pressure.

[0075] In some embodiments, the gas supplied by the gas supply module 371 can be a gas such as nitrogen that will not affect the wafer 300, and nitrogen will not pollute the air. At the same time, nitrogen can also protect the wafer 300 and prevent other impurities from falling on the wafer 300.

[0076] In some embodiments, the adjustment module 370 includes an air supply module 371 and an airflow adjustment module 372. After the wafer 300 is placed on the second support stage 340, the top surface of the photoresist layer 310 is detected by the detection module 380 to obtain the flatness of the top surface of the photoresist layer 310. Based on the flatness of the top surface of the photoresist layer 310 obtained by the detection module 380, the airflow adjustment module 372 is controlled. By increasing or decreasing the airflow provided by the air supply module 371, the height of a certain area of ​​the photoresist layer 310 is adjusted accordingly. When it is necessary to reduce the height of the photoresist layer 310, the airflow adjustment can be reduced. Module 372 controls the air supply module 371 to provide airflow, thereby reducing the height of the support column 360. The wafer 300 and photoresist layer 310 lose the support of the support column 360 and deform under the action of gravity, thus reducing the height of the wafer 300 and photoresist layer 310. When it is necessary to increase the height of the photoresist layer 310, the air supply module 372 can be added to control the air flow of the air supply module 371, thereby reducing the height of the support column 360. The wafer 300 and photoresist layer 310 undergo slight deformation under the support of the support column 360 to adjust the flatness of the surface of the photoresist layer 310.

[0077] refer to Figure 5 and Figure 6 In some embodiments, the wafer 300 can be divided into a first region 500, a second region 510, and a third region 520. The photoresist layer 310 on the second region 510 is relatively flat, while the photoresist layers 310 corresponding to the first region 500 and the third region 520 are thicker. It is understood that to reduce the height of the photoresist layers 310 corresponding to the first region 500 and the third region 520, this can be achieved by reducing the airflow rate provided by the air supply module 371 corresponding to the first region 500 and the third region 520, and reducing the height of the support pillars 360 corresponding to the first region 500 and the third region 520. This allows the wafer 300 to deform under the influence of gravity, reducing the top surface height of the first region 500 and the third region 520, thereby adjusting the flatness of the photoresist layer 310 surface. Similarly, refer to... Figure 7 and Figure 8 The photoresist layer 310 corresponding to the first region 500 and the third region 520 is relatively thin. The flatness of the photoresist layer 310 surface can be adjusted by increasing the air flow rate provided by the air supply module 371 corresponding to the first region 500 and the third region 520.

[0078] In some embodiments, if the first region 500 and the third region 520 are relatively thick, the airflow rate provided by the air supply module 371 corresponding to the second region 510 can be increased to raise the height of the support pillar 360 corresponding to the second region 510. This allows the wafer 300 to deform under the support, thereby adjusting the flatness of the photoresist layer 310 surface. Similarly, if the photoresist layer 310 corresponding to the first region 500 and the third region 520 is relatively thin, the airflow rate provided by the air supply module 371 corresponding to the second region can be reduced to lower the height of the support pillar 360 corresponding to the second region 510. This allows the wafer 300 to deform under the influence of gravity, thereby adjusting the flatness of the photoresist layer 310 surface.

[0079] In some embodiments, when the detection module 380 detects that the flatness of the photoresist layer 310 surface reaches a threshold, it stops adjusting the height of the support pillar 360. In some embodiments, the threshold range for the flatness of the photoresist layer 310 surface is less than 70 nm, for example, 60 nm or 50 nm. It should be noted that the detection module 380 can detect each area on the photoresist layer 310, thereby obtaining the surface flatness of each area. When the difference in surface flatness between each area is less than 70 nm, the movement of the support pillar 360 will stop, thus achieving the surface flatness of the photoresist layer 310, which is beneficial for exposure alignment.

[0080] refer to Figures 9 to 12 ,in Figure 9 and Figure 10 The height of the edge portion of the photoresist layer 310 is higher than the height of the center portion; Figure 11 and Figure 12 The height of the center portion of the photoresist layer 310 is higher than the height of the edge portion. In some embodiments, it further includes: providing a movable support post 373, the support post 373 being located within the first through hole 330, and supporting the support column 360 via the support post 373; providing a drive unit 374, the drive unit 374 being connected to the support post 373, and pushing or pulling the support post 373 via the drive unit 374; the support post 373 and the drive unit 374 constitute an adjustment module 370.

[0081] refer to Figure 9 and Figure 10 The wafer can be divided into a first region 500, a second region 510, and a third region 520. The photoresist layer 310 on the second region 510 is relatively flat, while the photoresist layers 310 on the first region 500 and the third region 520 are thicker. (Refer to...) Figure 11 and Figure 12 The photoresist layer 310 corresponding to the first region 500 and the third region 520 is relatively thin.

[0082] It is understandable that the principle of adjusting the flatness of the photoresist layer 310 surface through the support column 373 and the drive unit 374 is similar to the principle of the air supply module 371 and the airflow adjustment module 372 described above. The support column 373 is used to provide support force to the support column 360. When the height of the area corresponding to the support column 360 is low, the height of the support column 360 is adjusted by raising the height of the support column 373 so that the height of the area corresponding to the support column 360 increases under the support of the support column 360. When the height of the area corresponding to the support column 360 is high, the height of the support column 360 is adjusted by pulling back the support column 373 so that the area corresponding to the support column 360 loses the support of the support column 360 and deforms under the action of gravity, thereby adjusting the flatness of the photoresist layer 310 surface.

[0083] In some embodiments, the driving unit 374 can adjust the top height of the support pillar 373 according to the flatness of the top surface of the photoresist layer 310 obtained by the detection module 380, thereby adjusting the flatness of the photoresist layer 310 surface. That is, after the detection module 380 obtains the flatness of the photoresist layer 310 surface, the driving unit 374 pushes or pulls back the support pillar 373. The distance between the driving unit 374 pushing or pulling back the support pillar 373 is adjusted according to the height of the corresponding area of ​​the support pillar 360. When the driving unit 374 pushes the support pillar 373, the height of the support pillar 360 increases, and the photoresist layer 310 deforms under the support of the support pillar 360. When the driving unit 374 pulls back the support pillar 373, the height of the support pillar 360 decreases, the wafer 300 and the photoresist layer 310 are separated from the support pillar 360, and the photoresist layer 310 deforms under its own gravity.

[0084] It should be noted that, for ease of understanding, Figure 6 , Figure 8 , Figure 10 and Figure 12 The deformation of a 300 nm wafer is more obvious. However, in practical applications, the deformation of a wafer is small, and the range of deformation is less than 30 nm, for example, 15 nm or 20 nm.

[0085] In some embodiments, in a preset direction X, the height of the pillar 360 is adjusted until the flatness of the top surface of the photoresist layer 310 is less than or equal to 70 nm.

[0086] When the flatness of the top surface of the photoresist layer 310 is less than or equal to 70nm, it can be considered that the surface of the photoresist layer 310 is relatively flat. By adjusting the flatness of the surface of the photoresist layer 310, it is beneficial to subsequent processes.

[0087] Stop adjusting the height of the support pillar 360 when the flatness of the top surface of the photoresist layer 310 is less than or equal to 70nm.

[0088] It should be noted that in some embodiments, the surface of the photoresist layer 310 may also be uneven. The flatness of the surface of the photoresist layer 310 is detected by the detection module 380, and the corresponding support pillar 360 is moved by the adjustment module 370 to adjust the flatness of the surface of the photoresist layer 310.

[0089] This disclosure provides a method for controlling the flatness of a wafer surface. A detection module 380 detects the flatness of the wafer 300 and the photoresist layer 310. Based on the flatness data obtained by the detection module 380, a control adjustment module 370 moves a support column 360 along a preset direction X. By adjusting the distance between the support column 360 and the first support platform 320, the flatness of the wafer 300 and the photoresist layer 310 is adjusted, thereby providing a good process foundation for subsequent processes.

[0090] Those skilled in the art will understand that the above embodiments are specific examples of implementing this disclosure, and in practical applications, various changes in form and detail may be made without departing from the spirit and scope of this disclosure. Any person skilled in the art can make their own modifications and alterations without departing from the spirit and scope of this disclosure; therefore, the scope of protection of this disclosure should be determined by the scope defined in the claims.

Claims

1. A wafer carrier device, characterized in that, include: The first support platform includes multiple first through holes; A second support platform is disposed on the first support platform. The second support platform includes a plurality of second through holes, each of which is connected to a first through hole. Each second through hole is provided with a support column. The second support platform is used to support a wafer. The surface of the wafer includes a photoresist layer. The stacking direction of the first support platform and the second support platform is a preset direction. Multiple adjustment modules, each of which is connected to a first through hole, are used to drive the support column to move along the preset direction to adjust the distance between the support column and the first support platform; The detection module is electrically connected to the adjustment module. The detection module is used to detect the flatness of the top surface of the photoresist layer. The adjustment module adjusts the height of the top surface of the support column relative to the top surface of the second support platform based on the flatness of the top surface of the photoresist layer.

2. The wafer carrier device according to claim 1, characterized in that, The adjustment module includes: An air supply module is connected to the first through hole and is used to provide airflow along the preset direction; An airflow adjustment module is used to adjust the airflow rate provided by the air supply module.

3. The wafer carrier device according to claim 2, characterized in that, The airflow adjustment module further includes a gas flow meter, which is used to detect the gas flow rate of the airflow provided by the gas supply module.

4. The wafer carrier device according to claim 1, characterized in that, The adjustment module includes: A movable support column, located within the first through hole, is used to support the support column; A drive unit, which is connected to the support column, is used to push or pull the support column back.

5. The wafer carrier device according to claim 1, characterized in that, In a direction perpendicular to the preset direction, the projected width of the second through hole on the surface of the wafer carrier is greater than the projected width of the first through hole on the surface of the wafer carrier.

6. The wafer carrier device according to claim 1, characterized in that, In the preset direction, the thickness of the support is less than or equal to the depth of the second through hole.

7. The wafer carrier device according to claim 1, characterized in that, The support column includes a frustum-shaped support column, and the width of the support column gradually decreases in the direction from the first support platform to the second support platform.

8. The wafer carrier device according to claim 1, characterized in that, The second through hole includes a flat area and a recessed area. The recessed area is located on the flat area, and in a direction perpendicular to the preset direction, the width of the recessed area is smaller than the width of the flat area. The bottom width of the support is greater than the top width of the recessed area, and the top width of the support is smaller than the top width of the recessed area.

9. A method for controlling the flatness of a wafer surface, characterized in that, include: A wafer is provided, the surface of which includes a photoresist layer; A wafer carrier device is provided, the wafer carrier device comprising: a first carrier stage including a plurality of first through holes; A second support platform is disposed on the first support platform. The second support platform includes a plurality of second through holes, each of which is connected to a first through hole. Each second through hole is provided with a support column. The wafer is supported by the second support platform. The stacking direction of the first support platform and the second support platform is a preset direction. Multiple adjustment modules, each of which is connected to a first through hole, are used to drive the support column to move along the preset direction to adjust the distance between the support column and the first support platform; A detection module is provided, which is electrically connected to the adjustment module. The detection module detects the flatness of the top surface of the photoresist layer. Based on the flatness of the top surface of the photoresist layer, the height of the top surface of the support column relative to the top surface of the second support platform is adjusted.

10. The method for controlling wafer surface flatness according to claim 9, characterized in that, In the preset direction, the height of the pillar is adjusted until the flatness of the top surface of the photoresist layer is less than or equal to 70 nm.

11. The method for controlling wafer surface flatness according to claim 9, characterized in that, Also includes: A transmitting module is provided, through which a laser beam is emitted, and the laser beam generates a reflected signal after irradiating the photoresist layer; A receiving module is provided to receive the reflected signal to obtain the flatness of the photoresist layer surface; The transmitting module and the receiving module together constitute the detection module.

12. The method for controlling wafer surface flatness according to claim 11, characterized in that, The photoresist layer includes several regions, and each pillar adjusts the height of each region. The laser beam irradiates different regions to obtain the flatness between the different regions. The receiving module controls the adjusting module to drive the pillar to adjust the height of the different regions.

13. The method for controlling wafer surface flatness according to claim 9, characterized in that, Also includes: A gas supply module is provided, which is connected to the first through hole, and provides airflow along the preset direction through the gas supply module; An airflow adjustment module is provided to adjust the airflow rate provided by the air supply module; The gas supply module and the airflow adjustment module together form the adjustment module.

14. The method for controlling wafer surface flatness according to claim 9, characterized in that, Also includes: A movable support column is provided, the support column being located within the first through hole, and the support column supporting the pillar. A drive unit is provided, which is connected to the support column, and the support column is pushed or pulled back by the drive unit; The supporting column and the driving part together form the adjustment module.

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