Semiconductor device and method of processing the same, temperature measurement method

Abstract

Embodiments of the present application disclose a semiconductor device and a processing method and a temperature measuring method thereof. The semiconductor device comprises a chamber, a heat providing device, an adjusting plate and a temperature measuring device. The chamber comprises a supporting part for placing a wafer to be processed. The heat providing device is located above the chamber and is used for providing a heat source into the chamber. The adjusting plate is located in the chamber and below the supporting part. The temperature measuring device is located below the adjusting plate and is used for receiving heat radiation and outputting a measured temperature according to the received heat radiation. When the wafer to be processed is placed on the supporting part, the adjusting plate is in a first light transmittance, and the temperature measuring device can receive heat radiation emitted by the wafer to be processed through the adjusting plate. When the wafer to be processed is not placed on the supporting part, the adjusting plate is in a second light transmittance, and the temperature measuring device can receive heat radiation emitted by the adjusting plate. The first light transmittance is not equal to the second light transmittance.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a semiconductor device and its processing method, and a temperature measurement method. Background Technology

[0002] Rapid Thermal Processing (RTP) is a widely used process in the semiconductor manufacturing industry. RTP equipment typically uses thermometers with fast response times and long service life for temperature measurement. In practical applications, the thermometers read the temperature by detecting the thermal radiation from the silicon wafer.

[0003] However, when the RTP (Reverse Thermal Processing) chamber is empty of wafers, the temperature readings from the thermometers in related technologies cannot accurately reflect the true temperature of the RTP chamber. Since the intensity of the RTP machine's light source is adjusted based on the thermometer readings, inaccurate readings can cause significant wafer bending during subsequent heat treatment, affecting product quality and potentially leading to product scrap. Summary of the Invention

[0004] To address the related technical problems, embodiments of this application propose a semiconductor device and its processing method, as well as a temperature measurement method.

[0005] This application provides a semiconductor device, including:

[0006] A chamber, including a support structure for placing the wafer to be processed;

[0007] A heat supply device, located above the chamber, is used to provide a heat source to the chamber;

[0008] An adjustment plate, located within the chamber and below the supporting component; and

[0009] A temperature measuring device, located below the adjustment plate, is used to receive thermal radiation and output the measured temperature based on the received thermal radiation; wherein,

[0010] When the wafer to be processed is placed on the support component, the adjustment plate is at a first transmittance, and the temperature measuring device can receive the thermal radiation emitted by the wafer to be processed through the adjustment plate; when the wafer to be processed is not placed on the support component, the adjustment plate is at a second transmittance, and the temperature measuring device can receive the thermal radiation emitted by the adjustment plate; the first transmittance is not equal to the second transmittance.

[0011] In the above scheme, the first transmittance is greater than the second transmittance.

[0012] In the above scheme, when the adjustment plate is at the second transmittance, the emissivity of the adjustment plate is the same as the emissivity of the wafer to be processed.

[0013] In the above scheme, the material of the adjustment plate includes ceramic material and photochromic material; wherein, when light of different wavelengths acts on the adjustment plate, the light transmittance of the adjustment plate changes.

[0014] In the above scheme, the ceramic material includes at least one of quartz, alumina, silicon carbide or sapphire; the photochromic material includes at least one of alkyne compounds, spiropyran, spiroxazine, triarylmethane compounds, hexaphenyl diimidazole, salicylaldehyde acetal aniline compounds, perinaphthalene indigo dyes, azo compounds, polycyclic aromatic compounds, thiazides, fumonisins or diarylethylene.

[0015] In the above scheme, the photochromic material is located on the surface of the ceramic material, or the photochromic material is doped into the ceramic material.

[0016] In the above scheme, the heat supply device includes at least one of halogen lamp, ultraviolet lamp, laser diode, resistive heater, microwave power heater, light-emitting diode, quartz lamp, arc lamp, resistance wire or heating wire.

[0017] In the above scheme, the temperature measuring device includes at least one of an optical thermometer, a radiation thermometer, and a colorimetric thermometer.

[0018] In the above scheme, the semiconductor equipment includes a rapid thermal processing machine.

[0019] This application also proposes a temperature measurement method, applied to the semiconductor device provided in this application embodiment; the temperature measurement method includes:

[0020] When the wafer to be processed is not placed on the support component, the output temperature of the temperature measuring device is obtained; the output temperature can characterize the temperature at which the wafer to be processed is heated when the wafer to be processed is placed on the support component.

[0021] This application embodiment further proposes a processing method for a semiconductor device, wherein the semiconductor device includes the semiconductor device described in the embodiments of this application; the processing method includes:

[0022] Receive a first instruction, the first instruction instructing the semiconductor device to be used to perform a semiconductor processing process;

[0023] Set the heat supply device to the first power;

[0024] The first output temperature of the temperature measuring device is obtained when the wafer to be processed is not placed on the carrier component;

[0025] Based on the state of the first output temperature, determine whether the semiconductor device can be directly used to perform semiconductor processing.

[0026] In the above scheme, the first power is 4%-14% of the maximum power of the heat supply device.

[0027] In the above scheme, determining whether the semiconductor device can be directly used to perform semiconductor processing based on the state of the first output temperature includes:

[0028] If the first output temperature is within the first preset temperature range, it is determined that the status of the first output temperature is normal, and it is determined that the semiconductor device can be directly used to perform semiconductor processing.

[0029] If the first output temperature is not within the first preset temperature range, it is determined that the status of the first output temperature is abnormal, and the semiconductor device cannot be directly used to perform semiconductor processing.

[0030] The method in the above scheme further includes:

[0031] When it is determined that the semiconductor device cannot be directly used to perform semiconductor processing, the temperature measuring device in the semiconductor device is calibrated.

[0032] In the above scheme, after calibrating the temperature measuring device in the semiconductor equipment, the method further includes:

[0033] The heat supply device is set to a second power;

[0034] When the wafer to be processed is not placed on the support component, the second output temperature of the temperature measuring device is obtained;

[0035] Based on the state of the second output temperature, it is determined whether the semiconductor device is currently capable of performing semiconductor processing.

[0036] In the above scheme, the second power is greater than or equal to the first power.

[0037] In the above scheme, the range of the second power is 15%-25% of the maximum power of the heat supply device.

[0038] In the above scheme, determining whether the semiconductor device is currently capable of performing semiconductor processing based on the state of the second output temperature includes:

[0039] If the second output temperature is within the second preset temperature range, it is determined that the status of the second output temperature is normal, and it is determined that the semiconductor device is currently capable of performing semiconductor processing.

[0040] If the second output temperature is not within the second preset temperature range, it is determined that the status of the second output temperature is abnormal, and the semiconductor device cannot be used to perform semiconductor processing.

[0041] The method in the above scheme further includes:

[0042] When it is determined that the semiconductor device is currently unusable for performing semiconductor processing, an alarm message is issued.

[0043] This application provides a semiconductor device and its processing method, as well as a temperature measurement method. The semiconductor device includes: a chamber with a support component for placing a wafer to be processed; a heat supply device located above the chamber for providing a heat source to the chamber; an adjustment plate located in the chamber and below the support component; and a temperature measuring device located below the adjustment plate for receiving thermal radiation and outputting a measured temperature based on the received thermal radiation. When the wafer to be processed is placed on the support component, the adjustment plate is at a first transmittance, and the temperature measuring device can receive thermal radiation emitted by the wafer through the adjustment plate. When the wafer to be processed is not placed on the support component, the adjustment plate is at a second transmittance, and the temperature measuring device can receive thermal radiation emitted by the adjustment plate. The first transmittance is not equal to the second transmittance. This application introduces a color-changing adjustment plate into the semiconductor device. Because the color-changing adjustment plate can change from one structure to another under the influence of different wavelengths of light, i.e., its color changes. By utilizing this change, when there is no wafer in the cavity, the actual temperature within the cavity can be detected using a temperature measuring device, thereby enabling the calibration of the temperature measuring device before the process. When a wafer is present in the cavity, the temperature of the wafer within the cavity can be detected using a temperature measuring device, thus not affecting the temperature measurement during the process. Therefore, the semiconductor device provided in this application embodiment can better meet the needs of practical applications. Attached Figure Description

[0044] Figure 1a A partial perspective view of an RTP machine provided in an embodiment of this application;

[0045] Figure 1b A partial exploded view of an RTP machine provided in an embodiment of this application;

[0046] Figure 2A schematic diagram showing the functional relationship between the radiation energy density of a Planck blackbody and wavelength at different temperatures, provided for embodiments of this application;

[0047] Figure 3 A schematic flowchart illustrating the temperature regulation of an RTP machine is provided in an embodiment of this application.

[0048] Figure 4a A schematic diagram illustrating the effect of the lifting pin of an RTP machine on the temperature measurement of an optical thermometer, provided as an embodiment of this application.

[0049] Figure 4b A schematic diagram illustrating the effect of the retraction process of the lifting pin of an RTP machine on the temperature measurement of an optical thermometer, provided for an embodiment of this application.

[0050] Figure 5a A cross-sectional schematic diagram of another RTP machine provided in this application embodiment when a wafer is present in the internal cavity;

[0051] Figure 5b A cross-sectional schematic diagram of another RTP machine provided in this application embodiment when there is no wafer in the internal cavity;

[0052] Figure 5c A cross-sectional schematic diagram of an RTP machine provided in this application when there is no wafer inside the machine cavity;

[0053] Figure 6 This application provides a schematic diagram of the implementation process of a semiconductor device processing method. Detailed Implementation

[0054] Exemplary embodiments of the present application will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be implemented in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the present application and to fully convey the scope of the disclosure of the present application to those skilled in the art.

[0055] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be practiced without one or more of these details. In other instances, to avoid confusion with this application, some technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0056] In the accompanying drawings, for clarity, the dimensions of layers, areas, and elements, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0057] It should be understood that spatial relation terms such as “below,” “under,” “below,” “below,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “below” can include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0058] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0059] It should be noted that terms such as "first" and "second" are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence.

[0060] In order to gain a more detailed understanding of the features and technical content of the embodiments of this application, the implementation of the embodiments of this application will be described in detail below with reference to the accompanying drawings. The accompanying drawings are for reference and illustration only and are not intended to limit the embodiments of this application.

[0061] It should be noted that the semiconductor equipment involved in the embodiments of this application includes, but is not limited to, RTP (Regenerative Thermal Phosphating) equipment. It is understood that the semiconductor equipment involved in the embodiments of this application can be applied to other semiconductor equipment that have heating functions and measure temperature using the principle of thermal radiation, but where the temperature reading of the temperature measuring device cannot reflect the true temperature of the chamber when there is no wafer in the equipment cavity. For the sake of brevity and clarity, the following description uses only an RTP equipment as an example.

[0062] The following is a brief introduction to the RTP machine.

[0063] Figure 1a A partial perspective view of an RTP machine provided in an embodiment of this application; Figure 1bThis is a partial exploded view of an RTP machine provided as an embodiment of this application. Figure 1a and Figure 1b As shown, the RTP machine 10 includes: multiple halogen lamps 101, a chamber 102, a quartz cover plate 103, a reflector plate 104, and an optical thermometer 105; wherein, the multiple halogen lamps 101 are located above the chamber and are used to provide a heat source, i.e., short-wavelength radiation, into the chamber 102; the chamber 102 includes a support component for placing a wafer W to be processed, and the wafer W to be processed undergoes heat treatment operations in the chamber; the reflector plate 104 is located below the wafer to be processed and is used to reflect the heat radiation emitted by the wafer back towards the wafer to help maintain temperature uniformity; the quartz cover plate 103 is located below the support component and is used to prevent wafer reaction products from covering the surfaces of the reflector plate 104 and the optical thermometer 105, which would shorten the chamber maintenance cycle and cause inaccurate detection of the wafer surface temperature; the optical thermometer 105 is located below the reflector plate 104 and is used to receive heat radiation and output the measured temperature based on the received heat radiation.

[0064] In practical applications, the optical thermometer 105 calculates the actual temperature of the chamber by detecting the amount of radiation energy at short wavelengths. Figure 2 This is a schematic diagram showing the functional relationship between the radiation energy density of a Planck blackbody and wavelength at different temperatures, provided in an embodiment of this application. Figure 2 The temperatures represented by the curves from bottom to top are T1, T2, T3, T4, T5, T6, T7, T8, and T9. For example, T1 can be 400℃, T2 can be 500℃, T3 can be 600℃, T4 can be 700℃, T5 can be 800℃, T6 can be 900℃, T7 can be 1000℃, T8 can be 1100℃, and T9 can be 1200℃. Figure 2 The values ​​of λ in the horizontal axis and t in the vertical axis can be adjusted according to the actual situation.

[0065] In practical applications, Figure 3 This is a schematic flowchart illustrating the temperature regulation of an RTP machine according to an embodiment of this application. Figure 3As shown, the AI / O (Analog Input / Output) interface receives signals from the RTC (Real-Time Controller) and sends control commands to the SCR (Silicon Controlled Rectifier); the SCR provides and controls the halogen lamp power supply; the halogen lamp emits light onto the wafer; an optical thermometer detects the light source; a Pyro hub integrates the detected signals; a Pyro card performs temperature conversion on the detected signals and sends them to the RTC; the RTC compares the target temperature value in the process with the actual temperature measured by the Pyro card and sends control commands to the AI / O based on the comparison result.

[0066] As can be seen from the temperature regulation process described above, the intensity of the light source provided by the halogen lamp is adjusted based on the feedback from the optical thermometer. When the optical thermometer reading is inaccurate, the temperature applied to the wafer during heat treatment will not match the actual required temperature. This will cause the wafer to bend beyond expectations, affecting product quality and potentially even leading to product scrap. Therefore, calibrating the optical thermometer is particularly important.

[0067] In practical applications, on the one hand, the optical thermometer 105 is typically calibrated before the wafer W to be processed is placed into the cavity of the RTP machine. That is, there is no wafer in the cavity when the optical thermometer 105 is calibrated. Since the quartz cover plate 103 is generally transparent, when there is no wafer in the cavity, the light from the halogen lamp will pass directly through the quartz cover plate 103, resulting in inaccurate temperature measurement by the optical thermometer, leading to a higher measured temperature and an incorrect temperature reading.

[0068] On the other hand, even if a wafer is present in the cavity, light leakage will occur when the lifting pin used to place the wafer W to be processed is raised, resulting in inaccurate temperature measurement by the optical thermometer 105 and obtaining an incorrect temperature reading. When a wafer is present in the cavity and the lifting pin used to place the wafer W to be processed is not raised and remains retracted, the wafer covers the quartz cover plate 103, and there is no light leakage. In this case, the optical thermometer 105 measures the temperature accurately. The process of the lifting pin raising and retracting is as follows: Figure 4a and 4b As shown.

[0069] In practical applications, when the halogen lamp's maximum power is 9%, and a wafer is present in the cavity, the temperature value measured by the optical thermometer is relatively accurate, approximately t1 degrees Celsius; when no wafer is present in the cavity, the temperature value measured by the optical thermometer deviates significantly from the accurate value, approximately 2t1-6t1 degrees Celsius.

[0070] In summary, when there is no wafer in the cavity during the use of the RTP machine, there is a problem that the actual temperature reading of the cavity cannot be monitored, and the temperature reading of the optical thermometer cannot be calibrated without maintenance.

[0071] To address at least one of the aforementioned problems, embodiments of this application provide another semiconductor device, the semiconductor device comprising:

[0072] A chamber, including a support structure for placing the wafer to be processed;

[0073] A heat supply device, located above the chamber, is used to provide a heat source to the chamber;

[0074] An adjustment plate, located within the chamber and below the supporting component; and

[0075] A temperature measuring device, located below the adjustment plate, is used to receive thermal radiation and output the measured temperature based on the received thermal radiation; wherein,

[0076] When the wafer to be processed is placed on the support component, the adjustment plate is at a first transmittance, and the temperature measuring device can receive the thermal radiation emitted by the wafer to be processed through the adjustment plate; when the wafer to be processed is not placed on the support component, the adjustment plate is at a second transmittance, and the temperature measuring device can receive the thermal radiation emitted by the adjustment plate; the first transmittance is not equal to the second transmittance.

[0077] In some embodiments, the semiconductor device may include an RTP (Remote Timing Processing) unit. Figure 5a , Figure 5b This is a cross-sectional schematic diagram of another RTP machine provided in an embodiment of this application. The following will use... Figure 5a , Figure 5b Another semiconductor device provided in this application embodiment will be described in detail as an example.

[0078] Here, the chamber 202 is the location where the semiconductor device 20 performs heat treatment. The chamber includes a support component for placing the wafer W to be processed. Figure 5a , Figure 5b (Not shown in the image).

[0079] For example, the wafer to be processed W (e.g., a silicon wafer) enters the annular support member in the chamber 202 through a valve or access port.

[0080] Here, the heat supply device 201 is placed on the chamber 202 to direct radiant energy toward the wafer W to be processed and thus heat the wafer W. In other words, the heat supply device 201 can be used to provide a light source. In the chamber 202, the heat supply device 201 may include a plurality of high-intensity halogen lamps arranged in a hexagonal close-packed manner.

[0081] In some embodiments, the heat providing device 201 may include at least one of a halogen lamp, an ultraviolet lamp, a laser diode, a resistive heater, a microwave power heater, a light-emitting diode, a quartz lamp, an arc lamp, a resistance wire, or a heating wire.

[0082] The heat supply device 201 can be divided into multiple regions, each of which can be arranged in a ring-like shape around the central axis of the chamber 202. The control circuitry changes the voltage delivered to the heat supply device 201 in different regions to adjust the radiant energy distribution.

[0083] It should be noted that the temperature provided by the heat supply device 201 is different from the temperature at which the wafer W is heated. Typically, the temperature provided by the heat supply device 201 is higher than the temperature at which the wafer W is heated. In practical applications, when the wafer W is placed on the support component in the chamber, the adjustment plate 203 needs to have good light transmittance to measure its temperature. This allows the light emitted by the wafer W to pass through the adjustment plate 203 and be detected by the temperature measuring device 205, thus reflecting the temperature of the wafer W. However, if the light transmittance of the adjustment plate 203 remains consistently good, when the wafer W is not placed on the support component, the light emitted by the heat supply device 201 passes through the adjustment plate 203 and is detected by the temperature measuring device 205. In this case, the temperature measuring device 205 cannot reflect the chamber temperature or the temperature at which the wafer W is heated during subsequent annealing; instead, it reflects the temperature of the heat supply device 201, which will be significantly higher than the actual temperature.

[0084] Therefore, in this embodiment, the light transmittance of the adjustment plate 203 located in the chamber 202 and below the supporting component can be varied according to actual needs. In some embodiments, the material of the adjustment plate 203 includes ceramic materials and photochromic materials; wherein, when light of different wavelengths acts on the adjustment plate 203, the light transmittance of the adjustment plate 203 changes.

[0085] In practical applications, the ceramic material includes optically transparent ceramics. The adjustment plate 203 is made by adding a photochromic material, also known as a photochromic material, to the ceramic material. This photochromic material has different absorption coefficients and can transform from one structure to another under different wavelengths of light, causing a color change in the ceramic material. This change is reversible, and this change allows the temperature measurement device to detect the true temperature within the cavity when there is no wafer present.

[0086] In some embodiments, the ceramic material includes at least one of quartz, alumina, silicon carbide, or sapphire; the photochromic material includes at least one of alkyne compounds, spiropyran, spiroxazine, triarylmethane compounds, hexaphenylbisimidazole, salicylaldehyde acetal aniline compounds, perinaphthalene indigo dyes, azo compounds, polycyclic aromatic compounds, thiazides, fumonisins, or diarylethylene.

[0087] In some embodiments, the photochromic material is located on the surface of the ceramic material, or the photochromic material is doped into the ceramic material.

[0088] In practical applications, a photochromic material coating can be deposited on the surface of ceramic materials, or the photochromic material can be doped into the ceramic materials in a doping manner.

[0089] The following explanation further illustrates how the transmittance of the adjustment plate 203 changes when light of different wavelengths acts on it.

[0090] like Figure 5a As shown, when a wafer is present in cavity 202 covering adjustment plate 203, the end of adjustment plate 203 near heat supply device 201 is blocked, and adjustment plate 203 cannot directly receive the light source from heat supply device 201. At this time, adjustment plate 203 is at the first transmittance, for example, adjustment plate 203 with normal transmittance, thus not affecting temperature measurement by temperature measuring device 205 during the process. Figure 5b As shown, when there is no wafer in the cavity 202, the end of the adjustment plate 203 closest to the heat supply device 201 is unobstructed, and the adjustment plate 203 can directly receive the light source provided by the heat supply device 201. At this time, the adjustment plate 203 is at the second transmittance. In some embodiments, the first transmittance is greater than the second transmittance. For example, the adjustment plate 203 with the second transmittance is an adjustment plate 203 with lower transmittance. The adjustment plate 203 with lower transmittance ensures that the light source generated by the heat supply device 201 cannot leak directly into the temperature measuring device 205 through the adjustment plate 203, and the temperature measurement by the temperature measuring device 205 will not be too high, tending to be accurate.

[0091] In some embodiments, when the adjustment plate 203 is at the second transmittance, the emissivity of the adjustment plate 203 is the same as the emissivity of the wafer W to be processed.

[0092] It is understandable that when the adjustment plate 203 is at the second transmittance, if the adjustment plate 203 and the wafer W to be processed have the same emissivity, the adjustment plate 203 can simulate the blackbody radiation of the wafer. In this case, the temperature measured by the temperature measuring device 205 can characterize the temperature at which the wafer W is heated during subsequent annealing. This temperature is instructive for the calibration of the temperature measuring device 205. Of course, even if the adjustment plate 203 and the wafer W to be processed do not have the same emissivity, the temperature at which the wafer W is heated during subsequent annealing can be calculated by converting the emissivity relationship.

[0093] It should be noted that, for ease of comparison with the aforementioned embodiments, Figure 5c A cross-sectional schematic diagram is shown when there is no wafer inside the cavity of the RTP machine 10 in the aforementioned embodiment. Figure 5c As shown, when there is no wafer in the cavity 102, the end of the quartz cover plate 103 near the multiple halogen lamps 101 is unobstructed, and the quartz cover plate 103 can directly receive the light source provided by the multiple halogen lamps 101. At this time, the quartz cover plate 103 has normal light transmittance, and the light source generated by the multiple halogen lamps 101 leaks directly into the optical thermometer 105 through the quartz cover plate 103, causing the optical thermometer to overestimate the temperature.

[0094] Here, the temperature measuring device 205 is located below the adjustment plate 203. It is a non-contact temperature measuring device used to receive thermal radiation and output the measured temperature based on the received thermal radiation.

[0095] In some embodiments, the temperature measuring device includes at least one of an optical thermometer, a radiation thermometer, and a colorimetric thermometer.

[0096] It should be noted that, in this embodiment, the RTP machine may also include components such as a reflector.

[0097] In this embodiment, a color-changing adjustment plate is used, such as one made by adding a photochromic material to the ceramic material. The photochromic material has different absorption coefficients and can transform from one structure to another under different wavelengths of light, resulting in a reversible change in the color of the ceramic material. Utilizing this reversible change, when there is no wafer in the cavity, a temperature measuring device can detect the actual temperature within the cavity, thus enabling calibration of the temperature measuring device before the process. When a wafer is present in the cavity, the temperature of the wafer within the cavity can be detected using the temperature measuring device, without affecting the temperature measurement during the process. Therefore, the RTP machine provided in this embodiment better meets the needs of practical applications.

[0098] This application also proposes a temperature measurement method, applied to the semiconductor device provided in this application embodiment; the temperature measurement method includes:

[0099] When the wafer to be processed is not placed on the support component, the output temperature of the temperature measuring device is obtained; the output temperature can characterize the temperature at which the wafer to be processed is heated when the wafer to be processed is placed on the support component.

[0100] Here, the principle that the semiconductor device can obtain the temperature at which the wafer to be processed is heated when the wafer to be processed is placed on the carrier component, which can characterize the temperature of the wafer to be processed when the wafer to be processed is placed on the carrier component, has already been described in the previous embodiments, and will not be repeated here.

[0101] This application embodiment further proposes a processing method for a semiconductor device, wherein the semiconductor device includes the semiconductor device described in the embodiments of this application; the processing method includes:

[0102] Receive a first instruction, the first instruction instructing the semiconductor device to be used to perform a semiconductor processing process;

[0103] Set the heat supply device to the first power;

[0104] The first output temperature of the temperature measuring device is obtained when the wafer to be processed is not placed on the carrier component;

[0105] Based on the state of the first output temperature, determine whether the semiconductor device can be directly used to perform semiconductor processing.

[0106] Figure 6 This application provides a schematic diagram of the implementation flow of a semiconductor device processing method according to an embodiment. The following will be combined with... Figure 6 The processing method performed by the semiconductor device provided in the embodiments of this application will be described in detail.

[0107] It should be noted that the processing method described in this embodiment is executed by another semiconductor device mentioned above.

[0108] The following explanation will continue to use an RTP machine as an example of a semiconductor device.

[0109] like Figure 6 As shown in step 601, the RTP machine receives a first instruction from the host computer to perform semiconductor processing on a batch of wafers to be processed. Here, the semiconductor processing may include, but is not limited to, thermal oxidation, high-temperature immersion annealing, low-temperature immersion annealing, or peak annealing.

[0110] Before using the RTP machine to perform semiconductor processing on the batch of wafers, it is necessary to determine whether the RTP machine can be directly used to perform semiconductor processing, i.e., whether it is necessary to perform a calibration operation on the temperature measurement device first.

[0111] In response to the first instruction, the heat supply device is set to the first power.

[0112] In some embodiments, the first power is 4%-14% of the maximum power of the heat supply device. A typical value for the first power can be 9% of the maximum power of the heat supply device.

[0113] Next, continue to refer to Figure 6 Step 602 is executed to perform the first temperature reading check on the temperature measuring device. During the first temperature reading check, no wafer to be processed is placed on the carrier component.

[0114] The first output temperature of the temperature measuring device is acquired under the condition that the heat supply device is set to the first power and the supporting component is not holding the wafer to be processed. Then, step 603 is executed to determine the first temperature reading status.

[0115] In some embodiments, determining whether the semiconductor device can be directly used to perform a semiconductor processing process based on the state of the first output temperature includes:

[0116] If the first output temperature is within the first preset temperature range, it is determined that the status of the first output temperature is normal, and it is determined that the semiconductor device can be directly used to perform semiconductor processing.

[0117] If the first output temperature is not within the first preset temperature range, it is determined that the status of the first output temperature is abnormal, and the semiconductor device cannot be directly used to perform semiconductor processing.

[0118] Here, the first preset temperature can be a certain range of temperatures surrounding the temperature at which the wafer to be processed is heated when the heat supply device is set to the first power and the wafer to be processed is placed on the support component. This certain range can be adjusted according to the accuracy of the RTP machine, such as ±2 degrees Celsius.

[0119] If the first output temperature is within the first preset temperature range, the status of the first output temperature is determined to be normal, and the semiconductor device is determined to be directly usable for performing semiconductor processing. Step 607 can be executed. If the first output temperature is not within the first preset temperature range, the status of the first output temperature is determined to be abnormal, and the semiconductor device is determined to be not directly usable for performing semiconductor processing. The temperature measuring device in the semiconductor device is calibrated, i.e., step 604 is executed.

[0120] In practical applications, the temperature measuring device can be calibrated based on the deviation of the first output temperature from the first preset temperature range. After calibration, a second temperature reading check is required. Specifically:

[0121] In some embodiments, after calibrating the temperature measuring device in the semiconductor device, the method further includes:

[0122] The heat supply device is set to a second power;

[0123] When the wafer to be processed is not placed on the support component, the second output temperature of the temperature measuring device is obtained;

[0124] Based on the state of the second output temperature, it is determined whether the semiconductor device is currently capable of performing semiconductor processing.

[0125] Here, after calibrating the temperature measuring device, the heat supply device is set to the second power.

[0126] In some embodiments, the second power is greater than or equal to the first power.

[0127] In some embodiments, the second power ranges from 15% to 25% of the maximum power of the heat supply device. A typical value for the second power can be 20% of the maximum power of the heat supply device.

[0128] Next, continue to refer to Figure 6 Step 605 is executed, performing a second temperature reading check on the temperature measuring device. During this second temperature reading check, no wafer to be processed is placed on the support component.

[0129] The second output temperature of the temperature measuring device is acquired under the condition that the heat supply device is set to the second power and the support component is not holding the wafer to be processed. Then, step 606 is executed to determine the second temperature reading status.

[0130] In some embodiments, determining whether the semiconductor device is currently capable of performing a semiconductor processing process based on the state of the second output temperature includes:

[0131] If the second output temperature is within the second preset temperature range, it is determined that the status of the second output temperature is normal, and it is determined that the semiconductor device is currently capable of performing semiconductor processing.

[0132] If the second output temperature is not within the second preset temperature range, it is determined that the status of the second output temperature is abnormal, and the semiconductor device cannot be used to perform semiconductor processing.

[0133] Here, the second preset temperature can be a certain range of temperatures surrounding the temperature at which the wafer to be processed is heated when the heat supply device is set to the second power and the wafer to be processed is placed on the support component. This certain range can be adjusted according to the accuracy of the RTP machine, such as ±2 degrees Celsius.

[0134] If the second output temperature is within the second preset temperature range, the status of the second output temperature is determined to be normal, and the semiconductor device is determined to be directly usable for performing semiconductor processing. Step 607 can be executed. If the second output temperature is not within the second preset temperature range, the status of the second output temperature is determined to be abnormal, and the semiconductor device is determined to be unusable for performing semiconductor processing. When the semiconductor device is determined to be unusable for performing semiconductor processing, an alarm message is issued, i.e., step 608 is executed.

[0135] In practical applications, the alarm information here can indicate that the temperature measuring device is inaccurate and calibration has failed, requiring further processing measures, such as recalibration or return to the factory for repair.

[0136] In practical applications, when no wafer is placed in the RTP machine, the heat supply device is generally set to 9% of the maximum power. At this power, if there is no wafer in the chamber, the temperature measurement device cannot detect and calibrate the true temperature of the chamber in real time. Therefore, a calibration and temperature check at a specific power (15% to 25%) is required before the semiconductor processing is performed in the chamber. At this time, the temperature measurement device is detected according to the inherent emissivity of the adjustment board. If there is a temperature deviation, calibration is performed so as not to affect the semiconductor processing of the product.

[0137] In practical applications, the wafers to be processed involved in the embodiments of this application can be used to generate various semiconductor devices, such as dynamic random access devices.

[0138] It should be understood that the phrase "one embodiment" or "an embodiment" throughout the specification means that a specific feature, structure, or characteristic related to the embodiment is included in at least one embodiment of this application. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. It should be understood that in the various embodiments of this application, the sequence numbers of the above-described processes do not imply a sequential order of execution; the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application. The sequence numbers of the above-described embodiments are merely descriptive and do not represent the superiority or inferiority of the embodiments.

[0139] The methods disclosed in the several method embodiments provided in this application can be arbitrarily combined without conflict to obtain new method embodiments.

[0140] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A semiconductor device, characterized in that, include: A chamber, including a support structure for placing the wafer to be processed; A heat supply device, located above the chamber, is used to provide a heat source to the chamber; An adjustment plate, located within the chamber and below the supporting component; and A temperature measuring device, located below the adjustment plate, is used to receive thermal radiation and output the measured temperature based on the received thermal radiation; wherein, When the wafer to be processed is placed on the support component, the adjustment plate is at a first transmittance, and the temperature measuring device can receive the thermal radiation emitted by the wafer to be processed through the adjustment plate; when the wafer to be processed is not placed on the support component, the adjustment plate is at a second transmittance, and the temperature measuring device can receive the thermal radiation emitted by the adjustment plate; the first transmittance is not equal to the second transmittance.

2. The semiconductor device according to claim 1, characterized in that, The first transmittance is greater than the second transmittance.

3. The semiconductor device according to claim 1, characterized in that, When the adjustment plate is at the second transmittance, the emissivity of the adjustment plate is the same as the emissivity of the wafer to be processed.

4. The semiconductor device according to claim 1, characterized in that, The adjustment plate is made of ceramic materials and photochromic materials; wherein, when light of different wavelengths acts on the adjustment plate, the light transmittance of the adjustment plate changes.

5. The semiconductor device according to claim 4, characterized in that, The ceramic material includes at least one of quartz, alumina, silicon carbide, or sapphire; the photochromic material includes at least one of alkyne compounds, spiropyran, spiroxazine, triarylmethane compounds, hexaphenylbisimidazole, salicylaldehyde acetal aniline compounds, perinaphthalene indigo dyes, azo compounds, polycyclic aromatic compounds, thiazides, fumonisin anhydrides, or diarylethylene.

6. The semiconductor device according to claim 4, characterized in that, The photochromic material is located on the surface of the ceramic material, or the photochromic material is doped into the ceramic material.

7. The semiconductor device according to claim 1, characterized in that, The heat supply device includes at least one of halogen lamp, ultraviolet lamp, laser diode, resistive heater, microwave power heater, light-emitting diode, quartz lamp, arc lamp, resistance wire or heating wire.

8. The semiconductor device according to claim 1, characterized in that, The temperature measuring device includes at least one of an optical thermometer, a radiation thermometer, and a colorimetric thermometer.

9. The semiconductor device according to claim 1, characterized in that, The semiconductor equipment includes a rapid thermal processing machine.

10. A temperature measurement method, characterized in that, Applied to the semiconductor device as described in any one of claims 1-9; The temperature measurement method includes: The output temperature of the temperature measuring device is obtained when the wafer to be processed is not placed on the support component; The output temperature can characterize the temperature at which the wafer to be processed is heated when it is placed on the support component.

11. A method for processing a semiconductor device, characterized in that, The semiconductor device includes the semiconductor device as described in any one of claims 1-9; the processing method includes: Receive a first instruction, the first instruction instructing the semiconductor device to be used to perform a semiconductor processing process; Set the heat supply device to the first power; The first output temperature of the temperature measuring device is obtained when the wafer to be processed is not placed on the carrier component; Based on the state of the first output temperature, determine whether the semiconductor device can be directly used to perform semiconductor processing.

12. The processing method according to claim 11, characterized in that, The first power is 4%-14% of the maximum power of the heat supply device.

13. The processing method according to claim 11, characterized in that, The step of determining whether the semiconductor device can be directly used to perform semiconductor processing based on the state of the first output temperature includes: If the first output temperature is within the first preset temperature range, it is determined that the status of the first output temperature is normal, and it is determined that the semiconductor device can be directly used to perform semiconductor processing. If the first output temperature is not within the first preset temperature range, it is determined that the status of the first output temperature is abnormal, and the semiconductor device cannot be directly used to perform semiconductor processing.

14. The processing method according to claim 13, characterized in that, The method further includes: When it is determined that the semiconductor device cannot be directly used to perform semiconductor processing, the temperature measuring device in the semiconductor device is calibrated.

15. The processing method according to claim 14, characterized in that, After calibrating the temperature measuring device in the semiconductor device, the method further includes: The heat supply device is set to a second power; When the wafer to be processed is not placed on the support component, the second output temperature of the temperature measuring device is obtained; Based on the state of the second output temperature, it is determined whether the semiconductor device is currently capable of performing semiconductor processing.

16. The processing method according to claim 15, characterized in that, The second power is greater than or equal to the first power.

17. The processing method according to claim 16, characterized in that, The second power ranges from 15% to 25% of the maximum power of the heat supply device.

18. The processing method according to claim 15, characterized in that, Determining whether the semiconductor device is currently capable of performing a semiconductor processing process based on the state of the second output temperature includes: If the second output temperature is within the second preset temperature range, it is determined that the status of the second output temperature is normal, and it is determined that the semiconductor device is currently capable of performing semiconductor processing. If the second output temperature is not within the second preset temperature range, it is determined that the status of the second output temperature is abnormal, and the semiconductor device cannot be used to perform semiconductor processing.

19. The processing method according to claim 18, characterized in that, The method further includes: When it is determined that the semiconductor device is currently unusable for performing semiconductor processing, an alarm message is issued.

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