Semiconductor substrate cleaning method, method for producing processed semiconductor substrate, and stripping and dissolving composition

By using a composition of a quaternary ammonium salt, an amide-based solvent and a specific solvent, the problem of low efficiency in removing adhesive residues on the surface of the semiconductor substrate in the prior art is solved, and a fast and clean cleaning effect is achieved, and the cutting tape is damaged is prevented.

CN116507683BActive Publication Date: 2025-03-28NISSAN CHEM CORP
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Patent Information

Application Number
CN202280007459.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2021-09-16
Filing Date
2022-09-13
Publication Date
2025-03-28
Estimated Expiration
2042-09-13

AI Technical Summary

Technical Problem

The prior art is inefficient in removing adhesive residues on the surface of semiconductor substrates, takes a long time, and there is a need for more efficient cleaning methods and compositions.

Method used

Using a composition containing a quaternary ammonium salt, an amide-based solvent and a specific solvent, the adhesive layer on the semiconductor substrate is swelled, peeled off and dissolved by a cleaning operation, thereby quickly removing the adhesive layer.

Benefits of technology

The adhesive layer on the semiconductor substrate is removed in a shorter time and cleaner manner, which improves the cleaning efficiency and effectively prevents damage to the cutting tape in the cleaning process.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

The present invention provides a method for cleaning a semiconductor substrate, a method for manufacturing a processed semiconductor substrate including such a cleaning method, and a composition for such a cleaning method, wherein the method for cleaning a semiconductor substrate can remove (clean) the adhesive layer from a semiconductor substrate having an adhesive layer obtained using, for example, a silicone adhesive on its surface in a shorter time and more cleanly through a simple operation. A method for cleaning a semiconductor substrate, characterized in that it includes a step of using a stripping and dissolving composition to strip and dissolve the adhesive layer on the semiconductor substrate, wherein the stripping and dissolving composition comprises: [I] component: a quaternary ammonium salt, [II] component: an amide solvent, and [III] component: a solvent represented by the following formula (L). (Wherein, L 1 and L 2 Each independently represents an alkyl group having 2 to 5 carbon atoms, L 3 Indicates O or S. )L 1 ‑L 3 ‑L 2 (L)
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Citation Information

Patent Citations

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    US6818608B2

  • Siloxane resin remover, siloxane resin removal method using siloxane resin remover, semiconductor substrate product and semiconductor element manufacturing method

    WO2014092022A1

  • Decomposing / cleaning composition, method for cleaning adhesive polymer, and method for producing device wafer

    CN113302269A

  • Cleaning agent composition and cleaning method

    WO2020166702A1