Low-e coated glass with middle-low transmittance
By optimizing the multi-layer coating structure of Low-E glass, the shortcomings of existing Low-E glass in terms of high emissivity, visibility, and hardness have been overcome. This has resulted in a medium-low transmittance temperable low-emissivity coated glass that is easy to process and store, and has improved the performance and heat insulation effect after tempering.
Patent Information
- Application Number
- CN202211620726.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-12-15
- Publication Date
- 2026-02-03
- Estimated Expiration
- 2042-12-15
AI Technical Summary
Existing Low-E glass is insufficient to meet the demands of modern architecture for high emissivity, visibility, and hardness, especially after tempering. There is a lack of medium-low transparency temperable low-emissivity coated glass on the market that meets these requirements.
A dielectric layer with a SiZrNx+SiNx+ZnAlOx, ZnSnOx+ZnAlOx, or SiNx+ZnAlOx composite structure is combined with a protective structure of Ag, AgTi film layers and Ni, Cr, and Ti alloy layers, and an additional AZO or TiOx oxide layer is added to form a multilayer coating system. The thickness and combination of each layer are optimized to enhance weather resistance and damage resistance.
It achieves the workability and easy storage of medium-low transparency tempered low-emissivity coated glass, meets the building's requirements for visibility and hardness, and improves the quality and thermal insulation performance of the tempered film.
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Figure CN116514409B_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of special glass technology, and in particular relates to a medium-low transmittance tempered low-emissivity coated glass. Background Technology
[0002] Low-E glass, also known as low-emissivity glass, is a product with multiple layers of metal or other compound coatings on its surface. It possesses high reflectivity for mid- and far-infrared radiation and excellent thermal insulation properties, making it the most widely used energy-saving building glass on the market. With the development of Low-E technology, market demands for higher emissivity are increasing. Currently, the national standard for high-performance Low-E glass is ≤0.04 emissivity, while the emissivity of high-performance Low-E glass on the market is generally between 0.015 and 0.02. Simultaneously, with increasing demands for outdoor color rendering and strength, tempering is required. However, such coated glass is relatively rare on the market, necessitating further research and development to meet greater market demand. Summary of the Invention
[0003] In view of this, the present invention aims to propose a medium-low transmittance tempered low-emissivity coated glass to solve the problem that the requirements of modern buildings for glass transmittance, hardness and emissivity are difficult to meet in large quantities.
[0004] To achieve the above objectives, the technical solution of the present invention is implemented as follows:
[0005] A medium-low transmittance tempered low-emissivity coated glass includes a glass substrate and a first dielectric layer, a first composite layer, a second dielectric layer, a second composite layer, a third dielectric layer, a third composite layer, and a fourth dielectric layer formed sequentially from bottom to top on the substrate.
[0006] Furthermore, the first dielectric layer is a SiZrNx+SiNx+ZnAlOx composite structure, the second and third dielectric layers are ZnSnOx+ZnAlOx or SiNx+ZnAlOx composite structures, and the fourth dielectric layer is a SiNx layer or a SiNx+SiZrNx composite structure.
[0007] Furthermore, the thickness of the first dielectric layer is 30-50 nm, the thickness of the second dielectric layer is 40-70 nm, the thickness of the third dielectric layer is 70-100 nm, and the thickness of the fourth dielectric layer is 10-30 nm, wherein the thickness of the third dielectric layer is greater than the thickness of the other dielectric layers.
[0008] Furthermore, the first composite layer, the second composite layer, and the third composite layer include a functional layer and a protective layer formed sequentially by sputtering from bottom to top.
[0009] Furthermore, the functional layer in the first and second composite layers is an Ag layer, and the functional layer in the third composite film layer is an Ag or AgTi film layer.
[0010] Furthermore, the thickness of the functional layer in the first composite layer is 4-10 nm, the thickness of the functional layer in the second composite layer is 12-18 nm, and the thickness of the functional layer in the third composite layer is 8-15 nm, wherein the thickness of the functional layer in the second composite layer is higher than the thickness of the functional layer in the first composite layer and the third composite layer.
[0011] Furthermore, the protective layer includes a metal protective layer and an oxide layer disposed outside the metal protective layer. The metal layer includes at least one metal layer selected from Ni, Cr, and Ti, or an alloy layer thereof, with a thickness of 1-5 nm.
[0012] Furthermore, the oxide layer is disposed outside the metal layer and is an AZO layer or a TiOx layer. The thickness of the metal oxide layer in the first composite layer and the second composite layer is 2-8 nm, and the thickness of the metal oxide layer in the third composite layer is 12-20 nm. The thickness of the metal oxide layer in the third composite layer is higher than the sum of the thicknesses of the metal oxide layers in the first composite layer and the second composite layer.
[0013] Furthermore, when the fourth dielectric layer is a single-layer SiNx layer, it also includes a ZrOx layer sputtered on the outside of the SiNx layer, with a ZrOx layer thickness of 4-10 nm.
[0014] Furthermore, when the thickness of the glass substrate is less than 10 mm, the third dielectric layer is a SiNx+ZnAlOx composite structure; when the thickness of the glass substrate is greater than or equal to 10 mm, the third dielectric layer is a ZnSnOx+ZnAlOx composite structure.
[0015] Compared with existing technologies, the medium-low transmittance tempered low-emissivity coated glass of the present invention has the following advantages:
[0016] (1) The medium-low transparency steel low-emissivity coated glass of the present invention is easy to process, easy to store and easy to transport, and can meet the requirements of modern buildings for glass visibility, hardness and radiation.
[0017] (2) The medium-low transmittance tempered low-emissivity coated glass of the present invention solves the problem of low transmittance of the current double silver medium-low transmittance coated glass. Attached Figure Description
[0018] The accompanying drawings, which form part of this invention, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:
[0019] Figure 1This is a cross-sectional view of the medium-low transmittance tempered low-emissivity coated glass described in an embodiment of the present invention.
[0020] Figure 2 This is a diagram illustrating the oxidation and delamination phenomenon on the film surface in Comparative Example 2 of this invention.
[0021] Explanation of reference numerals in the attached figures:
[0022] 1-Glass substrate; 2-First dielectric layer; 3-First composite layer; 4-Second dielectric layer; 5-Second composite layer; 6-Third dielectric layer; 7-Third composite layer; 8-Fourth dielectric layer. Detailed Implementation
[0023] It should be noted that, unless otherwise specified, the embodiments and features described in the present invention can be combined with each other.
[0024] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.
[0025] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art will understand the specific meaning of the above terms in this invention based on the specific circumstances.
[0026] The present invention will now be described in detail with reference to the accompanying drawings and embodiments.
[0027] A type of medium-low transmittance tempered low-emissivity coated glass, such as Figure 1 and Figure 2As shown, it includes a glass substrate 1 and a first dielectric layer 2, a first composite layer 3, a second dielectric layer 4, a second composite layer 5, a third dielectric layer 6, a third composite layer 7 and a fourth dielectric layer 8 formed sequentially from bottom to top on top of it.
[0028] The first dielectric layer is a SiZrNx+SiNx+ZnAlOx composite structure with a thickness of 30-50 nm. The second and third dielectric layers are ZnSnOx+ZnAlOx or SiNx+ZnAlOx composite structures. The thickness of the second dielectric layer is 40-70 nm, and the thickness of the third dielectric layer is 70-100 nm. When the thickness of the glass substrate is less than 10 mm, the third dielectric layer is a SiNx+ZnAlOx composite structure. When the thickness of the glass substrate is greater than or equal to 10 mm, the third dielectric layer is a ZnSnOx+ZnAlOx composite structure.
[0029] The fourth dielectric layer is a SiNx layer or a SiNx+SiZrNx composite structure with a thickness of 10-30 nm. The outermost layer of the fourth dielectric layer also includes a ZrOx layer outside the SiNx layer, with a ZrOx layer thickness of 4-10 nm. The composite layer includes a functional layer and a protective layer from bottom to top. In the first and second composite layers, the functional layer is an Ag layer with a thickness of 4-10 nm, and the second functional layer has a thickness of 12-18 nm. The functional layer of the third composite film is an Ag or AgTi film with a thickness of 8-15 nm. The thickness of the functional layer in the second composite layer is greater than the thickness of the first and third functional layers. The protective layer includes a metal protective layer and an oxide layer disposed outside the metal protective layer. The metal layer includes at least one metal layer or alloy layer of Ni, Cr, and Ti, with a thickness of 1-5 nm. The oxide layer is disposed outside the metal layer and is an AZO layer or a TiOx layer. The thickness of the metal oxide layer in the first and second composite layers is 2-8 nm, and the thickness of the metal oxide layer in the third layer is 12-20 nm. The thickness of the metal oxide layer in the third composite layer is greater than the sum of the thicknesses of the metal oxide layers in the first and second composite layers.
[0030] Reducing the thickness of the metal protective layer, increasing the thickness of the oxide protective layer, and using ZrOx as the outer protective layer significantly improves the weather resistance, damage resistance, and tempering properties of the Low-E film. For glass thicker than 10mm, replacing the outer dielectric layer SiNx with ZnSnOx eliminates internal stress in the film while meeting various processing requirements. Using AgTi alloy as the functional layer provides good tempering resistance, but the thickness needs to be increased to achieve lower emissivity.
[0031] The glass substrate 1 is ordinary white glass. In the above film layer, x represents incomplete oxidation and y represents incomplete nitriding.
[0032]
[0033]
[0034] Table 1
[0035] The color measurement results before and after tempering in Examples 1 and 2 are shown in the table below:
[0036]
[0037] The structure exhibits good tempering stability and a wide range of selectable tempering stability. After tempering for 470 seconds and 510 seconds, the glass color values were measured, and the color deviation was small. Therefore, the requirements for tempering furnace temperature deviation during each tempering are small, and the appearance quality of the tempered film is good, with no film delamination or oxidation observed.
[0038] This product has good heat insulation performance. The heat insulation performance of the insulated glass composed of 6mm Example 1 (M1, the film layer is located on the inside of the outer glass, i.e., the second side of the insulated glass, denoted as #2) structural film glass and 6mm clear glass, and the insulated glass composed of 10mm Example 2 (M2) structural film glass and 6mm clear glass are shown in the table below:
[0039]
[0040] Comparative Example 1: The structure is the same as in Example 1. The AZO in the third composite layer is thinned to 10 nm. In order to obtain a similar color value and transmittance, the thickness of the fourth dielectric layer SiNx is adjusted to 20 nm. After the coating is completed, the film layer is easy to oxidize. The oxidation time is shortened by half compared to Example 1. Furthermore, wiping with alcohol will cause the film to peel off.
[0041] Comparative Example 2: The structure and film thickness were the same as in Example 1, but the glass substrate was replaced with a 10mm glass substrate. After tempering according to the 10mm coating tempering parameters, oxidation and film peeling occurred on the film surface (e.g., ...). Figure 2 (As shown).
[0042] In this solution, reducing the thickness of the metal protective layer, increasing the thickness of the oxide protective layer, and using ZrOx as the outer protective layer greatly improves the weather resistance, damage resistance, and tempering properties of the Low-E film. For glass thicker than 10mm, replacing the outer dielectric layer SiNx with ZnSnOx eliminates internal stress in the film while meeting the various processing requirements of the product. When using AgTi alloy as the functional layer, the tempering resistance is good, but the thickness needs to be increased to obtain a lower emissivity.
[0043] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A medium-low transmittance tempered low-emissivity coated glass, characterized in that: It includes a glass substrate and a first dielectric layer, a first composite layer, a second dielectric layer, a second composite layer, a third dielectric layer, a third composite layer, and a fourth dielectric layer formed sequentially from bottom to top thereon. The first dielectric layer is a SiZrNx+SiNx+ZnAlOx composite structure, the second and third dielectric layers are ZnSnOx+ZnAlOx or SiNx+ZnAlOx composite structures, and the fourth dielectric layer is a SiNx layer or a SiNx+SiZrNx composite structure. The thickness of the first dielectric layer is 30-50nm, the thickness of the second dielectric layer is 40-70nm, the thickness of the third dielectric layer is 70-100nm, and the thickness of the fourth dielectric layer is 10-30nm, wherein the thickness of the third dielectric layer is greater than the thickness of the other dielectric layers. The first composite layer, the second composite layer, and the third composite layer include a functional layer and a protective layer formed by sputtering from bottom to top; The functional layer in the first and second composite layers is an Ag layer, and the functional layer in the third composite film layer is an Ag or AgTi film layer. The thickness of the functional layer in the first composite layer is 4-10 nm, the thickness of the functional layer in the second composite layer is 12-18 nm, and the thickness of the functional layer in the third composite layer is 8-15 nm. The thickness of the functional layer in the second composite layer is greater than the thickness of the functional layer in the first composite layer and the third composite layer. The protective layer includes a metal protective layer and an oxide layer disposed outside the metal protective layer. The metal layer includes at least one metal layer selected from Ni, Cr, and Ti, or an alloy layer thereof, with a thickness of 1-5 nm. The oxide layer is disposed outside the metal layer and is an AZO layer or a TiOx layer. The thickness of the metal oxide layer in the first composite layer and the second composite layer is 2-8 nm, and the thickness of the metal oxide layer in the third composite layer is 12-20 nm. The thickness of the metal oxide layer in the third composite layer is higher than the sum of the thicknesses of the metal oxide layers in the first composite layer and the second composite layer. When the glass substrate thickness is less than 10 mm, the third dielectric layer is a SiNx+ZnAlOx composite structure; when the glass substrate thickness is greater than or equal to 10 mm, the third dielectric layer is a ZnSnOx+ZnAlOx composite structure.
2. The medium-low transmittance tempered low-emissivity coated glass according to claim 1, characterized in that: When the fourth dielectric layer is a single-layer SiNx layer, it also includes a ZrOx layer sputtered on the outside of the SiNx layer, with a thickness of 4-10 nm.
Citation Information
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