Photomask, method of forming a pattern, method of manufacturing a display device, and electronic device

Abstract

A photomask, a method of forming a pattern, a method of manufacturing a display device, and an electronic device are provided. The photomask includes a transparent substrate having a first surface and a second surface opposite each other, a first semi-transparent layer disposed on the first surface of the transparent substrate, a light-blocking layer disposed on the second surface of the transparent substrate, and a second semi-transparent layer disposed between the second surface of the transparent substrate and the light-blocking layer. The second semi-transparent layer has a transmittance higher than that of the first semi-transparent layer.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2025-0001662, filed on January 6, 2025, and all rights arising therefrom, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] Embodiments of this disclosure relate to photomasks, methods for forming patterns using photomasks, methods for manufacturing display devices using photomasks, and electronic devices including display devices. More specifically, embodiments of this disclosure relate to photomasks including light-shielding layers and functional layers, methods for forming patterns using photomasks, methods for manufacturing display devices using photomasks, and electronic devices including display devices. Background Technology

[0004] In display devices such as organic light-emitting diode (OLED) display devices and liquid crystal display (LCD) devices, a display substrate including thin-film transistors (TFTs) and various wirings can be provided, and a display structure including electrodes and an emission layer can be formed on the display substrate.

[0005] To form TFTs, wiring, and electrodes, photolithography processes utilizing photomasks can be used. Recently, photomasks for the stable realization of high-resolution display devices and exposure processes using photomasks have been investigated. Summary of the Invention

[0006] According to embodiments of this disclosure, a photomask with improved exposure and optical properties is provided.

[0007] According to embodiments of the present disclosure, a method for forming patterns using a photomask is provided.

[0008] According to embodiments of this disclosure, a method for manufacturing a display device using a photomask is provided.

[0009] According to embodiments of this disclosure, an electronic device including a display device is provided.

[0010] According to embodiments of this disclosure, a photomask includes a transparent substrate having a first surface and a second surface opposite to each other, a first semi-transparent layer disposed on the first surface of the transparent substrate, a light-shielding layer disposed on the second surface of the transparent substrate, and a second semi-transparent layer disposed between the second surface of the transparent substrate and the light-shielding layer. In such embodiments, the second semi-transparent layer has a higher transmittance than the first semi-transparent layer.

[0011] In some embodiments, the first translucent layer may have a higher reflectivity than the second translucent layer.

[0012] In some embodiments, each of the first and second translucent layers may include a metal, a metal oxide, or an organic material.

[0013] In some embodiments, the light-shielding layer may include a first metal, and the first or second translucent layer may include a second metal different from the first metal.

[0014] In some embodiments, the first metal may include chromium (Cr) or molybdenum (Mo), and the second metal may include aluminum (Al), silver (Ag), copper (Cu), or tungsten (W).

[0015] In some embodiments, the second metal may include aluminum (Al) or silver (Ag).

[0016] In some embodiments, the first translucent layer may include a metal or a metal oxide, and the second translucent layer may include an organic material.

[0017] In some embodiments, the thickness of the first translucent layer may be greater than the thickness of the second translucent layer.

[0018] In some embodiments, the thickness of the first translucent layer may be in the range of about 5 nanometers (nm) to about 20 nm, and the thickness of the second translucent layer may be in the range of about 1 nm to about 10 nm.

[0019] In some embodiments, the first translucent layer and the second translucent layer may comprise the same metal as each other.

[0020] In some embodiments, the thickness of each of the first and second translucent layers may be less than the thickness of the light-shielding layer.

[0021] In some embodiments, the opening may be defined by a light-shielding layer, and the second translucent layer may be exposed through the opening.

[0022] According to embodiments of this disclosure, a method for forming a pattern includes: forming an etch target layer on a substrate; forming a photoresist layer on the etch target layer; arranging a photomask on the photoresist layer; partially removing the photoresist layer using an exposure process and a development process of the photomask to form a photoresist pattern; and partially etching the etch target layer using the photoresist pattern. In such embodiments, the photomask includes a transparent substrate having a first surface and a second surface opposite to each other, a first translucent layer disposed on the first surface of the transparent substrate, a light-shielding layer disposed on the second surface of the transparent substrate, and a second translucent layer disposed between the second surface of the transparent substrate and the light-shielding layer. In such embodiments, the second translucent layer has a higher transmittance than the first translucent layer.

[0023] In some embodiments, an exposure process using a photomask can be performed by generating constructive interference or optical resonance of light irradiated from a light source between a first semi-transparent layer and a second semi-transparent layer of the photomask.

[0024] In some embodiments, constructive interference or optical resonance can be generated by repeatedly generating partial reflections of light from a light source by the second semi-transparent layer and re-reflections of the partially reflected light by the first semi-transparent layer.

[0025] According to embodiments of this disclosure, a method of manufacturing a display device includes forming a transistor including an active layer on a substrate, forming an insulating intermediate layer covering the transistor, forming a contact electrode penetrating the insulating intermediate layer and electrically connected to the active layer, forming a via insulating layer covering the contact electrode on the insulating intermediate layer, forming a via electrode penetrating the via insulating layer and electrically connected to the contact electrode, and forming a light-emitting device electrically connected to the transistor through the via electrode and the contact electrode. In such embodiments, forming the contact electrode or forming the via electrode includes performing a photolithography process using a photomask. In such embodiments, the photomask includes a transparent substrate having a first surface and a second surface opposite to each other, a first semi-transparent layer disposed on the first surface of the transparent substrate, a light-shielding layer disposed on the second surface of the transparent substrate, and a second semi-transparent layer disposed between the second surface of the transparent substrate and the light-shielding layer. In such embodiments, the second semi-transparent layer has a higher transmittance than the first semi-transparent layer.

[0026] In some embodiments, forming a contact electrode may include: forming a photoresist layer on an insulating interlayer; arranging a photomask on the photoresist layer; partially removing the photoresist layer using an exposure process and a development process of the photomask to form a photoresist pattern including a first etched hole; partially etching the insulating interlayer using the first etched hole of the photoresist pattern to form a contact hole in a portion exposing the active layer; and forming a conductive layer that fills the contact hole.

[0027] In some embodiments, forming a via electrode may include: forming a photoresist layer on a via insulating layer; arranging a photomask on the photoresist layer; partially removing the photoresist layer using an exposure process and a development process of the photomask to form a photoresist pattern including a second etched hole; partially etching the via insulating layer using the second etched hole of the photoresist pattern to form a via exposing a portion of the contact electrode; and forming a conductive layer filling the via.

[0028] According to embodiments of this disclosure, an electronic device includes a display device, a memory, and a processor manufactured by the method described above, wherein the processor runs data included in the memory to control the operation of the display device.

[0029] In some embodiments, the electronic device may include virtual reality or augmented reality glasses, a smartphone, a tablet PC, a laptop computer, a television (TV), a desktop monitor, smart glasses, a head-mounted display, a smartwatch, or an in-vehicle display.

[0030] According to an embodiment, a photomask may include a first semi-transparent layer and a second semi-transparent layer having different transmittances or reflectances. In such an embodiment, the light intensity and concentration in the exposure process can be improved through the resonance effect between the first and second semi-transparent layers.

[0031] Therefore, it can effectively prevent the formation of excessive slopes in photoresist and can effectively form patterns of fine dimensions. Attached Figure Description

[0032] Figure 1 This is a schematic cross-sectional view showing a photomask according to an embodiment.

[0033] Figure 2 It is a schematic cross-sectional view used to describe the pattern formation of a photomask using a comparative example.

[0034] Figures 3 to 6 This is a schematic cross-sectional view illustrating a method for forming a pattern according to an embodiment.

[0035] Figures 7 to 16 This is a schematic cross-sectional view illustrating a method of manufacturing a display device according to an embodiment.

[0036] Figure 17A and Figure 17B This is a schematic cross-sectional view showing the light-emitting device included in the display device according to an embodiment.

[0037] Figure 18 This is an exploded perspective view of an electronic device according to an embodiment.

[0038] Figure 19 This is a block diagram of an electronic device according to an embodiment.

[0039] Figure 20 This is a schematic diagram of an electronic device according to an embodiment. Detailed Implementation

[0040] The invention will now be described more fully below with reference to the accompanying drawings, in which various embodiments are illustrated. However, the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The same reference numerals throughout refer to the same elements.

[0041] It should be understood that when an element is referred to as being "on" another element, it can be directly on that other element, or there can be an intermediary element between them. Conversely, when an element is referred to as being "directly on" another element, there is no intermediary element.

[0042] It should be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, areas, layers, and / or segments, these elements, components, areas, layers, and / or segments should not be limited by these terms. These terms are used only to distinguish one element, component, area, layer, or segment from another. Therefore, “first element,” “first component,” “first area,” “first layer,” or “first segment” discussed below may be referred to as a second element, second component, second area, second layer, or second segment without departing from the teachings of this document.

[0043] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, “a,” “an,” “the,” and “at least one” do not indicate a limitation of quantity and are intended to include both the singular and the plural unless the context clearly indicates otherwise. Thus, reference to an element “a,” followed by reference to “the,” in the claims includes one element and multiple elements. For example, “element” has the same meaning as “at least one element” unless the context clearly indicates otherwise. “At least one” will not be construed as limited to “a” or “an.” “Or” means “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. It should also be understood that the terms “comprising” and / or “including” or “containing” and / or “comprises”, when used in this specification, designate the presence of the recited features, areas, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, areas, integrals, steps, operations, elements, components, and / or groups thereof.

[0044] Furthermore, relative terms such as “lower” or “bottom” and “upper” or “top” may be used herein to describe the relationship between one element and another as shown in the figures. It should be understood that relative terms are intended to cover different orientations of the device other than those depicted in the figures. For example, if the device in one of the figures is flipped, an element described as being on the “lower” side of other elements will then be oriented on the “upper” side of other elements. Thus, depending on the specific orientation of the figure, the term “lower” can encompass both “lower” and “upper” orientations. Similarly, if the device in one of the figures is flipped, an element described as being “below” or “under” other elements will then be oriented “above” other elements. Thus, the term “below” or “under” can encompass both “upper” and “lower” orientations.

[0045] As used herein, “about” or “approximately” includes the stated value and means within an acceptable range of deviation for a particular value, as determined by one of ordinary skill in the art taking into account the measurement under discussion and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, “about” can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0046] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It should also be understood that terms such as those defined in common dictionaries shall be interpreted as having a meaning consistent with their meaning in the relevant technical context and in the context of this disclosure, and shall not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0047] This document describes embodiments with reference to cross-sectional views, which are schematic illustrations of idealized examples. Therefore, variations in the shape of the illustrations, resulting from factors such as manufacturing techniques and / or tolerances, are expected. Consequently, the embodiments described herein should not be construed as limited to the specific shapes of the areas shown herein, but rather include deviations in shape, for example, due to manufacturing processes. For instance, areas illustrated or described as flat may generally have rough and / or non-linear characteristics. Furthermore, sharp corners in the illustrations may be rounded. Therefore, the areas shown in the figures are schematic in nature, and their shapes are not intended to show the precise shapes of the areas, nor are they intended to limit the scope of this claim.

[0048] Figure 1 This is a schematic cross-sectional view showing a photomask according to an embodiment.

[0049] refer to Figure 1 An embodiment of the photomask 50 may include a transparent substrate 60 and a light-shielding layer 80. According to embodiments of the present disclosure, the photomask 50 may also include a first semi-transparent layer (first semi-transparent layer) 70a and a second semi-transparent layer (second semi-transparent layer) 70b.

[0050] Among the components or layers included in the photomask 50, the transparent substrate 60 may have the highest transmittance (e.g., transmittance with respect to ultraviolet light used in the exposure process). The transparent substrate 60 may transmit light substantially without altering the phase of the light transmitted through it. According to an embodiment, the transparent substrate 60 may be a quartz substrate.

[0051] The transparent substrate 60 may have a first surface 60a and a second surface 60b. The first surface 60a and the second surface 60b may be opposite to each other. In an embodiment, as shown... Figure 1As shown in the cross-section, the first surface 60a and the second surface 60b can correspond to the top surface and bottom surface of the transparent substrate 60, respectively.

[0052] The first surface 60a can be oriented towards the light source LS during the exposure process (see...). Figure 4 The second surface 60b can be the surface facing the photoresist layer during the exposure process.

[0053] A light-shielding layer 80 may be disposed on a second surface 60b of a transparent substrate 60. The light-shielding layer 80 may include an opening OP formed therethrough. The light-shielding layer 80 may have an opening OP, i.e., the opening OP is defined by the light-shielding layer 80. Light from a light source LS can pass through the opening OP to illuminate the photoresist layer to perform an exposure process. Light illuminating the light-shielding layer 80 can be substantially blocked.

[0054] In an embodiment, for example, the light-shielding layer 80 may include: a metal (first metal) containing chromium (Cr) and / or molybdenum (Mo), an alloy thereof, an oxide thereof, a nitride thereof, or an oxide thereof.

[0055] In some embodiments, the thickness of the light-shielding layer 80 may be in the range of about 50 nanometers (nm) to about 300 nm, or in the range of about 100 nm to about 200 nm.

[0056] In one embodiment, the opening OP may have a hole shape included in the light-shielding layer 80. In another embodiment, the light-shielding layer 80 may include a plurality of light-shielding patterns physically separated from each other. In such an embodiment, the opening OP may have a groove shape formed between adjacent light-shielding patterns.

[0057] A first translucent layer 70a may be disposed on a first surface 60a of a transparent substrate 60. A second translucent layer 70b may be disposed on a second surface 60b of a transparent substrate 60. The first translucent layer 70a may be in direct contact with the first surface 60a of the transparent substrate 60. The second translucent layer 70b may be in direct contact with the second surface 60b of the transparent substrate 60.

[0058] The term "semi-transparent layer" as used herein refers to a layer having a transmittance that is less than that of the transparent substrate 60 but greater than that of the light-shielding layer 80.

[0059] The second translucent layer 70b can be disposed between the transparent substrate 60 and the light-shielding layer 80. The surface of the second translucent layer 70b can be partially exposed through the opening OP.

[0060] According to an embodiment, the transmittance of the first translucent layer 70a (e.g., the transmittance of light from the light source LS) may be less than the transmittance of the second translucent layer 70b. In some embodiments, the reflectance of the first translucent layer 70a may be greater than the reflectance of the second translucent layer 70b.

[0061] According to an embodiment, the reflectivity of each of the first translucent layer 70a and the second translucent layer 70b may be less than the reflectivity of the light-shielding layer 80.

[0062] The materials and thicknesses of the first translucent layer 70a and the second translucent layer 70b can be selected and adjusted within the range that satisfies the above-mentioned transmittance or reflectance relationship.

[0063] According to an embodiment, the first translucent layer 70a and the second translucent layer 70b may include at least one selected from metals, metal oxides and organic materials.

[0064] In some embodiments, the metal or metal oxide included in the first translucent layer 70a and the second translucent layer 70b may comprise a second metal different from the first metal included in the light-shielding layer 80. In some embodiments, for example, the second metal may include at least one selected from aluminum (Al), silver (Ag), copper (Cu), and tungsten (W). In some embodiments, the second metal may include at least one selected from aluminum (Al) and silver (Ag).

[0065] Organic materials may include polyester-based resins, such as polyethylene terephthalate, polyethylene isophthalate, polyethylene naphthalate, and polybutylene terephthalate; cellulose-based resins, such as diacetylcellulose and triacetylcellulose; polycarbonate-based resins; acrylic resins, such as polymethyl methacrylate and polyethyl methacrylate; styrene-based resins, such as polystyrene and acrylonitrile-styrene copolymers; polyolefin-based resins, such as polyethylene, polypropylene, cycloolefins or polyolefins having a norbornene structure, and ethylene-propylene copolymers; vinyl chloride resins; amide-based resins, such as nylon and aromatic polyamides; imide-based resins; polyethersulfone-based resins; sulfone-based resins; polyetheretherketone-based resins; polyphenylene sulfide resins; vinyl alcohol-based resins; vinylidene chloride resins; vinyl butyral-based resins; allyl ester-based resins; polyoxymethylene-based resins; epoxy-based resins; ethyl urethane or ethyl urethane-based resins; silicone-based resins, etc. These can be used individually, or in combination of two or more of them.

[0066] In some embodiments, the first translucent layer 70a may comprise a metal or metal oxide, and the second translucent layer 70b may comprise an organic material. In such embodiments, the thickness of the second translucent layer 70b may be greater than the thickness of the first translucent layer 70a. In embodiments, for example, the thickness of the second translucent layer 70b comprising the organic material may be increased, thereby adjusting the second translucent layer 70b to have a transmittance greater than that of the first translucent layer 70a and less than that of the transparent substrate 60.

[0067] In some embodiments, each of the first translucent layer 70a and the second translucent layer 70b may be a metal layer comprising a second metal or a metal oxide layer comprising an oxide of a second metal. In such embodiments, the thickness of the first translucent layer 70a may be greater than the thickness of the second translucent layer 70b.

[0068] In some embodiments, for example, the thickness of the first translucent layer 70a may be in the range of about 5 nm to about 20 nm, about 5 nm to about 15 nm, or about 5 nm to 10 nm. In some embodiments, for example, the thickness of the second translucent layer 70b may be in the range of about 1 nm to about 10 nm, about 2 nm to about 8 nm, or about 2 nm to about 6 nm.

[0069] In such an embodiment, as described above, even when the first translucent layer 70a and the second translucent layer 70b comprise the same material (e.g., the same metal), the thickness of the first translucent layer 70a can be relatively increased to increase the reflectivity of the first translucent layer 70a relative to the reflectivity in the second translucent layer 70b.

[0070] Figure 2 It is a schematic cross-sectional view used to describe the pattern formation of a photomask using a comparative example.

[0071] refer to Figure 2 The comparative example photomask 55 includes a transparent substrate 60 and a surface formed on the transparent substrate 60 (e.g., Figure 1 The light-shielding layer 80 on the second surface 60b) is omitted. Figure 1 The first semi-transparent layer 70a and the second semi-transparent layer 70b.

[0072] The photomask 55 of the comparative example can be used to perform the photolithography process. For example... Figure 2 As shown, an etching target layer 110 can be formed on the substrate 100, and a photoresist layer 120 can be formed on the etching target layer 110.

[0073] The photomask 55 can be aligned such that the light-shielding layer 80 faces the photoresist layer 120. Thereafter, light can be incident on the photoresist layer 120 through openings included or defined in the light-shielding layer 80, as indicated by the arrows. The exposed portions of the photoresist layer 120 can be removed by a development process to form the photoresist pattern 125.

[0074] For example, portions of the photoresist layer 120 exposed to light energy exceeding a threshold energy may dissolve in the developer solution due to chemical denaturation and be removed.

[0075] According to the comparative example, the light energy (dose: mJ / cm²) passing through photomask 55. 2 It can be distributed from the center outwards in two horizontal directions, for example, according to a Gaussian distribution.

[0076] For example, light energy may be dispersed to the two lateral sides of the region corresponding to the desired target critical size CD. Therefore, light energy may be applied to the photoresist layer 120 on the outer side of the target critical size CD, thereby being partially removed by the development process.

[0077] Therefore, a sloping portion TP is formed in the non-exposed portion of the photoresist layer 120 adjacent to the exposed portion. As the Gaussian distribution widens, the length of the sloping portion TP increases, and the slope of the sloping portion TP may decrease.

[0078] Therefore, subsequent etching processes using photoresist pattern 125 as an etching mask may not be able to obtain a pattern with the desired resolution, pitch, or linewidth and slot width (L / S) from the etched target layer 110.

[0079] For example, in a comparative example, photomask 55 may not be able to efficiently form vias or contact holes with narrow linewidths and high aspect ratios with the desired resolution and reliability.

[0080] However, as will be seen later, for example... Figure 5 According to the reference Figure 1 The photomask 50 of the described embodiment can be used to suppress the dispersion of light during the exposure process and obtain a narrow Gaussian distribution through the resonance effect between the semi-transparent layers 70a and 70b.

[0081] Figures 3 to 6 This is a schematic cross-sectional view illustrating a method for forming a pattern according to an embodiment.

[0082] refer to Figure 3 In an embodiment of the patterning method, an etch target layer 110 may be formed on the substrate 100. A photoresist layer 120 may be formed on the etch target layer 110.

[0083] Substrate 100 may include a semiconductor substrate, a glass substrate, or a polymer substrate. According to an embodiment, substrate 100 may be provided as a support substrate or a backplane substrate for a display device.

[0084] In some embodiments, substrate 100 may include a polymeric material that is transparent and flexible. In such embodiments, substrate 100 may be used in a transparent flexible display device. In embodiments, for example, substrate 100 may include polymeric materials such as polyimide, polysiloxane, epoxy resin, acrylic resin, polyester, etc. In an embodiment, substrate 100 may include polyimide.

[0085] The etched target layer 110 can refer to a layer that is partially removed or patterned by a photolithography process using a photomask 50 and a photoresist layer 120.

[0086] The etched target layer 110 may include at least one selected from the following materials: inorganic insulating materials, such as silicon oxide, silicon nitride, silicon oxynitride, metal oxide, metal nitride, metal oxynitride, etc.; organic insulating materials, such as epoxy resin, siloxane resin, acrylic resin, imide resin, etc.; metals or conductive materials such as transparent conductive oxides (e.g., indium tin oxide (ITO), indium zinc oxide (IZO), etc.); and semiconductor materials, such as oxide semiconductors, amorphous silicon, polycrystalline silicon, etc.

[0087] The etched target layer 110 can be formed by the following methods: deposition processes, such as chemical vapor deposition (CVD), sputtering, atomic layer deposition (ALD); coating processes, such as spin coating, slot coating; or printing processes, such as inkjet printing, screen printing.

[0088] The photoresist layer 120 can be formed by coating and curing (e.g., soft baking) a photoresist composition comprising a photosensitive adhesive resin using the above-described coating process. The photoresist composition can be a negative composition or a positive composition.

[0089] Negative compositions may include adhesive resins that can be photocured by exposure to light. Positive compositions may include photoactive compounds (PACs) that can be denatured by exposure to light to become soluble in developing solutions, or photoacid generators (PAGs) that increase the solubility of the resin by photogenerating acids.

[0090] In the following, embodiments of the method of forming a pattern will be described based on an example in which the photoresist layer 120 is formed from a positive composition.

[0091] refer to Figure 4 In embodiments of the method for forming a pattern, a reference can be used. Figure 1 The photomask 50 described performs the exposure process.

[0092] The photomask 50 can be aligned above the photoresist layer 120 in such a way that the light-shielding layer 80 and the second translucent layer 70b of the photomask 50 can face the photoresist layer 120.

[0093] Subsequently, the light source LS can be positioned above the first translucent layer 70a and can then illuminate light. The light source LS can include an ultraviolet light source. In embodiments, for example, the light source LS can include a G-line, H-line, I-line, ArF, KrF, etc. In some embodiments, a light source having a wavelength in the range of about 360 nm to about 370 nm can be used, for example, an I-line light source.

[0094] Light irradiated from the light source LS can pass through the opening in the photomask 50 and selectively irradiate a portion of the photoresist layer 120. Therefore, the portion of the photoresist layer 120 overlapping the opening can be substantially exposed to form the exposed portion 120b. Thus, the photoresist layer 120 can be divided into the exposed portion 120b and the non-exposed portion 120a.

[0095] refer to Figure 5 The exposed portion 120b can be removed by a developing process using a developing solution. A photoresist pattern 125 can be formed from the remaining unexposed portion 120a after the developing process. The developing solution may include an alkaline compound, such as an ammonium hydroxide-based compound.

[0096] Part of the light emanating from the light source LS can be reflected by the second semi-transparent layer 70b of the photomask 50, thereby generating partially reflected light 40. The partially reflected light 40 can be reflected by the first semi-transparent layer 70a, which has a relatively high reflectivity, thereby generating re-reflected light 45.

[0097] The partially reflected light 40 and the re-reflected light 45 can be repeatedly generated, thereby inducing optical resonance in the photomask 50 or the transparent substrate 60. Therefore, the re-reflected light 45 can be combined or enhanced through constructive interference, and the accumulated light 30 can be irradiated onto the photoresist layer 120 through the opening OP.

[0098] like Figure 5 As shown, through the aforementioned constructive interference and / or resonance effects, the distribution of light energy can become sharp and a Gaussian distribution with a narrow width can be formed. Therefore, a photoresist pattern 125 with relatively vertical sidewall profiles can be formed while suppressing... Figure 2 The generation of the tilted portion TP in the non-exposed portion 120a shown.

[0099] refer to Figure 6The photoresist pattern 125 can be used as an etching mask to partially etch the target layer 110. Therefore, the target pattern 115 can be formed through the remaining target layer 110.

[0100] In some embodiments, the target pattern 115 may include holes formed by removing areas of the etched target layer 110 that overlap with the exposed portion 120b.

[0101] As described above, a photoresist pattern 125 having a desired target critical size CD can be formed using a photomask according to the embodiment. Apertures or target patterns 115 with narrow linewidths / high resolution can be formed using the photoresist pattern 125.

[0102] After the above photolithography process, the photoresist pattern 125 can be removed by ashing and / or stripping processes.

[0103] Figures 7 to 16 This is a schematic cross-sectional view illustrating a method of manufacturing a display device according to an embodiment. (See reference) Figures 7 to 16 The components and structures of the described display device are provided as examples, and the use of the photomask 50 and the structure of the display device disclosed in this application are not limited to these. Figures 7 to 16 Those shown.

[0104] refer to Figure 7 In an embodiment of the method for manufacturing a display device, a buffer layer 210 may be formed on a substrate 100. An active layer ACT may be formed on the buffer layer 210.

[0105] Moisture penetrating the substrate 100 can be blocked by the buffer layer 210, and the diffusion of impurities between the substrate 100 and the structures formed on the substrate 100 can also be blocked by the buffer layer 210. The buffer layer 210 can completely cover the top surface of the substrate 100.

[0106] The buffer layer 210 can be formed as an inorganic insulating material including silicon oxide, silicon nitride, or silicon oxynitride. These can be used alone or in combination. In some embodiments, the buffer layer 210 can have a stacked structure including a silicon oxide layer and a silicon nitride layer. The buffer layer 210 can be formed by a deposition process such as CVD, sputtering, or ALD to include the aforementioned inorganic insulating material.

[0107] In some embodiments, the buffer layer 210 may include an organic layer and may be formed as a multilayer structure of organic and inorganic layers.

[0108] In one embodiment, for example, a semiconductor layer can be formed on the top surface of the buffer layer 210 by a deposition process such as sputtering. The semiconductor layer can be patterned by a photolithography process to be arranged repeatedly / regularly for each pixel to form the active layer ACT.

[0109] In some embodiments, the semiconductor layer may be formed as a silicon compound, such as polycrystalline silicon or amorphous silicon. In some embodiments, the semiconductor layer may be formed as an oxide semiconductor, such as indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), ITZO, etc.

[0110] refer to Figure 8 In an embodiment of the method for manufacturing a display device, a gate insulating layer 220 covering the active layer ACT may be formed on the buffer layer 210. The gate electrode GE may be formed on the gate insulating layer 220.

[0111] The gate insulating layer 220 can be formed from the inorganic insulating material by the above deposition process.

[0112] The first conductive layer can be formed on the top surface of the gate insulating layer 220 by the above deposition process, and the gate electrode GE can be formed by partially removing the first conductive layer by photolithography.

[0113] In some embodiments, for example, the first conductive layer may include metals such as Ag, Mg, Al, W, Cu, Ni, Cr, Mo, Ti, Pt, Ta, Nd, Sc, alloys thereof, or nitrides thereof. In some embodiments, the first conductive layer may be formed as a multilayer structure (e.g., a Ti layer, an Al layer, and a Ti layer).

[0114] Subsequently, the gate electrode GE can be used as an ion implantation mask to implant p-type or n-type dopant into the active layer ACT via an ion implantation process. Therefore, the first contact region CR1 and the second contact region CR2 can be formed on one side and the other side of the active layer ACT, respectively. The first contact region CR1 and the second contact region CR2 can correspond to the source region and the drain region, respectively.

[0115] The portion of the active layer ACT located between the first contact region CR1 and the second contact region CR2, which overlaps with the gate electrode GE in the vertical direction (or the thickness direction of the substrate 100), can be defined as the channel region CN.

[0116] The transistor may be defined by an active layer ACT including a first contact region CR1 and a second contact region CR2, a gate insulating layer 220, and a gate electrode GE. The transistor may be formed as a thin-film transistor (TFT) in a display device and may be used as a pixel driving transistor or a switching transistor.

[0117] refer to Figure 9In an embodiment of the method for manufacturing a display device, a first insulating intermediate layer 230 may be formed on the gate insulating layer 220. The first insulating intermediate layer 230 may be formed from the inorganic insulating material by the above-described deposition process.

[0118] A second conductive layer comprising a metal or alloy substantially the same as or similar to the metal or alloy of the first conductive layer can be formed on the first insulating intermediate layer 230. The overlapping electrode OE can be formed by partially removing the second conductive layer using a photolithography process.

[0119] The overlapping electrode OE may overlap with the gate electrode GE in the vertical direction. In some embodiments, the overlapping electrode OE may serve as the upper gate. In some embodiments, the storage capacitor may be defined by the gate electrode GE, the first insulating intermediate layer 230, and the overlapping electrode OE.

[0120] A second insulating intermediate layer 240 covering the overlapping electrode OE can be formed on the first insulating intermediate layer 230.

[0121] In some embodiments, the overlapping electrode OE may be omitted. In such embodiments, the first insulating intermediate layer 230 and the second insulating intermediate layer 240 may be formed substantially as a single insulating intermediate layer.

[0122] refer to Figure 10 In an embodiment of the method of manufacturing a display device, a photoresist layer 120 may be formed on an insulating intermediate layer (e.g., a second insulating intermediate layer 240).

[0123] In this process, as described above, the photomask 50 according to the embodiment can be disposed above the photoresist layer 120. The photomask 50 can be disposed above the photoresist layer 120 such that the light-shielding layer 80 and the second translucent layer 70b can face the photoresist layer 120.

[0124] The light-shielding layer 80 may have a first opening OP1 and a second opening OP2. The second translucent layer 70b may be exposed through the first opening OP1 and the second opening OP2.

[0125] According to an embodiment, the photomask 50 can be aligned such that the first opening OP1 and the second opening OP2 can overlap with the first contact area CR1 and the second contact area CR2 of the active layer ACT in the vertical direction, respectively.

[0126] refer to Figure 11 In embodiments of the method for manufacturing a display device, it can be achieved by including a reference... Figure 4 and Figure 5 The photolithography process, which involves essentially the same exposure and development processes as described, is used to partially remove the photoresist layer 120 to form a photoresist pattern 125.

[0127] The portion of the photoresist layer 120 that overlaps with the first opening OP1 and the second opening OP2 of the photomask 50 can be converted into an exposed portion, and can then be removed by a development process to form a photoresist pattern 125. The photoresist pattern 125 may be provided with a first etched hole EH1 formed in the space from which the exposed portion has been removed.

[0128] refer to Figure 12 In an embodiment of the method of manufacturing a display device, contact holes CH1 and CH2 can be formed by partially etching the insulating intermediate layers 230 and 240 and the gate insulating layer 220 using an etching process that uses a photoresist pattern 125 as an etching mask.

[0129] In some embodiments, contact holes CH1 and CH2 can be formed by a dry etching process in which etching gas is injected through the first etching hole EH1.

[0130] The contact hole may include a first contact hole CH1 and a second contact hole CH2 that expose the first contact area CR1 and the second contact area CR2 of the active layer ACT, respectively.

[0131] In embodiments of the method for manufacturing a display device, as described above, a first etched hole EH1 with narrow linewidth and steep sidewalls can be formed by the constructive interference and / or optical resonance effect of the photomask 50 according to embodiments of the present disclosure. Therefore, contact holes CH1 and CH2 with high aspect ratios can be effectively formed.

[0132] After the contact holes CH1 and CH2 are formed, the photoresist pattern 125 can be removed by an ashing process and / or a stripping process.

[0133] refer to Figure 13 In an embodiment of the method for manufacturing a display device, a first contact electrode CNT1 and a second contact electrode CNT2 may be formed, which can be in contact with or electrically connected to the first contact area CR1 and the second contact area CR2 through the first contact hole CH1 and the second contact hole CH2, respectively.

[0134] In an embodiment, for example, a third conductive layer filling contact holes CH1 and CH2 may be formed on the second insulating intermediate layer 240. The third conductive layer may be formed by a deposition process such as sputtering to include a metal or alloy substantially the same as or similar to the metal or alloy of the first or second conductive layer. Subsequently, the portion of the third conductive layer formed on the top surface of the second insulating intermediate layer 240 may be patterned by a photolithography process to form the first contact electrode CNT1 and the second contact electrode CNT2.

[0135] The first contact electrode CNT1 and the second contact electrode CNT2 can be used as the source electrode and the drain electrode, respectively.

[0136] A through-hole insulating layer 250 covering the first contact electrode CNT1 and the second contact electrode CNT2 can be formed on the second insulating intermediate layer 240. The through-hole insulating layer 250 can be formed by a coating process such as spin coating, and can include organic materials such as polyimide, epoxy resin, acrylic resin, polyester, silicone resin, benzocyclobutene (BCB), etc. The through-hole insulating layer 250 can be used as a planarization layer.

[0137] refer to Figure 14 In an embodiment of the method for manufacturing a display device, a photoresist layer 120 may be formed on the through-hole insulating layer 250. In this process, a photomask 50 according to the embodiment described above may be disposed on the photoresist layer 120. The photomask 50 may be disposed on the photoresist layer 120 such that the light-shielding layer 80 and the second translucent layer 70b may face the photoresist layer 120. The light-shielding layer 80 may include an opening OP. The second translucent layer 70b may be exposed through the opening OP.

[0138] According to an embodiment, the photomask 50 can be aligned in such a way that the opening OP can overlap with the top surface of the contact electrode (e.g., the second contact electrode CNT2).

[0139] refer to Figure 15 In embodiments of the method for manufacturing a display device, it can be achieved by including a reference... Figure 4 and Figure 5 The photolithography process, which is essentially the same as the exposure and development process described, partially removes the photoresist layer 120 to form a photoresist pattern 125.

[0140] A portion of the photoresist layer 120 that overlaps with the opening OP of the photomask 50 can be converted into an exposed portion, and then the exposed portion can be removed by a development process to form a photoresist pattern 125. The photoresist pattern 125 may include a second etched hole EH2 formed in the space from which the exposed portion has been removed.

[0141] The via VH can be formed by partially etching the via insulating layer 250 using an etching process that employs photoresist pattern 125 as an etching mask. The top surface of the second contact electrode CNT2 can be exposed through the via VH.

[0142] In some embodiments, the via VH can be formed by a dry etching process in which etching gas is injected through the second etching hole EH2.

[0143] refer to Figure 16In an embodiment of the method of manufacturing a display device, a first electrode 180 filling the via VH may be formed on the via insulating layer 250. The first electrode 180 may include a via electrode and may include a pixel electrode of a light-emitting device as described later.

[0144] In some embodiments, the first electrode 180 includes a plurality of through-hole electrodes, and the uppermost through-hole electrode among the through-hole electrodes can be used as a pixel electrode.

[0145] In one embodiment, for example, a fourth conductive layer filling the via VH can be formed on the top surface of the via insulating layer 250. The first electrode 180 can be formed by partially removing the fourth conductive layer on the top surface of the via insulating layer 250 using a photolithography process.

[0146] The first electrode 180 can be used as a pixel electrode or anode, and can include a high work function conductive material that can promote hole injection. The first electrode 180 can be formed as a transmission electrode. The fourth conductive layer or the first electrode 180 can be formed as a transparent conductive oxide, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and indium tin zinc oxide (ITZO).

[0147] The first electrode 180 may be formed as a semi-transparent electrode or a reflective electrode. The fourth conductive layer or the first electrode 180 may be formed as at least one metal, a compound thereof (such as LiF), or an alloy thereof selected from Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, In, Sn, Zn, etc.

[0148] The fourth conductive layer or the first electrode 180 can be formed as a single-layer structure or a multi-layer structure. In an embodiment, for example, the first electrode 180 can have a three-layer structure of ITO / Ag / ITO.

[0149] A pixel defining layer (PDL) may be formed on the via insulating layer 250 to at least partially expose the top surface of the first electrode 180. The PDL may cover the peripheral portion of the first electrode 180.

[0150] The light-emitting area can be defined by the sidewalls of the pixel-defining layer (PDL). In an embodiment, for example, the green, blue, and red light-emitting areas can be separated and defined by the PDL.

[0151] For example, the pixel-defining layer (PDL) can be formed using organic materials such as polysiloxane resins, polyimide resins, and acrylic resins. The PDL may include coloring materials, such as black pigments / dyes, dispersed in the resin material.

[0152] The light-emitting portion EL can be formed on the first electrode 180 and the pixel defining layer PDL. The light-emitting portion EL may include an organic light-emitting layer that can be independently patterned for each of the red, green and blue pixels to generate light of a different color for each pixel.

[0153] In one embodiment, the light-emitting element (EL) may extend continuously and commonly across multiple pixels. In such an embodiment, the light-emitting element (EL) may include a white emitting layer or a blue emitting layer. In another embodiment, the light-emitting element (EL) may include emitting layers corresponding to various different colors of light, and may include a tandem stacked structure.

[0154] In an embodiment, for example, the light-emitting portion (EL) can be formed by processes such as thermal deposition, vapor deposition, vacuum deposition, spin coating, inkjet printing, laser printing, casting, laser thermal transfer, etc.

[0155] Reference Figure 17A and Figure 17B A more detailed description of light-emitting devices, including the light-emitting element (EL).

[0156] The second electrode 190 can be formed on the light-emitting portion EL. The second electrode 190 can be a common electrode that can be continuously provided in multiple light-emitting areas or pixels.

[0157] The second electrode 190 can be used as an electron injection electrode or a cathode. The second electrode 190 may include metals, alloys, conductive compounds, etc., with low work functions.

[0158] In embodiments, for example, the second electrode 190 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), lithium aluminum (Al-Li), calcium (Ca), magnesium indium (Mg-In), magnesium silver (Mg-Ag), ytterbium (Yb), silver ytterbium (Ag-Yb), ITO, IZO, etc. These can be used individually or in combination.

[0159] The second electrode 190 can be formed as a transmission electrode, a semi-transparent electrode, or a reflection electrode. The second electrode 190 can have a single-layer structure or a multi-layer structure.

[0160] The light-emitting device can be defined by the first electrode 180, the light-emitting portion EL, and the second electrode 190 as described above. The light-emitting device can be provided as an organic light-emitting diode (OLED) device.

[0161] The encapsulation layer TFE can be formed on the second electrode 190. The encapsulation layer TFE can be disposed on the pixel defining layer PDL and the light-emitting device to protect the light-emitting device from moisture or oxygen.

[0162] The encapsulation layer TFE may include at least one selected from the following: an inorganic layer, including silicon nitride (SiN).x ), silicon dioxide (SiO) x Indium tin oxide, indium zinc oxide, or any combination thereof; an organic layer, including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), epoxy resin (e.g., aliphatic glycidyl ether (AGE)), or any combination thereof; and a combination of inorganic and organic layers.

[0163] The encapsulation layer TFE can be formed as a single layer or a multilayer structure. In some embodiments, the encapsulation layer TFE can have a sequentially stacked structure of a first inorganic layer, an organic layer, and a second inorganic layer.

[0164] In some embodiments, a color control layer overlapping the light-emitting part EL can be disposed on the encapsulation layer TFE. The color control layer may include a color conversion layer containing quantum dots and / or a color filter.

[0165] According to the above embodiments, a photomask 50 according to embodiments of the present disclosure can be used to form contact holes or through holes for forming contact electrodes or through-hole electrodes. Therefore, holes for forming wiring / electrodes with fine linewidths can be formed to achieve desired resolution and reliability.

[0166] The use or application of photolithography processes using photomask 50 according to embodiments of the present disclosure is not limited to aperture formation processes. In embodiments, for example, photomask 50 according to embodiments of the present disclosure can be used in photolithography processes for forming semiconductor layers of active layer ACT and / or in photolithography processes for forming first to fourth conductive layers of gate electrode GE, overlapping electrode OE, contact electrodes CNT1 and CNT2 and / or first electrode 180.

[0167] Figure 17A and Figure 17B This is a schematic cross-sectional view showing the light-emitting device included in the display device according to an embodiment.

[0168] refer to Figure 17A In an embodiment, the light-emitting device may include the first electrode 180, the second electrode 190 as described above, and the light-emitting portion EL disposed between the first electrode 180 and the second electrode 190.

[0169] The light-emitting part (EL) may include a hole transport layer (HTL), an emitter layer (EML), and an electron transport layer (ETL). According to an embodiment, the hole transport layer (HTL), the emitter layer (EML), the electron transport layer (ETL), and the second electrode 190 may be sequentially stacked from the top surface of the first electrode 180.

[0170] The emission layer EML may include an organic light-emitting material having red, green, or blue emission properties. In embodiments, for example, the emission layer EML may include a fluorescent host and / or a host for a phosphorescent light-emitting device, and may also include a fluorescent dopant, a phosphorescent dopant, and / or a thermally activated delayed fluorescence (TADF) dopant.

[0171] In embodiments, for example, the hole transport layer (HTL) may include hole transport materials such as m-MTDATA (4,4',4"-[tris(3-methylphenyl)phenylamino]triphenylamine), TDATA (4,4',4"-tris(N,N-diphenylamino)triphenylamine), 2-TNATA (4,4',4"-tris[N(2-naphthyl)-N-phenylamino]-triphenylamine), NPB (N,N'-di(naphthyl-1-yl)-N,N'-diphenylbenzidine), TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine), TCTA (4,4',4"-tris(N-carbazolyl)triphenylamine), PEDOT / PSS (poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate)), etc.

[0172] In embodiments, for example, the electron transport layer (ETL) may include electron transport materials such as anthracene compounds, Alq3 (tris(8-hydroxyquinoline)aluminum), TPBi (1,3,5-tris(1-phenyl-1H-benzis[d]imidazol-2-yl)benzene), BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen (4,7-diphenyl-1,10-phenanthroline), TAZ (3-( (4-Biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole), NTAZ (4-(naphthyl-1-yl)-3,5-diphenyl-4H-1,2,4-triazole), tBu-PBD (2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq (bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-ol)aluminum), etc.

[0173] In some embodiments, a hole injection layer may also be provided between the first electrode 180 and the hole transport layer HTL. An electron injection layer may also be provided between the second electrode 190 and the electron transport layer ETL.

[0174] In some embodiments, the hole transport layer (HTL) and the electron transport layer (ETL) can be formed as a common layer that extends continuously across multiple pixels. The emission layer (EML) can be independently patterned for each pixel of a different color.

[0175] refer to Figure 17BIn another embodiment, the light-emitting portion EL may include multiple light-emitting structures ES1, ES2, and ES3. Each of the light-emitting structures ES1, ES2, and ES3 may include a hole transport layer, an emission layer, and an electron transport layer. According to the embodiment, Figure 17B The light-emitting device can be a light-emitting device with a series structure that can generate white light or blue light.

[0176] Charge generation layers CGL1 and CGL2 can be disposed between adjacent light-emitting structures ES1, ES2, and ES3. Charge generation layers CGL1 and CGL2 can include p-type charge generation layers and / or n-type charge generation layers. Charge generation layers CGL1 and CGL2 can include a first charge generation layer CGL1 disposed between the first light-emitting structure ES1 and the second light-emitting structure ES2, and a second charge generation layer CGL2 disposed between the second light-emitting structure ES2 and the third light-emitting structure ES3.

[0177] According to an embodiment, the first light-emitting structure ES1, the first charge-generating layer CGL1, the second light-emitting structure ES2, the second charge-generating layer CGL2, the third light-emitting structure ES3, and the second electrode 190 can be sequentially stacked from the top surface of the first electrode 180.

[0178] The light-emitting element (EL) included in the light-emitting device can be provided as a common layer for multiple pixels. In some embodiments, the light-emitting element (EL) can emit blue light or white light, and the color for each pixel can be achieved through the aforementioned color control layer.

[0179] although Figure 17B An embodiment of a light-emitting device having a three-layer series structure is shown, but in another embodiment, the light-emitting device may have a series structure comprising two, four or more light-emitting structures.

[0180] Figure 18 This is an exploded perspective view of an electronic device according to an embodiment.

[0181] According to an embodiment, the electronic device ED can be implemented in the form of a mobile phone (smartphone), tablet computer, personal computer (PC), etc., including the display device described above. The display device may include a structure formed by using the photolithography process of the photomask 50 described above.

[0182] refer to Figure 18 An embodiment of the electronic device ED may include a window structure WS, a display device DD, and a housing HS. The display device DD may include a display panel DP, which includes transistors and light-emitting devices as described above. The housing HS, the display device DD, and the window structure WS may be stacked sequentially along a third direction.

[0183] The window structure WS can provide an external display surface that can be recognized by the user, such as the viewing surface of a mobile phone, and can include a transparent material film. In embodiments, for example, the window structure WS can include glass (e.g., ultra-thin glass (UTG)), a hard-coated film, a plastic film, etc.

[0184] The outer surface of the window structure WS may include an effective area AA and a peripheral area PA. The effective area AA provides the surface from which the image of the display device DD is displayed and input to it via user touch / command. The peripheral area PA may substantially correspond to the bezel area of ​​the electronic device ED.

[0185] The display device DD or display panel DP may include a display area DA and a non-display area NDA. The display area DA of the display panel DP may substantially correspond to or overlap with the effective area AA of the window structure WS. The non-display area NDA of the display panel DP may substantially correspond to or overlap with the peripheral area PA of the window structure WS.

[0186] In some embodiments, functional device regions E1 and E2 may be included in the effective region AA of the window structure WS. In one embodiment, for example, the first functional device region E1 may be included at one end of the effective region AA and may be implemented, for example, in the form of a camera hole. The second functional device region E2 may be used as a fingerprint sensing region.

[0187] In an embodiment, for example, a sensor structure for touch sensing or fingerprint sensing may be disposed in the display panel DP or between the window structure WS and the display panel DP.

[0188] The housing HS can serve as a frame structure or rear housing for the display device DD or electronic device ED. A cover panel can be disposed between the housing HS and the display panel DP. The housing HS or cover panel may include a plate (e.g., an SUS plate) supporting the display panel DP. The housing HS or cover panel may include an elastomer for absorbing impacts from the display device DD.

[0189] Figure 19 This is a block diagram of an electronic device according to an embodiment.

[0190] refer to Figure 19 The electronic device 10 according to the embodiment may include a display module 11, a processor 12, a memory 13 and a power module 14.

[0191] The processor 12 may include a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and / or a controller.

[0192] Data information used for the operation of processor 12 or display module 11 can be stored in memory 13. When processor 12 runs an application stored in memory 13, image data signals and / or input control signals can be sent to display module 11, and display module 11 can process the received signals and output image information through the display screen.

[0193] The power module 14 may include a power supply module (such as a power adapter or battery device) and a power conversion module that converts the power supplied by the power supply module to generate power for the operation of the electronic device 10.

[0194] At least one of the components of the electronic device 10 described above may be included in the display device according to the above embodiments. Additionally, some of the individual modules functionally included in a single module may be included in the display device, while other individual modules may be provided separately from the display device. In embodiments, for example, display module 11 may include the display device, while processor 12, memory 13, and power module 14 may be provided in the electronic device 10 in the form of a different device than the display device.

[0195] Figure 20 This is a schematic diagram of an electronic device according to an embodiment.

[0196] refer to Figure 20 Non-limiting examples of various electronic devices that utilize the display device according to the above embodiments include electronic devices for displaying images, such as smartphones 10_1a, tablet PCs 10_1b, laptop computers 10_1c, televisions (TVs) 10_1d, desktop monitors 10_1e, etc.; wearable electronic devices including display modules, such as smart glasses 10_2a, head-mounted displays 10_2b, smartwatches 10_2c, etc.; and vehicle electronic devices 10_3 including display modules, such as central information displays (CIDs), head-up displays, interior mirror displays, etc., disposed on vehicle instrument panels, center consoles, dashboards, etc. The electronic devices may include virtual reality glasses or augmented reality glasses.

[0197] This invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

[0198] Although the invention has been specifically shown and described with reference to embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit or scope of the invention as defined by the appended claims.

Claims

1. Photomask, including: A transparent substrate having a first surface and a second surface opposite to each other; A first semi-transparent layer is disposed on the first surface of the transparent substrate; A light-shielding layer is disposed on the second surface of the transparent substrate; as well as A second semi-transparent layer is disposed between the second surface of the transparent substrate and the light-shielding layer. The second translucent layer has a higher transmittance than the first translucent layer.

2. The photomask according to claim 1, wherein, The first translucent layer has a higher reflectivity than the second translucent layer.

3. The photomask according to claim 1, wherein, Each of the first translucent layer and the second translucent layer comprises a metal, a metal oxide, or an organic material.

4. The photomask according to claim 3, wherein, The light-shielding layer includes a first metal, and The first or second translucent layer comprises a second metal that is different from the first metal.

5. The photomask according to claim 4, wherein, The first metal includes chromium or molybdenum, and The second metal includes aluminum, silver, copper, or tungsten.

6. The photomask according to claim 5, wherein, The second metal includes aluminum or silver.

7. The photomask according to claim 3, wherein, The first translucent layer comprises the metal or the metal oxide, and The second translucent layer comprises the organic material.

8. The photomask according to claim 1, wherein, The thickness of the first translucent layer is greater than the thickness of the second translucent layer.

9. The photomask according to claim 8, wherein, The thickness of the first translucent layer is in the range of 5 nm to 20 nm, and The thickness of the second semi-transparent layer is in the range of 1 nm to 10 nm.

10. The photomask according to claim 8, wherein, The first translucent layer and the second translucent layer comprise the same metal as each other.

11. The photomask according to claim 1, wherein, The thickness of each of the first and second translucent layers is less than the thickness of the light-shielding layer.

12. The photomask according to claim 1, wherein, The opening is defined by the light-shielding layer, and The second translucent layer is exposed through the opening in the light-shielding layer.

13. A method for forming a pattern, the method comprising: Form the etch target layer on the substrate; A photoresist layer is formed on the etched target layer; The photomask according to any one of claims 1 to 12 is disposed on the photoresist layer; A photoresist pattern is formed by partially removing the photoresist layer using the exposure and development processes of the photomask. as well as The photoresist pattern is used to partially etch the target layer.

14. A method for manufacturing a display device, the method comprising: A transistor including an active layer is formed on a substrate; An insulating intermediate layer is formed to cover the transistor; A contact electrode is formed that penetrates the insulating intermediate layer and is electrically connected to the active layer; An insulating layer with through holes covering the contact electrodes is formed on the insulating intermediate layer; A through-hole electrode is formed that penetrates the through-hole insulating layer and is electrically connected to the contact electrode; as well as A light-emitting device is formed that is electrically connected to the transistor through the through-hole electrode and the contact electrode. Forming the contact electrode or the through-hole electrode includes performing a photolithography process using a photomask according to any one of claims 1 to 12.

15. Electronic devices, including: The display device manufactured by the method according to claim 14; Memory; as well as The processor executes the data contained in the memory to control the operation of the display device.

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