Electro-optic modulation structures, systems, methods, and apparatus

Abstract

The application provides an electro-optical modulation structure, system, method and device, and the electro-optical modulation structure comprises: a first multimode interference coupler and a second multimode interference coupler, which are symmetrically arranged along a first direction and are respectively used for beam splitting and beam combining of light; a group of electro-optical modulation and light polarizers, comprising: a first electro-optical modulation and light polarizer and a second electro-optical modulation and light polarizer, which are symmetrically arranged along a second direction between the first multimode interference coupler and the second multimode interference coupler and are coupled based on surface plasmon polaritons, and are used for electro-optical modulation of the split light input from the first multimode interference coupler and output of the electro-optically modulated split light to the second multimode interference coupler for beam combining; and an extrinsic mode reflection structure used for connecting the first electro-optical modulation and light polarizer and the second electro-optical modulation and light polarizer. The scheme disclosed by the application reduces the area of integration of each device and is conducive to on-chip integration.

Description

Technical Field

[0001] This invention relates to the field of optical chips, and more particularly to an electro-optic modulation structure, system, method, and device. Background Technology

[0002] Electronic integrated circuits use electrical signals as information carriers, while photonic chips use higher-frequency light waves. Compared to electronic integrated circuits or electrical interconnect technologies, photonic integrated circuits and optical interconnects exhibit lower transmission loss, wider transmission bandwidth, smaller time delay, and stronger resistance to electromagnetic interference.

[0003] The performance of optical chips mainly considers two aspects: the integration level of the optical chip and the size of the optical device. In the field of optical chip integration, the following problems exist: Electro-optic modulation generally requires both a modulator and a polarizer. Since the two devices cannot be combined into one, the area of ​​the optical chip is too large, which is not conducive to on-chip integration. Furthermore, when multiple polarizers are required in the system, the chip area will increase rapidly, which is not conducive to on-chip integration. Summary of the Invention

[0004] This disclosure summarizes various aspects of the embodiments and should not be construed as limiting the claims. Other implementations are contemplated based on the techniques described herein, as will be apparent to those skilled in the art upon studying the following drawings and detailed descriptions, and these implementations are intended to be included within the scope of this application.

[0005] In view of this, the present invention proposes an electro-optic modulation structure, system, method and device, which at least solves the above-mentioned problems that electro-optic modulation generally requires both a modulator and a polarizer, and that the inability to combine the two devices into one results in an excessively large area of ​​the optical chip, which is not conducive to on-chip integration. Furthermore, when multiple polarizers are required in the system, the chip area will increase rapidly, which is not conducive to on-chip integration.

[0006] Based on the above objectives, one aspect of the present invention provides an electro-optic modulation structure, comprising: a first multimode interference coupler and a second multimode interference coupler, symmetrically arranged along a first direction, for splitting and combining light, respectively; a set of electro-optic modulators and polarizers, comprising: a first electro-optic modulator and polarizer and a second electro-optic modulator and polarizer, symmetrically arranged between the first and second multimode interference couplers along a second direction, and coupled based on surface plasmon polaritons, for electro-optic modulation of the split light input from the first multimode interference coupler and outputting the electro-optically modulated split light to the second multimode interference coupler for combining; and an intrinsic mode reflection structure for connecting the first and second electro-optic modulators and polarizers.

[0007] In some embodiments, the first electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator respectively include: a GS electrode with impedance matching characteristics, a grating-type eigenmode reflection structure surrounded by the GS electrode, and an eigenmode reflection structure with a metal-dielectric connection located between the GS electrodes.

[0008] In some embodiments, the cladding layer of the first electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator is at least one of SiO2, Si3N4, and Al2O3.

[0009] In some embodiments, the eigenmode reflection structure includes an eigenmode reflection structure connected by a metal-dielectric-metal link for filtering out eigenmodes within the plasma waveguides on the surfaces of the first electro-optic modulator and polarizer and the second electro-optic modulator and polarizer.

[0010] In some embodiments, the distance between the metal and the medium in the eigenmode reflective structure is 5 to 200 nanometers, the width of the medium is 10 to 300 nanometers, and the length of the metal-medium-metal relationship is 0.1 to 9 micrometers.

[0011] In another aspect of the present invention, an electro-optic modulation system is provided, comprising: at least one set of electro-optic modulation structures, including two electro-optic modulation structures as described above symmetrically arranged along a second direction; a polarization beamsplitter disposed on the input side of the set of electro-optic modulation structures, for separating input light into a transverse electric field mode and a transverse magnetic field mode and outputting them to the two electro-optic modulation structures respectively; and a polarization beam combiner disposed on the output side of the set of electro-optic modulation structures, for combining the beams of light that have been electro-optically modulated by the set of electro-optic modulation structures and outputting them.

[0012] In some embodiments, a medium is included between the two electro-optic modulation structures to block coupling crosstalk between the two electro-optic modulation structures symmetrically arranged along the second direction.

[0013] In some embodiments, the system further includes two polarization rotators for converting the transverse electric field mode and the transverse magnetic field mode to each other. One polarization rotator is connected between the polarization beamsplitter and the input of an electro-optic modulation structure to convert the transverse magnetic field mode, and the other polarization rotator is connected between the output of another electro-optic modulation structure and the polarization beam combiner to convert the transverse electric field mode.

[0014] Another aspect of this invention provides a method for electro-optic modulation, comprising: separating input light into a transverse electric field mode and a transverse magnetic field mode using a polarization beam splitter; feeding the transverse electric field mode and the transverse magnetic field mode into two symmetrically arranged electro-optic modulation structures in a set of electro-optic modulation structures for electro-optic modulation; and inputting the beam split light after electro-optic modulation by the two electro-optic modulation structures into the polarization beam combiner for beam combining and output.

[0015] In another aspect of the present invention, a computer device is also provided, including at least one processor; and a memory storing computer instructions executable on the processor, which, when executed by the processor, implement the steps of the above-described method.

[0016] In another aspect of the present invention, a computer-readable storage medium is provided, which stores a computer program that, when executed by a processor, implements the method steps described above.

[0017] The present invention has at least the following beneficial effects: The electro-optic modulation structure proposed in this invention is based on surface plasmon polaritons for coupling, which enables it to have the dual functions of an electro-optic modulator and a polarizer. It also has an eigenmode filtering structure, which reduces the integration area of ​​each device, which is beneficial for on-chip integration. At the same time, it reduces the number of devices used in the electro-optic modulation structure, and greatly improves the system integration without affecting the electro-optic modulation. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other embodiments can be obtained based on these drawings without creative effort.

[0019] Figure 1 The diagram shown is a schematic representation of an electro-optic modulation structure provided in an embodiment of this application.

[0020] Figure 2 The diagram shown is a structural schematic of an electro-optic modulator and optical polarizer provided in an embodiment of the present invention.

[0021] Figure 3 The diagram shown is a structural schematic of an electro-optic modulation system provided in an embodiment of the present invention;

[0022] Figure 4 A flowchart of an electro-optic modulation method provided in an embodiment of this application is shown;

[0023] Figure 5This diagram illustrates the structure of a computer device according to an embodiment of the present invention.

[0024] Figure 6 A schematic diagram of the structure of a computer-readable storage medium provided in an embodiment of the present invention is shown. Detailed Implementation

[0025] The following describes embodiments of the present disclosure. However, it should be understood that the disclosed embodiments are merely examples, and other embodiments may take various alternative forms. The drawings are not necessarily drawn to scale; certain functions may be exaggerated or minimized to show details of particular components. Therefore, the specific structural and functional details disclosed herein should not be construed as limiting, but merely as a representative basis for teaching those skilled in the art to use the invention in various ways. As will be understood by those skilled in the art, various features shown and described with reference to any of the drawings may be combined with features shown in one or more other drawings to produce embodiments not explicitly shown or described. The combinations of features shown provide representative embodiments for typical applications. However, various combinations and modifications of features consistent with the teachings of this disclosure may be desirable for certain particular applications or implementations.

[0026] In this application, when an element or part is referred to as "on," "joined to," "connected to," or "coupled to" another element or part, that element or part may be directly joined, connected to, or coupled to the other element or part, or there may be an element or part intervening therebetween. Conversely, when an element is referred to as "directly on," "directly joined to," "directly connected to," or "directly coupled to" another element or part, there may be no element or part intervening therebetween. Other terms used to describe the relationship between elements should be interpreted in a similar manner.

[0027] Furthermore, it should be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or apparatus that comprises a list of elements may include not only those elements but also elements not expressly listed or inherent to such process, method, article, or apparatus.

[0028] A multimode interference coupler (MMI coupler) refers to the self-image effect formed by the interference of different modes in a multimode waveguide. In a multimode waveguide, multiple guided modes interfere with each other along the direction of wave propagation, and one or more replicated images of the input field appear at periodic intervals. This is the self-image of the multimode waveguide.

[0029] Surface plasmon polaritons (SPPs) are electromagnetic waves that propagate in the infrared or visible light band at metal-dielectric or metal-air interfaces. SPPs elucidate that this physical phenomenon involves both the movement of electrons in the metal (surface plasmons) and electromagnetic waves (polarons) propagating in air or dielectrics.

[0030] A Mach-Zehnder modulator (MZM) splits the input light into two equal signals, each entering one of the two optical branches of the modulator. MZM modulators are currently the mainstream modulators capable of high-quality coding, mostly based on lithium niobate material systems, which require a size on the order of cm². Silicon-based modulators have seen gradual performance improvements in recent years, operating at bandwidths up to 100 GHz, with lengths ranging from hundreds of micrometers to millimeters. While resonant silicon ring modulators or germanium-based electroabsorption modulators are smaller in size, they struggle to implement advanced coding modulation formats. To date, high-capacity transmission still primarily relies on MZM modulators.

[0031] One or more embodiments of this application will now be described with reference to the accompanying drawings.

[0032] Based on the above objectives, the first aspect of the present invention provides an embodiment of an electro-optic modulation structure. Figure 1 The diagram shown is a schematic representation of an electro-optic modulation structure provided in an embodiment of this application. Figure 1 As shown, an electro-optic modulation structure includes: a first multimode interference coupler (1×2 MMI with 1 input and 2 outputs) 101 and a second multimode interference coupler (2×1 MMI with 2 inputs and 1 output) 102, which are symmetrically arranged along the first direction X, and are used to split and combine the input beam, respectively. The optoelectronic modulation structure also includes a set of electro-optic modulators and polarizers, including: a first electro-optic modulator and polarizer 103 and a second electro-optic modulator and polarizer 104, which are symmetrically arranged between the first multimode interference coupler 101 and the second multimode interference coupler 102 along the second direction Y, and are coupled based on surface plasmon polaritons (SPPs). They are used to electro-optically modulate the beam split from the first multimode interference coupler 101 and output the electro-optically modulated beam split to the second multimode interference coupler 102 for beam combining; and an eigenmode reflection structure 105, which is used to connect the first electro-optic modulator and polarizer 103 and the second electro-optic modulator and polarizer 104. In some embodiments of the present invention, the eigenmode reflection structure 105 can be a metal-dielectric-metal structure. The dielectric waveguide of the eigenmode filtering structure 105 is generally a silicon waveguide, which is used to further filter out the eigenmodes in the surface plasmon waveguide.

[0033] In several embodiments of the present invention, the spacing d between the metal and the dielectric is... m-i The dielectric width w in a metal-dielectric-metal structure can be 5–200 nm. i The wavelength range can be 10–300 nm, and the length of the metal-dielectric-metal structure can be 0.1–9 μm. The metal used in the metal-dielectric-metal structure generally includes, but is not limited to, materials such as Au and Ag, and a thin layer of chromium or other metal is generally present beneath the metal. Further, in some embodiments of the present invention, the cladding layers of the first electro-optic modulator and polarizer 103 and the second electro-optic modulator and polarizer 104 generally include, but are not limited to, materials such as SiO2, Si3N4, Al2O3, or polymers. The dielectric within the first electro-optic modulator and polarizer 103 and the second electro-optic modulator and polarizer 104 includes, but is not limited to, materials such as Si. The above electro-optic modulators and polarizers have low insertion loss characteristics; in the wavelength range of 1310–1550 nm, their insertion loss value is generally 1.12–1.55 dB. Simultaneously, the electro-optic modulators and polarizers based on surface plasmon polariton (SPP) coupling have the characteristic of small size, with a device size not exceeding 25 micrometers, and can be used in scenarios with bandwidths greater than 15 GHz.

[0034] Figure 2 The diagram shown is a structural schematic of the electro-optic modulator and optical polarizer provided in an embodiment of this application. Figure 2 As shown, the electro-optic modulator and polarizer includes a ground-signal (GS) electrode 108 with impedance matching characteristics, a grating-type eigenmode reflection structure 106 surrounded by the GS electrode 108, and an eigenmode reflection structure 107 with a metal-dielectric connection located between the GS electrodes 108, such as the metal-dielectric eigenmode reflection structure 107 in the metal-dielectric-metal configuration mentioned above. The characteristic impedance of the GS electrode 108 is typically 50Ω or 75Ω, or other desired values. The length L of the electro-optic modulator and polarizer is typically 0.5–15 μm, and the width W is typically 0.5–9 μm. slot The size is generally 0.02–0.25 μm, w SPP The size is generally 0.04–0.3 μm, w DThe size of the λ is typically 0.35–0.65 μm, and the size of Λ is typically 0.02–2 μm. The angle α < β, and the difference between them, β-α, is typically less than 15°. Because the SPP-based electro-optic modulation structure has polarization selection capabilities, no additional polarizing device is required, significantly improving system integration and reducing optical energy loss. Specifically, it simultaneously functions as both an electro-optic modulator and a polarizer, and incorporates an eigenmode filtering structure, reducing the integration area of ​​individual devices and facilitating on-chip integration. This also reduces the number of devices used in the electro-optic modulation structure, greatly improving system integration without compromising electro-optic modulation.

[0035] A second aspect of this invention provides an electro-optic modulation system. Figure 3 The diagram shown is a structural schematic of an electro-optic modulation system provided in an embodiment of this application, as follows: Figure 3As shown, taking a system-on-a-chip (SoC) applied to an optical chip as an example, the electro-optic modulation system includes: at least one set of electro-optic modulation structures 201, each electro-optic modulation structure 201 acting as a polarizer based on an SPP (Special Power Probe), comprising two electro-optic modulation structures 201 as described above, symmetrically arranged along the second direction Y. Each electro-optic modulation structure 201 includes GSGSG (Ground-Signal-Ground-Signal-Ground, ground-signal-ground-signal-ground) electrodes. The electro-optic modulation system also includes a polarization beamsplitter 109, disposed on the input side of the set of electro-optic modulation structures 201, used to separate the input light into a transverse electric (TE) mode and a transverse magnetic (TM) mode, and output them to the two electro-optic modulation structures respectively; and a polarization beam combiner 110, disposed on the output side of the set of electro-optic modulation structures, used to combine the beams of light after electro-optic modulation by the set of electro-optic modulation structures before outputting them. Since the electro-optic modulator and optical polarizer in the electro-optic modulation structure 201 have the dual functions of electro-optic modulator and polarizer, the TM mode is separated into the upper optical path of the system and converted into the TE mode by the polarization rotator 111. Then it is electro-optically modulated by the SPP-based electro-optic modulation structure 201. After electro-optic modulation by the electro-optic modulation structure 201, it is still the TE mode and is finally transmitted to the polarization combiner 110 at the output end. The TE mode is separated into the lower optical path of the system and electro-optically modulated by the SPP-based electro-optic modulation structure 201. After electro-optic modulation by the electro-optic modulation structure 201, it is still the TE mode. Then it is converted into the TM mode by the polarization rotator 111 and is finally transmitted to the polarization combiner 110 at the output end. The upper and lower optical paths combine the TE mode and TM mode beams into one and output them. Because this electro-optic modulation system includes a polarization beamsplitter 109, a polarization beam combiner 110, an electro-optic modulation structure 201, and a polarization rotator 111, it can perform polarization beam splitting and combining, as well as beam splitting and combining of similarly polarized light based on the multimode interference (MMI) principle. The polarization rotator 111 and the electro-optic modulator and polarizer in the electro-optic modulation structure 201 are both SPP-based devices, possessing the dual functions of electro-optic modulator and polarizer. Therefore, no additional polarizer is required. Compared to traditional on-chip polarization multiplexing systems, the device area is nearly half that of traditional systems, significantly reducing the integration area of ​​individual devices and the overall size of the system. This greatly improves the system's integration without affecting electro-optic modulation, significantly reducing system size and optical path insertion loss, which is beneficial for on-chip integration and suitable for medium- and high-speed optical communication systems. Furthermore, the system's electro-optic modulator and polarizer include an intrinsic mode filtering structure, ensuring a sufficiently high polarization extinction ratio even without a polarizer.

[0036] According to several embodiments of the present invention, a medium is included between the two electro-optic modulation structures to block coupling crosstalk between the two electro-optic modulation structures symmetrically arranged along the second direction.

[0037] According to several embodiments of the present invention, the electro-optic modulation system further includes two polarization rotators for converting the transverse electric field mode and the transverse magnetic field mode to each other, wherein one polarization rotator is connected between the polarization beam splitter and the input end of an electro-optic modulation structure to convert the transverse magnetic field mode, and the other polarization rotator is connected between the output end of another electro-optic modulation structure and the polarization beam combiner to convert the transverse electric field mode.

[0038] According to several embodiments of the present invention, the first electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator respectively include: a GS electrode with impedance matching characteristics, a grating-type eigenmode reflection structure surrounded by the GS electrode, and an eigenmode reflection structure with a metal-dielectric connection located between the GS electrodes.

[0039] According to several embodiments of the present invention, the cladding layer of the first electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator is at least one of SiO2, Si3N4, and Al2O3.

[0040] According to several embodiments of the present invention, the eigenmode reflection structure further includes an eigenmode reflection structure connected by a metal-dielectric-metal link for filtering out eigenmodes within the plasma waveguides on the surfaces of the first electro-optic modulator and optical polarizer and the second electro-optic modulator and optical polarizer.

[0041] According to several embodiments of the present invention, the distance between the metal and the medium in the non-intrinsic mode reflective structure is 5 to 200 nanometers, the width of the medium is 10 to 300 nanometers, and the length of the metal-medium-metal is 0.1 to 9 micrometers.

[0042] This electro-optic modulation system comprises a polarization beamsplitter, a polarization beam combiner, an electro-optic modulator and polarizer, and a polarization rotator. The polarization beamsplitter and combiner can perform polarization beam splitting and combining, as well as splitting and combining beams of the same polarization based on the multimode interference (MMI) principle. The polarization rotator and the electro-optic modulator and polarizer are both SPP-based devices, possessing the dual functions of electro-optic modulator and polarizer. Therefore, no additional polarizer is required. Compared to traditional on-chip polarization multiplexing systems, the device area is nearly half that of traditional systems, significantly reducing the integration area of ​​individual devices and the overall size of the system. This greatly improves system integration without affecting electro-optic modulation, significantly reducing system size and optical path insertion loss, which is beneficial for on-chip integration and suitable for medium- and high-speed optical communication systems. Furthermore, the electro-optic modulator and polarizer include an intrinsic mode filtering structure, ensuring a sufficiently high polarization extinction ratio even without a polarizer.

[0043] A third aspect of the present invention provides a method for electro-optic modulation. Figure 4 The diagram shows a flowchart of an electro-optic modulation method provided by the present invention. Figure 4 As shown, the electro-optic modulation method provided by the present invention includes:

[0044] S1. The input light is separated into a transverse electric field mode and a transverse magnetic field mode by a polarization beam splitter;

[0045] S2. The transverse electric field mode and the transverse magnetic field mode are respectively fed into two symmetrically arranged electro-optic modulation structures in a set of electro-optic modulation structures for electro-optic modulation.

[0046] S3. The beam of light that has been electro-optically modulated by the two electro-optic modulation structures is input into the polarization beam combiner for beam combining and then output.

[0047] A fourth aspect of the present invention provides a computer device. Figure 5 The diagram shown is a structural schematic of a computer device provided in an embodiment of the present invention. Figure 5 As shown, an embodiment of the present invention provides a computer device including the following modules: at least one processor 021; and a memory 022, the memory 022 storing computer instructions 023 that can be executed on the processor 021, the computer instructions 023 implementing the steps of the method described above when executed by the processor 021.

[0048] The present invention also provides a computer-readable storage medium. Figure 6 The diagram shown is a structural schematic of a computer-readable storage medium provided in an embodiment of the present invention. Figure 6As shown, computer-readable storage medium 031 stores a computer program 032 that, when executed by a processor, performs the steps of the method described above.

[0049] Finally, it should be noted that those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The program for setting system parameters can be stored in a computer-readable storage medium. When executed, the program can include the processes of the embodiments of the above methods. The storage medium for the program can be a magnetic disk, optical disk, read-only memory (ROM), or random access memory (RAM), etc. The above computer program embodiments can achieve the same or similar effects as any of the corresponding foregoing method embodiments.

[0050] Furthermore, the method disclosed in the embodiments of the present invention can also be implemented as a computer program executed by a processor, which may be stored in a computer-readable storage medium. When the computer program is executed by the processor, it performs the functions defined in the method disclosed in the embodiments of the present invention.

[0051] Furthermore, the above-described method steps and system units can also be implemented using a controller and a computer-readable storage medium for storing a computer program that enables the controller to perform the functions of the above-described steps or units.

[0052] Those skilled in the art will also understand that the various exemplary logic blocks, modules, circuits, and algorithm steps described in conjunction with the disclosure herein can be implemented as electronic hardware, computer software, or a combination of both. To clearly illustrate this interchangeability between hardware and software, the functionality of various illustrative components, blocks, modules, circuits, and steps has been generally described. Whether this functionality is implemented as software or as hardware depends on the specific application and the design constraints imposed on the system as a whole. Those skilled in the art can implement the functionality in various ways for each specific application, but such implementation decisions should not be construed as departing from the scope of the embodiments disclosed herein.

[0053] In one or more exemplary designs, functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software, the functionality may be stored as one or more instructions or code on or transmitted via a computer-readable medium. Computer-readable media include computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one location to another. Storage media may be any available medium accessible to a general-purpose or special-purpose computer. By way of example, and not limitation, computer-readable media may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage devices, disk storage devices or other magnetic storage devices, or any other medium that may be used to carry or store the required program code in the form of instructions or data structures and is accessible to a general-purpose or special-purpose computer or a general-purpose or special-purpose processor. Furthermore, any connection may be appropriately referred to as computer-readable media. For example, if software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the aforementioned coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are all included in the definition of media. As used herein, disks and optical discs include compact discs (CDs), laser discs, optical discs, digital versatile discs (DVDs), floppy disks, and Blu-ray discs, where disks typically reproduce data magnetically, while optical discs reproduce data optically using lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0054] The above are exemplary embodiments disclosed in this invention. However, it should be noted that various changes and modifications can be made without departing from the scope of the embodiments of this invention as defined by the claims. The functions, steps, and / or actions of the methods according to the disclosed embodiments described herein do not need to be performed in any particular order. Furthermore, although the elements disclosed in the embodiments of this invention may be described or claimed individually, they may be understood as multiple unless explicitly limited to a singular number.

[0055] It should be understood that, as used herein, the singular form “a” is intended to include the plural form as well, unless the context clearly supports an exception. It should also be understood that, as used herein, “and / or” refers to any and all possible combinations of one or more of the associated listed items.

[0056] The embodiment numbers disclosed in the above embodiments of the present invention are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0057] Those skilled in the art will understand that all or part of the steps of the above embodiments can be implemented by hardware or by a program instructing related hardware. The program can be stored in a computer-readable storage medium, such as a read-only memory, a disk, or an optical disk.

[0058] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of the invention (including the claims) is limited to these examples. Within the framework of the invention, technical features of the above embodiments or different embodiments can be combined, and many other variations of different aspects of the invention exist, which are not provided in the details for the sake of brevity. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the invention should be included within the protection scope of the invention.

Claims

1. An electro-optic modulation structure, characterized in that, include: The first multimode interference coupler and the second multimode interference coupler are symmetrically arranged along the first direction and are used to split and combine light beams, respectively. A set of electro-optic modulators and polarizers, including: The first electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator are symmetrically arranged between the first multimode interference coupler and the second multimode interference coupler along the second direction and are coupled based on surface plasmon polaritons. They are used to electro-optically modulate the beam split from the first multimode interference coupler and output the electro-optically modulated beam split to the second multimode interference coupler for beam combining. An intrinsic mode reflection structure is used to connect the first electro-optic modulator and optical polarizer and the second electro-optic modulator and optical polarizer. The first electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator respectively include a GS electrode with impedance matching characteristics, a grating-type eigenmode reflection structure surrounded by the GS electrode, and an eigenmode reflection structure with metal-dielectric connection between the GS electrodes. The eigenmode reflection structure includes an eigenmode reflection structure connected by a metal-dielectric-metal link, for filtering out eigenmodes within the plasma waveguides on the surfaces of the first electro-optic modulator and optical polarizer and the second electro-optic modulator and optical polarizer.

2. The structure according to claim 1, characterized in that, The coating layer of the first electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator and the second electro-optic modulator is at least one of SiO2, Si3N4 and Al2O3.

3. The structure according to claim 1, characterized in that, The distance between the metal and the medium in the eigenmode reflective structure is 5-200 nanometers, the width of the medium is 10-300 nanometers, and the length of the metal-medium-metal relationship is 0.1-9 micrometers.

4. An electro-optic modulation system, characterized in that, include: At least one set of electro-optic modulation structures, including two electro-optic modulation structures as described in any one of claims 1 to 3, symmetrically arranged along a second direction; A polarization beam splitter is disposed on the input side of the set of electro-optic modulation structures to separate the input light into a transverse electric field mode and a transverse magnetic field mode and output them to the two electro-optic modulation structures respectively. A polarization beam combiner is disposed on the output side of the set of electro-optic modulation structures and is used to combine the split beams of light that have been electro-optically modulated by the set of electro-optic modulation structures before outputting them.

5. The system according to claim 4, characterized in that, The two electro-optic modulation structures include a medium for blocking coupling crosstalk between the two electro-optic modulation structures symmetrically arranged along the second direction.

6. The system according to claim 4, characterized in that, It also includes two polarization rotators for converting the transverse electric field mode and the transverse magnetic field mode to each other. One of the polarization rotators is connected between the polarization beamsplitter and the input of one of the electro-optic modulation structures to convert the transverse magnetic field mode, and the other polarization rotator is connected between the output of another electro-optic modulation structure and the polarization beam combiner to convert the transverse electric field mode.

7. A method for electro-optic modulation, characterized in that, include: The input light is separated into a transverse electric field mode and a transverse magnetic field mode by a polarization beam splitter. The transverse electric field mode and the transverse magnetic field mode are respectively fed into two symmetrically arranged electro-optic modulation structures in a set of electro-optic modulation structures as described in claim 4 for electro-optic modulation. The split beam of light, after being electro-optically modulated by the two electro-optic modulation structures, is input into the polarization beam combiner for beam combining and then output.

8. A computer device, characterized in that, include: At least one processor; as well as A memory storing computer instructions executable on the processor, wherein the memory executes the instructions to perform the method of claim 7.

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