A semiconductor device

Abstract

The embodiment of the application provides a semiconductor device, which comprises a first semiconductor layer; an electric field termination layer formed on the first semiconductor layer; an electric field transition layer formed on the electric field termination layer; a drift region formed on the electric field transition layer, a column region formed in the drift region; a second semiconductor layer formed above the drift region; the doping concentration of the electric field transition layer is less than the doping concentration of the electric field termination layer, the drift region and the electric field transition layer can respectively cause the accumulation of a few carriers by the effect of conductance modulation; the total charge Q of the electric field transition layer 总 The preset condition is met so that the semiconductor device is turned off, the electric field transition layer is completely depleted, the electric field is reduced in the electric field transition layer and reduced to 0 in the electric field termination layer, and the total charge Q of the electric field transition layer 总 The preset condition is met, which is less than or equal to k%*Ec / εs. The embodiment of the application solves the technical problem of large energy loss of the conventional SJ-bipolar semiconductor device.

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