An nmbt basic system unit with topological insulator phase transition features

Abstract

The technical field of a NMBT basic system unit with topological insulator phase transition characteristics The present invention relates to the multi-disciplinary field of electronic materials, and describes a composite molecular structure composed of different physical properties of manganese-based NdBaMnO3 (NM) and titanium-based BaNdTiO3 (BT), and NMBT particles and thin film structures composed of the same, a NMBT basic system unit, which has the technical and method of topological insulator phase transition characteristics under the action of an electric field, and the occurrence of the giant magnetoresistance effect, anomalous Hall effect and abnormal dielectric effect at room temperature.

Description

TECHNICAL FIELD

[0001] The present invention relates to the field of electronic materials science, and describes a composite molecular structure combined by different physical properties of manganese-based NdBaMnO3 (manganese-based NM) and titanium-based BaNdTiO3 (titanium-based BT), NMBT particle structure, thin film structure, and NMBT basic system unit structure. Under the action of an electric field, the NMBT basic system unit with topological insulator phase transition characteristics exhibits quantumized colossal magnetoresistance effect, anomalous Hall effect, and anomalous dielectric effect at room temperature. BACKGROUND

[0002] In the 1950s, humans discovered the colossal magnetoresistance (CMR) effect of manganese oxygen compounds. The intrinsic anti-ferromagnetic state of manganese-based NM has a "natural" spin "magnetic lock" structure, and under certain conditions, if the spin symmetry structure is broken, it can be converted from an anti-ferromagnetic state to a long-range ordered ferromagnetic state. Today, research around it has far exceeded the significance of the CMR effect itself. From the beginning of studying the CMR effect mechanism, many unique physical phenomena and laws have been discovered, involving strong correlation between external magnetic field and intrinsic magnetic field and carrier electron transport, resistance jump, JT distortion of the spatial form of the crystal field leading to phase transition between ferromagnetic and anti-ferromagnetic, adiabatic properties, and the like.

[0003] The discovery of quantum integer Hall effect in 1980, quantum fractional Hall effect in 1982, quantum anomalous Hall effect in 2013, and quantum spin Hall effect theory (2006), as well as topological insulator structure phase transition (TIPT) theory research (2016), have played an important role in promoting the study of rare earth manganite oxides.

[0004] Previously, the study of rare earth manganite oxides has been limited by harsh macro intervention conditions, such as extremely low temperature, strong external magnetic field, ultra-high pressure, and the like, which has limited further research and application.

[0005] According to the Hall mechanism theory, under the condition of no external magnetic field, if quantum anomalous Hall effect occurs, the special material needs to meet three conditions: 1. The special material with one-dimensional structure is in an intrinsic long-range ordered ferromagnetic state; 2. The intrinsic magnetic field direction of the special material is perpendicular to the conjugate charge transport direction under the two-dimensional electron gas state; 3. The edge of the high-insulation special material can form a carrier conductor. In fact, there are very few single molecules and molecular combination structures that can meet the above conditions at room temperature.

[0006] The present application describes a novel micro-intervention method instead of the traditional macro-intervention method, through the unique topological insulator phase transition (TIPT) mechanism of NMBT itself structure, using the titanium-based BT (BaNdTiO3) molecular dynamics principle in NMBT, under the action of electric field, through the intrinsic TOM (Ti-O-Mn) oxygen bridge structure, driving the target molecule manganese-based NM (NdBaMnO3) to occur distortion movement, which can make NM occur ferromagnetic phase transition, and AHE effect appears; NM can also occur antiferromagnetic phase transition, and CMR effect appears; and under the combined effect of CMR and AHE, ADE effect appears,...

[0007] The physical effects and methods described in the present application at room temperature can make the quantum application of rare earth manganite oxide system possible, including the use of phase transition characteristics to produce new semiconductor devices, magnetic low-loss conductive products, and high-efficiency physical energy storage systems, and the like.

[0008] In their patents (WO 2008 / 017047) and (CN1992366), respectively, Richard Wier et al. and Lv Huibin et al. respectively noticed the important relationship between manganese and titanium elements, and the heterojunction generated by the combination of manganese oxygen system molecules and some ferroelectric materials has magnetoresistance characteristics, but their patents do not clearly show the necessity of NMBT material structure and the important role played under the TIPT mechanism, including other contents described in the present application. SUMMARY

[0009] The present application describes a NMBT basic system unit prototype ( Figure 3 ), which comprises a tetragonal BT particle 2 contained in NMBT particle powder 1, a manganese-based NM molecule and a titanium-based BT molecule combined double perovskite composite NMBT layer 3, a NMBT thin film structure, i.e. polycrystalline thin film 5, mixed with PET adhesive resin 4, and an upper electrode 6, a lower electrode 7, a wire 8 and a power supply 9.

[0010] The NMBT particle structure is characterized in that it has a topological insulator phase transition (TIPT) mechanism. It includes the tetragonal BT particle which plays an insulating role inside, and the manganese-based NM layer which uses the surface edge of the BT particle as a carrier transport platform. At the same time, the intrinsic TOM linkage mechanism in NMBT molecule can make the manganese-based NM of topological insulator structure occur phase transition between antiferromagnetic and ferromagnetic, and quantum state superposition with physical significance.

[0011] When the external voltage increases, the distortion of the manganese-based NM can cause the spin structure of the antiferromagnetic state to break, i.e., the time reversal symmetry (TRS) is broken. The intrinsic magnetic field of the manganese-based NM order is perpendicular to the external current in the carrier channel, and under the action of the Lorentz force, the manganese-based NM realizes electron transport in the conductive channel at the edge of the BT particles. A good conductive state (10Ω or less) is obtained in the positive phase transition (PPT) long-range ordered ferromagnetic state, and a quantum anomalous Hall effect (AHE) is generated (such as Figure 5 b) in the

[0012] When the external voltage decreases, the manganese-based NM can cause the spin structure of the antiferromagnetic state to recover from distortion. That is, the time reversal symmetry is restored. A very high resistance change value (10 14 Ω) is obtained in the inverse phase transition (IPT) antiferromagnetic state, and a colossal magnetoresistance effect (CMR) occurs (such as Figure 5 a) in the

[0013] Through the combined application of CMR and AHE effects, an electronic dam (trap) effect can occur, a quantum anomalous dielectric effect (ADE) that can be much larger than the conventional dielectric constant can be obtained, and a cumulative effect of the Berry phase increment charge, and the like.

[0014] NMBT molecular structure

[0015] The intrinsic NdMnO3(NM) and BaTiO3(BT) molecules are both ABO3 perovskite structures, and are classified as antiferromagnetic and ferroelectric materials according to their different physical characteristics. NdBaMnO3 and BaNdTiO3 are their derivative oxides, respectively.

[0016] The important physical properties of the two systems are that the ferroelectric BT can cause the molecule to polarize and stretch under the action of an electric field, while the antiferromagnetic NM usually has no direct effect on the electric field.

[0017] The so-called NdBaMnO3 and BaNdTiO3 synthesis is to combine two different functional source molecules into a one-dimensional double-perovskite NMBT multi-ferrite combination molecule Figure 1 ). The synthesized NMBT is divided into titanium-based BT Figure 1-1 ) and manganese-based NM Figure 1-2 ), and still maintains the basic characteristics and functional properties of the source molecules.

[0018] The key point of this invention lies in the existence of a Ti-O-Mn (TOM) structure between the titanium-based BT and manganese-based NM molecular structures of NMBT. In the tetragonal phase, the titanium-based BT, utilizing its electrostatic properties, plays a crucial role in influencing the spatial changes of the crystal morphology of the manganese-based NM. Under the modulation of an external electric field, as the titanium-based BT moves along its central axis, the internal TOM structure also reacts, driving the manganese-based NM to move along the polarization direction of the BT, resulting in distortion or restoration. Figure 1-3 This is an important mechanism by which NMBT utilizes the electrostriction mechanism of titanium-based BT to induce a large resistance change in manganese-based NM.

[0019] The NMBT structure shows that, under the action of TOM, manganese-based Nd 1-x Ba x MnO3 through titanium-based Ba 1-y Nd y The changes in the spatial morphology of TiO3 (x≈0.25-0.37, y≈1-x) can produce JT distortion, or restore the distortion, resulting in a ferromagnetic phase, an antiferromagnetic phase, or a superposition and coexistence of the two phases.

[0020] Under the action of TOM, NMBT can not only make typical JT distortion movement along the central axis of BT, but also make cosθ tilt displacement along the direction of electric field. Within a sufficient range, this tilt can still make it switch between ferromagnetic and antiferromagnetic states.

[0021] In addition, the hysteresis characteristics of titanium-based BTs and the magnetic hysteresis characteristics of manganese-based NMs also affect the physical properties of NMBTs.

[0022] Figure 1 This is a schematic diagram of the NMBT structure mechanism. Under the action of electric field E(4), titanium-based BT(1) undergoes electrostriction and moves through Ti-O-Mn(3), which in turn drives manganese-based NM(2) to move.

[0023] This invention relates to NMBT structures that, in addition to Mn, Ba, and O, also include Nd and Ba ions with structural interactions in manganese-based NdBaMnO3 and titanium-based BaNdTiO3.

[0024] Furthermore, these ions can also be doped and replaced to further improve their physical properties, including at least one of the following ions: La, Ce, Pr, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ca, Sr, Pd, Cs, Pb, Zr, Y, etc.

[0025] The derivative compounds doped and modified by manganese base at least contain one of the following: LaSrMnO3, LaBaMnO3, LaPbMnO3, LaCaMnO3, LaNdCaMnO3, NdBaMnO3, NdPbMnO3, PrCaMnO3, etc.

[0026] The derivative compounds doped and modified by titanium base at least contain one of the following: BaZrTiO3, BaNdYZrTiO3, PbNdTiO3, PbNdZrTiO3, etc.

[0027] NMBT particles, thin films and system units

[0028] In order to meet the requirements of NMBT structure, the organic liquid phase synthesis of molecular self-coordination method is used in the experiment to carry out polycondensation reaction on the lactic acid chelated pre-ligand of Mn ion and Ti ion each having at least two or more hydroxyl groups.

[0029] For example: n[CH3CH(O-)COONH4]2Ti(OH)2 + nMn[CH3CH(OH)COO]2, under the catalysis of acid at 80-85℃, -Ti-C with O ion and carbonyl C=O is obtained ＝O -O-Mn-long chain structure, i.e. TCOM ligand. Figure 2 The test result of the organic precursor single crystal with Ti and Mn ions. The long chain structure corresponding to the 1:1 matching of Ti ion and Mn ion. The test equipment is RIGAKU CCD SATURN 724+.

[0030] According to the proportion of each element of NMBT, the precursor precipitate mixed by TCOM ligand, Ba(NO3)2 and Nd(NO3)2 is mixed with tetragonal BT particles, high-temperature sintering is carried out at 800-1100℃, CO gas containing carbonyl is released, and NMBT green particles with NMBT film layer wrapped on the surface of BT particles at about 0.5-10nm are obtained. Figure 4 In the formula, a and b are respectively NMBT powder and NMBT particle picture under electron microscope.

[0031] These particles are mixed with a small amount of glycerol slurry containing 30% PET organic insulating resin to make NMBT thin film and electrode by screen printing process, and combined as NMBT basic system unit prototype. Figure 3 It is the schematic diagram of NMBT system unit prototype. It includes NMBT particle powder 1 composed of tetragonal BT particles 2 with diameter of about 1μm and NMBT layer 3 wrapped on the surface of the particles with thickness of about 10-30nm; NMBT particle powder 1 and PET adhesive resin 4 form polycrystalline thin film 5 with thickness of 30-150μm, and upper electrode 6, lower electrode 7, lead wire 8 and power supply 9.

[0032] According to the current international semiconductor 2nm process production level, independent NMBT molecules ( Figure 1 ), or independent NMBT particle powder 1 are added with electrodes 6, lower electrodes 7, wires 8 and power supplies 9, respectively, under the support of this process, an ultra-micro independent NMBT system unit can be made. Therefore, the resin that plays the bonding function between NMBT particles and NMBT film is no longer needed.

[0033] TIPT mechanism and physical characteristics

[0034] The NMBT physical characteristics described below are only to prove the important association of these characteristics with the NMBT system unit.

[0035] In Figure 3 In the NMBT system basic unit prototype described, the NMBT molecule structure layer has BT as the "insulating core" and the manganese-based NM layer as the carrier transport platform, which meets the condition of one-way flow of electrons at the edge layer of NMBT particles. At the same time, the intrinsic TOM linkage of NMBT can cause NM to undergo antiferromagnetic and ferromagnetic phase transition under the action of an electric field, which is the basic characteristics and mechanism of NMBT topological insulator phase transition (TIPT). Figure 5 Schematic diagram of NMBT topological insulator phase transition mechanism (see the interpolation diagram). Figure 5 a in the figure represents the voltage at point c, which is the antiferromagnetic phase state of NMBT topological insulator, and the manganese-based NM retains the intrinsic time reversal symmetry, the electron channel is closed, and the magnetoresistance is high. Figure 5 b in the figure represents the voltage at point b, which is the ferromagnetic phase state of NMBT topological insulator, and the time reversal symmetry of manganese-based NM is broken, the intrinsic magnetic field and the AHE effect of external current conjugation appear, the electron channel is open, and the magnetoresistance is low.

[0036] The TIPT mechanism of NMBT is embodied through the phase transition of manganese-based NM caused by voltage. It includes first phase transition (FPT) Figure 6 ), positive phase transition (PPT), inverse phase transition (IPT), and discrete phase transition (DPT). The resistance values of NMBT modulated by voltage at 0, a, b, and c points respectively reflect the typical basic phase transition characteristics. Figure 7 FPT, PPT, and IPT phase transition characteristic diagram.

[0037] a, first phase transition FPT

[0038] Initial phase transition FPT, when the voltage is unidirectionally modulated from 0 to a point, the NMBT is under the influence of the titanium-based BT electro elongation, the manganese-based NM resistance value linearly rises, gradually from the discrete ferromagnetic state to the ordered ferromagnetic state. When the voltage is through the inflection point a, while keeping the BT insulating state, the NMBT particles form the TIPT structure. The titanium-based BT can drive the manganese-based NM to move through the TOM according to the PPT-IPT phase transition rule, so that the resistance obviously jumps. Figure 6 FPT phase transition resistance curve. Before the inflection point a, the resistance linearly rises. After the inflection point a, the manganese-based NM is distorted under the action of the TOM, the magnetic field is enhanced, the resistance decreases and jumps, and the TIPT mechanism is formed.

[0039] b, positive phase transition PPT

[0040] The positive phase transition PPT refers to the phenomenon that the resistance decreases at a certain voltage point x (b>x>a) when the voltage rises. It shows that under the TIPT structure, the NMBT causes the manganese-based NM to change from the IPT (high-resistance) antiferromagnetic state to the (low-resistance) ferromagnetic state phase transition through the titanium-based BT electro elongation effect and the TOM driving when the voltage rises.

[0041] For example, at the c point of the manganese-based NM antiferromagnetic state, the voltage is modulated to the b point of the positive phase transition PPT, and after passing through the a point, the manganese-based NM is distorted, so that it changes to the ordered ferromagnetic state phase transition. With the increase of the manganese-based magnetic field strength, the magnetoresistance decreases, and the manganese-based NM at the b point is in a low-resistance state. In the PPT phase transition, the BT keeps a high-resistance insulating state.

[0042] The PPT effect under the TIPT mechanism reflects a strong correlation physical state of the magnetic field and the carrier electron concentration, which is a basic mechanism for the superconducting state of the metal compound at room temperature. The quantum anomalous Hall effect of the special material can produce high-carrier-density electron ordered flow under a strong intrinsic magnetic field.

[0043] c, inverse phase transition IPT

[0044] The inverse phase transition IPT refers to the phenomenon that the resistance increases after a certain voltage point x (b>x>a) is switched to the c point when the voltage decreases. It shows that the manganese-based NM changes from the (low-resistance) ordered ferromagnetic state to the (high-resistance) antiferromagnetic state phase transition through the titanium-based BT electro contraction effect and the TOM pulling.

[0045] For example, at the b point of the NM resistance which is very low, when the voltage is switched from the b point to the c point, that is, the b point on the IPT curve, it can be observed that the resistance instantaneously increases greatly, the NM resistance value increases by 10 8 Ω or more, becoming the CMR peak value of the manganese-based NM.

[0046] In the IPT phase transition, the manganese-based NM returns to the antiferromagnetic state, the c point is lower than the potential of the a point, and the BT remains in the high resistance state due to the existence of the CMR high resistance insulating state and the maintenance potential, and the TIPT mechanism does not change.

[0047] d, discrete phase transition DPT

[0048] The discrete phase transition DPT refers to the voltage being zero and the NM being in a discrete state without an external electric field. Due to the loss of the basic maintenance voltage of the BT, the self-domain changes disorderly due to stress, causing self-leakage or damage to the TIPT structure. The change of the titanium-based BT is transmitted to the manganese-based NM through the TOM, causing the NM to change from the original antiferromagnetic state or the ordered ferromagnetic state to a low-resistance discrete disordered ferromagnetic state. Due to the relaxation of the NM-BT crystal, a time delay characteristic of resistance continues to decrease will occur.

[0049] In addition, the NM-BT phase transition will also cause the following physical changes.

[0050] Superposition state

[0051] According to the characteristics of the NM-BT, the intrinsic magnetic field strength and the carrier perpendicular to it exist a conjugated superposition change, which determines the change of the magnetoresistance. If the maximum relative magnetic resistance of the manganese-based NM in the antiferromagnetic state of the IPT phase transition is set to 1, and the minimum relative magnetic resistance of the manganese-based NM in the ordered ferromagnetic state of the PPT phase transition is set to 0, any change of the magnetic resistance in this interval is based on the electrostriction of the titanium-based BT, which leads to the distortion of the manganese-based NM through the TOM, causing the superposition of the interaction between the two quantum states of the intrinsic magnetic field and the carrier. Such a quantum superposition state provides a new scheme for quantum computing.

[0052] Phase transition energy

[0053] In the phase transition conversion of the NM between the ferromagnetic state and the antiferromagnetic state, the FPT and the PPT phase transition generate and accumulate polarization potential energy, while the IPT phase transition releases the polarization potential energy. The energy of each phase transition is very different. For example, the energy required for the PPT from the c point to the b point is 1000V, the FPT from the 0 point to the b point only needs 500V, and the voltage energy required for the IPT (from the b point to the c point) is only 0.76V.

[0054] The polarization potential accumulation and release of the titanium-based BT electrostriction characteristics have an important influence on the resistance change caused by the manganese-based NM phase transition. In the PPT phase transition, the electric field has an effect on the titanium-based BT electrostriction, and the NMBT generates and accumulates the corresponding polarization potential energy. The higher the voltage, the greater the polarization potential energy, and the lower the PPT resistance. In the IPT phase transition, the electric field has an effect on the titanium-based BT electrostriction, and the NMBT releases different polarization potential energies from the point potential energy to the c-point potential energy, and obtains different resistance values of the manganese-based NM, thereby forming the IPT curve which is completely different from the PPT curve. The greater the one-time release of the polarization potential energy, the higher the magnetoresistance value.

[0055] If the NMBT occurs the PPT phase transition again after the IPT, at the b-point, the conversion energy required for the ordered lattice inversion is much greater than that from the discrete ferromagnetic state to the ordered ferromagnetic state.

[0056] In addition, the FPT, PPT and IPT phase transition may cause the voltage to be zero instantaneously, and the time period may cause different degrees of DPT effect, thereby affecting the resistance, current and other physical values after the phase transition.

[0057] Resistance jump phenomenon

[0058] In many previous studies on rare earth manganite oxides, the resistance jump phenomenon related to the Hall mechanism has been described.

[0059] In the NMBT system test, the nonlinear jump phenomenon of the NM resistance can be randomly observed in the rising or falling process of the right curve of the CMR at room temperature. Figure 8 The resistance jump phenomenon of the NMBT resistance under the condition of constant voltage. The fixed voltage V PPT After the resistance is adjusted from the c-point 0.76V to 650V, the resistance fluctuates with time. Figure 9 The resistance jump phenomenon of the NMBT resistance under the condition of constant voltage. The fixed voltage V IPT After the resistance is adjusted from 650V to the c-point 0.76V, the resistance fluctuates greatly with time. Measurement equipment: SMART SENSOR AR907+, KEITHLEY 6517B.

[0060] The resistance jump phenomenon of the NMBT resistance is mainly divided into the resistance jump phenomenon in the PPT and IPT phase transition modes. In the PPT mode, the NM is affected by the abnormal Hall effect (AHE) factor; in the IPT mode, the NM is affected by the lattice change factor after the crystal field returns from the ordered ferromagnetic state to the antiferromagnetic state.

[0061] In addition, the changes of NM magnetic field and current with time will produce different degrees of electro-magnetic or magnetic-electric induction. For example, when the magnetic field of PPT phase transition increases at point b, the induced current produces a reverse magnetic field to hinder the decrease of AHE magnetoresistance, and when the magnetic field of IPT phase transition decreases at point c, the induced current produces a magnetic field to hinder the increase of CMR magnetoresistance. These changes, especially the rapid changes of magnetic field and current, will cause large fluctuations of resistance.

[0062] The electric field of PPT phase transition can cause lattice distortion of manganese-based NM, i.e. time reversal symmetry (TRS) is broken, and an intrinsic ordered ferromagnetic state magnetic field and its perpendicular direction charge carrier conjugate AHE change are generated. In the Mn 3+ -O 2- -Mn 4+ -O 2- -Mn 3+ In the conduction channel of (Mn3O2), the degenerate energy level (DEL) between the energy levels of electrons and adjacent ion orbits, and the adiabatic exchange between different energy levels, also produce resistance jump phenomenon. Figure 8 .

[0063] When the IPT phase transition occurs, the voltage moves from point b to point c, and the NM lattice undergoes a transient giant change. Exit degeneracy will lead to a sharp increase in NM resistance, and a barrier electron retention effect (discussed in the next section) is generated. These reasons make the NM produce a giant resistance jump phenomenon from the ordered ferromagnetic state to the antiferromagnetic state. Figure 9 )

[0064] Due to the intrinsic electron transport adiabatic property of NM belonging to rare earth manganese oxide, the electron flow in the Mn3O2 channel does not produce heat loss, which is an important difference between NM magnetoresistance and conventional resistance in the conduction mechanism.

[0065] Electronic barrier and abnormal dielectric phenomenon

[0066] When the NMBT rapidly undergoes IPT phase transition from point b to point c, a clear electronic reflow phenomenon can be observed, accompanied by a sharp jump change in resistance, and the giant magnetoresistance value can be as high as 10 14 Ω or more in a short time.

[0067] When the manganese-based NM is in the AHE state, the voltage makes it reverse to produce the CMR state, which can cause the electronic barrier phenomenon. The measurement shows that the positive and negative values of the magnetoresistance are alternately exchanged, the oscillation decays, and finally the process of the positive giant magnetoresistance changes.

[0068] Manganese-based NM occurs CMR phase transition, the giant resistance of which traps part of the electrons that normally flow in the original AHE unidirectional flow, and accumulates new electronic increments at the dielectric end of the system electrode. This dielectric phenomenon is the anomalous dielectric effect (ADE). The ADE phenomenon is a unique physical phenomenon that occurs when the NMBT is in the positive and reverse phase transition period, indicating that when the NM crystal phase changes from a highly ordered ferromagnetic state to an antiferromagnetic phase state, the CMR characteristics are used to lock the AHE effect in the part of the electrons flowing in the carrier channel.

[0069] The electronic damming phenomenon has a strong secondary impact on the antiferromagnetic spatial crystal field structure of NMBT at point c. The unidirectional flow of electrons generated by the AHE effect is suddenly blocked by the damming in the carrier conduction channel, and the resistance value change can be more than 100TΩ. The damming electrons temporarily residing in the conduction channel (Mn3O2) quantum well increase the number of Mn 4+ The sudden increase in the number of ions will cause the NM antiferromagnetic state to strengthen, and a higher giant magnetoresistance will appear.

[0070] The ADE effect shows that NMBT in the TIPT structure can exhibit AHE conduction characteristics in the ferromagnetic ordered state, and can exhibit capacitance characteristics through the generation of CMR giant resistance in the antiferromagnetic state. In the capacitance characteristic, the anomalous dielectric characteristic is also increased.

[0071] As can be seen, the strength of ADE is strongly related to the size of CMR resistance and the density of AHE charge. The greater the CMR resistance, the higher the AHE charge density, and the stronger the ADE effect.

[0072] ADE increments and NM saturation in the TIPT structure, when NMBT is in the PPT and IPT alternating phase transition period, the number of temporarily resident electrons generated by the ADE effect of each period increases, and the Berry phase changes, which can form ADE dynamic cumulative increments.

[0073] The number of holes n in the temporary hole formed in the NM's own dielectric semiconductor channel determines the number of damming electrons that can be accommodated in the effective Mn3O2 carrier channel. If the resident potential of the NM damming electrons stagnates, it indicates that under a certain intrinsic magnetic field strength, the resident electrons in the carrier channel are close to saturation.

[0074] In a low-frequency half-wave rectifier circuit, NM periodically changes between conduction and capacitance characteristics, constantly generates ADE effects, and can accumulate damming electrons and increase the potential of damming charges. When the external electric field is canceled, the ADE dielectric value of the resident electrons in the dielectric can generate a reverse resident potential corresponding to it at the single-ended electrode.

[0075] Example 1, under low frequency half-wave rectified (220V, 50Hz) voltage, NMBT system unit sample caused by charge potential accumulation increase under room temperature ADE effect. After the sample (about 100μm thick) canceled the external voltage, itself generated 1.47V resident potential. Example 2, under low frequency half-wave rectified (2000V, 50Hz) voltage, NMBT sample caused by charge potential accumulation increase under room temperature ADE effect. After the sample (about 1mm thick) was taken out from 80℃ oven (about 10s) and canceled the external voltage, itself generated 284.4V resident potential.

[0076] Charge imbalance

[0077] ADE is a physical phenomenon that occurs under the joint action of CMR and AHE, which causes the number imbalance of the charges at both electrode ends under the capacitance characteristics, that is, the positive resident charge is generated at one end of the electrode in the current direction, while the equal amount of reverse charge cannot be formed at the other end of the electrode. This is an important difference between NMBT and conventional capacitors in principle and phenomenon. Figure 10

[0078] Figure 10 Schematic diagram of charge imbalance caused by ADE effect. a is the charge balance characteristic of conventional ceramic BT capacitor dielectric; b is the V PPT Under the voltage, NMBT utilizes the manganese-based NM ferromagnetic phase transition state (AHE effect) to generate electron conduction characteristics in the BT edge Mn3O2 channel; c is the V IPT Under the voltage, NMBT utilizes the manganese-based NM antiferromagnetic phase transition state (CMR effect) to close the BT edge Mn3O2 channel, and part of the electron of the AHE effect is trapped in the channel hole, and charge imbalance occurs at both ends of the electrode.

[0079] One of the methods to solve the problem of charge imbalance is to use a pair of NMBT systems with the same structure and characteristics, and to modify them. By using the crystal structure inversion symmetry under the electric field of NMBT, a pair of capacitors C + , C - state. At this time, the dielectric index of NMBT includes not only the conventional BT dielectric value, but also the abnormal dielectric value generated by a pair of NMBT systems, that is, the abnormal dielectric value generated by the regular charge accumulation according to the Berry number and the effective carrier concentration. Figure 11 Schematic diagram of ADE charge balance system composed of a pair of NMBT systems. Under low frequency (such as 50Hz) half-wave rectified electric field, the system undergoes phase transition switching between ferromagnetic and antiferromagnetic states, which causes C + , C - to trigger ADE effect and generate quasi-equipotential formed by the cumulative charges in opposite directions. ​

[0080] Mechanism and function association

[0081] Since NMBT uses voltage to regulate NM distortion, resulting in magnetic field changes to produce resistance, current changes. It is different from the usual Ohm's law application: based on the TIPT structure under the NM quantum superposition state, the resistance is not usually a fixed constant, it changes with the NM intrinsic magnetic field change caused by the complex function argument voltage V, so that the dependent variable resistance R and current I also change linkage(f-1). Under the action of phase transition voltage VPPT, VIPT, the resistance, current value changes greatly(f-2)(f-3).

[0082] R=f(I)=f[g(V)](f-1)

[0083] When the voltage PPT acts on point b, the Rb value is minimum, the current Imax is maximum, and the AHE effect appears, as follows.

[0084] I max=VPPT-b / Rb(f-2)

[0085] When the voltage IPT acts on point c, the Rmax value is maximum, the current Ic is minimum, and the CMR effect appears, as follows.

[0086] Rmax=VIPT-c / Ic(f-3)

[0087] In terms of dielectric properties, the ADEε effect produced by the joint action of CMR and AHE is dynamically changing, as follows.

[0088] ADEε=g(f,t,VIPT,N,T,B)(f-4)

[0089] Where: f is the Berry period frequency, t is the time, VIPT is the voltage (a potential < VIPT≤VPPT), N is the effective carrier concentration, T is the absolute temperature, and B is the magnetic field strength.

[0090] If N, T, and B are considered as relatively fixed values, use μNMBT to represent. The formula can be simplified as:

[0091] ADEε=μNMBTg(f,t,VIPT)(f-5)

[0092] Where: c potential < VIPT≤VPPT.

[0093] For the dielectric value calculation of the flat plate capacitor, as follows:

[0094] C'=ADEεS / d+1 / 2εbtS / d(f-6)

[0095] Where ADEε is the abnormal dielectric value, εbt is the relative dielectric constant of BT, S is the surface area, and d is the distance between the plates.

[0096] If the dielectric constant εbt is ignored, it can be simplified as:

[0097] C ADE = ADE εs / d (f-7)

[0098] The NMBT blocking potential is related to the amount of electricity and the capacitance, and the expression is (f-10).

[0099] U NMBT = ∫ s ∫ d U·ndα = ∑Q ADE / C ADE ,

[0100] Where: U NMBT : NMBT blocking potential, c ≤ U NMBT ≤ a; ∫ s ∫ d u·ndα: integral form of the vector electric field with S plane and d thickness; ∑Q ADE : ADE blocking electron accumulation total amount; C ADE : quantum abnormal dielectric constant.

[0101] Manufacturing process

[0102] The manufacturing of NMBT particles may be greatly limited by the actual operator's technical level, such as: particle size, particle distribution width, thin film coating process level, insulating filler characteristics, technical process level difference, etc., but it needs to meet the basic conditions of NMBT described in this patent, as well as the green environmental protection requirements of the production process.

[0103] Powder

[0104] At least one complex molecular liquid synthesis method is used in the synthesis of organic precursors, in which Mn and Ti ions are chelated with 2-dentate chelate ligands with at least two hydroxyl groups; these metal ions can also be chelated with other organic acids with more than two hydroxyl groups, such as tartaric acid, malic acid, etc.

[0105] In the synthesis of NMBT organic precursors, Mn and Ti precursors with 2-dentate chelate ligands are subjected to polycondensation reaction to form Ti-C ＝0 -O-Mn ion long chain structure, this Ti and Mn ion 1:1 link conjugated organic precursor, in the subsequent co-precipitation and post-processing process, finally forms NMBT particle powder material with intrinsic Ti-O-Mn (TOM) structure.

[0106] In the process of NMBT production, the two functional molecules are not directly combined into NMBT structure, but a precursor containing Ti, Mn, Ba, Nd ions is first synthesized, and then the precursor containing Ti, Mn, Ba, Nd ions is mixed with BT particles of tetragonal phase according to the proportion of NMBT, and sintered in a high temperature furnace of 800-1100°C to release gas containing N, C, O, OH and other ionic elements, to produce green ceramic particle powder with double perovskite structure of NMBT layer wrapped on the surface of BT.

[0107] Sometimes, in order to improve the performance of NMBT particle powder, such as semiconductor and waterproof performance, NMBT powder can be mixed with some materials, and after process technology treatment, re-mixing and coating can be carried out on NMBT composite molecular particles, such as polyester plastic, polyimide, and their derivatives, etc., with a coating thickness of 1-10nm.

[0108] The size of NMBT particles is between 3nm and 2μm, which can be adjusted according to different application requirements and process technology level.

[0109] Thin film

[0110] These NMBT particle powders are mixed with a small amount of glycerol resin containing 30% PET to form a slurry, and through screen printing and drying process, polycrystalline NMBT thin film can be made on the backing plate.

[0111] In the process of thin film production, a small amount of adhesive material with insulating properties is needed. These materials usually have low dielectric constant, and their insulating properties are usually greater than 10 6 -10 19 Ω.m, such as polyethylene terephthalate (PET) and the like.

[0112] NMBT powder is mixed with glycerol resin containing 30% PET (1%-30% by volume ratio), and the slurry is uniformly stirred using mechanical and ultrasonic stirring technology. The slurry is uniformly coated on the release backing material under inert gas protection, and then placed in a drying oven. The drying temperature should not exceed the heat resistance temperature of the insulating material, and the drying time is 10-30 minutes. After isostatic pressing, NMBT thin film with a thickness of 5-150μm is produced.

[0113] During the coating process, resins that can promote fluidity, such as ethylene glycol, can be added to the slurry. These flow agents do not chemically react with the filler and NMBT, and are volatilized in subsequent process treatment.

[0114] Stirring and vibration tools used during slurry mixing, as well as containers for holding the slurry, are made of anti-stick materials such as polytetrafluoroethylene.

[0115] In the process of thin film coating, there may be gaps and bubbles. By using isostatic pressing and other methods, the pore bubbles can be effectively reduced. If the size distribution of the powder is narrowed and the size is appropriate, the anti-breakdown strength can also be improved.

[0116] System unit

[0117] After adding conductive electrodes to both ends of the NMBT thin film, it can be made into an NMBT basic system unit. The electrode material includes at least one of the following: Au, Ag, Cu, Ni, Al, Zn and other conductive metals, as well as metal alloys and conductive compounds, with a thickness of 0.1-20 μm.

[0118] Similarly, using the plane silk screen printing technology, the electrode paste is applied to the NMBT thin film under inert gas protection, and then placed in a drying oven. The drying temperature is determined according to the requirements of the electrode paste, and the drying time is 10-30 minutes. The electrode with a thickness of 1-2 μm is made on the NMBT thin film. On the other side of the NMBT thin film, another electrode with a thickness of 1-2 μm can be made by the same method.

[0119] The dielectric film and internal electrode can be integrated by referring to the relatively mature MLCC process, which is relatively easy to implement and has relatively low cost, which is conducive to popularization and application.

[0120] To solve the charge imbalance caused by ADE effect, at least two NMBT system prototypes C1 and C2 are combined in series, the electrodes between C1 and C2 are connected to ground, and the other positive and negative electrodes of C1 and C2 are connected to E and -E respectively. (Electric) source, or multiple groups of NMBT system prototypes can be connected in parallel to form C'1 group and C'2 group, wherein the ground electrodes of C'1 group and C'2 group are connected in common, the positive electrodes of C'1 group are connected in common, and the negative electrodes of C'2 group are connected in common.

[0121] Based on the combination structure of NMBT system prototypes C1 and C2, C1 and C2, or C'1 group and C'2 group can be embedded into the thin film similar to MLCC in a circuit connection mode.

[0122] For C'1 group and C'2 group, the number of NMBT prototype systems in C'1 group and C'2 group can be increased or decreased to make U' and -U' dielectric parameters more matched.

[0123] Because the initial crystal cell in the manufactured NMBT thin film is non-ordered arrangement, it needs to be treated by maturation process to reduce the stress negative effect caused by domain and magnetic domain during distortion and recovery of NMBT, so as to make the physical performance more stable. The method is to use high-temperature-resistant wiring tools to connect external power supply to both ends of the NMBT electrode, change the polarity of the electric field every 30-60 minutes, determine the voltage size according to the specific application requirements, and change the temperature between 20-85℃, more than 2 hours.

[0124] Under the action of voltage, the key physical values of FPT, PPT, IPT and DPT phase transition are measured and determined.

[0125] NMBT system application

[0126] According to the CMR mechanism of NMBT described in this patent, the manganese-based NM has a quantum characteristic magnetoresistance switching mechanism, which uses the PPT phase transition to make the magnetoresistance in the on state, and the IPT phase transition to make the magnetoresistance in the off state, and their quantum superposition states can provide hardware support for various chips including quantum computers.

[0127] According to the AHE mechanism of NMBT described in this patent, the physical characteristics of manganese-based NM under the AHE mechanism and the Planck constant are strongly related to the intrinsic magnetic field strength and carrier density of NM caused by external voltage. By controlling the quantum superposition state of the magnetoresistance to the limit, NMBT material can become a conductive functional material with adiabatic and magnetic superconducting characteristics.

[0128] According to the common action of the CMR and AHE mechanisms of NMBT described in this patent, the ADE effect with high dielectric value formed by the dammed electrons based on the physical layer can be generated. According to the Berry phase transition increment rule, an electronic energy storage system that meets various purposes can be made.

[0129] The NMBT mechanism described in this patent can be combined with other technologies and applied in many specific fields. For example, the fluctuating power characteristics of wind power, photovoltaic, water conservancy, and thermal power generation can be efficiently, quickly, and safely stored in the NMBT energy storage system; the quantum anomalous dielectric effect can be used to charge and discharge new energy batteries efficiently and quickly; the colossal magnetoresistance change can be used to manufacture high-sensitivity, low-noise Hall drive and sensor devices, and information storage units; the quantum superposition state can be used to develop quantum computing devices; and the low-loss characteristics can be used to manufacture low-loss conductors, low-loss transformers, and the like.

[0130] The implementation method related to this patent is described in the examples.

[0131] The foregoing summary contains essential, simplified, general and possibly omitted details. Therefore, these contents are only brief descriptions. The disclosed contents and methods, as apparent technical principles and knowledge, can be implemented or cited by modification and variation, which may deviate from the invention and its extensions. The features and advantages of the invention are defined in the claims, and are described in the detailed description below, which includes non-limiting contents. BRIEF DESCRIPTION OF DRAWINGS

[0132] The present invention can be better understood through the following description and accompanying drawings, which include: figures, texts and symbols indicating the structure, properties and functions.

[0133] Figure 1 A schematic diagram of the NMBT structure provided by this invention;

[0134] Figure 2 The single-crystal test image of the Ti and Mn ion organic precursor provided by this invention;

[0135] Figure 3 This is a schematic diagram of the basic system unit structure of NMBT provided by the present invention;

[0136] Figure 4 A diagram of calcined NMBT composite particles provided by the present invention; wherein, Figure 4 In the diagram, 'a' represents the particle size distribution of the powder after sintering. Figure 4 In the image, b is a particle image of the sintered powder under an electron microscope;

[0137] Figure 5 The present invention provides a two-phase magnetic order alternation diagram formed on the surface of an NM topological insulator under an electric field; wherein... Figure 5 In the diagram, 'a' represents the two-phase magnetic order alternation diagram when the antiferromagnetic conductive channel is closed. Figure 5 In the diagram, b represents the alternating phase magnetic order when the conductive channel is open in the ferromagnetic state.

[0138] Figure 6 The FPT phase change resistance curve provided by this invention;

[0139] Figure 7 Resistance characteristic diagrams of FPT, PPT, and IPT phase transitions under an electric field provided by the present invention;

[0140] Figure 8 V provided by the present invention PPT Graph of resistance change when voltage is constant;

[0141] Figure 9 V provided by the present invention IPT Graph of resistance change when voltage is constant;

[0142] Figure 10 The pseudocapacitor formed by the combination of PPT and IPT phase transitions provided by this invention;

[0143] Figure 11 A circuit diagram of a charge balance system composed of a pair of NMBT pseudocapacitors provided for this invention;

[0144] Explanation of reference numerals in the attached figures:

[0145] in, Figure 1 The attached figures are labeled as follows:

[0146] 1. Titanium-based BT; 2. Manganese-based NM; 3. Ti-O-Mn; 4. Electric field E;

[0147] Figure 3 wherein the reference signs are as follows:

[0148] 1: NMBT particle powder; 2: tetragonal phase BT particle; 3: NMBT layer; 4: PET adhesive resin; 5: polycrystalline thin film; 6: upper electrode; 7: lower electrode; 8: lead wire; 9: power source. DETAILED DESCRIPTION

[0149] This embodiment introduces an implementation method for preparing NMBT powder.

[0150] The following examples describe the present application, but the present application is not limited by the following examples.

[0151] The following detailed description, including the description of one or more devices and / or processes. These descriptions are intended to deepen the understanding of the claims.

[0152] The present patent currently describes the process and technology, which can be utilized for (existing) many different types of process technology, as it is easily understood by those skilled in the art.

[0153] The basic steps are as follows:

[0154] 1. According to the requirements of NMBT structure, add organic chelating ligand with bidentate chelation, so that Mn and Ti ions form the following organic coordination precursor,

[0155] Mn +2 + 2CH3CH(OH)COOH-(NO3)- / H2O→Mn[CH3CH(OH)COO]2 + 2H +

[0156] [CH3CH(OH)COO]2TiO+2NH4OH-H2O→[CH3CH(O - )COONH4]2Ti(OH)2+H2O

[0157] The two ionic chelates are subjected to polycondensation reaction:

[0158] nMn[CH3CH(OH)COO]2 + n[CH3CH(O - )COONH4]2Ti(OH)2-H2O / HCl / 90℃→Σ0-Ti Δ1 -C ＝O -O-Mn Δ2 -O-C ＝O -+nH2O

[0159] n: 1, 2, 3,... n,

[0160] Δ1: The portion of the Ti ion chelate that does not participate in the polycondensation reaction linkage.

[0161] Δ2: The portion of the Mn ion chelate that does not participate in the polycondensation reaction linkage.

[0162] After condensation coordination, the Mn functional ligand and the Ti functional ligand are linked to form a structure with -Ti-C. ＝O - O-Mn-OC ＝O -Ti-( Figure 2 Organic precursors with long-chain structures.

[0163] The aforementioned metal chelate raw materials before polycondensation are also available on the market, such as tetraisopropyl titanate and dihydroxydilactate titanium.

[0164] 2. For other metal ions that may be present in the NMBT structure, such as Ba, Nd, Zr, etc., they can react with the chelating agent in the form of ionic salts of carbonic acid or nitrate metal oxides to form chelates. Patent US017047 describes a method for co-precipitation of such chelates with amine oxalate solution, for reference only.

[0165] 3. Based on the proportions of other elements such as Ba and Nd ions in the NMBT structure, and according to the molecular weight of the corresponding coordination precursors, such as barium nitrate and neodymium nitrate, add them into the -Ti-C structure. ＝O Add an appropriate amount of NH3·H2O to the mixed solution after O-Mn- metal chelate condensation, reflux and stir at 85-95℃ for more than 12 hours to precipitate the reactants.

[0166] 4. The NMBT organic precursor precipitated from the mixed solution is aged for 48 hours, filtered, and the resulting solid precipitate is dried and ground into a fine powder for later use.

[0167] 5. Prepare or obtain high-purity tetragonal phase BaTiO3 (BT) particles with a particle size of 0.5-1μm in-house or from the market.

[0168] 6. Mix NMBT organic precursor powder and BT particles at a molecular weight ratio of 7:5 to 5:5.

[0169] 7. Sintering. The mixed NMBT precursor and BT particles are placed in (…). Figure 2-3 In a ceramic crucible, sintering is carried out at 800-1100℃ for 12 hours. The organic precursor is thermally decomposed and converted into gaseous products such as H₂O, NH₃, CO, CO₂, N₂, N₂O, NO, and NO₂. This yields NMBT particle powder with an NMBT coating on the surface of the BT particles.

[0170] 8. After sintering, the agglomerates produced by sintering of NMBT powder are ground into fine powder of 0.5-1 μm.

[0171] 9. After the above steps, the NMBT green powder meeting the structural requirements of NMBT and having intrinsic Ti-O-Mn is obtained.

[0172] 10. Using the plane screen printing technology, the NMBT powder is mixed with glycerin resin containing 30% PET according to the viscosity ratio required by screen printing, and the slurry is stirred uniformly by mechanical and ultrasonic stirring process. The slurry is coated on the conductive lining which can be used as the lower electrode 7 and can withstand 180°C temperature under vacuum or inert gas protection, and is put into a drying oven for 10-30 minutes to produce NMBT polycrystalline thin film 5 with a thickness of 5-150 μm, which is composed of NMBT particle powder 1 and insulating PET adhesive resin 4.

[0173] 11. Using the plane screen printing technology, Ag slurry is coated on the surface of NMBT thin film, and is put into a drying oven for 10-30 minutes to produce NMBT thin film upper electrode with a thickness of 0.1-20 μm. The NMBT basic system unit prototype is produced by combining the NMBT polycrystalline thin film with the upper and lower electrode ends. Figure 3 ).

[0174] 12. In order to prevent the environment (such as water vapor) from causing aging of NMBT thin film, the NMBT system prototype unit is kept isolated from the atmospheric environment, such as under nitrogen, or the necessary anti-aging insulating coating, such as epoxy resin, is coated on the surface of the system dielectric layer.

[0175] 13. Maturation process, under the control of 20-120°C cyclic temperature, using high-temperature-resistant wiring clamps and wires and other tools to connect to the positive and negative electrodes of the NMBT system unit. Modulate 100-2000V voltage, change the electric field polarity every 30-60 minutes, (the voltage size is determined by the design application voltage +10%), and cycle maturation for more than 2 hours.

[0176] 14. Determine the physical values of NMBT powder thin film. Under the action of external electric field, confirm the basic electrical physical values of NMBT thin film FPT, PPT, IPT and DPT in different states.

[0177] Although the above invention has been specifically and explicitly described, various changes and modifications of the invention may be made, which may be skillfully mastered as a technology, and such changes and modifications are intended to cover the invention, which belong to the additional claims of this patent.

Claims

1. A basic NMBT system unit with topological insulator phase transition characteristics, characterized in that, The basic NMBT system unit comprises a combined molecular structure of NMBT with a dual perovskite ABO3 structure, a particle structure, a dielectric thin film structure, upper and lower electrodes, wires, and a power supply. Its characteristic is that... In the dual-calcium-titanium composite molecular structure, the two molecules being combined belong to the two types of electronic materials: antiferromagnetic and ferroelectric. Their source molecules are NdMnO3 and BaTiO3, respectively. After combination, NdBaMnO3 is a derivative of NdMnO3, and BaNdTiO3 is a derivative of BaTiO3; This combined structure is simply called NMBT, and the two derived molecules after the combination are simply called manganese-based NM and titanium-based BT, respectively. After combination, there is a Mn-O-Ti ion oxygen bridge connecting the TOM structure between the manganese-based NM and the titanium-based BT at the B position; After combination, manganese-based and titanium-based materials retain the physical properties of their respective source molecular materials, namely the ferroelectric polarization properties of titanium-based BT and the antiferromagnetic and ferromagnetic phase transition properties of manganese-based NM. The particle structure in the basic NMBT system unit includes NMBT particles composed of BaTiO3 particles and an NMBT molecular coating layer present on their surface, wherein the particle size of the NMBT particles is 0.01-2 μm. The particulate structure with an NMBT layer satisfies the requirements of the topological insulator phase transition TIPT structure and mechanism; The dielectric thin film structure in the basic NMBT system unit is composed of polycrystalline NMBT powder particles and functional insulators. The NMBT dielectric film, along with the upper and lower electrodes, wires, and power supply, constitutes the prototype of the basic NMBT system unit. A single NMBT particle, along with an upper and lower electrode, wires, and a power source, constitutes a miniature NMBT basic system unit.

2. The basic NMBT system unit with topological insulator phase transition characteristics according to claim 1, characterized in that, NMBT particles and functional insulators are mixed with adhesive resin, and at least these particles are mixed with a small amount of slurry containing 30% organic PET insulating resin and glycerol. The NMBT film with a thickness of 5-150μm is produced by screen printing and drying process. These insulating materials include, but are not limited to, at least one of the following: polyethylene terephthalate (PET), polyimide, and their derivatives.

3. The basic NMBT system unit with topological insulator phase transition characteristics according to claim 1, characterized in that, The NMBT system prototype should have at least one of the following physical properties. a. Modulation voltage potential, with at least typical potentials at points 0, a, b, and c; b. At least the CMR effect exists, i.e. the highest increase of magnetoresistance is 10 14 Ω.cm or more at the voltage c point when the voltage IPT phase transition occurs. c. At least the AHE effect exists, that is, when the voltage PPT phase transition, at the voltage b point, the manganese-based NM spin balance is broken, the intrinsic magnetic field and the carrier flow conjugate produce the anomalous Hall effect, and the magnetoresistance decreases to 10 -2 Ω. cm, and has adiabatic characteristics; d. At least a TIPT formation mechanism exists, that is, during the voltage FPT, PPT, IPT phase transitions, after voltage point a, the NMBT particles have a topological insulator phase transition TIPT mechanism. e. At least a discrete mechanism exists, that is, when the external voltage DPT undergoes a discrete phase transition, at the voltage 0 point, the manganese-based NM is transformed from either an antiferromagnetic state or an ordered ferromagnetic state into a disordered low-resistance discrete ferromagnetic state. f. At least the ADE effect exists. Under the combined action of AHE and CMR effects, manganese-based NM produces the ADE effect, which increases the dielectric properties of the dielectric. g. At least an electronic damming effect exists. Under the combined action of AHE and CMR effects, manganese-based NM produces an electronic damming effect, causing charges to reside in holes in the NM conductive channels. The residence potential is changed by modulating the PPT voltage or by releasing external charges from the system electrodes. h. At least there exists electron accumulation and charge storage based on the Berry phase increment effect, induced by CMR, AHE, and ADE effects; i. At least there is electron accumulation and charge effect, resulting in capacitive charge imbalance at the two terminals of the system, which is different from the characteristics of conventional capacitors; j. At least manganese-based NM exhibits thermal insulation properties; electron transport in the conductive channel Mn3O2 is thermally adiabatic. k. At least one manganese-based NM exists, causing resistance jumps due to the AHE and CMR effects; 1. At least the following physical superposition states exist for manganese-based NM: namely, voltage PPT phase transition, setting the state with maximum intrinsic magnetic field strength, maximum carrier density, and minimum intrinsic magnetoresistance to 0; voltage IPT phase transition, setting the state with minimum intrinsic magnetic field strength, minimum carrier density, and maximum intrinsic magnetoresistance to 1; the intrinsic magnetic field, intrinsic magnetoresistance, and carrier physical quantities of manganese-based NM existing simultaneously between the 0 and 1 states are regarded as a superposition state. m, at least two NMBT system prototypes C + , C- combination structure in series, C + , C- electrode connection ground between C + , C- another positive and negative electrode respectively connected E, -E electric field source; in charging, C + , C - combination system with V, -V charge potential, in storage, C + , C - combination system with U, -U charge potential; n, at least the existence of reverse normative symmetry structure of titanium-based BT and manganese-based NM in the double perovskite structure of NMBT, the polarization of titanium-based BT and its derivatives based on tetragonal phase, and the distortion process of manganese-based NM and its derivatives based on antiferromagnetic and ferromagnetic states are also reversible, using negative electric field, negative potential V FPT , V PPT , V IPT , V DPT Phase transition, and reverse CMR, AHE, ADE physical effects.

4. The basic NMBT system unit with topological insulator phase transition characteristics according to claim 1, characterized in that, The compounds contained in the manganese-based NM and titanium-based BT in the composite molecules involved include at least one of the following ionic elements that are doped and substituted: Ca, Sr, Ba, Y, Pb, Zr and lanthanide rare earth ions, as well as derivative compounds of BaZrTiO3, BaNdYZrTiO3, PbNdTiO3 and PbNdZrTiO3 formed by at least these ions.

5. The basic NMBT system unit with topological insulator phase transition characteristics according to claim 1, characterized in that, The basic system unit prototype consists of a composite molecular dielectric thin film and an electrode material, wherein the electrode material includes, but is not limited to, one of the following: Au, Ag, Cu, Ni, Al, Zn, and other metal alloys and organic conductive materials, and the thickness of the motor material is 0.01-2 μm.

6. The basic NMBT system unit with topological insulator phase transition characteristics according to claim 1, characterized in that, Tetragonal BaTiO3 particles exist in at least other forms, with all or part of their inner and outer surfaces covered by NMBT molecular layers, and the particle size of the tetragonal BT particles is at least 10 nm-2 μm, with a c / a axis ratio ranging from at least 1.01 to 1.

85.

7. The basic NMBT system unit with topological insulator phase transition characteristics according to claim 1, characterized in that, NMBT at least one method using liquid phase synthesis, in the synthesis process, at least contains metal ion Mn chelate ligand and Ti chelate ligand, they at least each with two or more hydroxyl; At least in the presence of organic condensation reaction between the metal ion Mn chelate ligand and Ti chelate ligand, n[cH3CH(O - )COONH4]2Ti(OH)2+nMn[CH3CH(OH)COO]2, under the condition of 80-90 DEG C and strong acid catalysis, the long chain structure of-Ti-C=O-O-Mn- with carbonyl C=O, namely TCOM ligand is obtained; Mn chelating pre-ligand: Ti chelating pro-ligand: Condensation reaction of two chelated preligands: ∑ n -Ti Δ1 -C ＝0 -O-Mn Δ2 -O-C ＝0 -+nH2O n: 1, 2, 3, ... n, Δ1 is a precursor of other organic parts of the Ti chelate ligand that are not on the long chain of the polycondensation reaction; Δ2 is a precursor of other organic parts of the Mn chelate ligand that are not on the long chain of the polycondensation reaction; After condensation coordination, the Mn functional ligand and the Ti functional ligand are linked to form an organic precursor with a long-chain structure of -Ti-C=OO-Mn-OC=O-Ti-; At least one method exists where a precursor containing a mixture of Ba(NO3)2 and Nd(NO3)2, based on the proportions of various elements and doping elements in NMBT, is mixed with tetragonal BT particles. During co-precipitation and high-temperature powder sintering at 800-1100℃, a gas containing carbonyl C=O in -Ti-CO-Mn- is released, along with other N, C, O, and H ions contained in the precursor, forming a gas and liquid mixture. This process produces green ceramic particles with a dual-perovskite intrinsic Ti-O-Mn structure, coated with an NMBT film on the BT surface.

8. The basic NMBT system unit with topological insulator phase transition characteristics according to claim 1, characterized in that, To prevent aging caused by the NMBT system coming into contact with the atmospheric environment, or aging caused by unstable electrical properties due to the material's own stress dispersion; At least one method involves subjecting NMBT particle and film structures to static pressure treatment of 0.01-10 MPa to increase powder and film density, remove air, and reduce porosity. At least one of the following processes is used to insulate and seal the outer surface of the NMBT system dielectric in contact with the atmospheric environment: epoxy resin, PET, PU, ​​PVC. At least for the basic NMBT system unit prototype, under a voltage range of 0±2000V, a frequency of 10-120Hz, and an environment of 0-120℃, aging for 1-24 hours reduces the spontaneous domain stress inside the particles.

9. A basic NMBT system unit with topological insulator phase transition characteristics according to claim 1, characterized in that, There are at least two NMBT system prototypes C1 and C2 in series, parallel, and combined series and parallel structures; Connect the electrodes of C1 and C2 in series to ground, and connect the other positive and negative electrodes of C1 and C2 to the E or -E power supply respectively; The parallel connection connects multiple NMBT system prototypes into C′1 and C′2 groups. The grounding electrodes of C′1 and C′2 groups are connected together. The positive electrode of C′1 group is connected together, and the negative electrode of C′2 group is connected together. At least two NMBT system prototypes exist + , C - , combined as ADE charge balancing system; It includes at least series combination structures and parallel combination structures, as well as series and parallel hybrid structures, and is embedded in a single-layer or multilayer thin film in a circuit connection manner; By increasing or decreasing the number of units in the NMBT prototype system within groups C′1 and C′2, the dielectric parameters of U′ and -U′ are matched.

10. A basic NMBT system unit with topological insulator phase transition characteristics according to claim 2, characterized in that, The physical properties of NMBT must at least have the following applicable formulas. Since NMBT controls the NM distortion with voltage, the magnetic field phase transition causes changes in resistance and current. Its difference from the usual application of Ohm's law is that, based on the NM quantum superposition state of the TIPT structure, the resistance is not a fixed constant. As the independent variable voltage V of the composite function changes, the dependent variables resistance R and current I change in tandem. Under the phase transition voltage V PPT , V IPT , the resistance and the current value change greatly, and at least the following NMBT dedicated application formula exists, a. I=f(R), R=g(V), I=f[g(V)] b. The current is maximum at least at the point b when the voltage PPT is applied to the point b, R b The value is minimum, the current I max is maximum, the AHE effect appears; I max = V PPT-b / R b c. At least one of the resistances R max has a maximum value when the voltage IPT is applied to the point c, and the current I c has a minimum value, the CMR effect occurs; R max = V IPT-c / I c d. At least the following relationship exists, CMR and AHE work together to produce a dynamic change in ADE ε Effect, which has an impact on the dielectric properties of NMBT; ADE ε = g(f, t, V IPT , N, T, B) where: fBerry periodic frequency, t time, V IPT Voltage, i.e. potential < V IPT ≤ V PPT , N effective carrier concentration, T absolute temperature, B magnetic field strength; e、 Take N, T, B as relative fixed value, use μ NMBT to express, the relation d is simplified as: ADE ε = μ NMBT g(f, t, V IPT ) wherein: c potential < V IPT ≤ V PPT ; f. The following formula is used to calculate the dielectric value of a parallel plate capacitor; C' = ADE ε S / d + 1 / 2 ε bt S / d wherein ADE ε permittivity, ε bt relative dielectric constant, S surface area, d distance between electrodes g. Neglecting the dielectric constant ε bt , simplifying to: C ADE = ADE ε S / d The expressions for the potential, charge, and capacitance generated by the NMBT intercepted electrons at the dam are as follows: U NMBT = ∫ s ∫ d U · ndα = ∑Q ADE / C ADE where: U NMBT : Voltage at which the damming potential generates and maintains, c < U NMBT : Area S and thickness d integral; ∑Q ADE : Total amount of ADE damming electrons accumulated; C ADE : Dynamic abnormal dielectric constant.

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