A wafer leakage detection device and method, wafer device and method

Abstract

The application relates to the technical field of semiconductors, in particular to a wafer conveying leakage detection device and method and a wafer conveying device and method. The wafer conveying leakage detection device is applied to an epitaxial device, the epitaxial device comprises a conveying cavity and a reaction cavity, the wafer conveying leakage detection device comprises a transition cavity and a gas filling device for filling inert gas into the transition cavity and the conveying cavity, the conveying cavity is communicated with the reaction cavity through the transition cavity, a first plug valve is arranged between the conveying cavity and the transition cavity, a second plug valve is arranged between the transition cavity and the reaction cavity, a first vacuum gauge is arranged in the conveying cavity, an oxygen sensor and a second vacuum gauge are arranged in the transition cavity, and in this way, whether there is a leakage point in the conveying cavity can be detected in real time, so that air is prevented from entering the reaction cavity and combining with hydrogen in the reaction cavity to cause explosion.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to a wafer conveying leakage detection device and method, a wafer conveying device and method. BACKGROUND

[0002] In the epitaxial processing process, the epitaxial wafer needs to be pretreated in the previous process, and then the epitaxial wafer is delivered to the reaction cavity for epitaxial reaction, and the process is called wafer conveying.

[0003] In the existing wafer conveying device, in order to ensure the cleanliness of the epitaxial furnace cavity and the positive pressure in the conveying cavity, argon needs to be continuously introduced into the conveying cavity during the opening time of the equipment. When the wafer conveying process to the reaction cavity begins, the plug valve between the conveying cavity and the reaction cavity is opened, and the negative pressure of the reaction cavity will suck the gas in the conveying cavity into the reaction cavity. If the conveying cavity itself has a leakage point, the argon in the conveying cavity will mix with air. Before the plug valve is opened, air will not enter the reaction cavity due to the positive pressure of the conveying cavity. After the plug valve is opened, the argon mixed with air in the conveying cavity will enter the reaction cavity and mix with hydrogen in the reaction cavity, thereby causing an explosion.

[0004] At present, there is no effective technical solution to the above problems. SUMMARY

[0005] The purpose of the present application is to provide a wafer conveying leakage detection device and method, a wafer conveying device and method, which aims to solve the problem that air enters the reaction cavity and combines with hydrogen to cause an explosion during the wafer conveying process due to the leakage point in the conveying cavity.

[0006] In a first aspect, the present application provides a wafer conveying leakage detection device applied in an epitaxial device for detecting whether the epitaxial device has a leakage during wafer conveying. The epitaxial device includes a conveying cavity and a reaction cavity. The wafer conveying leakage detection device includes a transition cavity and a gas filling device for filling inert gas into the transition cavity and the conveying cavity. The conveying cavity is communicated with the reaction cavity through the transition cavity. A first plug valve is arranged between the conveying cavity and the transition cavity. A second plug valve is arranged between the transition cavity and the reaction cavity. A first vacuum gauge is arranged in the conveying cavity. An oxygen sensor and a second vacuum gauge are arranged in the transition cavity.

[0007] The wafer conveying leakage detection device provided by the present application sets a transition cavity between the conveying cavity and the reaction cavity, controls the communication and blockage between the conveying cavity and the transition cavity through the first plug valve, controls the communication and blockage between the transition cavity and the reaction cavity through the second plug valve, and detects whether there is oxygen in the gas entering the transition cavity from the conveying cavity through the oxygen sensor arranged in the transition cavity. If the oxygen sensor detects that there is oxygen in the gas, it proves that there is a leakage point in the conveying cavity. In this way, whether there is a leakage point in the conveying cavity can be detected in real time, so as to prevent air from entering the reaction cavity and combining with hydrogen in the reaction cavity to cause an explosion.

[0008] Optionally, the wafer leakage detection device provided by the present application further comprises a vacuum pumping device in communication with the transition chamber for vacuum pumping the transition chamber.

[0009] In a second aspect, the present application provides a wafer leakage detection method, which is applied to the wafer leakage detection device of the first aspect, and comprises the following steps:

[0010] S1, closing the first and second plug valves, and detecting the vacuum degrees of the transfer chamber and the transition chamber by the first and second vacuum gauges;

[0011] S2, judging whether the difference between the vacuum degrees of the transition chamber and the transfer chamber exceeds a preset vacuum degree difference, if the difference between the vacuum degrees of the transition chamber and the transfer chamber is less than or equal to the preset vacuum degree difference, performing step S3, and if the difference between the vacuum degrees of the transition chamber and the transfer chamber is greater than the preset vacuum degree difference, filling the inert gas into the transition chamber and the transfer chamber by the gas filling device until the difference between the vacuum degrees of the transition chamber and the transfer chamber is less than or equal to the preset vacuum degree difference, and then performing step S3;

[0012] S3, opening the first plug valve, and detecting whether there is oxygen in the transition chamber by the oxygen sensor to detect whether there is leakage during the wafer transfer.

[0013] The wafer leakage detection method provided by the present application sets a transition chamber between the transfer chamber and the reaction chamber, controls the communication and blockage between the transfer chamber and the transition chamber by the first plug valve, controls the communication and blockage between the transition chamber and the reaction chamber by the second plug valve, and detects whether there is oxygen in the gas entering the transition chamber from the transfer chamber by the oxygen sensor arranged in the transition chamber, if the oxygen sensor detects that there is oxygen in the gas, it proves that there is a leakage point in the transfer chamber, and by this way, the presence of the leakage point in the transfer chamber can be detected in real time, so as to prevent air from entering the reaction chamber and combining with the hydrogen in the reaction chamber to cause explosion.

[0014] Optionally, the wafer leakage detection method provided by the present application further comprises the following step after step S3:

[0015] S4, if no oxygen is detected in the transition chamber in step S3, opening the vacuum pumping device, vacuum pumping the transition chamber by the vacuum pumping device, adjusting the vacuum degrees in the transition chamber and the transfer chamber to a preset vacuum value, and detecting whether there is oxygen in the transition chamber by the oxygen sensor at the same time of vacuum pumping.

[0016] The application can detect the gas in the transition cavity through the oxygen sensor, so that the result of oxygen detection is more accurate.

[0017] In a third aspect, the application further provides a wafer conveying device, which is applied in an epitaxial device, and the epitaxial device comprises a conveying cavity and a reaction cavity. The wafer conveying device comprises a mechanical hand arranged in the conveying cavity, and the mechanical hand is used for conveying the epitaxial wafer into the reaction cavity. The wafer conveying device further comprises the wafer conveying gas leakage detection device of the first aspect.

[0018] The wafer conveying device provided by the application sets a transition cavity between the conveying cavity and the reaction cavity, controls the communication and blockage between the conveying cavity and the transition cavity through the first plug valve, controls the communication and blockage between the transition cavity and the reaction cavity through the second plug valve, and detects whether there is oxygen in the gas entering the transition cavity from the conveying cavity through the oxygen sensor arranged in the transition cavity. If the oxygen sensor detects that there is oxygen in the gas, it proves that there is a gas leakage point in the conveying cavity. In this way, the presence of a gas leakage point in the conveying cavity can be detected in real time, so as to prevent air from entering the reaction cavity and combining with hydrogen in the reaction cavity to cause an explosion. When it is detected that there is no gas leakage during the wafer conveying process, the mechanical hand is used to convey the epitaxial wafer into the reaction cavity for epitaxial reaction.

[0019] Optionally, the wafer conveying device provided by the application further comprises an exhaust device, and the exhaust device is in communication with the conveying cavity.

[0020] Optionally, the wafer conveying device provided by the application further comprises an exhaust device, and the exhaust device comprises an exhaust pipe, an exhaust pump and a third plug valve. The reaction cavity and the exhaust pump are in communication through the exhaust pipe, and the third plug valve is arranged on the exhaust pipe.

[0021] The exhaust device is arranged to exhaust the gas in the reaction cavity.

[0022] Optionally, the wafer conveying device provided by the application further comprises an exhaust device, and the exhaust device comprises an exhaust pipe, an exhaust pump and a third plug valve. The reaction cavity and the exhaust pump are in communication through the exhaust pipe, and the third plug valve is arranged on the exhaust pipe.

[0023] The third plug valve is arranged on the exhaust device to stabilize the gas pressure in the reaction cavity at a certain value.

[0024] In a fourth aspect, the application further provides a wafer conveying method, which is applied in the wafer conveying device of the third aspect. The wafer conveying method comprises the following steps:

[0025] S1a, the first plug valve and the second plug valve are closed, and the vacuum degrees of the conveying cavity and the transition cavity are detected through the first vacuum gauge and the second vacuum gauge;

[0026] S2a, judging whether the difference of vacuum degree between the transition cavity and the transfer cavity exceeds a preset vacuum degree difference, if the difference of vacuum degree between the transition cavity and the transfer cavity is less than or equal to the preset vacuum degree difference, executing step S3a; if the difference of vacuum degree between the transition cavity and the transfer cavity is greater than the preset vacuum degree difference, filling inert gas into the transition cavity and the transfer cavity through the gas filling device until the difference of vacuum degree between the transition cavity and the transfer cavity is less than or equal to the preset vacuum degree difference, and then executing step S3a;

[0027] S3a, opening the first plug valve, and detecting whether oxygen exists in the transition cavity through the oxygen sensor to detect whether air leakage exists in the wafer transferring process;

[0028] S4a, when detecting that no air leakage exists in the wafer transferring process, opening the second plug valve, and controlling the robot to transfer the epitaxial wafer from the transfer cavity to the reaction cavity.

[0029] Optionally, the wafer transferring method provided in the application further comprises the following step between step S3a and step S4a:

[0030] S31a, filling inert gas into the transition cavity and the transfer cavity through the gas filling device, so that the vacuum degree in the transition cavity and the transfer cavity is less than the vacuum degree in the reaction cavity.

[0031] The application controls the vacuum degree in the transition cavity and the transfer cavity to be less than the vacuum degree in the reaction cavity, so that when the second plug valve is opened, the gas in the transition cavity and the transfer cavity is pressed to the reaction cavity, thereby avoiding the diffusion of hydrogen in the reaction cavity to the transition cavity and the transfer cavity.

[0032] The wafer transferring method provided in the application sets the transition cavity between the transfer cavity and the reaction cavity, controls the communication and blockage between the transfer cavity and the transition cavity through the first plug valve, controls the communication and blockage between the transition cavity and the reaction cavity through the second plug valve, detects whether oxygen exists in the gas entering the transition cavity from the transfer cavity through the oxygen sensor arranged in the transition cavity, if the oxygen sensor detects that oxygen exists in the gas, it proves that there is an air leakage point in the transfer cavity, through this way, the wafer transferring method can detect whether an air leakage point exists in the transfer cavity in real time, thereby preventing air from entering the reaction cavity to combine with hydrogen in the reaction cavity to cause explosion, and when detecting that no air leakage exists in the wafer transferring process, the wafer transferring method can transfer the epitaxial wafer to the reaction cavity through the robot for epitaxial reaction.

[0033] From the above, the wafer conveying gas leakage detection device and method, and the wafer conveying device and method provided by the present application set a transition cavity between the conveying cavity and the reaction cavity, and control the communication and blockage between the conveying cavity and the transition cavity through the first plug valve, control the communication and blockage between the transition cavity and the reaction cavity through the second plug valve, and detect whether there is oxygen in the gas entering the transition cavity from the conveying cavity through the oxygen sensor arranged in the transition cavity. If the oxygen sensor detects that there is oxygen in the gas, it proves that there is a gas leakage point in the conveying cavity. In this way, it can be detected in real time whether there is a gas leakage point in the conveying cavity, so as to prevent air from entering the reaction cavity and combining with the hydrogen in the reaction cavity to cause explosion, and when it is detected that there is no gas leakage during the wafer conveying process, the epitaxial wafer is conveyed into the reaction cavity by the mechanical hand for epitaxial reaction.

[0034] Other features and advantages of the present application will be set forth in the following description, and in part will become apparent from the description, or can be learned by practice of the present application. The objects and other advantages of the present application will be realized and attained by means of the instrumentalities particularly pointed out in the written description and the appended drawings. BRIEF DESCRIPTION OF DRAWINGS

[0035] Figure 1 A structure schematic diagram of a wafer conveying gas leakage detection device provided by an embodiment of the present application.

[0036] Figure 2 A step flow chart of a wafer conveying gas leakage detection method provided by an embodiment of the present application.

[0037] Figure 3 A structure schematic diagram of a wafer conveying device provided by an embodiment of the present application.

[0038] Figure 4 A step flow chart of a wafer conveying method provided by an embodiment of the present application.

[0039] Label explanation: 1, conveying cavity; 11, first vacuum gauge; 12, mechanical hand; 2, transition cavity; 21, second vacuum gauge; 22, oxygen sensor; 3, reaction cavity; 4, first plug valve; 5, second plug valve; 6, gas filling device; 61, first gas filling valve; 62, second gas filling valve; 71, vacuum pump; 72, vacuum valve; 81, exhaust pump; 82, exhaust valve; 91, exhaust pump; 92, third plug valve; 93, pressure control butterfly valve. DETAILED DESCRIPTION

[0040] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0041] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the description of this application, terms such as "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0042] Currently, during the epitaxial wafer transfer process, if there is a leak in the transfer cavity, the inert gas in the transfer cavity will be mixed with air. After the gate valve between the transfer cavity and the reaction cavity is opened, the inert gas mixed with air in the transfer cavity will be drawn into the reaction cavity due to the negative pressure in the reaction cavity, causing the air to combine with the hydrogen in the reaction cavity and produce an explosion.

[0043] Firstly, referring to Figure 1 , Figure 1 This is a schematic diagram of a transducer leakage detection device provided in an embodiment of this application. Figure 1 A wafer transfer leakage detection device is provided, which is used in epitaxial equipment to detect whether there is leakage in the epitaxial equipment during the wafer transfer process. The epitaxial equipment includes a transfer chamber 1 and a reaction chamber 3. The wafer transfer leakage detection device includes a transition chamber 2 and a gas filling device 6 for filling the transition chamber 2 and the transfer chamber 1 with inert gas. The transfer chamber 1 is connected to the reaction chamber 3 through the transition chamber 2. A first gate valve 4 is provided between the transfer chamber 1 and the transition chamber 2. A second gate valve 5 is provided between the transition chamber 2 and the reaction chamber 3. A first vacuum gauge 11 is provided in the transfer chamber 1. An oxygen sensor 22 and a second vacuum gauge 21 are provided in the transition chamber 2.

[0044] Specifically, in the embodiment, the conveying cavity 1 and the transition cavity 2 are filled with inert gas by the gas filling device 6, and since the reaction cavity 3 is filled with hydrogen, in order to prevent the oxygen in the air in the conveying cavity 1 and the transition cavity 2 from combining with the hydrogen in the reaction cavity 3 to cause an explosion during the transmission process, the conveying cavity 1 and the transition cavity 2 need to be an inert gas environment, and therefore the conveying cavity 1 and the transition cavity 2 are filled with inert gas by the gas filling device 6, and in the embodiment, the inert gas is argon. Preferably, in the embodiment, the gas filling device 6 includes a first gas filling valve 61 and a second gas filling valve 62 arranged on the gas filling pipe, the first gas filling valve 61 adjusts the flow rate of argon filled into the conveying cavity 1 by adjusting the opening size, and the second gas filling valve 62 adjusts the flow rate of argon filled into the transition cavity 2 by adjusting the opening size.

[0045] Specifically, the transition cavity 2 is arranged between the conveying cavity 1 and the reaction cavity 3, and the oxygen sensor 22 is arranged in the transition cavity 2. During the gas leakage detection process, the second plug valve 5 is always kept closed, the first plug valve 4 is opened to communicate the conveying cavity 1 and the transition cavity 2, the gas in the conveying cavity 1 flows through the conveying cavity 1 and the transition cavity 2, and when the gas flows through the oxygen sensor 22 in the transition cavity 2, the oxygen sensor 22 detects whether there is oxygen in the gas. If the oxygen sensor 22 detects that there is oxygen, it indicates that there is a gas leakage point in the conveying cavity 1, and the gas leakage point needs to be repaired before the wafer continues to be transported, thereby preventing air from entering the reaction cavity 3.

[0046] Specifically, the first vacuum gauge 11 and the second vacuum gauge 21 are arranged in the conveying cavity 1 and the transition cavity 2, respectively. When the gas filling device 6 fills the conveying cavity 1 and the transition cavity 2 with inert gas, the first vacuum gauge 11 and the second vacuum gauge 21 obtain the vacuum degree of the conveying cavity 1 and the transition cavity 2 in real time to control the vacuum degree of the conveying cavity 1 and the transition cavity 2.

[0047] The wafer gas leakage detection device provided by the application can detect whether there is a gas leakage point in the conveying cavity 1 in real time, thereby preventing air from entering the reaction cavity 3 and combining with the hydrogen in the reaction cavity 3 to cause an explosion.

[0048] In some preferred embodiments, the wafer gas leakage detection device further comprises a vacuum pumping device, which is in communication with the transition cavity 2 and is used for performing vacuum pumping treatment on the transition cavity 2.

[0049] Specifically, the application is provided with a vacuumizing device for removing gas when vacuumizing is needed. Specifically, the vacuumizing device comprises a vacuumizing pump 71 and a vacuumizing valve 72. The vacuumizing pump 71 is communicated with the transition chamber 2 through a vacuumizing pipe, and the vacuumizing valve 72 is arranged on the vacuumizing pipe. The gas flow through the vacuumizing pipe is adjusted by controlling the opening of the vacuumizing valve 72. In the process of detecting the gas leakage, the first plug valve 4 needs to be opened. At this time, the conveying chamber 1 and the transition chamber 2 are communicated, and the gas in the conveying chamber 1 will flow between the conveying chamber 1 and the transition chamber 2. The gas in the conveying chamber 1 is driven to flow towards the transition chamber 2 by the vacuumizing device for detection. At the same time, in the process of vacuumizing by the vacuumizing device, in order to ensure the pressure balance, the inert gas needs to be continuously filled into the conveying chamber 1 and the transition chamber 2 by the gas filling device 6, so as to prevent the gas backflow caused by excessive pressure difference when the second plug valve 5 is opened, thereby affecting the wafer conveying.

[0050] In a second aspect, referring to Figure 2 , Figure 2 a step flow chart of a wafer conveying gas leakage detection method provided by the embodiment of the application, Figure 2 a wafer conveying gas leakage detection method shown in the figure, the wafer conveying gas leakage detection method is applied in the wafer conveying gas leakage detection device as described in the first aspect. The wafer conveying gas leakage detection method comprises the following steps:

[0051] S1, closing the first plug valve 4 and the second plug valve 5, and detecting the vacuum degree of the conveying chamber 1 and the transition chamber 2 by the first vacuum gauge 11 and the second vacuum gauge 21;

[0052] S2, judging whether the difference of the vacuum degree between the transition chamber 2 and the conveying chamber 1 exceeds a preset vacuum degree difference. If the difference of the vacuum degree between the transition chamber 2 and the conveying chamber 1 is less than or equal to the preset vacuum degree difference, step S3 is executed. If the difference of the vacuum degree between the transition chamber 2 and the conveying chamber 1 is greater than the preset vacuum degree difference, the inert gas is filled into the transition chamber 2 and the conveying chamber 1 by the gas filling device 6 until the difference of the vacuum degree between the transition chamber 2 and the conveying chamber 1 is less than or equal to the preset vacuum degree difference, and then step S3 is executed.

[0053] S3, opening the first plug valve 4, and detecting whether there is oxygen in the transition chamber 2 by the oxygen sensor 22 to detect whether there is gas leakage in the wafer conveying process.

[0054] Specifically, in step S2, since the opening at the connection between the transition cavity 2 and the transfer cavity 1 is relatively large, if the vacuum degree difference between the transition cavity 2 and the transfer cavity 1 is large, a strong airflow will be generated when the first insert valve 4 is opened, affecting the wafer transfer and epitaxial reaction. Therefore, preferably, in this embodiment, it is necessary to first obtain the vacuum degree of the transition cavity 2 and the transfer cavity 1 through the first vacuum gauge 11 and the second vacuum gauge 21 respectively, and calculate the difference in vacuum degree between the transition cavity 2 and the transfer cavity 1. When the difference in vacuum degree between the transition cavity 2 and the transfer cavity 1 is less than or equal to a preset vacuum degree difference, the subsequent steps are continued. When the difference in vacuum degree between the transition cavity 2 and the transfer cavity 1 is greater than the preset vacuum degree difference, it is necessary to fill the transition cavity 2 and the transfer cavity 1 with inert gas through the gas filling device 6 until the difference in vacuum degree between the transition cavity 2 and the transfer cavity 1 is less than or equal to the preset vacuum degree difference before proceeding with the subsequent steps. Preferably, in this embodiment, the preset vacuum degree difference is 50 mbar.

[0055] The air leakage detection method for the transfer chamber provided in this application embodiment sets up a transition chamber 2 between the transfer chamber 1 and the reaction chamber 3, and controls the connection and blockage between the transfer chamber 1 and the transition chamber 2 through a first gate valve 4, and controls the connection and blockage between the transition chamber 2 and the reaction chamber 3 through a second gate valve 5. An oxygen sensor 22 set in the transition chamber 2 detects whether there is oxygen in the gas entering the transition chamber 2 from the transfer chamber 1. If the oxygen sensor 22 detects the presence of oxygen in the gas, it proves that there is a leak in the transfer chamber 1. In this way, the presence of a leak in the transfer chamber 1 can be detected in real time, thereby preventing air from entering the reaction chamber 3 and combining with the hydrogen in the reaction chamber 3 to cause an explosion.

[0056] In some preferred embodiments, the following step is included after step S3:

[0057] S4. If no oxygen is detected in the transition chamber 2 in step S3, turn on the vacuum pumping device to perform vacuuming on the transition chamber 2, so that the vacuum degree in the transfer chamber 1 and the transition chamber 2 is adjusted to the preset vacuum value, and at the same time as vacuuming, the oxygen sensor 22 detects whether there is oxygen in the transition chamber 2.

[0058] Specifically, after the first plug valve 4 is opened, since the difference between the vacuum degrees of the transition chamber 2 and the transfer chamber 1 is small, the gas in the transfer chamber 1 cannot flow into the transition chamber 2, so it is not possible to accurately detect whether the gas in the transfer chamber 1 contains oxygen. Therefore, in the present embodiment, when the first plug valve 4 is opened for oxygen detection, if no oxygen is detected in the transition chamber 2, the vacuum pump 71 is started to pump the transition chamber 2 and the transfer chamber 1 to a preset vacuum value, so that the gas in the transfer chamber 1 flows into the transition chamber 2 for oxygen detection, and the oxygen detection result is more accurate. In the present embodiment, the preset vacuum value is 200 mbar. In order to improve the detection accuracy, the vacuum degree in the transition chamber 2 and the transfer chamber 1 needs to be maintained at the preset vacuum value during detection. Therefore, when the vacuum degree in the transition chamber 2 and the transfer chamber 1 reaches the preset vacuum value, the inflation device 6 is opened to inflate the transition chamber 2 and the transfer chamber 1 with inert gas, so that the vacuum degree in the transition chamber 2 and the transfer chamber 1 is maintained at 200 mbar.

[0059] In a third aspect, referring to Figure 3 , Figure 3 FIG. 1 shows a schematic structural view of a wafer conveying device according to an embodiment of the present application, Figure 3 The wafer conveying device shown in FIG. 1 is applied in an epitaxial device, which includes a transfer chamber 1 and a reaction chamber 3. The wafer conveying device includes a robot 12 arranged in the transfer chamber 1, which is used to convey an epitaxial wafer into the reaction chamber 3. The wafer conveying device further includes a wafer leakage detection device according to the first aspect.

[0060] The wafer conveying device provided in the present embodiment includes a transition chamber 2 arranged between the transfer chamber 1 and the reaction chamber 3. The communication and blockage between the transfer chamber 1 and the transition chamber 2 are controlled by a first plug valve 4. The communication and blockage between the transition chamber 2 and the reaction chamber 3 are controlled by a second plug valve 5. An oxygen sensor 22 arranged in the transition chamber 2 is used to detect whether there is oxygen in the gas entering the transition chamber 2 from the transfer chamber 1. If the oxygen sensor 22 detects that there is oxygen in the gas, it proves that there is a leakage point in the transfer chamber 1. In this way, it is possible to detect in real time whether there is a leakage point in the transfer chamber 1, so as to prevent air from entering the reaction chamber 3 and combining with hydrogen in the reaction chamber 3 to cause an explosion. When no leakage occurs during wafer conveying, the robot 12 is used to convey the epitaxial wafer into the reaction chamber 3 for epitaxial reaction.

[0061] In some preferred embodiments, the wafer conveying device further includes an exhaust device, which is in communication with the transfer chamber 1.

[0062] Specifically, in order to make the gas in the conveying cavity 1 flow to the transition cavity 2 and improve the accuracy of oxygen detection, the pressure in the conveying cavity 1 needs to be slightly higher than that in the transition cavity 2, so the inert gas needs to be continuously introduced into the conveying cavity 1 to make the conveying cavity 1 have a slight positive pressure. During the process of continuously introducing the inert gas into the conveying cavity 1, the air pressure in the conveying cavity 1 will increase. In order to prevent the pressure in the conveying cavity 1 from being too high, preferably, in the embodiment, an exhaust device is arranged in communication with the conveying cavity 1, which is used to exhaust the gas when the pressure in the conveying cavity 1 is too high, so as to maintain the air pressure in the conveying cavity 1.

[0063] Further, the exhaust device includes an exhaust pump 81 and an exhaust valve 82. The exhaust pump 81 is in communication with the conveying cavity 1 through an exhaust pipe, and the exhaust valve 82 is arranged on the exhaust pipe to control the flow of the gas on the exhaust pipe by adjusting the opening degree.

[0064] In some preferred embodiments, the wafer conveying device further includes an exhaust device. The exhaust device includes an exhaust pipe, an exhaust pump 91, and a third plug valve 92. The reaction cavity 3 and the exhaust pump 91 are in communication through the exhaust pipe, and the third plug valve 92 is arranged on the exhaust pipe.

[0065] Specifically, during the wafer conveying process, the gas in the transition cavity 2 and the conveying cavity 1 will enter the reaction cavity 3, which will cause the pressure in the reaction cavity 3 to be too high. In order to prevent the pressure in the reaction cavity 3 from being too high, in the embodiment, an exhaust device is arranged to exhaust the gas in the reaction cavity 3. Specifically, the exhaust device includes an exhaust pipe, an exhaust pump 91, and a third plug valve 92. The reaction cavity 3 and the exhaust pump 91 are in communication through the exhaust pipe, and the third plug valve 92 is arranged on the exhaust pipe. After the gas leakage detection is completed, the second plug valve 5 and the third plug valve 92 are opened, the mechanical hand 12 is controlled to convey the epitaxial wafer into the reaction cavity 3, and at the same time, the exhaust pump 91 works to exhaust the gas in the reaction cavity 3, so as to prevent the air pressure in the reaction cavity 3 from being too high.

[0066] In some preferred embodiments, the exhaust device further includes a pressure control butterfly valve 93, which is arranged on the exhaust pipe and located between the third plug valve 92 and the exhaust pump 91.

[0067] Specifically, in the epitaxial reaction, it is necessary to ensure that the pressure in the reaction cavity 3 remains stable at a preset reaction pressure. Therefore, in order to stabilize the pressure in the reaction cavity 3, the exhaust device further includes a pressure control butterfly valve 93 in the embodiment. By adjusting the opening degree of the pressure control butterfly valve 93, the flow of the gas on the exhaust pipe can be adjusted, so that the pressure in the reaction cavity 3 remains stable at the preset reaction pressure. Preferably, in order to improve the stability and safety of the reaction, the preset reaction pressure is one standard atmosphere, i.e. 1000 mbar.

[0068] In a fourth aspect, with reference to Figure 4 , Figure 4This is a flowchart illustrating the steps of a chip transfer method provided in an embodiment of this application. Figure 4 The chip transfer method shown is used in the chip transfer apparatus as described in the third aspect, and the chip transfer method includes the following steps:

[0069] S1a, close the first gate valve 4 and the second gate valve 5, and detect the vacuum level of the transition chamber 2 and the transfer chamber 1 through the first vacuum gauge 11 and the second vacuum gauge 21;

[0070] S2a. Determine whether the difference in vacuum level between the transfer chamber 1 and the transition chamber 2 exceeds a preset vacuum level difference. If the difference in vacuum level between the transition chamber 2 and the transfer chamber 1 is less than or equal to the preset vacuum level difference, then proceed to step S3a. If the difference in vacuum level between the transition chamber 2 and the transfer chamber 1 is greater than the preset vacuum level difference, then inert gas is injected into the transition chamber 2 and the transfer chamber 1 through the gas filling device 6 until the difference in vacuum level between the transition chamber 2 and the transfer chamber 1 is less than or equal to the preset vacuum level difference, then proceed to step S3a.

[0071] S3a. Open the first slide valve 4 and use the oxygen sensor 22 to detect whether there is oxygen in the transition chamber 2 in order to detect whether there is air leakage during the plate transfer process.

[0072] S4a. When no air leakage is detected during the wafer transfer process, the second insert valve 5 is opened, and the robot arm 12 is controlled to transport the epitaxial wafer from the transfer chamber 1 to the reaction chamber 3.

[0073] The wafer transfer method provided in this application embodiment sets up a transition cavity 2 between the transfer cavity 1 and the reaction cavity 3, and controls the connection and blockage between the transfer cavity 1 and the transition cavity 2 through a first gate valve 4, and controls the connection and blockage between the transition cavity 2 and the reaction cavity 3 through a second gate valve 5. An oxygen sensor 22 set in the transition cavity 2 detects whether there is oxygen in the gas entering the transition cavity 2 from the transfer cavity 1. If the oxygen sensor 22 detects the presence of oxygen in the gas, it proves that there is a leak in the transfer cavity 1. In this way, the presence of a leak in the transfer cavity 1 can be detected in real time, thereby preventing air from entering the reaction cavity 3 and combining with the hydrogen in the reaction cavity 3 to produce an explosion. When no leak is detected during the wafer transfer process, the epitaxial wafer is transported to the reaction cavity 3 by a robot arm 12 for epitaxial reaction.

[0074] In some preferred embodiments, the following step is further included between step S3a and step S4a:

[0075] S31a. Inert gas is introduced into the transition chamber 2 and the transfer chamber 1 through the gas filling device 6, so that the vacuum degree in the transition chamber 2 and the transfer chamber 1 is less than the vacuum degree in the reaction chamber 3.

[0076] Specifically, the epitaxial reaction in the reaction cavity 3 needs to be carried out in a hydrogen environment, and when the second plug valve 5 is opened during the wafer transfer process, the hydrogen in the reaction cavity 3 can diffuse into the transition cavity 2 and the transfer cavity 1, which can destroy the hydrogen environment in the reaction cavity 3 and thus affect the epitaxial reaction. Therefore, in order to prevent the hydrogen in the reaction cavity 3 from diffusing, preferably, in the present embodiment, before the second plug valve 5 is opened, the transition cavity 2 and the transfer cavity 1 are filled with inert gas through the gas filling device 6, so that the vacuum degree in the transition cavity 2 and the transfer cavity 1 is less than that in the reaction cavity 3, that is, the pressure in the transition cavity 2 and the transfer cavity 1 is slightly greater than that in the reaction cavity 3, so that when the second plug valve 5 is opened, the inert gas in the transition cavity 2 and the transfer cavity 1 presses against the reaction cavity 3, thereby preventing the hydrogen in the reaction cavity 3 from diffusing. Preferably, the air pressure in the reaction cavity 3 is 1000 mbar, and the air pressure in the transition cavity 2 and the transfer cavity 1 can be maintained at 1030 mbar through the gas filling device 6.

[0077] As can be seen from the above, the wafer transfer gas leakage detection device and method and the wafer transfer device and method provided by the present application set the transition cavity 2 between the transfer cavity 1 and the reaction cavity 3, control the communication and blocking between the transfer cavity 1 and the transition cavity 2 through the first plug valve 4, control the communication and blocking between the transition cavity 2 and the reaction cavity 3 through the second plug valve 5, and detect whether there is oxygen in the gas entering the transition cavity 2 from the transfer cavity 1 through the oxygen sensor 22 arranged in the transition cavity 2. If the oxygen sensor 22 detects that there is oxygen in the gas, it proves that there is a gas leakage point in the transfer cavity 1. In this way, whether there is a gas leakage point in the transfer cavity 1 can be detected in real time, so as to prevent air from entering the reaction cavity 3 and combining with the hydrogen in the reaction cavity 3 to cause an explosion, and when it is detected that there is no gas leakage during the wafer transfer process, the epitaxial wafer is transported into the reaction cavity 3 by the mechanical hand 12 for epitaxial reaction.

[0078] In the embodiments provided by the present application, it should be understood that the relative terms such as first and second etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between the entities or operations.

[0079] The above merely illustrates the embodiments of the present application and is not used to limit the protection scope of the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A wafer transfer leakage detection device, used in an epitaxial device, for detecting whether there is leakage in the epitaxial device during wafer transfer, the epitaxial device comprising a transfer chamber and a reaction chamber, characterized in that, The plate transfer leakage detection device includes a transition chamber and a gas filling device for filling the transition chamber and the transfer chamber with inert gas. The transfer chamber is connected to the reaction chamber through the transition chamber. A first gate valve is provided between the transfer chamber and the transition chamber, and a second gate valve is provided between the transition chamber and the reaction chamber. A first vacuum gauge is provided in the transfer chamber, and an oxygen sensor and a second vacuum gauge are provided in the transition chamber. The air leakage detection device for the transfer plate also includes a vacuum pumping device, which is connected to the transition cavity and is used to vacuum the transition cavity. During the leak detection process, the second gate valve remains closed. When the first gate valve is opened, the transmission chamber is connected to the transition chamber. The gas in the transmission chamber flows between the transmission chamber and the transition chamber. When the gas flows through the oxygen sensor in the transition chamber, the oxygen sensor detects whether there is oxygen in the gas. If the oxygen sensor detects the presence of oxygen, it indicates that there is a leak in the transmission chamber. The leak needs to be repaired before the transmission can continue, thereby preventing air from entering the reaction chamber.

2. A method for detecting air leakage in a transfer film, characterized in that, The plate transfer leakage detection method is used in the plate transfer leakage detection device as described in claim 1, and the plate transfer leakage detection method includes the following steps: S1. Close the first gate valve and the second gate valve, and detect the vacuum level of the transfer chamber and the transition chamber using the first vacuum gauge and the second vacuum gauge; S2. Determine whether the difference in vacuum level between the transition cavity and the transfer cavity exceeds a preset vacuum level difference. If the difference in vacuum level between the transition cavity and the transfer cavity is less than or equal to the preset vacuum level difference, proceed to step S3. If the difference in vacuum level between the transition cavity and the transfer cavity is greater than the preset vacuum level difference, inert gas is injected into the transition cavity and the transfer cavity through the gas filling device until the difference in vacuum level between the transition cavity and the transfer cavity is less than or equal to the preset vacuum level difference, then proceed to step S3. S3. Open the first insert valve and use the oxygen sensor to detect whether there is oxygen in the transition chamber to detect whether there is air leakage during the transfer process.

3. The method for detecting air leakage in a transfer element according to claim 2, characterized in that, The air leakage detection device for the transfer plate also includes a vacuum pumping device, which is connected to the transition cavity and is used to vacuum the transition cavity. After step S3, the device further includes the following steps: S4. If no oxygen is detected in the transition cavity in step S3, the vacuum pumping device is turned on to perform vacuuming on the transition cavity, so that the vacuum level in the transition cavity and the transfer cavity is adjusted to a preset vacuum value, and the presence of oxygen in the transition cavity is detected by the oxygen sensor at the same time as vacuuming.

4. A wafer transfer device used in an epitaxial apparatus, the epitaxial apparatus comprising a transfer chamber and a reaction chamber, the wafer transfer device comprising a robotic arm disposed within the transfer chamber, the robotic arm being used to transfer an epitaxial wafer into the reaction chamber, characterized in that, The film transfer device also includes a film transfer leakage detection device as described in claim 1.

5. The wafer transfer device according to claim 4, characterized in that, The transfer device also includes an exhaust device, which is connected to the transfer chamber.

6. The wafer transfer device according to claim 4, characterized in that, The plate transfer device also includes an exhaust device, which includes an exhaust pipe, an exhaust pump, and a third gate valve. The reaction chamber and the exhaust pump are connected through the exhaust pipe, and the third gate valve is disposed on the exhaust pipe.

7. The wafer transfer device according to claim 6, characterized in that, The exhaust device also includes a pressure-controlled butterfly valve, which is disposed on the exhaust pipe and located between the third gate valve and the exhaust pump.

8. A chip transfer method, characterized in that, The wafer transfer method is used in any one of the wafer transfer devices as described in claims 4-7, and the wafer transfer method includes the following steps: S1a. Close the first gate valve and the second gate valve, and detect the vacuum level of the transfer chamber and the transition chamber using the first vacuum gauge and the second vacuum gauge; S2a. Determine whether the difference in vacuum level between the transition cavity and the transfer cavity exceeds a preset vacuum level difference. If the difference in vacuum level between the transition cavity and the transfer cavity is less than or equal to the preset vacuum level difference, then proceed to step S3a. If the difference in vacuum level between the transition cavity and the transfer cavity is greater than the preset vacuum level difference, then inert gas is injected into the transition cavity and the transfer cavity through the gas filling device until the difference in vacuum level between the transition cavity and the transfer cavity is less than or equal to the preset vacuum level difference, then proceed to step S3a. S3a. Open the first insert valve and use the oxygen sensor to detect whether there is oxygen in the transition chamber in order to detect whether there is air leakage during the plate transfer process. S4a. When no air leakage is detected during the wafer transfer process, the second insert valve is opened, and the robotic arm is controlled to transport the epitaxial wafer from the transfer chamber to the reaction chamber.

9. A chip transfer method according to claim 8, characterized in that, The following steps are also included between step S3a and step S4a: S31a. Inert gas is introduced into the transition cavity and the transfer cavity through the gas filling device, so that the vacuum degree in the transition cavity and the transfer cavity is less than the vacuum degree in the reaction cavity.

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