A co-cathode micro LED without substrate peeling and a preparation method thereof

Abstract

The application discloses a co-cathode micro LED without substrate stripping and a preparation method thereof, adopts a wafer form to perform bonding of an epitaxial substrate and an IC, and adopts a co-cathode P-GaN light-emitting structure; the co-cathode micro LED is subjected to substrate opening at a non-pixel point position, and then LED P electrodes are deposited to connect the P-GaN and an IC anode conductive hole. By adopting the technical scheme, the epitaxial substrate is not removed, the epitaxial layer is not damaged, the micro-LED performance is not affected, the pixel points are not damaged, and the pixel points are not peeled off; the bonding area of the substrate and the IC is larger, and the bonding is more firm; the whole wafer bonding has a lower precision requirement for a bonding machine; the co-cathode P-GaN light-emitting design guarantees light-emitting efficiency and does not damage a quantum well layer; the substrate is opened at the non-pixel point position, and then the LED P electrodes are deposited to connect the P-GaN and the IC anode conductive hole, so that pixel point damage is effectively avoided.

Description

Technical Field

[0001] This invention belongs to the technical field of LED devices and their fabrication processes. More specifically, this invention relates to a novel common-cathode micro LED that does not require substrate removal and its fabrication method. Background Technology

[0002] Micro LED is a new generation of display technology with self-emissive display characteristics. Compared with the existing organic light-emitting diode (OLED) technology, Micro LED display devices have a series of advantages such as higher brightness and stability, better luminous efficiency, lower power consumption, and faster response time.

[0003] The display principle of Micro LED display devices is to thin, miniaturize, and array the LED structure, with a size of only about 1 to 10 μm; then, the display is formed through monolithic integration or mass transfer methods.

[0004] Whether it is monolithic integration or mass transfer, the important step of substrate stripping and removal is required. During the substrate stripping and removal process, a large stress is generated. Since the pixels are relatively independent and the pixel size is extremely small, they are particularly prone to damage or breakage of the bonding metal due to stress.

[0005] The above-mentioned technical solutions in the prior art, whether applied to the display field or the lighting field, all have the following problems and defects:

[0006] 1. The process of removing the epitaxial substrate generates significant stress, which directly damages the epitaxial layer and severely affects the performance of micro-LEDs;

[0007] 2. This process is pixel-to-pixel bonding; for processes where LED pixels are pre-processed and then bonded to ICs, the pixels are already formed and are easily damaged under high temperature and pressure during bonding. The bonding effect is greatly affected by the thermal expansion coefficient of the material, and the bonding machine requires high precision. Furthermore, the pixels are relatively independent when the substrate is peeled off, and they are easily damaged under the stress generated. The bonding metal is prone to breakage, which leads to the pixels falling off easily.

[0008] 3. The process of permanently bonding the LED P-side to the IC and then peeling off the substrate to process the pixels is such that if N-GaN is not removed, the light extraction efficiency will be severely affected due to its large thickness. If N-GaN is removed to expose the LED quantum well layer, the light extraction efficiency can be improved, but the process is more difficult. Even if ALE (atomic layer etching) process is used, the LED quantum well layer is very easy to be damaged.

[0009] 4. For the common anode process of drilling holes at the bottom of LED pixels without peeling off the substrate, directly etching away the substrate at the bottom of the pixel is difficult and can easily damage the epitaxial layer.

[0010] Therefore, there is an urgent need for a new common cathode micro-LED bonding scheme and its fabrication method that does not require substrate stripping to overcome the above problems. Summary of the Invention

[0011] This invention provides a common cathode micro LED that does not require substrate stripping. Its purpose is to reduce and avoid damage to the epitaxial layer, while improving the bonding strength between the LED and the IC, thereby improving the overall light extraction efficiency of the device.

[0012] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0013] The common cathode micro LED of the present invention, which does not require substrate stripping, uses a wafer form for substrate bonding to IC; at the same time, the cathode micro LED adopts a common cathode P-GaN light-emitting structure.

[0014] The common cathode micro LED has substrate openings at non-pixel locations, and then an LED P electrode is deposited to connect the P-GaN electrode to the IC anode conductive hole.

[0015] To achieve the same inventive objective as the above-described technical solutions, this invention also provides a method for fabricating a common cathode micro LED without substrate removal, the process of which is as follows:

[0016] 1) The P-face of the LED epitaxial wafer is bonded to the SiC or graphite disk in real time using solid wax. After CMP polishing to thin it and chemical solution etching to release stress, the thickness of the epitaxial substrate is finally controlled to less than 5um to facilitate subsequent processing.

[0017] 2) Use processes such as direct bonding, hybrid bonding, and surface-active bonding to permanently bond the LED substrate to the IC;

[0018] 3) Release the temporary bond, remove the LED epitaxial wafer from the SiC or graphite disk, and thoroughly clean to remove any residual solid wax on the P-side;

[0019] 4) Use the notch positioning at the edge of the IC for photolithography and development, and then use equipment such as ICP / RIE to dry etch or chemically etch to remove the GaN layer + substrate + bonding layer at the wafer source mark point position, so that the mark point is exposed, which facilitates fine alignment in subsequent operations.

[0020] 5) Perform photoresist homogenization and photolithography to protect the pixels with photoresist and expose all other positions. Then remove all P-GaN layers and quantum well layers except for the pixels until the N-GaN layer is exposed.

[0021] 6) Perform photoresist homogenization and photolithography again to expose the cathode ring and the corresponding area of ​​the IC anode hole, while the rest of the area is protected by photoresist. Then, remove the N-GaN layer, substrate, and bonding layer in the area corresponding to the cathode ring and IC anode hole until the cathode and anode conductive holes on the IC are fully exposed.

[0022] 7) A passivation layer is deposited on the front side of the wafer source, with a thickness greater than or equal to 10 nm; the passivation layer is deposited using CVD / PECVD / ALD equipment to deposit SiO2 / Al2O3 / SiN. x Materials such as [material name] are used as passivation layers.

[0023] 8) Use equipment such as ICP / RIE to dry etch or chemically etch to remove the passivation layer covering the cathode, anode conductive holes, and N-GaN surface. The sidewalls of the anode conductive holes must be completely covered by the passivation layer.

[0024] 9) A cathode conductive ring and N interconnect electrode are fabricated on the cathode ring region and N-GaN surface using a negative adhesive stripping method. The pixel point and the surface of the anode hole shall not be covered by the deposited metal, and the distance between the interconnect electrode on the N-GaN surface and the pixel point and the edge of the anode hole shall be more than 0.1 μm.

[0025] 10) Deposit a passivation layer again on the front side of the wafer source, with a passivation layer thickness greater than or equal to 10 nm;

[0026] 11) Use equipment such as ICP / RIE to dry etch or chemically etch to remove the passivation layer covering the surface of the pixel and the anode conductive hole. The edge of the removed passivation layer should be on the P-GaN mesa of the pixel and the area of ​​the pixel surface covered by the passivation layer should be less than half. The passivation layer completely covers the sidewall of the anode conductive hole and is connected to the passivation layer on the N-GaN surface as a whole.

[0027] 12) A transparent current spreading layer ITO / IZO is deposited on the entire surface of the wafer source, and then annealed using a furnace tube / RTA / RTP / hot plate machine to increase its adhesion and improve the ohmic contact with P-GaN; then the current spreading layer ITO / IZO in the area outside the P-GaN surface of the pixel is removed by dry etching or chemical etching using equipment such as ICP / RIE.

[0028] 13) An LED P electrode is prepared on the surface of the wafer source using a negative adhesive metal stripping method so that P-GaN is connected to the anode conductive hole. The area covered by the LED P electrode on the surface of each pixel should be less than half and it is only connected to the corresponding single anode conductive hole through the LED P electrode.

[0029] 14) Finally, after coating the surface of the source material with anti-crosstalk adhesive / quantum dot material / color filter film / OC filler adhesive in sequence, cut it and then perform die bonding / wafer bonding and black glue curing to fix the bonding wires. Then, a common cathode micro-led screen that can be lit up normally without substrate stripping can be obtained.

[0030] In 1), the substrate may be Si-based / Al2O3-based / GaN-based / GaAs-based; the chemical solution etching treatment uses a mixed strong acid / strong alkali solution.

[0031] In step 5), all removal methods employ dry etching or chemical etching using equipment such as ICP / RIE.

[0032] In step 6), the complete removal is performed using dry etching or chemical etching methods with equipment such as ICP / RIE.

[0033] In the aforementioned 9), the negative adhesive stripping method employs E-beam equipment for deposition or Sputter equipment for metal sputtering. The adhesive layer is a metal such as Cr / Ni / Pd, the barrier layer is a metal such as Ti / Pt / Ge, and the conductive layer is a metal or alloy such as Al / Cu / Au / Ag.

[0034] In step 10), the passivation layer is deposited using CVD / PECVD / ALD equipment to deposit SiO2 / Al2O3 / SiN. x Materials.

[0035] In 12), the deposited transparent current spreading layer ITO / IZO can be deposited using an E-beam device or sputtered using a sputter device, and the film thickness is between 10nm and 240nm.

[0036] In the aforementioned 13), the negative adhesive metal stripping method employs E-beam equipment for deposition or Sputter equipment for sputtering metal. The adhesive layer is a metal such as Cr / Ni / Pd, the barrier layer is a metal such as Ti / Pt / Ge, and the conductive layer is a metal or alloy such as Al / Cu / Au / Ag.

[0037] The present invention adopts the above-mentioned technical solutions: 1. No epitaxial substrate removal is performed, which avoids damage to the epitaxial layer, avoids affecting the performance of micro-LEDs, avoids damage to pixels, and avoids pixel detachment; 2. The substrate and IC are bonded in wafer form, resulting in a larger bonding area and a stronger bond; whole-wafer bonding has lower precision requirements for the bonding machine; 3. A common cathode P-GaN light extraction design is adopted, which ensures light extraction efficiency without damaging the quantum well layer; 4. A substrate opening is made at non-pixel locations, and then the LED P electrode is deposited to connect the P-GaN and the IC anode conductive hole, effectively avoiding pixel damage. Attached Figure Description

[0038] The following is a brief explanation of the contents shown in the attached figure and the markings therein:

[0039] Figure 1 This is a cross-sectional view of the device before it is coated with anti-crosstalk adhesive / quantum dot material / color filter film / OC filler.

[0040] Figure 2 yes Figure 1 A planar anatomical diagram of the structure shown.

[0041] The markings in the diagram are as follows:

[0042] 1. N-interconnect electrode, 2. Conductive transparent layer, 3. Quantum well, 4. P-GaN, 5. LED P electrode, 6. Passivation layer, 7. IC cathode ring, 8. IC cathode conductive hole, 9. IC anode conductive hole, 10. N-GaN, 11. Epitaxial substrate, 12. Bonding layer, 13. IC. Detailed Implementation

[0043] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings, so as to help those skilled in the art to have a more complete, accurate and in-depth understanding of the inventive concept and technical solution of the present invention.

[0044] like Figure 1 , Figure 2 The structure of this invention represents a novel common-cathode micro LED that does not require substrate stripping. To address the problems and overcome the shortcomings of existing technologies, and to achieve the inventive objective of reducing and avoiding damage to the epitaxial layer (quantum well 3+P-GaN4+N-GaN10), the technical solution adopted by this invention is as follows:

[0045] The common cathode micro LED of the present invention, which does not require substrate stripping, uses a wafer form for bonding the epitaxial substrate 11 to IC13; at the same time, the cathode micro LED adopts a common cathode P-GaN4 light-emitting structure.

[0046] A conductive transparent layer 2 is formed on the surface of P-GaN4.

[0047] The common cathode micro LED has substrate openings at non-pixel locations, and then LED P electrodes 5 are deposited to connect P-GaN4 and IC anode conductive holes 9.

[0048] The beneficial effects of the above-mentioned technical solution of the present invention are:

[0049] 1. This invention does not remove the N-GaN10+ epitaxial substrate 11, thus avoiding damage to the epitaxial layer, avoiding impact on micro-led performance, avoiding damage to pixels, and preventing pixel detachment.

[0050] 2. By bonding the epitaxial substrate 11 to IC13 in wafer form, the bonding area is larger and the bonding is stronger. The precision requirements of the bonding machine are lower when bonding the whole wafer.

[0051] 3. The common cathode P-GaN4 light extraction design ensures light extraction efficiency without damaging the three layers of the quantum well;

[0052] 4. Make substrate openings at non-pixel locations, and then deposit LED P electrodes 5 to connect P-GaN4 and IC anode conductive holes 9, effectively avoiding pixel damage.

[0053] The present invention discloses a novel method for fabricating a common cathode micro LED without substrate stripping, the process of which is as follows:

[0054] 1. The P-face of the LED epitaxial wafer is bonded to the SiC or graphite disk in real time using solid wax. After thinning by CMP polishing (chemical mechanical polishing) and stress relief by chemical solution etching, the substrate thickness is finally controlled to be less than 5um to facilitate subsequent processing.

[0055] The substrate may be Si-based / Al2O3-based / GaN-based / GaAs-based;

[0056] The aforementioned chemical solution corrosion treatment uses a mixed strong acid / strong alkali solution;

[0057] 2. Use direct bonding, hybrid bonding, or surface-active bonding processes to permanently bond the LED substrate to the IC13;

[0058] 3. Release the temporary bond, remove the LED epitaxial wafer from the SiC or graphite disk, and thoroughly clean to remove any residual solid wax on the P-side;

[0059] 4. Using the notch (polished substrate notch) on the edge of IC13 for positioning, perform photolithography and development. Then, use equipment such as ICP / RIE (inductively coupled plasma etching / reactive ion etching) or chemical etching methods to remove the GaN layer + epitaxial substrate 11 + bonding layer 12 at the wafer source mark point position, so that the mark point is exposed (GaN + epitaxial substrate 11 + bonding layer 12 has poor light transmittance), which facilitates fine alignment in subsequent operations.

[0060] 5. Perform photoresist homogenization and photolithography to protect the pixels with photoresist and expose all other positions. Then remove all P-GaN4 layer and quantum well 3 layer except for the pixels until the N-GaN10 layer is exposed.

[0061] All the removal methods mentioned above employ dry etching or chemical etching methods using equipment such as ICP / RIE.

[0062] 6. Perform photoresist homogenization and photolithography again to expose the corresponding areas of IC cathode ring 7 and IC anode conductive hole 9, while the remaining areas are protected by photoresist. Then, remove the N-GaN10 layer, epitaxial substrate 11, and bonding layer 12 in the corresponding areas of IC cathode ring 7 and IC anode conductive hole 9 until the cathode conductive hole 8 and anode conductive hole 9 on IC13 are fully exposed.

[0063] All the removal methods mentioned above employ dry etching or chemical etching methods using equipment such as ICP / RIE.

[0064] 7. A passivation layer 6 is deposited on the front side of the wafer source, with a thickness of 10 nm or more. The passivation layer 6 is deposited using CVD / PECVD / ALD (chemical vapor deposition / plasma-enhanced CVD / atomic layer deposition) equipment to deposit SiO2 / Al2O3 / SiN. x Materials such as [material name] are used as passivation layer 6.

[0065] 8. Use equipment such as ICP / RIE (inductively coupled plasma etching / reactive ion etching) or chemical etching methods to remove the passivation layer 6 covering the cathode conductive hole 8, anode conductive hole 9, and N-GaN10 surface. The sidewall of the anode conductive hole 9 must be completely covered by the passivation layer 6.

[0066] 9. A cathode conductive ring and an N interconnect electrode 1 are fabricated on the cathode ring region and the N-GaN10 surface using a negative adhesive stripping method. The pixel point and the surface of the anode hole shall not be covered by the deposited metal, and the distance between the interconnect electrode 1 on the N-GaN10 surface and the edge of the pixel point and the anode hole shall be greater than 0.1 μm.

[0067] The described negative adhesive removal method uses E-beam (electron beam evaporation) equipment to deposit metal or Sputter (magnetron sputtering) equipment to sputter metal. The adhesive layer is a metal such as Cr / Ni / Pd, the barrier layer is a metal such as Ti / Pt / Ge, and the conductive layer is a metal or alloy such as Al / Cu / Au / Ag. It includes:

[0068] Cr / Al / Ti / Ni / Pt / Ni / Pt / Ni / Pt / Au;

[0069] 25A / 50A / 25A / 50A / 500A / 50A / 500A / 50A / 500A / 5000A;

[0070] 10. Deposit a passivation layer 6 again on the front side of the wafer source (using CVD / PECVD / ALD equipment to deposit SiO2 / Al2O3 / SiN). x (Using materials such as [material name] as passivation layer material), the thickness of passivation layer 6 is greater than or equal to 10 nm;

[0071] 11. Use equipment such as ICP / RIE to dry etch or chemically etch to remove the passivation layer 6 covering the surface of the pixel and the anode conductive hole 9. The edge of the removed passivation layer 6 should be on the P-GaN4 mesa of the pixel and the area of ​​the pixel surface covered by the passivation layer 6 should be less than half. The passivation layer 6 completely covers the sidewall of the anode conductive hole 9 and is connected to the passivation layer 6 on the N-GaN10 surface as a whole.

[0072] 12. A transparent current-spreading layer of ITO / IZO is deposited on the entire surface of the substrate, followed by annealing using a furnace tube / RTA / RTP / hot plate machine to increase its adhesion and improve the ohmic contact with P-GaN4. Then, the ITO / IZO current-spreading layer outside the P-GaN4 surface of the pixel is removed using dry etching or chemical etching methods such as ICP / RIE.

[0073] The transparent current spreading layer on the surface of the anode conductive hole 9 can be removed or retained.

[0074] (RTA—Rapid Annealing Furnace; RTP—Rapid Heat Treatment Furnace; ITO—Transparent Current Spreading Layer; IZO—Indium Zinc Oxide.)

[0075] The deposited transparent current-spreading layer ITO / IZO can be deposited using an E-beam device or sputtered using a sputter device, and the film thickness is between 10nm and 240nm.

[0076] 13. An LED P electrode 5 is prepared on the surface of the chip source using a negative adhesive metal stripping method so that P-GaN4 is connected to the anode conductive hole 9. The area covered by the LED P electrode 5 on the surface of each pixel should be less than half, and it is only connected to the corresponding single anode conductive hole 9 through the LED P electrode 5.

[0077] The aforementioned negative adhesive metal stripping method employs E-beam (electron beam evaporation) equipment for deposition or sputter (magnetron sputtering) equipment for metal sputtering. The adhesive layer is a metal such as Cr / Ni / Pd, the barrier layer is a metal such as Ti / Pt / Ge, and the conductive layer is a metal or alloy such as Al / Cu / Au / Ag. It includes:

[0078] Cr / Al / Ti / Ni / Pt / Ni / Pt / Ni / Pt / Au

[0079] 25A / 50A / 25A / 50A / 500A / 50A / 500A / 50A / 500A / 5000A;

[0080] 14. Finally, after applying anti-crosstalk adhesive / quantum dot material / color filter film / OC filler adhesive to the surface of the source material in sequence, cut it, perform die bonding / wafer bonding, and then fix the bonding wires with black glue to obtain a common cathode micro-led screen that can be lit up normally without substrate stripping.

[0081] Die bonding; wafer bonding.

[0082] The present invention has been described above by way of example with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any non-substantial improvements made using the inventive concept and technical solution of the present invention, or the direct application of the inventive concept and technical solution of the present invention to other occasions without modification, are all within the protection scope of the present invention.

Claims

1. A method for fabricating a common cathode micro LED without substrate stripping, characterized in that: The preparation method is as follows: 1) The P-face of the LED epitaxial wafer is bonded to the SiC or graphite disk in real time with solid wax. After CMP polishing to reduce the thickness and chemical solution etching to release stress, the thickness of the epitaxial substrate (11) is finally controlled below 5um, which is convenient for subsequent processing. 2) Using a direct bonding method / hybrid bonding method / surface active bonding method, the LED substrate is permanently bonded to the IC (13); 3) Release the temporary bond, remove the LED epitaxial wafer from the SiC or graphite disk, and thoroughly clean to remove any residual solid wax on the P-side; 4) Use the notch positioning at the edge of IC (13) for photolithography and development, and then use ICP / RIE equipment for dry etching or chemical etching to remove the GaN layer + epitaxial substrate (11) + bonding layer (12) at the wafer source mark point position, so that the mark point is exposed, which facilitates fine alignment in subsequent operations. 5) Perform photolithography and development to protect the pixel points with photoresist and expose all other positions. Then remove all P-GaN (4) layer and quantum well (3) layer except for the pixel points until the N-GaN (10) layer is exposed. 6) Perform photoresist photolithography and development again to expose the corresponding areas of IC cathode ring (7) and IC anode conductive hole (9), while the remaining areas are protected by photoresist. Then, remove the N-GaN (10) layer, epitaxial substrate (11) and bonding layer (12) in the corresponding areas of IC cathode ring (7) and IC anode conductive hole (9) until the cathode conductive hole (8) and anode conductive hole (9) on IC (13) are fully exposed. 7) A passivation layer (6) is deposited on the front side of the wafer source, and the thickness of the passivation layer (6) is greater than or equal to 10 nm; 8) Use ICP / RIE equipment for dry etching or chemical etching to remove the passivation layer (6) covering the surface of the cathode conductive hole (8), anode conductive hole (9), and N-GaN (10), wherein the sidewall of the anode conductive hole (9) must be completely covered by the passivation layer (6); 9) A cathode conductive ring and an N interconnect electrode (1) are prepared on the cathode ring area and the N-GaN (10) surface using a negative adhesive stripping method. The pixel point and the surface of the anode hole shall not be covered by the deposited metal, and the interconnect electrode (1) on the N-GaN (10) surface shall be at least 0.1 μm away from the pixel point and the edge of the anode hole. 10) A passivation layer is deposited again on the front side of the wafer source, and the thickness of the passivation layer (6) is greater than or equal to 10 nm; 11) Use ICP / RIE equipment for dry etching or chemical etching to remove the passivation layer (6) covering the surface of the pixel and the anode conductive hole (9). The edge of the removed passivation layer (6) should be on the P-GaN (4) mesa of the pixel, and the area of ​​the pixel surface covered by the passivation layer (6) should be less than half. The passivation layer (6) completely covers the sidewall of the anode conductive hole (9) and is connected to the passivation layer (6) on the N-GaN (10) surface as a whole. 12) A transparent current spreading layer ITO / IZO is deposited on the entire surface of the source material, and then annealed using a furnace tube / RTA / RTP / hot plate machine to increase its adhesion and improve the ohmic contact with P-GaN (4); then the current spreading layer ITO / IZO in the area outside the surface of the pixel P-GaN (4) is removed by dry etching or chemical etching using ICP / RIE equipment. 13) LED P electrode (5) is prepared on the surface of the chip source using the negative adhesive metal stripping method so that P-GaN (4) is connected to the anode conductive hole (9). The area covered by LED P electrode (5) on the surface of each pixel should be less than half and connected to the corresponding single anode conductive hole (9) through LED P electrode (5). 14) Finally, after coating the surface of the source material with anti-crosstalk adhesive / quantum dot material / color filter film / OC filler adhesive in sequence, cut it and then perform die bonding / wafer bonding and black glue curing to fix the bonding wires. Then, a common cathode micro-led screen that can be lit up normally without substrate stripping can be obtained.

2. The method for fabricating a common cathode micro LED without substrate stripping according to claim 1, characterized in that: In 1), the substrate is Si-based / Al2O3-based / GaN-based / GaAs-based; the chemical solution etching treatment uses a mixed strong acid / strong alkali solution.

3. The method for fabricating a common cathode micro LED without substrate stripping according to claim 1, characterized in that: In 5), all removal methods employ ICP / RIE equipment dry etching or chemical etching methods.

4. The method for fabricating a common cathode micro LED without substrate stripping according to claim 1, characterized in that: In 6), all removal is performed using ICP / RIE equipment dry etching or chemical etching methods.

5. The method for fabricating a common cathode micro LED without substrate stripping according to claim 1, characterized in that: In 9), the negative adhesive stripping method uses E-beam equipment to deposit metal or Sputter equipment to sputter metal. The adhesive layer is metal Cr / Ni / Pd, the barrier layer is metal Ti / Pt / Ge, and the conductive layer is metal Al / Cu / Au / Ag or an alloy.

6. The method for fabricating a common cathode micro LED without substrate stripping according to claim 1, characterized in that: In step 10), the passivation layer (6) is deposited using a CVD / PECVD / ALD device to deposit SiO2 / Al2O3 / SiN. x The material is used as the passivation layer material.

7. The method for fabricating a common cathode micro LED without substrate stripping according to claim 1, characterized in that: In 12), the deposited transparent current extension layer ITO / IZO can be deposited using an E-beam device or sputtered using a sputter device, and the film thickness is between 10nm and 240nm.

8. The method for fabricating a common cathode micro LED without substrate stripping according to claim 1, characterized in that: In 13), the negative adhesive metal stripping method uses an E-beam device to deposit metal or a sputter device to sputter metal. The adhesive layer is metal Cr / Ni / Pd, the barrier layer is metal Ti / Pt / Ge, and the conductive layer is metal Al / Cu / Au / Ag or an alloy.

9. The method for fabricating a common cathode micro LED without substrate stripping according to claim 1, characterized in that: The cathode micro LED is bonded to the IC (13) in wafer form; at the same time, the cathode micro LED adopts a common cathode P-GaN (4) light-emitting structure.

10. The method for fabricating a common cathode micro LED without substrate stripping according to claim 9, characterized in that: The common cathode micro LED has substrate openings at non-pixel locations, and then LED P electrodes (5) are deposited to connect P-GaN (4) and IC anode conductive holes (9).

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