Semiconductor light-emitting element and method for manufacturing a semiconductor light-emitting element

Abstract

Provided is a semiconductor light-emitting device that has better light-emitting characteristics and improved reverse current characteristics compared to conventional light-emitting devices. 【Solution means】 The semiconductor light-emitting device according to the present invention is a semiconductor light-emitting device including a quantum well type light-emitting layer of a group III-V compound semiconductor in which a barrier layer and a well layer are repeatedly laminated. The barrier layer is AlGaInAs containing P 1-x P x consisting of (0 < x < 1), and the well layer is AlGaInAs 1-y P y consisting of (0 ≦ y ≦ x). The composition wavelength difference between the composition wavelength λ w of the well layer and the composition wavelength λ b of the barrier layer is 500 nm or more.

Claims

1. A semiconductor light-emitting element comprising a quantum well type light-emitting layer of a III-V compound semiconductor in which a barrier layer and a well layer are repeatedly stacked, The barrier layer is AlGaInAs １－ｘ P ｘ (0 < x < 1) The aforementioned well layer is AlGaInAs １－ｙ P ｙ It consists of (0 ≤ y ≤ x), The composition wavelength λ of the well layer ｗ and the composition wavelength λ of the barrier layer ｂ A semiconductor light-emitting element characterized by having a compositional wavelength difference of 500 nm or more.

2. In the band structure of the quantum well-type luminescent layer, the well depth (Dc) on the conduction band side is greater than the well depth (Dv) on the valence band side, and the ratio (Dc / (Dc+Dv)) of the well depth (Dc) on the conduction band side, formed by the compositional wavelength difference, to the sum of the well depths (Dc) on the conduction band side and (Dv) on the valence band side is 65% or more and 75% or less. The grid constant a of the well bed ｗ and the lattice constant a of the barrier layer ｂ The semiconductor light-emitting element according to claim 1, wherein the value obtained by dividing the absolute value of the difference between two lattice constants by the average value of the two lattice constants is 4.0% or more and 6.0% or less.

3. The semiconductor light-emitting element according to claim 1, wherein the well layer is made of AlGaInAs.

4. A method for manufacturing a semiconductor light-emitting element as described in claim 1, The process includes a light-emitting layer formation step for forming the quantum well-type light-emitting layer, A method for manufacturing a semiconductor light-emitting element, wherein the light-emitting layer formation step involves repeatedly performing a barrier layer formation step in which the barrier layer is formed using raw material gases from an Al source, a Ga source, an In source, an As source, and a P source, and a well layer formation step in which the well layer is formed with a gas phase ratio (amount of P / amount of As) that is the same as or smaller than that used during barrier layer formation, thereby forming the quantum well type light-emitting layer.

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