Optical Proximity Correction Method

Abstract

An optical proximity correction method includes: obtaining an initial layout, the initial layout including several initial graphics; performing defect detection on the initial layout to determine the defect location; forming a first defect mark at the defect location, the first defect mark including a shiftable boundary; determining a defect initial graphic, a designated initial graphic corresponding to the defect initial graphic, and a defect shift direction based on the defect location; shifting a boundary of the first defect mark perpendicular to the defect shift direction along the defect shift direction to form a second defect mark, wherein the minimum spacing between the second defect mark and the designated initial graphic is less than a preset minimum spacing between adjacent initial graphics; determining a line segment to be corrected in the defect initial graphic based on the second defect mark, and correcting the initial layout. This optical proximity correction method can improve the accuracy and efficiency of optical proximity correction.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to an optical proximity correction method. Background Art

[0002] Photolithography is a crucial technology in semiconductor manufacturing. It enables the transfer of patterns from a mask onto the surface of a silicon wafer, creating semiconductor products that meet design requirements. The photolithography process consists of an exposure step, a development step following the exposure step, and an etching step following the development step. During the exposure step, light passes through the light-transmitting areas of the mask onto a silicon wafer coated with photoresist, causing the photoresist to undergo a chemical reaction under the irradiation of light. During the development step, the different solubility of the developer in the photosensitive and unsensitive photoresists is exploited to form a photoresist pattern, enabling the transfer of the mask pattern to the photoresist. During the etching step, the silicon wafer is etched based on the photoresist pattern formed in the photoresist layer, further transferring the mask pattern to the wafer.

[0003] In semiconductor manufacturing, as design dimensions continue to shrink, approaching the limits of photolithography imaging systems, the diffraction effect of light becomes increasingly pronounced, ultimately leading to optical image degradation of the designed pattern. The actual photolithography pattern formed is severely distorted relative to the pattern on the mask, and the actual pattern formed by photolithography on the silicon wafer is ultimately different from the designed pattern. This phenomenon is called the Optical Proximity Effect (OPE).

[0004] Optical Proximity Correction (OPC) was developed to correct for the optical proximity effect. The core concept of OPC is to establish an OPC model based on the consideration of offsetting the optical proximity effect. The photomask pattern is designed based on the OPC model. This allows the photomask pattern to be closer to the target pattern desired by the user, even though the optical proximity effect may occur in the photolithography pattern relative to the mask pattern after photolithography. This offset has been taken into account when designing the photomask pattern based on the OPC model.

[0005] However, there are still many problems with optical proximity correction in the prior art. Summary of the Invention

[0006] The technical problem solved by the present invention is to provide an optical proximity correction method to improve the accuracy and efficiency of optical proximity correction.

[0007] To solve the above technical problems, the technical solution of the present invention provides an optical proximity correction method, comprising: obtaining an initial layout, wherein the initial layout includes several initial graphics; performing defect detection on the initial layout to determine the defect position; forming a first defect mark at the defect position, wherein the first defect mark includes a shiftable boundary; determining a defect initial graphic, a designated initial graphic corresponding to the defect initial graphic, and a defect offset direction according to the defect position; shifting the boundary of the first defect mark perpendicular to the defect offset direction along the defect offset direction to form a second defect mark, wherein the minimum spacing between the second defect mark and the designated initial graphic is less than the preset minimum spacing between adjacent initial graphics; determining a line segment to be corrected in the defect initial graphic according to the second defect mark, and correcting the initial layout.

[0008] Optionally, the preset minimum spacing is generated based on a boundary condition in the mask rule check.

[0009] Optionally, offsetting the boundary of the first defect mark perpendicular to the defect offset direction along the defect offset direction to form a second defect mark includes: obtaining a first boundary in the first defect mark that is perpendicular to the defect offset direction and adjacent to the specified initial graphic; and offsetting the first boundary toward the specified initial graphic in the defect offset direction until the first boundary meets a preset condition to form a second defect mark.

[0010] Optionally, the preset conditions include: a minimum distance between the first boundary and the designated initial pattern is smaller than a preset minimum distance between adjacent initial patterns; and the second defect mark does not overlap with the designated initial pattern.

[0011] Optionally, offsetting the boundary of the first defect mark perpendicular to the defect offset direction along the defect offset direction to form a second defect mark also includes: obtaining a second boundary opposite to the first boundary in the first defect mark; and offsetting the second boundary away from the specified initial pattern by a first preset distance in the defect offset direction.

[0012] Optionally, the optical proximity correction method further includes: providing a target layout, the target layout including a plurality of target graphics, each of the target graphics including a plurality of target line segments; obtaining the initial layout includes: performing a plurality of global optical proximity corrections on the target layout to obtain the initial layout, wherein the plurality of initial graphics correspond to the plurality of target graphics.

[0013] Optionally, the defect detection on the initial layout and determination of the defect position include: exposing the initial layout to form an initial exposure layout, the initial exposure layout including a number of initial exposure patterns corresponding to a number of initial patterns; comparing the initial layout with the initial exposure layout to obtain a number of edge placement errors corresponding to a number of target line segments; when any edge placement error among the number of edge placement errors corresponding to the number of target line segments exceeds a preset deviation range, determining the defect position.

[0014] Optionally, forming the first defect mark at the defect position includes: determining a corresponding first target line segment from several target line segments according to the defect position; forming a corresponding target first defect mark in the target layout, at least part of the first target line segment is within the range of the target first defect mark; and forming a corresponding first defect mark in the initial layout according to the target first defect mark.

[0015] Optionally, the method for determining the defect offset direction includes: obtaining, based on the first target line segment, a defect offset direction perpendicular to the first target line segment.

[0016] Optionally, the method for determining the defective initial graphic includes: determining a target graphic where the first target line segment is located; and determining, among a plurality of initial graphics, an initial graphic corresponding to the target graphic as the defective initial graphic.

[0017] Optionally, the method for determining the designated initial pattern includes: determining, among several initial patterns, an initial pattern that is adjacent to both the defect initial pattern and the first defect mark as the designated initial pattern.

[0018] Optionally, the correcting the initial layout includes: performing a first local optical proximity correction on the initial layout to form a first corrected layout.

[0019] Optionally, the optical proximity correction method further includes: performing a plurality of second local optical proximity corrections on the first correction layout to form a second correction layout.

[0020] Optionally, performing several second local optical proximity corrections on the first revised layout to form a second revised layout includes: using the first revised layout as an intermediate layout to be corrected, and performing exposure processing to obtain an intermediate exposure layout to be corrected; forming an intermediate revised layout based on the intermediate layout to be corrected and the intermediate exposure layout to be corrected; using the intermediate revised layout as the intermediate layout to be corrected, and continuing to perform the second local optical proximity correction until several second local optical proximity corrections are completed to obtain a second revised layout.

[0021] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:

[0022] The optical proximity correction method provided by the technical solution of the present invention includes performing defect detection on an initial layout to determine a defect location; forming a first defect mark at the defect location, the first defect mark including a shiftable boundary; determining a defect initial pattern, a designated initial pattern corresponding to the defect initial pattern, and a defect shift direction based on the defect location; shifting a boundary of the first defect mark perpendicular to the defect shift direction along the defect shift direction to form a second defect mark, wherein the minimum spacing between the second defect mark and the designated initial pattern is less than a preset minimum spacing between adjacent initial patterns; determining a line segment to be corrected in the defect initial pattern based on the second defect mark, and correcting the initial layout. The preset minimum spacing between adjacent initial patterns is used to limit the spacing between adjacent initial patterns to be greater than the preset minimum spacing. Therefore, the second defect mark easily contacts the contour of the defect initial pattern adjacent to the designated initial pattern, thereby reducing the number of line segments to be corrected in the contour of the designated initial pattern that actually need to be corrected but cannot be determined, improving the accuracy of obtaining the line segments to be corrected, and thereby improving the accuracy and efficiency of optical proximity correction. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 is a flow chart of an optical proximity correction method according to an embodiment of the present invention;

[0024] Figures 2 to 9 FIG. 1 is a structural diagram of each step of an optical proximity correction method according to an embodiment of the present invention. DETAILED DESCRIPTION

[0025] As described in the background art, there are still many problems with optical proximity correction in the prior art, which will be described in detail below with reference to an embodiment.

[0026] In an optical proximity correction method, the following steps are included: step S11, providing a target layout including several target graphics; step S12, performing several global optical proximity corrections on the target layout to form an initial layout, wherein the initial layout includes several initial graphics corresponding to the several target graphics; step S13, performing several local optical proximity corrections on the initial layout.

[0027] In step S13, several local optical proximity corrections are performed on the initial layout, including:

[0028] Step S13a, using the initial layout as the layout to be revised;

[0029] Step S13b, detecting a number of defects in the layout to be corrected;

[0030] Step S13c, forming corresponding defect marks according to the defects;

[0031] Step S13d, obtaining corresponding line segments to be corrected in the layout to be corrected according to the defect marks;

[0032] Step S13e, offsetting a number of line segments to be corrected to form an intermediate corrected layout;

[0033] Step S13f: Using the intermediate corrected layout as the layout to be corrected, and continuing to perform local optical proximity correction until several local optical proximity corrections are completed to obtain a corrected layout.

[0034] However, with the development of semiconductor manufacturing technology, semiconductor structures with smaller sizes and more complex structures need to be formed at advanced nodes. Therefore, in the initial layout formed, the sizes of some initial graphics are getting smaller and smaller, and the shapes are getting more and more complex. As a result, during the initial local optical proximity correction, the defect marks formed cannot contact the outline of the graphics in the layout to be corrected, resulting in the inability to obtain the line segments to be corrected that actually need to be corrected, resulting in poor accuracy and efficiency of optical proximity correction.

[0035] In order to solve the above technical problems, the technical solution of the present invention provides an optical proximity correction method, which is achieved by: performing defect detection on the initial layout to determine the defect position; forming a first defect mark at the defect position, wherein the first defect mark includes a shiftable boundary; determining the defect initial figure, the designated initial figure corresponding to the defect initial figure, and the defect offset direction according to the defect position; shifting the boundary of the first defect mark perpendicular to the defect offset direction along the defect offset direction to form a second defect mark, wherein the minimum spacing between the second defect mark and the designated initial figure is less than the preset minimum spacing between adjacent initial figures, so that the minimum spacing between the second defect mark and the designated initial figure is less than the preset minimum spacing between adjacent initial figures, thereby improving the accuracy and efficiency of optical proximity correction.

[0036] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0037] Figure 1 FIG. 4 is a flow chart of an optical proximity correction method according to an embodiment of the present invention.

[0038] Please refer to Figure 5 , the optical proximity correction method includes the following steps:

[0039] Step S100, providing a target layout, wherein the target layout includes a plurality of target graphics;

[0040] Step S200, obtaining an initial layout, wherein the initial layout includes a plurality of initial graphics;

[0041] Step S300, performing defect detection on the initial layout to determine the defect location;

[0042] Step S400: forming a first defect mark at the defect location, wherein the first defect mark includes a deflectable boundary;

[0043] Step S500, determining a defect initial pattern, a designated initial pattern corresponding to the defect initial pattern, and a defect offset direction according to the defect position;

[0044] Step S600: shifting a boundary of the first defect mark perpendicular to the defect offset direction along the defect offset direction to form a second defect mark, wherein a minimum distance between the second defect mark and the designated initial pattern is smaller than a preset minimum distance between adjacent initial patterns;

[0045] Step S700, determining a line segment to be corrected in the initial defect pattern according to the second defect mark;

[0046] Step S800: Modify the initial layout.

[0047] The following is a detailed description with reference to the accompanying drawings.

[0048] Figures 2 to 9 FIG. 1 is a structural diagram of each step of an optical proximity correction method according to an embodiment of the present invention.

[0049] Please refer to Figure 2 , providing a target layout 100 , wherein the target layout 100 includes a plurality of target graphics 110 .

[0050] The target pattern 110 is an ideal pattern (i.e., one without an optical proximity effect). However, due to the optical proximity effect, light interference and diffraction occur during the actual exposure process. Consequently, the pattern obtained after the exposure process differs from the target pattern 110. For example, if the target pattern 110 is a regular rectangle, the pattern obtained after the exposure process may resemble an ellipse. The shapes of the target patterns 110 may be rectangular, square, polygonal, circular, and so on.

[0051] For ease of explanation, Figure 2 Schematically showing several rectangular target graphics 110 as an example for explanation.

[0052] In this embodiment, each target graphic 110 includes a plurality of target line segments 111 .

[0053] Specifically, a preset window may be provided, and the contours of the target graphics 110 may be segmented using the preset window to form the target line segments 111 .

[0054] Please refer to Figure 3 , obtaining an initial layout 200 , wherein the initial layout 200 includes a plurality of initial graphics 210 .

[0055] The initial graphics 210 correspond to the target graphics 110 .

[0056] In this embodiment, the method for obtaining the initial layout 200 includes: performing global optical proximity correction on the target layout 100 several times to obtain the initial layout 200 .

[0057] In this embodiment, the method for performing several global optical proximity corrections on the target layout 100 to form the initial layout 200 includes: using the target layout 100 as the target layout to be corrected, and performing exposure processing to obtain an intermediate target exposure layout (not shown); performing global correction processing on the target layout to be corrected according to a preset model, the target layout 100, and the intermediate target exposure layout to generate an intermediate target layout (not shown); using the intermediate target layout as the target layout to be corrected until several global optical proximity corrections are completed to obtain the initial layout 200.

[0058] In this embodiment, the exposure processing performed by the global optical proximity correction is global (i.e., for the entire target layout 100). Compared to local optical proximity correction (e.g., the first and second local optical proximity corrections), the global optical proximity correction uses a more complex preset model and has more restrictions on the defect types and boundary conditions. The first and second local optical proximity corrections are performed to correct edge placement error defects (EPEs) in the initial layout 200.

[0059] Next, defect detection is performed on the initial layout 200 to determine the defect locations.

[0060] For the specific steps of performing defect detection on the initial layout 200 and determining the defect location, please refer to Figures 4 and 5 .

[0061] Please refer to Figure 4 , the initial layout 200 is exposed to form an initial exposure layout 300.

[0062] The initial exposure layout 300 includes: a plurality of initial exposure patterns 310 corresponding to the plurality of initial patterns 210 .

[0063] Please refer to Figure 5 , comparing the initial layout 200 and the initial exposure layout 310, obtaining a plurality of edge placement errors EPEt corresponding to a plurality of target line segments 111; when any edge placement error EPEt exceeds a preset deviation range, determining a defect position (not shown).

[0064] It should be understood that since several edge placement errors EPEt correspond to several target line segments 111, the detected defect position not only corresponds to the edge placement error EPEt that exceeds the preset deviation range, but also corresponds to the target line segment 111 corresponding to the edge placement error EPEt that exceeds the preset deviation range.

[0065] It should be noted that, for ease of understanding and explanation, Figure 5 Schematically, the outline of a portion of the target graphic 110 is shown by a dotted line.

[0066] Please refer to Figure 6 A first defect mark 220 is formed at the defect position, and the first defect mark 220 includes a deflectable boundary (not marked in the figure).

[0067] Specifically, the deflectable boundaries are the first boundary and the second boundary to be described later.

[0068] In this embodiment, the method for forming the first defect mark 220 at the defect position includes: determining a corresponding first target line segment 111a from a plurality of target line segments 111 according to the defect position; forming a corresponding target first defect mark (not marked in the figure) in the target layout 100, at least part of the first target line segment 111a is within the range of the target first defect mark; and forming a corresponding first defect mark 220 in the initial layout 200 according to the target first defect mark.

[0069] For ease of understanding and explanation, Figure 6 The first target line segment 111 a is schematically indicated by a dotted line.

[0070] Preferably, the boundary of the first defect mark 220 is a square with a preset side length.

[0071] Preferably, the preset side length is 1 nanometer.

[0072] Please continue to refer to Figure 6According to the defect position, the defect initial pattern 210a, the designated initial pattern 210b corresponding to the defect initial pattern 210a, and the defect offset direction X are determined.

[0073] In this embodiment, the method for determining the defective initial graphic 210a includes: determining the target graphic 110 where the first target line segment 111a is located; and determining, among several initial graphics 210, the initial graphic 210 corresponding to the target graphic 110 as the defective initial graphic 210a.

[0074] In this embodiment, the method for determining the designated initial pattern 210 b includes: determining, among a plurality of initial patterns 210 , an initial pattern 210 adjacent to both the defect initial pattern 210 a and the first defect mark 220 as the designated initial pattern 210 b .

[0075] In this embodiment, the method for determining the defect offset direction X includes: obtaining the defect offset direction X perpendicular to the first target line segment 111 a according to the first target line segment 111 a .

[0076] That is, the defect offset direction is perpendicular to the corresponding target line segment 111 .

[0077] For ease of understanding and explanation, Figure 6 In FIG, the target graphic 110 where the first target line segment 111 a is located is schematically indicated by a dotted line.

[0078] Please refer to Figure 7 , the boundary of the first defect mark 220 perpendicular to the defect offset direction X is offset along the defect offset direction X to form a second defect mark 230, and the minimum distance D1 between the second defect mark 230 and the specified initial pattern 210b is less than the preset minimum distance between adjacent initial patterns 210.

[0079] The preset minimum distance between adjacent initial graphics 210 is used to limit the distance between adjacent initial graphics 210 to be greater than the preset minimum distance.

[0080] Specifically, the minimum distance D2 between the defect initial pattern 210a and the designated initial pattern 210b must be greater than or equal to the predetermined minimum distance. Therefore, among the line segments in the defect initial pattern 210a that actually need to be corrected, those that are offset away from the corresponding target pattern 110 can be contacted by the second defect marker 230 (i.e., partially located within the range of the second defect marker 230). This reduces the number of line segments that actually need to be corrected but cannot be identified, improving the accuracy of obtaining the line segments to be corrected.

[0081] In this embodiment, the preset minimum spacing between adjacent initial patterns 210 is generated based on the boundary conditions in the mask rule check (MRC). Thus, the preset minimum spacing can be obtained based on existing models and data, which improves convenience and efficiency.

[0082] In this embodiment, the method for forming the second defect mark 230 includes: obtaining a first boundary 221 in the first defect mark 220 that is perpendicular to the defect offset direction X and adjacent to the specified initial figure 210b; and offsetting the first boundary 221 toward the specified initial figure 210b in the defect offset direction X until the first boundary 221 meets a preset condition.

[0083] Specifically, the method for obtaining the first boundary 221 includes: taking a boundary of the first defect mark 220 that is perpendicular to the defect offset direction X and corresponds to an outer area of ​​the target pattern 110 as the first boundary 221 .

[0084] In this embodiment, the preset conditions include: the minimum distance D1 between the first boundary 221 and the specified initial pattern 210b is smaller than the preset minimum distance between adjacent initial patterns 210; and the second defect mark 230 does not overlap with the specified initial pattern 210b.

[0085] Compared with the method of retrieving a large amount of relevant data of the target layout 100 and the initial layout 200 and performing complex screening and comparison to determine the distance between the outline of the target graphic 110 and the outline of the defective initial graphic 210a, and then obtaining the distance that the first boundary 221 needs to be offset to ensure that the second defect mark that can contact the line segment to be corrected is formed, in this embodiment, since the second defect mark 220 is formed by judging whether the preset conditions are met, it is possible to greatly reduce the data processing amount of the device during optical proximity correction, thereby better improving the efficiency of optical proximity correction.

[0086] In addition, since the preset condition includes that the second defect mark 230 does not overlap with the designated initial pattern 210b, the risk of the second defect mark 230 mistakenly contacting a line segment not to be corrected is reduced, thereby improving the accuracy of optical proximity correction.

[0087] In this embodiment, the method for forming the second defect mark 230 further includes: obtaining a second boundary 222 opposite to the first boundary 221 in the first defect mark 220; and offsetting the second boundary 222 away from the specified initial pattern 210b in the defect offset direction X by a first preset distance.

[0088] Therefore, among the line segments to be corrected in the defect initial pattern 210a that actually need to be corrected, the line segments to be corrected that are offset toward the corresponding target pattern 110 can also be contacted by the second defect marker 230 to accurately identify the line segments to be corrected.

[0089] Typically, in practical applications, the first preset distance (i.e., the offset distance of the second boundary 222) can be accurately estimated through experience to ensure that the formed second defect mark 230 can contact the line segment to be corrected formed by offsetting toward the corresponding target pattern 110 while not contacting the line segment not to be corrected.

[0090] Preferably, the first preset distance is 20 nanometers.

[0091] It should be noted that, for ease of understanding, Figure 7 The first boundary 221 and the second boundary 222 are indicated by dotted lines.

[0092] Please refer to Figure 8 , according to the second defect mark 230 , determine the line segment 211 a to be corrected in the defect initial graph 210 a .

[0093] Because the line segments to be corrected in the initial defect pattern 210a that are offset away from the corresponding target pattern 110 can be contacted by the second defect marker 230 (i.e., partially located within the range of the second defect marker 230), the number of line segments to be corrected 211a that actually need to be corrected but cannot be identified is reduced, thereby improving the accuracy of obtaining the line segments to be corrected. This can improve the accuracy and iterative response speed of subsequent local optical proximity corrections (including the first local optical proximity correction and the second local optical proximity correction), thereby enhancing the accuracy and efficiency of optical proximity correction.

[0094] In this embodiment, according to the second defect mark 230, the method for obtaining the corresponding line segment 211a to be corrected in the outline of the defect initial figure 210a includes: segmenting the outline of the defect initial figure 210a to form a plurality of defect initial line segments 211; according to the second defect mark 230, obtaining the line segment 211a to be corrected from the plurality of defect initial line segments 211, wherein part or all of the line segment 211a to be corrected is located within the range of the second defect mark 230.

[0095] Please refer to Figure 9 , performing a first local optical proximity correction on the initial layout 200 to form a first corrected layout 400 .

[0096] Specifically, the method for forming the first revised layout 400 includes: offsetting a plurality of the line segments 211 a to be corrected according to a plurality of edge placement errors EPEt corresponding to the plurality of line segments 211 a to be corrected, to form the first revised layout 400 .

[0097] In this embodiment, after forming the first revised layout 400 , the optical proximity correction method further includes: performing a plurality of second local optical proximity corrections on the first revised layout 400 to form a second revised layout (not shown).

[0098] In this embodiment, the method for forming the second revised layout includes: using the first revised layout as an intermediate layout to be revised (not shown) and performing exposure processing to obtain an intermediate exposure layout to be revised (not shown); forming an intermediate revised layout (not shown) based on the intermediate layout to be revised and the intermediate exposure layout to be revised; using the intermediate revised layout as the intermediate layout to be revised, and continuing to perform a second local optical proximity correction until several second local optical proximity corrections are completed to obtain a second revised layout (not shown).

[0099] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. An optical proximity correction method, characterized in that: include: Acquire an initial layout, wherein the initial layout includes a plurality of initial graphics; Performing defect detection on the initial layout to determine defect locations; forming a first defect mark at the defect location, wherein the first defect mark includes a deflectable boundary; Determining, according to the defect position, an initial defect pattern, a designated initial pattern corresponding to the initial defect pattern, and a defect offset direction; offsetting a boundary of the first defect mark perpendicular to the defect offset direction along the defect offset direction to form a second defect mark, wherein a minimum distance between the second defect mark and the designated initial pattern is smaller than a preset minimum distance between adjacent initial patterns; According to the second defect mark, a line segment to be corrected in the defective initial pattern is determined, and the initial layout is corrected.

2. The optical proximity correction method according to claim 1, wherein: The preset minimum spacing is generated based on a boundary condition in a mask rule check.

3. The optical proximity correction method according to claim 1, wherein: The step of shifting a boundary of the first defect mark perpendicular to the defect shift direction along the defect shift direction to form a second defect mark includes: Acquire a first boundary in the first defect mark that is perpendicular to the defect offset direction and adjacent to the designated initial pattern; In the defect offset direction, the first boundary is offset toward the designated initial pattern until the first boundary meets a preset condition, thereby forming a second defect mark.

4. The optical proximity correction method according to claim 3, wherein: The preset conditions include: a minimum distance between the first boundary and the designated initial pattern is smaller than a preset minimum distance between adjacent initial patterns; and the second defect mark does not overlap with the designated initial pattern.

5. The optical proximity correction method according to claim 3, wherein: The step of shifting a boundary of the first defect mark perpendicular to the defect shift direction along the defect shift direction to form a second defect mark further includes: Acquire a second boundary opposite to the first boundary in the first defect mark; In the defect offset direction, the second boundary is offset away from the designated initial pattern by a first preset distance.

6. The optical proximity correction method according to claim 1, wherein: The optical proximity correction method further includes: providing a target layout, wherein the target layout includes a plurality of target graphics, and each of the target graphics includes a plurality of target line segments; The obtaining of the initial layout includes: performing a plurality of global optical proximity corrections on the target layout to obtain the initial layout, wherein the plurality of initial graphics correspond to the plurality of target graphics.

7. The optical proximity correction method according to claim 6, wherein: The performing defect detection on the initial layout to determine the defect location includes: performing an exposure process on the initial layout to form an initial exposure layout, wherein the initial exposure layout includes a plurality of initial exposure patterns corresponding to the plurality of initial patterns; Comparing the initial layout with the initial exposure layout to obtain a plurality of edge placement errors corresponding to a plurality of target line segments; When any edge placement error among a plurality of edge placement errors corresponding to a plurality of target line segments exceeds a preset deviation range, a defect position is determined.

8. The optical proximity correction method according to claim 6, wherein: The forming a first defect mark at the defect position includes: Determining a corresponding first target line segment from the plurality of target line segments according to the defect position; forming a corresponding target first defect mark in the target layout, wherein at least part of the first target line segment is within the range of the target first defect mark; According to the target first defect mark, a corresponding first defect mark is formed in the initial layout.

9. The optical proximity correction method according to claim 8, wherein: The method for determining the defect offset direction includes: According to the first target line segment, a defect offset direction perpendicular to the first target line segment is acquired.

10. The optical proximity correction method according to claim 8, wherein: The method for determining the initial defect pattern includes: determining a target graphic where the first target line segment is located; An initial pattern corresponding to the target pattern is determined as a defective initial pattern among a plurality of initial patterns.

11. The optical proximity correction method according to claim 1, wherein: The method for determining the designated initial pattern includes: determining, among a plurality of initial patterns, an initial pattern adjacent to both the defect initial pattern and the first defect mark as the designated initial pattern.

12. The optical proximity correction method according to claim 1, wherein: The correcting of the initial layout includes: performing a first local optical proximity correction on the initial layout to form a first corrected layout.

13. The optical proximity correction method according to claim 12, wherein: The optical proximity correction method further includes: performing a plurality of second local optical proximity corrections on the first correction layout to form a second correction layout.

14. The optical proximity correction method according to claim 13, wherein: The step of performing a plurality of second local optical proximity corrections on the first revised layout to form a second revised layout includes: Using the first revised layout as an intermediate layout to be revised, and performing exposure processing to obtain an intermediate exposure layout to be revised; An intermediate corrected layout is formed based on the intermediate layout to be corrected and the intermediate exposure layout to be corrected. The intermediate corrected layout is used as the intermediate layout to be corrected, and a second local optical proximity correction is continued until several second local optical proximity corrections are completed to obtain a second corrected layout.

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