A heterostructure and a method for manufacturing the same

Abstract

The application discloses a heterostructure preparation method, comprising the following steps: providing a single-crystal functional material substrate and a hetero-substrate substrate; performing first ion implantation on the single-crystal functional material substrate to form a first defect layer, and the single-crystal functional material substrate with the first defect layer is in a warped state; performing a warping regulation treatment on the hetero-substrate substrate to form a warping regulation layer, and the hetero-substrate substrate with the warping regulation layer is in a warped state; bonding the single-crystal functional material substrate with the first defect layer and the hetero-substrate substrate with the warping regulation layer to obtain a hetero-bonding body; and peeling the hetero-bonding body to obtain a target heterostructure. The heterostructure preparation method disclosed by the application warps the hetero-substrate substrate and the single-crystal functional material substrate to reduce the bonding gap between the hetero-substrate substrate and the single-crystal functional material substrate, thereby enhancing the diffusion capacity of the bonding wave and the bonding strength.

Description

Technical Field

[0001] This invention relates to the field of heterogeneous integration technology, and in particular to a heterogeneous structure and its preparation method. Background Technology

[0002] In the field of heterogeneous integration, multi-material heterogeneous integration of semiconductor materials with single functions is used to form heterojunctions or heterostructures with multiple functions, resulting in high-performance devices with higher power, higher frequency, or higher speed. This is an important development direction for heterogeneous integration technology at present and will open up a new path for the future development of microelectronics technology.

[0003] Ion-implanted smart lift-off heterogeneous integration technology can peel off high-quality single-crystal thin films from any single-crystal wafer through ion implantation and combine them with a heterogeneous substrate wafer through bonding. However, because ion implantation causes wafer warping, there will be a large gap between the ion-implanted wafer and the substrate wafer during the bonding process, which makes it difficult for the bonding wave to diffuse and results in low bonding strength. Summary of the Invention

[0004] This application provides a method for fabricating a heterostructure, which reduces the bonding gap between the heterostructure substrate and the single-crystal functional material substrate by warping both the heterostructure substrate and the single-crystal functional material substrate, thereby enhancing the diffusion ability of the bonding wave and thus enhancing the bonding strength.

[0005] On the one hand, this application provides a method for preparing a heterostructure, comprising:

[0006] We provide single-crystal functional material substrates and heterostructure substrates;

[0007] The single-crystal functional material substrate is subjected to a first ion implantation to form a first defect layer, and the single-crystal functional material substrate with the first defect layer is in a warped state.

[0008] The heterogeneous substrate is subjected to warpage control treatment to form a warpage control layer, and the heterogeneous substrate with the warpage control layer is in a warped state.

[0009] A single-crystal functional material substrate forming the first defect layer and a heterogeneous substrate forming the warp control layer are bonded together to obtain a heterogeneous bond;

[0010] The heterobonded composite is stripped to obtain the target heterostructure.

[0011] Furthermore, the difference in warpage state between the heterogeneous substrate forming the warpage control layer and the single-crystal functional material substrate forming the first defect layer satisfies a preset difference condition. 。

[0012] Furthermore, the warp control treatment of the heterogeneous substrate to form a warp control layer includes:

[0013] Acquire warpage state data of the single-crystal functional material substrate forming the first defect layer;

[0014] The heterogeneous substrate is subjected to warpage control treatment, and the warpage state data of the heterogeneous substrate is monitored during the warpage control treatment.

[0015] Using the warpage state data of the single-crystal functional material substrate forming the first defect layer as the warpage state target, the warpage processing condition parameters of the heterogeneous substrate are adjusted until the warpage state difference between the heterogeneous substrate and the single-crystal functional material substrate forming the first defect layer meets the preset difference condition, thereby forming the warpage control layer.

[0016] Furthermore, the heterogeneous substrate includes a first surface and a second surface disposed opposite to each other, the first surface being used for bonding to the single-crystal functional material substrate forming the first defect layer; the warpage control layer is prepared using the following method:

[0017] A second ion implantation is performed on the second surface of the heterogeneous substrate to form a second defect layer as the warpage control layer.

[0018] Furthermore, the heterogeneous substrate includes a first surface and a second surface disposed opposite to each other, the first surface being used for bonding to the single-crystal functional material substrate forming the first defect layer; the warpage control layer is prepared using the following method:

[0019] The first surface of the heterogeneous substrate is subjected to dielectric deposition to form a stress-regulating dielectric layer as the warpage control layer;

[0020] The dielectric material deposited in the dielectric deposition process can undergo thermal mismatch with the heterogeneous substrate.

[0021] Furthermore, the coefficient of thermal expansion of the medium deposited in the dielectric deposition process is different from that of the heterogeneous substrate.

[0022] Furthermore, the implanted ions in the first ion implantation include at least one of hydrogen ions and rare gas ions.

[0023] Furthermore, the implanted ions in the second ion implantation include one or more of hydrogen ions, rare gas ions, nitrogen ions, phosphorus ions, oxygen ions, and boron ions.

[0024] Furthermore, the single-crystal functional material substrate is a silicon substrate, an indium phosphide substrate, a gallium arsenide substrate, a gallium nitride substrate, a silicon carbide substrate, a gallium oxide substrate, or a diamond substrate.

[0025] Furthermore, the heterogeneous substrate is a silicon carbide substrate, a diamond substrate, a barium sulfide substrate, or a silicon substrate.

[0026] Furthermore, during the first ion implantation process, the preparation method satisfies at least one of the following characteristics:

[0027] The energy range for injecting the first ion is 50 keV-10 meV;

[0028] The dose of the first ion injected was 1 × 10⁻⁶. 16 / cm 2 -1×10 18 / cm 2 ;

[0029] The temperature at which the first ion was injected was -20℃ to 200℃.

[0030] Furthermore, during the second ion implantation process, the preparation method satisfies at least one of the following characteristics:

[0031] The energy range for injecting the second ion is 50 keV-10 meV;

[0032] The dose of the second ion injected was 1 × 10⁻⁶. 13 / cm 2 -1×10 18 / cm 2 ;

[0033] The temperature at which the second ion is injected is -20℃ to 200℃.

[0034] Furthermore, the medium deposited in the medium deposition process is one or more of the following: alumina medium, silicon dioxide medium, aluminum nitride medium, silicon nitride medium, or hafnium dioxide medium.

[0035] Furthermore, during the media deposition process, the preparation method satisfies at least one of the following characteristics:

[0036] The medium deposition temperature is 200℃-500℃;

[0037] The dielectric deposition thickness is 2nm-500nm.

[0038] Furthermore, the target heterostructure has a functional material thin film layer with a thickness of 30nm-20000nm.

[0039] Furthermore, the warpage difference refers to the difference in warpage between the heterogeneous substrate forming the warpage control layer and the single-crystal functional material substrate forming the first defect layer.

[0040] The condition for satisfying the preset difference is that the warpage difference is less than or equal to a preset value, and the preset value is 45μm-50μm.

[0041] On the other hand, this application provides a heterostructure, which is prepared by the heterostructure preparation method described above.

[0042] The method for preparing heterostructures provided in this application has the following beneficial effects:

[0043] The heterostructure fabrication method of this application includes providing a single-crystal functional material substrate and a heterostructure substrate; performing a first ion implantation on the single-crystal functional material substrate to form a first defect layer, thereby creating a warped state in the single-crystal functional material substrate with the first defect layer; performing a warp control treatment on the heterostructure substrate to form a warp control layer, thereby creating a warped state in the heterostructure substrate with the warp control layer; bonding the single-crystal functional material substrate with the first defect layer and the heterostructure substrate with the warp control layer to obtain a heterostructure bond; and peeling off the heterostructure bond to obtain the target heterostructure. The heterostructure fabrication method of this application, by forming a first defect layer in the single-crystal functional material substrate and a warp control layer in the heterostructure substrate, causes both the heterostructure substrate and the single-crystal functional material substrate to warp, thereby reducing the bonding gap between the heterostructure substrate and the single-crystal functional material substrate, thereby enhancing the diffusion capability of the bonding wave and thus enhancing the bonding strength. Attached Figure Description

[0044] To more clearly illustrate the technical solutions and advantages in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0045] Figure 1 A schematic flowchart illustrating a method for preparing a heterostructure provided in this application embodiment;

[0046] Figure 2 A schematic diagram of a process for forming a warp control layer is provided in an embodiment of this application;

[0047] Figure 3 This is a schematic diagram illustrating a specific process for preparing a heterostructure according to an embodiment of this application.

[0048] Figure 4A schematic diagram illustrating the specific process of another method for preparing heterostructures provided in this application embodiment;

[0049] Figure 5 This is a schematic diagram of the structure of a single-crystal functional material substrate provided in an embodiment of this application;

[0050] Figure 6 This is a schematic diagram of the structure of a heterogeneous substrate provided in an embodiment of this application;

[0051] Figure 7 A schematic diagram of the structure of a single-crystal functional material substrate forming a first defect layer is provided in an embodiment of this application;

[0052] Figure 8 This is a schematic diagram of a heterogeneous substrate for forming a second defect layer, provided in an embodiment of this application.

[0053] Figure 9 A schematic diagram of a heterobonded structure provided in an embodiment of this application;

[0054] Figure 10 This is a schematic diagram of a target heterostructure provided in an embodiment of this application;

[0055] Figure 11 A schematic diagram of a heterogeneous substrate for forming a stress-modulated dielectric layer is provided in an embodiment of this application;

[0056] Figure 12 This is a schematic diagram of another heterogeneous bond provided in an embodiment of this application;

[0057] Figure 13 This is a schematic diagram of another target heterostructure provided in an embodiment of this application.

[0058] The following is supplementary explanation of the attached figures:

[0059] 1-Single crystal functional material substrate; 2-Heterogeneous substrate; 21-First side; 22-Second side; 10-Single crystal functional material substrate layer; 101-Functional material thin film layer; 20-Heterogeneous substrate layer; 201-Heterogeneous substrate layer; 30-First defect layer; 40-Second defect layer; 50-Stress modulation medium layer. Detailed Implementation

[0060] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0061] For the terms defined below, unless a different definition is given elsewhere in the claims or this specification, these definitions shall apply. All numerical values, whether explicitly indicated or not, are defined herein as being modified by the term "about." The term "about" generally refers to a range of numerical values ​​that a person skilled in the art would consider equivalent to the stated values ​​to produce substantially the same properties, functions, results, etc. A range of numerical values ​​indicated by a low value and a high value is defined as including all numerical values ​​included within that range and all subranges included within that range.

[0062] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion.

[0063] The following describes the method for preparing heterostructures provided in the embodiments of this application. Please refer to [link / reference]. Figure 1-4 , Figure 1-4 This is a flowchart illustrating a method for preparing heterostructures. This specification provides the operational steps of the methods described in the embodiments or flowcharts, but based on conventional or non-inventive methods, more or fewer operational steps may be included. The order of steps listed in the embodiments is merely one possible execution order among many and does not represent the only possible execution order. In actual implementation of the preparation method, it can be executed in the order shown in the embodiments or drawings, or in parallel. The heterostructure preparation method provided in this application includes:

[0064] S101. Provide a single-crystal functional material substrate 1 and a heterogeneous substrate 2.

[0065] In some embodiments, please refer to Figure 5 The single-crystal functional material substrate 1 can be a silicon substrate, an indium phosphide substrate, a gallium arsenide substrate, a gallium nitride substrate, a silicon carbide substrate, a gallium oxide substrate, or a diamond substrate; for example, the single-crystal functional material substrate 1 can be a 2-12 inch wafer.

[0066] In some embodiments, please refer to Figure 6 The heterogeneous substrate 2 can be a silicon carbide substrate, a diamond substrate, a barium sulfide substrate, or a silicon substrate; for example, the heterogeneous substrate 2 can be a 2-12 inch wafer.

[0067] It should be noted that the single-crystal functional material substrate 1 and the heterogeneous substrate 2 are made of different materials.

[0068] S102. Please see Figure 7 A first ion implantation is performed on the single-crystal functional material substrate 1 to form a first defect layer 30, and the single-crystal functional material substrate 1 with the first defect layer 30 exhibits a warped state.

[0069] In some embodiments, the single-crystal functional material substrate 1 has a bonding surface for bonding with the heterogeneous substrate 2; first ions are implanted into the bonding surface of the single-crystal functional material substrate 1 to form a first defect layer 30, see [link to relevant documentation]. Figure 7 , Figure 7 The arrow in the image indicates the direction of the first ion implantation.

[0070] Specifically, due to the implantation of the first ion, the single-crystal functional material substrate 1 can warp, and the single-crystal functional material substrate 1 forming the first defect layer 30 exhibits a warped state.

[0071] In some embodiments, the implanted ions for the first ion implantation include at least one of hydrogen ions and rare gas ions; thus, the effectiveness of the first ion implantation and the stripping effect of the first defect layer 30 during the annealing process can be guaranteed.

[0072] In some embodiments, the conditions for the first ion implantation include: the energy of the first ion beam forming the first defect layer 30 can be 50 keV-10000 keV, and the dose of the implanted first ions can be 1 × 10⁻⁶. 16 / cm 2 -1×10 18 / cm 2 The temperature for implanting the first ion is -20℃ to 200℃; in this way, the effect of the first ion implantation and the peeling effect of the first defect layer 30 during the annealing process can be guaranteed.

[0073] The upper limit of the first ion beam energy can be 10000 keV, 9800 keV, 9700 keV, etc., and the lower limit of the first ion beam energy can be 50 keV, 60 keV, 70 keV, etc. It is understood that the first ion beam energy can be any value within the above range, and will not be enumerated here.

[0074] The upper limit of the temperature for injecting the first ion can be 200℃, 190℃, 180℃, etc., and the lower limit of the temperature for injecting the first ion can be -20℃, -15℃, -10℃, etc. It can be understood that the temperature for injecting the first ion can be any value within the above range, and will not be enumerated here.

[0075] The greater the relative atomic mass of the first injected ion, the greater the ion beam energy required for injection.

[0076] Specifically, by controlling the energy and dose of the first ion beam during the first ion implantation process, the first defect layer 30 can be stripped during the annealing process.

[0077] S103. Please see Figure 8 and Figure 11 The heterogeneous substrate 2 is subjected to warping control treatment to form a warping control layer, and the heterogeneous substrate 2 with the warping control layer is in a warped state.

[0078] In this embodiment of the application, S103 includes:

[0079] S201. Obtain warpage state data of the single-crystal functional material substrate 1 on which the first defect layer 30 is formed.

[0080] In some embodiments, warpage state data of the single-crystal functional material substrate 1 forming the first defect layer 30 is detected using a warpage detection device; wherein, the warpage state data includes the degree of warpage.

[0081] S202. Perform warpage control treatment on the heterogeneous substrate 2, and monitor the warpage state data of the heterogeneous substrate 2 during the warpage control treatment process.

[0082] In some embodiments, during the warpage control process of the heterogeneous substrate 2, warpage state data of the heterogeneous substrate 2 can be continuously acquired based on a preset time interval.

[0083] The method for obtaining the warpage state data of the heterogeneous substrate 2 can be the same as the method for obtaining the warpage state data of the single-crystal functional material substrate 1 that forms the first defect layer 30, that is, based on the warpage detection device, the current warpage state data of the heterogeneous substrate 2 is detected.

[0084] The current warp status data includes the current degree of warp.

[0085] S203. Using the warp state data of the single-crystal functional material substrate 1 that forms the first defect layer 30 as the warp state target, adjust the warp processing condition parameters of the heterogeneous substrate 2 until the warp state difference between the heterogeneous substrate 2 and the single-crystal functional material substrate 1 that forms the first defect layer 30 meets the preset difference condition, and form a warp control layer.

[0086] Thus, by using the warp state data of the single-crystal functional material substrate 1 as the warp state target, monitoring and controlling the warp state of the heterostructure substrate 2 can improve the efficiency of warp control of the heterostructure substrate 2, thereby improving the fabrication efficiency of the heterostructure.

[0087] In some embodiments, the warpage of the heterogeneous substrate 2 can be controlled by adjusting the warpage processing condition parameters, that is, the warpage state data of the heterogeneous substrate 2 can be changed.

[0088] In some embodiments, the warp state difference refers to the warp degree difference between the heterogeneous substrate 2 forming the warp control layer and the single crystal functional material substrate 1 forming the first defect layer 30; the preset difference condition is that the warp degree difference is less than or equal to a preset value.

[0089] The preset value can be 45μm-50μm.

[0090] In some specific embodiments, during the warpage control process of the heterogeneous substrate 2, the warpage of the single-crystal functional material substrate 1 forming the first defect layer 30 is taken as the target warpage state. By adjusting the warpage processing condition parameters of the heterogeneous substrate 2, the warpage of the heterogeneous substrate 2 is changed so that the difference between the warpage of the heterogeneous substrate 2 and the warpage of the single-crystal functional material substrate 1 forming the first defect layer 30 is less than or equal to a preset value. In this way, not only can the bonding area be increased, the diffusion ability of the bonding wave be enhanced, and the bonding strength be increased, but the bonding difficulty and cost can also be reduced to a certain extent.

[0091] In some embodiments, the warp difference can indicate the bonding gap between the heterogeneous substrate 2 forming the warp control layer and the single-crystal functional material substrate 1 forming the first defect layer 30. Specifically, the larger the absolute value of the warp difference, the larger the bonding gap between the heterogeneous substrate 2 forming the warp control layer and the single-crystal functional material substrate 1 forming the first defect layer 30. Correspondingly, the smaller the absolute value of the warp difference, the smaller the bonding gap between the heterogeneous substrate 2 forming the warp control layer and the single-crystal functional material substrate 1 forming the first defect layer 30.

[0092] In this embodiment of the application, please refer to Figure 6 and Figure 8 The heterogeneous substrate 2 includes a first surface 21 and a second surface 22 disposed opposite to each other. The first surface 21 is used to bond with the single crystal functional material substrate 1 forming the first defect layer 30. The warpage control layer is prepared by performing a second ion implantation on the second surface 22 of the heterogeneous substrate 2 to form a second defect layer 40 as the warpage control layer.

[0093] In some embodiments, please refer to Figure 8 Second ions are implanted into the second surface 22 of the heterogeneous substrate 2 to form a second defect layer 40 that can serve as a warpage control layer; see also Figure 8 , Figure 8 The arrow in the image indicates the direction of the second ion implantation.

[0094] Specifically, due to the implantation of the second ion, the heterogeneous substrate 2 can warp, and the heterogeneous substrate 2 forming the second defect layer 40 exhibits a warped state.

[0095] In some embodiments, the implanted ions for the second ion implantation include one or more of hydrogen ions, rare gas ions, nitrogen ions, phosphorus ions, oxygen ions, and boron ions; thus, the effectiveness of the first ion implantation and the stripping effect of the first defect layer 30 during the annealing process can be guaranteed.

[0096] In some embodiments, the conditions for the second ion implantation include: the energy of the second ion beam forming the second defect layer 40 can be 50 keV-10000 keV, and the dose of the implanted second ions can be 1 × 10⁻⁶. 13 / cm 2 -1×10 18 / cm 2 The temperature for implanting the second ion is -20℃ to 200℃; in this way, the effect of the first ion implantation and the peeling effect of the first defect layer 30 during the annealing process can be guaranteed.

[0097] The upper limit of the second ion beam energy can be 10000 keV, 9800 keV, 9700 keV, etc., and the lower limit of the second ion beam energy can be 50 keV, 60 keV, 70 keV, etc. It is understood that the second ion beam energy can be any value within the above range, and will not be enumerated here.

[0098] The upper limit of the temperature for implanting the second ion can be 200℃, 190℃, 180℃, etc., and the lower limit of the temperature for implanting the second ion can be -20℃, -15℃, -10℃, etc. It is understood that the temperature for implanting the second ion can be any value within the above range, and will not be enumerated here.

[0099] The greater the relative atomic mass of the injected second ion, the greater the ion beam energy required for injection.

[0100] Specifically, by controlling the energy and dosage of the second ion beam during the second ion implantation process, the second defect layer 40 can be stripped during the annealing process.

[0101] In some embodiments, when the second defect layer 40 serves as a warpage control layer, the warpage processing condition parameters may include one or more of the second ion beam energy, the dose of the implanted second ions, and the temperature of the implanted second ions. That is, during the warpage control process of the heterogeneous substrate 2, the warpage of the single-crystal functional material substrate 1 that forms the first defect layer 30 is taken as the warpage state target. By adjusting at least one of the second ion beam energy, the dose of the implanted second ions, and the temperature of the implanted second ions, the warpage of the heterogeneous substrate 2 is changed so that the difference between the warpage of the heterogeneous substrate 2 and the warpage of the single-crystal functional material substrate 1 that forms the first defect layer 30 is less than or equal to a preset value. In this way, by controlling the warpage of the second defect layer 40, the difference between the warpage of the heterogeneous substrate 2 and the single-crystal functional material substrate 1 is made less than or equal to the preset value, which can reduce the bonding gap between the heterogeneous substrate 2 and the single-crystal functional material substrate 1, thereby enhancing the diffusion capability of the bonding wave and increasing the bonding strength.

[0102] For example, relative to the warpage of the single-crystal functional material substrate 1 forming the first defect layer 30, if the warpage of the heterogeneous substrate 2 is small and the warpage difference is greater than a preset value, the implantation dose of the second ion can be adjusted to increase the warpage of the heterogeneous substrate 2 so that the warpage difference is less than or equal to the preset value.

[0103] In other embodiments, please refer to Figure 11 The warpage control layer is prepared by performing a dielectric deposition process on the first surface 21 of the heterogeneous substrate 2 to form a stress control dielectric layer 50 as the warpage control layer; wherein the dielectric deposited by the dielectric deposition process can produce thermal mismatch with the heterogeneous substrate 2.

[0104] In some embodiments, please refer to Figure 11 A dielectric material is deposited on the first surface 21 of the heterogeneous substrate 2 to form a stress regulation dielectric layer 50 that can serve as a warpage regulation layer.

[0105] Specifically, due to dielectric deposition, the heterogeneous substrate 2 can warp, and the heterogeneous substrate 2 forming the stress-regulating dielectric layer 50 exhibits a warped state.

[0106] In some embodiments, the dielectric material deposited during the dielectric deposition process is one or more of alumina, silicon dioxide, aluminum nitride, silicon nitride, or hafnium dioxide; thus, the warpage control effect on the heterogeneous substrate 2 can be guaranteed.

[0107] In some embodiments, the conditions and parameters for the dielectric deposition process include: a dielectric deposition temperature of 200°C-500°C and a dielectric deposition thickness of 2nm-500nm; thus, the warpage control effect on the heterogeneous substrate 2 can be guaranteed.

[0108] The upper limit of the medium deposition temperature can be 500℃, 480℃, 460℃, etc., and the lower limit can be 200℃, 230℃, 260℃, etc. It is understood that the medium deposition temperature can be any value within the above range, and will not be enumerated here.

[0109] The upper limit of the dielectric deposition thickness can be 500nm, 480nm, 460nm, etc., and the lower limit can be 2nm, 5nm, 8nm, etc. It is understood that the dielectric deposition thickness can be any value within the above range, and will not be enumerated here.

[0110] In some embodiments, when the stress-controlled dielectric layer 50 serves as a warpage control layer, the warpage processing condition parameters may include at least one of dielectric deposition temperature and dielectric deposition thickness. That is, during the warpage control process on the heterogeneous substrate 2, the warpage of the single-crystal functional material substrate 1 forming the first defect layer 30 is taken as the warpage state target. By adjusting at least one of the dielectric deposition temperature and dielectric deposition thickness, the warpage of the heterogeneous substrate 2 is changed so that the difference between the warpage of the heterogeneous substrate 2 and the warpage of the single-crystal functional material substrate 1 forming the first defect layer 30 is less than or equal to a preset value. In this way, by controlling the warpage of the stress-controlled dielectric layer 50, the difference between the warpage of the heterogeneous substrate 2 and the single-crystal functional material substrate 1 is less than or equal to the preset value, which can reduce the bonding gap between the heterogeneous substrate 2 and the single-crystal functional material substrate 1, thereby enhancing the diffusion capability of the bonding wave and increasing the bonding strength.

[0111] For example, relative to the warpage of the single-crystal functional material substrate 1 forming the first defect layer 30, if the warpage of the heterojunction substrate 2 is small and the warpage difference is greater than a preset value, the dielectric deposition thickness can be adjusted to increase the warpage of the heterojunction substrate 2 so that the warpage difference is less than or equal to the preset value.

[0112] Furthermore, the coefficient of thermal expansion of the dielectric deposited by the dielectric deposition process is different from that of the heterogeneous substrate 2.

[0113] In some embodiments, since the coefficient of thermal expansion of the dielectric deposited by the dielectric deposition process is different from that of the heterogeneous substrate 2, the dielectric deposited by the dielectric deposition process and the heterogeneous substrate 2 are thermally mismatched during the high-temperature dielectric deposition process. That is, the dielectric deposited by the dielectric deposition process and the heterogeneous substrate 2 expand to different degrees. As a result, the heterogeneous substrate 2 can be warped, and the heterogeneous substrate 2 forming the stress-regulating dielectric layer 50 is in a warped state.

[0114] S104. Please see Figure 9 and Figure 12 A single-crystal functional material substrate 1, which forms the first defect layer 30, and a heterogeneous substrate 2, which forms the warp control layer, are bonded together to obtain a heterogeneous bond.

[0115] In some embodiments, when the difference in warp state between the heterogeneous substrate 2 forming the warp control layer and the single-crystal functional material substrate 1 forming the first defect layer 30 meets a preset difference condition, the single-crystal functional material substrate 1 forming the first defect layer 30 and the heterogeneous substrate 2 forming the warp control layer are bonded together to obtain a heterogeneous bond.

[0116] In some embodiments, please refer to Figure 9 The monocrystalline functional material substrate 1, which forms the first defect layer 30, and the heterostructure substrate 2, which forms the second defect layer 40, are bonded together to obtain a heterostructure comprising a monocrystalline functional material substrate layer 10 forming the first defect layer 30 and a heterostructure substrate layer 20 forming the second defect layer 40.

[0117] In other embodiments, please refer to Figure 12 A single-crystal functional material substrate 1 forming a first defect layer 30 and a heterogeneous substrate 2 forming a stress-regulating medium layer 50 are bonded together to obtain a heterogeneous bond comprising a single-crystal functional material substrate layer 10 forming a first defect layer 30 and a heterogeneous substrate layer 20 forming a stress-regulating medium layer 50.

[0118] In some embodiments, the bonding method of the single-crystal functional material substrate 1 forming the first defect layer 30 and the heterogeneous substrate 2 forming the warp control layer includes, but is not limited to, hydrophilic bonding, room temperature vacuum activated bonding and anodic bonding; the activation gas can be one or more of argon, nitrogen and oxygen, the activation time can be 10s-540s, and the activation power can be 50W-1000W.

[0119] The upper limit of the activation time can be 540s, 520s, 480s, etc., and the lower limit of the activation time can be 10s, 15s, 20s, etc. It is understood that the activation time can be any value within the above range, and will not be enumerated here.

[0120] The upper limit of the activation power can be 1000W, 960W, 920W, etc., and the lower limit of the activation power can be 50W, 55W, 60W, etc. It is understood that the activation power can be any value within the above range, and will not be enumerated here.

[0121] S105. Please see Figure 10 and Figure 13 The heterobonded structure is then stripped to obtain the target heterostructure.

[0122] In some embodiments, please refer to Figure 9 When the second defect layer 40 serves as a warpage control layer, the heterogeneous bond is annealed and peeled to peel the single-crystal functional material substrate layer 10 along the first defect layer 30 to form a functional material thin film layer 101 with a first predetermined thickness. Additionally, the heterogeneous substrate layer 20 is peeled along the second defect layer 40 to form a heterogeneous substrate layer 201 with a second predetermined thickness, resulting in a target heterogeneous structure including the functional material thin film layer 101 and the heterogeneous substrate layer 201. Please refer to [link to relevant documentation]. Figure 10 .

[0123] In this embodiment of the application, the first preset thickness of the functional material thin film layer 101 is:

[0124] The range of 30nm to 20000nm increases the applicability of the target heterostructure and broadens its application scenarios.

[0125] The upper limit of the first preset thickness of the functional material thin film layer 101 can be 20000nm, 19500nm, 19000nm, etc., and the lower limit of the first preset thickness of the functional material thin film layer 101 can be 30nm, 35nm, 40nm, etc. It can be understood that the first preset thickness of the functional material thin film layer 101 can be any value within the above range, and will not be enumerated here.

[0126] The annealing conditions for annealing and stripping heterobonded structures can be at least one of nitrogen or hydrogen, and the annealing temperature can be 50℃-400℃.

[0127] The upper limit of the annealing temperature can be 400℃, 380℃, 360℃, etc., and the lower limit of the annealing temperature can be 50℃, 70℃, 90℃, etc. It can be understood that the annealing temperature can be any value within the above range, and will not be enumerated here.

[0128] Specifically, the depth of the first defect layer 30 directly affects the thickness of the functional material thin film layer 101. The smaller the distance between the first defect layer 30 and the bonding surface of the single crystal functional material substrate 1, the smaller the thickness of the prepared functional material thin film layer 101.

[0129] Correspondingly, the depth of the second defect layer 40 directly affects the thickness of the heterogeneous substrate layer 201. The smaller the distance between the second defect layer 40 and the second surface 22 of the heterogeneous substrate 2, the greater the thickness of the prepared heterogeneous substrate layer 201.

[0130] Specifically, in the context of Figure 9 During the annealing and peeling process of heterostructures, the annealing treatment can release the stress and warpage of the heterostructures, thus obtaining a flat target heterostructure. Please refer to [link / reference]. Figure 10 .

[0131] It is understandable that in application scenarios requiring a flat target heterogeneous structure, the second defect layer 40 can be selected as the warpage control layer.

[0132] In other embodiments, please refer to Figure 12 When the stress-regulating medium layer 50 serves as a warpage control layer, the heterogeneous bond is annealed and peeled to peel the single-crystal functional material substrate layer 10 along the first defect layer 30, thereby forming a functional material thin film layer 101 with a first preset thickness. This yields a target heterostructure including the functional material thin film layer 101, the stress-regulating medium layer 50, and the heterogeneous substrate layer 20. (See also...) Figure 13 .

[0133] The annealing conditions for annealing and stripping heterobonded structures can be at least one of nitrogen or hydrogen, and the annealing temperature can be 50℃-400℃.

[0134] The upper limit of the annealing temperature can be 400℃, 380℃, 360℃, etc., and the lower limit of the annealing temperature can be 50℃, 70℃, 90℃, etc. It can be understood that the annealing temperature can be any value within the above range, and will not be enumerated here.

[0135] Specifically, in the context of Figure 12 During the annealing and peeling process of the heterobonded structure, due to the presence of the stress-regulating medium layer 50, the annealing treatment cannot release the stress and warpage of the heterobonded structure to achieve a flat target heterostructure. Thus, a warped target heterostructure can be obtained. Please refer to [link to relevant documentation]. Figure 13 .

[0136] Understandably, in application scenarios where warping of the target heterogeneous structure is required, the stress-regulating medium layer 50 can be selected as the warping regulation layer.

[0137] The heterostructure preparation method provided in this application has the following beneficial effects:

[0138] 1. By forming a first defect layer in a single-crystal functional material substrate and a second defect layer in a heterogeneous substrate, the warpage difference between the heterogeneous substrate with the second defect layer and the single-crystal functional material substrate with the first defect layer satisfies a preset difference condition. In this way, the bonding gap between the heterogeneous substrate and the single-crystal functional material substrate can be reduced, thereby enhancing the diffusion ability of the bonding wave, increasing the bonding area, and thus enhancing the bonding strength, resulting in a flat target heterostructure.

[0139] 2. By forming a first defect layer in a single-crystal functional material substrate and a stress-modulating medium layer in a heterogeneous substrate, the difference in warpage state between the heterogeneous substrate with the stress-modulating medium layer and the single-crystal functional material substrate with the first defect layer satisfies a preset difference condition. In this way, the bonding gap between the heterogeneous substrate and the single-crystal functional material substrate can be reduced, thereby enhancing the diffusion ability of the bonding wave, increasing the bonding area, and thus enhancing the bonding strength, resulting in a warped target heterostructure.

[0140] Please see Figure 3 and Figure 5-10 The following describes specific embodiments of this application in conjunction with the above-described method for preparing heterostructures. Examples 1-9 use the following method to prepare the target heterostructures:

[0141] S11. Provide a single-crystal functional material substrate 1 and a heterogeneous substrate 2.

[0142] S12. A first ion implantation is performed on the single-crystal functional material substrate 1 to form a first defect layer 30, and the single-crystal functional material substrate 1 with the first defect layer 30 is in a warped state.

[0143] Wherein, the implanted ion of the first ion implantation can be a hydrogen ion, the energy of the first ion beam forming the first defect layer 30 can be E1, the dose of the first implanted ion can be A1, and the temperature of the first implanted ion is T1.

[0144] S13. Obtain warpage state data of the single-crystal functional material substrate 1 that forms the first defect layer 30.

[0145] Among them, based on the warpage detection equipment, the warpage state data of the single crystal functional material substrate 1 forming the first defect layer 30 is detected; the warpage state data includes the degree of warpage.

[0146] S14. Perform a second ion implantation on the heterogeneous substrate 2 to control the warpage of the heterogeneous substrate 2, and monitor the warpage state data of the heterogeneous substrate 2 during the warpage control process.

[0147] Specifically, a second ion is implanted into the second surface 22 of the heterogeneous substrate 2; the implanted ion can be a nitrogen ion, the energy of the second ion beam forming the second defect layer 40 can be E2, the dose of the implanted second ion can be A2, and the temperature of the implanted second ion is T2.

[0148] Among them, the warpage detection equipment is used to detect the current warpage state data of the heterogeneous substrate 2; the warpage state data includes the degree of warpage.

[0149] S15. Using the warp state data of the single-crystal functional material substrate 1 that forms the first defect layer 30 as the warp state target, adjust at least one of the second ion beam energy, the dose of the second ion implanted, and the temperature of the second ion implanted, until the warp state difference between the heterogeneous substrate 2 and the single-crystal functional material substrate 1 that forms the first defect layer 30 meets the preset difference condition, and form the second defect layer 40.

[0150] Among them, the warpage difference refers to the warpage difference between the heterogeneous substrate 2 forming the second defect layer 40 and the single crystal functional material substrate 1 forming the first defect layer 30; the preset difference condition is that the warpage difference is less than or equal to a preset value.

[0151] The preset value can be 45μm-50μm.

[0152] S16. Bond the single-crystal functional material substrate 1 that forms the first defect layer 30 and the heterogeneous substrate 2 that forms the second defect layer 40 to obtain a heterogeneous bond.

[0153] The heterogeneous bond includes a single-crystal functional material substrate layer 10 forming a first defect layer 30 and a heterogeneous substrate layer 20 forming a second defect layer 40.

[0154] The bonding method can be hydrophilic bonding, the activation time can be t, and the activation power can be P.

[0155] S17. The heterobonded structure is stripped to obtain the target heterostructure.

[0156] During the annealing and peeling process, the single crystal functional material substrate layer 10 is peeled off along the first defect layer 30 to form a functional material thin film layer 101 with a first preset thickness, and the heterogeneous substrate layer 20 is peeled off along the second defect layer 40 to form a heterogeneous substrate layer 201 with a second preset thickness, thereby obtaining a flat target heterogeneous structure including the functional material thin film layer 101 and the heterogeneous substrate layer 201.

[0157] The thickness of the functional material thin film layer 101 is δ1.

[0158] Among them, the annealing conditions for annealing and stripping can be nitrogen gas, and the annealing temperature can be T3.

[0159] The relevant parameters for Examples 1-9 are detailed in Table 1.

[0160] Table 1

[0161]

[0162]

[0163] Please see Figure 4-7 and Figure 11-13 The following describes some other specific embodiments of this application in conjunction with the above-described method for preparing heterostructures. Examples 10-18 use the following method to prepare the target heterostructures:

[0164] S21. Provide a single-crystal functional material substrate 1 and a heterogeneous substrate substrate 2.

[0165] S22. A first ion implantation is performed on the single-crystal functional material substrate 1 to form a first defect layer 30, and the single-crystal functional material substrate 1 with the first defect layer 30 is in a warped state.

[0166] Wherein, the implanted ion of the first ion implantation can be a helium ion, the energy of the first ion beam forming the first defect layer 30 can be E1, the dose of the first implanted ion can be A1, and the temperature of the first implanted ion is T1.

[0167] S23. Obtain warpage state data of the single-crystal functional material substrate 1 that forms the first defect layer 30.

[0168] Among them, based on the warpage detection equipment, the warpage state data of the single crystal functional material substrate 1 forming the first defect layer 30 is detected; the warpage state data includes the degree of warpage.

[0169] S24. Perform dielectric deposition on the heterogeneous substrate 2 to control the warpage of the heterogeneous substrate 2, and monitor the warpage state data of the heterogeneous substrate 2 during the warpage control process.

[0170] In this process, a dielectric is deposited on the first surface 21 of the heterogeneous substrate 2; the dielectric deposition temperature is T4, and the dielectric deposition thickness is δ2.

[0171] Among them, the warpage detection equipment is used to detect the current warpage state data of the heterogeneous substrate 2; the warpage state data includes the degree of warpage.

[0172] S25. Using the warp state data of the single-crystal functional material substrate 1 that forms the first defect layer 30 as the warp state target, at least one of the dielectric deposition temperature and dielectric deposition thickness is adjusted until the warp state difference between the heterogeneous substrate 2 and the single-crystal functional material substrate 1 that forms the first defect layer 30 meets the preset difference condition, thereby forming a stress-controlled dielectric layer 50.

[0173] Among them, the warpage difference refers to the warpage difference between the heterogeneous substrate 2 forming the stress regulation medium layer 50 and the single crystal functional material substrate 1 forming the first defect layer 30; the preset difference condition is that the warpage difference is less than or equal to the preset value.

[0174] The preset value can be 45μm-50μm.

[0175] S26. Bond the single-crystal functional material substrate 1 that forms the first defect layer 30 and the heterogeneous substrate 2 that forms the stress regulation medium layer 50 to obtain a heterogeneous bond.

[0176] The heterogeneous bond includes a single-crystal functional material substrate layer 10 forming a first defect layer 30 and a heterogeneous substrate layer 20 forming a stress modulation medium layer 50.

[0177] The bonding method can be anodic bonding, the activation time can be t, and the activation power can be P.

[0178] S27. The heterobonded structure is stripped to obtain the target heterostructure.

[0179] During the annealing and peeling process, the single crystal functional material substrate layer 10 is peeled off along the first defect layer 30 to form a functional material thin film layer 101 with a first preset thickness, resulting in a warped target heterostructure including the functional material thin film layer 101, the stress regulation medium layer 50, and the heterostructure substrate layer 20.

[0180] The thickness of the functional material thin film layer 101 is δ1.

[0181] The annealing conditions for annealing and stripping can be a mixture of nitrogen and hydrogen gas, and the annealing temperature can be T3.

[0182] The relevant parameters for Examples 10-18 are detailed in Table 2.

[0183] Table 2

[0184]

[0185]

[0186] Compared to Examples 1-18, the preparation method of the comparative example does not include warpage control treatment of the heterogeneous substrate. The preparation method of the comparative example is as follows: a single-crystal functional material substrate and a heterogeneous substrate are provided; a first ion implantation is performed on the single-crystal functional material substrate to form a first defect layer, resulting in a warped state; the single-crystal functional material substrate with the first defect layer and the heterogeneous substrate are bonded together to obtain a heterogeneous bond; the heterogeneous bond is peeled off to obtain the target heterostructure. In the comparative example, the single-crystal functional material substrate is warped, while the heterogeneous substrate is flat. Therefore, the bonding gap between the warped single-crystal functional material substrate and the flat heterogeneous substrate is large, resulting in low bonding strength.

[0187] The foregoing description has fully disclosed the specific embodiments of the present invention. It should be noted that any modifications made to the specific embodiments of the present invention by those skilled in the art do not depart from the scope of the claims. Accordingly, the scope of the claims is not limited to the foregoing specific embodiments.

Claims

1. A method for preparing a heterostructure, characterized in that, The method includes: Provides a single-crystal functional material substrate (1) and a heterogeneous substrate substrate (2); The single-crystal functional material substrate (1) is subjected to a first ion implantation to form a first defect layer (30), and the single-crystal functional material substrate (1) with the first defect layer (30) is in a warped state. The heterogeneous substrate (2) is subjected to warping control treatment to form a warping control layer, and the heterogeneous substrate (2) forming the warping control layer is in a warped state. A single-crystal functional material substrate (1) forming the first defect layer (30) and a heterogeneous substrate substrate (2) forming the warp control layer are bonded together to obtain a heterogeneous bonded body; The heterobonded composite is stripped to obtain the target heterostructure. The warpage control process performed on the heterogeneous substrate (2) to form a warpage control layer includes: Acquire warpage state data of the single-crystal functional material substrate (1) that forms the first defect layer (30); The heterogeneous substrate (2) is subjected to warpage control treatment, and the warpage state data of the heterogeneous substrate (2) is monitored during the warpage control treatment process. Using the warpage state data of the single-crystal functional material substrate (1) forming the first defect layer (30) as the warpage state target, the warpage processing condition parameters of the heterogeneous substrate (2) are adjusted until the warpage state difference between the heterogeneous substrate (2) and the single-crystal functional material substrate (1) forming the first defect layer (30) meets the preset difference condition, thereby forming the warpage control layer. The warpage control layer is prepared using the following method: A second ion implantation is performed on the second surface (22) of the heterogeneous substrate (2) to form a second defect layer (40) as the warpage control layer; the warpage treatment condition parameters include one or more of the second ion beam energy, the dose of the implanted second ion, and the temperature of the implanted second ion. or, A dielectric deposition process is performed on the first surface (21) of the heterogeneous substrate (2) to form a stress-controlled dielectric layer (50) as the warpage control layer; wherein the dielectric deposited by the dielectric deposition process can produce thermal mismatch with the heterogeneous substrate (2), and the warpage treatment condition parameters include at least one of dielectric deposition temperature and dielectric deposition thickness.

2. The method for preparing heterostructures according to claim 1, characterized in that, The heterogeneous substrate (2) includes a first surface (21) and a second surface (22) disposed opposite to each other, wherein the first surface (21) is used to bond to the single-crystal functional material substrate (1) forming the first defect layer (30).

3. The method for preparing heterostructures according to claim 1, characterized in that, The coefficient of thermal expansion of the medium deposited by the medium deposition process is different from that of the heterogeneous substrate (2).

4. The method for preparing heterostructures according to any one of claims 1-3, characterized in that, The implanted ions in the first ion implantation include at least one of hydrogen ions and rare gas ions.

5. The method for preparing heterostructures according to any one of claims 1-3, characterized in that, The implanted ions in the second ion implantation include one or more of hydrogen ions, rare gas ions, nitrogen ions, phosphorus ions, oxygen ions, and boron ions.

6. The method for preparing heterostructures according to any one of claims 1-3, characterized in that, The single-crystal functional material substrate (1) is a silicon substrate, an indium phosphide substrate, a gallium arsenide substrate, a gallium nitride substrate, a silicon carbide substrate, a gallium oxide substrate, or a diamond substrate.

7. The method for preparing heterostructures according to any one of claims 1-3, characterized in that, The heterogeneous substrate (2) is a silicon carbide substrate, a diamond substrate, a barium sulfide substrate, or a silicon substrate.

8. The method for preparing heterostructures according to any one of claims 1-3, characterized in that, In the first ion implantation process, the preparation method satisfies at least one of the following characteristics: The energy range for injecting the first ion is 50 keV-10 meV; The dose of the first ion injected was 1 × 10⁻⁶. 16 / cm 2 -1×10 18 / cm 2 ; The temperature at which the first ion was injected was -20℃ to 200℃.

9. The method for preparing heterostructures according to any one of claims 1-3, characterized in that, During the second ion implantation process, the preparation method satisfies at least one of the following characteristics: The energy range for injecting the second ion is 50 keV-10 meV; The dose of the second ion injected was 1 × 10⁻⁶. 13 / cm 2 -1×10 18 / cm 2 ; The temperature at which the second ion is injected is -20℃ to 200℃.

10. The method for preparing heterostructures according to any one of claims 1-3, characterized in that, The medium deposited in the medium deposition process is one or more of the following: alumina medium, silicon dioxide medium, aluminum nitride medium, silicon nitride medium, or hafnium dioxide medium.

11. The method for preparing heterostructures according to any one of claims 1-3, characterized in that, During the media deposition process, the preparation method satisfies at least one of the following characteristics: The medium deposition temperature is 200℃-500℃; The dielectric deposition thickness is 2nm-500nm.

12. The method for preparing heterostructures according to any one of claims 1-3, characterized in that, The target heterostructure has a functional material thin film layer (101) with a thickness of 30nm-20000nm.

13. The method for preparing heterostructures according to any one of claims 1-3, characterized in that, The warpage difference refers to the difference in warpage between the heterogeneous substrate (2) forming the warpage control layer and the single-crystal functional material substrate (1) forming the first defect layer (30); The condition for satisfying the preset difference is that the warpage difference is less than or equal to a preset value, and the preset value is 45μm-50μm.

14. A heterostructure, characterized in that, It is prepared by the heterostructure preparation method according to any one of claims 1-13.

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