A soft and hard cooperative processing method for optoelectronic materials

Abstract

The application provides a soft and hard collaborative processing method for photoelectric materials, and the processing process comprises the following steps: S1, contacting soft abrasive particles with the surface of the photoelectric material and moving relative to the photoelectric material, and under the action of pressure, the soft abrasive particles react with the photoelectric material to form a chemical reaction layer, and the hardness of the chemical reaction layer is less than the hardness of the photoelectric material; S2, under the action of pressure, the hard abrasive particles can cut into the chemical reaction layer, and the cutting depth is equivalent to the depth of the chemical reaction layer, and the processing path coincidence degree of the hard grinding area and the soft grinding area is basically consistent, so that the hard grinding area can quickly remove the chemical reaction layer along the processing path of the soft grinding area, and expose the fresh surface of the photoelectric material, to complete the single soft and hard collaborative processing; S3, repeating steps S1 and S2 to complete the processing of the photoelectric material. The application can improve the processing efficiency, the processing controllability and the processing quality, and the processing method is simpler.

Description

TECHNICAL FIELD

[0001] The present application relates to a kind of soft and hard synergistic processing method for optoelectronic material. BACKGROUND

[0002] Optoelectronic material has excellent physical and chemical properties such as corrosion resistance, high temperature resistance and wear resistance, and is the basic application material in many fields such as semiconductors, national defense and aerospace industry. However, due to high hardness, brittleness and low fracture toughness, optoelectronic material has the characteristics of typical difficult-to-machine materials, and is prone to cause a large amount of surface damage and subsurface damage during planarization processing, which seriously affects the service life and working condition performance of the product. With the continuous improvement of technology upgrading and application demand, higher requirements are put forward for the processing efficiency and processing quality of optoelectronic material.

[0003] Abrasive grain processing is the oldest but most widely used and mature processing method for planar processing of optoelectronic material. Abrasive grains are divided into hard abrasive grains and soft abrasive grains. Hard abrasive grains are super-hard abrasive grains with hardness not lower than that of optoelectronic material. The surface material of optoelectronic material is removed by mechanical action. Although high processing efficiency is achieved by using hard abrasive grains for processing, it is difficult to balance processing efficiency and processing quality, and multiple adjustments of abrasive grain size are often required to achieve high efficiency and high quality processing. Soft abrasive grains have a hardness lower than that of optoelectronic material. Chemical reaction occurs between the soft abrasive grains and the optoelectronic material under frictional heat and pressure during working condition. A reaction layer with a hardness lower than that of the soft abrasive grains is generated on the surface of the optoelectronic material. Then the reaction layer is removed by mechanical action. This processing method has small processing damage and can achieve nearly damage-free processing, but the processing efficiency is low and it is difficult to meet the large-scale production and processing demand of optoelectronic material. SUMMARY

[0004] The present application provides a soft and hard synergistic processing method for optoelectronic material, which can improve processing efficiency, processing controllability and processing quality, and the processing method is simpler.

[0005] The present application is implemented by the following technical solutions:

[0006] A soft and hard synergistic processing method for optoelectronic material, the processing tool used for processing includes a soft grinding area and a hard grinding area. The soft grinding area includes a first holding body and soft abrasive grains arranged on the first holding body. The hard grinding area includes a second holding body and hard abrasive grains arranged on the second holding body. The hardness of the soft abrasive grains is lower than that of the optoelectronic material and can react chemically with the optoelectronic material through frictional heat and pressure. The hardness of the hard abrasive grains is not lower than that of the optoelectronic material. The processing process includes the following steps:

[0007] Step S1, make the soft abrasive grains contact the surface of the optoelectronic material and move relative to the optoelectronic material. Chemical reaction occurs between the soft abrasive grains and the optoelectronic material under the action of pressure, so that the optoelectronic material generates a chemical reaction layer along the processing path of the soft grinding area. The hardness of the chemical reaction layer is less than the hardness of the optoelectronic material.

[0008] The step S2 sets the retreat amount of the hard abrasive particles to be greater than the retreat amount of the soft abrasive particles, so that the hard abrasive particles can cut into the chemical reaction layer under the pressure and the cutting depth is equivalent to the depth of the chemical reaction layer, and the processing path coincidence degree of the hard grinding area and the soft grinding area is basically consistent, so that the hard grinding area can quickly remove the chemical reaction layer along the processing path of the soft grinding area to expose the fresh surface of the optoelectronic material, thereby completing the single soft and hard cooperative processing.

[0009] The step S3 repeats the step S1 and the step S2 to complete the processing of the optoelectronic material.

[0010] Further, the processing tool comprises a plurality of soft grinding areas and a plurality of hard grinding areas, each soft grinding area and each hard grinding area is separately formed and orderly arranged on the surface of the processing tool.

[0011] Further, the area ratio of the soft grinding area and the hard grinding area is between 1.5:1 and 1:2.

[0012] Further, the processing tool comprises a plurality of soft grinding areas and a plurality of hard grinding areas, one soft grinding area and one hard grinding area form a composite structure of hard outside and soft inside, and each composite structure is connected with the processing tool through a force feedback controller.

[0013] Further, the area ratio of the soft grinding area and the hard grinding area is between 2:1 and 1:2.

[0014] Further, the soft abrasive particles are made of one or more of silicon oxide, magnesium oxide, zinc oxide, ferric oxide, chromium oxide, cerium oxide, and strontium oxide; and the hard abrasive particles are made of one or more of diamond, cubic boron nitride, and silicon carbide.

[0015] Further, the retreat amount of the hard abrasive particles is greater than the retreat amount of the soft abrasive particles, and the difference between the retreat amounts of the two is not less than the difference between the average cutting edge heights of the two.

[0016] Further, the average diameter of the hard abrasive particles is equal to or slightly greater than the average diameter of the soft abrasive particles, and the difference between the two is not more than 10%-30% of the average diameter of the hard abrasive particles.

[0017] Further, the processing path uniformity of the soft grinding area and the hard grinding area is not less than 0.8, and the processing path coincidence degree of the hard grinding area and the soft grinding area is not less than 0.9.

[0018] Further, the calculation of the processing path uniformity and the processing path coincidence degree is as follows:

[0019] The step T1 grids the processing path of the soft grinding area and the hard grinding area on the surface of the processing tool, and sets the first iThe number of soft grinding area path points in the grid, The number of hard grinding particle path points in the grid, i The processing coincidence degree MPOD According to the formula , wherein is the processing path coincidence degree in the grid; i

[0020] Step T2, count the number of path points of the soft grinding area and the hard grinding area in all grids, and then the processing path uniformity of the soft grinding area and the hard grinding area are respectively represented as: , wherein, n represents the number of grid divisions, and respectively represent the average value of the number of path points of the soft grinding area and the hard grinding area in all grids.

[0021] The present application has the following beneficial effects:

[0022] High processing efficiency: the soft grinding area and the hard grinding area are arranged on the surface of the processing tool, the soft grinding particles in the soft grinding area react with the photoelectric material to generate a chemical reaction layer with low hardness, and then the hard grinding particles in the hard grinding area which is highly coincident with the processing path of the soft grinding area are removed quickly through mechanical action, achieving the effect of soft and hard removal synergy. Because the chemical reaction layer generated on the surface of the workpiece by the soft grinding area can be removed by the hard grinding area in time and quickly, and a large area of fresh surface of the workpiece is exposed, the soft grinding area has a larger specific surface area when it contacts the workpiece surface, effectively promoting the chemical reaction rate of the soft grinding area and the workpiece, so that the hard grinding area has a higher removal amount in a single cycle of processing, thereby significantly improving the processing efficiency.

[0023] High processing controllability and stable processing effect: because the processing paths of the two areas arranged on the surface of the processing tool are determined and controllable, by adjusting the processing path uniformity and coincidence degree of the soft grinding area and the hard grinding area during processing, the two areas have high processing path synergy in motion, thereby ensuring that the soft and hard collaborative removal of the photoelectric material is continuously, uniformly, stably and efficiently performed, which is conducive to improving the high-efficiency and low-damage processing effect.

[0024] ​​​Minimal surface and subsurface damage to optoelectronic materials: By synergistically controlling the yielding amount and abrasive particle size of soft and hard abrasive particles in their respective holding areas, the cutting depth of the hard abrasive particles is maintained at the same level as the thickness of the chemical reaction layer. Under this cutting depth condition, the hard abrasive particles can efficiently remove the chemical reaction layer material without excessively penetrating the workpiece body, ensuring a dynamic balance between mechanical and chemical actions. At the same time, the chemical reaction layer can effectively buffer the impact of the hard abrasive particles on the workpiece surface, thereby greatly reducing the possibility of destructive damage to the optoelectronic material body material caused by the hard abrasive particles.

[0025] The processing method is simple: for planar processing of optoelectronic materials, no harsh processing environment is required, nor are high technical requirements placed on processing equipment. The entire processing can be achieved simply by using a processing tool designed with multiple soft and hard co-processing principles on an existing CNC machine tool. The soft and hard co-processing tool only needs to arrange co-processing units with a mixture of soft and hard abrasive particles on the surface of the existing processing tool. At the same time, no corrosive liquids are needed, so the cost is economical and environmentally friendly. Attached Figure Description

[0026] The present invention will now be described in further detail with reference to the accompanying drawings.

[0027] Figure 1 This is a flowchart of the processing procedure of the present invention.

[0028] Figure 2 This is a schematic diagram of the processing tool in Embodiment 1 of the present invention.

[0029] Figure 3 This is a schematic diagram of the processing tool in Embodiment 2 of the present invention.

[0030] The components include: 1. Soft grinding area; 2. Hard grinding area; 3. Optoelectronic materials; 4. Stage; 5. Machining tools; and 6. Force feedback controller. Detailed Implementation Example

[0031] like Figure 1 and Figure 2As shown, when processing optoelectronic materials 3 such as sapphire, silicon carbide, and single-crystal silicon, they are mounted on the stage 4 of a CNC machine tool, and the processing tool 5 (i.e., grinding head) is clamped onto the rotary spindle of the CNC machine tool. Processing parameters are set, and the spindle is started to make the processing tool 5 perform feed motion. In this embodiment, the upper surface of the processing tool 5 is provided with multiple soft grinding areas 1 and multiple hard grinding areas 2. Each soft grinding area 1 includes a first holding body and soft abrasive grains disposed on the first holding body, and each hard grinding area 2 includes a second holding body and hard abrasive grains disposed on the second holding body. The hardness of the soft abrasive grains is lower than that of the optoelectronic material 3, and they can chemically react with the optoelectronic material 3 through frictional heat and pressure. They can be made of one or more of silicon oxide, magnesium oxide, zinc oxide, ferric oxide, chromium oxide, cerium oxide, and strontium oxide. The hardness of the hard abrasive grains is not lower than that of the optoelectronic material 3, and they can be made of one or more of diamond, cubic boron nitride, and silicon carbide. The average diameter of the hard abrasive grains is equal to or slightly larger than the average diameter of the soft abrasive grains, with the difference not exceeding 10%-30% of the average diameter of the hard abrasive grains. For both the first and second gripping bodies, a resin binder is used. Different elastic moduli are obtained by adjusting the curing agent and curing time of the resin binder; this adjustment process is existing technology. Each soft abrasive region 1 and each hard abrasive region 2 is individually formed and arranged in an orderly manner on the surface of the machining tool 5. More specifically, the lower end face of the machining tool 5 is circular, and this circle is divided into three equal parts to form three arc-shaped sections. Multiple rows of soft abrasive regions 1 and rows of hard abrasive regions 2 within each arc-shaped section are arranged alternately. The cross-sections of both the hard film region and the soft abrasive region 1 are regular hexagons.

[0032] In this embodiment, 2 inch The sapphire wire slices were used as the processing object, and the processing parameters were as follows: the soft abrasive used was silica abrasive with a particle size of 20 mm. um The mass fraction is 60%, and the hard abrasive grains are diamond abrasive grains with a grain size of 25. um The mass fraction was 15%. The elastic modulus of the first holding body was adjusted to 3.13 GPa, and the elastic modulus of the second holding body was adjusted to 1.14 GPa. The area ratio of the soft grinding region 1 to the hard grinding region 2 was 1:1. The sapphire wire slice was ground using processing tool 5 at a grinding pressure of 0.4 g / cm³. MPa The machining tool 5 has a rotational speed of 90. rpm The speed ratio is 1.8 and the processing time is 50 minutes.

[0033] The specific processing steps include the following:

[0034] Step S1: The soft abrasive particles first come into contact with the surface of the sapphire wire slice and move relative to the sapphire wire slice. Under pressure, a chemical reaction occurs with the sapphire wire slice, so that a chemical reaction layer is generated along the processing path of the soft abrasion area 1. The hardness of the chemical reaction layer is less than that of the sapphire wire slice, and the thickness of the chemical reaction layer is between 1-100 nm.

[0035] In step S2, the retraction amount of the hard grinding region 2 is greater than that of the soft grinding region 1. The difference between the two retraction amounts is not less than the difference in their average cutting edge heights. The retraction amounts of the two regions are coordinated so that the hard abrasive grains can cut into the chemical reaction layer under pressure and the cutting depth is comparable to that of the chemical reaction layer. This ensures that the chemical reaction layer can be removed without excessive cutting into the sapphire wire slice body. The material removal mode is more in the ductile domain removal stage, so it will not cause too much damage to the sapphire wire slice body. The chemical reaction layer can alleviate the impact of the hard abrasive grains on the workpiece surface and also has a certain protective effect on the workpiece surface. In this embodiment, the arrangement of the hard grinding region 2 and the soft grinding region 1 makes the overlap of the processing paths of the hard grinding region 2 and the soft grinding region 1 basically consistent (in this embodiment, the overlap is 0.935). This allows the hard grinding region 2 to quickly remove the chemical reaction layer along the processing path of the soft grinding region 1, exposing the fresh surface of the sapphire wire slice. This completes a single soft and hard co-processing.

[0036] When rapid thinning of the workpiece is required, the amount of retreat of the hard abrasive grains in the second gripper can be appropriately reduced, or the grain size of the hard abrasive grains can be increased, thereby increasing the penetration depth of the hard abrasive grains and obtaining higher processing efficiency. When better surface quality is required, the amount of retreat of the hard abrasive grains can be increased or the grain size of the hard abrasive grains can be reduced. Hard abrasive grains with a hardness slightly lower than that of the workpiece but higher than that of the chemical reaction layer can also be selected, thereby further reducing the possibility of mechanical damage to the workpiece surface.

[0037] Step S3: Repeat steps S1 and S2 in the same area to complete the processing of the sapphire wire slice.

[0038] The calculated uniformity of the machining paths in soft grinding region 1 and hard grinding region 2 are 0.843 and 0.856, respectively, and the overlap of the machining paths is 0.935. The calculation of the uniformity and overlap of the machining paths includes the following steps:

[0039] Step T1: Mesh the machining paths of the soft grinding area 1 and hard grinding area 2 on the surface of machining tool 5. For the first i The number of path points in the soft-wear region of each grid. For the first i The number of hard abrasive path points in a grid determines the machining overlap. MPOD According to the formula Calculation, where For the first i The degree of overlap of processing paths in each grid;

[0040] Step T2: Count the number of path points in soft grinding region 1 and hard grinding region 2 in all grids. Then, the uniformity of the processing path in soft grinding region 1 and hard grinding region 2 is determined. , They are represented as follows: , ,in, n Indicates the number of grid divisions. and These represent the average number of path points in the soft and hard wear regions of all grids, respectively. Example

[0041] The difference between this embodiment and Embodiment 1 is that the way the soft grinding area 1 and the hard grinding area 2 are set on the processing tool 5 is different, specifically:

[0042] The machining tool 5 includes multiple soft abrasive zones 1 and multiple hard abrasive zones 2. A soft abrasive zone 1 and a corresponding hard abrasive zone 2 are combined to form a composite structure with an outer hard surface and an inner soft surface. Each composite structure is connected to the machining tool 5 via a force feedback controller 6. This composite structure can be a concentric geometric mechanism or other axisymmetric or centrosymmetric geometric structures. The force feedback controller 6 controls the load applied to the soft abrasive zone 1 and the hard abrasive zone 2 respectively, thereby achieving the same effect as increasing or decreasing the abrasive grain retraction amount, thus realizing precise control of the mechanical action of the hard abrasive grains and the chemical action of the soft abrasive grains, achieving dynamic equilibrium. The force feedback controller 6 and its connection to the composite structure are existing technologies, as is the process of combining the soft abrasive zone 1 and the hard abrasive zone 2, which can be achieved through a specific mold.

[0043] This embodiment uses 2 mm ×2 mm The SiC square sheet is used as the processing object, and the soft abrasive is cerium oxide with a particle size of 15. um The mass fraction is 60%, and the hard abrasive grains are made of diamond with a grain size of 18 mm. um The mass fraction is 15%. Both the holder body 1 containing cerium oxide abrasive grains and the holder body 2 containing diamond abrasive grains are made of resin binder. The normal force when the soft and hard abrasive unit contacts the workpiece is adjusted by the force feedback controller 6. The pressure applied in the soft abrasion area 1 is adjusted to 0.3. MPa The pressure applied to the hard abrasion zone 2 is 0.2. MPaThe area ratio of the soft grinding region 1 to the hard grinding region 2 is 1.2:1. Calculations show that the uniformity of the machining paths in the soft grinding region 1 and hard grinding region 2 of this machining tool 5 is 0.813 and 0.806 respectively, and the overlap of the machining paths is 0.921. The calculation method is the same as in Example 1. The machining tool 5 is used to process SiC workpieces at a grinding head speed of 120 rpm. rpm The speed ratio is 1.6, and the processing time is 30 minutes.

[0044] The above description is merely a preferred embodiment of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made in accordance with the scope of the patent application and the contents of the specification of the present invention should still fall within the scope of the patent of the present invention.

Claims

1. A method for soft and hard co-processing of optoelectronic materials, characterized by: The machining tool used in the machining includes a soft grinding area and a hard grinding area, the soft grinding area includes a first holding body and soft abrasive grains arranged on the first holding body, the hard grinding area includes a second holding body and hard abrasive grains arranged on the second holding body, the soft abrasive grains have a hardness lower than that of the photoelectric material and can chemically react with the photoelectric material through friction heat and pressure, the hard abrasive grains have a hardness not lower than that of the photoelectric material, and the machining process includes the following steps: Step S1, the soft abrasive grains are brought into contact with the surface of the photoelectric material and move relative to the photoelectric material, and chemically react with the photoelectric material under the action of pressure, so as to form a chemical reaction layer along the machining path of the soft grinding area, the hardness of the chemical reaction layer being lower than that of the photoelectric material; Step S2, the retreat amount of the hard abrasive grains is greater than that of the soft abrasive grains, and the difference between the retreat amounts of the two is not less than the difference between the average cutting edge heights of the two, so that the hard abrasive grains can cut into the chemical reaction layer under the action of pressure and the cutting depth is equivalent to the depth of the chemical reaction layer, and the machining path coincidence degree of the hard grinding area and the soft grinding area is basically consistent, so that the hard grinding area can quickly remove the chemical reaction layer along the machining path of the soft grinding area to expose the fresh surface of the photoelectric material, thereby completing the single soft and hard cooperative machining; Step S3, steps S1 and S2 are repeated to complete the machining of the photoelectric material; The machining tool includes a plurality of soft grinding areas and a plurality of hard grinding areas, one soft grinding area and one hard grinding area form a composite structure with hard outside and soft inside, and each composite structure is connected with the machining tool through a force feedback controller, and the force feedback controller controls the load applied to the soft grinding area and the hard grinding area respectively; The area ratio of the soft grinding area to the hard grinding area is between 2:1 and 1:2; The machining path uniformity of the soft grinding area and the hard grinding area is not less than 0.8, and the machining path coincidence degree of the hard grinding area and the soft grinding area is not less than 0.9; The average diameter of the hard abrasive grains is equal to or slightly larger than the average diameter of the soft abrasive grains, and when the average diameter of the hard abrasive grains is larger than the average diameter of the soft abrasive grains, the difference between them is within the range of 10%-30% of the average diameter of the hard abrasive grains.

2. The method according to claim 1, wherein: The soft abrasive grains are made of one or more of silicon oxide, magnesium oxide, zinc oxide, iron trioxide, chromium oxide, cerium oxide and strontium oxide; and the hard abrasive grains are made of one or more of diamond, cubic boron nitride and silicon carbide.

3. The method according to claim 2, wherein: The calculation of the machining path uniformity and the machining path coincidence degree is as follows: Step T1, meshing the machining path of the soft and hard abrasive areas of the tool surface, is the number of soft abrasive area path points in the i th grid, is the number of hard abrasive grain path points in the i th grid, then the machining coincidence degree MPOD is calculated according to the formula , wherein is the machining path coincidence degree in the i th grid; Step T2, count the path point numbers of the soft polishing area and the hard polishing area in all grids, and then the machining path uniformity of the soft polishing area and the hard polishing area , are respectively represented as: , wherein, n represents the number of grid divisions, and respectively represent the average values of the path point numbers of the soft polishing area and the hard polishing area in all grids.

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