Light source components and semiconductor lasers

Abstract

The embodiment of the present application relates to the field of laser technology, and discloses a light source assembly and a semiconductor laser, wherein the light source assembly comprises: a laser chip, a positive substrate member and a negative substrate member; the two sides of the laser chip are respectively bonded to the positive substrate member and the negative substrate member, and the laser chip is used to emit laser light; at least one of the positive substrate member and the negative substrate member has a side facing away from the laser chip set as an inclined surface. In the above manner, the embodiment of the present application improves the reliability of the laser.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of laser technology, and specifically to a light source component and a semiconductor laser. Background Art

[0002] When packaging a ring laser, a rectangular substrate material and a laser bar chip are usually welded together to form a bar unit, and then multiple bar units are welded together to form a ring bar group, which is finally packaged into a ring laser.

[0003] At present, in order to increase the contact area between the bar units, the existing technology uses relatively thick indium-based alloy solders to weld the bar units together. However, the indium-based alloy solder has a higher risk of failure under high current or high temperature. In addition, since the applied solder is relatively thick, the solder is easy to overflow onto the light-emitting cavity surface of the laser bar during the production process, blocking the light-emitting area, causing the bar light-emitting point to fail to emit light or burn, thereby reducing the reliability of the laser. Summary of the invention

[0004] In view of the above problems, the embodiments of the present application provide a light source assembly and a semiconductor laser, which improve the reliability of the laser.

[0005] According to one aspect of an embodiment of the present application, a light source assembly is provided, which includes: a laser chip, a positive substrate member and a negative substrate member; two sides of the laser chip are respectively bonded to the positive substrate member and the negative substrate member, and the laser chip is used to emit laser; at least one of the positive substrate member and the negative substrate member has a side facing away from the laser chip set as an inclined surface.

[0006] In the light source assembly provided in the embodiment of the present application, by respectively attaching the two sides of the laser chip to the positive substrate member and the negative substrate member, the two sides of the laser chip can form positive and negative electrodes, and current is injected into the laser chip to make the laser chip emit laser. And by making the side of at least one substrate member facing away from the laser chip as an inclined surface, the contact area of ​​the substrate member between two adjacent light source assemblies in the semicircular laser composed of the light source assembly can be increased. In this way, the series resistance of the laser can be reduced, the heat generated by the laser can be reduced, and further, the amount of solder required for welding or direct metal bonding between two adjacent light source assemblies can be reduced, and the risk of solder overflowing after melting at high temperature can be reduced, thereby improving the reliability of the laser.

[0007] In an optional manner, the angle between the plane where the emission surface of the laser chip is located and the inclined surface is an acute angle. By forming an acute angle between the plane where the emission surface of the laser chip is located and the inclined surface, the laser emits uniform and high-energy laser light, meeting the application requirements of ring-pumped solid-state lasers.

[0008] In an optional manner, the angle between the plane where the emission surface of the laser chip is located and the inclined surface is an obtuse angle. By forming an obtuse angle between the plane where the emission surface of the laser chip is located and the inclined surface, the irradiation range of the laser emitted by the laser is increased. When applied to laser lighting, the illumination range of the laser can be expanded. When applied to the field of laser radar, the scanning angle FOV range of the laser can be increased.

[0009] In an optional manner, the front substrate component includes a first main component and a first intermediate component; the first main component is a rectangular parallelepiped, one side of the first main component is bonded to the laser chip, and the other side is bonded to the first intermediate component; the side of the first intermediate component facing away from the first main component is an inclined surface. By setting the front substrate component as the first main component and the first intermediate component, and setting the first main component as a rectangular parallelepiped, the processing efficiency of the bonding of the first main component and the laser chip can be improved, and by changing the angle of the inclined surface of the first intermediate component, the angle at which the laser chip of each light source component in the semicircular laser emits the laser can be changed, thereby reducing the processing cost of the light source component.

[0010] In an optional manner, the negative substrate member includes a second main body member and a second intermediate member; the second main body member is a rectangular parallelepiped, one side of the second main body member is bonded to the laser chip, and the other side is bonded to the second intermediate member; the side of the second intermediate member facing away from the second main body member is an inclined surface. By setting the positive substrate member as the second main body member and the second intermediate member, and setting the second main body member as a rectangular parallelepiped, the processing efficiency of the bonding of the second main body member and the laser chip can be improved, and by changing the angle of the inclined surface of the second intermediate member, the angle at which the laser chip of each light source assembly in the semicircular laser emits the laser can be changed, thereby reducing the processing cost of the light source assembly.

[0011] In an optional manner, the light source assembly further includes an insulating member; the insulating member is respectively arranged in affixed with one end of the positive substrate member away from the laser chip emission surface and one end of the negative substrate member away from the laser chip emission surface. By arranging the insulating member in the light source assembly and respectively arranging the insulating member in affixed with one end of the positive substrate member away from the laser chip and one end of the negative substrate member away from the laser chip, the insulating member can achieve the insulation function between the light source assembly and the heat dissipation medium, and can also transfer the heat generated by the laser chip to the heat dissipation medium, so as to ensure the stable operation of the laser chip.

[0012] In an optional manner, the insulating member includes a first insulating portion and a second insulating portion; the first insulating portion is bonded to an end of the positive substrate member away from the emission surface of the laser chip; the second insulating portion is bonded to an end of the negative substrate member away from the emission surface of the laser chip; the first insulating portion and the second insulating portion are bonded to or separately from the two sides facing each other. By bonding the first insulating portion to an end of the positive substrate member away from the emission surface of the laser chip, and bonding the second insulating portion to an end of the negative substrate member away from the emission surface of the laser chip, the welding accuracy or metal bonding accuracy between the first insulating portion and the positive substrate member and between the second insulating portion and the negative substrate member can be improved, respectively, the contact area between the first insulating portion and the positive substrate member and between the second insulating portion and the negative substrate member is ensured, and the normal heat conduction function of the first insulating portion and the second insulating portion is ensured, so that the laser chip can work normally.

[0013] In an optional manner, the positive substrate member and the negative substrate member are respectively fixed to the two sides of the laser chip by welding or direct metal bonding; a groove is provided in the region opposite to the laser chip on the insulating member, the notch of the groove faces the laser chip, and the groove is configured to receive solder melted due to high temperature. By providing a notch facing the laser chip groove at a position of the insulating member corresponding to the laser chip, the solder melted due to high temperature on both sides of the laser chip can flow into the groove, thereby preventing the laser chip from being short-circuited due to excessive overflow of the melted solder, and improving the reliability of the light source assembly.

[0014] According to another aspect of the embodiment of the present application, a semiconductor laser is provided, which includes a base and at least two light source components provided in the above embodiment; between two adjacent light source components, one side of the positive substrate component facing away from the laser chip is bonded with the other side of the negative substrate component facing away from the laser chip; multiple light source components are arranged circumferentially to form an arc structure and are arranged on the base. In the semiconductor laser provided in the embodiment of the present application, by arranging multiple light source components in the circumferential direction, and in two adjacent light source components, one side of the positive substrate component facing away from the laser chip is bonded with the other side of the negative substrate component facing away from the laser chip, each light source component can form a semiconductor laser with an arc-shaped concave or convex structure, and the contact area of ​​the substrate component between the two adjacent light source components can be increased, the series resistance of the semiconductor laser can be reduced, and the heat generation of the semiconductor laser can be reduced. Furthermore, the amount of solder required for welding or direct metal bonding between the two adjacent light source components can be reduced, and the risk of solder overflowing after melting at high temperature can be reduced, thereby improving the reliability of the semiconductor laser.

[0015] In an optional manner, between two adjacent light source assemblies, the positive substrate member of one is fixed to the negative substrate member of the other by soldering or direct metal bonding. By soldering or directly metal bonding the positive substrate member and the negative substrate member of two adjacent light source assemblies, the connection stability between the light source assemblies can be improved, thereby improving the reliability of the semiconductor laser.

[0016] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present application. Also, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0018] Figure 1 A schematic diagram of the structure of a bar unit in an existing bar group provided in an embodiment of the present invention;

[0019] Figure 2a A schematic diagram of the structure of a light source assembly provided by an embodiment of the present invention;

[0020] Figure 2b A schematic diagram of the structure of a light source assembly provided by an embodiment of the present invention;

[0021] Figure 2c A schematic diagram of the structure of a light source assembly provided by an embodiment of the present invention;

[0022] Figure 3 A schematic diagram of the structure of a ring-structured laser provided in an embodiment of the present invention;

[0023] Figure 4a A schematic diagram of the structure of a light source assembly provided by an embodiment of the present invention;

[0024] Figure 4b A schematic diagram of the structure of a light source assembly provided by an embodiment of the present invention;

[0025] Figure 4c A schematic diagram of the structure of a light source assembly provided by an embodiment of the present invention;

[0026] Figure 5 A schematic diagram of the structure of another ring-structured laser provided by an embodiment of the present invention;

[0027] Figure 6A schematic diagram of the structure of another light source assembly provided by an embodiment of the present invention;

[0028] Figure 7 A schematic diagram of the structure of another light source assembly provided by an embodiment of the present invention;

[0029] Figure 8 A schematic diagram of the structure of a light source assembly provided by an embodiment of the present invention;

[0030] Fig. 9 A schematic diagram of the structure of a light source assembly provided by an embodiment of the present invention;

[0031] Fig.10 A schematic diagram of the structure of a semiconductor laser provided by an embodiment of the present invention;

[0032] Fig.11 A schematic diagram of the structure of a laser emitting device provided in an embodiment of the present invention;

[0033] Fig.12 A schematic diagram of the structure of a semiconductor laser provided by an embodiment of the present invention;

[0034] Fig.13 A schematic diagram of the structure of another semiconductor laser provided in an embodiment of the present invention.

[0035] The reference numerals in the specific implementation manner are as follows:

[0036] 10. Semiconductor laser; 20. Radiator;

[0037] 100, light source assembly; 200, base; 300, plane; 400, bar assembly;

[0038] 110, laser chip; 120, positive substrate component; 130, negative substrate component; 140, insulating component;

[0039] 121, inclined surface; 122, first main body component; 123, first intermediate component; 131, inclined surface; 132, second main body component; 133, second intermediate component; 141, first insulating portion; 142, second insulating portion; 143, groove;

[0040] 410, Ba Tiao unit;

[0041] 411. Bar chip; 412. Rectangular substrate material. DETAILED DESCRIPTION

[0042] The following embodiments of the technical solution of the present application are described in detail in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application, and are therefore only used as examples, and cannot be used to limit the scope of protection of the present application.

[0043] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

[0044] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0045] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0046] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists, A and B exist at the same time, and B exists. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0047] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0048] In the description of the embodiments of the present application, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present application.

[0049] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0050] Semiconductor lasers have the advantages of small size, light weight, high reliability, long service life and low cost. They have been widely used in various fields of the national economy, such as semiconductor pumped solid state lasers, fiber lasers, medical cosmetology and industrial processing. Among them, the semiconductor pumped solid state laser (DPSSL) is a new type of laser that uses solid laser materials as working materials and semiconductor lasers as pump sources. It is also a second-generation new solid state laser with high efficiency, long life, high beam quality, good stability and compact and miniaturized structure.

[0051] Semiconductor laser bars can be used for ring laser packaging. The manufactured laser can generate annular laser spots, including semicircular, large semicircular, circular or partially circular laser spots. When irradiated into a circular light-absorbing medium (or called a laser crystal rod) with a certain diameter centered on the center of the circle, high beam quality laser can be generated. This is the application of a ring semiconductor pumped solid-state laser. The high beam quality laser generated by this solid-state laser can be used in intelligent manufacturing, industrial processing, material processing, scientific research, medical cosmetology, laser ranging and other fields.

[0052] At present, when packaging a ring laser, the rectangular substrate material and the laser bar chip are usually welded together to form a bar unit, and then multiple bar units are welded together to form a ring bar group, and finally packaged into a ring laser. For details, please refer to Figure 1 , Figure 1 FIG. 4 shows a schematic diagram of the structure of a bar unit 410 in an existing bar group 400. Figure 1 As shown, when the rectangular substrate material 412 between the bar units 410 forms an arc structure, only one edge of the upper end surface is connected to each other, resulting in a small contact area between the bar units 410, making the resistance of the ring laser relatively high, and easily generating high temperature under high current density working conditions, causing the laser to easily have sparking problems and low reliability for long-term use.

[0053] In order to increase the contact area between the bar units 410, a relatively thick indium-based alloy solder is usually used to weld the bar units together to reduce the resistance of the ring laser. However, indium-based alloy solder has defects such as low melting point and poor stability, and has a high risk of failure under high current or high temperature. In addition, since the applied solder is relatively thick, the solder is easy to overflow to the light-emitting cavity surface of the laser bar chip 411 during the manufacturing process, blocking the light-emitting area, causing the bar light-emitting point to not emit light or burn out, thereby reducing the reliability of the laser.

[0054] Based on this, the present application proposes a light source assembly (equivalent to the bar unit mentioned above), which is assembled into a light source assembly with a bevel on at least one side by using a substrate material with a bevel to fit the two sides of a laser chip. When multiple light source assemblies are arranged in sequence to form a ring laser, the contact area between the substrate materials of two adjacent light source assemblies can be increased, the resistance of the light source assembly can be reduced, and the solder required between two adjacent light source assemblies can be reduced, thereby avoiding the situation where the reliability of the laser is reduced due to thick solder, thereby improving the reliability of the laser.

[0055] The light source assembly provided in the embodiment of the present application includes but is not limited to semiconductor lasers and solid lasers for semicircular, partial circular, semicircular or circular shapes. The embodiment of the present application is described by taking a semicircular semiconductor laser as an example, which does not constitute a limitation on the protection scope of the present application.

[0056] See also Figure 2a-2c , 2a- Figure 2c The schematic diagrams of the structures of the light source components provided by the embodiments of the present invention are shown respectively. As shown in the figure, the light source component 100 includes: a laser chip 110, a positive substrate 120 and a negative substrate 130. The two sides of the laser chip 110 ( Figure 2a-2c The positive substrate 120 and the negative substrate 130 are respectively attached to each other along the x-axis direction, and the laser chip 110 is used to emit laser. At least one of the positive substrate 120 and the negative substrate 130 has a surface facing away from the laser chip 110 as an inclined surface.

[0057] Specifically, the laser chip 110 is a semiconductor diode laser, and a simple current injection method is used to generate stimulated radiation luminescence, so that the laser chip 110 can emit laser. For example, it can be a single-tube, bar-shaped equilateral emitting laser. The embodiment of the present application is described by taking the laser bar as an example, which does not constitute a limitation on the protection scope of the present application. The positive substrate member 120 and the negative substrate member 130 are both highly conductive and highly thermally conductive substrate materials that match the thermal expansion coefficient of the laser chip 110, such as copper-tungsten, copper-diamond composite materials, etc.

[0058] In order to inject current into the laser chip 110, the two sides of the laser chip 110 are respectively attached to the positive substrate member 120 and the negative substrate member 130, so that the two sides of the laser chip 110 are completely in contact with the substrate member 120 and the negative substrate member 130, so that when the light source assembly 100 is powered on, the positive substrate member 120 on one side of the laser chip 110 is the positive electrode, and the negative substrate member 130 on the other side of the laser chip 110 is the negative electrode, so that a voltage is formed between the positive substrate member 120 and the negative substrate member 130 on both sides of the laser chip 110, so that current can be injected into the laser chip 110, so that one end of the laser chip 110 emits laser light. Figure 2a-2c The straight arrow in the middle indicates the direction of laser emission.

[0059] In a preferred embodiment, the bonding method can be to weld and fix the positive substrate member 120 and the laser chip 110, as well as the negative substrate member 130 and the laser chip 110, or fix them by direct metal bonding to ensure the stability of the connection between the laser chip 110 and the positive substrate member 120 and the negative substrate member 130, respectively.

[0060] At least one of the positive substrate member 120 and the negative substrate member 130 is set as an inclined surface on a side away from the laser chip 110. Specifically, it can be as follows: Figure 2a As shown in FIG, the side of the front substrate 120 facing away from the laser chip 110 is set as an inclined surface, or as shown in FIG. Figure 2b As shown in FIG. 1 , the side of the negative substrate 130 facing away from the laser chip 110 is set as an inclined surface. Alternatively, Figure 2c As shown in FIG. 1 , a surface of the positive substrate member 120 facing away from the laser chip 110 and a surface of the negative substrate member 130 facing away from the laser chip 110 are both arranged as inclined surfaces.

[0061] For example, the side of the negative substrate 130 facing away from the laser chip 110 is set as an inclined surface. Figure 3 , Figure 3The schematic diagram of the structure of the ring structure laser is shown. As shown in the figure, a plurality of light source assemblies 100 are welded and fixed in sequence to form a ring structure laser. At this time, in any two adjacent light source assemblies 100, the side of the positive substrate member 120 of one of them facing away from the laser chip 110 and the side of the negative substrate member 130 of the other facing away from the laser chip 110 are welded to each other, which can effectively increase the contact area of ​​the substrate members between the two adjacent light source assemblies 100, reduce the series resistance of the semicircular laser, and reduce the high temperature generated by the semicircular laser under high current density working conditions. Further, the amount of solder used to weld the substrate members can be reduced, thereby reducing the risk of the solder overflowing after melting at high temperature and affecting the laser chip 110. The method of setting the side of the positive substrate member 120 facing away from the laser chip 110 as an inclined plane or setting the side of the positive substrate member 120 facing away from the laser chip 110 and the side of the negative substrate member 130 facing away from the laser chip 110 as inclined planes is similar, and will not be elaborated here.

[0062] In some embodiments, in order to reduce the probability of failure of the solder at high temperature, a solder with a higher melting point, such as gold-tin solder, prefabricated gold-tin solder sheet or prefabricated gold-tin film, is used to weld and fix the positive substrate component 120 to the laser chip 110 and the negative substrate component 130 to the laser chip 110, so as to ensure the reliability of the solder and reduce the risk of solder overflow, thereby improving the reliability of the laser. In other embodiments, the positive substrate component 120 to the laser chip 110 and the negative substrate component 130 to the laser chip 110 can also be fixed by direct metal bonding. When fixed by direct metal bonding, an interface solder is selected to achieve metal bonding. The melting point temperature of the interface solder will be lower than the melting point of the gold-tin solder, the stress will be reduced, and the solder will hardly overflow, effectively avoiding the failure of the solder at high temperature.

[0063] In the light source assembly 100 provided in the embodiment of the present application, by fitting the two sides of the laser chip 110 with the positive substrate member 120 and the negative substrate member 130 respectively, the two sides of the laser chip 110 can form positive and negative electrodes, and inject current into the laser chip 110 to make the laser chip 110 emit laser. And by making the side of at least one substrate member facing away from the laser chip 110 as an inclined surface, the contact area of ​​the substrate member between two adjacent light source assemblies 100 in the semicircular laser composed of the light source assembly 100 can be increased. In this way, the series resistance of the laser can be reduced, the heat generated by the laser can be reduced, and further, the amount of solder required for welding or direct metal bonding between two adjacent light source assemblies 100 can be reduced, and the risk of solder overflowing after melting at high temperature can be reduced, thereby improving the reliability of the laser.

[0064] In order to obtain uniform high-energy laser, this application further proposes an implementation method, please continue to refer to Figure 2a-2c, the angle α between the plane where the emitting surface of the laser chip 110 is located and the inclined surface is an acute angle.

[0065] by Figure 2a Taking the light source assembly 100 shown as an example, the plane 300 where the emitting surface of the laser chip 110 is located refers to the plane where the light-emitting end of the laser chip 110 is located. The plane is a natural plane, and its edge extends infinitely. The dotted line in the figure represents the plane 300, and the inclined surface 121 is the surface of the positive substrate component 120, and its edge is the outer edge of the surface of the positive substrate component 120. The angle α between the plane 300 and the inclined surface 121 refers to the angle formed between the inclined surface 121 on the outside (i.e., the outside of the structural body of the positive substrate component 120) and the plane 300.

[0066] Figure 2b The light source assembly 100 shown is Figure 2a The difference of the light source assembly 100 shown is that the inclined surface 131 of the negative substrate member 130 forms an angle α with the plane 300. Figure 2c Light source assembly shown Figure 2a The difference of the light source assembly 100 shown is that the inclined surface 121 of the positive substrate member 120 and the inclined surface 131 of the negative substrate member form an angle α with the plane 300 respectively.

[0067] Specifically, when the angle α formed between the plane 300 where the emission surface of the laser chip 110 is located and the inclined surface 121 is an acute angle, the size of the positive substrate member 120 and / or the negative substrate member 130 at one end of the emission surface of the laser chip 110 is smaller than the size at one end away from the emission surface of the laser chip 110, so that when the light source components 100 are sequentially arranged to form a semicircular laser, the distance between the emission surfaces of the laser chips 110 of two adjacent light source components 100 is reduced, so that the lasers emitted by the laser chips 110 can overlap each other, making the lasers emitted by the semicircular laser more uniform and higher in energy. Further, by changing the lateral dimensions of the positive substrate member 120 and / or the negative substrate member 130, a semicircular laser composed of a plurality of light source components 100 can be realized, so that the distances between the light source components 100 are equal, unequal or have a certain period, so that the laser is emitted according to the expected design to meet different laser requirements.

[0068] By forming an acute angle between the plane 300 where the emission surface of the laser chip 110 is located and the inclined surface 121 , the laser emits uniform and high-energy laser light, thus meeting the application requirements of the ring-pumped solid-state laser.

[0069] In order to increase the irradiation range of the laser, the present application further proposes an implementation method, please continue to refer to Figure 4a-4c , Figure 4a-4cThe schematic structural diagrams of the light source components provided by several other embodiments of the present invention are respectively shown. As shown in the figures, the angle β between the plane where the emitting surface of the laser chip 110 is located and the inclined surface is an obtuse angle.

[0070] Specifically, you can Figure 4a As shown in FIG. 1 , the side of the front substrate 120 facing away from the laser chip 110 is set as an inclined surface. Figure 4b As shown in FIG. 1 , the side of the negative substrate 130 facing away from the laser chip 110 is set as an inclined surface. Figure 4c As shown in FIG. 1 , a surface of the positive substrate member 120 facing away from the laser chip 110 and a surface of the negative substrate member 130 facing away from the laser chip 110 are both arranged as inclined surfaces.

[0071] by Figure 4a Taking the light source assembly 100 as an example, the angle β formed between the plane 300 where the emission surface of the laser chip 110 is located and the inclined surface 121 of the front substrate member 120 is an obtuse angle. Figure 4b The light source assembly 100 shown Figure 4a The difference of the light source assembly 100 shown is that the inclined surface 131 of the negative substrate member 130 forms an angle β with the plane 300 . Figure 4c The light source assembly shown is Figure 4a The difference of the light source assembly 100 shown is that the inclined surface 121 of the positive substrate member 120 and the inclined surface 131 of the negative substrate member form an angle β with the plane 300 respectively.

[0072] For example, the side of the negative substrate 130 facing away from the laser chip 110 is set as an inclined surface. Figure 5 , Figure 5 Another schematic diagram of the structure of a ring-shaped laser is shown. As shown in the figure, a plurality of light source assemblies 100 are welded and fixed in sequence to form a ring-shaped laser. At this time, the size of the negative substrate member 130 located at one end of the emission surface of the laser chip 110 is larger than the size of the end away from the emission surface of the laser chip 110, so that when the light source assemblies 100 are sequentially bonded to form a semicircular laser, the distance between the emission surfaces of the laser chips 110 of two adjacent light source assemblies 100 increases, so that the laser emitted by the laser chip 110 can be emitted from different angles and form divergent spots, occupying different areas, and finally the semicircular laser can emit lasers with fan-shaped spots. Furthermore, by changing the lateral size of the positive substrate member 120 and / or the negative substrate member 130, the angle between the lasers emitted by each laser chip 110 can be changed to meet the laser requirements at different angles. The method of setting the side of the positive substrate 120 facing away from the laser chip 110 as an inclined surface or setting the side of the positive substrate 120 facing away from the laser chip 110 and the side of the negative substrate 130 facing away from the laser chip 110 as inclined surfaces is similar, and will not be elaborated here.

[0073] By forming an obtuse angle β between the plane 300 where the emission surface of the laser chip 110 is located and the inclined surface 121, the irradiation range of the laser emitted by the laser is increased. When applied to laser lighting, the illumination range of the laser can be expanded. When applied to the field of laser radar, the scanning angle (Field of View, FOV) range of the laser can be increased.

[0074] In order to reduce the processing cost of the light source assembly 100, the present application further proposes an implementation method, see Figure 6 , Figure 6 A schematic diagram of the structure of another light source assembly provided by an embodiment of the present application is shown. As shown in the figure, the front substrate component 120 includes a first main body component 122 and a first intermediate component 123. The first main body component 122 is a rectangular parallelepiped, one side of the first main body component 122 is bonded to the laser chip 110, and the other side is bonded to the first intermediate component 123. The side of the first intermediate component 123 facing away from the first main body component 122 is an inclined surface.

[0075] During the processing, the positive substrate component 120 is set as the first main body component 122 and the first middle component 123, and the first main body component 122 is set as a standard rectangular component, so that the cost of the first main body component 122 is reduced, and one side of the first main body component 122 is easier to fit with one side of the laser chip 110 for processing, thereby improving the processing efficiency and reducing the processing cost of the light source assembly 100.

[0076] Furthermore, by fitting the other side of the first main body component 122 to the first middle component 123, and setting the other side of the first middle component 123 facing away from the first main body component 122 as a slope, when multiple light source assemblies 100 form a semicircular laser, the contact area between the substrate components of two adjacent light source assemblies 100 can be increased, and by changing the slope angle of the first middle component 123, the angle at which the laser chips 110 of the two adjacent light source assemblies 100 emit lasers can be changed, thereby meeting different laser requirements and reducing the processing cost of the light source assembly 100.

[0077] By setting the positive substrate component 120 as the first main component 122 and the first middle component 123, and setting the first main component 122 as a rectangular parallelepiped, the processing efficiency of the fitting setting of the first main component 122 and the laser chip 110 can be improved, and by changing the angle of the inclined surface of the first middle component 123, the angle at which the laser chip 110 of each light source component 100 in the semicircular laser emits the laser can be changed, thereby reducing the processing cost of the light source component 100.

[0078] In order to further reduce the processing cost of the light source assembly 100, the present application further proposes an implementation method, see Figure 7 , Figure 7 A schematic diagram of the structure of another light source assembly provided by an embodiment of the present application is shown. As shown in the figure, the negative substrate member 130 includes a second main body member 132 and a second intermediate member 133. The second main body member 132 is a rectangular parallelepiped, one side of the second main body member 132 is bonded to the laser chip 110, and the other side is bonded to the second intermediate member 133. The side of the second intermediate member 133 facing away from the second main body member 132 is an inclined surface.

[0079] During the processing, the negative substrate component 130 is set as the second main body component 132 and the second intermediate component 133, and the second main body component 132 is set as a standard component of a rectangular parallelepiped, so that the cost of the second main body component 132 is reduced, and one side of the second main body component 132 is easier to fit with one side of the laser chip 110 for processing, thereby improving the processing efficiency and reducing the processing cost of the light source assembly 100.

[0080] Furthermore, by fitting the other side of the second main body component 132 to the second middle component 133, and setting the other side of the second middle component 133 facing away from the second main body component 132 as a slope, when a plurality of light source assemblies 100 form a semicircular laser, the contact area between the substrate components of two adjacent light source assemblies 100 can be increased, and by changing the slope angle of the second middle component 133, the angle at which the laser chips 110 of two adjacent light source assemblies 100 emit lasers can be changed, thereby meeting different laser requirements and reducing the processing cost of the light source assembly 100.

[0081] By setting the positive substrate component 120 as the second main body component 132 and the second middle component 133, and setting the second main body component 132 as a rectangular parallelepiped, the processing efficiency of the fitting setting of the second main body component 132 and the laser chip 110 can be improved, and by changing the angle of the inclined surface of the second middle component 133, the angle at which the laser chip 110 of each light source component 100 in the semicircular laser emits the laser can be changed, thereby reducing the processing cost of the light source component 100.

[0082] In order to achieve the heat dissipation effect of the light source assembly 100, the present application further proposes an implementation method, see Figure 8 , Figure 8 The schematic diagram of the structure of the light source assembly provided by the embodiment of the present application is shown. As shown in the figure, the light source assembly 100 further includes an insulating member 140. The insulating member 140 is respectively arranged in contact with one end of the positive substrate member 120 away from the emission surface of the laser chip 110 and one end of the negative substrate member 130 away from the emission surface of the laser chip 110.

[0083] When multiple light source assemblies 100 form a semicircular laser, since the laser chip 110 will generate a large amount of heat during operation and conduct it to the positive substrate 120 and the negative substrate 130, in order to eliminate the heat generated by the laser chip 110, it is necessary to transfer the heat of the laser chip 110 to other heat dissipation media. The heat dissipation medium is generally arranged at one end of the emitting surface of the laser chip 110 of the light source assembly 100, and is usually made of metal material. In this case, it is necessary to arrange an insulating member 140 at one end of the light source assembly 100 away from the laser chip 110 to ensure that the light source assembly 100 and the heat dissipation medium are electrically insulated, so that the heat dissipation medium is not charged when the light source assembly 100 or the semicircular laser is working, thereby improving the electrical safety of the laser. Among them, the insulating member 140 can use a high thermal conductivity ceramic insulating material with a thermal expansion coefficient, such as aluminum nitride ceramics, silicon carbide and diamond materials, so that the insulating member 140 can not only achieve the insulation effect, but also effectively dissipate the heat of the light source assembly 100.

[0084] Specifically, in order to absorb the heat generated by the laser chip 110 and achieve the insulation effect on the light source assembly 100, the insulating member 140 is respectively bonded to one end of the positive substrate member 120 away from the emission surface of the laser chip 110 and one end of the negative substrate member 130 away from the emission surface of the laser chip 110, so that the insulating member 140 can directly contact the positive substrate member 120 and the negative substrate member 130, so as to transfer the heat generated by the laser chip 110 to the heat dissipation medium and ensure the electrical insulation between the light source assembly 100 and the heat dissipation medium. Similarly, the bonding arrangement of the insulating member 140 and the substrate member can be achieved by welding. In the production and processing of the light source assembly 100, the laser chip 110 can be first welded to the positive substrate member 120 and the negative substrate member 130, and then the insulating member 140 can be welded to the positive substrate member 120 and the negative substrate member 130, so as to improve the processing efficiency of the light source assembly 100.

[0085] By setting an insulating member 140 in the light source assembly 100, and respectively fitting the insulating member 140 to the end of the positive substrate member 120 facing away from the laser chip 110 and the end of the negative substrate member 130 facing away from the laser chip 110, the insulating member 140 can achieve the insulation function between the light source assembly 100 and the heat dissipation medium, and at the same time can also transfer the heat generated by the laser chip 110 to the heat dissipation medium to ensure the stable operation of the laser chip 110.

[0086] In order to ensure the heat conduction function of the insulating member 140, the present application further proposes an implementation method, see Fig. 9 , Fig. 9The schematic diagram of the structure of the light source assembly provided by the embodiment of the present application is shown. As shown in the figure, the insulating member 140 includes a first insulating portion 141 and a second insulating portion 142. The first insulating portion 141 is bonded to an end of the positive substrate member 120 away from the emission surface of the laser chip 110. The second insulating portion 142 is bonded to an end of the negative substrate member 130 away from the emission surface of the laser chip 110. The first insulating portion 141 and the second insulating portion 142 are bonded to or separated from each other on both sides.

[0087] During the processing of the light source assembly 100, the laser chip 110 is first welded or directly metal-bonded to the positive substrate component 120 and the negative substrate component 130 respectively. Since the positive substrate component 120 and the negative substrate component 130 have been fixed, when the insulating component 140 is welded or metal-bonded to the positive substrate component 120 and the negative substrate component 130 respectively, it becomes more difficult to weld or metal-bond the insulating component 140 to the positive substrate component 120 and the negative substrate component 130 at the same time, and the welding accuracy or metal bonding accuracy requirements of the laser cannot be met, resulting in a reduction in the quality of the light source assembly 100 and a reduction in the thermal conductivity of the insulating component 140.

[0088] Therefore, in order to ensure the thermal conductivity of the insulating part 140, the insulating part 140 is set to a first insulating part 141 and a second insulating part 142, and then the first insulating part 141 is bonded to the end of the positive substrate part 120 away from the emission surface of the laser chip 110, and the second insulating part 142 is bonded to the end of the negative substrate part 130 away from the emission surface of the laser chip 110, so that the first insulating part 141 absorbs the heat in the positive substrate part 120, and the second insulating part 142 absorbs the heat in the negative substrate part 130. In this way, taking welding as a fitting setting as an example, during the processing, the first insulating part 141 and the positive substrate component 120 are welded first, and then the second insulating part 142 and the negative substrate component 130 are welded, which can facilitate the welding processing between the first insulating part 141 and the positive substrate component 120 and between the second insulating part 142 and the negative substrate component 130, and improve the welding accuracy. Then, the positive substrate component 120, the laser chip 110 and the negative substrate component 130 are welded respectively, and finally the first insulating part 141 and the second insulating part 142 are welded on both sides facing each other, or the first insulating part 141 and the second insulating part 142 are independently set, so as to ensure the heat dissipation function of the first insulating part 141 to the positive substrate component 120 and the second insulating part 142 to the negative substrate component 130.

[0089] By fitting the first insulating part 141 to the end of the positive substrate component 120 facing away from the emission surface of the laser chip 110, and fitting the second insulating part 142 to the end of the negative substrate component 130 facing away from the emission surface of the laser chip 110, the welding accuracy or metal bonding accuracy between the first insulating part 141 and the positive substrate component 120 and between the second insulating part 142 and the negative substrate component 130 can be improved, respectively, and the contact area between the first insulating part 141 and the positive substrate component 120 and between the second insulating part 142 and the negative substrate component 130 can be ensured, ensuring the normal thermal conductivity function of the first insulating part 141 and the second insulating part 142, so that the laser chip 110 can work normally.

[0090] In order to enhance the reliability of the light source assembly 100, the present application further proposes an implementation method, please continue to refer to Figure 8 The positive substrate member 120 and the negative substrate member 130 are respectively fixed by welding or direct metal bonding to the two sides of the laser chip 110. A groove 143 is provided on the insulating member 140 in the area opposite to the laser chip 110, and the notch of the groove 143 faces the laser chip 110. The groove 143 is configured to receive the solder melted by the high temperature.

[0091] In order to improve the stability of the connection between the laser chip 110 and the positive substrate member 120 and the negative substrate member 130, the two sides of the laser chip 110 are respectively welded and fixed to the positive substrate member 120 and the negative substrate member 130 by solder, or the positive substrate member 120 and the laser chip 110 as well as the negative substrate member 130 and the laser chip 110 are directly metal-bonded and fixed by interface solder, so that the positive substrate member 120 and the negative substrate member 130 can form stable positive and negative electrodes on both sides of the laser chip 110, thereby enabling the laser chip 110 to emit laser more stably.

[0092] In this case, since the laser chip 110 generates a large amount of heat during operation, the solder used for soldering and fixing will melt. When the solder melts and accumulates at the bottom of the laser chip 110 to connect the positive substrate component 120 and the negative substrate component 130, it will cause a short circuit and burn the laser chip 110, causing the laser chip 110 to be unable to emit laser normally.

[0093] Based on this, a groove 143 is provided on the insulating member 140 to accommodate the solder melted by high temperature, so as to prevent the positive substrate member 120 and the negative substrate member 130 from being connected. Specifically, the groove 143 is provided at a position of the insulating member 140 corresponding to the laser chip 110, and the notch of the groove 143 faces the laser chip 110, so that after the solder on both sides of the laser chip 110 is melted, it can flow into the groove 143 along the positive substrate member 120 and the negative substrate member 130 toward the laser chip 110, so as to prevent the melted solder from accumulating at the bottom of the laser chip 110 and prevent the occurrence of a short circuit.

[0094] By setting a notch toward the groove 143 of the laser chip 110 at the position of the insulating part 140 corresponding to the laser chip 110, the solder melted due to high temperature on both sides of the laser chip 110 can flow into the groove 143, thereby avoiding excessive overflow of the molten solder to cause the laser chip 110 to be short-circuited, thereby improving the reliability of the light source assembly 100.

[0095] According to another aspect of the embodiment of the present application, a semiconductor laser is also provided. Fig.10 , Fig.10 The schematic diagram of the structure of the semiconductor laser provided by the embodiment of the present invention is shown, and the semiconductor laser 10 includes a base 200 (the heat dissipation medium mentioned above) and at least two light source assemblies 100 provided by the above embodiments. Between two adjacent light source assemblies 100, a side of the positive substrate 120 of one of them that faces away from the laser chip 110 is arranged in abutment with a side of the negative substrate 130 of the other that faces away from the laser chip 110. Multiple light source assemblies 100 are arranged in an arc structure along the circumferential direction and are arranged on the base.

[0096] A plurality of light source assemblies 100 are connected in sequence along the circumferential direction to form an arc-shaped laser structure. The connection between two adjacent light source assemblies 100 realizes the function of electrical connection, thereby achieving the effect of connecting the positive and negative poles of the plurality of light source assemblies 100 in series. During the use of the semiconductor laser 10, it is only necessary to connect the positive and negative voltages to the positive substrate component 120 and the negative substrate component 130 at both ends of the arc structure respectively, so that the laser chip 110 in each light source assembly 100 can emit laser.

[0097] Furthermore, taking welding as an example, when the side of the positive substrate component 120 of one of the two adjacent light source components 100 that faces away from the laser chip 110 is bonded to the side of the negative substrate component 130 of the other that faces away from the laser chip 110, the contact area between the light source components 100 can be increased, the amount of solder required for welding can be reduced, the risk of solder overflow can be reduced, and the reliability of the semiconductor laser 10 can be improved.

[0098] The base 200 can be a heat sink made of copper material, and its shape matches the arc-shaped laser to absorb the heat generated by the laser chip 110 in each light source assembly 100, and dissipate the heat of the laser chip 110 to maintain the stable operation of the laser chip 110. In some embodiments, when solder is used to weld and fix the base 200 and the light source assemblies 100, the melting point of the solder is lower than that of the solder used between the light source assemblies 100 to avoid the high temperature during welding affecting the solder between the light source assemblies 100.

[0099] Specifically, when the inclined surfaces of the positive substrate component 120 and / or the negative substrate component 130 in each light source component 100 form an acute angle with the emitting surface of the laser chip 110, multiple light source components 100 form a semiconductor laser 10 with an arc-shaped concave structure along the circumferential direction. The semiconductor laser 10 is used in a semiconductor-pumped solid-state laser, and a cylindrical crystal rod is inserted along the axial direction on the inner side of the arc-shaped concave structure, so that the laser chip 110 of each light source component 100 in the semiconductor laser 10 can emit a laser with a fast axis of 70° and a slow axis of 10° to the crystal rod, and the fast-axis laser is incoherently superimposed on the surface of the crystal rod, uniformly incident on the surface and interior of the crystal rod, and absorbed by the crystal rod to generate a solid-state laser with high beam quality, thereby meeting the requirements of the solid-state laser.

[0100] In some embodiments, a semicircular semiconductor laser 10 composed of multiple light source assemblies 100 is taken as an example. Fig.11 , Fig.11 A structural schematic diagram of a laser emitting device is shown. As shown in the figure, two semiconductor lasers 10 are arranged on a heat sink 20. The two semiconductor lasers 10 are respectively arranged on both sides of the heat sink 20 facing each other and offset, and one side of a base 200 in the semiconductor laser 10 is connected to the heat sink 20, so that the two semiconductor lasers 10 are vertically arranged on the heat sink 20, so that the heat generated by the light source assembly 100 is finally transmitted to the heat sink 20. In this way, the same crystal rod can be inserted into the two semiconductor lasers 10, so that the lasers emitted by the two semiconductor lasers 10 can share the same crystal rod, and lasers are emitted to the crystal rod from both sides, so that the crystal rod absorbs and generates more uniform solid lasers to meet the needs of different solid lasers.

[0101] In some embodiments, multiple light source assemblies 100 may also form a circular semiconductor laser 10, see Fig.12 , Fig.12The schematic diagram of the structure of a circular semiconductor laser is shown. As shown in the figure, a plurality of light source assemblies 100 are connected in sequence to form a circular structure laser. The connection of two adjacent light source assemblies 100 realizes the function of electrical connection, thereby realizing the effect of connecting the positive and negative electrodes of the plurality of light source assemblies 100 in series. The circular structure laser is arranged on a base 200 of an annular structure, and the base 200 matches the circular structure laser to absorb the heat generated by the laser chip 110 in each light source assembly 100. In this way, a cylindrical crystal rod is inserted into the inner circle of the circular semiconductor laser 10, so that the laser emitted by the laser chip 120 can be incoherently superimposed on the surface of the crystal rod, uniformly incident on the surface and the inside of the crystal rod, and absorbed by the crystal rod. Further, a plurality of circular semiconductor lasers 10 are stacked along a direction perpendicular to the direction in which the laser chip 110 emits the laser, so as to form a semiconductor laser side pump module. The crystal rod is inserted into the semiconductor laser side pump module, so that the laser emitted by the plurality of circular semiconductor lasers 10 can be incoherently superimposed on the surface of the crystal rod.

[0102] See also Fig.13 , Fig.13 A schematic diagram of the structure of another semiconductor laser provided by an embodiment of the present invention is shown. As shown in the figure, when the inclined surface of the positive substrate member 120 and / or the negative substrate member 130 in each light source assembly 100 forms an obtuse angle with the emitting surface of the laser chip 110, multiple light source assemblies 100 form a semiconductor laser 10 with an arc-shaped convex structure along the circumferential direction. The semiconductor laser 10 is used in laser lighting and laser radar, and can emit a divergent arc laser with a vertical angle of 30° and a horizontal angle of 120° to meet the needs of laser lighting and laser addressing.

[0103] In some embodiments, a semiconductor laser 10 composed of multiple light source assemblies 100 can be realized by using a light source assembly 100 in which both the positive substrate member 120 and the negative substrate member 130 are provided with bevels, a light source assembly 100 in which only the positive substrate member 120 or the negative substrate member 130 is provided with bevels, and a light source assembly 100 in which both the positive substrate member 120 and the negative substrate member 130 are configured as rectangles, thereby obtaining a semiconductor laser 10 in which the laser chip 110 emits laser at different angles, so that the laser is emitted according to the expected design to meet different laser requirements.

[0104] In the semiconductor laser 10 provided in the embodiment of the present application, by arranging a plurality of light source assemblies 100 in a circumferential direction, and in two adjacent light source assemblies 100, a surface of one of the positive substrate components 120 facing away from the laser chip 110 is bonded to a surface of the other negative substrate component 130 facing away from the laser chip 110, each light source assembly 100 can form a semiconductor laser 10 with an arc-shaped concave or convex structure, and the contact area of ​​the substrate components between the two adjacent light source assemblies 100 can be increased, the series resistance of the semiconductor laser 10 can be reduced, and the heat generated by the semiconductor laser 10 can be reduced. Furthermore, the amount of solder required for welding or direct metal bonding between the two adjacent light source assemblies 100 can be reduced, and the risk of solder overflowing after melting at high temperature can be reduced, thereby improving the reliability of the semiconductor laser 10.

[0105] In order to improve the reliability of the semiconductor laser 10, the present application further proposes an implementation mode, whereby between two adjacent light source assemblies 100, a side of the positive substrate member 120 of one of them facing away from the laser chip 110 is fixed to the negative substrate member 130 of the other by soldering or direct metal bonding.

[0106] The positive substrate component 120 and the negative substrate component 130 of two adjacent light source assemblies 100 are welded and fixed, or the positive substrate component 120 and the negative substrate component 130 of two adjacent light source assemblies 100 are directly metal-bonded and fixed, so that the connection between the two adjacent light source assemblies 100 can be made more firm, and the structural stability of the semiconductor laser 10 can be improved. In addition, the direct metal bonding can be realized by selecting the interface solder, which effectively avoids the failure of the solder at high temperature. Specifically, gold-tin solder sheets or prefabricated gold-tin films and other gold-tin solders can be used for welding or direct metal bonding. Since the gold-tin solder has a high melting point and excellent electrical conductivity, thermal conductivity and corrosion resistance, it can not only improve the reliability of the solder, but also reduce the risk of solder overflow, and avoid the situation where the solder melts at high temperature and affects the function of the light source assembly 100. By welding or directly metal-bonding the positive substrate component 120 and the negative substrate component 130 of two adjacent light source assemblies 100 with solder, the connection stability between the light source assemblies 100 can be improved, thereby improving the reliability of the semiconductor laser 10.

Claims

1. A semiconductor laser, characterized in that: The semiconductor laser comprises a heat dissipation base and at least two light source components, wherein the at least two light source components are arranged in a circumferential direction to form an arc structure and are disposed on the heat dissipation base; The light source assembly includes a laser chip, a positive substrate component and a negative substrate component; Two sides of the laser chip are respectively bonded to the positive substrate and the negative substrate, and the laser chip is used to emit laser; At least one of the positive substrate member and the negative substrate member has a surface facing away from the laser chip configured as an inclined surface; Between two adjacent light source assemblies, a surface of the positive substrate member of one facing away from the laser chip is bonded to a surface of the negative substrate member of the other facing away from the laser chip.

2. The semiconductor laser according to claim 1, characterized in that The angle between the plane where the emission surface of the laser chip is located and the inclined surface is an acute angle.

3. The semiconductor laser according to claim 1, characterized in that The angle between the plane where the emitting surface of the laser chip is located and the inclined surface is an obtuse angle.

4. The semiconductor laser according to claim 1, characterized in that The front substrate component includes a first main body component and a first intermediate component; The first main body component is a rectangular parallelepiped, one side of the first main body component is bonded to the laser chip, and the other side of the first main body component is bonded to the first intermediate component; A surface of the first intermediate component facing away from the first main body component is the inclined surface.

5. The semiconductor laser according to claim 1, characterized in that The negative substrate member includes a second main body member and a second intermediate member; The second main body component is a rectangular parallelepiped, one side of the second main body component is bonded to the laser chip, and the other side of the second main body component is bonded to the second intermediate component; A surface of the second intermediate component facing away from the second main body component is the inclined surface.

6. The semiconductor laser according to claim 1, characterized in that The semiconductor laser further includes an insulating member; The insulating member is respectively arranged in contact with one end of the positive substrate member away from the emitting surface of the laser chip and one end of the negative substrate member away from the emitting surface of the laser chip.

7. The semiconductor laser according to claim 6, characterized in that The insulating member comprises a first insulating portion and a second insulating portion; The first insulating portion is disposed in contact with an end of the front substrate member away from the emitting surface of the laser chip; The second insulating portion is disposed in contact with an end of the negative substrate member that is away from the emitting surface of the laser chip; The first insulating portion and the second insulating portion are arranged on opposite sides thereof in close contact with each other or in separate contact.

8. The semiconductor laser according to claim 6 or 7, characterized in that: The positive substrate component and the negative substrate component are respectively fixed to two sides of the laser chip by soldering or direct metal bonding; A groove is formed on the insulating member in an area opposite to the laser chip, with the notch of the groove facing the laser chip, and the groove is configured to receive solder melted by high temperature.

9. The semiconductor laser according to claim 1, characterized in that Between two adjacent light source assemblies, the positive substrate component of one and the negative substrate component of the other are fixed by soldering or direct metal bonding.

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