A semiconductor laser element provided with a triplet exciton-rich layer

Abstract

The application provides a semiconductor laser element provided with a triplet exciton enrichment layer, and relates to the technical field of semiconductor photoelectric devices, and sequentially comprises a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer from bottom to top; the triplet exciton enrichment layer is arranged between the active layer and the upper wave layer and between the active layer and the lower waveguide layer; compared with the prior art, the triplet exciton enrichment layer is arranged between the active layer and the lower wave layer and between the lower confinement layer and the lower waveguide layer; in the laser element, the triplet exciton is enriched in the active layer through energy transfer, and is converted into a radiative monopole exciton through spin coupling inversion, so that the electron-hole wave function in the active layer realizes a radiative recombination efficiency close to 100%, the confinement factor is enhanced, continuous oscillation is realized, the excitation threshold of the laser element is reduced, and the optical power and the slope efficiency of the laser element are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor optoelectronic devices, in particular to a semiconductor laser element provided with a three-line state exciton enrichment layer. BACKGROUND

[0002] Lasers are widely used in laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are various. The main types of lasers include solid-state, gas, liquid, semiconductor and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long service life, simple and compact structure, and small size. There are great differences between lasers and nitride semiconductor light-emitting diodes. 1) Laser is generated by stimulated radiation of carriers, with small spectral half-width and high brightness. The output power of a single laser can reach W level, while the output power of a single nitride semiconductor light-emitting diode is in mW level. 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency droop effect. 3) Light-emitting diode is self-transition radiation without external action, and the non-coherent light jumps from high energy level to low energy level. Laser is stimulated transition radiation, and the energy of the induced photon should be equal to the energy level difference of the electron transition. The generated photon and the induced photon are homophase coherent light. 4) Different principles: light-emitting diode is under the action of external voltage, and electron-hole transition occurs in quantum well or p-n junction to produce radiation recombination. Laser needs to meet the lasing conditions, and the carrier inversion distribution in the active region must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, propagates in the gain medium, and amplifies the light. When the threshold condition is met, the gain is greater than the loss, and finally the laser is output. The nitride semiconductor laser has the following problems: 1) strong polarization effect caused by large internal lattice mismatch and large strain, strong QCSE quantum confinement Stark effect, which limits the improvement of the electric lasing gain of the laser; 2) large activation energy of Mg acceptor in p-type semiconductor, low ionization efficiency, far lower hole concentration than electron concentration, far smaller hole mobility than electron mobility, resulting in serious asymmetry and mismatch of electron and hole in quantum well, electron leakage and carrier delocalization, more difficult hole transport in quantum well, uneven carrier injection, uneven gain, broadened laser gain spectrum, and decreased peak gain. 3) increased valence band step difference, more difficult hole transport in quantum well, uneven carrier injection, and uneven gain. SUMMARY

[0003] The application aims to provide a semiconductor laser element provided with a triplet exciton enrichment layer, and solve the problems in the prior art.

[0004] A semiconductor laser element provided with a triplet exciton enrichment layer, sequentially comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, an upper confinement layer, and the triplet exciton enrichment layer is arranged between the active layer and the lower wave layer and between the lower confinement layer and the lower waveguide layer.

[0005] As a preferred technical solution of the application, the triplet exciton enrichment layer is any one or any combination of PtSe2, MoSi2N4, Bi2O2Se, BP-InSe, Sb2S3, and In2S3-CdS.

[0006] As a preferred technical solution of the application, the triplet exciton enrichment layer includes the following binary combinations of hexagonal nanosheets or hollow nanostructures: PtSe2 / MoSi2N4, PtSe2 / Bi2O2Se, PtSe2 / BP-InSe, PtSe2 / Sb2S3, PtSe2 / In2S3-CdS, MoSi2N4 / Bi2O2Se, MoSi2N4 / BP-InSe, MoSi2N4 / Sb2S3, MoSi2N4 / In2S3-CdS, Bi2O2Se / BP-InSe, Bi2O2Se / Sb2S3, Bi2O2Se / In2S3-CdS, BP-InSe / Sb2S3, BP-InSe / In2S3-CdS, Sb2S3 / In2S3-CdS.

[0007] As a preferred technical solution of the present application, any combination of the triplet exciton enrichment layer includes the following ternary combinations of hexagonal nanosheets or hollow nanostructures: PtSe2 / MoSi2N4 / Bi2O2Se, PtSe2 / MoSi2N4 / BP-InSe, PtSe2 / MoSi2N4 / Sb2S3, PtSe2 / MoSi2N4 / In2S3-CdS, PtSe2 / Bi2O2Se / BP-InSe, PtSe2 / Bi2O2Se / Sb2S3, PtSe2 / Bi2O2Se / In2S3-CdS, PtSe2 / BP-InSe / Sb2S3, PtSe2 / BP-InSe / In2S3-CdS, PtSe2 / Sb2S3 / In2S3-CdS, MoSi2N4 / Bi2O2Se / BP-InSe, MoSi2N4 / Bi2O2Se / Sb2S3, MoSi2N4 / Bi2O2Se / In2S3-CdS, MoSi2N4 / BP-InSe / Sb2S3, MoSi2N4 / BP-InSe / In2S3-CdS, MoSi2N4 / Sb2S3 / In2S3-CdS, Bi2O2Se / BP-InSe / Sb2S3, Bi2O2Se / BP-InSe / In2S3-CdS, Bi2O2Se / Sb2S3 / In2S3-CdS, BP-InSe / Sb2S3 / In2S3-CdS.

[0008] As a preferred technical solution of the present application, any combination of the triplet exciton enrichment layer includes the following ternary combinations of hexagonal nanosheets or hollow nanostructures: PtSe2 / MoSi2N4 / Bi2O2Se, PtSe2 / MoSi2N4 / BP-InSe, PtSe2 / MoSi2N4 / Sb2S3, PtSe2 / MoSi2N4 / In2S3-CdS, PtSe2 / Bi2O2Se / BP-InSe, PtSe2 / Bi2O2Se / Sb2S3, PtSe2 / Bi2O2Se / In2S3-CdS, PtSe2 / BP-InSe / Sb2S3, PtSe2 / BP-InSe / In2S3-CdS, PtSe2 / Sb2S3 / In2S3-CdS, MoSi2N4 / Bi2O2Se / BP-InSe, MoSi2N4 / Bi2O2Se / Sb2S3, MoSi2N4 / Bi2O2Se / In2S3-CdS, MoSi2N4 / BP-InSe / Sb2S3, MoSi2N4 / BP-InSe / In2S3-CdS, MoSi2N4 / Sb2S3 / In2S3-CdS, Bi2O2Se / BP-InSe / Sb2S3, Bi2O2Se / BP-InSe / In2S3-CdS, Bi2O2Se / Sb2S3 / In2S3-CdS, BP-InSe / Sb2S3 / In2S3-CdS.

[0009] PtSe2 / Bi2O2Se / BP-InSe / In2S3-CdS, PtSe2 / BP-InSe / Sb2S3 / In2S3-CdS,

[0010] MoSi2N4 / Bi2O2Se / BP-InSe / Sb2S3, MoSi2N4 / Bi2O2Se / BP-InSe / In2S3-CdS,

[0011] MoSi2N4 / BP-InSe / Sb2S3 / In2S3-CdS, Bi2O2Se / BP-InSe / Sb2S3 / In2S3-CdS.

[0012] NaBiTiO3 / Ti3C2T x / CuInP2S6 / WTe2,CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2。

[0013] As a preferred technical solution of the application, any combination of the triplet exciton enrichment layer includes the following five, six combinations of hexagonal nanosheets or hollow nanostructures: PtSe2 / MoSi2N4 / Bi2O2Se / BP-InSe / Sb2S3, PtSe2 / MoSi2N4 / Bi2O2Se / BP-InSe / In2S3-CdS, PtSe2 / MoSi2N4 / Bi2O2Se / Sb2S3 / In2S3-CdS, PtSe2 / MoSi2N4 / BP-InSe / Sb2S3 / In2S3-CdS, PtSe2 / Bi2O2Se / BP-InSe / Sb2S3 / In2S3-CdS, MoSi2N4 / Bi2O2Se / BP-InSe / Sb2S3 / In2S3-CdS, PtSe2 / MoSi2N4 / Bi2O2Se / BP-InSe / Sb2S3 / In2S3-CdS.

[0014] As a preferred technical solution of the application, the triplet exciton enrichment layer is provided between the active layer and the lower wave layer, and between the lower confinement layer and the lower waveguide layer. The triplet exciton enrichment layer enriches triplet excitons in the active layer through energy transfer in the laser element, and converts them into radiative monopole excitons through spin coupling inversion, so that the electron-hole wave function in the active layer realizes a radiative recombination efficiency close to 100%, enhances the confinement factor, realizes continuous oscillation, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

[0015] As a preferred technical solution of the application, the thickness of the triplet exciton enrichment layer (107) is 5-500 nm.

[0016] As a preferred technical solution of the application, the lower confinement layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm -3 ; the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, InGaN, AlInGaN, with a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm -3The electron blocking layer and the upper confining layer are any one or any combination of GaN, AlGaN, AlInGaN, AlN, AlInN, with a thickness of 20-1000nm and a Mg doping concentration of 1E18-1E20 cm -3 .

[0017] As a preferred technical solution of the present application, the substrate comprises any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0018] Compared with the prior art, the present application has the following beneficial effects:

[0019] In the scheme of the present application:

[0020] Compared with the prior art, the three-line state exciton enrichment layer is arranged between the lower waveguide layer and the lower confining layer and between the active layer and the lower waveguide layer, the three-line state exciton is enriched in the active layer through energy transfer in the laser element, and is converted into a radiative light-emitting single-line state exciton through spin coupling flip, so that the electron-hole wave function in the active layer realizes a radiative recombination efficiency close to 100%, the confinement factor is enhanced, continuous oscillation is realized, the excitation threshold of the laser element is reduced, and the optical power and the slope efficiency of the laser element are improved. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 A structure schematic diagram of a semiconductor laser element provided by the present application is shown.

[0022] Indicated in the figure:

[0023] 100: substrate; 101: lower confining layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer, 105: electron blocking layer, 106: upper confining layer, 107: three-line state exciton enrichment layer. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments.

[0025] Therefore, the following detailed description of the embodiments of the application is not intended to limit the scope of the application as claimed, but merely represents some embodiments of this application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application.

[0026] It should be noted that the embodiments in the present application and the features and technical solutions in the embodiments can be combined with each other without conflict.

[0027] Embodiment 1

[0028] Please refer to Figure 1 The embodiment provides a technical solution: a semiconductor laser element provided with a triplet exciton enrichment layer, which comprises, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confinement layer 106, and a triplet exciton enrichment layer 107 between the active layer 103 and the lower wave layer 102 and between the lower confinement layer 101 and the lower waveguide layer 102.

[0029] The triplet exciton enrichment layer 107 is a hexagonal nanoplate or hollow nanostructure of any one of PtSe2, MoSi2N4, Bi2O2Se, BP-InSe, Sb2S3, In2S3-CdS.

[0030] The triplet exciton enrichment layer 107 between the active layer 103 and the lower wave layer 102 and between the lower confinement layer 101 and the lower waveguide layer 102 makes triplet excitons enriched in the active layer through energy transfer in the laser element, and converts the triplet excitons into radiative monopole excitons through spin coupling flip, so that the electron-hole wave function in the active layer realizes a radiative recombination efficiency close to 100%, enhances the confinement factor, realizes continuous oscillation, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

[0031] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm -3 The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm -3The electron blocking layer 105 and the upper confining layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, AlInN, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm -3 .

[0032] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0033] Embodiment 2

[0034] Please refer to Figure 1 The embodiment provides a technical scheme of a semiconductor laser element provided with a triplet exciton enrichment layer. The semiconductor laser element provided with a triplet exciton enrichment layer sequentially includes a substrate 100, a lower confining layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confining layer 106, and a triplet exciton enrichment layer 107 between the active layer 103 and the lower wave layer 102 and between the lower waveguide layer 102 and the lower confining layer 101.

[0035] The triplet exciton enrichment layer 107 is provided between the active layer 103 and the lower wave layer 102 and between the lower confining layer 101 and the lower waveguide layer 102. The triplet exciton enrichment layer 107 enriches triplet excitons in the active layer through energy transfer in the laser element, and converts the triplet excitons into radiative singlet excitons through spin coupling inversion, so that the electron-hole wave function in the active layer achieves a radiative recombination efficiency close to 100%, enhances the confinement factor, realizes continuous oscillation, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

[0036] Any combination of the triplet exciton enrichment layer includes the following binary combinations of hexagonal nanosheets or hollow nanostructures: PtSe2 / MoSi2N4, PtSe2 / Bi2O2Se, PtSe2 / BP-InSe, PtSe2 / Sb2S3, PtSe2 / In2S3-CdS, MoSi2N4 / Bi2O2Se, MoSi2N4 / BP-InSe, MoSi2N4 / Sb2S3, MoSi2N4 / In2S3-CdS, Bi2O2Se / BP-InSe, Bi2O2Se / Sb2S3, Bi2O2Se / In2S3-CdS, BP-InSe / Sb2S3, BP-InSe / In2S3-CdS, Sb2S3 / In2S3-CdS.

[0037] The lower confining layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm -3 The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, AlInGaN, with a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm -3 The electron blocking layer 105 and the upper confining layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, AlInN, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm -3 .

[0038] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0039] Embodiment 3

[0040] Please refer to Figure 1 The embodiment provides a technical scheme: a semiconductor laser element provided with a triplet exciton enrichment layer, a semiconductor laser element provided with a triplet exciton enrichment layer, which sequentially includes a substrate 100, a lower confining layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confining layer 106, and a triplet exciton enrichment layer 107 between the lower waveguide layer 102 and the lower confining layer 101 and between the active layer 103 and the lower waveguide layer 102.

[0041] A three-line state exciton enrichment layer 107 is arranged between the lower waveguide layer 102 and the lower confinement layer 101 and between the active layer 103 and the lower waveguide layer 102. The three-line state exciton enrichment layer 107 enriches three-line state excitons in the active layer through energy transfer in the laser element, and converts them into radiative single-line state excitons through spin coupling inversion, so that the electron-hole wave function in the active layer realizes a radiative recombination efficiency close to 100%, enhances the confinement factor, realizes continuous oscillation, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

[0042] Any combination of the three-line state exciton enrichment layer 107 includes the following ternary combinations of hexagonal nanosheets or hollow nanostructures: PtSe2 / MoSi2N4 / Bi2O2Se, PtSe2 / MoSi2N4 / BP-InSe, PtSe2 / MoSi2N4 / Sb2S3, PtSe2 / MoSi2N4 / In2S3-CdS, PtSe2 / Bi2O2Se / BP-InSe, PtSe2 / Bi2O2Se / Sb2S3, PtSe2 / Bi2O2Se / In2S3-CdS, PtSe2 / BP-InSe / Sb2S3, PtSe2 / BP-InSe / In2S3-CdS, PtSe2 / Sb2S3 / In2S3-CdS, MoSi2N4 / Bi2O2Se / BP-InSe, MoSi2N4 / Bi2O2Se / Sb2S3, MoSi2N4 / Bi2O2Se / In2S3-CdS, MoSi2N4 / BP-InSe / Sb2S3, MoSi2N4 / BP-InSe / In2S3-CdS, MoSi2N4 / Sb2S3 / In2S3-CdS, Bi2O2Se / BP-InSe / Sb2S3, Bi2O2Se / BP-InSe / In2S3-CdS, Bi2O2Se / Sb2S3 / In2S3-CdS, BP-InSe / Sb2S3 / In2S3-CdS.

[0043] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm -3 The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm -3; the electron blocking layer 105 and the upper confining layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, AlInN, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm -3 .

[0044] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0045] Embodiment 4

[0046] Please refer to Figure 1 The embodiment provides a technical scheme: a semiconductor laser element provided with a triplet exciton enrichment layer, a semiconductor laser element provided with a triplet exciton enrichment layer, which includes a substrate 100, a lower confining layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confining layer 106 from bottom to top.

[0047] The active layer 103 and the lower wave layer 102 and the lower confining layer 101 and the lower waveguide layer 102 are provided with a triplet exciton enrichment layer 107, which enriches triplet excitons in the active layer through energy transfer in the laser element, and converts them into radiative single excitons through spin coupling flip, so that the electron-hole wave function in the active layer realizes a radiative recombination efficiency close to 100%, enhances the confinement factor, realizes continuous oscillation, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

[0048] Any combination of the triplet exciton enrichment layer 107 includes the following four combinations of hexagonal nanosheets or hollow nanostructures: PtSe2 / MoSi2N4 / Bi2O2Se / BP-InSe, PtSe2 / MoSi2N4 / Bi2O2Se / Sb2S3,

[0049] PtSe2 / MoSi2N4 / Bi2O2Se / In2S3-CdS, PtSe2 / Bi2O2Se / BP-InSe / Sb2S3,

[0050] PtSe2 / Bi2O2Se / BP-InSe / In2S3-CdS, PtSe2 / BP-InSe / Sb2S3 / In2S3-CdS,

[0051] MoSi2N4 / Bi2O2Se / BP-InSe / Sb2S3, MoSi2N4 / Bi2O2Se / BP-InSe / In2S3-CdS,

[0052] MoSi2N4 / BP-InSe / Sb2S3 / In2S3-CdS, Bi2O2Se / BP-InSe / Sb2S3 / In2S3-CdS.

[0053] NaBiTiO3 / Ti3C2T x / CuInP2S6 / WTe2, CsBiNb2O7 / Ti3C2T x / CuInP2S6 / WTe2.

[0054] NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / CuInP2S6, NaBiTiO3 / CsBiNb2O7 / Ti3C2T x / WTe2.

[0055] The lower confining layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm -3 ; the lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, AlInGaN, with a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm -3 ; the electron blocking layer 105 and the upper confining layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, AlInN, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm -3 .

[0056] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0057] Example 5

[0058] Referring to Figure 1 The embodiment provides a technical scheme: a semiconductor laser element provided with a triplet exciton enrichment layer, the semiconductor laser element provided with a triplet exciton enrichment layer sequentially comprises a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confinement layer 106, and a triplet exciton enrichment layer 107 arranged between the lower waveguide layer 102 and the lower confinement layer 101 and between the active layer 103 and the lower waveguide layer 102.

[0059] The triplet exciton enrichment layer 107 is arranged between the active layer 103 and the lower wave layer 102 and between the lower confinement layer 101 and the lower waveguide layer 102, the triplet exciton enrichment layer 107 enriches triplet excitons in the active layer through energy transfer in the laser element, and converts the triplet excitons into radiative monopole excitons through spin coupling inversion, so that the electron-hole wave function in the active layer realizes a radiative recombination efficiency close to 100%, the confinement factor is enhanced, continuous oscillation is realized, the excitation threshold of the laser element is reduced, and the optical power and the slope efficiency of the laser element are improved.

[0060] Any combination of the triplet exciton enrichment layer 107 includes the following five-membered, six-membered combination of hexagonal nanosheets or hollow nanostructures: PtSe2 / MoSi2N4 / Bi2O2Se / BP-InSe / Sb2S3, PtSe2 / MoSi2N4 / Bi2O2Se / BP-InSe / In2S3-CdS, PtSe2 / MoSi2N4 / Bi2O2Se / Sb2S3 / In2S3-CdS, PtSe2 / MoSi2N4 / BP-InSe / Sb2S3 / In2S3-CdS, PtSe2 / Bi2O2Se / BP-InSe / Sb2S3 / In2S3-CdS, MoSi2N4 / Bi2O2Se / BP-InSe / Sb2S3 / In2S3-CdS, PtSe2 / MoSi2N4 / Bi2O2Se / BP-InSe / Sb2S3 / In2S3-CdS.

[0061] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, and has a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm -3 The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, and have a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm -3The electron blocking layer 105 and the upper confining layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, AlInN, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm -3 .

[0062] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0063] Experimental Example 1:

[0064] The technical solution in Example 1 is used to conduct green laser experiments, and the triplet exciton enrichment layer uses PtSe2 to conduct experiments.

[0065] Experimental Example 2:

[0066] The technical solution in Example 2 is used to conduct green laser experiments, and the triplet exciton enrichment layer uses PtSe2 / MoSi2N4 to conduct experiments.

[0067] Experimental Example 3:

[0068] The technical solution in Example 3 is used to conduct green laser experiments, and the triplet exciton enrichment layer uses PtSe2 / MoSi2N4 / Bi2O2Se to conduct experiments.

[0069] Experimental Example 4:

[0070] The technical solution in Example 4 is used to conduct green laser experiments, and the triplet exciton enrichment layer uses PtSe2 / MoSi2N4 / Bi2O2Se / BP-InSe to conduct experiments.

[0071] Experimental Example 5:

[0072] The technical solution in Example 5 is used to conduct green laser experiments, and the triplet exciton enrichment layer uses PtSe2 / MoSi2N4 / Bi2O2Se / BP-InSe / Sb2S3 to conduct experiments.

[0073] The data of Experimental Examples 1-5 are as follows:

[0074]

[0075] The average values of the data of Experimental Examples 1-5 and the comparison data of traditional laser components are as follows:

[0076]

[0077]

[0078] The slope efficiency of the green laser element is improved from 0.36 / A to 0.69 W / A, an improvement of 92%; the threshold current density is reduced from 4.5 kA / cm 2 to 1.3 kA / cm 2 , a reduction of 71%, the optical power is improved from 0.51 W to 0.9 W, an improvement of 82%; the confinement factor is improved from 1.86% to 2.91%, an improvement of 56%.

[0079] Compared with the prior art, the three-line state exciton enrichment layer is arranged between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer, the three-line state exciton is enriched in the active layer through energy transfer in the laser element, and is converted into a single-line state exciton through spin coupling inversion to realize radiative light emission, so that the electron-hole wave function in the active layer realizes a radiative recombination efficiency close to 100%, the confinement factor is enhanced, continuous oscillation is realized, the excitation threshold of the laser element is reduced, and the optical power and the slope efficiency of the laser element are improved.

[0080] The above embodiments are only used to illustrate the present application and not to limit the technical solutions described in the present application. Although the present application has been described in detail with reference to the above embodiments, the present application is not limited to the above specific embodiments, and therefore any modification or equivalent replacement of the present application; all technical solutions and improvements without departing from the spirit and scope of the application are covered in the scope of claims of the present application.

Claims

1. A semiconductor laser element provided with a triplet exciton accumulation layer, comprising, in order from the bottom, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), an upper confinement layer (106), characterized in that: A three-line state exciton enrichment layer (107) is arranged between the active layer (103) and the lower wave layer (102) and between the lower limiting layer (101) and the lower waveguide layer (102), the active layer (103) is a periodic structure composed of well layers and barrier layers, the number of periods is 3 >= m >= 1, the well layer is any one or any combination of InGaN, InN, AlInN and GaN, the thickness is 10-80 angstrom meters, the barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN and AlInN, the thickness is 10-120 angstrom meters; The three-line state exciton enrichment layer (107) is any one or any combination of hexagonal nanosheets or hollow nanostructures of PtSe2, MoSi2N4, Bi2O2Se, BP-InSe, Sb2S3 and In2S3-CdS.

2. A semiconductor laser device provided with a triplet exciton accumulation layer as set forth in claim 1, characterized in that, Any combination of the three-line state exciton enrichment layer (107) includes the following binary combinations of hexagonal nanosheets or hollow nanostructures: PtSe2 / MoSi2N4, PtSe2 / Bi2O2Se, PtSe2 / BP-InSe, PtSe2 / Sb2S3, PtSe2 / In2S3-CdS, MoSi2N4 / Bi2O2Se, MoSi2N4 / BP-InSe, MoSi2N4 / Sb2S3, MoSi2N4 / In2S3-CdS, Bi2O2Se / BP-InSe, Bi2O2Se / Sb2S3, Bi2O2Se / In2S3-CdS, BP-InSe / Sb2S3, BP-InSe / In2S3-CdS, Sb2S3 / In2S3-CdS.

3. A semiconductor laser device provided with a triplet exciton accumulation layer as set forth in claim 1, characterized in that, Any combination of the triplet exciton enrichment layers (107) includes hexagonal nanoplatelets or hollow nanostructures of the following ternary combinations: PtSe2 / MoSi2N4 / Bi2O2Se, PtSe2 / MoSi2N4 / BP-InSe, PtSe2 / MoSi2N4 / Sb2S3, PtSe2 / MoSi2N4 / In2S3-CdS, PtSe2 / Bi2O2Se / BP-InSe, PtSe2 / Bi2O2Se / Sb2S3, PtSe2 / Bi2O2Se / In2S3-CdS, PtSe2 / BP-InSe / Sb2S3, PtSe2 / BP-InSe / In2S3-CdS, PtSe2 / Sb2S3 / In2S3-CdS, MoSi2N4 / Bi2O2Se / BP-InSe, MoSi2N4 / Bi2O2Se / Sb2S3, MoSi2N4 / Bi2O2Se / In2S3-CdS, MoSi2N4 / BP-InSe / Sb2S3, MoSi2N4 / BP-InSe / In2S3-CdS, MoSi2N4 / Sb2S3 / In2S3-CdS, Bi2O2Se / BP-InSe / Sb2S3, Bi2O2Se / BP-InSe / In2S3-CdS, Bi2O2Se / Sb2S3 / In2S3-CdS, BP-InSe / Sb2S3 / In2S3-CdS.

4. A semiconductor laser device provided with a triplet exciton accumulation layer as set forth in claim 1, characterized in that, Any combination of the triplet exciton enrichment layers (107) includes hexagonal nanoplatelets or hollow nanostructures of the following quaternary combinations: PtSe2 / MoSi2N4 / Bi2O2Se / BP-InSe, PtSe2 / MoSi2N4 / Bi2O2Se / Sb2S3, PtSe2 / MoSi2N4 / Bi2O2Se / In2S3-CdS, PtSe2 / Bi2O2Se / BP-InSe / Sb2S3, PtSe2 / Bi2O2Se / BP-InSe / In2S3-CdS, PtSe2 / BP-InSe / Sb2S3 / In2S3-CdS, MoSi2N4 / Bi2O2Se / BP-InSe / Sb2S3, MoSi2N4 / Bi2O2Se / BP-InSe / In2S3-CdS, MoSi2N4 / BP-InSe / Sb2S3 / In2S3-CdS, Bi2O2Se / BP-InSe / Sb2S3 / In2S3-CdS.

5. A semiconductor laser device provided with a triplet exciton accumulation layer as set forth in claim 1, characterized in that, Any combination of the triplet exciton enrichment layer (107) includes the following five, six combinations of hexagonal nanosheets or hollow nanostructures: PtSe2 / MoSi2N4 / Bi2O2Se / BP-InSe / Sb2S3, PtSe2 / MoSi2N4 / Bi2O2Se / BP-InSe / In2S3-CdS, PtSe2 / MoSi2N4 / Bi2O2Se / Sb2S3 / In2S3-CdS, PtSe2 / MoSi2N4 / BP-InSe / Sb2S3 / In2S3-CdS, PtSe2 / Bi2O2Se / BP-InSe / Sb2S3 / In2S3-CdS, MoSi2N4 / Bi2O2Se / BP-InSe / Sb2S3 / In2S3-CdS, PtSe2 / MoSi2N4 / Bi2O2Se / BP-InSe / Sb2S3 / In2S3-CdS.

6. A semiconductor laser device provided with a triplet exciton accumulation layer as set forth in claim 1, characterized in that, The triplet exciton enrichment layer (107) enriches triplet excitons in the active layer by energy transfer in the laser element, and converts them into radiative singlet excitons by spin coupling inversion, so that the electron-hole wave function in the active layer achieves a radiative recombination efficiency of nearly 100%, enhances the confinement factor, realizes continuous oscillation, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

7. A semiconductor laser device provided with a triplet exciton accumulation layer as set forth in claim 1, characterized in that, The thickness of the triplet exciton enrichment layer (107) is 5-500 nm.

8. A semiconductor laser device provided with a triplet exciton accumulation layer as set forth in claim 1, characterized by The lower confining layer (101) is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm -3 ; the lower waveguide layer (102) and the upper waveguide layer (104) are any one or any combination of GaN, InGaN, AlInGaN, with a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm -3 ; the electron blocking layer (105) and the upper confining layer (106) are any one or any combination of GaN, AlGaN, AlInGaN, AlN, AlInN, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm -3 .

9. A semiconductor laser device provided with a triplet exciton accumulation layer as set forth in claim 1, characterized in that, The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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