Display device

Abstract

A display device with a novel structure is provided.SOLUTION: The display device includes a power supply line, a first transistor, a second transistor, a light-emitting device, and a light-receiving device. The light-emitting device includes a first electrode, a light-emitting layer, a first electron-transport layer, an electron-injection layer, and a second electrode which are stacked in this order. In the light-receiving device, a third electrode, an active layer, a first hole-transport layer, an electron-injection layer, and a second electrode are stacked in this order. The first electrode is electrically connected to one of a source and a drain of the first transistor. The second electrode is electrically connected to one of a source and a drain of the second transistor. The power supply line is electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] 1. Field of the Invention One embodiment of the present invention relates to a semiconductor device, a display device, a display module, and an electronic device. 2. Description of the Related Art One embodiment of the present invention relates to a manufacturing method of a display device.

[0002] One embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device (for example, a touch sensor), an input / output device (for example, a touch panel), a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] In recent years, information terminal devices such as mobile phones such as smartphones, tablet information terminals, and notebook PCs (personal computers) have become widespread. Such information terminal devices often contain personal information, and various authentication technologies have been developed to prevent unauthorized use. There is a demand for information terminal devices with various functions, such as an image display function, a touch sensor function, and a function for capturing fingerprint images for authentication.

[0004] For example, Patent Document 1 discloses an electronic device that includes a fingerprint sensor that is provided over a display unit.

[0005] As a display device, for example, a light-emitting device having a light-emitting device has been developed. A light-emitting device (also called an EL device or an EL element) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon has features such as being easily thin and lightweight, being capable of high-speed response to input signals, and being capable of being driven by a DC constant voltage power supply, and is therefore applied to display devices. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] US Patent Application Publication No. 2021 / 0089741 Summary of the Invention [Problem to be solved by the invention]

[0007] An object of one embodiment of the present invention is to provide a display device or the like having a display portion with a novel structure.An object of one embodiment of the present invention is to provide a display device or the like having a high-resolution display portion.An object of one embodiment of the present invention is to provide a display device or the like having a high-resolution display portion.An object of one embodiment of the present invention is to provide a display device or the like having a light detection function and a high-resolution display portion.An object of one embodiment of the present invention is to provide a display device or the like having a light detection function and a high-resolution display portion.

[0008] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims. [Means for solving the problem]

[0009] One embodiment of the present invention is a display device including a power supply line, a first transistor, a second transistor, a light-emitting device, and a light-receiving device. The light-emitting device has a first electrode, a light-emitting layer, a first electron-transport layer, an electron-injection layer, and a second electrode stacked in this order. The light-receiving device has a third electrode, an active layer, a first hole-transport layer, an electron-injection layer, and a second electrode stacked in this order. The first electrode is electrically connected to one of a source or a drain of the first transistor, the second electrode is electrically connected to one of a source or a drain of the second transistor, and the power supply line is electrically connected to the other of the source or the drain of the first transistor and the other of the source or the drain of the second transistor.

[0010] One embodiment of the present invention is a display device including a power supply line, a first transistor, a second transistor, a light-emitting device, and a light-receiving device. The light-emitting device has a first electrode, a light-emitting layer, a first electron-transport layer, an electron-injection layer, and a second electrode stacked in this order. The light-receiving device has a third electrode, an active layer, a first hole-transport layer, an electron-injection layer, and a second electrode stacked in this order. The first electrode is electrically connected to one of a source or a drain of the first transistor, the second electrode is electrically connected to one of a source or a drain of the second transistor, and the power supply line is electrically connected to the other of the source or the drain of the first transistor and the other of the source or the drain of the second transistor. The potential of the power supply line is higher than the potential of the second electrode.

[0011] In one aspect of the present invention, the display device is preferably one in which the first electrode and the third electrode are provided on the same surface.

[0012] In one embodiment of the present invention, the light-emitting device is preferably a display device having a second hole transport layer between the first electrode and the light-emitting layer.

[0013] In one embodiment of the present invention, the light-receiving device is preferably a display device having a second electron transport layer between the third electrode and the active layer.

[0014] In one embodiment of the present invention, the light-emitting device is preferably a display device having a function of emitting visible light, and the light-receiving device is preferably a display device having a function of detecting visible light.

[0015] In one embodiment of the present invention, the light-emitting device is preferably a display device having a function of emitting infrared light, and the light-receiving device is preferably a display device having a function of detecting infrared light.

[0016] One aspect of the present invention is a display module including the display device described above and at least one of a connector and an integrated circuit.

[0017] One embodiment of the present invention is an electronic device including the above-described display module and at least one of a housing, a battery, a camera, a speaker, and a microphone. [Effects of the Invention]

[0018] One embodiment of the present invention can provide a display device or the like having a display portion with a novel structure. One embodiment of the present invention can provide a display device or the like having a high-resolution display portion. One embodiment of the present invention can provide a display device or the like having a high-resolution display portion. One embodiment of the present invention can provide a display device or the like having a light detection function and a high-resolution display portion. One embodiment of the present invention can provide a display device or the like having a light detection function and a high-resolution display portion.

[0019] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims. [Brief explanation of the drawings]

[0020] [Figure 1] 1A to 1C are diagrams showing configuration examples of a display device. [Figure 2] 2A to 2C are diagrams showing configuration examples of a display device. [Figure 3] 3A to 3D are diagrams showing configuration examples of a display device. [Figure 4] 4A and 4B are diagrams showing configuration examples of a display device. [Figure 5] 5A and 5B are diagrams showing configuration examples of a display device. [Figure 6] 6A and 6B are diagrams showing configuration examples of a display device. [Figure 7] 7A and 7B are diagrams showing configuration examples of a display device. [Figure 8] 8A and 8B are diagrams showing configuration examples of a display device. [Figure 9]9A and 9B are diagrams showing configuration examples of a display device. [Figure 10] 10A and 10B are diagrams showing configuration examples of a display device. [Figure 11] 11A and 11B are diagrams showing configuration examples of a display device. [Figure 12] FIG. 12 is a diagram illustrating an example of the configuration of a display device. [Figure 13] 13A and 13B are diagrams showing configuration examples of a display device. [Figure 14] 14A and 14B are diagrams showing configuration examples of a display device. [Figure 15] 15A and 15B are diagrams showing configuration examples of a display device. [Figure 16] 16A and 16B are diagrams showing configuration examples of a display device. [Figure 17] 17A and 17B are diagrams showing configuration examples of a display device. [Figure 18] 18A and 18B are diagrams showing configuration examples of a display device. [Figure 19] 19A and 19B are diagrams showing configuration examples of a display device. [Figure 20] 20A and 20B are diagrams showing configuration examples of a display device. [Figure 21] 21A and 21B are diagrams showing configuration examples of a display device. [Figure 22] 22A and 22B are diagrams showing configuration examples of a display device. [Figure 23] 23A and 23B are diagrams showing configuration examples of a display device. [Figure 24] 24A and 24B are diagrams showing configuration examples of a display device. [Figure 25] 25A and 25B are diagrams showing configuration examples of a display device. [Figure 26] 26A and 26B are diagrams showing configuration examples of a display device. [Figure 27] 27A and 27B are diagrams showing configuration examples of a display device. [Figure 28] 28A and 28B are diagrams showing configuration examples of a display device. [Figure 29] FIG. 29 is a diagram illustrating an example of the configuration of a display device. [Figure 30] FIG. 30 is a diagram showing an example of the configuration of a display device. [Figure 31] FIG. 31 is a diagram illustrating an example of the configuration of a display device. [Figure 32] FIG. 32 is a diagram illustrating an example of the configuration of a display device. [Figure 33] 33A and 33B are diagrams showing configuration examples of a display device. [Figure 34] FIG. 34 is a diagram illustrating an example of the configuration of a display device. [Figure 35] 35A and 35B are diagrams showing configuration examples of a display device. [Figure 36] 36A and 36B are diagrams showing configuration examples of a display device. [Figure 37] 37A to 37C are diagrams showing configuration examples of a display device. [Figure 38] 38A and 38B are a block diagram and a timing chart of a display device. [Figure 39] FIG. 39 is a timing chart of the display device. [Figure 40] 40A to 40D are diagrams showing configuration examples of a display device. [Figure 41] 41A to 41C are diagrams showing configuration examples of a display device. [Figure 42] FIG. 42 is a diagram showing an example of the configuration of a display device. [Figure 43] 43A and 43B are diagrams showing configuration examples of a display device. [Figure 44] 44A and 44B are diagrams showing configuration examples of a display device. [Figure 45] 45A and 45B are diagrams showing configuration examples of a display device. [Figure 46] 46A and 46B are diagrams showing configuration examples of a display device. [Figure 47] Figures 47A, 47B, and 47D are cross-sectional views showing an example of a display device, and Figures 47C and 47E are diagrams showing examples of images captured by the display device. [Figure 48] FIG. 48 is a cross-sectional view showing an example of a display device. [Figure 49] 49A to 49C are cross-sectional views showing an example of a display device. [Figure 50] 50A to 50C are cross-sectional views showing an example of a display device. [Figure 51] 51A to 51C are diagrams showing an example of a display device. [Figure 52] 52A to 52C are diagrams showing an example of an electronic device. [Figure 53] Fig. 53A is a top view showing an example of a display device, and Fig. 53B is a cross-sectional view showing an example of a display device. [Figure 54] 54A to 54I are top views showing an example of a pixel. [Figure 55] 55A to 55E are top views showing an example of a pixel. [Figure 56] 56A and 56B are top views showing an example of a pixel. [Figure 57] 57A and 57B are top views showing an example of a pixel. [Figure 58] 58A and 58B are top views showing an example of a pixel. [Figure 59] 59A and 59B are top views showing an example of a pixel. [Figure 60] 60A and 60B are top views showing an example of a pixel. [Figure 61] 61A and 61B are a top view and a cross-sectional view showing an example of a display device. [Figure 62] 62A to 62F are top views showing an example of a method for manufacturing a display device. [Figure 63] 63A to 63C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 64] 64A to 64C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 65] 65A to 65C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 66] 66A and 66B are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 67] 67A to 67C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 68] 68A to 68C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 69] 69A and 69B are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 70] 70A to 70E are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 71] 71A to 71F are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 72] FIG. 72 is a perspective view showing an example of a display device. [Figure 73] Fig. 73A is a cross-sectional view showing an example of a display device, and Fig. 73B and Fig. 73C are cross-sectional views showing an example of a transistor. [Figure 74] FIG. 74 is a cross-sectional view showing an example of a display device. [Figure 75] 75A and 75B are perspective views showing an example of a display module. [Figure 76] FIG. 76 is a cross-sectional view showing an example of a display device. [Figure 77] FIG. 77 is a cross-sectional view showing an example of a display device. [Figure 78] FIG. 78 is a cross-sectional view showing an example of a display device. [Figure 79] FIG. 79 is a cross-sectional view showing an example of a display device. [Figure 80] FIG. 80 is a cross-sectional view showing an example of a display device. [Figure 81] 81A to 81D are diagrams showing an example of a transistor. [Figure 82] 82A and 82B are diagrams showing an example of an electronic device. [Figure 83] 83A to 83D are diagrams showing an example of an electronic device. [Figure 84] 84A to 84F are diagrams showing an example of an electronic device. [Figure 85] FIG. 85 is a diagram showing an example of a vehicle. DETAILED DESCRIPTION OF THE INVENTION

[0021] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0022] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned.

[0023] For ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0024] It should be noted that the terms "film" and "layer" can be interchangeable depending on the circumstances. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0025] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described, particularly a circuit configuration of a pixel of the display device.

[0026] A display device according to one embodiment of the present invention includes a display portion having a plurality of pixels arranged in a matrix, each of which includes a light-emitting device (also referred to as a light-emitting element) and a light-receiving device (also referred to as a light-receiving element).

[0027] The light-emitting device functions as a display device (also referred to as a display element). In a display device of one embodiment of the present invention, light-emitting devices are arranged in a matrix in a display portion, and an image can be displayed on the display portion. In addition, the display device of one embodiment of the present invention has a function of detecting light using a light-receiving device.

[0028] The light-emitting device preferably uses an EL device such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of light-emitting materials used in EL devices include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). LEDs such as micro LEDs (light-emitting diodes) can also be used as light-emitting devices. A TADF material may be a material in which the singlet excited state and the triplet excited state are in thermal equilibrium. Such TADF materials have a short emission lifetime (excitation lifetime), which can suppress a decrease in efficiency in the high-brightness region of light-emitting devices.

[0029] In a display portion of a display device according to one embodiment of the present invention, light-receiving devices are arranged in a matrix. The display portion has an image display function and / or an imaging function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, an image can be captured or the proximity or contact of an object (such as a finger, a hand, or a pen) can be detected. Furthermore, the display device according to one embodiment of the present invention can use a light-emitting device as a light source for a sensor. Therefore, a light-receiving portion and a light source are not required to be provided separately from the display device, and the number of components in an electronic device can be reduced.

[0030] When the light receiving device is used as an image sensor, the display device can capture an image using the light receiving device. For example, the display device of the present embodiment can be used as a scanner.

[0031] For example, an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. That is, a biometric authentication sensor can be built into the display device. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced compared to when a biometric authentication sensor is provided separately from the display device, and the electronic device can be made smaller and lighter.

[0032] When the light-receiving device is used as a touch sensor, the display device can detect the proximity or contact of an object using the light-receiving device.

[0033] A more specific example will be described below with reference to the drawings.

[0034] <Block diagram of display device> 1A shows a block diagram of the display device 10. The display device 10 includes a display unit 71, a drive circuit unit 72, a drive circuit unit 73, a drive circuit unit 74, a circuit unit 75, and the like.

[0035] The display unit 71 has a plurality of pixels 80 arranged in a matrix. Each pixel 80 has sub-pixels 81R, 81G, 81B, and 82PS. The sub-pixels 81R, 81G, and 81B each have a light-emitting device that functions as a display device. The sub-pixel 82PS has a light-receiving device that functions as a photoelectric conversion element.

[0036] In this specification, the smallest unit within a single "pixel" that performs independent operation is defined as a "sub-pixel" for convenience in the explanation, but "pixel" may be replaced with "region" and "sub-pixel" may be replaced with "pixel".

[0037] The pixel 80 is electrically connected to the wiring GL, the wiring SLR, the wiring SLG, the wiring SLB, the wiring SE, the wiring RS, the wiring WX, etc. The wirings SLR, the wiring SLG, and the wiring SLB are electrically connected to the driving circuit unit 72. The wiring GL is electrically connected to the driving circuit unit 73. The driving circuit unit 72 functions as a source line driving circuit (also referred to as a source driver). The driving circuit unit 73 functions as a gate line driving circuit (also referred to as a gate driver).

[0038] The pixel 80 has subpixels 81R, 81G, and 81B as subpixels having light-emitting devices. For example, the subpixel 81R is a subpixel that exhibits red, the subpixel 81G is a subpixel that exhibits green, and the subpixel 81B is a subpixel that exhibits blue. This allows the display device 100 to perform full-color display. Note that, although an example in which the pixel 80 has subpixels of three colors is shown here, the pixel 80 may have subpixels of four or more colors.

[0039] Subpixel 81R has a light-emitting device that emits red light. Subpixel 81G has a light-emitting device that emits green light. Subpixel 81B has a light-emitting device that emits blue light. Note that pixel 80 may have subpixels that have light-emitting devices that emit light of other colors. For example, pixel 80 may have, in addition to the above three subpixels, a subpixel that has a light-emitting device that emits white light or a subpixel that has a light-emitting device that emits yellow light.

[0040] The wiring GL is electrically connected to the sub-pixels 81R, 81G, and 81B arranged in the row direction (extension direction of the wiring GL). The wiring SLR, wiring SLG, and wiring SLB are electrically connected to the sub-pixels 81R, 81G, and 81B arranged in the column direction (extension direction of the wiring SLR, etc.), respectively.

[0041] The subpixel 82PS of the pixel 80 is electrically connected to a wiring SE, a wiring RS, and a wiring WX. The wiring SE and the wiring RS are each electrically connected to the drive circuit unit 74, and the wiring WX is electrically connected to the circuit unit 75.

[0042] The drive circuit unit 74 has a function of generating signals for driving the sub-pixels 82PS and outputting them to the sub-pixels 82PS via the wirings SE and RS. The circuit unit 75 has a function of receiving signals output from the sub-pixels 82PS via the wirings WX and outputting them to the outside as image data. The circuit unit 75 functions as a readout circuit.

[0043] <Pixel circuit configuration example> FIG. 1B shows an example of a circuit diagram of a pixel 81 that can be applied to the subpixels 81R, 81G, and 81B. The pixel 81 includes a transistor M11, a transistor M12, a capacitor C11, and a light-emitting device 11. A line GL and a line SL are electrically connected to the pixel 81. The line SL corresponds to any one of the line SLR, line SLG, and line SLB shown in FIG. 1A.

[0044] The transistor M11 has a gate electrically connected to the wiring GL, one of its source and drain electrically connected to the wiring SL, and the other electrically connected to one electrode of the capacitor C11 and the gate of the transistor M12. The transistor M12 has one of its source and drain electrically connected to the wiring EAL, and the other of its source and drain electrically connected to one electrode of the light-emitting device 11 and the other electrode of the capacitor C11. The light-emitting device 11 has the other electrode electrically connected to the wiring ACL.

[0045] The transistor M11 functions as a switch. The transistor M12 functions as a transistor for controlling the current flowing through the light emitting device 11.

[0046] Here, it is preferable that the transistors M11 and M12 are transistors having silicon in their channel formation regions (hereinafter referred to as Si transistors). Alternatively, it is preferable that the transistor M11 is a transistor having a metal oxide (also referred to as an oxide semiconductor) in its channel formation region (hereinafter referred to as an OS transistor), and the transistor M12 is a Si transistor.

[0047] Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. Si transistors have high field-effect mobility and good frequency characteristics. For example, a transistor having low-temperature polysilicon (LTPS) in the channel formation region (hereinafter referred to as an LTPS transistor) can be used.

[0048] By using Si transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, simplifying the external circuits mounted on the display device and reducing component and mounting costs.

[0049] The oxide semiconductor preferably contains, for example, indium, a metal M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin. In particular, an oxide containing indium, gallium, and zinc (also referred to as IGZO) is preferably used for the semiconductor layer of the OS transistor. Alternatively, an oxide containing indium, tin, and zinc is preferably used. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferably used.

[0050] An OS transistor using an oxide semiconductor, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current. Therefore, the small off-state current allows charge stored in a capacitor connected in series with the OS transistor to be held for a long period of time. Therefore, it is particularly preferable to use an OS transistor as the transistor M11 connected in series with the capacitor C11. Using an OS transistor as the transistor M11 can prevent charge stored in the capacitor C11 from leaking through the transistor M11. Furthermore, because charge stored in the capacitor C11 can be held for a long period of time, a still image can be displayed for a long period of time without rewriting data in the pixel 81.

[0051] The off-state current of the OS transistor per 1 μm of channel width at room temperature is 1 aA (1 × 10 -18 A) Below, 1zA(1×10 -21 A) or less, or 1yA (1 x 10 -24 A) or less. Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1×10 -15 A) More than 1pA (1×10 -12Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0052] A data potential is applied to the wiring SL, and a selection signal is applied to the wiring GL. The selection signal includes a potential that turns on a transistor and a potential that turns off a transistor.

[0053] A first potential is applied to the wiring EAL. A second potential is applied to the wiring ACL. The wiring EAL is electrically connected to the anode of the light-emitting device 11 and functions to supply the first potential to the anode of the light-emitting device 11. The wiring ACL is electrically connected to the cathode of the light-emitting device 11 and functions to supply the second potential to the cathode of the light-emitting device 11. The second potential is lower than the first potential. In the pixel 81, the first potential can be called the anode potential, and the second potential can be called the cathode potential. The wiring EAL is sometimes called a power supply line.

[0054] An example of a circuit diagram that can be applied to the sub-pixel 82PS is shown in Figure 1C. The pixel 82 includes a transistor M16, a transistor M17, a transistor M18, a capacitor C21, and a light-receiving device 12.

[0055] The cathode of the light-receiving device 12 is electrically connected to one of the source and drain of the transistor M16, a first electrode of the capacitor C21, and the gate of the transistor M17. The gate of the transistor M16 is electrically connected to a wiring RS, and the other of the source and drain is electrically connected to a wiring V11. The transistor M17 has one of the source and drain electrically connected to a wiring V13, and the other of the source and drain electrically connected to one of the source and drain of the transistor M18. The gate of the transistor M18 is electrically connected to a wiring SE, and the other of the source and drain is electrically connected to a wiring WX. The anode of the light-receiving device 12 is electrically connected to a wiring ACL. The second electrode of the capacitor C21 is electrically connected to a wiring V12.

[0056] The transistors M16 and M18 function as switches, and the transistor M17 functions as an amplifier.

[0057] It is preferable that all of the transistors M16 to M18 be Si transistors. Alternatively, it is preferable that the transistor M16 be an OS transistor and the transistor M17 be a Si transistor. In this case, the transistor M18 may be either an OS transistor or a Si transistor.

[0058] It is preferable to use a Si transistor for the transistor M17. Si transistors can achieve higher field-effect mobility than OS transistors and are excellent in drive capability and current capability. Therefore, the transistor M17 can operate at a higher speed than the transistor M16. Using a Si transistor for the transistor M17 allows the transistor M18 to quickly perform an output operation in response to a minute potential based on the amount of light received by the light-receiving device 12.

[0059] Although the transistors are shown as n-channel transistors in FIGS. 1B and 1C, p-channel transistors can also be used.

[0060] The transistors included in the pixel 81 and the pixel 82 are preferably formed side by side on the same substrate.

[0061] In the pixel 82, the wiring ACL electrically connected to the anode of the light receiving device 12 can be common to the wiring ACL of the pixel 81, and is supplied with a second potential. In the pixel 82, the wiring ACL has the function of applying the second potential to the anode of the light receiving device 12. In addition, in the pixel 82, the wiring V11 electrically connected to the cathode of the light receiving device 12 can be common to the wiring EAL of the pixel 81, and is supplied with a first potential. The first potential is higher than the second potential. This allows a reverse bias voltage to be applied to the light receiving device 12.

[0062] That is, the pixel 81 and the pixel 82 can share the wiring EAL as shown in FIG. 2A . Note that FIG. 2A illustrates an example in which the wiring V11, the wiring V13, the wiring V12, and the wiring EAL are shared. That is, in the circuit diagram shown in FIG. 2A , in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, the pixel 81 and the pixel 82 can share multiple wirings. This reduces the number of wirings electrically connected to the pixel 80 and the number of potentials applied to the pixel 80. As a result, the layout area of ​​the pixel 80 can be reduced, resulting in a display device having a high-resolution display unit while maintaining a light detection function. Furthermore, a display device having a high-resolution display unit while maintaining a light detection function can be provided.

[0063] <Configuration examples of light-emitting devices and light-receiving devices> A light-emitting device and a light-receiving device that can be applied to a display device according to one embodiment of the present invention will be described below. A cross-sectional schematic diagram of a light-emitting device 11 and a light-receiving device 12 included in a display device according to one embodiment of the present invention is shown in FIG.

[0064] The light-emitting device 11 has a function of emitting light (hereinafter also referred to as a light-emitting function). The light-emitting device 11 has an electrode 13A, an EL layer 17, and an electrode 15. The light-emitting device 11 is preferably an organic EL device (organic electroluminescence device). The EL layer 17 sandwiched between the electrode 13A and the electrode 15 has at least a light-emitting layer. The light-emitting layer has a light-emitting material that emits light. Light is emitted from the EL layer 17 by applying a voltage between the electrode 13A and the electrode 15. The EL layer 17 may further have various layers such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a carrier blocking layer, an exciton blocking layer, and a charge generation layer.

[0065] The light-receiving device 12 has a function of detecting light (hereinafter also referred to as a light-receiving function). For example, a pn-type or pin-type photodiode can be used as the light-receiving device 12. The light-receiving device 12 has an electrode 13B, a light-receiving layer 19, and an electrode 15. The light-receiving layer 19 sandwiched between the electrode 13B and the electrode 15 has at least an active layer. The light-receiving device 12 functions as a photoelectric conversion device, and can generate charges by light incident on the light-receiving layer 19 and extract them as a current. At this time, a voltage may be applied between the electrode 13B and the electrode 15. The amount of generated charges is determined based on the amount of light incident on the light-receiving layer 19.

[0066] The light receiving device 12 has a function of detecting visible light. The light receiving device 12 is sensitive to visible light. It is more preferable that the light receiving device 12 has a function of detecting visible light and infrared light. It is preferable that the light receiving device 12 is sensitive to at least either visible light or infrared light.

[0067] In this specification, the blue (B) wavelength range is from 400 nm to less than 490 nm, and blue (B) light has at least one emission spectrum peak in this wavelength range. The green (G) wavelength range is from 490 nm to less than 580 nm, and green (G) light has at least one emission spectrum peak in this wavelength range. The red (R) wavelength range is from 580 nm to less than 700 nm, and red (R) light has at least one emission spectrum peak in this wavelength range. Also, in this specification, the visible light wavelength range is from 400 nm to less than 700 nm, and visible light has at least one emission spectrum peak in this wavelength range. The infrared (IR) wavelength range is from 700 nm to less than 900 nm, and infrared (IR) light has at least one emission spectrum peak in this wavelength range.

[0068] The active layer contains a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In particular, it is preferable to use an organic photodiode having a layer containing an organic semiconductor as the light-receiving device 12. Organic photodiodes are easily made thin, lightweight, and large-area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices. Furthermore, using an organic semiconductor is preferable because the EL layer of the light-emitting device 11 and the light-receiving layer of the light-receiving device 12 can be formed by the same method (e.g., vacuum deposition), allowing the use of common manufacturing equipment.

[0069] A display device according to one embodiment of the present invention can suitably use an organic EL device as the light-emitting device 11 and an organic photodiode as the light-receiving device 12. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be built into a display device using an organic EL device. The display device according to one embodiment of the present invention has one or both of an imaging function and a sensing function in addition to a function of displaying an image.

[0070] Electrode 13A and electrode 13B are provided on the same surface. Fig. 2B shows a configuration in which electrode 13A and electrode 13B are provided on substrate 23. Electrode 13A and electrode 13B can be formed, for example, by processing a conductive film formed on substrate 23 into an island shape. In other words, electrode 13A and electrode 13B can be formed through the same process.

[0071] The substrate 23 may be a heat-resistant substrate that can withstand the formation of the light-emitting device 11 and the light-receiving device 12. When an insulating substrate is used as the substrate 23, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like may be used. In addition, a semiconductor substrate such as a single-crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate may be used.

[0072] In particular, it is preferable to use a substrate having a semiconductor circuit including semiconductor elements such as transistors formed on the aforementioned insulating substrate or semiconductor substrate as the substrate 23. The semiconductor circuit preferably comprises, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0073] The electrode 13A and the electrode 13B can each be referred to as a pixel electrode. The electrode 15 is a layer common to the light-emitting device 11 and the light-receiving device 12, and can be referred to as a common electrode. Of the pixel electrode and the common electrode, the electrode that emits light or that receives light uses a conductive film that transmits visible light and infrared light. It is preferable to use a conductive film that reflects visible light and infrared light for the electrode that does not emit light or that does not receive light.

[0074] In the display device according to one embodiment of the present invention, the electrode 15 functioning as a common electrode functions as either an anode or a cathode in the light-emitting device 11 and functions as the other anode or a cathode in the light-receiving device 12 .

[0075] Next, FIG. 2C is a schematic diagram of FIG. 2B with additional circuit symbols and other elements added to clearly illustrate the configuration in which, in the light-emitting device 11, electrode 13A functions as an anode and electrode 15 functions as a cathode, and in the light-receiving device 12, electrode 13B functions as a cathode and electrode 15 functions as an anode. To clearly illustrate the orientation of the anode and cathode, FIG. 2C shows the circuit symbol for a light-emitting diode on the left side of the light-emitting device 11 and the circuit symbol for a photodiode on the right side of the light-receiving device 12. The flow directions of electrons and holes are also indicated by arrows. Furthermore, FIG. 2C illustrates the electrode 15 in FIG. 2B as a wiring ACL. Furthermore, FIG. 2C illustrates the wiring EAL provided on the substrate 23, and the transistors M12 and M16 connected to the wiring EAL, connected to electrodes 13A and 13B, respectively.

[0076] In the light-emitting device 11, the electrode 13A functions as an anode and is connected to a wiring EAL that supplies a first potential via a transistor M12. In the light-emitting device 11, the wiring ACL functions as a cathode that supplies a second potential. The second potential is lower than the first potential.

[0077] In the light-receiving device 12, the electrode 13B functions as a cathode and is connected to a wiring EAL that supplies a first potential via the transistor M16. In the light-receiving device 12, the wiring ACL functions as an anode that supplies a second potential. Here, in the light-receiving device 12, the second potential is lower than the first potential, so a reverse bias voltage is applied.

[0078] In the light-emitting device 11, the electrode 13A functions as an anode and the electrode 15 functions as a cathode, and in the light-receiving device 12, the electrode 13B functions as a cathode and the electrode 15 functions as an anode, thereby making it possible to reduce the potential difference between the electrodes 13A and 13B and suppress leakage between the electrodes 13A and 13B (hereinafter also referred to as side leakage), thereby enabling a light-receiving device with a high signal-to-noise ratio (SNR).

[0079] In the display device of one embodiment of the present invention, side leakage between the light-emitting device 11 and the light-receiving device 12 is suppressed, and therefore the distance between the light-emitting device 11 and the light-receiving device 12 can be narrowed. That is, the ratio of the light-emitting device 11 and the light-receiving device 12 to the pixel (hereinafter also referred to as the aperture ratio) can be increased. Furthermore, the pixel size can be reduced, and the resolution of the display device can be increased. Therefore, a display device having a light detection function and a high aperture ratio can be realized. Furthermore, a display device having a light detection function and high resolution can be realized.

[0080] The resolution of the light-receiving device 12 is 100 ppi or more, preferably 200 ppi or more, more preferably 300 ppi or more, more preferably 400 ppi or more, and even more preferably 500 ppi or more, and can be 2000 ppi or less, 1000 ppi or less, or 600 ppi or less. In particular, the light-receiving device 12 can be suitably used for fingerprint imaging by being arranged with a resolution of 200 ppi to 600 ppi, preferably 300 ppi to 600 ppi, for example. A resolution of 500 ppi or more is also suitable because it complies with standards such as those of the National Institute of Standards and Technology (NIST). Assuming the resolution of the light-receiving device is 500 ppi, the size per pixel is 50.8 μm, which is sufficient resolution for imaging the width of a fingerprint (typically 300 μm to 500 μm).

[0081] Alternatively, the display device 10 according to one embodiment of the present invention may have a configuration in which, in the light-emitting device 11, the electrode 13A functions as a cathode and the electrode 15 functions as an anode, and, in the light-receiving device 12, the electrode 13B functions as an anode and the electrode 15 functions as a cathode.

[0082] <Modification of pixel circuit> In the following, an example of a configuration of the pixel 81 and the pixel 82 that is different from the above will be described.

[0083] Transistors having a pair of gates overlapping with a semiconductor layer interposed therebetween can be used as the transistors included in the pixel 81 and the pixel 82. Specific examples of an LTPS transistor and an OS transistor having a pair of gates will be described in detail below.

[0084] In a transistor having a pair of gates, when the pair of gates are electrically connected to each other and supplied with the same potential, the on-state current of the transistor is increased and the saturation characteristics are improved. A potential for controlling the threshold voltage of the transistor may be supplied to one of the pair of gates. Supplying a constant potential to one of the pair of gates can improve the stability of the electrical characteristics of the transistor. For example, one gate of the transistor may be electrically connected to a wiring to which a constant potential is supplied, or to its own source or drain.

[0085] 3A is an example in which a transistor having a pair of gates is used as the transistor M12 of the pixel 81. The other of the pair of gates of the transistor M12 is electrically connected to its own source or drain. By using such a transistor as the transistor M12, the saturation characteristics are improved, making it easier to control the light emission brightness of the light-emitting device 11 and improving display quality.

[0086] 3B is an example in which a transistor having a pair of gates is used as the transistor M17 of the pixel 82. The other of the pair of gates of the transistor M17 is electrically connected to its own source or drain. By using such a transistor as the transistor M17, the saturation characteristics are improved, thereby improving the readout accuracy of the signal generated by the light receiving device 12.

[0087] 3C is an example in which a transistor having a pair of gates is used as the transistor M11 of the pixel 81_1. The other of the pair of gates of the transistor M12 is electrically connected to its own source or drain. By using such a transistor as the transistor M11, good switching operation can be performed, thereby reducing the time required for display operation.

[0088] 3D is an example in which transistors having a pair of gates are used as the transistors M16 and M18 of the pixel 82_1. The other of the pair of gates of the transistor M17 is electrically connected to its own source or drain. By using such transistors as the transistors M16 and M18, good switching operation can be performed, thereby reducing the time required for the reset operation.

[0089] 4A is an example of a pixel 81 in which a transistor M13 is added to the pixel 81 and wirings GL1 and GL2 are provided for separately controlling the transistors M11 and M13. The gate of the transistor M11 is electrically connected to the wiring GL1. The gate of the transistor M13 is electrically connected to the wiring GL2. The transistor M13 functions as a switch, similar to the transistor M11. One of the source and drain of the transistor M13 is electrically connected to one electrode of the light-emitting device 11, and the other of the source and drain is electrically connected to the wiring RL.

[0090] A reset potential is applied to the wiring RL. The reset potential applied to the wiring RL can be set to a potential such that the potential difference between the reset potential and the cathode potential of the light-emitting device 11 is smaller than the threshold voltage of the light-emitting device 11. The reset potential can be set to a potential higher than the cathode potential, the same potential as the cathode potential, or a potential lower than the cathode potential.

[0091] A pixel 82_3 shown in FIG. 4B is an example in which the position of the transistor M18 in the pixel 82 is changed to between the transistor M17 and the wiring V13.

[0092] 5A shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_3 is applied to subpixel 82PS. FIG. 5A illustrates an example in which wiring V11, wiring V13, wiring V12, and wiring EAL are shared. That is, in the circuit diagram shown in FIG. 5A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0093] 5B shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_3 is applied to subpixel 82PS. FIG. 5B illustrates an example in which wiring V11, wiring V13, and wiring EAL are common, and wiring RL and wiring V12 are common. That is, in the circuit diagram shown in FIG. 5B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82 can be common. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of applied potentials can be reduced.

[0094] 6A shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82 is applied to subpixel 82PS. FIG. 6A illustrates an example in which wiring V11, wiring V12, and wiring EAL are shared, and wiring V13 is a separate wiring. That is, in the circuit diagram shown in FIG. 6A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0095] 6B shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82 is applied to subpixel 82PS. FIG. 6B illustrates an example in which wiring V11, wiring V12, and wiring EAL are common, and wiring RL and wiring V13 are common. That is, in the circuit diagram shown in FIG. 6B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82 can be common. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0096] 7A shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82 is applied to subpixel 82PS. FIG. 7A illustrates an example in which the wiring V13 and the wiring EAL are shared, and the wiring V11 and the wiring V12 are shared. That is, in the circuit diagram shown in FIG. 7A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0097] 7B shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82 is applied to subpixel 82PS. FIG. 7B illustrates an example in which the wiring V13 and wiring EAL are shared, and the wiring RL, wiring V11, and wiring V12 are shared. That is, in the circuit diagram shown in FIG. 7B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0098] 8A shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82 is applied to subpixel 82PS. FIG. 8A illustrates an example in which wiring V13 and wiring V12 are shared, and wiring V11 and wiring EAL are shared. That is, in the circuit diagram shown in FIG. 8A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0099] 8B shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82 is applied to subpixel 82PS. FIG. 8B illustrates an example in which the wiring V11 and wiring EAL are shared, and the wiring RL, wiring V12, and wiring V13 are shared. That is, in the circuit diagram shown in FIG. 8B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0100] 5A to 8B show an example in which pixel 82 (or pixel 82_3) is applied to sub-pixel 82PS, but it may be configured to apply pixels 82_1 to 82_3. Also, while FIG. 5A to 8B show an example in which pixel 81 or 81_3 is applied to sub-pixel 81R, sub-pixel 81G, or sub-pixel 81B, it may be configured to apply pixel 81_1 or 82_2.

[0101] 5A to 8B, the configuration in which the wiring connected to the transistors included in the pixel 80 is shared has been described, but other configurations may also be used.

[0102] FIG. 9A illustrates an example in which the gate of the transistor M21 electrically connected to the wiring WX is shared with the wiring RL in a circuit diagram of the pixel 80 when the pixel 81_3 is applied to the subpixel 81R, subpixel 81G, or subpixel 81B and the pixel 82 is applied to the subpixel 82PS. By applying the reset potential applied to the wiring RL to the gate of the transistor M21, the transistor M21 can function as a constant current source. FIG. 9B also illustrates an example in which the gate of the transistor M21 electrically connected to the wiring WX is shared with the wiring RL in a circuit diagram of the pixel 80 when the pixel 81_3 is applied to the subpixel 81R, subpixel 81G, or subpixel 81B and the pixel 82_3 is applied to the subpixel 82PS. By applying the reset potential applied to the wiring RL to the gate of the transistor M21, the transistor M21 can function as a constant current source. 9A and 9B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, the plurality of wirings of the pixels 81_3 and 82 (or the pixels 82_3) can be shared with other wirings (wirings that apply potentials). Therefore, in a pixel having the subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0103] Configurations that differ from the block diagram of display device 10 shown in Fig. 1A will be described in Fig. 10A. Note that the description in Fig. 10A will only focus on differences from Fig. 1A, and configurations with common reference numerals are the same as those in Fig. 1A.

[0104] In FIG. 10A, the pixel 80 is electrically connected to the wiring GL, the wiring SLR, the wiring SLG, the wiring SLB, the wiring TX, the wiring SE, the wiring RS, the wiring WX, and the like.

[0105] 10A, a subpixel 82PS included in a pixel 80 is electrically connected to a wiring TX, a wiring SE, a wiring RS, and a wiring WX. The wiring TX, the wiring SE, and the wiring RS are each electrically connected to a drive circuit unit 74, and the wiring WX is electrically connected to a circuit unit 75.

[0106] The drive circuit unit 74 has a function of generating signals for driving the sub-pixels 82PS and outputting them to the sub-pixels 82PS via the wirings SE, TX, and RS.

[0107] 10B shows an example of a circuit diagram that can be applied to the sub-pixel 82PS in FIG. 10A. The pixel 82_4 has a transistor M15, a transistor M16, a transistor M17, a transistor M18, a capacitor C21, and a light-receiving device 12. The light-receiving device 12 can be the above-described light-receiving device.

[0108] The gate of the transistor M15 is electrically connected to the wiring TX, one of the source and drain is electrically connected to the cathode of the light receiving device 12, and the other of the source and drain is electrically connected to one of the source and drain of the transistor M16, the first electrode of the capacitor C21, and the gate of the transistor M17.

[0109] The transistor M15 functions as a switch. Preferably, the transistor M15 is a Si transistor or an OS transistor. By using OS transistors as the transistors M15 and M16, it is possible to prevent a potential held at the gate of the transistor M17, which is generated based on charges generated in the light-receiving device 12, from leaking through the transistor M15 or the transistor M16.

[0110] For example, when imaging using the global shutter method, the period (charge retention period) from the end of the charge transfer operation to the start of the readout operation differs depending on the pixel. Here, capturing an image in which all pixels have the same grayscale value ideally results in output signals with the same potential value for all pixels. However, if the length of the charge retention period differs from row to row, and the charges accumulated in the nodes of the pixels in each row leak over time, the potential of the pixel output signals differs from row to row, resulting in image data with different grayscale levels for each row. Therefore, by using OS transistors as transistors M15 and M16, the potential change at the pixel nodes can be minimized. In other words, even when imaging using the global shutter method, the change in grayscale of image data due to different charge retention periods can be minimized, thereby improving the quality of the captured image.

[0111] On the other hand, it is preferable to use a Si transistor for the transistor M17. Si transistors can achieve higher field-effect mobility than OS transistors and are excellent in drive capability and current capability. Therefore, the transistor M17 can operate at a higher speed than the transistors M15 and M16. Using a Si transistor for the transistor M17 allows the transistor M18 to quickly perform an output operation in response to a minute potential based on the amount of light received by the light-receiving device 12.

[0112] That is, in pixel 82, transistors M15 and M16 have low leakage current, and transistor M17 has high driving capability, so that the charge received by the light receiving device 12 and transferred via transistor M15 can be held without leakage and can be read out at high speed.

[0113] Although the transistors are shown as n-channel transistors in FIG. 10B, p-channel transistors can also be used.

[0114] A pixel 82_5 shown in FIG. 11A is an example in which the position of the transistor M16 in the pixel 82_4 is changed to one connected to the source or drain of the transistor M15 and the cathode of the light receiving device 12.

[0115] A pixel 82_6 shown in FIG. 11B is an example in which the position of the transistor M18 in the pixel 82_5 is changed to between the transistor M17 and the wiring V13.

[0116] A pixel 82_7 shown in FIG. 12 is an example in which the position of the transistor M16 in the pixel 82_6 is changed to one connected to the source or drain of the transistor M15 and the cathode of the light receiving device 12.

[0117] 13A is an example of a configuration in which a pixel 82_4 includes a plurality of pairs of a transistor M15 and a light receiving device PD. The transistor M15_1 has a gate electrically connected to a wiring TX_1, one of a source and a drain electrically connected to a cathode of a light receiving device PD1, and the other of a source and a drain electrically connected to one of a source and a drain of a transistor M16, a first electrode of a capacitor C21, and a gate of a transistor M17. The transistor M15_2 has a gate electrically connected to a wiring TX_2, one of a source and a drain electrically connected to a cathode of a light receiving device PD2, and the other of a source and a drain electrically connected to one of a source and a drain of a transistor M16, a first electrode of a capacitor C21, and a gate of a transistor M17. The anode of the light receiving device PD1 and the anode of the light receiving device PD2 are electrically connected to a wiring ACL.

[0118] A pixel 82_9 shown in FIG. 13B is an example in which the position of the transistor M18 in the pixel 82_8 is changed to between the transistor M17 and the wiring V13.

[0119] 14A shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_4 is applied to subpixel 82PS. FIG. 14A illustrates an example in which wiring V11, wiring V13, wiring V12, and wiring EAL are shared. That is, in the circuit diagram shown in FIG. 14A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82_4 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0120] 14B shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_5 is applied to subpixel 82PS. FIG. 14B illustrates an example in which wiring V11, wiring V13, wiring V12, and wiring EAL are shared. That is, in the circuit diagram shown in FIG. 14B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82_5 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0121] 15A shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_4 is applied to subpixel 82PS. FIG. 15A illustrates an example in which wiring V11, wiring V13, and wiring EAL are shared, and wiring V12 is a separate wiring. That is, in the circuit diagram shown in FIG. 15A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82_4 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0122] In FIG. 15A, the capacitance C21 of the pixel 82_4 can be omitted as shown in FIG. 15B by increasing the parasitic capacitance of the gate of the transistor M17.

[0123] 16A shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_6 is applied to subpixel 82PS. FIG. 16A illustrates an example in which wiring V11, wiring V13, wiring V12, and wiring EAL are shared. That is, in the circuit diagram shown in FIG. 16A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82_6 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0124] 16B shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_7 is applied to subpixel 82PS. FIG. 16B illustrates an example in which wiring V11, wiring V13, wiring V12, and wiring EAL are shared. That is, in the circuit diagram shown in FIG. 16B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82_7 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0125] 17A shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_8 is applied to subpixel 82PS. FIG. 17A illustrates an example in which wiring V11, wiring V13, wiring V12, and wiring EAL are shared. That is, in the circuit diagram shown in FIG. 17A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82_8 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0126] 17B shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_9 is applied to subpixel 82PS. FIG. 17B illustrates an example in which wiring V11, wiring V13, wiring V12, and wiring EAL are shared. That is, in the circuit diagram shown in FIG. 17B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82_9 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0127] As shown in FIGS. 17A and 17B, when multiple light-receiving devices are provided in a pixel 82_8 or 82_9, the light-receiving devices may have different spectral sensitivity characteristics. For example, a configuration may be adopted in which a light-receiving device 12IR having spectral sensitivity characteristics in the infrared wavelength region and a light-receiving device 12 having spectral sensitivity characteristics in the visible wavelength region are arranged. FIG. 18A is an example of a circuit diagram of a pixel 80 having a light-receiving device 12IR having spectral sensitivity characteristics in the infrared wavelength region and a light-receiving device 12 having spectral sensitivity characteristics in the visible wavelength region in the circuit diagram configuration shown in FIG. 17A. FIG. 18B is an example of a circuit diagram of a pixel 80 having a light-receiving device 12IR having spectral sensitivity characteristics in the infrared wavelength region and a light-receiving device 12 having spectral sensitivity characteristics in the visible wavelength region in the circuit diagram configuration shown in FIG. 17B.

[0128] 19A shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_4 is applied to subpixel 82PS. FIG. 19A illustrates an example in which wiring V11, wiring V12, wiring V13, and wiring EAL are shared. That is, in the circuit diagram shown in FIG. 19A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82_4 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0129] 19B shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_5 is applied to subpixel 82PS. FIG. 19B illustrates an example in which wiring V11, wiring V12, wiring V13, and wiring EAL are shared. That is, in the circuit diagram shown in FIG. 19B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82_5 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of applied potentials can be reduced.

[0130] 20A shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_4 is applied to subpixel 82PS. FIG. 20A illustrates an example in which wiring V11, wiring V13, and wiring EAL are common, and wiring RL and wiring V12 are common. That is, in the circuit diagram shown in FIG. 20A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82_4 can be common. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of applied potentials can be reduced.

[0131] 20B shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_4 is applied to subpixel 82PS. FIG. 20B illustrates an example in which wiring V11, wiring V13, and wiring EAL are shared, and wiring V12 is omitted. That is, in the circuit diagram shown in FIG. 20B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixels 81_3 and 82_4 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of applied potentials can be reduced.

[0132] 21A shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_6 is applied to subpixel 82PS. FIG. 21A illustrates an example in which wiring V11, wiring V12, wiring V13, and wiring EAL are shared. That is, in the circuit diagram shown in FIG. 21A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82_6 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0133] 21B shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_7 is applied to subpixel 82PS. FIG. 21B illustrates an example in which wiring V11, wiring V12, wiring V13, and wiring EAL are shared. That is, in the circuit diagram shown in FIG. 21B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82_7 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0134] 22A shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_4 is applied to subpixel 82PS. FIG. 22A illustrates an example in which wiring V11, wiring V12, and wiring EAL are shared, and wiring V13 is a separate wiring. That is, in the circuit diagram shown in FIG. 22A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82_4 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0135] 22B shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_4 is applied to subpixel 82PS. FIG. 22B illustrates an example in which wiring V12, wiring V13, and wiring EAL are shared, and wiring V11 is a separate wiring. That is, in the circuit diagram shown in FIG. 22B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82_4 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0136] 23A shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_4 is applied to subpixel 82PS. FIG. 23A illustrates an example in which wiring V11, wiring V12, and wiring EAL are common, and wiring RL and wiring V13 are common. That is, in the circuit diagram shown in FIG. 23A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82_4 can be common. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0137] 23B shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_4 is applied to subpixel 82PS. FIG. 23B illustrates an example in which wiring V12, wiring V13, and wiring EAL are common, and wiring RL and wiring V11 are common. That is, in the circuit diagram shown in FIG. 23B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82_4 can be common. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0138] 24A shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_6 is applied to subpixel 82PS. FIG. 24A illustrates an example in which wiring V11, wiring V12, and wiring EAL are shared, and wiring V13 is a separate wiring. That is, in the circuit diagram shown in FIG. 24A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82_6 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0139] 24B shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_7 is applied to subpixel 82PS. FIG. 24B illustrates an example in which wiring V12, wiring V13, and wiring EAL are shared, and wiring V11 is a separate wiring. That is, in the circuit diagram shown in FIG. 24B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82_7 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0140] 25A shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_6 is applied to subpixel 82PS. FIG. 25A illustrates an example in which wiring V11, wiring V12, and wiring EAL are common, and wiring RL and wiring V13 are common. That is, in the circuit diagram shown in FIG. 25A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82_6 can be common. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0141] 25B shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_7 is applied to subpixel 82PS. FIG. 25B illustrates an example in which wiring V12, wiring V13, and wiring EAL are common, and wiring RL and wiring V11 are common. That is, in the circuit diagram shown in FIG. 25B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82_7 can be common. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0142] 26A shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_6 is applied to subpixel 82PS. FIG. 26A illustrates an example in which wiring V11 and wiring EAL are shared, and wiring V12 and wiring V13 are shared. That is, in the circuit diagram shown in FIG. 26A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82_6 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0143] 26B shows an example of a circuit diagram of pixel 80 when pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_7 is applied to subpixel 82PS. FIG. 26B illustrates an example in which wiring V11 and wiring EAL are shared, and wiring V12 and wiring V13 are shared. That is, in the circuit diagram shown in FIG. 26B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81 and pixel 82_7 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0144] 27A shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_6 is applied to subpixel 82PS. FIG. 27A illustrates an example in which the wiring V11 and wiring EAL are shared, and the wiring RL, wiring V12, and wiring V13 are shared. That is, in the circuit diagram shown in FIG. 27A, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82_6 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0145] 27B shows an example of a circuit diagram of pixel 80 when pixel 81_3 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_7 is applied to subpixel 82PS. FIG. 27B illustrates an example in which the wiring V11 and wiring EAL are shared, and the wiring RL, wiring V12, and wiring V13 are shared. That is, in the circuit diagram shown in FIG. 27B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of pixel 81_3 and pixel 82_7 can be shared. Therefore, in a pixel having subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0146] 19A to 27B, the configuration in which the wiring connected to the transistors included in the pixel 80 is shared has been described, but other configurations may also be used.

[0147] FIG. 28A illustrates an example in which the gate of the transistor M21 electrically connected to the wiring WX is shared with the wiring RL in a circuit diagram of the pixel 80 when the pixel 81_3 is applied to the subpixel 81R, the subpixel 81G, or the subpixel 81B and the pixel 82_4 is applied to the subpixel 82PS. The transistor M21 can function as a current source that supplies a current in response to a reset potential applied to the wiring RL. FIG. 28B also illustrates an example in which the gate of the transistor M21 electrically connected to the wiring WX is shared with the wiring RL in a circuit diagram of the pixel 80 when the pixel 81_3 is applied to the subpixel 81R, the subpixel 81G, or the subpixel 81B and the pixel 82_5 is applied to the subpixel 82PS. The transistor M21 can function as a current source that supplies a current in response to a reset potential applied to the wiring RL. 28A and 28B, in a configuration in which a forward bias voltage is applied to the light-emitting device 11 and a reverse bias voltage is applied to the light-receiving device 12, the plurality of wirings of the pixels 81_3 and 82_4 (or the pixel 82_5) can be shared with other wirings (wirings that apply potentials). Therefore, in a pixel having the subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced.

[0148] An example of a circuit diagram of a pixel 80 having subpixels 81R, 81G, 81B, and 82PS is shown in Fig. 29. Fig. 29 is a circuit diagram in which pixel 81 is applied to subpixel 81R, subpixel 81G, or subpixel 81B, and pixel 82_4 is applied to subpixel 82PS.

[0149] In the subpixel 82PS, the wirings V11 to V13 can be shared with the wiring EAL of the subpixel 81B. In the circuit diagram shown in FIG. 29, in a configuration in which a forward bias voltage is applied to the light-emitting devices 11R, 11G, and 11B and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of the subpixel 81B and the pixel 82PS can be shared. Note that the subpixel 81R or the subpixel 81G may be used instead of the subpixel 81B. As shown in FIG. 29, in a pixel having the subpixels 81R, 81G, 81B, and the subpixel 82PS, the number of wirings and the number of applied potentials can be reduced. As a result, a display device having a high-resolution display unit while maintaining a light detection function can be provided. Furthermore, a display device having a high-resolution display unit while maintaining a light detection function can be provided.

[0150] It should be noted that the configurations of the subpixels 81R, 81G, 81B, and 82PS are not limited to the configuration shown in Fig. 29. An example of a circuit diagram of the pixel 80 different from that shown in Fig. 29 is shown in Fig. 30. Fig. 30 is a circuit diagram in which the pixel 81_3 is applied to the subpixel 81R, 81G, or 81B, and the pixel 82_4 is applied to the subpixel 82PS.

[0151] In the subpixel 82PS, the wirings V11 to V13 can be shared with the wiring EAL of the subpixel 81B. In the circuit diagram shown in FIG. 29, in a configuration in which a forward bias voltage is applied to the light-emitting devices 11R, 11G, and 11B and a reverse bias voltage is applied to the light-receiving device 12, multiple wirings of the subpixels 81B and 82PS can be shared. Note that the subpixel 81R or 81G may be used instead of the subpixel 81B. As shown in FIG. 30, in a pixel including the subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of applied potentials can be reduced. As a result, a display device having a high-resolution display unit while maintaining a light detection function can be provided. Furthermore, a display device having a high-resolution display unit while maintaining a light detection function can be provided.

[0152] Note that the subpixels 81R, 81G, 81B, and 82PS shown in FIG. 30 may share another wiring as shown in FIG. 31. For example, the wiring GL1 and the wiring GL2 may be shared. As shown in FIG. 31, in a pixel having the subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of potentials to be applied can be reduced. As a result, a display device having a high-resolution display unit while maintaining a light detection function can be provided. Furthermore, a display device having a high-resolution display unit while maintaining a light detection function can be provided.

[0153] Note that the subpixels 81G, 81B, and 82PS shown in FIG. 29 may share a different wiring as shown in FIG. 32. For example, the wiring connected to the subpixel 82PS may be divided into the wiring EAL connected to the subpixel 81G and the wiring EAL connected to the subpixel 81B. As shown in FIG. 32, in a pixel having the subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of applied potentials can be reduced. As a result, a display device having a high-resolution display unit while maintaining a light detection function can be provided. Furthermore, a display device having a high-resolution display unit while maintaining a light detection function can be provided.

[0154] Furthermore, in the configuration having multiple light-receiving devices within the pixel 82PS as illustrated in FIGS. 17A and 17B, a light-receiving device can be provided between the wiring EAL connected to the subpixel 81G and the wiring EAL connected to the subpixel 81B, as illustrated in FIG. 33A. FIG. 33A illustrates a configuration in which the light-receiving device 12_1 connected to the transistor M15_1 and the light-receiving device 12_2 connected to the transistor M15_2 are provided between the wiring EAL connected to the subpixel 81G and the wiring EAL connected to the subpixel 81B. As illustrated in FIG. 33A, in a pixel having the subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of applied potentials can be reduced. As a result, a display device having a high-resolution display unit while maintaining a light-detection function can be provided. Furthermore, a display device having a high-resolution display unit while maintaining a light-detection function can be provided.

[0155] 33B, which is a configuration different from that shown in FIG. 33A, illustrates a state in which the light-receiving device 12_1 connected to the transistor M15_1 and the light-receiving device 12_2 connected to the transistor M15_2 are provided across the wiring EAL connected to the subpixel 81G and the wiring EAL connected to the subpixel 81R. As shown in FIG. 33B, in a pixel having the subpixels 81R, 81G, 81B, and 82PS, the number of wirings and the number of applied potentials can be reduced. As a result, a display device having a high-resolution display unit while maintaining a light detection function can be provided. Furthermore, a display device having a high-resolution display unit while maintaining a light detection function can be provided.

[0156] FIG. 34, which is a configuration different from FIGS. 33A and 33B, illustrates a configuration in which the light-receiving device 12_1 connected to the transistor M15_1 and the light-receiving device 12_2 connected to the transistor M15_2 are provided across different pixel regions. As shown in FIG. 34, in a pixel having subpixels 81R_N, 81G_N, 81B_N, and 82PS_N in the Nth row, the light-receiving device 12_2 connected to the transistor M15_2 of the subpixel 82PS_N is provided in a pixel having subpixels 81R_N+1, 81G_N+1, and 81B_N+1 in the N+1th row. As shown in FIG. 34, even in the case of subpixels 82PS provided across multiple rows, the number of wirings and the number of applied potentials can be reduced. As a result, a display device having a high-resolution display unit while maintaining a light detection function can be provided. Furthermore, a display device having a high-resolution display unit while maintaining a light detection function can be provided.

[0157] FIG. 35A also shows an example of a pixel layout diagram corresponding to the circuit diagram shown in FIG. 29. The symbols shown in FIG. 35A correspond to the configuration shown in FIG. 29. Note that, for ease of understanding, FIG. 35A shows a layout diagram up to the electrodes connected to the light-emitting device and the light-receiving device, and does not show components such as insulating layers and wiring ACLs. Also, for ease of understanding, FIG. 35A shows the transistors as having the same size in terms of shape and size, but the transistors may have different channel widths and lengths.

[0158] FIG. 35B is a cross-sectional view taken along dashed line X1-X2 in FIG. 35A. The layout diagram in FIG. 35A illustrates a transistor MT having the semiconductor layer SEML, conductive layer SDM, and conductive layer GE shown in FIG. 35B, as well as a conductive layer PE connected to the transistor MT. The cross-sectional view of the transistor MT is applicable to the transistors M11, M12, and transistors M15 to M18. As shown in FIGS. 35A and 35B, the wiring EAL connected to the subpixel 81B in which the light-emitting element 11B is provided can be applied as the wiring connected to the transistors M15 to M18, thereby reducing the number of wirings and the number of applied potentials. As a result, a display device having a high-resolution display unit while maintaining a light detection function can be provided. Furthermore, a display device having a high-resolution display unit while maintaining a light detection function can be provided.

[0159] <Driving method example> Next, an example of a method for driving the above-mentioned pixel will be described. As an example, an example of a method for driving pixel 81_3 shown in FIG. 36A will be described.

[0160] Fig. 36B is a timing chart for explaining the operation of Fig. 36A. The pixel 81_3 shown in Fig. 36A can correct the luminance variation caused by the variation in transistor characteristics among pixels by providing different signals to the wirings GL1 and GL2 as shown in Fig. 36B. The operation of the pixel 81_3 during periods P1 to P3 shown in Fig. 36B will be described with reference to Figs. 37A to 37C.

[0161] FIG. 37A illustrates the operation during a period P1 during which both signals applied to the lines GL1 and GL2 are set to the H level. In FIG. 37A, the H level of the signals applied to the lines GL1 and GL2 is set to 5V for ease of understanding. Similarly, the data potential applied to the line SL for pixel 81_3 is set to 3V, the potential applied to the line EAL is set to 5V, the potential applied to the line ACL is set to 0V, and the potential applied to the line RL is set to 0V. At this time, both the transistors M11 and M13 are in a conductive state. In FIG. 37A, the effect of the potentials of each line on the pixel 81_3 is indicated by dotted arrows. A voltage of 3V is applied across the capacitor C11. This voltage is the voltage between the gate and source of the transistor M12 (gate-source voltage: Vgs), and is indicated as Vgs=3V in FIG. 37A. Although FIG. 36B illustrates the signals applied to the lines GL1 and GL2 as simultaneously setting to the H level, they do not necessarily need to be simultaneously.

[0162] FIG. 37B illustrates the operation during period P2, when the signal applied to line GL1 is set to a high level and the signal applied to line GL2 is set to a low level. In FIG. 37B, the low level of the signal applied to line GL2 is set to 0 V for ease of understanding. At this time, transistor M11 is conductive, and transistor M13 is non-conductive. In FIG. 37B, non-conductive transistors are marked with a cross. In FIG. 37B, dotted arrows indicate the effect of the potentials on the lines to pixel 81_3. A current flows through transistor M12 according to Vgs. This increases the source potential of transistor M12, causing the voltage held across capacitor C11 to fluctuate by Δ from 3 V. The magnitude of this voltage fluctuation Δ varies from pixel to pixel depending on factors such as the field-effect mobility of transistor M12. In other words, the operation of FIG. 37B maintains Vgs according to the characteristics variation of transistor M12. If the length of the period P2 is too long, the voltage fluctuation Δ increases and the voltage across the capacitor C11 decreases, so it is preferable that the period P2 be shorter than the period P1.

[0163] FIG. 37C illustrates the operation during period P3 when both signals applied to lines GL1 and GL2 are at the L level. In FIG. 37C, the L level of the signals applied to lines GL1 and GL2 is set to 0V for ease of understanding. At this time, transistors M11 and M13 are in a non-conductive state. In FIG. 37C, non-conductive transistors are marked with a cross. In FIG. 37C, dotted arrows indicate the effect of the potentials on the lines to pixel 81_3. Transistor M13 can pass a current to the light-emitting device 11 that corresponds to a voltage (3V-Δ) obtained by varying the voltage held across capacitor C11 by Δ from 3V. The voltage (3V-Δ) that becomes Vgs allows a current to be passed through the light-emitting device 11 that compensates for variations in the characteristics of transistor M12.

[0164] 38A and 38B, an example of a driving method for driving the pixel 81_3 shown in FIG. 36A, which is provided in a different row, will be described.

[0165] FIG. 38A shows a block diagram in which pixel 81_3 is applied to subpixels 81R, 81G, and 81B in a display device 10. The display device 10 includes a display unit 71, a drive circuit unit 72, a drive circuit unit 73, and the like. The display unit 71 includes a plurality of pixels 80_N and 80_N+1 arranged in a matrix. FIG. 38A illustrates pixel 80_N and pixel 80_N+1 as pixels in different rows. FIG. 38A illustrates wirings GL1_N and GL2_N as wirings GL1 and GL2 in the row in which pixel 80_N is located. FIG. 38A also illustrates wirings GL1_N+1 and GL2_N+1 as wirings GL1 and GL2 in the row in which pixel 80_N+1 is located.

[0166] Fig. 38B is a timing chart for explaining signals applied to the wirings GL1_N, GL2_N, GL1_N+1, and GL2_N+1 shown in Fig. 38A. In Fig. 38B, period P_F is one frame period, and period P_E is the light emission period of the light emitting device 11. Periods P_GS1 and P_GS2 are periods during which signals for selecting pixels to be applied to each wiring are applied. Note that Fig. 38B illustrates how the signals for the wirings GL1_N and GL2_N, and the wirings GL1_N+1 and GL2_N+1 change at the same timing, but the signals may change at different timings as illustrated in Fig. 36B above.

[0167] During the pixel selection period of period P_GS1, a signal for causing the light-emitting device 11 to emit light and display an image is applied to the wiring SL. During the pixel selection period of period P_GS2, a signal for turning off the light-emitting device 11 and displaying black is applied to the wiring SL. This configuration enables a driving method (duty driving) in which the light is not lit throughout one frame period, but rather an off period is provided within one frame period. Using duty driving can reduce the afterimage phenomenon when displaying moving images, thereby realizing a display device with high moving image display performance. In particular, in VR equipment, reducing afterimages can reduce so-called VR sickness.

[0168] In duty driving, the ratio of the lighting period to one horizontal period is called the duty ratio. The duty ratio can be freely set and can be adjusted as appropriate within the range of, for example, more than 0% and less than 100%.

[0169] Next, an example of a method for driving the pixel 82_4 shown in Fig. 10B will be described with reference to a timing chart shown in Fig. 39. Fig. 39 shows signals input to the wiring TX, the wiring SE, the wiring RS, and the wiring WX.

[0170] Before time T21, a low-level potential is applied to the wiring TX, the wiring SE, and the wiring RS. The wiring WX is in a state where no data is output, and is shown here as a low-level potential. Note that a predetermined potential may be applied to the wiring WX.

[0171] At time T21, a potential (here, a high-level potential) that turns on the transistors is applied to the wiring TX and the wiring RS, and a potential (here, a low-level potential) that turns off the transistors is applied to the wiring SE.

[0172] At this time, the transistors M15 and M16 are turned on, so that a potential lower than the potential of the cathode is applied to the anode of the light-receiving device 12 from the wiring V11 via the transistors M16 and M15. In other words, a reverse bias voltage is applied to the light-receiving device 12.

[0173] The potential of the line V11 is also supplied to the first electrode of the capacitor C21, and the capacitor C21 enters a charged state.

[0174] The period T21-T22 can also be called a reset (initialization) period.

[0175] At time T22, a low-level potential is applied to the wiring TX and the wiring RS, which brings the transistor M15 and the transistor M16 into a non-conducting state.

[0176] Since the transistor M15 is in a non-conductive state, a reverse bias voltage is applied to the light-receiving device 12. Here, photoelectric conversion occurs due to light incident on the light-receiving device 12, and electric charges are accumulated in the light-receiving device 12.

[0177] The period T22-T23 can also be called an exposure period. The exposure period may be set depending on the sensitivity of the light receiving device 12, the amount of incident light, etc., but it is preferable to set the exposure period to a period at least sufficiently longer than the reset period.

[0178] During the period T22-T23, the transistor M15 and the transistor M16 are in a non-conductive state, and therefore the potential of the first electrode of the capacitor C21 is maintained at the potential supplied from the wiring V11.

[0179] At time T23, a high-level potential is applied to the line TX. This causes the transistor M15 to conduct, and the charge stored in the light-receiving device 12 is transferred to the first electrode of the capacitor C21 via the transistor M15. This causes the potential of the node to which the first electrode of the capacitor C21 is connected to rise in accordance with the amount of charge stored in the light-receiving device 12. As a result, a potential corresponding to the exposure amount of the light-receiving device 12 is applied to the gate of the transistor M17.

[0180] At time T24, a low-level potential is applied to the line TX. This turns off the transistor M15, and the node connected to the gate of the transistor M17 is set to a floating state. Because the light-receiving device 12 is constantly exposed to light, turning off the transistor M15 after the transfer operation in the period T23-T24 is completed prevents the potential of the node connected to the gate of the transistor M17 from changing.

[0181] At time T25, a high-level potential is applied to the wiring SE, which turns on the transistor M18. The period T25-T26 can also be referred to as a read period.

[0182] For example, the transistor M17 and a transistor included in the circuit unit 75 form a source follower circuit, and data can be read out. In this case, the data potential DS output to the wiring WX is determined according to the gate potential of the transistor M17. Specifically, the potential obtained by subtracting the threshold voltage of the transistor M17 from the gate potential of the transistor M17 is output to the wiring WX as the data potential DS, and this potential is read out by a read circuit included in the circuit unit 75.

[0183] It is also possible to configure a common source circuit with the transistor M17 and a transistor included in the circuit section 75, and to read data using a read circuit included in the circuit section 75.

[0184] At time T26, a low-level potential is applied to the line SE, which turns off the transistor M18, completing the readout of data from the pixel 82. After time T26, the readout operation of data from the next row onward is performed sequentially.

[0185] 39, the exposure period and the readout period can be set separately, so that all pixels 82 provided in the display unit 71 can be exposed simultaneously and then the data can be read out sequentially. This makes it possible to realize so-called global shutter driving. When global shutter driving is performed, it is preferable to use transistors that function as switches in the pixels 82 (particularly, transistors M15 and M16) that use oxide semiconductors, which have extremely low leakage current in a non-conducting state.

[0186] This concludes the description of an example of the method for driving pixel 82_4.

[0187] As described above, in a display device according to one embodiment of the present invention, in a pixel including a subpixel in which a forward bias voltage is applied to a light-emitting device and a reverse bias voltage is applied to a light-receiving device, the wiring EAL and another wiring can share a common function. Therefore, the number of wirings electrically connected to the pixel and the number of potentials applied to the pixel can be reduced. As a result, the layout area of ​​the pixel can be reduced, and a display device having a high-resolution display portion while having a light detection function can be provided. Furthermore, a display device having a high-resolution display portion while having a light detection function can be provided.

[0188] (Embodiment 2) In this embodiment, a display device according to one embodiment of the present invention will be described. In particular, in this embodiment, structural examples of a light-receiving device and a light-emitting device included in the display device will be described.

[0189] FIG. 40A shows an example different from the display device 10 described in the first embodiment. The display device 10A shown in FIG. 40A includes a light-emitting device 11a and a light-receiving device 12a. The display device 10A differs from the display device 10 described above mainly in that the light-emitting device 11a includes a layer 21 between the EL layer 17 and the electrode 15, and the light-receiving device 12a includes a layer 21 between the light-receiving layer 19 and the electrode 15. The layer 21 is a layer common to the light-emitting device 11a and the light-receiving device 12a, and can be referred to as a common layer. For example, it is preferable that at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer be a layer common to the light-receiving device and the light-emitting device.

[0190] 40A, in the light-emitting device 11a, the electrode 13A functions as an anode and the electrode 15 functions as a cathode, and in the light-receiving device 12a, the electrode 13B functions as a cathode and the electrode 15 functions as an anode, the layer 21 includes, for example, a layer containing a material with high electron injection properties (electron injection layer). The layer 21 can function as an electron injection layer that injects electrons from the electrode 15, which functions as a cathode, into the EL layer 17 in the light-emitting device 11a.

[0191] The layer 21, which includes a layer containing a substance with high electron injection properties (electron injection layer), does not have a specific function in the light-receiving device 12a. As described above, the layer 21 may be configured to function as an electron injection layer in the light-emitting device 11a.

[0192] A layer shared by a light-receiving device and a light-emitting device may have different functions in the light-emitting device and in the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by a light-receiving device and a light-emitting device may have the same functions in the light-emitting device and in the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0193] 40B, in the light-emitting device 11a, the electrode 13A functions as a cathode and the electrode 15 functions as an anode, and in the light-receiving device 12a, the electrode 13B functions as an anode and the electrode 15 functions as a cathode, the layer 21 includes, for example, a layer containing a material with high hole injection properties (hole injection layer). The layer 21 can function as a hole injection layer that injects holes from the electrode 15, which functions as an anode, into the EL layer 17 in the light-emitting device 11a.

[0194] The layer 21, which includes a layer containing a substance with high hole injection properties (hole injection layer), does not have any particular function in the light-receiving device 12a. As described above, the layer 21 may be configured to function as a hole injection layer in the light-emitting device 11a.

[0195] A display device of one embodiment of the present invention is shown in FIG. 40C . A display device 10B shown in FIG. 40C includes a light-emitting device 11b and a light-receiving device 12b. The EL layer 17 of the light-emitting device 11b has a stacked structure in which a layer 31A, a light-emitting layer 41, and a layer 37A are stacked in this order. The light-receiving layer 19 of the light-receiving device 12b has a stacked structure in which a layer 37B, an active layer 43, and a layer 31B are stacked in this order.

[0196] In the light-emitting device 11b, the electrode 13A functions as an anode, and the electrode 15 functions as a cathode. In the light-receiving device 12b, the electrode 13B functions as a cathode, and the electrode 15 functions as an anode. The layer 21 includes, for example, a layer containing a material with high electron injection properties (electron injection layer).

[0197] The layer 31A and the layer 31B each include, for example, a layer containing a substance with a high hole-transporting property (hole-transport layer). Furthermore, the layer 31A and the layer 31B may each include a layer containing a substance with a high hole-injecting property (hole-injection layer). When the layer 31A and the layer 31B each include a substance with a high hole-transporting property, the substance with a high hole-transporting property in the layer 31A and the substance with a high hole-transporting property in the layer 31B may be the same as or different from each other. Similarly, when the layer 31A and the layer 31B each include a substance with a high hole-injecting property, the substance with a high hole-injecting property in the layer 31A and the substance with a high hole-injecting property in the layer 31B may be the same as or different from each other. Furthermore, the layer 31A and the layer 31B may each have a stacked structure.

[0198] The layer 37A and the layer 37B each include, for example, a layer containing a substance with high electron transport properties (electron transport layer). Furthermore, the layer 37A and the layer 37B may each include a layer containing a substance with high electron injection properties (electron injection layer). When the layer 37A and the layer 37B each include a substance with high electron transport properties, the substance with high electron transport properties in the layer 37A and the substance with high electron transport properties in the layer 37B may be the same or different. Similarly, when the layer 37A and the layer 37B each include a substance with high electron injection properties, the substance with high electron injection properties in the layer 37A and the substance with high electron injection properties in the layer 37B may be the same or different. Furthermore, the layer 37A and the layer 37B may each have a stacked structure.

[0199] The active layer 43 includes a semiconductor, and it is particularly preferred that the active layer 43 includes an organic semiconductor.

[0200] The light-emitting layer 41 contains a light-emitting material that emits light. In the light-emitting device 11, the structure including the layer 31A, the light-emitting layer 41, and the layer 37A provided between a pair of electrodes (electrode 13A and electrode 15) can function as a single light-emitting unit, and the structure of the light-emitting device 11b may be referred to as a single structure in this specification and the like.

[0201] The light-emitting device 11b includes, in order from the electrode 13A side, a layer 31A having a layer containing a substance with high hole transport properties (hole transport layer), a light-emitting layer 41, and a layer 37A having a layer containing a substance with high electron transport properties (electron transport layer). The light-receiving device 12b includes, in order from the electrode 13B side, a layer 37B having a layer containing a substance with high electron transport properties (electron transport layer), an active layer 43, and a layer 31B having a layer containing a substance with high hole transport properties (hole transport layer). In a display device according to one embodiment of the present invention, the stacking order of the layer containing a substance with high electron transport properties (electron transport layer) and the layer containing a substance with high hole transport properties (hole transport layer), which sandwich the light-emitting layer and the active layer, is reversed between the light-emitting device and the light-receiving device. This configuration can suppress side leakage between the light-emitting device and the light-receiving device.

[0202] FIG. 40D shows a display device configuration different from the display device 10B described above. The display device 10C shown in FIG. 40D includes a light-emitting device 11c and a light-receiving device 12c. The light-emitting device 11c differs from the light-emitting device 11b described above mainly in that the layers constituting the EL layer 17 are stacked in the reversed order. The light-receiving device 12c differs from the light-receiving device 12b described above mainly in that the layers constituting the light-receiving layer 19 are stacked in the reversed order.

[0203] The EL layer 17 of the light-emitting device 11c has a layered structure in which a layer 37A, a light-emitting layer 41, and a layer 31A are stacked in this order. The light-receiving layer 19 of the light-receiving device 12c has a layered structure in which a layer 31B, an active layer 43, and a layer 37B are stacked in this order.

[0204] In the light-emitting device 11b, the electrode 13A functions as a cathode, and the electrode 15 functions as an anode. In the light-receiving device 12, the electrode 13B functions as an anode, and the electrode 15 functions as a cathode. The layer 21 includes, for example, a layer containing a material with high hole injection properties (hole injection layer).

[0205] The following describes a configuration that differs from the display device described above, taking as an example a configuration in which electrode 13A functions as an anode and electrode 15 functions as a cathode in the light-emitting device, and electrode 13B functions as a cathode and electrode 15 functions as an anode in the light-receiving device.

[0206] A display device of one embodiment of the present invention is shown in FIG. 41A. A display device 10D shown in FIG. 41A includes a light-emitting device 11d and a light-receiving device 12b. The light-emitting device 11d includes a light-emitting layer 41 having a stacked structure in which a light-emitting layer 41a, a light-emitting layer 41b, and a light-emitting layer 41c are stacked in this order. A structure in which multiple light-emitting layers (e.g., a light-emitting layer 41a, a light-emitting layer 41b, and a light-emitting layer 41c) are provided between the layer 31A and the layer 37A can also be called a single structure.

[0207] A display device according to one embodiment of the present invention is shown in Fig. 41B. A display device 10E shown in Fig. 41B includes a light-emitting device 11e and a light-receiving device 12e.

[0208] The light-emitting device 11e differs from the light-emitting device 11b described above mainly in that the layer 31A has a stacked structure of a layer 33A and a layer 35A on the layer 33A. The light-receiving device 12e differs from the light-receiving device 12b described above mainly in that the layer 31B has a stacked structure of a layer 35B and a layer 33B on the layer 35B.

[0209] The layer 33A and the layer 33B each include, for example, a layer (hole injection layer) containing a substance with high hole injection properties. The substance with high hole injection properties contained in the layer 33A and the substance with high hole injection properties contained in the layer 33B may be the same or different.

[0210] The layer 35A and the layer 35B each include, for example, a layer containing a substance with a high hole-transporting property (a hole-transporting layer). The substance with a high hole-transporting property contained in the layer 35A and the substance with a high hole-transporting property contained in the layer 35B may be the same as or different from each other.

[0211] Such a layer structure enables the light-emitting device 11e to efficiently inject carriers into the light-emitting layer 41 and to increase the efficiency of carrier recombination in the light-emitting layer 41. As described above, in the light-receiving device 12e, the layer 33B functions as a hole transport layer.

[0212] A display device according to one embodiment of the present invention is shown in Fig. 41C. A display device 10F shown in Fig. 41C includes a light-emitting device 11f and a light-receiving device 12f.

[0213] The light-emitting device 11f differs from the light-emitting device 11e described above mainly in that it has an optical adjustment layer 39A between the electrode 13A and the EL layer 17. The light-receiving device 12f differs from the light-receiving device 12e described above mainly in that it has an optical adjustment layer 39B between the electrode 13B and the light-receiving layer 19.

[0214] Optical adjustment layers 39A and 39B are preferably made of a conductive material that is highly transparent to visible light. Optical adjustment layers 39A and 39B are more preferably made of a conductive material that is highly transparent to visible light and infrared light. Optical adjustment layers 39A and 39B can be made of a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, indium tin oxide containing silicon, or indium zinc oxide containing silicon.

[0215] Here, electrodes 13A and 13B are made of conductive films that are reflective to visible light, and electrode 15 is made of a conductive film that is reflective and transparent to visible light. This allows light-emitting device 11f and light-receiving device 12f to have a so-called microcavity structure (microresonator structure). Light-emitting device 11f can be a light-emitting device with high color purity by intensifying light of a specific wavelength. Light-receiving device 12f can be a light-receiving device with high sensitivity by intensifying light of a specific wavelength to be detected.

[0216] The optical path lengths of the light-emitting device 11f and the light-receiving device 12f can be made different by making the optical adjustment layer 39A and the optical adjustment layer 39B have different thicknesses. Each optical adjustment layer may be a conductive film having a different thickness, or may have a single-layer structure or a multiple-layer structure.

[0217] A display device according to one embodiment of the present invention is shown in Fig. 42. A display device 10G shown in Fig. 42 includes a light-emitting device 11g and a light-receiving device 12b.

[0218] Light-emitting device 11g has a layered structure in which an EL layer 47, an intermediate layer 50, and an EL layer 17 are stacked in this order between electrode 13A and electrode 15. The EL layer 47 has a layered structure in which a layer 51A, an emitting layer 61, and a layer 57A are stacked in this order.

[0219] Note that layer 51A, light-emitting layer 61, and layer 57A may each have a stacked structure. The description of layer 31A can be referenced for layer 51A, and therefore a detailed description thereof will be omitted. The description of light-emitting layer 61 can be referenced for light-emitting layer 41, and therefore a detailed description thereof will be omitted. The description of layer 57A can be referenced for layer 37A, and therefore a detailed description thereof will be omitted.

[0220] A configuration in which multiple light-emitting units (EL layer 17 and EL layer 47) are connected in series via an intermediate layer 50 (also referred to as a charge generation layer), such as light-emitting device 11g, may be referred to as a tandem structure in this specification. The tandem structure may also be referred to as a stack structure. The tandem structure allows for a light-emitting device capable of emitting light with high brightness.

[0221] The light-emitting device can emit light in red, green, blue, cyan, magenta, yellow, or white, depending on the material of the EL layer 17. Furthermore, the color purity can be further improved by providing the light-emitting device with a microcavity structure.

[0222] A light-emitting device that emits white light preferably has a configuration in which the light-emitting layer 41 contains two or more types of light-emitting materials. When using a configuration containing two light-emitting materials, the light-emitting materials may be selected so that the emitted light has a complementary color relationship. For example, by making the emitted color of the first light-emitting layer and the emitted color of the second light-emitting layer complementary, a light-emitting device that emits white light as a whole can be obtained. When using a configuration containing three or more light-emitting materials, the emitted colors can be mixed to produce white light. The same applies to light-emitting devices having two or more light-emitting layers. For example, the light-emitting device 11d shown in FIG. 41A can be realized as a single-structure white light-emitting device by mixing the emitted colors of the light-emitting layers 41a, 41b, and 41c.

[0223] The light-emitting layer preferably contains two or more light-emitting materials that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. Alternatively, it is preferable that the light-emitting layer contains two or more light-emitting materials, and the light emitted by each of the light-emitting materials contains spectral components of two or more colors of R, G, and B.

[0224] The combination of the light-emitting device and the light-receiving device is not particularly limited. A display device may include one or more of the above-described light-emitting devices and one or more of the above-described light-receiving devices. For example, a display device may include the light-emitting device 11e and the light-receiving device 12c.

[0225] An example of the configuration of a light-emitting device and a light-receiving device provided in one pixel of a display device is shown in Fig. 43A. Fig. 43A is a schematic cross-sectional view of a pixel 80 having three sub-pixels of colors, RGB. The schematic cross-sectional view of pixel 80 shows light-emitting device 11R, light-emitting device 11G, light-emitting device 11B, and light-receiving device 12PS.

[0226] Note that Figure 43A shows an example in which the configuration of light-emitting device 11e shown in Figure 41B is applied to light-emitting device 11R, light-emitting device 11G, and light-emitting device 11B, and the configuration of light-receiving device 12e shown in Figure 41B is applied to light-receiving device 12PS.

[0227] The light-emitting device 11R can be applied to the light-emitting device included in the subpixel 81R and has a function of emitting red light. The light-emitting device 11R has a layered structure in which an electrode 13a, an EL layer 17R, a layer 21, and an electrode 15 are layered in this order on a substrate 23. The EL layer 17R has a layered structure in which a layer 33a, a layer 35a, a light-emitting layer 41R, and a layer 37a are layered in this order.

[0228] The layer 33a includes a layer containing a substance with high hole-injecting properties (hole-injecting layer). The layer 35a includes a layer containing a substance with high hole-transporting properties (hole-transporting layer). The light-emitting layer 41R includes a light-emitting substance that emits red light. The layer 37a includes a layer containing a substance with high electron-transporting properties (electron-transporting layer). The layer 21 includes a layer containing a substance with high electron-injecting properties (electron-injecting layer).

[0229] In the light-emitting device 11R, the electrode 13a functions as an anode, and the electrode 15 functions as a cathode. That is, the potential supplied to the electrode 13a is higher than the potential supplied to the electrode 15.

[0230] The light-emitting device 11G can be applied to the light-emitting device ELG of the subpixel 81G and has a function of emitting green light. The light-emitting device 11G has a layered structure in which an electrode 13b, an EL layer 17G, a layer 21, and an electrode 15 are layered in this order on a substrate 23. The EL layer 17G has a layered structure in which a layer 33b, a layer 35b, a light-emitting layer 41G, and a layer 37b are layered in this order.

[0231] Layer 33b includes a layer containing a substance with high hole-injecting properties (hole-injecting layer). Layer 35b includes a layer containing a substance with high hole-transporting properties (hole-transporting layer). Light-emitting layer 41G includes a light-emitting substance that emits green light. Layer 37b includes a layer containing a substance with high electron-transporting properties (electron-transporting layer).

[0232] In the light-emitting device 11G, the electrode 13b functions as an anode, and the electrode 15 functions as a cathode. That is, the potential supplied to the electrode 13b is higher than the potential supplied to the electrode 15.

[0233] Light-emitting device 11B can be applied to light-emitting device ELB of subpixel 81B and has a function of emitting blue light. Light-emitting device 11B has a layered structure in which electrode 13c, EL layer 17B, layer 21, and electrode 15 are layered in this order on substrate 23. EL layer 17B has a layered structure in which layer 33c, layer 35c, light-emitting layer 41B, and layer 37c are layered in this order.

[0234] Layer 33c includes a layer containing a substance with high hole-injecting properties (hole-injecting layer). Layer 35c includes a layer containing a substance with high hole-transporting properties (hole-transporting layer). Light-emitting layer 41B includes a light-emitting substance that emits blue light. Layer 37c includes a layer containing a substance with high electron-transporting properties (electron-transporting layer).

[0235] In the light-emitting device 11B, the electrode 13c functions as an anode, and the electrode 15 functions as a cathode. That is, the potential supplied to the electrode 13c is higher than the potential supplied to the electrode 15.

[0236] The light-receiving device 12PS can be applied to the light-receiving device 12 included in the subpixel 82PS, and has the function of detecting visible light and infrared light. The light-receiving device 12PS has a layered structure in which an electrode 13d, a light-receiving layer 19PS, a layer 21, and an electrode 15 are layered in this order on a substrate 23. The light-receiving layer 19PS has a layered structure in which a layer 37d, an active layer 43, a layer 35d, and a layer 33d are layered in this order.

[0237] The layer 37d includes a layer containing a substance with high electron transport properties (electron transport layer). The active layer 43PS includes a semiconductor. The active layer 43PS preferably includes an organic semiconductor. The layer 35d includes a layer containing a substance with high hole transport properties (hole transport layer). The layer 33d includes a layer containing a substance with high hole injection properties (hole injection layer). In the light-receiving device 12PS, the layer 33d functions as a hole transport layer.

[0238] In the light-receiving device 12PS, the electrode 13d functions as a cathode, and the electrode 15 functions as an anode. That is, the potential supplied to the electrode 13d is higher than the potential supplied to the electrode 15. In the light-receiving device 12PS, a reverse bias is applied between the electrode 13d and the electrode 15.

[0239] Electrodes 13a, 13b, 13c, and 13d are provided on a substrate 23. Electrodes 13a, 13b, 13c, and 13d can be formed, for example, by processing a conductive film formed on the substrate 23 into an island shape. Electrodes 13a, 13b, 13c, and 13d each function as a pixel electrode. The above description of electrodes 13A and 13B can be referenced for electrodes 13a, 13b, 13c, and 13d, and a detailed description thereof will be omitted. Electrode 15 functions as a common electrode. The above description of electrode 15 can be referenced, and a detailed description thereof will be omitted.

[0240] For layers 33a, 33b, 33c, and 33d, the description of layers 33A and 33B above can be referenced, and detailed descriptions thereof will be omitted. For layers 35a, 35b, 35c, and 35d, the description of layers 35A and 35B above can be referenced, and detailed descriptions thereof will be omitted. For layers 37a, 37b, 37c, and 37d, the description of layers 37A and 37B above can be referenced, and detailed descriptions thereof will be omitted. For layer 21, which is a common layer, the description above can be referenced, and detailed descriptions thereof will be omitted.

[0241] Figure 43B shows, with arrows, a schematic representation of red (R) light emitted from light-emitting device 11R, green (G) light emitted from light-emitting device 11G, blue (B) light emitted from light-emitting device 11B, and light incident on light-receiving device 12PS.

[0242] FIG. 44A shows an example of a configuration different from the pixel 80 described above. The pixel 80A shown in FIG. 44A has a light-emitting device 11R, a light-emitting device 11G, a light-emitting device 11B, a light-emitting device 11IR, and a light-receiving device 12PS. FIG. 44A is a schematic cross-sectional view showing the configuration of the light-emitting device 11R, the light-emitting device 11G, the light-emitting device 11B, the light-emitting device 11IR, and the light-receiving device 12PS. The pixel 80A differs mainly from the pixel 80 shown in FIG. 43A etc. in that it has a light-emitting device 11IR.

[0243] The light-emitting device 11IR has a function of emitting infrared light. The light-emitting device 11IR has a layered structure in which an electrode 13e, an EL layer 17IR, a layer 21, and an electrode 15 are layered in this order on a substrate 23. The EL layer 17IR has a layered structure in which a layer 33e, a layer 35e, a light-emitting layer 41IR, and a layer 37e are layered in this order.

[0244] The layer 33e includes a layer containing a substance with high hole-injecting properties (hole-injecting layer). The layer 35e includes a layer containing a substance with high hole-transporting properties (hole-transporting layer). The light-emitting layer 41IR includes a light-emitting substance that emits light in the infrared wavelength region. The layer 37e includes a layer containing a substance with high electron-transporting properties (electron-transporting layer).

[0245] In the light-emitting device 11IR, the electrode 13e functions as an anode, and the electrode 15 functions as a cathode. That is, the potential supplied to the electrode 13e is higher than the potential supplied to the electrode 15.

[0246] The electrode 13e is provided on the substrate 23. The electrode 13e can be formed in the same process as the electrodes 13a, 13b, 13c, and 13d. The electrode 13e functions as a pixel electrode. The description of the electrodes 13A and 13B can be referred to for the electrode 13e, and therefore a detailed description thereof will be omitted.

[0247] The detailed description of layer 33e can be found in the descriptions of layers 33A and 33B, and will not be repeated here. The detailed description of layer 35e can be found in the descriptions of layers 35A and 35B, and will not be repeated here. The detailed description of layer 37e can be found in the descriptions of layers 37A and 37B, and will not be repeated here.

[0248] Figure 44B shows, with arrows, a schematic representation of red (R) light emitted from light-emitting device 11R, green (G) light emitted from light-emitting device 11G, blue (B) light emitted from light-emitting device 11B, infrared (IR) light emitted from light-emitting device 11IR, and light incident on light-receiving device 12PS.

[0249] FIG. 45A shows an example of a configuration different from the pixel 80 described above. Pixel 80B shown in FIG. 45A has light-emitting device 11R, light-emitting device 11G, light-emitting device 11B, light-receiving device 12PS, and light-receiving device 12IRS. FIG. 45A is a schematic cross-sectional view showing the configurations of light-emitting device 11R, light-emitting device 11G, light-emitting device 11B, light-receiving device 12PS, and light-receiving device 12IRS. Pixel 80B differs mainly from pixel 80 shown in FIG. 43A etc. in the configuration of the light-receiving device.

[0250] The light receiving device 12PS of the pixel 80 has a function of receiving visible light, and the light receiving device 12IRS has a function of receiving infrared light.

[0251] The light-receiving device 12IRS has a layered structure in which an electrode 13f, a light-receiving layer 19IRS, a layer 21, and an electrode 15 are layered in this order on a substrate 23. The light-receiving layer 19IRS has a layered structure in which a layer 37f, an active layer 43IRS, a layer 35f, and a layer 33f are layered in this order.

[0252] The layer 37f includes a layer containing a substance with high electron transport properties (electron transport layer). The active layer 43IRS includes a semiconductor. The active layer 43IRS preferably includes an organic semiconductor. The layer 35f includes a layer containing a substance with high hole transport properties (hole transport layer). The layer 33f includes a layer containing a substance with high hole injection properties (hole injection layer). In the light-receiving device 12IRS, the layer 33f functions as a hole transport layer.

[0253] In the light receiving device 12IRS, the electrode 13f functions as a cathode, and the electrode 15 functions as an anode. That is, the potential supplied to the electrode 13f is higher than the potential supplied to the electrode 15.

[0254] The electrode 13f is provided on the substrate 23. The electrode 13f can be formed in the same process as the electrodes 13a, 13b, 13c, 13d, and 13e. The electrode 13e functions as a pixel electrode. The description of the electrodes 13A and 13B can be referred to for the electrode 13f, and therefore a detailed description thereof will be omitted.

[0255] The detailed description of layer 33f can be referenced to the descriptions of layers 33A and 33B above, and therefore will be omitted. The detailed description of layer 35f can be referenced to the descriptions of layers 35A and 35B above, and therefore will be omitted. The detailed description of layer 37f can be referenced to the descriptions of layers 37A and 37B above, and therefore will be omitted.

[0256] Figure 45B shows, with arrows, a schematic representation of red (R) light emitted from light-emitting device 11R, green (G) light emitted from light-emitting device 11G, blue (B) light emitted from light-emitting device 11B, light incident on light-receiving device 12PS, and light incident on light-receiving device 12IRS.

[0257] FIG. 46A shows an example of a configuration different from the pixel 80B described above. The pixel 80C shown in FIG. 46A has a light-emitting device 11R, a light-emitting device 11G, a light-emitting device 11B, a light-emitting device 11IR, a light-receiving device 12PS, and a light-receiving device 12IRS. FIG. 46A is a schematic cross-sectional view showing the configuration of the light-emitting device 11R, the light-emitting device 11G, the light-emitting device 11B, the light-emitting device 11IR, the light-receiving device 12PS, and the light-receiving device 12IRS. The pixel 80C differs mainly from the pixel 80B shown in FIG. 45A etc. in that it has a light-emitting device 11IR.

[0258] Figure 46B shows, with arrows, a schematic representation of red (R) light emitted from light-emitting device 11R, green (G) light emitted from light-emitting device 11G, blue (B) light emitted from light-emitting device 11B, infrared (IR) light emitted from light-emitting device 11IR, light incident on light-receiving device 12PS, and light incident on light-receiving device 12IRS.

[0259] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0260] (Embodiment 3) In this embodiment mode, application modes and the like of a display device including the light-emitting device and the light-receiving device described in the above embodiment modes will be described.

[0261] 47A is a schematic diagram of a display device of one embodiment of the present invention. A display device 200 shown in FIG. 47A includes a substrate 201, a substrate 202, a light-emitting device 211R, a light-emitting device 211G, a light-emitting device 211B, a light-receiving device 212PS, a functional layer 203, and the like.

[0262] The light-emitting device 211R, the light-emitting device 211G, the light-emitting device 211B, and the light-receiving device 212PS are provided between the substrate 201 and the substrate 202. The light-emitting device 211R, the light-emitting device 211G, and the light-emitting device 211B emit red (R), green (G), or blue (B) light, respectively. The light-emitting device 211R, the light-emitting device 211G, and the light-emitting device 211B may be the light-emitting devices described above. The light-receiving device 212PS may be the light-receiving device described above. Note that, hereinafter, when there is no need to particularly distinguish between the light-emitting device 211R, the light-emitting device 211G, and the light-emitting device 211B, they may be referred to as the light-emitting device 211.

[0263] 47A shows a state in which finger 220 touches the surface of substrate 202. A portion of light emitted from a light-emitting device (for example, light-emitting device 211G) is reflected at the contact point between substrate 202 and finger 220. Then, a portion of the reflected light is incident on light-receiving device 212PS, which makes it possible to detect that finger 220 has touched substrate 202. In other words, display device 200 can function as a touch panel.

[0264] The functional layer 203 has a circuit for driving the light-emitting device 211R, the light-emitting device 211G, and the light-emitting device 211B, and a circuit for driving the light-receiving device 212PS. The functional layer 203 is provided with switches, transistors, capacitors, wiring, and the like. Note that when the light-emitting device 211R, the light-emitting device 211G, the light-emitting device 211B, and the light-receiving device 212PS are driven by a passive matrix method, the functional layer 203 may be configured without the switches and transistors.

[0265] Display device 200 can detect, for example, the fingerprint of finger 220. Fig. 47B is a schematic enlarged view of the contact portion between substrate 202 and finger 220. Fig. 47B also shows light-emitting devices 211 and light-receiving devices 212 arranged alternately.

[0266] A fingerprint is formed by concave and convex portions of finger 220. Therefore, the convex portions of the fingerprint are in contact with substrate 202 as shown in FIG.

[0267] Light reflected from a surface or interface can be specularly reflected or diffusely reflected. Specularly reflected light is highly directional light, with the angle of incidence and the angle of reflection matching, while diffusely reflected light is less directional light, with its intensity less dependent on the angle. The diffuse reflection component is dominant in the light reflected from the surface of the finger 220. On the other hand, the specular reflection component is dominant in the light reflected from the interface between the substrate 202 and the atmosphere.

[0268] The intensity of light reflected by the contact or non-contact surface between finger 220 and substrate 202 and incident on light receiving device 212 located directly below them is the sum of specularly reflected light and diffusely reflected light. As described above, at the concave portions of finger 220, substrate 202 and finger 220 do not come into contact, so specularly reflected light (indicated by solid arrows) is dominant, whereas at the convex portions, they come into contact, so diffusely reflected light (indicated by dashed arrows) from finger 220 is dominant. Therefore, the intensity of light received by light receiving device 212 located directly below the concave portions is higher than that of light receiving device 212 located directly below the convex portions. This makes it possible to capture an image of the fingerprint of finger 220.

[0269] A clear fingerprint image can be obtained by arranging the light receiving devices 212 at an interval smaller than the distance between two convex portions of a fingerprint, preferably the distance between adjacent concave and convex portions. Since the distance between concave and convex portions of a human fingerprint is approximately 200 μm, for example, the interval between the light receiving devices 212 is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and is 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0270] Fig. 47C shows an example of a fingerprint image captured by display device 200. In Fig. 47C, the outline of finger 220 is indicated by a dashed line and the outline of contact portion 224 is indicated by a dashed line within imaging range 227. Within contact portion 224, a fingerprint 222 with high contrast can be captured due to differences in the amount of light incident on light receiving device 212.

[0271] The display device 200 can also function as a touch panel or a pen tablet. Fig. 47D shows a state in which the tip of a stylus 229 is in contact with the substrate 202 and is slid in the direction of the dashed arrow.

[0272] As shown in Figure 47D, the diffuse reflected light diffused by the tip of stylus 229 and the contact surface of substrate 202 is incident on light receiving device 212 located at the part overlapping with the contact surface, thereby enabling the position of the tip of stylus 229 to be detected with high accuracy.

[0273] 47E shows an example of a trajectory 226 of the stylus 229 detected by the display device 200. The display device 200 is capable of detecting the position of a detectable object such as the stylus 229 with high positional accuracy, and therefore is also capable of performing high-resolution drawing in a drawing application or the like. Furthermore, unlike the case where a capacitance-type touch sensor, an electromagnetic induction-type touch pen, or the like is used, the position of even a highly insulating detectable object can be detected, and therefore the material of the tip of the stylus 229 is not a factor, and various writing implements (for example, a brush, a glass pen, or a feather pen) can be used.

[0274] The light receiving device 212PS can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). FIG. 48 shows how light 31 emitted from a light emitting device (e.g., light emitting device 211G) is reflected by an object (e.g., finger 220), and the reflected light 32 is incident on the light receiving device 212PS. Although the object is not in contact with the display device 200, the object can be detected using the light receiving device 212PS. Note that the wavelength of light to be detected by the light receiving device 212PS may be determined appropriately depending on the application.

[0275] A touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when the display device and the object are in direct contact with each other. A near-touch sensor can detect an object even if the object does not come into contact with the display device. For example, a configuration in which the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm, is preferable. This configuration enables the display device to be operated without the object directly touching it, in other words, it enables non-contact (touchless) operation of the display device. This configuration reduces the risk of the display device becoming dirty or scratched, or enables the display device to be operated without the object directly touching dirt (e.g., dust or viruses) attached to the display device.

[0276] The display device of one embodiment of the present invention can vary the refresh rate. For example, the refresh rate can be adjusted (for example, within a range of 1 Hz to 240 Hz) depending on the content displayed on the display device, thereby reducing power consumption. Furthermore, the drive frequency of the touch sensor or near-touch sensor may be changed depending on the refresh rate. For example, when the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near-touch sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration enables low power consumption and an increased response speed of the touch sensor or near-touch sensor.

[0277] It is preferable that the light receiving device 212PS is provided in all pixels of the display device. By providing the light receiving device 212PS in all pixels, touch can be detected with high accuracy. Note that the light receiving device 212PS may be provided in some pixels. For example, the display device may have pixels provided with both a light emitting device and a light receiving device, and pixels provided with a light receiving device (without a light emitting device only).

[0278] Fig. 49A shows an example of a configuration different from the above-described display device 200. The display device 200A shown in Fig. 49A includes a substrate 201, a substrate 202, a light-emitting device 211R, a light-emitting device 211G, a light-emitting device 211B, a light-emitting device 211IR, a light-receiving device 212PS, and a functional layer 203. The display device 200A differs from the above-described display device 200 mainly in that the display device 200A includes the light-emitting device 211IR.

[0279] The light emitting device 211R, the light emitting device 211G, the light emitting device 211B, and the light receiving device 212PS are provided between the substrate 201 and the substrate 202. The light emitting device 211IR emits infrared light. The light emitting device described above can be used as the light emitting device 211IR.

[0280] 49A shows a state in which finger 220 touches the surface of substrate 202. A portion of light emitted from a light-emitting device (for example, light-emitting device 211IR) is reflected at the contact point between substrate 202 and finger 220. A portion of the reflected light is then incident on light-receiving device 212PS, making it possible to detect that finger 220 has touched substrate 202. For example, by emitting infrared light from light-emitting device 211IR and detecting the infrared light with light-receiving device 212PS, touch detection becomes possible even in a dark place.

[0281] The display device 200A can display an image on the display unit using the light-emitting device 211R, the light-emitting device 211G, and the light-emitting device 211B, and can perform touch detection on the display unit using the light-emitting device 211IR and the light-receiving device 212PS. The display device 200A can also display an image on the display unit and can also capture an image on the display unit.

[0282] 49B shows how light 31 emitted from light-emitting device 211G is reflected by an object (e.g., finger 220) and the reflected light 32 is incident on light-receiving device 212PS. FIG. 49C shows how light 31 emitted from light-emitting device 211IR is reflected by an object (e.g., finger 220) and the reflected light 32 is incident on light-receiving device 212PS. Although the object is not in contact with display device 200A, the object can be detected using light-receiving device 212PS.

[0283] Fig. 50A shows an example of a configuration different from the above-described display device 200A. Display device 200B shown in Fig. 50A includes substrate 201, substrate 202, light-emitting device 211R, light-emitting device 211G, light-emitting device 211B, light-emitting device 211IR, light-receiving device 212PS, light-receiving device 212IRS, and functional layer 203. Display device 200B differs from display device 200A described above mainly in the configuration of the light-receiving device.

[0284] The light emitting device 211R, the light emitting device 211G, the light emitting device 211B, the light receiving device 212PS, and the light receiving device 212IRS are provided between the substrate 201 and the substrate 202. The light receiving device 212PS receives visible light. The light receiving device 212IRS receives infrared light. The light receiving device 212PS and the light receiving device 212IRS can use the light receiving devices described above.

[0285] 50A shows a state in which finger 220 touches the surface of substrate 202. A portion of the light emitted by a light-emitting device (for example, light-emitting device 211IR) is reflected at the contact point between substrate 202 and finger 220. Then, a portion of the reflected light is incident on light-receiving device 212IRS, making it possible to detect that finger 220 has touched substrate 202.

[0286] 50B shows how light 31 emitted from light-emitting device 211IR is reflected by an object (e.g., finger 220) and the reflected light 32 is incident on light-receiving device 212IRS. FIG. 50C shows how light 31 emitted from light-emitting device 211G is reflected by an object (e.g., finger 220) and the reflected light 32 is incident on light-receiving device 212PS. Although the object is not in contact with display device 200B, the object can be detected using light-receiving device 212PS or light-receiving device 212IRS.

[0287] The area of ​​the light receiving region of the light receiving device 212PS (hereinafter also referred to as the light receiving area) is preferably smaller than the light receiving area of ​​the light receiving device 212IRS. By reducing the light receiving area of ​​the light receiving device 212PS, that is, by narrowing the imaging range, the light receiving device 212PS can capture images with higher resolution than the light receiving device 212IRS. In this case, the light receiving device 212PS can be used for imaging for personal authentication using fingerprints, palm prints, irises, pulse shapes (including vein shapes and artery shapes), faces, or the like. Note that the wavelength of light to be detected by the light receiving device 212PS may be determined appropriately depending on the application.

[0288] The method of detecting an object may be selected depending on the function due to the difference in detection accuracy between the light receiving device 212PS and the light receiving device 212IRS. For example, the scrolling function of the display screen may be realized by a near-touch sensor function using the light receiving device 212IRS, and the input function using a keyboard displayed on the screen may be realized by a high-definition touch sensor function using the light receiving device 212PS.

[0289] By incorporating two types of light-receiving devices into one pixel, two additional functions can be added in addition to the display function, making it a multi-functional display device.

[0290] In order to capture high-resolution images, it is preferable that the light receiving devices 212PS are provided in all pixels of the display device. On the other hand, the light receiving devices 212IRS used in touch sensors or near-touch sensors do not require higher accuracy than detection using the light receiving devices 212PS, so they may be provided in some of the pixels of the display device. The detection speed can be increased by reducing the number of light receiving devices 212IRS provided in the display device compared to the number of light receiving devices 212PS.

[0291] As described above, the display device of this embodiment can be a multi-functional display device by incorporating a light-emitting device and a light-receiving device in one pixel. For example, it is possible to realize a display device having a high-resolution imaging function and a sensing function such as a touch sensor or a near-touch sensor.

[0292] A display device according to one embodiment of the present invention may emit light of a specific color and receive light reflected by an object. Fig. 51A shows, with arrows, red light emitted from the display device and red light reflected by an object (here, finger 220) and incident on the display device. Fig. 51B shows, with arrows, infrared light emitted from the display device and infrared light reflected by an object (here, finger 220) and incident on the display device.

[0293] The transmittance of the object to red light can be measured by emitting red light while the object is in contact with or close to the display device and allowing the reflected light from the object to enter the display device. Similarly, the transmittance of the object to infrared light can be measured by emitting infrared light while the object is in contact with or close to the display device and allowing the reflected light from the object to enter the display device.

[0294] 51C is an enlarged view of region P indicated by the dashed-dotted line in FIG. 51A. Light 31 emitted from light-emitting device 211R is scattered by the surface and internal biological tissue of finger 220, and some of the scattered light travels from inside the body toward light-receiving device 212PS. This scattered light passes through blood vessel 91, and the transmitted light 32 enters light-receiving device 212PS.

[0295] Similarly, the infrared light emitted from the light-emitting device 211IR is scattered by the surface and internal biological tissue of the finger 220, and some of the scattered infrared light travels from inside the biological tissue toward the light-receiving device 212IRS. This scattered infrared light passes through the blood vessel 91, and the transmitted infrared light enters the light-receiving device 212IRS.

[0296] Here, light 32 is light that has passed through biological tissue 93 and blood vessels 91 (arteries and veins). Because arterial blood pulsates with the heartbeat, light absorption by the arteries varies according to the heartbeat. On the other hand, because biological tissue 93 and veins are not affected by the heartbeat, light absorption by the biological tissue 93 and light absorption by the veins are constant. Therefore, by removing components that remain constant over time from the light 32 incident on the display device, the light transmittance of the arteries can be calculated. In addition, the transmittance of red light is lower for hemoglobin that is not bound to oxygen (also called deoxyhemoglobin) than for hemoglobin that is bound to oxygen (also called oxygenated hemoglobin). The transmittance of infrared light is similar for oxygenated hemoglobin and deoxyhemoglobin. By measuring the transmittance of the artery to red light and the transmittance of the artery to infrared light, the ratio of oxygenated hemoglobin to the sum of oxygenated hemoglobin and deoxyhemoglobin, that is, oxygen saturation (hereinafter also referred to as peripheral oxygen saturation (SpO2)), can be calculated. In this way, the display device according to one embodiment of the present invention can function as a reflective pulse oximeter.

[0297] For example, when a finger touches a display unit of a display device, position information of the area touched by the finger is acquired. Then, red light is emitted from pixels in the area touched by the finger and in the vicinity thereof, and the transmittance of the artery for the red light is measured. Next, infrared light is emitted and the transmittance of the artery for the infrared light is measured, thereby calculating oxygen saturation. The order in which the transmittance for red light and the transmittance for infrared light are measured is not particularly limited. The transmittance for infrared light may be measured first, and then the transmittance for red light. While an example of calculating oxygen saturation using a finger has been described here, one embodiment of the present invention is not limited thereto. Oxygen saturation can also be calculated using a site other than a finger. For example, oxygen saturation can be calculated by measuring the transmittance for red light and the transmittance for infrared light while the palm is in contact with the display unit of a display device.

[0298] 52A illustrates an example of an electronic device to which the display device of one embodiment of the present invention is applied. A mobile information terminal 400 illustrated in FIG. 52A can be used as, for example, a smartphone. The mobile information terminal 400 includes a housing 402 and a display portion 404. The display device described above can be used for the display portion 404. For example, the display device 200B described above can be suitably used for the display portion 404.

[0299] Fig. 52A shows a state in which a finger 406 is in contact with a display unit 404 of a mobile information terminal 400. In Fig. 52A, the area where the touch is detected and an area 408 nearby are indicated by dashed lines.

[0300] The mobile information terminal 400 emits red light from the pixels in the region 408 and detects the red light that enters the display unit 404. Similarly, the oxygen saturation of the finger 406 can be measured by emitting infrared light from the pixels in the region 408 and detecting the infrared light that enters the display unit 404. FIG. 52B shows the pixels in the region 408 being lit. In FIG. 52B, the finger 406 is shown as a transparent image, with only the outline indicated by a dashed line, and the region 408 is hatched. As shown in FIG. 52B, the lit region 408 is hidden by the finger 406 and is difficult for the user to see. This allows oxygen saturation to be measured without causing stress to the user. The mobile information terminal 400 can also measure oxygen saturation at any position within the display unit 404.

[0301] The obtained oxygen saturation level may be displayed on display unit 404. FIG. 52C shows an example of image 409 indicating oxygen saturation level displayed in area 407. In FIG. 52C, the text "SpO2 97%" is shown as an example of image 409. Note that image 409 may be an image or may include an image and text. Furthermore, area 407 may be provided at any position on display unit 404.

[0302] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0303] (Fourth embodiment) In this embodiment, a display device of one embodiment of the present invention and a manufacturing method thereof will be described with reference to FIGS.

[0304] When manufacturing a display device having light-emitting devices and light-receiving devices that emit light of different colors, it is necessary to form a plurality of light-emitting layers and active layers in island shapes.

[0305] For example, island-shaped light-emitting layers and active layers can be formed by vacuum deposition using a metal mask (also called a shadow mask). However, with this method, deviations from the design occur in the shape and position of the island-shaped light-emitting layers and active layers due to various factors, such as the accuracy of the metal mask, misalignment between the metal mask and the substrate, deflection of the metal mask, and the spread of the contours of the formed film due to vapor scattering, making it difficult to achieve high-definition displays and high aperture ratios.

[0306] In a manufacturing method of a display device according to one embodiment of the present invention, an island-shaped pixel electrode (which can also be referred to as a lower electrode) is formed, a first layer to be an EL layer is formed over the entire surface, and then a first sacrificial layer is formed on the first layer. Then, a first resist mask is formed on the first sacrificial layer, and the first layer and the first sacrificial layer are processed using the first resist mask to form the island-shaped EL layer. Similarly, a second layer to be an emission layer is formed using a second sacrificial layer and a second resist mask to form the island-shaped emission layer.

[0307] As described above, in the manufacturing method of a display device according to one embodiment of the present invention, the island-shaped EL layer is not formed by a metal mask pattern but by forming a layer to be the EL layer on the entire surface and then processing it. Similarly, the island-shaped light-receiving layer is not formed by a metal mask pattern but by forming a layer to be the light-receiving layer on the entire surface and then processing it. Therefore, it is possible to realize a high-resolution display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Furthermore, since the EL layer can be formed separately for each color, a display device with extremely vivid images, high contrast, and high display quality can be realized. Furthermore, a light-receiving device can be provided in each pixel, thereby realizing a display device having a high-resolution imaging function and a sensing function such as a touch sensor or near-touch sensor. Furthermore, by providing a sacrificial layer on the EL layer and the light-receiving layer, damage to the EL layer and the light-receiving layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-emitting device and the light-receiving device.

[0308] For example, it is difficult to achieve a spacing of less than 10 μm between adjacent light-emitting devices and light-receiving devices using a metal mask. However, the above method can narrow the spacing to 3 μm or less, 2 μm or less, or even 1 μm or less. Furthermore, by using an exposure device for LSIs, for example, the spacing can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less. This allows the area of ​​the light-emitting region (hereinafter also referred to as the light-emitting area) and the light-receiving area in the pixel to be increased, enabling the aperture ratio to approach 100%. For example, the aperture ratio can be 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, but less than 100%.

[0309] The patterns of the EL layer and the light-receiving layer themselves can also be made much smaller than when a metal mask is used. For example, when a metal mask is used to separately form the EL layer and the light-receiving layer, thickness variations occur between the center and edges of the pattern, resulting in a smaller effective area that can be used as the light-emitting region or the light-receiving region compared to the overall area of ​​the pattern. On the other hand, with the above-mentioned manufacturing method, the pattern is formed by processing a film deposited to a uniform thickness, so the thickness can be made uniform within the pattern, and even with a fine pattern, almost the entire area can be used as the light-emitting region or the light-receiving region. This makes it possible to manufacture a display device that combines high definition and a high aperture ratio.

[0310] <Display device configuration example 1> A display device according to one embodiment of the present invention is shown in FIGS. 53A and 53B.

[0311] 53A is a top view of the display device 100. The display device 100 has a display section in which a plurality of pixels 110 are arranged in a matrix, and a connection section 140 on the outside of the display section.

[0312] A stripe arrangement is applied to the pixel 110 shown in FIG. 53A. The pixel 110 shown in FIG. 53A is composed of four subpixels: subpixel 110a, subpixel 110b, subpixel 110c, and subpixel 110d. The subpixels 110a, 110b, and 110c each have a light-emitting device that emits light in a different wavelength region. The light-emitting devices can be the above-mentioned light-emitting devices. The subpixels 110a, 110b, and 110c can be subpixels of three colors: red (R), green (G), and blue (B), or subpixels of three colors: yellow (Y), cyan (C), and magenta (M). The subpixel 110d has a light-receiving device. The light-receiving device can be the above-mentioned light-receiving device.

[0313] 53A shows an example in which the sub-pixels are arranged side by side in the X direction, and sub-pixels of the same type are arranged side by side in the Y direction. Note that different types of sub-pixels may be arranged side by side in the Y direction, and sub-pixels of the same type may be arranged side by side in the X direction.

[0314] 53A shows an example in which the connection unit 140 is located below the display unit when viewed from above, but this is not particularly limited. The connection unit 140 only needs to be located in at least one of the upper, right, left, and lower sides of the display unit when viewed from above, and may be located so as to surround all four sides of the display unit. Furthermore, the connection unit 140 may be singular or plural.

[0315] A cross-sectional view taken along the dashed dotted line X1-X2 in FIG. 53A is shown in FIG. 53B.

[0316] 53B, display device 100 includes light-emitting device 130a, light-emitting device 130b, light-emitting device 130c, and light-receiving device 130d provided on layer 101 including transistors. Furthermore, protective layer 131 and protective layer 132 are provided to cover these light-emitting devices and light-receiving devices. Substrate 120 is bonded to protective layer 132 with resin layer 122. Furthermore, insulating layer 125 and insulating layer 127 on insulating layer 125 are provided in the regions between adjacent light-emitting devices and light-receiving devices.

[0317] The display device of one embodiment of the present invention may be any of a top-emission type that emits light in a direction opposite to a substrate on which a light-emitting device is formed, a bottom-emission type that emits light toward a substrate on which a light-emitting device is formed, and a dual-emission type that emits light from both sides.

[0318] The transistor-containing layer 101 may have a laminated structure in which, for example, a plurality of transistors are provided on a substrate and an insulating layer is provided to cover these transistors. The transistor-containing layer 101 may have a recess between adjacent light-emitting devices. For example, a recess may be provided in an insulating layer located on the outermost surface of the transistor-containing layer 101.

[0319] The light emitting devices 130a, 130b, and 130c each emit light in a different wavelength range, and preferably emit light of three colors, for example, red (R), green (G), and blue (B).

[0320] The light-emitting device 130a has a pixel electrode 111a on the layer 101 including the transistor, an EL layer island 113a on the pixel electrode 111a, a layer 114 on the EL layer island 113a, and a common electrode 115 on the layer 114.

[0321] The light-emitting device 130b has a pixel electrode 111b on the layer 101 including the transistor, an EL layer island 113b on the pixel electrode 111b, a layer 114 on the EL layer island 113b, and a common electrode 115 on the layer 114.

[0322] The light-emitting device 130c has a pixel electrode 111c on the layer 101 including the transistor, an EL layer island 113c on the pixel electrode 111c, a layer 114 on the EL layer island 113c, and a common electrode 115 on the layer 114.

[0323] The light receiving device 130d has a pixel electrode 111d on the layer 101 including the transistor, an island-shaped light receiving layer 113d on the pixel electrode 111d, a layer 114 on the island-shaped light receiving layer 113d, and a common electrode 115 on the layer 114.

[0324] The light-emitting devices and light-receiving devices of each color share the same film as a common electrode. The common electrode is electrically connected to a conductive layer provided in the connection portion 140. This allows the same potential to be supplied to the common electrodes of the light-emitting devices and light-receiving devices of each color.

[0325] The pair of electrodes (pixel electrode and common electrode) of the light-emitting device and the light-receiving device can be appropriately made of metals, alloys, electrically conductive compounds, and mixtures thereof, etc. Specific examples include indium tin oxide (In-Sn oxide, also referred to as ITO), In-Si-Sn oxide (also referred to as ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, alloys containing aluminum (aluminum alloys) such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), and an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Other examples of usable materials include aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing these metals in combination. Other examples include rare earth metals such as elements belonging to Groups 1 and 2 of the periodic table (e.g., lithium (Li), cesium (Cs), calcium (Ca), and strontium (Sr)), europium (Eu), and ytterbium (Yb), as well as alloys containing these metals in combination, graphene, and the like.

[0326] A light-emitting device preferably has a micro-optical resonator (microcavity) structure. Therefore, one of a pair of electrodes of the light-emitting device preferably has a transmissive and reflective electrode for visible light, and the other preferably has a reflective electrode for visible light. By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby intensifying the light emitted from the light-emitting device.

[0327] The semi-transmitting / semi-reflective electrode can have a laminated structure of an electrode that is reflective to visible light and an electrode that is transparent to visible light (also called a transparent electrode).

[0328] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode with a visible light transmittance of 40% or more for a light emitting element. The visible light reflectance of the semi-transmissive / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 -2 When the light emitting device emits infrared light, the transmittance or reflectance of these electrodes for infrared light preferably satisfies the above numerical range, similar to the transmittance or reflectance for visible light.

[0329] The EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d are each provided in an island shape. The EL layer 113a, the EL layer 113b, and the EL layer 113c each have an emission layer. It is preferable that the EL layer 113a, the EL layer 113b, and the EL layer 113c each have an emission layer that emits light in a different wavelength region. The light-receiving layer 113d has an active layer.

[0330] The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer can contain one or more light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a substance that emits infrared light can also be used as the light-emitting substance.

[0331] Examples of light-emitting materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0332] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0333] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0334] The light-emitting layer may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). One or more organic compounds may be a hole-transporting material or an electron-transporting material, or both. Alternatively, a bipolar material or a TADF material may be used as the one or more organic compounds.

[0335] The light-emitting layer preferably contains, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triplet Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, the energy transfer becomes smooth, allowing for efficient emission. This configuration simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting device.

[0336] As a combination of materials that form an exciplex, it is preferable that the HOMO level (highest occupied molecular orbital level) of the hole-transporting material is equal to or higher than the HOMO level of the electron-transporting material. It is also preferable that the LUMO level (lowest unoccupied molecular orbital level) of the hole-transporting material is equal to or higher than the LUMO level of the electron-transporting material. The LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV).

[0337] The formation of exciplexes can be confirmed, for example, by comparing the emission spectra of the hole-transporting material, the electron-transporting material, and the mixed film of these materials and observing the phenomenon that the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak at longer wavelengths). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of the hole-transporting material, the transient PL of the electron-transporting material, and the mixed film of these materials and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lived component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL can also be interpreted as transient electroluminescence (EL). In other words, the formation of exciplexes can also be confirmed by comparing the transient EL of the hole-transporting material, the transient EL of the electron-transporting material, and the mixed film of these materials and observing differences in transient response.

[0338] The EL layer 113a, the EL layer 113b, and the EL layer 113c may further include, as a layer other than the light-emitting layer, a layer containing a substance with a high hole-injection property, a substance with a high hole-transport property (also referred to as a hole-transport material), a hole-blocking material, a substance with a high electron-transport property (also referred to as an electron-transport material), a substance with a high electron-injection property, an electron-blocking material, a bipolar substance (a substance with high electron-transport property and high hole-transport property, also referred to as a bipolar material), or the like.

[0339] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0340] For example, the EL layer 113a, the EL layer 113b, and the EL layer 113c may each include one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0341] The EL layer may include one or more layers common to all colors, such as a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, a carrier injection layer (hole injection layer or electron injection layer) may be formed as layer 114. All layers of the EL layer may be formed separately for each color. In other words, the EL layer does not need to include a layer common to all colors.

[0342] Each of the EL layers 113a, 113b, and 113c preferably includes a light-emitting layer and a carrier transport layer on the light-emitting layer. This prevents the light-emitting layer from being exposed to the outermost surface during the manufacturing process of the display device 100, reducing damage to the light-emitting layer. This improves the reliability of the light-emitting device.

[0343] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a substance with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0344] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer that contains a hole transporting material. Examples of the hole transporting material include 10 -6 cm 2 A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a substance having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0345] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a molecular weight of 1×10 -6 cm 2A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0346] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a substance with high electron injection properties. Examples of the substance with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the substance with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0347] The electron injection layer may be formed of, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x , where X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO x The electron injection layer may be formed of an alkali metal, an alkaline earth metal, such as cesium carbonate, or a compound thereof. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used in the first layer and ytterbium is provided in the second layer.

[0348] Alternatively, an electron transporting material may be used for the electron injection layer. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring may be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring may be used.

[0349] The organic compound having an unshared electron pair preferably has a lowest unoccupied molecular orbital (LUMO) of -3.6 eV to -2.3 eV. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0350] Examples of organic compounds with lone electron pairs include 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino<2,3-a:2',3'-c>phenazine (abbreviated as HATNA), and 2,4,6-tris<3'-(pyridin-3-yl)biphenyl-3-yl>-1,3,5-triazine (abbreviated as TmPPPyTz). NBPhen has a higher glass transition temperature (Tg) and better heat resistance than BPhen.

[0351] When fabricating a tandem-structure light-emitting device, an intermediate layer is placed between the two light-emitting units. The intermediate layer has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between a pair of electrodes.

[0352] For example, a material applicable to an electron injection layer, such as lithium, can be suitably used for the intermediate layer. For example, a material applicable to a hole injection layer can be suitably used for the intermediate layer. For example, a layer containing a hole transport material and an acceptor material (electron acceptor material) can be used for the intermediate layer. For example, a layer containing an electron transport material and a donor material can be used for the intermediate layer. By forming an intermediate layer having such a layer, an increase in driving voltage can be suppressed when light-emitting units are stacked.

[0353] The active layer includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors including organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer is shown. By using an organic semiconductor, the light-emitting layer and the active layer can be formed by the same method (for example, vacuum deposition), which is preferable because the manufacturing equipment can be shared.

[0354] The active layer is made of n-type semiconductor material, such as fullerene (e.g., C 60 , C 70 Examples of electron-accepting organic semiconductor materials include fullerene derivatives and other fullerenes. Fullerenes have a soccer ball-like shape, which is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when the π-electron conjugation (resonance) spreads across a plane, as in benzene, the electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as light-receiving elements. C 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C 60It is preferable because it has a larger π-electron conjugated system and a broad absorption band in the long wavelength region compared to [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviation: PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviation: ICBA).

[0355] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0356] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0357] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Further examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0358] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0359] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0360] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0361] The light-emitting element and the light-receiving element can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting element and the light-receiving element can be formed by a method such as vapor deposition (including vacuum vapor deposition), a transfer method, a printing method, an inkjet method, or a coating method.

[0362] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole-transporting materials, and inorganic compounds such as zinc oxide (ZnO) can be used as electron-transporting materials.

[0363] The active layer can be made of a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (PBDB-T) or a PBDB-T derivative, which functions as a donor. For example, an acceptor material can be dispersed in PBDB-T or a PBDB-T derivative.

[0364] The active layer may contain a mixture of three or more materials. For example, in order to expand the wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0365] The side surfaces of the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111c, the pixel electrode 111d, the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d are covered with the insulating layer 125 and the insulating layer 127. This prevents the layer 114 (or the common electrode 115) from coming into contact with any of the side surfaces of the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111c, the pixel electrode 111d, the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d, thereby preventing short-circuiting between the light-emitting device and the light-receiving device.

[0366] The insulating layer 125 preferably covers the side surfaces of at least the pixel electrodes 111a, 111b, 111c, and 111d. Furthermore, the insulating layer 125 preferably covers the side surfaces of the EL layers 113a, 113b, 113c, and the light-receiving layer 113d. The insulating layer 125 may be configured to be in contact with the side surfaces of each of the pixel electrodes 111a, 111b, 111c, 111d, EL layers 113a, 113b, 113c, and the light-receiving layer 113d.

[0367] The insulating layer 127 is provided on the insulating layer 125 so as to fill recesses formed in the insulating layer 125. The insulating layer 127 can be configured to overlap with the side surfaces of the pixel electrodes 111a, 111b, 111c, 111d, the EL layers 113a, 113b, 113c, and the light-receiving layer 113d, with the insulating layer 125 interposed therebetween.

[0368] Note that either the insulating layer 125 or the insulating layer 127 does not necessarily have to be provided. For example, when the insulating layer 125 is not provided, the insulating layer 127 can be configured to be in contact with the side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d. The insulating layer 127 can be provided on the layer 101 so as to fill the gap between the EL layer of the light-emitting device and the light-receiving layer of the light-receiving device.

[0369] The layer 114 and the common electrode 115 are provided on the EL layer 113a, the EL layer 113b, the EL layer 113c, the light-receiving layer 113d, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, a step exists between a region where the pixel electrode is provided and a region where the pixel electrode is not provided (a region between the light-emitting device and the light-receiving device). In the display device of one embodiment of the present invention, the insulating layer 125 and the insulating layer 127 can flatten the step, thereby improving the coverage of the layer 114 and the common electrode 115. Therefore, poor connection due to a step in the common electrode 115 can be suppressed. Alternatively, an increase in electrical resistance caused by a local thinning of the common electrode 115 due to the step can be suppressed.

[0370] In order to improve the flatness of the surfaces on which the layer 114 and the common electrode 115 are formed, it is preferable that the height of the upper surface of the insulating layer 125 and the upper surface of the insulating layer 127 be the same as or approximately the same as the height of the upper surface of at least one of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d. The upper surface of the insulating layer 127 preferably has a flat shape, and may have protrusions or recesses.

[0371] The insulating layer 125 has regions in contact with the side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d, and functions as a protective insulating layer for the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d. Providing the insulating layer 125 can prevent impurities (oxygen, moisture, etc.) from entering the interior from the side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d, thereby providing a highly reliable display device.

[0372] If the width (thickness) of the insulating layer 125 in the region in contact with the side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d is large in cross section, the distance between the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d will increase, which may result in a low aperture ratio. Also, if the width (thickness) of the insulating layer 125 is small, the effect of suppressing impurities from entering the interior from the side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d may be reduced.

[0373] The width (thickness) of insulating layer 125 in the region in contact with the side surfaces of EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d is preferably 3 nm to 200 nm, more preferably 3 nm to 150 nm, even more preferably 5 nm to 150 nm, even more preferably 5 nm to 100 nm, even more preferably 10 nm to 100 nm, and even more preferably 10 nm to 50 nm. By setting the width (thickness) of insulating layer 125 within the above range, a display device having a high aperture ratio and high reliability can be obtained.

[0374] The insulating layer 125 can include an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure.

[0375] The insulating layer 125 can be formed by sputtering, chemical vapor deposition (CVD), pulsed laser deposition (PLD), atomic layer deposition (ALD), or the like. The insulating layer 125 is preferably formed by the ALD method, which has good coating properties. The ALD method is preferably used because it causes little film formation damage to the surface on which it is formed.

[0376] Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. Examples of nitride oxide insulating films include silicon nitride oxide films and aluminum nitride oxide films. Aluminum oxide is particularly preferred because it has a high etching selectivity with respect to the EL layer and protects the EL layer during the formation of the insulating layer 127, which will be described later. In particular, by using an inorganic insulating film such as an aluminum oxide film, hafnium oxide film, or silicon oxide film formed by an ALD method as the insulating layer 125, it is possible to form an insulating layer 125 with few pinholes and excellent protection of the EL layer.

[0377] In this specification and elsewhere, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0378] The insulating layer 127 provided on the insulating layer 125 has the function of flattening recesses formed in the insulating layer 125 between adjacent light-emitting devices. In other words, the insulating layer 127 improves the flatness of the surface on which the common electrode 115 is formed. An insulating layer containing an organic material can be suitably used as the insulating layer 127. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the insulating layer 127. Alternatively, a photosensitive resin can be used as the photosensitive resin. A photoresist can be used as the photosensitive resin. A positive-type material or a negative-type material can be used as the photosensitive resin.

[0379] The difference in height between the upper surface of the insulating layer 127 and the upper surface of any one of the EL layers 113a, 113b, 113c, and the light-receiving layer 113d is, for example, preferably 0.5 times or less, more preferably 0.3 times or less, the thickness of the insulating layer 127. Alternatively, for example, the insulating layer 127 may be provided so that the upper surface of any one of the EL layers 113a, 113b, 113c, and the light-receiving layer 113d is higher than the upper surface of the insulating layer 127. Alternatively, for example, the insulating layer 127 may be provided so that the upper surface of the insulating layer 127 is higher than the upper surfaces of the light-emitting layers of the EL layers 113a, 113b, and 113c, and higher than the upper surface of the active layer of the light-receiving layer 113d.

[0380] It is preferable to provide protective layers 131 and 132 on the light-emitting devices 130a, 130b, 130c, and 130d, respectively. By providing the protective layers 131 and 132, the reliability of the light-emitting devices and the light-receiving devices can be improved.

[0381] There is no limitation on the conductivity of the protective layer 131 and the protective layer 132. The protective layer 131 and the protective layer 132 can be formed using at least one of an insulating film, a semiconductor film, and a conductive film.

[0382] The protective layer 131 and the protective layer 132 have an inorganic film, which prevents oxidation of the common electrode 115 and suppresses impurities (moisture, oxygen, etc.) from entering the light-emitting device 130a, the light-emitting device 130b, the light-emitting device 130c, and the light-receiving device 130d, thereby suppressing deterioration of the light-emitting devices and the light-receiving devices and improving the reliability of the display device.

[0383] The protective layer 131 and the protective layer 132 can be formed using, for example, an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film. Examples of the insulating oxide film include a silicon oxide film, an aluminum oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of the nitride insulating film include a silicon nitride film and an aluminum nitride film. Examples of the oxynitride insulating film include a silicon oxynitride film and an aluminum oxynitride film. Examples of the nitride oxide insulating film include a silicon nitride oxide film and an aluminum nitride oxide film.

[0384] Each of the protective layers 131 and 132 preferably includes an insulating nitride film or an insulating nitride oxide film, and more preferably includes an insulating nitride film.

[0385] The protective layer 131 and the protective layer 132 may be formed using an inorganic film containing In-Sn oxide (also referred to as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO). The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

[0386] When light is emitted from the light-emitting device and incident on the light-receiving device via the protective layers 131 and 132, it is preferable that the protective layers 131 and 132 have high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0387] For example, a stacked structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film on the aluminum oxide film, can be used for the protective layer 131 and the protective layer 132. By using such a stacked structure, impurities (water, oxygen, etc.) can be prevented from entering the EL layer side.

[0388] Furthermore, the protective layer 131 and the protective layer 132 may include an organic film. For example, the protective layer 132 may include both an organic film and an inorganic film.

[0389] Different film formation methods may be used for the protective layer 131 and the protective layer 132. Specifically, the protective layer 131 may be formed by the ALD method, and the protective layer 132 may be formed by the sputtering method.

[0390] The upper end portions of the pixel electrodes 111a, 111b, 111c, and 111d are not covered with an insulating layer. This allows the distance between adjacent light-emitting devices and light-receiving devices to be extremely narrow. This allows for a high-definition or high-resolution display device.

[0391] In this specification, etc., a device fabricated using a metal mask or FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.

[0392] In this specification and the like, a structure in which different light-emitting layers are fabricated or painted separately for each color light-emitting device (here, blue (B), green (G), and red (R)) is sometimes referred to as an SBS (Side By Side) structure. The SBS structure allows the materials and configuration to be optimized for each light-emitting device, increasing the freedom of material and configuration selection and making it easier to improve brightness and reliability.

[0393] In this specification and the like, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. Note that a white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0394] Here, light-emitting devices can be broadly divided into single-structure and tandem-structure devices. A single-structure device has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, two or more light-emitting layers may be selected so that the light emitted from each of the two or more light-emitting layers has a complementary color relationship. For example, by making the light emitted from the first light-emitting layer and the light emitted from the second light-emitting layer complementary to each other, a configuration in which the light-emitting device as a whole emits white light can be obtained. Furthermore, in the case of a light-emitting device having three or more light-emitting layers, the light-emitting colors of the respective light-emitting layers can be mixed to emit white light.

[0395] A tandem-structured device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light, light from the light-emitting layers of the multiple light-emitting units may be combined to obtain white light. The configuration for obtaining white light is the same as that of the single-structured device. In a tandem-structured device, it is preferable to provide an intermediate layer such as a charge-generating layer between the multiple light-emitting units.

[0396] When comparing the above-mentioned white light-emitting devices (single structure or tandem structure) with light-emitting devices with SBS structure, the light-emitting devices with SBS structure can reduce power consumption compared to white light-emitting devices. If you want to keep power consumption low, it is preferable to use a light-emitting device with SBS structure. On the other hand, the manufacturing process of white light-emitting devices is simpler than that of light-emitting devices with SBS structure, so they are preferable because they can reduce manufacturing costs or increase manufacturing yields.

[0397] The display device of this embodiment can reduce the distance between light-emitting devices. Specifically, the distance between light-emitting devices, the distance between EL layers, or the distance between pixel electrodes can be less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the distance between the side surface of EL layer 113a and the side surface of EL layer 113b or the distance between the side surface of EL layer 113b and the side surface of EL layer 113c has a region of 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0398] Similarly, the display device of this embodiment can narrow the distance between light-receiving devices. Specifically, the distance between light-receiving devices, the distance between light-receiving layers, or the distance between pixel electrodes can be less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, there is a region where the distance between the side surface of one light-receiving layer and the side surface of an adjacent light-receiving layer is 1 μm or less, preferably 0.5 μm (500 nm) or less, and more preferably 100 nm or less.

[0399] The display device of this embodiment can reduce the distance between the light-emitting device and the light-receiving device. Specifically, the distance between the light-emitting device and the light-receiving device, the distance between the EL layer and the light-receiving layer, or the distance between the pixel electrodes can be less than 20 μm, 10 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the distance between the side surface of EL layer 113a and the side surface of light-receiving layer 113d, the distance between the side surface of EL layer 113b and the side surface of light-receiving layer 113d, or the distance between the side surface of EL layer 113c and the side surface of light-receiving layer 113d has a region of 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0400] A light-shielding layer may be provided on the surface of substrate 120 facing resin layer 122. Various optical members may be disposed on the outside of substrate 120. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. The outside of substrate 120 may also be provided with an anti-static film that prevents dust from adhering, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that prevents scratches from occurring during use, an impact absorbing layer, etc.

[0401] The substrate 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting device is extracted. Using a flexible material for the substrate 120 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as the substrate 120.

[0402] The substrate 120 may be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. The substrate 120 may be made of glass having a thickness sufficient to provide flexibility.

[0403] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0404] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0405] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0406] When a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0407] The resin layer 122 can be made of various curable adhesives, such as a photo-curable adhesive (e.g., an ultraviolet curable adhesive), a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets, etc., may also be used.

[0408] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0409] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials can also be used for conductive layers such as various wirings and electrodes constituting a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) in light-emitting devices.

[0410] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0411] Note that a display device according to one embodiment of the present invention can have a structure including an OS transistor and a light-emitting element with an MML (metal maskless) structure. This structure can significantly reduce leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting elements (also referred to as lateral leakage current or side leakage current). Furthermore, with this structure, when an image is displayed on the display device, a viewer can observe one or more of image clarity, image sharpness, and a high contrast ratio. Note that a structure in which leakage current that may flow through the transistor and lateral leakage current between light-emitting elements are extremely low can provide a display with extremely low light leakage during black display (also referred to as true black display).

[0412] <Pixel layout> The pixel layout will now be described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of sub-pixel arrangements include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0413] Examples of the top surface shape of the subpixel include a polygon such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. Here, the top surface shape of the subpixel corresponds to the top surface shape of the light-emitting region of a light-emitting device or the light-receiving region of a light-receiving device.

[0414] The pixels 110 shown in FIGS. 54A to 54C are arranged in a stripe pattern.

[0415] The display portion of a display device according to one embodiment of the present invention includes a plurality of pixels arranged in a matrix in the row and column directions. The display portion employing the pixel layouts shown in Figures 54A to 54C includes a first array in which subpixels 110a, 110b, 110c, and 110d are repeatedly arranged in this order in the row direction. Furthermore, the first array is repeatedly arranged in the column direction.

[0416] The display unit has a second array in which subpixels 110a are repeatedly arranged in the column direction, a third array in which subpixels 110b are repeatedly arranged in the column direction, a fourth array in which subpixels 110c are repeatedly arranged in the column direction, and a fifth array in which subpixels 110d are repeatedly arranged in the column direction. Furthermore, the second array, third array, fourth array, and fifth array are repeatedly arranged in this order in the row direction.

[0417] In the present embodiment and the like, the horizontal direction of the drawings is defined as the row direction and the vertical direction as the column direction in order to clearly explain the pixel layout. However, this is not limited to this, and the row direction and the column direction can be interchanged. Therefore, in this specification and the like, one of the row direction and the column direction may be referred to as the first direction, and the other of the row direction and the column direction may be referred to as the second direction. The second direction is perpendicular to the first direction. Note that, when the top surface shape of the display unit is rectangular, the first direction and the second direction do not have to be parallel to the straight line portions of the outline of the display unit. Furthermore, the top surface shape of the display unit is not limited to a rectangle and may be a polygon or a curved shape (e.g., a circle, an ellipse), and the first direction and the second direction may be any direction relative to the display unit.

[0418] In the present embodiment and the like, in order to explain the pixel layout in an easy-to-understand manner, the order of the sub-pixels is shown from the left of the drawing, but this is not limited to this and can be changed to the order from the right. Similarly, the order of the sub-pixels is shown from the top of the drawing, but this is not limited to this and can be changed to the order from the bottom.

[0419] In this specification and the like, "repeatedly arranged" means that the minimum unit of the order of sub-pixels is arranged two or more times.

[0420] FIG. 54A shows an example in which each subpixel has a rectangular top surface shape, FIG. 54B shows an example in which each subpixel has a top surface shape that combines two semicircles and a rectangle, and FIG. 54C shows an example in which each subpixel has an elliptical top surface shape.

[0421] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, it is likely to have rounded corners. As a result, the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, a circle, or the like.

[0422] Furthermore, in a manufacturing method of a display device according to one embodiment of the present invention, the EL layer or the light-receiving layer is processed into an island shape using a resist mask. The resist film formed on the EL layer or the light-receiving layer needs to be cured at a temperature lower than the heat-resistant temperature of the EL layer or the light-receiving layer. Therefore, depending on the heat-resistant temperature of the material for the EL layer, the heat-resistant temperature of the material for the light-receiving layer, and the curing temperature of the resist material, the resist film may not be cured sufficiently. A resist film that is not cured sufficiently may have a shape different from the desired shape during processing. As a result, the top surface shape of the EL layer or the light-receiving layer may become a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the EL layer or the light-receiving layer.

[0423] In order to form the desired top surface shapes of the EL layer and the absorption layer, a technique for correcting the mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern matches the transfer pattern. Specifically, OPC technique adds correction patterns to the corners of the figures on the mask pattern.

[0424] The pixels 110 shown in FIGS. 54D to 54F are arranged in a matrix.

[0425] 54D to 54F, the display portion of the display device employs a first array in which subpixels 110a and 110b are alternately arranged in the row direction, and a second array in which subpixels 110c and 110d are alternately arranged in the row direction. Furthermore, the first array and the second array are alternately arranged in this order in the column direction.

[0426] The display unit has a third array in which subpixels 110a and 110c are alternately arranged in the column direction, and a fourth array in which subpixels 110b and 110d are alternately arranged in the column direction. Furthermore, the third array and the fourth array are alternately arranged in the row direction.

[0427] Figure 54D is an example in which each subpixel has a square top surface shape, Figure 54E is an example in which each subpixel has an approximately square top surface shape with rounded corners, and Figure 54F is an example in which each subpixel has a circular top surface shape.

[0428] 54G shows an example in which one pixel 110 is configured with two rows and three columns. The pixel 110 has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and one subpixel (subpixel 110d) in the bottom row (second row). In other words, the pixel 110 has subpixel 110a in the left column (first column), subpixel 110b in the center column (second column), subpixel 110c in the right column (third column), and further has subpixels 110d across these three columns.

[0429] As shown in Figure 54G, the subpixels may have different sizes. Figure 54G shows a configuration in which subpixel 110d is larger than subpixels 110a to 110c. Figure 54H shows a configuration in which subpixels 110b and 110c are larger than subpixel 110a, and subpixel 110a is larger than subpixel 110d. The pixel 110 shown in Figure 54H has two subpixels (subpixels 110a and 110d) in the left column (first column), subpixel 110b in the center column (second column), and subpixel 110c in the right column (third column).

[0430] 54G has a first array in which subpixels 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array in which subpixels 110d are repeatedly arranged in the row direction. Furthermore, the first array and the second array are repeatedly arranged alternately in the column direction.

[0431] The display unit has a third array in which subpixels 110a and 110d are alternately arranged in the column direction, a fourth array in which subpixels 110b and 110d are alternately arranged in the column direction, and a fifth array in which subpixels 110c and 110d are alternately arranged in the column direction. Furthermore, the third array, fourth array, and fifth array are alternately arranged in this order in the row direction.

[0432] 54H, the display section of the display device employs a first array in which subpixels 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array in which subpixels 110d, 110b, and 110c are repeatedly arranged in this order in the row direction. Furthermore, the first array and the second array are repeatedly arranged alternately in the column direction.

[0433] The display unit has a third array in which subpixels 110a and 110d are alternately arranged in the column direction, a fourth array in which subpixels 110b are repeatedly arranged in the column direction, and a fifth array in which subpixels 110c are repeatedly arranged in the column direction. Furthermore, the third array, fourth array, and fifth array are repeatedly arranged in this order in the row direction.

[0434] FIG. 54I shows an example in which one pixel 110 is arranged in two rows and three columns. The pixel 110 has subpixels 110a, 110b, 110c, and three subpixels 110d. The pixel 110 has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and three subpixels (three subpixels 110d) in the bottom row (second row). In other words, the pixel 110 has two subpixels (subpixels 110a and 110d) in the left column (first column), two subpixels (subpixels 110b and 110d) in the center column (second column), and two subpixels (subpixels 110c and 110d) in the right column (third column).

[0435] 54I is applied to the display section of a display device that has a first array in which subpixels 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array in which subpixels 110d are repeatedly arranged in the row direction. Furthermore, the first array and the second array are repeatedly arranged alternately in the column direction.

[0436] The display unit has a third array in which subpixels 110a and 110d are alternately arranged in the column direction, a fourth array in which subpixels 110b and 110d are alternately arranged in the column direction, and a fifth array in which subpixels 110c and 110d are alternately arranged in the column direction. Furthermore, the third array, fourth array, and fifth array are alternately arranged in this order in the row direction.

[0437] 54A to 54I is composed of four subpixels: 110a, 110b, 110c, and 110d. The subpixels 110a, 110b, 110c, and 110d each have a light-emitting device or a light-receiving device that emits light in a different wavelength region. For example, as shown in FIGS. 55A to 55E, the subpixel 110a can be a subpixel (R) that emits red light, the subpixel 110b can be a subpixel (G) that emits green light, the subpixel 110c can be a subpixel (B) that emits blue light, and the subpixel 110d can be a subpixel (PS) that receives light.

[0438] 55A has a first array in which subpixels (R), (G), (B), and (PS) are repeatedly arranged in this order in the row direction. Furthermore, the first array is repeatedly arranged in the column direction.

[0439] The display unit has a second array in which sub-pixels (R) are repeatedly arranged in the column direction, a third array in which sub-pixels (G) are repeatedly arranged in the column direction, a fourth array in which sub-pixels (B) are repeatedly arranged in the column direction, and a fifth array in which sub-pixels (PS) are repeatedly arranged in the column direction. Furthermore, the second array, third array, fourth array, and fifth array are repeatedly arranged in this order in the row direction.

[0440] The display section of a display device employing the pixel layout shown in Figure 55B has a first array in which sub-pixels (R) and sub-pixels (G) are alternately arranged in the row direction, and a second array in which sub-pixels (B) and sub-pixels (PS) are alternately arranged in the row direction. Furthermore, the first array and the second array are alternately arranged in this order in the column direction.

[0441] The display unit has a third array in which sub-pixels (R) and sub-pixels (B) are alternately arranged in the column direction, and a fourth array in which sub-pixels (G) and sub-pixels (PS) are alternately arranged in the column direction, and the third array and the fourth array are alternately arranged in the row direction.

[0442] The display section of a display device employing the pixel layout shown in Fig. 55C has a first array in which subpixels (R), (G), and (B) are repeatedly arranged in this order in the row direction, and a second array in which subpixels (PS) are repeatedly arranged in the row direction. Furthermore, the first array and the second array are alternately arranged in the column direction.

[0443] The display unit has a third array in which subpixels (R) and subpixels (PS) are alternately arranged in the column direction, a fourth array in which subpixels (G) and subpixels (PS) are alternately arranged in the column direction, and a fifth array in which subpixels (B) and subpixels (PS) are alternately arranged in the column direction. Furthermore, the third array, fourth array, and fifth array are alternately arranged in this order in the row direction.

[0444] The display section of a display device employing the pixel layout shown in Fig. 55D has a first array in which subpixels (R), (G), and (B) are repeatedly arranged in this order in the row direction, and a second array in which subpixels (PS), (G), and (B) are repeatedly arranged in this order in the row direction. Furthermore, the first array and the second array are repeatedly arranged alternately in the column direction.

[0445] The display unit has a third array in which sub-pixels (R) and sub-pixels (PS) are alternately arranged in the column direction, a fourth array in which sub-pixels (G) are repeatedly arranged in the column direction, and a fifth array in which sub-pixels (B) are repeatedly arranged in the column direction. Furthermore, the third array, fourth array, and fifth array are repeatedly arranged in this order in the row direction.

[0446] The display section of a display device employing the pixel layout shown in Fig. 55E has a first array in which subpixels (R), (G), and (B) are repeatedly arranged in this order in the row direction, and a second array in which subpixels (PS) are repeatedly arranged in the row direction. Furthermore, the first array and the second array are alternately arranged in the column direction.

[0447] The display unit has a third array in which subpixels (R) and subpixels (PS) are alternately arranged in the column direction, a fourth array in which subpixels (G) and subpixels (PS) are alternately arranged in the column direction, and a fifth array in which subpixels (B) and subpixels (PS) are alternately arranged in the column direction. Furthermore, the third array, fourth array, and fifth array are alternately arranged in this order in the row direction.

[0448] The light-emitting areas of the subpixels (R), (G), and (B) having light-emitting devices may be the same or different. For example, the light-emitting areas of the subpixels having light-emitting devices can be determined depending on the lifetime of the light-emitting devices. It is preferable to make the light-emitting area of ​​the subpixel having a light-emitting device with a short lifetime larger than the light-emitting areas of the other subpixels.

[0449] FIG. 55D shows an example in which the light-emitting areas of the subpixels (G) and (B) are larger than that of the subpixel (R). This configuration is suitable for use when the lifespan of the light-emitting device that emits green light and the light-emitting device that emits blue light is shorter than that of the light-emitting device that emits red light. In the subpixels (G) and (B) with larger light-emitting areas, the current density applied to the light-emitting device that emits green light and the light-emitting device that emits blue light of each subpixel is lower, thereby extending the lifespan of the light-emitting devices. In other words, a highly reliable display device can be obtained.

[0450] Examples of pixel layouts that differ from those shown in FIGS. 54A to 54I and 55A to 55E are shown in FIGS. 56A and 56B.

[0451] FIG. 56A shows four pixels, with adjacent pixels 110A and 110B having different subpixels. Pixel 110A has three subpixels: subpixel 110a, subpixel 110b, and subpixel 110d. Pixel 110B, adjacent to pixel 110A, has subpixels 110b, 110c, and 110d. That is, pixels 110A including subpixel 110a and pixels 110B not including subpixel 110a are alternately arranged in the column and row directions. Similarly, pixels 110A not including subpixel 110c and pixels 110B including subpixel 110c are alternately arranged in the column and row directions.

[0452] Pixel 110A is configured with two rows and two columns, and has two subpixels (subpixels 110b and 110d) in the left column (first column) and one subpixel (subpixel 110a) in the right column (second column). In other words, pixel 110A has two subpixels (subpixels 110a and 110b) in the top row (first row) and two subpixels (subpixels 110a and 110d) in the bottom row (second row), with subpixels 110a spanning these two rows.

[0453] Pixel 110B is configured with two rows and two columns, and has two subpixels (subpixels 110b and 110d) in the left column (first column) and one subpixel (subpixel 110c) in the right column (second column). In other words, pixel 110A has two subpixels (subpixels 110b and 110c) in the top row (first row) and two subpixels (subpixels 110c and 110d) in the bottom row (second row), with subpixel 110c spanning these two rows.

[0454] The pixel shown in FIG. 56A has two pixels, pixel 110A and pixel 110B, each with four subpixels: subpixel 110a, subpixel 110b, subpixel 110c, and subpixel 110d. The two pixels, pixel 110A and pixel 110B, each have one subpixel 110a, two subpixels 110b, one subpixel 110c, and two subpixels 110d. This configuration allows the area of ​​the subpixels to be increased while maintaining a pseudo-high resolution, thereby reducing the required processing accuracy. In other words, compared with the same processing accuracy, it is possible to manufacture a display device with higher resolution. Furthermore, the number of transistors per area can be reduced, thereby improving productivity. Therefore, a pseudo-high-resolution display device can be manufactured with high productivity.

[0455] 56A has a first array ARR1 in which subpixels 110b, 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array ARR2 in which subpixels 110d, 110a, 110d, and 110c are repeatedly arranged in this order in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are repeatedly arranged alternately in the column direction.

[0456] The display unit has a third array ARR3 in which the subpixels 110b and 110d are alternately arranged in the column direction, and a fourth array ARR4 in which the subpixels 110a and 110c are alternately arranged in the column direction. Furthermore, the third array ARR3 and the fourth array ARR4 are alternately arranged in the row direction.

[0457] In pixel 110A, it is preferable that subpixel 110a has a larger area than both subpixels 110b and 110d, and in pixel 110B, subpixel 110c has a larger area than both subpixels 110b and 110d. Furthermore, it is preferable that the subpixel with the largest area in pixel 110A (subpixel 110a in this case) is different from the subpixel with the largest area in pixel 110B (subpixel 110c in this case).

[0458] In this specification and the like, the light-emitting area of ​​a sub-pixel having a light-emitting device may be referred to as the area of ​​the sub-pixel. Similarly, the light-receiving area of ​​a sub-pixel having a light-receiving device may be referred to as the area of ​​the sub-pixel.

[0459] In Figure 56A, the subpixels 110a and 110c are shown with the same area, and the subpixels 110b and 110d are shown with the same area, but this aspect of the present invention is not limited to this. The areas of the subpixels 110a and 110c may be different. The areas of the subpixels 110b and 110d may also be different. Figure 56B shows an example in which the area of ​​the subpixel 110b is larger than the area of ​​the subpixel 110d. Note that the areas of the subpixels 110b and 110d may be different between the pixel 110A and the pixel 110B.

[0460] Preferably, the subpixels 110a, 110b, and 110c each have a light-emitting device that emits light in a different wavelength region, and the subpixel 110d has a light-receiving device. For example, as shown in Figures 57A and 57B, the subpixel 110a can be a subpixel (R) that has a function of emitting red light, the subpixel 110b can be a subpixel (G) that has a function of emitting green light, the subpixel 110c can be a subpixel (B) that has a function of emitting blue light, and the subpixel 110d can be a subpixel (PS) that has a light-receiving function.

[0461] Of the three color light-emitting devices, red (R), green (G), and blue (B), one pixel can be composed of two color light-emitting devices. A light-receiving device can be provided in any pixel. Figures 57A and 57B show a configuration in which pixel 110A has a sub-pixel (R) that has the function of emitting red light, a sub-pixel (G) that has the function of emitting green light, and a sub-pixel (PS) that has a light-receiving function, and pixel 110B has a sub-pixel (B) that has the function of emitting blue light, a sub-pixel (G) that has the function of emitting green light, and a sub-pixel (PS) that has a light-receiving function.

[0462] 57A and 57B, the display section of the display device employs a first array ARR1 in which subpixels (G), (R), (G), and (B) are repeatedly arranged in this order in the row direction, and a second array ARR2 in which subpixels (PS), (R), (PS), and (B) are repeatedly arranged in this order in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are repeatedly arranged alternately in the column direction.

[0463] The display unit has a third array ARR3 in which sub-pixels (G) and sub-pixels (PS) are alternately arranged in the column direction, and a fourth array ARR4 in which sub-pixels (R) and sub-pixels (B) are alternately arranged in the column direction. Furthermore, the third array ARR3 and the fourth array ARR4 are alternately arranged in the row direction.

[0464] 57A and 57B show an example in which both pixel 110A and pixel 110B are provided with sub-pixels (PS) having light-receiving devices, but this is not a limitation of one embodiment of the present invention. If high accuracy is not required for the light-receiving function, pixels that do not include sub-pixels (PS) may be provided. In other words, a configuration may be used in which pixels that include sub-pixels (PS) and pixels that do not include sub-pixels (PS) are provided.

[0465] 57A and 57B, the area of ​​the sub-pixel (G) having the function of emitting green light is preferably smaller than the area of ​​the sub-pixel (R) having the function of emitting red light and the area of ​​the sub-pixel (B) having the function of emitting blue light. Because human luminosity is higher for green than for red and blue, making the area of ​​the sub-pixel (G) smaller than the areas of the sub-pixels (R) and (B) can result in a display device that has an excellent balance of red (R), green (G), and blue (B) and high visibility.

[0466] 57A and 57B show a configuration in which the area of ​​the subpixel (G) is smaller than the areas of the subpixels (R) and (B), but this aspect of the present invention is not limited to this. For example, the area of ​​the subpixel (R) may be smaller than the areas of the subpixels (G) and (B). As mentioned above, the area of ​​the subpixels having light-emitting devices may be determined depending on the lifespan of the light-emitting devices of each color.

[0467] A variation of FIG. 56A is shown in FIGS. 58A and 58B.

[0468] 58A has a first array ARR1 in which subpixels 110b, 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array ARR2 in which subpixels 110d, 110a, 110d, and 110c are repeatedly arranged in this order in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are repeatedly arranged alternately in the column direction.

[0469] The display unit has a third array ARR3 in which the subpixels 110b, 110d, and 110a are repeatedly arranged in this order in the column direction, and a fourth array ARR4 in which the subpixels 110b, 110d, and 110c are repeatedly arranged in this order in the column direction.Furthermore, the third array ARR3, the third array ARR3, the fourth array ARR4, and the fourth array ARR4 are repeatedly arranged in this order in the row direction.

[0470] 58B , the display section of the display device employing the pixel layout shown in FIG. 58B includes a first array ARR1 in which subpixels 110b, 110a, 110d, and 110a are repeatedly arranged in this order in the row direction, a second array ARR2 in which subpixels 110d, 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, a third array ARR3 in which subpixels 110b, 110c, 110d, and 110c are repeatedly arranged in this order in the row direction, and a fourth array ARR4 in which subpixels 110d, 110c, 110b, and 110a are repeatedly arranged in this order in the row direction. Furthermore, the first array ARR1, second array ARR2, third array ARR3, and fourth array ARR4 are repeatedly arranged in this order in the column direction.

[0471] The display unit has a fifth array ARR5 in which the sub-pixels 110b and 110d are alternately arranged in the column direction, and a sixth array ARR6 in which the sub-pixels 110a and 110c are alternately arranged in the column direction. Furthermore, the fifth array ARR5 and the sixth array ARR6 are alternately arranged in the row direction.

[0472] Figures 59A and 59B show an example configuration in which subpixel 110a shown in Figures 58A and 58B is a subpixel (R) having the function of emitting red light, subpixel 110b is a subpixel (G) having the function of emitting green light, subpixel 110c is a subpixel (B) having the function of emitting blue light, and subpixel 110d is a subpixel (PS) having a light-receiving function.

[0473] 59A is applied to a display unit having a first array ARR1 in which subpixels (G), (R), (G), and (B) are repeatedly arranged in this order in the row direction, and a second array ARR2 in which subpixels (PS), (R), (PS), and (B) are repeatedly arranged in this order in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are repeatedly arranged alternately in the column direction.

[0474] The display unit has a third arrangement ARR3 in which sub-pixels (G), sub-pixels (PS), and sub-pixels (R) are repeatedly arranged in this order in the column direction, and a fourth arrangement ARR4 in which sub-pixels (G), sub-pixels (PS), and sub-pixels (B) are repeatedly arranged in this order in the column direction. Further, in the row direction, the third arrangement ARR3, the third arrangement ARR3, the fourth arrangement ARR4, and the fourth arrangement ARR4 are repeatedly arranged in this order.

[0475] The display unit of the display device applying the pixel layout shown in FIG. 59B has a first arrangement ARR1 in which sub-pixels (G), sub-pixels (R), sub-pixels (PS), and sub-pixels (R) are repeatedly arranged in this order in the row direction, a second arrangement ARR2 in which sub-pixels (PS), sub-pixels (R), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in this order in the row direction, a third arrangement ARR3 in which sub-pixels (G), sub-pixels (B), sub-pixels (PS), and sub-pixels (B) are repeatedly arranged in this order in the row direction, and a fourth arrangement ARR4 in which sub-pixels (PS), sub-pixels (B), sub-pixels (G), and sub-pixels (R) are repeatedly arranged in this order in the row direction. Further, in the column direction, the first arrangement ARR1, the second arrangement ARR2, the third arrangement ARR3, and the fourth arrangement ARR4 are repeatedly arranged in this order.

[0476] The display unit has a fifth arrangement ARR5 in which sub-pixels (G) and sub-pixels (PS) are alternately and repeatedly arranged in the column direction, and a sixth arrangement ARR6 in which sub-pixels (R) and sub-pixels (B) are alternately and repeatedly arranged in the column direction. Further, in the row direction, the fifth arrangement ARR5 and the sixth arrangement ARR6 are alternately and repeatedly arranged.

[0477] A modified example of FIG. 59A is shown in FIG. 60A.

[0478] The display section of a display device employing the pixel layout shown in FIG. 60A includes a first array ARR1 in which subpixels 110b, 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array ARR2 in which subpixels 110d, 110a, 110d, and 110c are repeatedly arranged in this order in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are alternately arranged in the column direction. The display section may also include a third array ARR3 in which subpixels 110a and 110c are alternately arranged in the row direction. The pixel layout shown in FIG. 60A may be referred to as a diamond arrangement.

[0479] The display unit has a fourth array ARR4 in which the subpixels 110b and 110d are alternately arranged in the column direction, and a fifth array ARR5 in which the subpixels 110a and 110c are alternately arranged in the column direction. Furthermore, the fourth array ARR4 and the fifth array ARR5 are alternately arranged in the row direction. The display unit may also have a sixth array ARR6 in which the subpixels 110b, 110a, 110d, 110b, 110c, and 110d are alternately arranged in the column direction.

[0480] 60A shows a configuration in which the top surfaces of the subpixels 110a and 110c are rectangular with rounded corners and the top surfaces of the subpixels 110b and 110d are triangular with rounded corners, but the top surface shapes of the subpixels are not particularly limited. For example, the top surfaces of the subpixels 110b and 110d may be rectangular with rounded corners or circular.

[0481] Figure 60B shows an example configuration in which subpixel 110a shown in Figure 60A is a subpixel (R) having the function of emitting red light, subpixel 110b is a subpixel (G) having the function of emitting green light, subpixel 110c is a subpixel (B) having the function of emitting blue light, and subpixel 110d is a subpixel (PS) having a light-receiving function.

[0482] 60B is applied to a display unit having a first array ARR1 in which subpixels (G), (R), (G), and (B) are repeatedly arranged in this order in the row direction, and a second array ARR2 in which subpixels (PS), (R), (PS), and (B) are repeatedly arranged in this order in the row direction. The display unit may also have a third array ARR3 in which subpixels (R) and (B) are repeatedly arranged alternately in the row direction.

[0483] The display unit has a fourth array ARR4 in which subpixels (G), subpixels (R), subpixels (PS), subpixels (G), subpixels (B), and subpixels (PS) are repeatedly arranged in this order in the column direction. The display unit may have a fifth array ARR5 in which subpixels (R) and subpixels (B) are repeatedly arranged alternately in the column direction, or a sixth array ARR6 in which subpixels (G) and subpixels (PS) are repeatedly arranged alternately in the column direction.

[0484] <Configuration example 2 of the display device> An example of a configuration different from the display device 100 described above is shown in FIGS. 61A and 61B.

[0485] Fig. 61A is a top view of display device 100A. Fig. 61B shows a cross-sectional view taken along dashed dotted line X3-X4 in Fig. 61A. Display device 100A is an example in which the arrangement of pixels 110 shown in Fig. 54I is applied.

[0486] <Example of a method for manufacturing a display device> Next, an example of a manufacturing method of a display device will be described with reference to FIGS. 62 to 71. FIGS. 62A to 62F are top views illustrating a manufacturing method of the display device 100 shown in FIGS. 53A and 53B. FIGS. 63A to 63C show a cross-sectional view taken along dashed line X1-X2 in FIG. 53A and a cross-sectional view taken along dashed line Y1-Y2 side by side. FIGS. 64 to 69 and 70A are similar to FIG. 63. FIGS. 70B to 70D show a cross-sectional view taken along dashed line X1-X2 in FIG. 53A. FIG. 70E shows a cross-sectional view taken along dashed line Y1-Y2 in FIG. 53A. FIGS. 71A to 71F show enlarged views illustrating the cross-sectional structure of insulating layer 127 and its surroundings.

[0487] Thin films (insulating films, semiconductor films, conductive films, etc.) that make up display devices can be formed using methods such as sputtering, chemical vapor deposition (CVD), vacuum evaporation, pulsed laser deposition (PLD), and ALD. CVD methods include plasma enhanced chemical vapor deposition (PECVD) and thermal CVD. One type of thermal CVD method is metal organic chemical vapor deposition (MOCVD).

[0488] Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, and knife coating.

[0489] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet printing can be used to fabricate light-emitting devices. Vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, as well as chemical vapor deposition (CVD). In particular, functional layers included in the EL layer (e.g., hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer) can be formed by vapor deposition (e.g., vacuum deposition), coating methods (e.g., dip coating, die coating, bar coating, spin coating, spray coating), printing methods (e.g., inkjet printing, screen printing, offset printing, flexography, gravure printing, microcontact printing, etc.).

[0490] When processing the thin film that constitutes the display device, it can be processed using a photolithography method or the like. Alternatively, the thin film may be processed using a nanoimprint method, a sandblasting method, a lift-off method or the like. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0491] There are two typical photolithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0492] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure can also be performed using immersion exposure technology. Extreme ultraviolet light (EUV) or X-rays can also be used as the light used for exposure. Instead of light used for exposure, an electron beam can also be used. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0493] For etching the thin film, dry etching, wet etching, sandblasting, or the like can be used.

[0494] First, as shown in FIG. 63A, a conductive film 111 is formed over a layer 101 including a transistor.

[0495] Then, a first layer 113A is formed on the conductive film 111, a first sacrificial layer 118A is formed on the first layer 113A, and a second sacrificial layer 119A is formed on the first sacrificial layer 118A.

[0496] 63A, in the cross-sectional view between Y1 and Y2, the end of first layer 113A on the connection portion 140 side is located more inward than the end of first sacrificial layer 118A. For example, by using a mask for defining the film formation area (also called an area mask or a rough metal mask to distinguish it from a fine metal mask), it is possible to vary the regions where films are formed by first layer 113A, first sacrificial layer 118A, and second sacrificial layer 119A. In one embodiment of the present invention, a light-emitting device is formed using a resist mask. However, by combining this with an area mask as described above, a light-emitting device can be fabricated using a relatively simple process.

[0497] The conductive film 111 is a layer that will be processed later to become the pixel electrodes 111a, 111b, and 111c and the conductive layer 123. Therefore, the structure applicable to the pixel electrodes described above can be applied to the conductive film 111. The conductive film 111 can be formed by, for example, sputtering or vacuum evaporation.

[0498] The first layer 113A is a layer that will later become the EL layer 113a. Therefore, the above-mentioned configurations applicable to the EL layer 113a can be applied. The first layer 113A can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, or a coating method. The first layer 113A is preferably formed by a vapor deposition method. When forming a film using a vapor deposition method, a premixed material may be used. In this specification and the like, a premixed material is a composite material in which multiple materials are blended or mixed in advance.

[0499] The first sacrificial layer 118A and the second sacrificial layer 119A are made of a film that is highly resistant to the processing conditions of the first layer 113A and the second layer 113B and third layer 113C formed in later steps, specifically, a film that has a large etching selectivity with respect to various EL layers.

[0500] The first sacrificial layer 118A and the second sacrificial layer 119A can be formed by, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition. The first sacrificial layer 118A, which is formed on and in contact with the EL layer, is preferably formed using a method that causes less damage to the EL layer than the second sacrificial layer 119A. For example, the first sacrificial layer 118A is preferably formed using ALD or vacuum deposition rather than sputtering. The first sacrificial layer 118A and the second sacrificial layer 119A are formed at a temperature lower than the heat-resistant temperature limit of the EL layer (typically, 200°C or lower, preferably 100°C or lower, and more preferably 80°C or lower).

[0501] It is preferable to use a film that can be removed by wet etching for the first sacrificial layer 118A and the second sacrificial layer 119A. By using wet etching, damage to the first layer 113A during processing of the first sacrificial layer 118A and the second sacrificial layer 119A can be reduced compared to when dry etching is used.

[0502] It is preferable to use a film for the first sacrificial layer 118A that has a large etching selectivity with respect to the second sacrificial layer 119A.

[0503] In the process of processing the various sacrificial layers in the manufacturing method of the display device of this embodiment, it is desirable that the layers constituting the EL layer (such as the hole injection layer, hole transport layer, light-emitting layer, and electron transport layer) are not easily processed, and that the various sacrificial layers are not easily processed in the process of processing the layers constituting the EL layer. It is desirable to select the material and processing method of the sacrificial layer and the processing method of the EL layer taking these factors into consideration.

[0504] In this embodiment, an example is shown in which the sacrificial layer is formed with a two-layer structure of a first sacrificial layer and a second sacrificial layer, but the sacrificial layer may have a single-layer structure or a stacked structure of three or more layers.

[0505] The first sacrificial layer 118A and the second sacrificial layer 119A may each be, for example, a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic film such as an inorganic insulating film.

[0506] The first sacrificial layer 118A and the second sacrificial layer 119A can be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. It is particularly preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet light for one or both of the first sacrificial layer 118A and the second sacrificial layer 119A can prevent the EL layer from being exposed to ultraviolet light, thereby suppressing deterioration of the EL layer, which is preferable.

[0507] The first sacrificial layer 118A and the second sacrificial layer 119A can be made of a metal oxide such as In-Ga-Zn oxide. For example, an In-Ga-Zn oxide film can be formed as the first sacrificial layer 118A or the second sacrificial layer 119A by sputtering. Other examples include indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), and indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide). Alternatively, silicon-containing indium tin oxide can be used.

[0508] Instead of the gallium, an element M (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used. In particular, it is preferable that M is one or more elements selected from gallium, aluminum, and yttrium.

[0509] The first sacrificial layer 118A and the second sacrificial layer 119A can be made of any of the various inorganic insulating films that can be used for the protective layers 131 and 132. In particular, oxide insulating films are preferable because they have higher adhesion to the EL layer than nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the first sacrificial layer 118A and the second sacrificial layer 119A. For example, an aluminum oxide film can be formed as the first sacrificial layer 118A or the second sacrificial layer 119A by the ALD method. Using the ALD method is preferable because it can reduce damage to the underlying layer (particularly the EL layer, etc.).

[0510] For example, the first sacrificial layer 118A may be an inorganic insulating film (e.g., an aluminum oxide film) formed by ALD, and the second sacrificial layer 119A may be an In-Ga-Zn oxide film formed by sputtering. Alternatively, the second sacrificial layer 119A may be an aluminum film or a tungsten film.

[0511] The first sacrificial layer 118A and the second sacrificial layer 119A may be made of a material that is soluble in a chemically stable solvent, at least for the film located on the topmost side of the first layer 113A. In particular, materials that dissolve in water or alcohol are suitable for use as the first sacrificial layer 118A or the second sacrificial layer 119A. When forming a film of such a material, it is preferable to apply the material dissolved in a solvent such as water or alcohol by a wet film formation method, and then perform a heat treatment to evaporate the solvent. In this case, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the EL layer.

[0512] The first sacrificial layer 118A and the second sacrificial layer 119A may be formed using a wet film formation method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0513] The first sacrificial layer 118A and the second sacrificial layer 119A may be made of an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin.

[0514] 63B, a resist mask 190a is formed on the second sacrificial layer 119A. The resist mask can be formed by applying a photosensitive resin (photoresist) and then performing exposure and development.

[0515] The resist mask may be made of either a positive resist material or a negative resist material.

[0516] As shown in Fig. 62A, the resist mask 190a is provided in a position that overlaps with an area that will later become the subpixel 110a. Preferably, the resist mask 190a has an island-shaped pattern for each subpixel 110a. Alternatively, the resist mask 190a may have a strip-shaped pattern for multiple subpixels 110a that are aligned in a row (aligned in the Y direction in Fig. 62A).

[0517] Note that the resist mask 190a is preferably provided also in a position overlapping with a region that will later become the connection portion 140. This can prevent the region of the conductive film 111 that will later become the conductive layer 123 from being damaged during the manufacturing process of the display device.

[0518] 63C, a resist mask 190a is used to remove a portion of the second sacrificial layer 119A to form a second sacrificial layer 119a. The second sacrificial layer 119a remains in the region that will later become the subpixel 110a and the region that will later become the connection portion 140.

[0519] When etching the second sacrificial layer 119A, it is preferable to use etching conditions with a high selectivity so that the first sacrificial layer 118A is not removed by the etching. Furthermore, when processing the second sacrificial layer 119A, the EL layer is not exposed, so there is a wider range of processing methods to choose from than when processing the first sacrificial layer 118A. Specifically, even when a gas containing oxygen is used as an etching gas when processing the second sacrificial layer 119A, deterioration of the EL layer can be further suppressed.

[0520] Thereafter, the resist mask 190a is removed. For example, the resist mask 190a can be removed by ashing using oxygen plasma. Alternatively, the resist mask 190a may be removed by wet etching. At this time, the first sacrificial layer 118A is located on the outermost surface and the first layer 113A is not exposed, so that damage to the first layer 113A can be suppressed in the process of removing the resist mask 190a. This also broadens the range of methods for removing the resist mask 190a.

[0521] Next, as shown in FIG. 64A, the second sacrificial layer 119a is used as a hard mask to remove a portion of the first sacrificial layer 118A, thereby forming a first sacrificial layer 118a.

[0522] The first sacrificial layer 118A and the second sacrificial layer 119A can be processed by wet etching or dry etching, respectively. The first sacrificial layer 118A and the second sacrificial layer 119A are preferably processed by anisotropic etching.

[0523] Compared to the case of using dry etching, the use of wet etching can reduce damage to the first layer 113A when processing the first sacrificial layer 118A and the second sacrificial layer 119A. When using wet etching, it is preferable to use a chemical solution such as a developer, a tetramethylammonium hydroxide solution (TMAH), diluted hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0524] When dry etching is used, deterioration of the first layer 113A can be suppressed by not using a gas containing oxygen as an etching gas. When dry etching is used, it is preferable to use a gas containing a noble gas (also called a rare gas) such as CF, C4F8, SF6, CHF3, Cl2, HO, BCl3, or He as an etching gas.

[0525] For example, when an aluminum oxide film formed by ALD is used as the first sacrificial layer 118A, the first sacrificial layer 118A can be processed by dry etching using CHF3 and He. When an In-Ga-Zn oxide film formed by sputtering is used as the second sacrificial layer 119A, the second sacrificial layer 119A can be processed by wet etching using diluted phosphoric acid.

[0526] Next, as shown in FIG. 64B, the second sacrificial layer 119a and the first sacrificial layer 118a are used as a hard mask to remove a portion of the first layer 113A, thereby forming the EL layer 113a.

[0527] 64B, in the region corresponding to the subpixel 110a, a stacked structure of the EL layer 113a, the first sacrificial layer 118a, and the second sacrificial layer 119a remains on the conductive film 111. In addition, in the region corresponding to the connection portion 140, a stacked structure of the first sacrificial layer 118a and the second sacrificial layer 119a remains on the conductive film 111.

[0528] Through the above steps, the regions of the first layer 113A, the first sacrificial layer 118A, and the second sacrificial layer 119A that are not overlapped with the resist mask 190a can be removed.

[0529] Note that part of the first layer 113A may be removed using the resist mask 190a, and then the resist mask 190a may be removed.

[0530] Alternatively, the process may proceed to the next step without removing the resist mask 190a. In this case, when processing the conductive film 111 in a later step, not only the sacrificial layer but also the resist mask can be used as a mask. Processing the conductive film 111 using the resist masks 190a, 190b, and 190c may make the conductive film 111 easier to process than using only the sacrificial layer as a hard mask. For example, the range of options for processing the conductive film 111, the material of the sacrificial layer, or the material of the conductive film can be expanded.

[0531] The first layer 113A is preferably processed by anisotropic etching, particularly anisotropic dry etching, or wet etching may be used.

[0532] When dry etching is used, deterioration of the first layer 113A can be suppressed by not using a gas containing oxygen as the etching gas.

[0533] An etching gas containing oxygen may be used. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This can reduce damage to the first layer 113A. Furthermore, problems such as adhesion of reaction products that occur during etching can be reduced.

[0534] When dry etching is used, it is preferable to use a gas containing one or more of H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or noble gases (also called rare gases) such as He and Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas. Specifically, for example, a gas containing H2 and Ar, or a gas containing CF4 and He may be used as the etching gas. Alternatively, for example, a gas containing CF4, He, and oxygen may be used as the etching gas.

[0535] Next, as shown in FIG. 64C, a second layer 113B is formed on the second sacrificial layer 119a and the conductive film 111, a first sacrificial layer 118B is formed on the second layer 113B, and a second sacrificial layer 119B is formed on the first sacrificial layer 118B.

[0536] As shown in FIG. 64C, in the cross section taken along line Y1-Y2, the end of second layer 113B on the connection portion 140 side is located more inward than the end of first sacrificial layer 118B.

[0537] The second layer 113B is a layer that will later become the EL layer 113b. The EL layer 113b emits light in a wavelength range different from that of the EL layer 113a. The configuration and materials that can be applied to the EL layer 113b are the same as those of the EL layer 113a. The second layer 113B can be formed using the same method as the first layer 113A.

[0538] The first sacrificial layer 118B can be formed using a material that can be applied to the first sacrificial layer 118A. The second sacrificial layer 119B can be formed using a material that can be applied to the second sacrificial layer 119A.

[0539] Next, as shown in FIG. 64C, a resist mask 190b is formed on the second sacrificial layer 119B.

[0540] 62B, the resist mask 190b is provided in a position that overlaps with an area that will later become the sub-pixel 110b. Preferably, the resist mask 190b has an island-shaped pattern for each sub-pixel 110b. Alternatively, the resist mask 190b may have a strip-shaped pattern for multiple sub-pixels 110b that are arranged in a row.

[0541] The resist mask 190b may also be provided at a position overlapping the region that will later become the connection portion 140.

[0542] Next, using a resist mask 190b, a portion of the second sacrificial layer 119B is removed to form a second sacrificial layer 119b, which remains in the region that will later become the subpixel 110b.

[0543] Thereafter, the resist mask 190b is removed, and then, using the second sacrificial layer 119b as a hard mask, a portion of the first sacrificial layer 118B is removed to form the first sacrificial layer 118b.

[0544] Then, as shown in FIG. 65A, second sacrificial layer 119b and first sacrificial layer 118b are used as a hard mask to remove a portion of second layer 113B, thereby forming EL layer 113b.

[0545] 65A, in the region corresponding to the subpixel 110b, a layered structure of the EL layer 113b, the first sacrificial layer 118b, and the second sacrificial layer 119b remains on the conductive film 111. In addition, in the region corresponding to the connection portion 140, a layered structure of the first sacrificial layer 118a and the second sacrificial layer 119a remains on the conductive film 111.

[0546] Through the above steps, it is possible to remove the regions of the second layer 113B, the first sacrificial layer 118B, and the second sacrificial layer 119B that are not overlapped with the resist mask 190b. These layers can be processed using a method that can be applied to processing the second layer 113B, the first sacrificial layer 118A, and the second sacrificial layer 119A.

[0547] Next, as shown in FIG. 65B, a third layer 113C is formed on the second sacrificial layer 119a, the second sacrificial layer 119b, and the conductive film 111, a first sacrificial layer 118C is formed on the third layer 113C, and a second sacrificial layer 119C is formed on the first sacrificial layer 118C.

[0548] As shown in FIG. 65B, in the cross section taken along line Y1-Y2, the end of third layer 113C on the connection portion 140 side is located more inward than the end of first sacrificial layer 118C.

[0549] The third layer 113C is a layer that will later become the EL layer 113c. The EL layer 113c emits light in a wavelength region different from that of the EL layers 113a and 113b. The configuration, materials, etc. that can be applied to the EL layer 113c are the same as those of the EL layer 113a. The third layer 113C can be formed using the same method as the first layer 113A.

[0550] The first sacrificial layer 118C can be formed using a material that can be applied to the first sacrificial layer 118A. The second sacrificial layer 119C can be formed using a material that can be applied to the second sacrificial layer 119A.

[0551] Next, as shown in FIG. 65B, a resist mask 190c is formed on the second sacrificial layer 119C.

[0552] 62C, the resist mask 190c is provided in a position that overlaps with an area that will later become the subpixel 110c. Preferably, the resist mask 190c has an island-shaped pattern for each subpixel 110c. Alternatively, the resist mask 190c may have a strip-shaped pattern for multiple subpixels 110c that are arranged in a row.

[0553] The resist mask 190c may also be provided at a position that overlaps with the region that will later become the connection portion 140.

[0554] Next, using a resist mask 190c, a portion of the second sacrificial layer 119C is removed to form a second sacrificial layer 119c, which remains in the region that will later become the subpixel 110c.

[0555] Thereafter, the resist mask 190c is removed, and then, using the second sacrificial layer 119c as a hard mask, a portion of the first sacrificial layer 118C is removed to form the first sacrificial layer 118c.

[0556] Then, as shown in FIG. 65C, the second sacrificial layer 119c and the first sacrificial layer 118c are used as a hard mask to remove a portion of the third layer 113C, thereby forming the EL layer 113c.

[0557] 65C, in the region corresponding to the subpixel 110c, a stacked structure of the EL layer 113c, the first sacrificial layer 118c, and the second sacrificial layer 119c remains on the conductive film 111. In addition, in the region corresponding to the connection portion 140, a stacked structure of the first sacrificial layer 118a and the second sacrificial layer 119a remains on the conductive film 111.

[0558] Through the above steps, it is possible to remove the regions of the third layer 113C, the first sacrificial layer 118C, and the second sacrificial layer 119C that are not overlapped with the resist mask 190c. These layers can be processed using a method that is applicable to processing the first layer 113A, the first sacrificial layer 118A, and the second sacrificial layer 119A.

[0559] Next, as shown in FIG. 66A, a fourth layer 113D is formed on the second sacrificial layer 119a, the second sacrificial layer 119b, the second sacrificial layer 119c, and the conductive film 111, a first sacrificial layer 118D is formed on the fourth layer 113D, and a second sacrificial layer 119D is formed on the first sacrificial layer 118D.

[0560] As shown in FIG. 66A, in the cross-sectional view taken along line Y1-Y2, the end of the fourth layer 113D on the connection portion 140 side is located more inward than the end of the first sacrificial layer 118D.

[0561] The fourth layer 113D is a layer that will later become the light-receiving layer 113d. The light-receiving layer 113d has an active layer. The fourth layer 113D can be formed using the same method as the first layer 113A.

[0562] The first sacrificial layer 118D can be formed using a material that can be applied to the first sacrificial layer 118A. The second sacrificial layer 119D can be formed using a material that can be applied to the second sacrificial layer 119A.

[0563] Next, as shown in FIG. 66A, a resist mask 190d is formed on the second sacrificial layer 119D.

[0564] 62D, the resist mask 190d is provided in a position that overlaps with an area that will later become the subpixel 110d. Preferably, the resist mask 190d has an island-shaped pattern for each subpixel 110d. Alternatively, the resist mask 190d may have a strip-shaped pattern for multiple subpixels 110d that are arranged in a row.

[0565] The resist mask 190d may also be provided at a position that overlaps with the region that will later become the connection section 140.

[0566] Next, a resist mask 190d is used to remove a portion of the second sacrificial layer 119D to form a second sacrificial layer 119d, which remains in the region that will later become the subpixel 110d.

[0567] Thereafter, the resist mask 190d is removed, and then, using the second sacrificial layer 119d as a hard mask, a portion of the first sacrificial layer 118D is removed to form a first sacrificial layer 118d.

[0568] Then, as shown in FIG. 66B, second sacrificial layer 119d and first sacrificial layer 118d are used as a hard mask to remove a portion of fourth layer 113D, thereby forming light-receiving layer 113d.

[0569] 66B, in the region corresponding to the subpixel 110d, a layered structure of the light receiving layer 113d, the first sacrificial layer 118d, and the second sacrificial layer 119d remains on the conductive film 111. In addition, in the region corresponding to the connection portion 140, a layered structure of the first sacrificial layer 118a and the second sacrificial layer 119a remains on the conductive film 111.

[0570] Through the above steps, it is possible to remove the regions of the fourth layer 113D, the first sacrificial layer 118D, and the second sacrificial layer 119D that are not overlapped with the resist mask 190d. These layers can be processed using a method that is applicable to processing the first layer 113A, the first sacrificial layer 118A, and the second sacrificial layer 119A.

[0571] The side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d are preferably perpendicular or approximately perpendicular to the surface on which they are formed. For example, the angle between the surface on which they are formed and these side surfaces is preferably 60 degrees or more and 90 degrees or less.

[0572] Next, as shown in FIG. 67A, the conductive film 111 is processed using the first sacrificial layer 118a, the first sacrificial layer 118b, the first sacrificial layer 118c, the first sacrificial layer 118d, the second sacrificial layer 119a, the second sacrificial layer 119b, the second sacrificial layer 119c, and the second sacrificial layer 119d as a hard mask to form the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111c, the pixel electrode 111d, and the conductive layer 123.

[0573] When the conductive film 111 is processed, a part of the transistor-including layer 101 (specifically, the insulating layer located at the outermost surface) may be processed to form a recess. In the following description, a case where a recess is provided in the transistor-including layer 101 will be described as an example, but the recess is not necessarily provided.

[0574] Here, in order to form the conductive layer 123, it is preferable that any one of the first sacrificial layer 118a, the first sacrificial layer 118b, the first sacrificial layer 118c, and the first sacrificial layer 118d and any one of the second sacrificial layer 119a, the second sacrificial layer 119b, the second sacrificial layer 119c, and the second sacrificial layer 119d be provided in the connection portion 140. Any two or all of the first sacrificial layer 118a, the first sacrificial layer 118b, the first sacrificial layer 118c, and the first sacrificial layer 118d and any two or all of the second sacrificial layer 119a, the second sacrificial layer 119b, the second sacrificial layer 119c, and the second sacrificial layer 119d be provided in the connection portion 140. By providing the sacrificial layer in the connection portion 140, a region of the conductive film 111 that becomes the conductive layer 123 can be prevented from being damaged during a manufacturing process of the display device. Therefore, it is preferable to form the first sacrificial layer 118a and the second sacrificial layer 119a in the connection section 140, as these layers are fabricated in the shortest time.

[0575] The conductive film 111 can be processed by a wet etching method or a dry etching method. The conductive film 111 is preferably processed by anisotropic etching.

[0576] Next, as shown in FIG. 67B, an insulating film 125A is formed to cover the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111c, the pixel electrode 111d, the EL layer 113a, the EL layer 113b, the EL layer 113c, the light-receiving layer 113d, the first sacrificial layer 118a, the first sacrificial layer 118b, the first sacrificial layer 118c, the first sacrificial layer 118d, the second sacrificial layer 119a, the second sacrificial layer 119b, the second sacrificial layer 119c, and the second sacrificial layer 119d.

[0577] The insulating film 125A can be, for example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. Alternatively, a metal oxide film such as an indium gallium zinc oxide film may be used.

[0578] The insulating film 125A preferably functions as a barrier insulating film against at least one of water and oxygen, or has a function of suppressing the diffusion of at least one of water and oxygen, or has a function of capturing or fixing (also called gettering) at least one of water and oxygen.

[0579] In this specification and the like, a barrier insulating film refers to an insulating film having barrier properties. In addition, in this specification and the like, the barrier properties refer to a function of suppressing the diffusion of a corresponding substance (also referred to as low permeability), or a function of capturing or fixing (also referred to as gettering) a corresponding substance.

[0580] The insulating film 125A has the above-mentioned barrier insulating film function or gettering function, which makes it possible to suppress the intrusion of impurities (typically water or oxygen) that can diffuse into each light-emitting device from the outside. With this configuration, it is possible to provide a display device with excellent reliability.

[0581] Next, as shown in FIG. 67C, an insulating film 127A is formed on the insulating film 125A.

[0582] 62E, the insulating film 127A is preferably formed so as to have an opening at a position overlapping the conductive layer 123 (connection portion 140). The insulating film 127A can be patterned by, for example, applying a photosensitive resin and then exposing and developing it.

[0583] As shown in FIG. 70A, the insulating film 127A may be formed so as to have openings at positions overlapping with the pixel electrodes 111a, 111b, 111c, and 111d.

[0584] The insulating film 127A can be made of an organic material. Examples of organic materials include acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. The insulating film 127A can also be made of an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. The insulating film 127A can also be made of a photosensitive resin. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0585] The method for forming the insulating film 127A is not particularly limited, and it can be formed using a wet film formation method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating. In particular, it is preferable to form the insulating film 127A by spin coating.

[0586] The insulating films 125A and 127A are preferably formed by a method that causes less damage to the EL layer. In particular, since the insulating film 125A is formed in contact with the side surface of the EL layer, it is preferably formed by a method that causes less damage to the EL layer than the insulating film 127A. Furthermore, the insulating films 125A and 127A are each formed at a temperature lower than the heat resistance temperature of the EL layer (typically 200°C or lower, preferably 100°C or lower, and more preferably 80°C or lower). For example, an aluminum oxide film can be formed as the insulating film 125A by the ALD method. The ALD method is preferable because it can reduce film damage during film formation and also enables the formation of a film with high coverage.

[0587] Next, as shown in FIG. 68A , insulating layers 125 and 127 are formed by processing insulating films 125A and 127A. Insulating layer 127 is formed so as to contact the side surfaces of insulating layer 125 and the upper surface of the recess. Insulating layer 125 (and further insulating layer 127) is provided so as to cover the side surfaces of pixel electrode 111a, pixel electrode 111b, pixel electrode 111c, and pixel electrode 111d. This prevents a film (a film constituting an EL layer, a film constituting a light-receiving layer, or a common electrode) to be formed later from contacting pixel electrode 111a, pixel electrode 111b, pixel electrode 111c, or pixel electrode 111d, thereby preventing a short circuit in the light-emitting device. Furthermore, insulating layers 125 and 127 are preferably provided so as to cover the side surfaces of EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d. This prevents films to be formed later from coming into contact with the side surfaces of these layers, thereby preventing the light-emitting device from shorting out, and also prevents damage to the EL layers 113a, 113b, 113c, and the light-receiving layer 113d in later processes.

[0588] In particular, if a recess is provided in a part of the layer 101 including the transistor (specifically, in the insulating layer located on the outermost surface), it becomes possible to cover the entire side surfaces of the pixel electrodes 111a, 111b, 111c, and 111d with the insulating layers 125 and 127, which is preferable.

[0589] The insulating film 125A is preferably processed by dry etching. The insulating film 125A is preferably processed by anisotropic etching. The insulating film 125A can be processed using an etching gas that can be used to process the first sacrificial layer 118A and the second sacrificial layer 119A.

[0590] The insulating film 127A is preferably processed by ashing using oxygen plasma, for example.

[0591] 68B, the first sacrificial layer 118a, the first sacrificial layer 118b, the first sacrificial layer 118c, the first sacrificial layer 118d, the second sacrificial layer 119a, the second sacrificial layer 119b, the second sacrificial layer 119c, and the second sacrificial layer 119d are removed, thereby exposing the EL layer 113a on the pixel electrode 111a, the EL layer 113b on the pixel electrode 111b, the EL layer 113c on the pixel electrode 111c, the light-receiving layer 113d on the pixel electrode 111d, and the conductive layer 123 at the connection portion 140. Note that a portion of first sacrificial layer 118a, first sacrificial layer 118b, first sacrificial layer 118c, first sacrificial layer 118d, second sacrificial layer 119a, second sacrificial layer 119b, second sacrificial layer 119c, or second sacrificial layer 119d may remain. For example, in connection portion 140, etc., a region of the sacrificial layer that overlaps with insulating layer 125 may remain (see FIG. 68B).

[0592] The height of the upper surface of insulating layer 125 and the height of the upper surface of insulating layer 127 preferably match or approximately match the height of the upper surface of at least one of EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d. The upper surface of insulating layer 127 preferably has a flat shape, and may have protrusions or recesses.

[0593] The sacrificial layer removal step can be performed using the same method as the sacrificial layer processing step. In particular, by using a wet etching method, damage to the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d can be reduced compared to when a dry etching method is used when removing the first sacrificial layer and the second sacrificial layer.

[0594] The first sacrificial layer and the second sacrificial layer may be removed in separate steps or in the same step.

[0595] Either or both of the first and second sacrificial layers may be removed by dissolving them in a solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0596] After removing the first and second sacrificial layers, a drying treatment may be performed to remove water contained in the EL layer and water adsorbed on the surface of the EL layer. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. A reduced pressure atmosphere is preferred because it allows drying at a lower temperature.

[0597] Next, as shown in Fig. 68C, layer 114 is formed to cover insulating layers 125 and 127, EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d. As shown in Fig. 68C, in the cross-sectional view between Y1 and Y2, the end of layer 114 on the connection portion 140 side is located inside connection portion 140, and conductive layer 123 remains exposed. Note that, depending on the level of conductivity of layer 114, layer 114 may be provided at connection portion 140.

[0598] The materials that can be used for the layer 114 are as described above. The layer 114 can be formed by a method such as a vapor deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, or a coating method. The layer 114 may also be formed using a premixed material.

[0599] If the insulating layers 125 and 127 were not provided, the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111c, or the pixel electrode 111d might come into contact with the layer 114. Contact between these layers might cause a short circuit in the light-emitting device or the light-receiving device, especially if the layer 114 has high conductivity. However, in the display device of one embodiment of the present invention, the insulating layers 125 and 127 cover the side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, the light-receiving layer 113d, the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111c, and the pixel electrode 111d. This prevents the highly conductive layer 114 from coming into contact with these layers, thereby preventing a short circuit in the light-emitting device. This improves the reliability of the light-emitting device.

[0600] Then, as shown in FIG. 68C, a common electrode 115 is formed on the layer 114 and the conductive layer 123.

[0601] The materials that can be used for the common electrode 115 are as described above. The common electrode 115 can be formed by, for example, sputtering or vacuum deposition. Alternatively, a film formed by deposition and a film formed by sputtering may be stacked.

[0602] Thereafter, protective layer 131 is formed on common electrode 115, and protective layer 132 is formed on protective layer 131. Furthermore, by using resin layer 122, substrate 120 is bonded onto protective layer 132, whereby display device 100 shown in FIG.

[0603] The materials and film formation methods that can be used for the protective layers 131 and 132 are as described above. Film formation methods for the protective layers 131 and 132 include vacuum deposition, sputtering, CVD, and ALD. The protective layers 131 and 132 may be films formed using different film formation methods. Furthermore, the protective layers 131 and 132 may each have a single-layer structure or a multilayer structure.

[0604] Note that a mask (also called an area mask or a rough metal mask) for defining a film formation area may be used when forming the common electrode 115. Alternatively, without using the mask for forming the common electrode 115, the process shown in Fig. 68C may be followed by the process of processing the common electrode 115 shown in Fig. 69A and Fig. 69B, and then the process of forming the protective layer 131 may be carried out.

[0605] As shown in Fig. 69A and Fig. 62F, a resist mask 190e is formed on the common electrode 115. There is a portion at the end on the Y2 side in Fig. 69A where the resist mask 190e is not provided. As shown in Fig. 62F, the resist mask 190e is provided in a region overlapping each subpixel and the connecting portion 140. In other words, the region where the resist mask 190e is not provided is located outside the connecting portion 140.

[0606] 69B, a resist mask 190e is used to remove a portion of the common electrode 115. In this manner, the common electrode 115 can be processed.

[0607] When the resist mask 190e is used, six photomasks are used in the series of manufacturing steps because the resist masks 190a, 190b, 190c, 190d, 190e, and the insulating film 127A are processed. When the resist mask 190e is not used, five photomasks are used in the series of manufacturing steps because the resist masks 190a, 190b, 190c, 190d, and the insulating film 127A are processed. However, a mask for defining a deposition area is used in the formation of the common electrode 115. The manufacturing method of the display device of one embodiment of the present invention does not require the use of a metal mask with a high-resolution pattern for forming an island-shaped EL layer, a mask for forming an island-shaped pixel electrode, and a mask for forming an insulating layer that covers an edge of the pixel electrode, thereby reducing the number of masks and the cost.

[0608] 70B, layer 114 may not be provided, and common electrode 115 may be formed to cover insulating layers 125 and 127, EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d. In other words, all layers constituting the EL layer may be formed separately for light-emitting devices that emit different colors. In this case, the EL layers of each light-emitting device are all formed in an island shape.

[0609] Here, contact between any of the pixel electrode 111a, the pixel electrode 111b, the pixel ele...

Claims

[Claim 1] a power supply line, a first transistor, a second transistor, a light emitting device, and a light receiving device; the light-emitting device has a first electrode, a light-emitting layer, a first electron transport layer, an electron injection layer, and a second electrode stacked in this order; the light-receiving device includes a third electrode, an active layer, a first hole transport layer, the electron injection layer, and the second electrode stacked in this order; the first electrode is electrically connected to one of the source and the drain of the first transistor; the second electrode is electrically connected to one of the source and the drain of the second transistor; the power supply line is electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor.

Images