Method and apparatus for growing a single crystal silicon ingot

Abstract

One embodiment provides a method of growing a single crystal silicon ingot, the method comprising the steps of: (a) introducing polycrystalline silicon into a crucible in a chamber; (b) melting the polycrystalline silicon in the crucible to form a silicon melt; (c) measuring the degree of melting of the polycrystalline silicon; and (d) after a predetermined portion of the polycrystalline silicon has melted, increasing the amount of inert gas supplied to the chamber and decreasing the pressure in the chamber.

Description

TECHNICAL FIELD

[0001] Embodiments relate to the growth of a single crystal silicon ingot, and more particularly, to a method and apparatus for growing a single crystal silicon ingot, which can prevent the generation of pinholes in a wafer manufactured after the growth of a single crystal silicon ingot due to the dissolution of argon (Ar) atoms in a silicon melt during the growth of the single crystal silicon ingot. BACKGROUND

[0002] Generally, a silicon wafer is manufactured through a process including a single crystal growth process for producing an ingot, a slicing process for slicing the ingot to obtain a wafer having a thin disc shape, a lapping process for removing damage caused by mechanical processing remaining in the wafer due to slicing, a polishing process for mirror-polishing the wafer, and a cleaning process for mirror-polishing the polished wafer and removing abrasives and foreign substances attached to the wafer.

[0003] In the above-described process, a process for growing a silicon single crystal can be performed by heating a growth crucible in which a high-purity silicon melt is filled, thereby melting a raw material, and growing a silicon single crystal by a Czochralski method (hereinafter, referred to as "CZ method") or the like. The method to be implemented in the present disclosure can be applied to the CZ method in which a seed is placed on a silicon melt, thereby growing a single crystal.

[0004] The CZ method uses a high-purity crucible made of quartz because it is required to manufacture a high-purity single crystal silicon ingot with high yield, and to raise a single crystal silicon ingot for a long time when the single crystal silicon ingot has a large diameter.

[0005] However, a conventional single crystal silicon ingot growth apparatus has the following problems.

[0006] In order to obtain a silicon melt (Si melt), poly-crystalline silicon (poly-Si) is supplied into a crucible, and then the crucible is heated to melt the poly-crystalline silicon. In this case, an inert gas such as argon (Ar) is supplied to the inside of the chamber, but argon atoms can be attached to the surface of the poly-crystalline silicon, and thus can be included in the silicon melt together with the melted poly-crystalline silicon.

[0007] The argon atoms included in the silicon melt as described above can be included in a single crystal silicon ingot grown from the silicon melt, and thus can form voids. Further, in a wafer manufactured through the above-described process, the voids can form pinholes, thereby causing a wafer failure. SUMMARY

[0008] TECHNICAL PROBLEM

[0009] Embodiments provide a method and apparatus for growing a single crystal silicon ingot, which can prevent the formation of pinholes in a wafer manufactured thereby.

[0010] Technical Solution

[0011] The object of the present disclosure can be achieved by providing a method of growing a single crystal silicon ingot, the method including the steps of: (a) filling a crucible in a chamber with polycrystalline silicon; (b) melting the polycrystalline silicon in the crucible, thereby forming a silicon melt; (c) measuring a degree of melting of the polycrystalline silicon; and (d) increasing a supply amount of an inert gas supplied to the chamber while decreasing an internal pressure of the chamber after a predetermined portion of the polycrystalline silicon has been melted.

[0012] The method can further include the step of: (e) additionally filling the crucible with the polycrystalline silicon after the melting of the polycrystalline silicon is completed. The internal pressure of the chamber in step (e) can be adjusted to be equal to the internal pressure of the chamber in step (d).

[0013] The supply amount of the inert gas supplied to the chamber can be decreased in step (e).

[0014] The method can further include the step of: (f) increasing the supply amount of the inert gas supplied to the chamber after a predetermined portion of the polycrystalline silicon filled in step (e) has been melted.

[0015] The internal pressure of the chamber in step (f) can be adjusted to be equal to the internal pressure of the chamber in step (e).

[0016] The measurement of the degree of melting of the polycrystalline silicon can be determined based on a ratio between a low-temperature portion and a high-temperature portion of a surface of the silicon melt in the crucible obtained by measuring the surface of the silicon melt.

[0017] The temperature of the low-temperature portion can be 800℃ to 900℃, and the temperature of the high-temperature portion can be 1000℃ or more.

[0018] The internal pressure of the chamber can be adjusted by an exhaust unit disposed below the chamber.

[0019] The method can further include the step of: (g) rotating the crucible in a predetermined direction or an opposite direction after step (f).

[0020] The amount of the inert gas supplied to the chamber and the internal pressure of the chamber in step (g) can be adjusted to be equal to the amount of the inert gas supplied to the chamber and the internal pressure of the chamber in step (f).

[0021] The rotation speed of the crucible can be 5rpm or more, and the rotation time of the crucible can be 1 hour or more.

[0022] In another aspect of the present disclosure, provided herein is an apparatus for growing a single crystal silicon ingot, including: a chamber; a crucible disposed inside the chamber and configured to contain a silicon melt; a heater disposed inside the chamber and placed around the crucible; an insulation shield disposed at an upper portion of the crucible; an inert gas supplier configured to supply an inert gas to an inner region of the chamber;

[0023] a temperature measurer configured to measure a surface temperature of the silicon melt; an exhaust unit configured to adjust an internal pressure of the chamber; a crucible rotator configured to support and rotate the crucible; and a controller configured to control operations of the exhaust unit, the inert gas supplier, the temperature measurer, and the crucible rotator.

[0024] After an initial filling and melting of a predetermined portion of the polycrystalline silicon in the crucible, the controller controls the inert gas supplier and the exhaust unit to increase the supply amount of the inert gas supplied to the chamber and to decrease the internal pressure of the chamber.

[0025] After the initial filling and melting of the polycrystalline silicon into the crucible is completed, the polycrystalline silicon can be additionally filled into the crucible, and while the additional polycrystalline silicon filling is being performed, the controller can control the inert gas supplier and the exhaust unit to maintain the internal pressure of the chamber constant and to decrease the supply amount of the inert gas.

[0026] After the melting of the polycrystalline silicon additionally filled in the crucible is completed, the controller can control the crucible rotator to rotate the crucible in a predetermined direction or in the opposite direction at a predetermined speed.

[0027] Advantageous effects

[0028] In the silicon single crystal ingot growth method and apparatus according to the embodiments, by adjusting the internal pressure of the chamber and the supply amount of the argon gas in the step of filling and melting the polycrystalline silicon, the failure rate caused by the generation of pinholes in the manufactured wafer can be reduced. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1 FIG. 1 is a view showing an apparatus for growing a single crystal silicon ingot according to an embodiment of the present disclosure.

[0030] Figure 2 FIG. 2 is a view showing Figure 1 the operations of the configurations in the apparatus.

[0031] Figure 3 FIG. 3 is a view showing a method for growing a single crystal silicon ingot according to an embodiment of the present disclosure.

[0032] Figures 4 to 7 FIG. 4 is a view showing Figure 3 the supply and melting of the polycrystalline silicon in the method.

[0033] FIGS. 8A to 8C are graphs showing the amount of argon supplied and the pressure inside the chamber in a single crystal silicon ingot growth method according to an embodiment of the present disclosure.

[0034] FIGS. 9A to 9C are graphs showing the rotation of the crucible in a single crystal silicon ingot growth method according to an embodiment of the present disclosure.

[0035] Figure 10 and 11 are graphs showing the effects of a single crystal silicon ingot growth method and apparatus according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0036] Hereinafter, the present disclosure will be described in detail by combining the embodiments. For better understanding of the present disclosure, the present disclosure will be described in detail by combining the accompanying drawings.

[0037] However, the embodiments of the present disclosure can be implemented in many different forms and should not be interpreted only as the embodiments presented herein. Rather, these embodiments are provided so that the present disclosure is complete and fully complete to those skilled in the art.

[0038] In addition, it can be understood that the relational terms used hereinbelow, such as "first", "second", "on", and "under", can be interpreted only to distinguish one element / element from another element / element, without necessarily requiring or involving a specific physical or logical relationship or order between the elements / elements.

[0039] Figure 1 is a graph showing a single crystal silicon ingot growth apparatus according to an embodiment of the present disclosure. Hereinafter, a single crystal silicon ingot growth apparatus according to an embodiment of the present disclosure will be described with reference to Figure 1 A single crystal silicon ingot growth apparatus according to an embodiment of the present disclosure will be described.

[0040] A single crystal silicon ingot growth apparatus 1000 according to an embodiment of the present disclosure can include a chamber 100 in which a space is formed in which a single crystal silicon ingot is grown from a silicon melt (Si melt), a crucible 200-250 configured to accommodate the silicon melt, a heater 400 configured to heat the crucible 200-250, a crucible rotator 300 configured to rotate and elevate the crucible 200-250, a heat shield 600 provided at an upper portion of the crucible 200-250 to block heat from the heater 400 toward the single crystal silicon ingot, a coolant pipe 500 provided in an inner portion of the chamber 100 at an upper portion of the chamber 100 and configured to cool the elevated hot single crystal silicon ingot, an inert gas supplier (not shown) configured to supply inert gas to an inner region of the chamber 100, and a temperature measurer 800 configured to measure the surface temperature of the silicon melt.

[0041] The chamber 100 provides a space in which a predetermined process of forming a single crystal silicon ingot from a silicon melt (Si melt) is performed.

[0042] The crucible 200-250 can be disposed inside the chamber 100 so as to accommodate the silicon melt (Si melt). The crucible 200-250 can be composed of a first crucible 200 directly contacting the silicon melt and a second crucible 250 supporting the first crucible 200 while surrounding an outer surface of the first crucible 200. The first crucible 200 can be made of quartz, and the second crucible 250 can be made of graphite.

[0043] The second crucible 250 can be divided into two or three parts to cope with expansion of the first crucible 200 due to heat. For example, when the second crucible 250 is divided into two parts, a gap is formed between the two parts, and thus the second crucible 250 can not be damaged even when the first crucible 200 within the second crucible 250 expands.

[0044] An insulation portion can be provided inside the chamber 100 to prevent heat release of the heater 400. Although only the heat shield 600 at the upper portion of the crucible 200-250 is shown in this embodiment, insulation portions can be respectively provided at the side surfaces of the crucible 200-250 and under the crucible 200-250.

[0045] The heater 400 can melt the polycrystalline silicon supplied to the inside of the crucible 200-250, thereby generating the silicon melt (Si melt). The heater 400 can receive electric current from a current supply rod (not shown) disposed above the heater 400.

[0046] A magnetic field generator (not shown) can be disposed outside the chamber 100 so as to apply a horizontal magnetic field to the crucible 200-250.

[0047] The crucible rotator 300 can be disposed at a central portion of a bottom surface of the crucible 200-250 so as to support and rotate the crucible 200-250. When a seed (not shown) dropped from a seed chuck 10 disposed on the crucible 200-250 is immersed in the silicon melt and then the silicon melt is solidified, a single crystal silicon ingot can be grown from the seed.

[0048] During the single crystal silicon ingot growth process, an inert gas such as argon (Ar) can be supplied to the inside of the chamber 100. In this embodiment, argon can be supplied by an inert gas supplier (not shown).

[0049] The inert gas supplier can be provided outside the chamber 100, and can supply argon to the inside of the chamber 100 through an opening provided in the upper region of the chamber 100. Argon supplied from the inert gas supplier can discharge oxygen remaining in the inside of the chamber 100 after evaporation from the silicon melt (Si melt), but can also penetrate the silicon melt in a state of being attached to the surface of the polysilicon. To prevent argon from penetrating the silicon melt, the single crystal silicon ingot growing apparatus and method can have the following configuration.

[0050] The temperature measurer 800 can be, for example, a pyrometer. In this case, the temperature measurer 800 can be provided in pairs above the chamber 100, without being limited thereto. For example, when a pair of temperature measurers 800 is provided, the pair of temperature measurers 800 can be respectively provided at positions symmetrical with respect to the center of the chamber 100. The temperature measurer 800 can measure the surface temperature of the silicon melt.

[0051] The transparent region 110 is provided in the upper region of the chamber 100. For example, a transparent member can be provided in the transparent region 110, and each of the temperature measurers 800 can measure the surface temperature of the silicon melt (Si melt) through the pair of transparent regions 110.

[0052] Figure 2 is a diagram showing Figure 1 the operation of each configuration in the apparatus.

[0053] In addition to the crucible rotator 300 and the temperature measurer 800 as Figure 1 described above, the single crystal silicon ingot growing apparatus 1000 according to the embodiment can further include an exhaust unit 150 and an inert gas supplier 900. The operation of the exhaust unit 150, the crucible rotator 300, the temperature measurer 800, and the inert gas supplier 900 can be controlled by the controller 700.

[0054] Figure 3 is a diagram showing a single crystal silicon ingot growing method according to an embodiment of the disclosure. Hereinafter, a method of growing a single crystal silicon ingot using Figure 1 and 2 the single crystal silicon ingot growing apparatus will be described with reference to Figure 3 .

[0055] First, the crucible in the chamber is filled with polysilicon (polycrystalline Si) (S100).

[0056] In this case, as the inert gas, argon can be supplied to the chamber. Accordingly, argon atoms can be adsorbed on the surface of the polysilicon in the crucible 200, as Figure 4 indicated.

[0057] Then, the temperature of the crucible can be increased by heating the member or the like, and thereby the polycrystalline silicon in the crucible can be melted to generate a silicon melt (S110). In this case, the polycrystalline silicon can form a silicon melt (Si melt) according to its melting, and the portion of the polycrystalline silicon that has not yet melted can float on the surface of the silicon melt, as shown in Figure 5 In this case, a portion of the argon element can be in a state of being still adsorbed on the surface of the polycrystalline silicon that has not yet melted.

[0058] Then, the degree of melting of the polycrystalline silicon can be measured (S120). In this case, the measurement of the degree of melting of the polycrystalline silicon can be achieved by determining the ratio between the low-temperature portion and the high-temperature portion of the surface of the silicon melt with the temperature measurer or the like. Since the temperature of the solid polycrystalline silicon is significantly lower than the temperature of the liquid silicon melt, the temperature distribution profile of the low-temperature polycrystalline silicon floating on the high-temperature silicon melt can be measured by measuring the surface temperature of the silicon melt in the crucible with the temperature measurer or the like.

[0059] For example, the temperature of the low-temperature portion (i.e., the low-temperature polycrystalline silicon) can be 800°C to 900°C, and the temperature of the high-temperature portion (i.e., the silicon melt) can be 1000°C or higher.

[0060] When a predetermined portion of the polycrystalline silicon is measured to have melted, the supply amount of the argon gas supplied to the chamber can be increased, and the internal pressure of the chamber can be reduced (S130).

[0061] The case where a predetermined portion of the polycrystalline silicon is measured to have melted means that the surface area of the low-temperature polycrystalline silicon at the surface of the silicon melt in the crucible 200 is equal to or less than a predetermined value. In practice, it is difficult to measure the weight of the portion of the polycrystalline silicon that has melted. For this reason, whether the surface area of the low-temperature polycrystalline silicon at the surface of the silicon melt in the crucible 200 is equal to or less than a predetermined value is determined by measuring the internal temperature of the crucible 200 with the temperature measurer. When the surface area of the low-temperature polycrystalline silicon at the surface of the silicon melt in the crucible 200 is equal to or less than a predetermined value, it can be estimated that a predetermined portion of the polycrystalline silicon has melted. For example, when the surface area of the low-temperature polycrystalline silicon at the surface of the silicon melt in the crucible 200 is equal to or less than 10%, it can be determined that the given condition has been established.

[0062] When the argon gas is supplied in a state where a large amount of polycrystalline silicon remains in the crucible 200, argon atoms can be adsorbed onto the surface of the polycrystalline silicon. Therefore, in this case, the supply amount of the argon gas can not be increased. On the other hand, when it is determined that a predetermined portion of the polycrystalline silicon has melted, since the possibility of the argon being adsorbed or trapped on the surface of the polycrystalline silicon is reduced, the supply amount of the argon gas can be increased.

[0063] In this case, as shown in Figure 6As shown, by increasing the argon supply amount or supply rate, argon can be discharged outward from the surface of the silicon melt or a region adjacent thereto. Further, by reducing the internal pressure of the chamber, argon atoms and other atoms at the surface of the silicon melt can be effectively released. Here, the other atoms can be carbon or oxygen. For example, in the case of carbon, carbon can be introduced into the silicon melt from various portions in the chamber 100. In the case of oxygen, oxygen can be introduced into the silicon melt from quartz in the crucible 200. Carbon or oxygen introduced into the silicon melt can permeate the single crystal silicon ingot according to the rotation of the seed and the crucible 200. To this end, as described above, carbon or oxygen can be discharged outward by increasing the argon supply amount and reducing the internal pressure of the chamber.

[0064] By Figure 2 The adjustment of the argon supply amount and the internal pressure of the chamber can be achieved by the controller 700 controlling the operation of the inert gas supply 900 and the exhaust unit 150.

[0065] Generally, considering the size of the chamber and the crucible, it is necessary to fill the polycrystalline silicon into the crucible twice or more times to prepare the silicon melt required for the one-time production of a single crystal silicon ingot. This is because the size of the polycrystalline silicon supply device can not be sufficient to fill a very large amount of polycrystalline silicon at one time.

[0066] As described above, according to the continuation of step S130, after the predetermined time elapses while argon atoms and the like are discharged outward from the surface of the silicon melt in the crucible, or after the melting of the polycrystalline silicon is completed, the polycrystalline silicon can be additionally filled into the silicon melt in the crucible from the above-described polycrystalline silicon supply device (S140). That is, as Figure 7 As shown, the polycrystalline silicon (polycrystalline Si) can be additionally supplied to the silicon melt (Si melt) in the crucible 200.

[0067] In this case, the internal pressure of the chamber can be adjusted to be equal to the internal pressure of step S130, and the supply amount of the inert gas (i.e., argon) can be reduced. Further, the reduced argon supply amount can be equal to the argon supply amount in step S120.

[0068] Further, the degree of melting of the polycrystalline silicon can be measured, similarly to step S120. When a predetermined portion of the polycrystalline silicon is measured to have been melted, the supply amount of argon gas supplied to the chamber can be increased, and the internal pressure of the chamber can be maintained constant (S150).

[0069] That is, in step S140, in order to release argon atoms adsorbed on the surfaces of the silicon melt and the polycrystalline silicon, the supply amount of argon gas can be reduced.

[0070] The reason for increasing the argon supply amount in steps S130 and S150 is to release argon atoms outward, because when a large amount of polysilicon is melted, the temperature of the inside of the chamber and the temperature of the silicon melt increase, thereby causing the activity of argon atoms to increase, and thus, the possibility of capturing argon atoms on the surface of the silicon melt can increase. In addition, when a large amount of polysilicon remains without being melted, argon gas can hit the polysilicon block, and thus, the possibility of its capture can increase. For this reason, argon gas is not supplied or the supply amount thereof is decreased.

[0071] In addition, the reason for maintaining the internal pressure of the chamber constant after step S130 is to smoothly discharge argon gas, because a sufficient amount of argon gas already exists in the chamber.

[0072] In addition, when the polysilicon charging and melting are performed twice or more as described above are completed, a stabilization process can be subsequently performed. For example, the silicon melt in the crucible can be stabilized by rotating the crucible (S160). In this case, the temperature or the convection state in the silicon melt can be stabilized.

[0073] In addition, the amount of inert gas supplied to the chamber and the internal pressure of the chamber in step S160 can be equal to the amount of inert gas supplied to the chamber and the internal pressure of the chamber in step S150, respectively. Specifically, the rotation speed of the crucible can be 5 rpm or faster, the rotation time of the crucible can be 1 hour or longer, and the rotation direction of the crucible can be a predetermined direction or the opposite direction.

[0074] FIGS. 8A to 8C are graphs showing the argon supply amount and the internal pressure of the chamber in a single crystal silicon ingot growth method according to an embodiment of the disclosure. FIGS. 9A to 9C are graphs showing the rotation of the crucible in a single crystal silicon ingot growth method according to an embodiment of the disclosure.

[0075] FIG. 8A and FIG. 9A show the step of the first supply and melting of polysilicon, FIG. 8B and 9B show the step of the second and third supply and melting of polysilicon, and FIG. 8C and 9C show the stabilization process. In each of the graphs, the values on the horizontal and vertical axes can be optional, and thus, the increasing and decreasing relationship thereof should be noted.

[0076] Referring to FIG. 8A and FIG. 9A, in the step of the first supply and melting of polysilicon, the crucible is not rotated, the internal pressure of the chamber is decreased after a predetermined time elapses, and the argon supply amount is increased after a predetermined time elapses. The time can be a time at which it is measured that a large amount of the first supplied polysilicon has been melted.

[0077] In FIG. 8B and FIG. 9B, the supply amount of argon supplied to the chamber is repeatedly increased and decreased. The argon supply amount is again decreased during the additional supply of polysilicon after most of the polysilicon melt is completed. In addition, the argon supply amount can be again increased after most of the additional supplied polysilicon is melted. As can be seen, after the initial filling of polysilicon in FIG. 8A, the additional supply of polysilicon twice in FIG. 8B. In addition, as can be seen, the internal pressure of the chamber in FIG. 8B is increased after the completion of the melt of the initially filled polysilicon, and thus remains constant in FIG. 8B.

[0078] In addition, in FIG. 9B, as can be seen, the crucible is slowly rotated during the additional supply and melting steps of the polysilicon. However, the present disclosure is not limited to the above case, and the crucible can not be rotated.

[0079] In FIG. 8C, after the initial and additional filling and melting steps of the polysilicon are completed, the supply amount of argon can be equal to the increased argon supply amount in the latter half of FIG. 8A, and can remain constant. In addition, in FIG. 8C, the internal pressure of the chamber can remain constant.

[0080] In addition, as can be seen, in the stabilization step of FIG. 9C, the crucible is rotated at a predetermined speed in a predetermined direction.

[0081] Figure 10 and 11 are graphs showing the effects of the single crystal silicon ingot growth method and apparatus according to the embodiments of the present disclosure.

[0082] In Figure 10 , the horizontal axis represents a comparative example (reference) and an embodiment, and the vertical axis represents the failure rate. As Figure 10 indicated, as can be seen, when the pressure P and the argon supply amount A are adjusted according to the embodiment, the failure rate (i.e., the degree of pinhole generation) of the manufactured wafer is significantly reduced compared to the case where the pressure and the argon supply amount are adjusted according to the comparative example.

[0083] Figure 11 In Figure 11 , the horizontal axis represents the axial length of the ingot, and the vertical axis represents the carbon (C) concentration (ppma) at different portions of the ingot. As indicated, as can be seen, in this embodiment, the concentrations of carbon, fine particles, and metals at each portion of the ingot, particularly at the latter half of the axial length of the ingot, are significantly reduced compared to those in the comparative example. Since, in the above-described single crystal silicon ingot growth method and apparatus, the argon element and other elements can be expelled from the silicon melt by controlling the argon supply amount and the internal pressure of the chamber, such effects can be obtained.

[0084] Although the above-described embodiments are described mainly in connection with the restrictive embodiments and the accompanying drawings, the present disclosure is not limited to the above-described embodiments. It will be understood by those skilled in the art to which the present disclosure pertains that various modifications and changes are possible based on the above description.

[0085] Accordingly, the scope of the disclosure should not be construed as limited to the described embodiments but rather by the appended claims and their equivalents.

[0086] Industrial applicability

[0087] The apparatus and method according to the embodiments can be applied to the growth of a single crystal silicon ingot.

Claims

1. A method for growing a single-crystal silicon ingot, the method comprising the following steps: (a) Fill the crucible in the chamber with polycrystalline silicon; (b) Melt the polycrystalline silicon in the crucible to form a silicon melt; (c) Measure the temperature at different locations on the surface of the molten silicon and determine whether a predetermined portion of the polycrystalline silicon has melted; and (d) When the predetermined portion of polysilicon has melted, increase the supply of inert gas to the chamber while simultaneously reducing the internal pressure of the chamber. in, The determination is based on whether the area of ​​the low-temperature surface of the silicon melt is equal to or less than a predetermined value.

2. The method of claim 1, further comprising the following step: (e) After the polysilicon has melted completely, additional polysilicon is added to the crucible. In step (e), the internal pressure of the chamber is adjusted to be equal to the internal pressure of the chamber in step (d).

3. The method as described in claim 2, wherein, In step (e), the supply of inert gas to the chamber is reduced.

4. The method as described in claim 2 or 3, further comprising the following step: (f) After the predetermined portion of polysilicon filled in step (e) has melted, increase the supply of inert gas to the chamber.

5. The method of claim 4, wherein, Adjust the internal pressure of the chamber in step (f) to be equal to the internal pressure of the chamber in step (e).

6. The method of claim 1, wherein, The degree of melting of polycrystalline silicon is determined based on the ratio between the low-temperature and high-temperature portions of the silicon melt surface in the crucible, obtained by measuring the surface of the silicon melt.

7. The method of claim 6, wherein, The low-temperature section has a temperature of 800°C to 900°C, and the high-temperature section has a temperature of 1000°C or higher.

8. The method of claim 1, wherein, The internal pressure of the chamber is regulated by an exhaust unit located at the bottom of the chamber.

9. The method of claim 4, further comprising the following step: (g) After step (f), rotate the crucible in a predetermined direction or the opposite direction.

10. The method of claim 9, wherein, The amount of inert gas supplied to the chamber and the internal pressure of the chamber in step (g) are adjusted to be equal to the amount of inert gas supplied to the chamber and the internal pressure of the chamber in step (f).

11. The method of claim 9, wherein, The crucible is rotated at a speed of 5 rpm or faster, and the crucible is rotated for 1 hour or longer.

12. An apparatus for growing single-crystal silicon ingots, the apparatus comprising: chamber; A crucible, which is located inside a chamber and configured to contain molten silicon; A heater, which is disposed inside the chamber and placed around the crucible; A heat insulation screen is installed at the upper part of the crucible; An inert gas supplier is configured to supply inert gas to the internal region of a chamber. A temperature measuring device configured to measure the surface temperature of a molten silicon. The exhaust unit is designed to regulate the internal pressure of the chamber. A crucible rotator, configured to support and rotate a crucible; and The controller is configured to control the operation of the exhaust unit, inert gas supply, temperature measuring device, and crucible rotator. The controller is constructed as follows: Measure the temperature of different parts of the surface of the silicon melt; Determine whether a predetermined portion of the polysilicon has already melted; and Once the predetermined portion of polysilicon has been melted, the inert gas supply and exhaust unit are controlled to increase the amount of inert gas supplied to the chamber and reduce the internal pressure of the chamber. Specifically, when the low-temperature surface area of ​​the silicon melt is equal to or less than a predetermined value, the controller determines that a predetermined portion of the polycrystalline silicon has melted.

13. The device as claimed in claim 12, wherein: After the polycrystalline silicon initially packed in the crucible has melted completely, additional polycrystalline silicon is packed into the crucible; and During additional polysilicon loading, the controller controls the inert gas supply and exhaust unit to keep the internal pressure of the chamber constant and reduce the supply of inert gas.

14. The device as claimed in claim 13, wherein, After the polycrystalline silicon additionally packed in the crucible has melted, the controller controls the crucible rotator, causing the crucible to rotate at a predetermined speed in a predetermined direction or in the opposite direction.

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