A kind of single crystal silicon rod polishing device of cyclic water is drawn to lift method

Abstract

The application discloses a kind of single crystal silicon rod of direct-lift promotion method system, including polishing cooling bin, telescopic arm, corrosion-resistant sponge, high-pressure polishing water pipe, rotating wheel, support wall, circulating water liquid supplement pipe, circulating water pool, pickling solution liquid supplement pipe, pickling solution bin, protective tape, wherein telescopic arm is in the straight line of polishing cooling bin inner wall and polishing cooling bin center line, multiple telescopic arms clamp single crystal silicon rod, telescopic arm at least has three, telescopic arm clamps one end of single crystal silicon rod as arc surface, multiple telescopic arms synchronous telescopic.The beneficial effects of the application: high-pressure water polishing prevents the damage of silicon rod, polishing and pickling are arranged in the same process, energy saving and environmental protection are used, the surface shape of single crystal silicon rod is round, weak acid strong acid weak acid high-pressure water polishing, the molecular structure of protective layer on the surface of single crystal silicon rod is also evenly distributed, to ensure that the resistance distribution of single crystal silicon rod is uniform after trimming.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of single crystal silicon rod circulating water polishing, in particular to a single crystal silicon rod circulating water polishing device for Czochralski method. BACKGROUND

[0002] As an important semiconductor material, silicon single crystal has good electrical properties and thermal stability, and since it was discovered and used in the 1960s, it has replaced germanium single crystal to become the main material of semiconductor. Silicon material is the most widely used semiconductor material because of its good high-temperature resistance and radiation resistance, especially its characteristics of being suitable for manufacturing high-power devices, and most integrated circuit semiconductor devices are made of silicon material.

[0003] Among the methods for preparing silicon single crystals with good performance, the Czochralski method has relatively simple equipment and process and is easy to realize automatic control. After the single crystal silicon rod is drawn from the single crystal furnace, a series of processes need to be carried out to manufacture semiconductor devices or solar cell sheets for photovoltaic power generation.

[0004] In the existing silicon rod grinding process, the silicon rod and the grinding roller are in hard contact, which causes damage during grinding due to uneven stress, increases the rate of defective products, and increases production costs. Silicon rods need to go through a polishing process during production, which is to flatten the burrs on the silicon rod sprue, thereby facilitating subsequent processing. However, the silicon rod is very brittle and can be easily damaged during polishing, resulting in material scrap, and the current polishing device is fixed, which requires the silicon rod to rotate for polishing, making the silicon rod prone to damage during polishing and increasing economic losses. SUMMARY

[0005] Therefore, the technical problems to be solved by the present application are the damage of the silicon rod caused by polishing, the inability to arrange polishing and pickling in the same process, the uneven distribution of the molecular structure of the protective layer on the surface of the single crystal silicon rod, the uneven distribution of the resistance after the single crystal silicon rod is cut, and the large amount of water consumed by pickling.

[0006] To solve the above technical problems, the present application provides the following technical scheme: a single crystal silicon rod circulating water polishing device for Czochralski method, comprising a polishing cooling bin, a telescopic clamping arm, a corrosion-resistant sponge, a high-pressure polishing water pipe, a rotating wheel, a supporting wall, a circulating water replenishing pipe, a circulating water pool, an acid pickling solution replenishing pipe, an acid pickling solution bin and a protective belt, wherein

[0007] The telescopic clamping arm is telescopic on the straight line where the inner wall of the polishing cooling bin and the center of the polishing cooling bin are connected, a plurality of telescopic clamping arms clamp the single crystal silicon rod, the telescopic clamping arm has at least three, one end of the telescopic clamping arm clamping the single crystal silicon rod is a circular arc surface, and the plurality of telescopic clamping arms are synchronous,

[0008] Corrosion-resistant sponge is installed on the side of the telescopic clamping arm close to the polishing cooling bin, and the end of the corrosion-resistant sponge clamping single crystal silicon rod is arc-shaped,

[0009] The high-pressure polishing water pipe is opposite to one side of the single crystal silicon rod, and the rotating wheel is close to the other side of the single crystal silicon rod,

[0010] One end of the circulating water supplement pipe is inserted into the circulating water pool, the circulating water supplement pipe passes through the supporting wall, and the other end of the circulating water supplement pipe is inserted into the corresponding corrosion-resistant sponge from the left and right telescopic clamping arms,

[0011] One end of the pickling solution supplement pipe is inserted into the pickling solution bin, and the other end of the pickling solution supplement pipe is inserted into the corresponding corrosion-resistant sponge from the lower telescopic clamping arm,

[0012] The rotating wheel rotates the single crystal silicon rod to the side of the high-pressure polishing water pipe,

[0013] The protection belt is arranged on the upper side of the inner wall of the polishing cooling bin close to the side of the high-pressure polishing water pipe, the lower end of the protection belt is lower than the horizontal height of the high-pressure polishing water pipe, the protection belt is composed of a plurality of corrosion-resistant chemical fiber fine wires, the plurality of corrosion-resistant chemical fiber fine wires are fixed on one side of the protection belt arranged on the upper side of the inner wall of the polishing cooling bin, and the plurality of corrosion-resistant chemical fiber fine wires are naturally scattered on the other side.

[0014] As a preferred scheme of the single crystal silicon rod polishing device by the straight-lift method, the polishing cooling bin is provided with a splash plate, and the horizontal height of the side of the polishing cooling bin provided with the splash plate is higher than that of the side of the polishing cooling bin without the splash plate.

[0015] As a preferred scheme of the single crystal silicon rod polishing device by the straight-lift method, the polishing cooling bin is projected on the horizontal plane in the circulating water pool.

[0016] As a preferred scheme of the single crystal silicon rod polishing device by the straight-lift method, the high-pressure polishing water pipe is further provided with a high-pressure water tank.

[0017] As a preferred scheme of the single crystal silicon rod polishing device by the straight-lift method, the high-pressure polishing water pipe is further provided with a sand adding tank, one end of the high-pressure polishing water pipe is communicated with the high-pressure water tank, the sand adding tank is communicated with the high-pressure polishing water pipe at the middle section of the high-pressure polishing water pipe, and the other end of the high-pressure polishing water pipe is inserted into the polishing cooling bin.

[0018] As a preferred scheme of the single crystal silicon rod polishing device by the straight-lift method, the bottom of the circulating water pool is provided with a sedimentation tank.

[0019] As a preferred scheme of the device, the bottom surface of the circulating water pool is inclined, and the side of the circulating water pool provided with the sedimentation pool is lower than the side of the circulating water pool without the sedimentation pool.

[0020] As a preferred scheme of the device, one end of the circulating water supplement pipe is inserted into the circulating water pool, and the port of the circulating water supplement pipe in the circulating water pool is higher than the highest part of the bottom of the circulating water pool.

[0021] The device has the following advantages: the high-pressure water polishing prevents the silicon rod from being damaged, polishing and pickling are arranged in the same device to save energy and reduce emissions, the use of circulating water is energy-saving and environmentally friendly, the surface of the single crystal silicon rod is subjected to small force in the concave part and large force in the convex part, the amount of acid pickling solution squeezed out by the corrosion-resistant sponge also has a size, so that the surface of the single crystal silicon rod is more rounded, and the influence of strong acid on the inside of the concave part of the single crystal silicon rod is avoided; the circulating pickling and polishing of the weak acid, the strong acid, and the weak acid high-pressure water polishing make the molecular structure of the protective layer on the surface of the single crystal silicon rod also uniformly distributed, ensure that the resistance of the single crystal silicon rod is uniformly distributed after the edge is cut, the high-pressure water polishing inserted in the three pickling processes makes the polished surface of the single crystal silicon rod smoother, the first weak acid forms a pickling protective film on the surface of the single crystal silicon rod, and the surface of the single crystal silicon rod is protected, the convex part of the surface of the single crystal silicon rod is subjected to the influence of the first weak pickling, and the concave part is subjected to the influence of the first weak pickling, the high-pressure polishing water impacts the pickling protective film formed on the surface of the single crystal silicon rod by the first weak pickling, and the pickling degree of the convex part is higher and is more easily impacted and fallen off by the high-pressure polishing water; the first strong acid pickling is subjected to the influence of the first weak acid, and the pickling protective film formed on the surface of the single crystal silicon rod by the first weak pickling is more easily impacted and fallen off by the high-pressure polishing water, the pickling protective film formed on the surface of the single crystal silicon rod by the first weak pickling is more not easily impacted and fallen off by the high-pressure polishing water, and the thickness of the pickling protective film formed on the surface of the single crystal silicon rod by the first weak pickling is greater than that of the convex part, which is beneficial to the polishing smoothness of the surface of the single crystal silicon rod; the second weak acid pickling uniformly coats the strong acid of the first strong acid pickling and dilutes the strong acid on the surface of the single crystal silicon rod, avoids the deep influence of the strong acid on the inside of the single crystal silicon rod, especially the deep influence of the strong acid on the inside of the concave part of the single crystal silicon rod, and is beneficial to the adjustment of the polishing smoothness of the surface of the single crystal silicon rod. BRIEF DESCRIPTION OF DRAWINGS

[0022] Fig. 1The overall structure schematic diagram of the single crystal silicon rod polishing device with circulating water according to an embodiment of the present application is shown in the figure.

[0023] Fig. 2 The overall structure schematic diagram of the single crystal silicon rod polishing device with circulating water according to an embodiment of the present application is shown in the figure.

[0024] Fig. 3 The overall structure schematic diagram of the single crystal silicon rod polishing device with circulating water according to an embodiment of the present application is shown in the figure.

[0025] In the figure: the polishing cooling bin 101; the telescopic clamping arm 102; the corrosion-resistant sponge 103; the high-pressure polishing water pipe 104; the rotating wheel 105; the supporting wall 106; the circulating water supplement pipe 107; the circulating water pool 108; the pickling solution supplement pipe 109; the pickling solution bin 110; the protective belt 111; the corrosion-resistant chemical fiber fine wire 111a; the splash-proof board 101a; the high-pressure water tank 104a; the sand adding tank 104b; the sedimentation tank 108a. DETAILED DESCRIPTION

[0026] REFERENCE Figs. 1-3The embodiment provides a single crystal silicon rod polishing device for a straight pulling lifting method, which comprises a polishing cooling bin 101, a telescopic clamping arm 102, a corrosion-resistant sponge 103, a high-pressure polishing water pipe 104, a rotating wheel 105, a supporting wall 106, a circulating water supplement pipe 107, a circulating water pool 108, an acid washing solution supplement pipe 109, an acid washing solution bin 110 and a protective belt 111, wherein the telescopic clamping arm 102 is internally provided with a servo waterproof electric push rod for controlling the telescopic clamping arm 102 to stretch and retract, the telescopic clamping arm 102 stretches and retracts on a straight line formed by the inner wall of the polishing cooling bin 101 and the center of the polishing cooling bin 101, a plurality of telescopic clamping arms 102 clamp the single crystal silicon rod, the telescopic clamping arm 102 is at least three, one end of the telescopic clamping arm 102 clamping the single crystal silicon rod is a circular arc surface, the plurality of telescopic clamping arms 102 synchronously stretch and retract, the corrosion-resistant sponge 103 is installed on one side of the telescopic clamping arm 102 close to the center of the polishing cooling bin 101, one end of the corrosion-resistant sponge 103 clamping the single crystal silicon rod is a circular arc surface, the high-pressure polishing water pipe 104 is opposite to one side of the single crystal silicon rod, the rotating wheel 105 is close to the other side of the single crystal silicon rod, one end of the circulating water supplement pipe 107 is inserted into the circulating water pool 108, the circulating water supplement pipe 107 passes through the supporting wall 106, the other end of the circulating water supplement pipe 107 is inserted into the corresponding corrosion-resistant sponge 103 from the telescopic clamping arms 102 on the left and right sides, one end of the acid washing solution supplement pipe 109 is inserted into the acid washing solution bin 110, the other end of the acid washing solution supplement pipe 109 is inserted into the corresponding corrosion-resistant sponge 103 from the telescopic clamping arm 102 on the lower side, the rotating wheel 105 rotates the single crystal silicon rod to the side of the high-pressure polishing water pipe 104, the protective belt 111 is arranged on the upper side of the inner wall of the polishing cooling bin 101 close to the side of the high-pressure polishing water pipe 104, the lower end of the protective belt 111 is lower than the horizontal height of the high-pressure polishing water pipe 104, the protective belt 111 is composed of a plurality of corrosion-resistant chemical fiber fine wires 111a, the plurality of corrosion-resistant chemical fiber fine wires 111a are fixed on one side of the protective belt 111 arranged on the upper side of the inner wall of the polishing cooling bin 101, and the plurality of corrosion-resistant chemical fiber fine wires 111a are naturally scattered on the other side.

[0027] The single crystal silicon rod is placed in the polishing cooling bin 101 before the device is started, the telescopic clamping arm 102 clamps the single crystal silicon rod, the rotating wheel 105 is started after the single crystal silicon rod is installed, the rotating wheel 105 rotates the single crystal silicon rod to the side of the high-pressure polishing water pipe 104, one end of the telescopic clamping arm 102 clamping the single crystal silicon rod is a circular arc surface, one end of the corrosion-resistant sponge 103 clamping the single crystal silicon rod is a circular arc surface, the circular arc surface can reduce the friction between the single crystal silicon rod and the corrosion-resistant sponge 103, and the rotating wheel 105 causes the single crystal silicon rod to slide with the corrosion-resistant sponge 103.

[0028] The one end of the circulating water supplement pipe 107 is inserted into the circulating water pool 108, the circulating water supplement pipe 107 passes through the support wall 106, the other end of the circulating water supplement pipe 107 is inserted into the corresponding corrosion-resistant sponge 103 at the left and right side telescopic clamp arms 102, and the circulating water also flows into the acid washing solution in the process of continuous circulation. Compared with the pure acid washing solution, the circulating water is weakly acidic, and the left and right side corrosion-resistant sponges 103 absorb the circulating water to give the single crystal silicon rod surface weak acid corrosion.

[0029] The one end of the acid washing solution supplement pipe 109 is inserted into the acid washing solution warehouse 110, the other end of the acid washing solution supplement pipe 109 is inserted into the corresponding corrosion-resistant sponge 103 at the lower side telescopic clamp arm 102, and the lower side corrosion-resistant sponge 103 absorbs the acid washing solution to give the single crystal silicon rod surface strong acid corrosion.

[0030] The high-pressure polishing water pipe 104 is started after the rotation wheel 105 is started, and the high-pressure polishing water pipe 104 is closed before the rotation wheel 105 is closed. It is ensured that the single crystal silicon rod is polished by the high-pressure polishing water pipe 104 after being pickled, and it is also ensured that the single crystal silicon rod surface is not broken by the high-pressure polishing water pipe 104 after being polished.

[0031] Because the rotation wheel 105 rotates the single crystal silicon rod to one side of the high-pressure polishing water pipe 104 in one direction, the single crystal silicon rod is given three times of acid washing by the corrosion-resistant sponge 103, in turn, the first weak acid pickling, the first strong acid pickling, and the second weak acid pickling. The end of the single crystal silicon rod clamped by the corrosion-resistant sponge 103 is a circular arc surface, so that the force on the concave part of the single crystal silicon rod surface is small, and the force on the convex part is large. The amount of acid washing solution squeezed out by the corrosion-resistant sponge 103 naturally has a size according to the force.

[0032] The total process of inserting the high-pressure water polishing in the three times of acid washing is as follows:

[0033] The one end of the circulating water supplement pipe 107 is inserted into the circulating water pool 108, the circulating water supplement pipe 107 passes through the support wall 106, the other end of the circulating water supplement pipe 107 is inserted into the corresponding corrosion-resistant sponge 103 at the left and right side telescopic clamp arms 102, and the circulating water also flows into the acid washing solution in the process of continuous circulation. Compared with the pure acid washing solution, the circulating water is weakly acidic, and the left and right side corrosion-resistant sponges 103 absorb the circulating water to give the single crystal silicon rod surface weak acid corrosion, wherein the corrosion-resistant sponge 103 on one side is tightly attached to the single crystal silicon rod, the first weak acid makes the single crystal silicon rod surface initially form an acid washing protective film, and also protects the single crystal silicon rod surface, so that the convex part of the single crystal silicon rod surface strengthens the influence of the first weak acid pickling, and the concave part weakens the influence of the first weak acid.

[0034] The acid pickling protective film is lower in surface hardness than the single crystal silicon rod, and the high-pressure polishing water released in the high-pressure polishing water pipe 104 impacts the acid pickling protective film initially formed on the surface of the single crystal silicon rod by the first weak acid pickling, the force on the concave part of the single crystal silicon rod surface is small, the force on the convex part is large, the amount of acid pickling solution squeezed out by the corrosion-resistant sponge 103 also varies according to the force, and the acid pickling degree of the convex part is higher, which is more easily impacted and fallen off by the high-pressure polishing water released in the high-pressure polishing water pipe 104;

[0035] The acid pickling solution supplement pipe 109 is inserted into the acid pickling solution tank 110 at one end, and the other end of the acid pickling solution supplement pipe 109 is inserted into the corresponding corrosion-resistant sponge 103 from the lower side at the telescopic clamp arm 102, the corrosion-resistant sponge 103 is in close contact with the surface of the single crystal silicon rod, and the first strong acid pickling gives the surface of the single crystal silicon rod strong acid corrosion due to the absorption of the acid pickling solution by the corrosion-resistant sponge 103. The strong acid pickling solution will discharge more strong acid pickling solution on the convex part of the single crystal silicon rod surface, which will strengthen the acid pickling degree of the convex part of the single crystal silicon rod and weaken the acid pickling degree of the concave part of the single crystal silicon rod. In the process of the first strong acid pickling, the first weak acid initially forms an acid pickling protective film on the surface of the single crystal silicon rod, and the acid pickling protective film generated by the first weak acid pickling on the convex part of the single crystal silicon rod is more easily impacted and fallen off by the high-pressure polishing water released in the high-pressure polishing water pipe 104. The acid pickling protective film generated by the first weak acid pickling on the concave part is more difficult to be impacted and fallen off by the high-pressure polishing water released in the high-pressure polishing water pipe 104. After the high-pressure polishing water impacts the surface of the single crystal silicon rod, the thickness of the acid pickling protective film generated by the first weak acid pickling on the concave part is greater than that of the acid pickling protective film generated by the first weak acid pickling on the convex part before the first strong acid pickling. The degree of the first strong acid pickling on the convex part is greater than that on the concave part, which is conducive to polishing the smoothness of the surface of the single crystal silicon rod;

[0036] The circulating water supplement pipe 107 is inserted into the circulating water tank 108 at one end, and the other end of the circulating water supplement pipe 107 is inserted into the corresponding corrosion-resistant sponge 103 from the left and right telescopic clamp arms 102. The circulating water also has acid pickling solution flowing in during the continuous circulation process. The left and right corrosion-resistant sponges 103 absorb the weak acid corrosion of the single crystal silicon rod surface by the circulating water, and the other side of the corrosion-resistant sponge 103 is in close contact with the single crystal silicon rod. The second weak acid pickling makes the strong acid of the first strong acid pickling more evenly distributed and also dilutes the strong acid on the surface of the single crystal silicon rod, which avoids the deep influence of the strong acid on the inside of the single crystal silicon rod, especially the inside of the concave part of the single crystal silicon rod, which is conducive to adjusting the smoothness of the surface of the single crystal silicon rod;

[0037] Then the single crystal silicon rod is rotated to the side of the high-pressure polishing water pipe 104, and the single crystal silicon rod surface that has been acid washed three times is brittle due to the acid washing. Because the single crystal silicon rod surface is uneven and the protruding part is more strongly acid washed and more brittle, the high-pressure polishing water pipe 104 polishes the single crystal silicon rod surface to be flat. This is repeated until the single crystal silicon rod surface is smooth, and in this process, the single crystal silicon rod surface debris falls into the circulating water pool 108.

[0038] Three times of acid washing and one time of polishing not only make the single crystal silicon rod surface smooth, but also make the molecular structure of the protective layer on the single crystal silicon rod surface uniform, ensuring that the resistance distribution of the single crystal silicon rod after cutting is uniform.

[0039] The protective belt 111 is arranged on the inner wall of the polishing cooling bin 101 on the side close to the high-pressure polishing water pipe 104, and the lower end of the protective belt 111 is lower than the horizontal height of the high-pressure polishing water pipe 104. The protective belt 111 is composed of a plurality of corrosion-resistant chemical fiber fine wires 111a, which are fixed on one side of the protective belt 111 arranged on the inner wall of the polishing cooling bin 101, and naturally spread on the other side.

[0040] After being impacted by the water flow in the high-pressure polishing water pipe 104, the plurality of corrosion-resistant chemical fiber fine wires 111a will automatically slide to the concave part of the single crystal silicon rod surface and make the protruding part of the single crystal silicon rod surface leak out. The protective belt 111 not only protects the concave part of the single crystal silicon rod surface, but also enhances the polishing of the protruding part of the single crystal silicon rod surface.

[0041] A splash plate 101a is arranged on one side of the polishing cooling bin 101, and the horizontal height of the side of the polishing cooling bin 101 where the splash plate 101a is arranged is higher than the side of the polishing cooling bin 101 where the splash plate 101a is not arranged.

[0042] The polishing cooling bin 101 is projected on the horizontal plane and located in the circulating water pool 108.

[0043] It is ensured that the acid washing liquid and the circulating water can flow into the circulating water pool 108, and the splash plate 101a prevents liquid from splashing out.

[0044] The high-pressure polishing water pipe 104 is also provided with a high-pressure water tank 104a.

[0045] The high-pressure polishing water pipe 104 is also provided with a sand adding tank 104b, one end of the high-pressure polishing water pipe 104 is communicated with the high-pressure water tank 104a, the sand adding tank 104b is communicated with the high-pressure polishing water pipe 104 at the middle segment, and the other end of the high-pressure polishing water pipe 104 is inserted into the polishing cooling bin 101.

[0046] The water flows from the high-pressure water tank 104a, and the polishing sand in the sand tank 104b is carried to the polishing cooling bin 101, the polishing effect of the high-pressure polishing pipe 104 is enhanced, and the surface of the single crystal silicon rod is cleaned and pickled.

[0047] The bottom of the circulating water tank 108 is provided with a sedimentation tank 108a. The sedimentation tank 108a is used to deposit the polishing sand in the sand tank 104b and the falling objects on the surface of the single crystal silicon rod.

[0048] The bottom surface of the circulating water tank 108 is inclined, and the side of the circulating water tank 108 provided with the sedimentation tank 108a is lower than the side of the circulating water tank 108 without the sedimentation tank 108a. The deposition of the sedimentation tank 108a is accelerated, and the sedimentation tank 108a can be cleaned in time after the device is started.

[0049] The port of the circulating water supplement pipe 107 can be provided with a replaceable filter screen to prevent the circulating water supplement pipe 107 from sucking in impurities and being blocked.

[0050] One end of the circulating water supplement pipe 107 is inserted into the circulating water tank 108, and the port of the circulating water supplement pipe 107 in the circulating water tank 108 is higher than the highest part of the bottom of the circulating water tank 108 to prevent the circulating water supplement pipe 107 from sucking in impurities and being blocked.

Claims

1. A circulating water polishing device for producing single-crystal silicon rods using the Czochralski method, characterized in that: The components include a grinding cooling chamber (101), a telescopic clamping arm (102), a corrosion-resistant sponge (103), a high-pressure grinding water pipe (104), a rotating wheel (105), a support wall (106), a circulating water replenishment pipe (107), a circulating water tank (108), an acid pickling solution replenishment pipe (109), an acid pickling solution tank (110), and a protective belt (111). The telescopic clamping arms (102) extend and retract along the straight line connecting the inner wall of the grinding cooling chamber (101) and the center of the grinding cooling chamber (101). Multiple telescopic clamping arms (102) clamp the monocrystalline silicon rod. There are at least three telescopic clamping arms (102). One end of the telescopic clamping arm (102) clamping the monocrystalline silicon rod is an arc surface. Multiple telescopic clamping arms (102) extend and retract synchronously. The corrosion-resistant sponge (103) is installed on the side of the telescopic clamping arm (102) near the center of the grinding cooling chamber (101). The end of the corrosion-resistant sponge (103) that clamps the single crystal silicon rod has a rounded surface. The high-pressure polishing water pipe (104) faces one side of the monocrystalline silicon rod, and the rotating wheel (105) is close to the other side of the monocrystalline silicon rod. One end of the circulating water replenishment pipe (107) is inserted into the circulating water tank (108), and the circulating water replenishment pipe (107) passes through the support wall (106). The other end of the circulating water replenishment pipe (107) is inserted into the corresponding corrosion-resistant sponge (103) from the telescopic clamps (102) on the left and right sides. One end of the pickling solution replenishment tube (109) is inserted into the pickling solution tank (110), and the other end of the pickling solution replenishment tube (109) is inserted into the corresponding corrosion-resistant sponge (103) from the lower telescopic clamp arm (102). The rotating wheel (105) rotates the single-crystal silicon rod toward the high-pressure polishing water pipe (104). The protective strip (111) is set on the upper side of the inner wall of the grinding cooling chamber (101) near the high-pressure grinding water pipe (104). The lower end of the protective strip (111) is at a lower horizontal height than the high-pressure grinding water pipe (104). The protective strip (111) is composed of multiple corrosion-resistant chemical fiber threads (111a). The multiple corrosion-resistant chemical fiber threads (111a) are fixed on the upper side of the inner wall of the grinding cooling chamber (101) where the protective strip (111) is set, and the multiple corrosion-resistant chemical fiber threads (111a) spread out naturally on the other side.

2. The circulating water polishing device for producing single-crystal silicon rods by the Czochralski method according to claim 1, characterized in that: A splash guard (101a) is provided on one side of the grinding cooling chamber (101). The horizontal height of the side of the grinding cooling chamber (101) with the splash guard (101a) is higher than the side of the grinding cooling chamber (101) without the splash guard (101a).

3. The circulating water polishing device for producing single-crystal silicon rods by the Czochralski method according to claim 2, characterized in that: The projection of the grinding cooling chamber (101) on the horizontal plane is located within the circulating water tank (108).

4. The circulating water polishing device for producing single-crystal silicon rods by the Czochralski method according to claim 3, characterized in that: The high-pressure grinding water pipe (104) is also equipped with a high-pressure water tank (104a).

5. The circulating water polishing device for producing single-crystal silicon rods by the Czochralski method according to claim 4, characterized in that: The high-pressure grinding water pipe (104) is also equipped with a sand tank (104b). One end of the high-pressure grinding water pipe (104) is connected to the high-pressure water tank (104a), and the sand tank (104b) is connected to it in the middle section of the high-pressure grinding water pipe (104). The other end of the high-pressure grinding water pipe (104) is inserted into the grinding cooling chamber (101).

6. The circulating water polishing device for producing single-crystal silicon rods by the Czochralski method according to claim 5, characterized in that: A sedimentation tank (108a) is provided at the bottom of the circulating water tank (108).

7. The circulating water polishing device for producing single-crystal silicon rods by the Czochralski method according to claim 6, characterized in that: The bottom of the circulating water tank (108) is inclined, and the side of the circulating water tank (108) with a sedimentation tank (108a) is lower than the side of the circulating water tank (108) without a sedimentation tank (108a).

8. The circulating water polishing device for producing single-crystal silicon rods by the Czochralski method according to claim 7, characterized in that: One end of the circulating water replenishment pipe (107) is inserted into the circulating water tank (108), and the port of the circulating water replenishment pipe (107) inside the circulating water tank (108) is higher than the highest point of the bottom of the circulating water tank (108).

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