A silicon-based five-channel absorber

Abstract

The application provides a silicon-based five-channel absorber, which comprises a full-metal reflection layer and a dielectric layer arranged on the full-metal reflection layer in a periodic arrangement; a ring-shaped cavity is etched on the surface of the dielectric layer, and the absorption performance of the absorber is regulated by changing the depth, inner diameter or outer diameter of the ring-shaped cavity. The silicon-based five-channel absorber provided by the application is provided with a ring-shaped cavity, the same absorption curve can be obtained for TE waves and TM waves, and the polarization insensitivity of the absorber is ensured; meanwhile, the periodic ring-shaped cavity can excite different resonance modes inside and outside the ring, the adjustable double-frequency absorption can be realized in the near-infrared wave, the absorption effect of up to five channels can be realized, and the absorption rate can all reach more than 90%; the dielectric silicon is adopted instead of the traditional metal, the problem of excessive ohmic loss of the traditional metal layer can be avoided, the absorption rate is improved, and the absorption is achieved.

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