Coating treatment device, coating treatment method, and computer storage medium

Abstract

The present invention is a coating treatment device for coating a periphery of a substrate with a coating liquid, which includes: a holding rotation unit that holds and rotates a substrate; a coating liquid supply nozzle that supplies a coating liquid to the periphery of the substrate held by the holding rotation unit; a moving mechanism that moves the coating liquid supply nozzle; and a control unit that controls the holding rotation unit, the coating liquid supply nozzle, and the moving mechanism, the control unit being configured to be capable of performing the following control: while rotating the holding rotation unit that holds the substrate, the moving mechanism is controlled to move the coating liquid supply nozzle from outside the periphery of the substrate to a prescribed position on the periphery of the substrate at a first speed while supplying the coating liquid with the coating liquid supply nozzle, and thereafter, the moving mechanism is controlled to move the coating liquid supply nozzle from the prescribed position to outside the periphery of the substrate at a second speed higher than the first speed while supplying the coating liquid with the coating liquid supply nozzle.

Description

Technical Field

[0001] This invention relates to a coating treatment apparatus, a coating treatment method, and a computer storage medium. Background Technology

[0002] The process of applying a coating solution to the periphery of a substrate such as a semiconductor wafer (hereinafter, sometimes simply referred to as a wafer) has been carried out for a long time.

[0003] Regarding this, Patent Document 1 describes a peripheral coating apparatus, which includes: a rotating holding part that horizontally holds a circular substrate and rotates it; a nozzle that supplies coating liquid to form a coating film on the peripheral portion of the surface of the substrate; a moving mechanism that moves the nozzle so that the supply position of the coating liquid moves between the peripheral portion of the substrate and the outer side of the substrate; and a control part that outputs a control signal to control the rotation of the substrate using the rotating holding part, the release of coating liquid from the nozzle, and the movement of the nozzle using the moving mechanism. Furthermore, the aforementioned control unit outputs a control signal to cause the substrate to rotate and the coating liquid to be supplied from the nozzle while the supply position of the coating liquid is moved from the outside of the substrate toward the periphery of the substrate, so that the coating liquid is applied to form a wedge shape with an angle of less than 10° when the substrate is viewed from above. Then, while the substrate is continuously rotated and the coating liquid is supplied, the movement of the nozzle is stopped, and the coating liquid is applied in a strip along the periphery of the substrate. The end of the strip of coating liquid contacts the wedge-shaped coating liquid, and the coating liquid is applied to the entire circumference of the substrate.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2013-62436 Summary of the Invention

[0007] The technical problem that the invention aims to solve

[0008] The technology of this invention forms a coating film with high precision on the side surface of the peripheral portion of the substrate.

[0009] Technical solutions for solving technical problems

[0010] One aspect of the present invention is a coating processing apparatus for applying a coating liquid to the periphery of a substrate, comprising: a holding and rotating unit for holding and rotating the substrate; a coating liquid supply nozzle for supplying coating liquid to the periphery of the substrate held by the holding and rotating unit; a moving mechanism for moving the coating liquid supply nozzle; and a control unit for controlling the holding and rotating unit, the coating liquid supply nozzle, and the moving mechanism, wherein the control unit is configured to perform the following control: while rotating the holding and rotating unit holding the substrate, supplying coating liquid using the coating liquid supply nozzle, and controlling the moving mechanism to move the coating liquid supply nozzle from the outer periphery of the substrate to a predetermined position on the periphery of the substrate at a first speed; and then, while supplying coating liquid using the coating liquid supply nozzle, controlling the moving mechanism to move the coating liquid supply nozzle from the predetermined position to the outer periphery of the substrate at a second speed higher than the first speed.

[0011] Invention Effects

[0012] According to the present invention, a coating film can be formed with high precision on the side surface of the peripheral portion of the substrate. Attached Figure Description

[0013] Figure 1 This is an explanatory diagram showing the formation state of the protective film at the periphery of the wafer.

[0014] Figure 2 This is an explanatory diagram showing the state in which a protective liquid is attached to the inner surface of a cup-shaped part.

[0015] Figure 3 This is an explanatory diagram showing a side cross-section of the outline structure of the coating treatment apparatus according to an embodiment.

[0016] Figure 4 This is an explanatory diagram showing a top view schematically illustrating the outline structure of the coating treatment apparatus according to the embodiment.

[0017] Figure 5 This is an explanatory diagram showing the movement of the nozzle using the coating treatment method of the embodiment.

[0018] Figure 6 This is an illustration showing the spraying of resist liquid as the nozzle sweeps out of the wafer.

[0019] Figure 7 This is an explanatory diagram showing the state of the protective film formed on the lower side of the periphery of the wafer.

[0020] Figure 8 This is an explanatory diagram showing a state where a protective film is formed only on the upper side of the periphery of the wafer. Detailed Implementation

[0021] In the manufacturing process of semiconductor devices, a series of photolithography steps are performed, including a resist coating process that supplies a resist solution to a wafer to form a resist film, thereby forming a predetermined resist pattern on the wafer. This series of processes is performed in a coating and developing system that includes various liquid processing apparatuses, heat treatment apparatuses, and wafer transport apparatuses. Furthermore, sometimes after the photolithography steps are completed, the wafer undergoes etching or other processes, and the photolithography steps are repeated.

[0022] In such a process, to protect the periphery of the wafer during the aforementioned etching process, a coating process is sometimes performed to form a protective film on the periphery. Based on Figure 1 To illustrate in detail, as shown in the figure, the periphery of the wafer W is divided into a region Z1 that is generally flat on the upper surface, a region Z2 that is a continuous slope starting from region Z1, a region Z3 that is a continuous vertical side end face (peripheral side end face) starting from region Z2, a region Z4 that is a continuous slope starting from region Z3, and a region Z5 that is a continuous flat on the lower surface starting from region Z4.

[0023] Furthermore, a protective film P is formed for regions Z1, Z2, and Z3, which are susceptible to damage from the etchant because no resist pattern was formed during the etching process. For example, a resist film formed from a resist solution can be used as the protective film P.

[0024] Such peripheral coating processing has traditionally been performed by peripheral coating processing equipment. Specifically, while rotating the wafer using a rotating chuck or similar device, the coating process involves... Figure 2 The protective liquid supply nozzle N, as shown, releases protective liquid while moving from the outer periphery of the wafer W towards the center of the wafer W, stopping at the end of the coating area on the center side of the wafer W, and then again moves the protective liquid supply nozzle N away from the outer periphery of the wafer W. Thus, as... Figure 1 As shown, a protective film P is formed in regions Z1, Z2, and Z3 at the periphery of the wafer W.

[0025] Furthermore, for region Z3, in order to form a protective film P in the desired area, such as 60% to 80% of the area from the top, a process is performed to maintain the rotational speed of the rotating part, such as adjusting the rotary chuck.

[0026] However, it is known that although a rotating part such as a rotary chuck is provided on the outside of the rotating part, Figure 2 As shown in the cup-shaped component C, when a protective film is formed in the desired area of ​​region Z3 as described above, if the rotating part is rotated at high speed, the protective liquid will be scattered to the bottom part of the cup-shaped component C (especially the inner surface of the block provided in the bottom part of the cup-shaped component C, which will be described later), and dirt D formed by the protective liquid will adhere to the inner surface of the bottom part of the cup-shaped component C.

[0027] Therefore, the technology of the present invention, when applying a coating liquid to the periphery of a substrate such as a wafer, suppresses the adhesion of the protective liquid to the inner surface of the cup-shaped part, and forms a protective film with high precision on the side of the periphery.

[0028] Hereinafter, this embodiment will be described with reference to the accompanying drawings. Furthermore, in this specification, elements having substantially the same functional configuration are labeled with the same reference numerals, thereby omitting redundant descriptions.

[0029] Figure 3 This is a schematic view of a longitudinal cross-section of the coating treatment apparatus 1 according to the embodiment. Figure 4 This is a schematic top view of the coating processing apparatus 1. The coating processing apparatus 1 is configured to form a protective film by applying a protective liquid, such as a photoresist, to the periphery of a wafer W. The coating processing apparatus 1 includes a rotary chuck 10 as a holding and rotating unit. The rotary chuck 10 is configured to horizontally hold, for example, a circular substrate, i.e., a wafer W, with a diameter of 300 mm, by vacuum suction. The rotary chuck 10 is connected to a rotary drive unit 11, including a motor, etc. The rotary drive unit 11 rotates the rotary chuck 10 about the vertical direction at a rotational speed corresponding to a control signal output from the control unit 100 described later.

[0030] The wafer W is transferred to and from the rotary chuck 10 by the raising and lowering of three support pins 12 (only two are shown in the figure for ease of illustration) supporting the back of the wafer W. The support pins 12 are mounted on the base 13, which is freely raised and lowered by the drive of the lifting mechanism 14.

[0031] A guide ring 20 with a mountain-shaped cross-section is provided on the lower side of the rotary chuck 10, and an annular outer peripheral wall 21 extending downward is provided on the outer periphery of the guide ring 20. Furthermore, a cup-shaped member 22 is arranged to surround the rotary chuck 10 and the guide ring 20. That is, the upper surface of the cup-shaped member 22 is circularly open, and it has a shape that surrounds the wafer W held by the rotary chuck 10. In addition, a cylindrical block 22a is provided on the inner edge of the top of the cup-shaped member 22. The block 22a has the function of suppressing the outward release of mist from the cup-shaped member 22 and properly guiding the downward flow into the cup-shaped member 22.

[0032] As described above, the cup-shaped member 22 has an opening on its upper side, allowing the wafer W to be transferred to the rotary chuck 10. A gap 23 forming a discharge path is formed between the inner peripheral surface of the cup-shaped member 22 and the outer peripheral wall 21 of the guide ring 20. An exhaust pipe 24 extending upward from the bottom 22b of the cup-shaped member 22 is provided. Furthermore, a drain port 25 is provided at the bottom 22b of the cup-shaped member 22.

[0033] The coating treatment apparatus 1 includes a nozzle 30, which serves as a coating liquid supply nozzle for supplying a protective liquid (coating liquid). A release port 30a is formed on the lower end face of the nozzle 30. The nozzle 30 is connected to a resist liquid supply source 32 storing resist liquid via a resist liquid supply pipe 31. The resist liquid supply source 32 includes a pump that pressurizes the resist liquid towards the nozzle 30, and the pressurized resist liquid is released from the release port 30a. A supply device assembly 33, including a valve and a flow regulating unit, is provided in the resist liquid supply pipe 31 to control the supply, stop, and amount of resist liquid supplied to the nozzle 30 based on a control signal output from the control unit 100.

[0034] like Figure 4 As shown, the nozzle 30 is supported by an arm 41 extending in the horizontal direction. Additionally, for ease of illustration, in... Figure 3 In the middle, the nozzle 30 is supported in the vertical direction, but in reality as described later. Figure 5 Thus, when viewed from above, the nozzles 30 are tilted at a predetermined angle (e.g., about 30 degrees) relative to the tangential direction of the wafer W, facing outwards from the wafer W. Furthermore, they are not perpendicular to the horizontal plane of the wafer W, but are tilted at a predetermined angle (e.g., about 30 degrees). The arrangement angle of these nozzles 30 can be set within any range.

[0035] The nozzle 30 is connected to the moving mechanism 42 via the arm 41. The moving mechanism 42 can move along the guide rail 43 extending laterally and raise and lower the arm 41. Furthermore, the moving mechanism 42 moves according to control signals from the control unit 100, and through the movement of the moving mechanism 42, the nozzle 30 can move between the standby position 44 located outside the cup-shaped member 22 and the periphery of the wafer W. In addition, the moving distance, moving speed, and moving direction of the moving mechanism 42 are also controlled by control signals from the control unit 100.

[0036] As described above, the coating processing apparatus 1 with the above structure is controlled by the control unit 100. The control unit 100 is, for example, a computer including a CPU, memory, etc., and has a program storage unit (not shown). The program storage unit stores programs that control various processes in the coating processing apparatus 1. In addition, this program can be recorded in a computer-readable storage medium H and loaded from the storage medium to the control unit 100. The storage medium H can be temporary or non-temporary.

[0037] Next, an example of the coating process method using the coating processing apparatus 1 with the above structure will be described. First, when the wafer W is held on the rotary chuck 10, the wafer W is rotated using the rotary drive unit 11. Then, the nozzle 30 is driven from the above-described... Figure 3 The standby position 44 shown moves toward the center of the chip W, as indicated. Figure 5As shown in (a), the release of resist begins at a position between the inner side of the cup-shaped member 22 and the outer periphery of the wafer W, more specifically, between the inner circumferential surface of the cup-shaped member 22 and the outer end of the wafer W. In this state, it moves at a first speed (e.g., 1 to 10 mm / sec) to a predetermined position (sweep-in) at the periphery of the wafer W. Here, the predetermined position is one where the desired radial width of the protective film to be formed by the resist can be achieved. The width of this protective film is set according to the characteristics and properties of the protective film to be formed and the type of subsequent etching process, for example, approximately 1 to 5 mm.

[0038] Next, as Figure 5 As shown in (b), the nozzle 30 stops after reaching a predetermined position. Then, while the wafer W rotates, for example, 1 to 5 revolutions in this state, resist liquid is continuously released from the nozzle 30. As a result, a protective film P formed by the resist liquid at the periphery of the wafer W is formed with the aforementioned width.

[0039] Next, as Figure 5 As shown in (c), the nozzle 30 is driven at a second speed higher than the first speed described above, for example, a speed exceeding 50 mm / sec, preferably 80 to 200 mm / sec, from... Figure 5 The nozzle (b) is moved to the outer periphery of the wafer W (sweep). After that, the release of the resist solution is stopped, and then the nozzle 30 is moved to the standby position 44.

[0040] In this way, by releasing the resist solution to the periphery of the wafer W, such as Figure 1 As shown, a protective film P is formed in regions Z1, Z2, and Z3 at the periphery of the wafer W. Furthermore, it can be confirmed that the previously observed [film / film] does not produce [the desired effect]. Figure 2 The dirt D is attached to the inner surface of the cup-shaped part C as shown. More specifically, it can be confirmed that the protective liquid will not splash onto the inner circumferential surface of the block 22a and thus generate dirt D on the inner circumferential surface of the block 22a.

[0041] Regarding the issue of resist adhering to the block 22a and causing contamination D, the resist may spill over the block 22a and onto the outer surface of the cup-shaped member 22. Furthermore, resist PL spilled onto the inner peripheral surface of the block 22a may collide with that surface and bounce back onto the wafer W, adhering to areas where no resist was applied. Therefore, as resist deposits on the inner peripheral surface of the block 22a, the risk of such rebound increases. On the other hand, while the inner surface of the cup-shaped member 22 can be cleaned using solvents or other cleaning solutions, cleaning the block 22a itself is difficult. Therefore, suppressing or preventing the resist from spilling onto the inner peripheral surface of the block 22a can solve these problems.

[0042] After conducting various experimental investigations, the inventors discovered that, in the past, the nozzle 30 moved at the same speed when it reached the designated position (during scanning) and when it moved from the designated position to the outer periphery of the wafer W (during scanning). Furthermore, when the nozzle 30 moved to the designated position (during scanning), no protective liquid adhered to the inner surface of the cup-shaped member 22, but when the nozzle 30 moved from the designated position to the outer periphery of the wafer W (during scanning), a protective liquid adhered to the inner surface of the cup-shaped member 22.

[0043] Furthermore, the reasons for the protective liquid adhering to the inner surface of the cup-shaped part C and the inner circumferential surface of the block 22a were investigated, and it was confirmed that the protective liquid adhered to the inner surface of the cup-shaped part C because, as Figure 6 As shown, with a protective film P already formed on the upper surface of the periphery of the wafer W, resist liquid PL is further released from above. The released resist liquid PL collides with the not-completely-dried protective film P, causing the resist liquid PL to violently scatter. Therefore, if the time for the resist liquid PL to scatter due to such collision is minimized, the amount of protective liquid scattering and adhering to the inner surface of the cup-shaped member 22 and the inner peripheral surface of the block 22a can be suppressed to the same extent.

[0044] Therefore, as described in the above embodiment, by making the speed at which the nozzle 30 is swept out higher than the speed at which the nozzle 30 is swept out, the time for the released resist liquid PL to collide with the incompletely dried protective film P can be shortened. As a result, it is possible to suppress the spread of the resist liquid PL from adhering to the inner surface of the cup-shaped member 22, especially the inner circumferential surface of the block 22a.

[0045] In addition, such as Figure 1 As shown, a protective film P needs to be formed in regions Z1, Z2, and Z3 of the periphery of the wafer W. Furthermore, the formation area in region Z3 preferably covers 60-80% of the area from the top. Moreover, the control of this formation area is achieved by adjusting the rotational speed of the wafer W during the release of the resist liquid as a protective solution from the nozzle 30.

[0046] For example, when the rotational speed of the wafer W is too low, such as Figure 7 As shown, the protective film P extends not only to region Z3 but also to region Z4, hindering subsequent transport and processing. On the other hand, when the rotational speed of the wafer W is too high, such as... Figure 8 As shown, the protective film P may not be able to reach region Z3, and may only cover regions Z1 and Z2, thus failing to achieve the original purpose of the protective film P, namely, to protect region Z3 during the etching process.

[0047] Therefore, while controlling the rotational speed of the wafer W during protective fluid release is important, if only the rotational speed of the wafer W is controlled, as mentioned above, the resist solution PL scattered during sweeping may adhere to the inner surface of the cup-shaped member 22 and the inner peripheral surface of the block 22a. Therefore, while arbitrarily controlling the rotational speed of the wafer W during protective fluid release, it is extremely difficult to suppress the adhesion of such resist solution PL to the inner surface of the cup-shaped member 22, especially the inner peripheral surface of the block 22a.

[0048] As stated above, in the technology of this invention, by making the speed at which the nozzle 30 sweeps out higher than its speed at which it sweeps in, it is possible to suppress the adhesion of the protective liquid to the inner surface of the cup-shaped member 22, especially the inner peripheral surface of the block 22a. Therefore, it is possible to focus only on controlling the formation region of the protective film P in region Z3, and arbitrarily control the rotation speed of the wafer W. Thus, the technology of this invention can form a coating film with high precision on the side surface of the peripheral portion of the substrate, and can suppress the adhesion of the resist liquid PL to the inner surface of the cup-shaped member, especially the inner peripheral surface of the block 22a.

[0049] According to the inventors, by maintaining the rotational speed of the wafer W at 500 rpm or more, preferably 800 rpm to 2000 rpm, in conjunction with the moving speed of the nozzle 30 when it sweeps out, it is possible to ensure that the formation area of ​​the protective film P in the peripheral region Z3 of the wafer W is within the range of 60 to 80%, and to appropriately suppress the adhesion of the resist liquid PL, which is a protective liquid, to the inner surface of the cup-shaped member 22.

[0050] It should be considered that the embodiments disclosed herein are illustrative and not restrictive in all respects. The above embodiments can be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

[0051] Explanation of reference numerals in the attached figures

[0052] 1. Coating treatment device

[0053] 10 Rotary Chuck

[0054] 11 Rotary drive unit

[0055] 12 Support pins

[0056] 13. Base

[0057] 14 Lifting mechanism

[0058] 20 Guide ring

[0059] 21. Peripheral wall

[0060] 22 cup-shaped pieces

[0061] 22a Block

[0062] 23 gap

[0063] 24 Exhaust pipe

[0064] 25 drain port

[0065] 30 nozzles

[0066] 30a Release port

[0067] 31 Corrosion resist liquid supply pipe

[0068] 32. Anti-corrosion solution supply source

[0069] 33 Supply Equipment Group

[0070] 41 arms

[0071] 42. Mobile mechanism

[0072] 43 guide rails

[0073] 100 Control Department

[0074] H storage medium

[0075] P protective film

[0076] PL resist solution

[0077] W chip

[0078] Z1 to Z5 regions.

Claims

1. A coating treatment apparatus for applying a coating liquid to the periphery of a substrate, characterized in that, include: A rotating part that holds the substrate and allows it to rotate; The coating liquid supply nozzle supplies coating liquid to the periphery of the substrate held by the rotating part; A moving mechanism for moving the application liquid supply nozzle; and The control unit controls the rotating holding part, the application liquid supply nozzle, and the moving mechanism. The control unit is configured to perform the following controls: While rotating the retaining rotating part that holds the substrate, While supplying the coating solution using the coating solution supply nozzle, the moving mechanism is controlled to move the coating solution supply nozzle from the outer periphery of the substrate to a predetermined position on the periphery of the substrate at a first speed. Then, while supplying the coating liquid using the coating liquid supply nozzle, the moving mechanism is controlled to move the coating liquid supply nozzle from the predetermined position to the outer periphery of the substrate at a second speed higher than the first speed.

2. The coating treatment apparatus according to claim 1, characterized in that: The second speed is a speed exceeding 50 mm / sec.

3. The coating treatment apparatus according to claim 1, characterized in that: The rotational speed of the retaining rotating part is 500 rpm or more.

4. The coating treatment apparatus according to claim 1, characterized in that: The second speed is a speed exceeding 50 mm / sec, and the rotational speed of the retaining rotating part is 500 rpm or more.

5. The coating treatment apparatus according to claim 4, characterized in that: The rotational speed of the retaining rotating part is 800 rpm to 2000 rpm.

6. A coating treatment method for applying a coating liquid to the periphery of a substrate, characterized in that: While rotating the substrate While supplying coating liquid through the coating liquid supply nozzle, the coating liquid supply nozzle is moved at a first speed from the outer periphery of the substrate to a predetermined position on the periphery of the substrate. Then, while supplying the coating liquid using the coating liquid supply nozzle, the coating liquid supply nozzle is moved from the predetermined position to the outer periphery of the substrate at a second speed higher than the first speed.

7. The coating treatment method according to claim 6, characterized in that: The second speed is a speed exceeding 50 mm / sec.

8. The coating treatment method according to claim 6, characterized in that: The substrate rotates at a speed of 500 rpm or higher.

9. The coating treatment method according to claim 6, characterized in that: The second speed is a speed exceeding 50 mm / sec, and the rotational speed of the substrate is above 500 rpm.

10. The coating treatment method according to claim 9, characterized in that: The substrate rotates at a speed of 800 rpm to 2000 rpm.

11. A readable computer storage medium, characterized in that: The computer storage medium stores a program that runs on a computer, which serves as a control unit for the coating process apparatus, to cause the coating process apparatus to perform a coating process method of applying a coating liquid to the periphery of a substrate. The coating treatment apparatus includes: A retaining and rotating part that holds the substrate and rotates it; A coating liquid supply nozzle supplies coating liquid to the periphery of the substrate held by the rotating retainer; and The moving mechanism that moves the application liquid supply nozzle In the coating treatment method described above While rotating the substrate While supplying coating liquid using the coating liquid supply nozzle, the coating liquid supply nozzle is moved at a first speed from the outer periphery of the substrate to a predetermined position on the periphery of the substrate. Then, while supplying the coating liquid using the coating liquid supply nozzle, the coating liquid supply nozzle is moved from the predetermined position to the outer periphery of the substrate at a second speed higher than the first speed.

12. The computer storage medium according to claim 11, characterized in that: The second speed is a speed exceeding 50 mm / sec.

13. The computer storage medium according to claim 11, characterized in that: The substrate rotates at a speed of 500 rpm or higher.

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