A semiconductor discrete device and a test method thereof
By forming capacitor structures on discrete semiconductor devices, measuring capacitance values, and calculating average capacitance values to determine abnormal dielectric layer thickness, the problem of uneven dielectric layer thickness is solved, production efficiency is improved, and costs are reduced.
CN116741651BActive Publication Date: 2026-06-02SIEN (QINGDAO) INTEGRATED CIRCUITS CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SIEN (QINGDAO) INTEGRATED CIRCUITS CO LTD
- Filing Date
- 2022-03-03
- Publication Date
- 2026-06-02
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Figure CN116741651B_ABST
Abstract
The application discloses a testing method for semiconductor discrete devices. The method comprises the following steps: firstly, measuring total capacitance values in a specific range on a wafer, and calculating average capacitance values according to the number N of semiconductor discrete devices in the specific range; then, selecting a semiconductor device to be tested, measuring a measured capacitance value of the semiconductor discrete device to be tested, comparing the average capacitance value with the measured capacitance value, and judging whether the inner dielectric layer thickness of the semiconductor device to be tested is abnormal, and the testing method is ended. The application can overcome the defects of the prior art without changing process steps and increasing process flow, and can early find whether the process flow of the semiconductor discrete device is abnormal.
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