Semiconductor structure carrier and method of controlling the same
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHANGXIN MEMORY TECH INC
- Filing Date
- 2023-06-25
- Publication Date
- 2026-07-24
Smart Images
Figure CN116798934B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor processing technology, and in particular to a semiconductor structure carrier device and its control method. Background Technology
[0002] During rapid thermal processing of semiconductor structures, the thermally deformed semiconductor structure is prone to contact with the carrier disk, which can easily lead to problems such as semiconductor structure breakage, damage to the integrity of the semiconductor structure, and affect the yield of the semiconductor structure. Summary of the Invention
[0003] The following is an overview of the subject matter described in detail in this disclosure. This overview is not intended to limit the scope of the claims.
[0004] The first aspect of this disclosure provides a semiconductor structure carrier device, the semiconductor structure carrier device comprising:
[0005] The bearing portion includes a bearing surface and a clearance ramp disposed around the bearing surface;
[0006] A support portion is disposed on the bearing surface and is used to support the semiconductor structure;
[0007] The avoidance slope is inclined from the side closer to the bearing surface to the side farther away from the bearing surface in a direction away from the semiconductor structure. The support and the avoidance slope have a first position state. In the first position state, the extension direction of the support is perpendicular to the avoidance slope.
[0008] According to some embodiments of this disclosure, the support portion includes a plurality of support columns arranged around the center of the bearing surface, and the bearing portion is provided with a position adjustment portion and / or an angle adjustment portion.
[0009] The position adjustment unit is used to adjust the distance between the center of the support column and the center of the bearing surface;
[0010] The angle adjustment part is used to adjust the angle between the extension direction of the support column and the avoidance slope, so that the support part and the avoidance slope can switch between a first position state and a second position state. In the second position state, the support part is perpendicular to the bearing surface.
[0011] According to some embodiments of this disclosure, the position adjustment part includes a first driving part and a plurality of through slots disposed on the bearing part. Each through slot is provided with a corresponding support column. One end of the support column extends through the bearing surface, and the other end of the support column is connected to the first driving part. The first driving part is used to drive the support column to move along the through slot.
[0012] According to some embodiments of this disclosure, a plurality of support columns share a first driving unit, which is connected to each of the support columns via a transmission mechanism to drive each of the support columns to move synchronously via the transmission mechanism.
[0013] According to some embodiments of this disclosure, the angle adjustment unit includes a second driving unit for driving the support column to rotate relative to the avoidance slope. The first driving unit is connected to the second driving unit so that the first driving unit drives the second driving unit and the support column to move together.
[0014] According to some embodiments of this disclosure, the bearing portion includes a fixed portion and a plurality of rotating units disposed on the outer periphery of the fixed portion, the bearing surface is disposed on the fixed portion, the rotating units are rotatably connected to the fixed portion, and the surface of each rotating unit constitutes the avoidance slope.
[0015] According to some embodiments of this disclosure, the bearing portion is provided with an annular clearance groove, which is located at the intersection of the bearing surface and the clearance slope.
[0016] A second aspect of this disclosure provides a control method for a semiconductor carrier device, applied to the aforementioned semiconductor structure carrier device, the control method comprising:
[0017] Obtain the temperature information of the semiconductor structure;
[0018] Adjust the extension direction of the support and the angle of the avoidance slope according to the temperature information.
[0019] According to some embodiments of this disclosure, adjusting the angle between the extension direction of the support and the avoidance slope based on the temperature information includes:
[0020] During the process of the temperature of the semiconductor structure rising from a first temperature to a second temperature, the support portion is controlled to rotate from a first position to a second position at a first rotational speed;
[0021] During the process of the temperature of the semiconductor structure rising from the second temperature to the third temperature, the support portion is controlled to rotate from the second position to the third position at a second rotation speed;
[0022] In the first position, the extension direction of the support is perpendicular to the bearing surface; in the third position, the extension direction of the support is perpendicular to the avoidance slope; and the first rotational speed is less than the second rotational speed.
[0023] According to some embodiments of this disclosure, adjusting the angle between the extension direction of the support and the avoidance slope based on the temperature information further includes:
[0024] During the process of the temperature of the semiconductor structure decreasing from the fourth temperature to the fifth temperature, the support portion is controlled to rotate from the third position to the fourth position at a third rotation speed;
[0025] During the process of the temperature of the semiconductor structure decreasing from the fifth temperature to the sixth temperature, the support portion is controlled to rotate from the fourth position to the first position at a fourth rotation speed;
[0026] The fourth rotational speed is less than the third rotational speed.
[0027] In the semiconductor structure support device and control method provided in this disclosure, the support portion and the avoidance slope have a first position state. In this position state, the extension direction of the support portion is perpendicular to the avoidance slope, so that the support portion can support the semiconductor structure at a position closer to the edge of the semiconductor structure, thereby increasing the distance between the edge of the semiconductor structure and the avoidance slope of the support portion, so as to avoid the problem of contact between the semiconductor structure and the avoidance slope. And / or, the avoidance slope is more inclined in a direction away from the semiconductor structure, which can effectively avoid the semiconductor structure from contacting the avoidance slope of the support portion during rapid heat treatment, thereby avoiding problems such as scratches on the bottom surface of the semiconductor structure, semiconductor structure cracking, and damage to the avoidance slope.
[0028] After reading and understanding the accompanying diagrams and detailed descriptions, the other aspects can be understood. Attached Figure Description
[0029] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of these embodiments. In these drawings, similar reference numerals are used to denote similar elements. The drawings described below are some embodiments of the present disclosure, but not all embodiments. Other drawings will be readily available to those skilled in the art based on these drawings without inventive effort.
[0030] Figure 1 This is a schematic diagram of a semiconductor structure heat treatment device used in related technologies before rapid heat treatment of semiconductor structures.
[0031] Figure 2 This is a cross-sectional view of a semiconductor structure heat treatment equipment used in the rapid heat treatment process of semiconductor structures in related technologies.
[0032] Figure 3 This is a cross-sectional view of a semiconductor structure carrier and a semiconductor structure in a first position state, according to an exemplary embodiment.
[0033] Figure 4This is a front view of the semiconductor structure support device and the semiconductor structure in the second position state, according to another exemplary embodiment;
[0034] Figure 5 This is a front view of the semiconductor structure carrier and the semiconductor structure in a first position state, according to another exemplary embodiment;
[0035] Figure 6 This is a top view of the semiconductor structure support device and the semiconductor structure in a first position state, according to another exemplary embodiment;
[0036] Figure 7 yes Figure 6 Sectional view at point A-A';
[0037] Figure 8 This is a top view of the semiconductor structure carrier device in a first position state, according to another exemplary embodiment;
[0038] Figure 9 yes Figure 8 Enlarged view of point B in the middle;
[0039] Figure 10 yes Figure 8 Enlarged view of point C in the middle;
[0040] Figure 11 This is a top view of a semiconductor structure carrier device according to another exemplary embodiment;
[0041] Figure 12 This is a temperature change curve of a semiconductor structure during rapid thermal processing, as illustrated in an exemplary embodiment.
[0042] Figure 13 This is a flowchart illustrating a control method for a semiconductor structure carrier device according to an exemplary embodiment;
[0043] Figure 14 This is a flowchart illustrating a control method for a semiconductor structure carrier device according to an exemplary embodiment.
[0044] Figure label:
[0045] This application:
[0046] 1. Bearing part; 101. Fixing part; 102. Rotating unit; 2. Support part; 201. Support column; 2011. Ejector pin structure; 2012. Support structure; 3. Position adjustment part; 301. First driving part; 302. Through groove; 4. Angle adjustment part; 401. Second driving part; 402. Third driving part; 5. Transmission mechanism; 6. Slider; 7. Rolling groove; 8. Ball; 9. Limiting part; 901. Support block; 902. Fixing structure; 10. Bearing surface; 11. Avoidance slope; 12. Drive shaft; 13. Worm gear; 14. Worm; 15. Annular avoidance groove; 16. Semiconductor structure; 17. Gear structure.
[0047] Related technologies:
[0048] 10', bearing surface; 16', semiconductor structure; 18, bearing plate; 19, side; 201', support column. Detailed Implementation
[0049] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions in the disclosed embodiments will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without creative effort are within the scope of protection of this disclosure. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this disclosure can be arbitrarily combined with each other.
[0050] In semiconductor fabrication processes, rapid thermal processing is required for semiconductor structures, such as wafers. This rapid thermal processing can serve as an annealing step for semiconductor structures to repair implantation damage, improve the quality of deposited layers, and activate dopants, while simultaneously preventing dopant diffusion. For example... Figure 1 As shown, the semiconductor structure heat treatment equipment in the related art includes a process chamber (not shown) and a support plate 18 disposed in the process chamber. The support plate 18 includes a support surface 10' and a side surface 19 disposed at a fixed angle to the support surface 10'. A support column 201' is disposed on the support surface 10' to support the semiconductor structure 16'. In this semiconductor structure heat treatment equipment, since the support column 201' can only support the central portion of the semiconductor structure 16', after the semiconductor structure 16' deforms and bends due to heat, reference... Figure 2The edges of the semiconductor structure 16' are prone to contact with the sharp corners formed by the side surface 19 and the support surface 10', which can easily cause scratches, cracks, and other problems, compromising the integrity of the semiconductor structure 16' and affecting its yield. Furthermore, the support disk 18 is typically made of high-purity quartz, ceramic, or other materials, which are inherently fragile. Therefore, when the heated and bent semiconductor structure 16' comes into contact with the support disk 18, it may cause damage to the support disk 18, thereby increasing the maintenance costs of the semiconductor structure heat treatment equipment.
[0051] Based on this, the present disclosure provides a semiconductor structure support device and its control method. The semiconductor structure support device provided by the present disclosure can change the contact position between the support and the semiconductor structure by adjusting the extension direction of the support in real time. This ensures that the semiconductor structure is consistently provided with good support force during bending deformation under temperature, preventing it from falling off the support during deformation and thus avoiding damage. Simultaneously, by adjusting the tilt angle of the avoidance ramp in real time, contact between the semiconductor structure and the avoidance ramp of the support can be effectively avoided during rapid heat treatment, thereby preventing scratches on the bottom surface of the semiconductor structure, semiconductor structure breakage, and damage to the avoidance ramp.
[0052] This disclosure provides a semiconductor structure carrier device in an exemplary embodiment, with reference to... Figure 3 The semiconductor structure support device includes a support part 1 and a support part 2. The support part 1 includes a support surface 10 and a relief slope 11 disposed around the support surface 10. The support part 2 is disposed on the support surface 10 and is used to support the semiconductor structure 16.
[0053] The avoidance slope 11 is inclined from the side closer to the bearing surface 10 to the side farther away from the bearing surface 10, in a direction away from the semiconductor structure 16. The support part 2 and the avoidance slope 11 have the following characteristics: Figure 3 The first position state is shown. Continue to refer to the first position state. Figure 3 The extension direction of the support part 2 is perpendicular to the avoidance slope 11.
[0054] The support portion 1 also includes a bottom surface disposed opposite to the support surface 10. With the size of the bottom surface remaining unchanged, the avoidance slope 11 can be tilted further away from the semiconductor structure 16 by reducing the size of the support surface 10.
[0055] In this embodiment, in the first position, the extension direction of the support 2 is perpendicular to the avoidance slope 11. With this configuration, while the contact position between the support 2 and the bearing surface 10 remains unchanged, the support 2 can provide support to the semiconductor structure 16 at a position closer to the edge of the semiconductor structure 16. This increases the distance between the edge of the semiconductor structure 16 and the avoidance slope 11 of the bearing 1, thus avoiding contact between the semiconductor structure 16 and the avoidance slope 11. And / or, the avoidance slope 11 is tilted further away from the semiconductor structure 16, which can effectively prevent the semiconductor structure 16 from contacting the bearing 1 during rapid heat treatment, thereby avoiding problems such as scratches on the bottom surface of the semiconductor structure 16, cracks in the semiconductor structure 16, and damage to the avoidance slope 11.
[0056] In some embodiments, such as Figure 3 As shown and combined Figure 7 The support part 2 includes a plurality of support columns 201 arranged around the center of the bearing surface 10. The bearing part 1 is provided with a position adjustment part 3, which is used to adjust the distance between the support column 201 and the center of the bearing surface 10.
[0057] The size of the semiconductor structure 16, such as the wafer, varies depending on the specific application and manufacturing requirements. In this embodiment, for semiconductor structures 16 of different sizes, the distance between the support pillar 201 and the center of the bearing surface 10 can be adjusted by the position adjustment unit 3 to provide support for semiconductor structures 16 of different sizes. For example, when the size of the semiconductor structure 16 is small, the distance between the support pillar 201 and the center of the bearing surface 10 can be reduced to provide good support for the smaller semiconductor structure 16. When the size of the semiconductor structure 16 is large, the distance between the support pillar 201 and the center of the bearing surface 10 can be increased to provide good support for the larger semiconductor structure 16. In addition, during the process of heating the semiconductor structure 16, the position of the support pillar 201 can be adjusted so that the support pillar 201 is closer to the edge of the bearing part 1 to support the deformed and bent semiconductor structure 16, increase the distance between the semiconductor structure 16 and the bearing part 1, and avoid the semiconductor structure 16 from contacting the bearing part 1, thereby ensuring the integrity of the semiconductor structure 16.
[0058] In some embodiments, continue to refer to Figure 4The support column 201 includes a pin structure 2011 and a support structure 2012. The support structure 2012 is disposed at the end of the pin structure 2011 away from the bearing surface 10. The support structure 2012 includes a support surface for supporting the semiconductor structure 16, which can be, for example, an arc surface. In the extension direction perpendicular to the support column 201, the maximum cross-sectional area of the support structure 2012 is greater than the cross-sectional area of the pin structure 2011. In this embodiment, when the semiconductor structure 16 is deformed and bent by heat, the bottom surface of the semiconductor structure 16 will undergo relative displacement with the support structure 2012. The arc-shaped support surface and the bottom surface of the semiconductor can have a smoother contact surface and lower contact stress, and provide a more uniform contact pressure distribution to the contact surface by dispersing stress, thereby reducing the risk of scratches during the deformation of the semiconductor structure 16.
[0059] In some embodiments, the support portion 2 includes a plurality of support columns 201 arranged around the center of the bearing surface 10, and the bearing portion 1 is provided with an angle adjustment portion 4. The angle adjustment portion 4 is used to adjust the angle between the extension direction of the support column 201 and the avoidance slope 11. The angle adjustment portion 4 can adjust the angle between the extension direction of the support column 201 and the avoidance slope 11 by adjusting the extension direction of the support column 201, or by adjusting the inclination angle of the avoidance slope 11, or by simultaneously adjusting the extension direction of the support column 201 and the inclination angle of the avoidance slope 11.
[0060] In practical applications, a heat source can be provided to the semiconductor structure mounted on the support 2 through a heating unit (not shown in the figure). The semiconductor structure 16 deforms when heated, and its edges bend towards the avoidance slope 11. During this process, the extension direction of the support 2 and / or the tilt angle of the avoidance slope 11 can be adjusted using the angle adjustment unit 4, so that the support 2 tilts towards the avoidance slope 11 and the avoidance slope 11 rotates away from the semiconductor structure 16. Specifically, when the temperature of the semiconductor structure 16 reaches its maximum value, the support 2 and the avoidance slope 11 can be in the aforementioned first position state. At this time, the curvature of the bottom surface of the semiconductor structure 16 reaches its maximum value. By setting the support 2 and the avoidance slope 11 to the first position state, the support 2 can effectively avoid the semiconductor structure 16. Subsequently, the heating unit's heating temperature can be reduced or shut down, causing the temperature of the semiconductor structure 16 to drop. Its edges will then rebound away from the avoidance slope 11. During this process, the extension direction of the support portion 2 and / or the tilt angle of the avoidance slope 11 can be adjusted using the angle adjustment unit 4. This causes the support portion 2 to tilt away from the avoidance slope 11, and the avoidance slope 11 to rotate towards the semiconductor structure 16, ensuring that the avoidance slope 11 never contacts the bottom surface of the semiconductor structure 16. In this embodiment, by adjusting the extension direction of the support portion 2 in real time, the contact position between the support portion 2 and the semiconductor structure 16 can be changed. This provides good support for the semiconductor structure 16 during bending deformation, preventing it from falling and thus avoiding damage. Simultaneously, by adjusting the tilt angle of the avoidance slope 11 in real time, while ensuring that the support column 201 provides good support for the semiconductor structure 16, contact between the semiconductor structure 16 and the support portion 1 during rapid heat treatment can be effectively avoided.
[0061] Of course, it is understandable that reference Figure 7 and combined Figure 8 The support portion 1 can be simultaneously provided with a position adjustment portion 3 and an angle adjustment portion 4. The position adjustment portion 3 is used to adjust the distance between the center of the support column 201 and the support surface 10, and the angle adjustment portion 4 is used to adjust the angle between the extension direction of the support column 201 and the avoidance slope 11, so that the support portion 2 and the avoidance slope 11 can switch between a first position state and a second position state. In the second position state, the support portion 2 is perpendicular to the support surface 10. In the second position state, the heating unit has not yet supplied heat to the semiconductor structure 16, and at this time, the support portion 2 is in a position as shown in the image. Figure 4 The first position shown.
[0062] In this embodiment, the distance between the support column 201 and the center of the bearing surface 10 can be adjusted by the position adjustment unit 3 so that each support column 201 can provide good support for semiconductor structures 16 of different sizes. At the same time, the extension direction of the support column 201 and the tilt angle of the avoidance slope 11 can be adjusted by the angle adjustment unit 4. In the second position state, the unheated semiconductor structure 16 has not yet deformed or bent. At this time, the support part 2 is perpendicular to both the bearing surface 10 and the bottom surface of the semiconductor structure 16. The support part 2 in the second position state can provide good support for the semiconductor structure 16.
[0063] In some embodiments, continue to refer to Figure 7 and combined Figure 8 The position adjustment unit 3 includes a first driving unit 301 and a plurality of through slots 302 disposed on the support unit 1. Each through slot 302 is provided with a corresponding support post 201. One end of the support post 201 extends through the support surface 10 to ensure that the semiconductor structure 16 is supported only by the support post 201. The other end of the support post 201 is connected to the first driving unit 301. The first driving unit 301 is used to drive the support post 201 to move along the through slot 302.
[0064] When the size of the semiconductor structure 16 is relatively small, before placing the semiconductor structure 16 on the support part 2, the first driving part 301 can be controlled to drive the support column 201 to move along the through groove 302 towards the center of the bearing surface 10. When the size of the semiconductor structure 16 is relatively large, before placing the semiconductor structure 16 on the support part 2, the first driving part 301 can be controlled to drive the support column 201 to move along the through groove 302 away from the center of the bearing surface 10. Of course, it can be understood that during the heat treatment of the semiconductor structure 16, the first driving part 301 can also be controlled to drive each support column 201 to move away from the center of the bearing surface 10, so that when the semiconductor structure 16 is deformed and bent, the support part can support the semiconductor structure 16, so that the support part 2 and the avoidance slope 11 cooperate to further prevent the semiconductor structure 16 from contacting the bearing part 1. In this embodiment, the through slot 302 can effectively limit the support column 201, preventing the support column 201 from tilting or deviating from the preset track during movement, thereby ensuring that the support column 201 can move to the designated position and provide good support for the semiconductor structure 16.
[0065] In some embodiments, such as Figure 7 As shown, multiple support columns 201 share a first drive unit 301. The first drive unit 301 is connected to each support column 201 through a transmission mechanism 5, so as to drive each support column 201 to move synchronously through the transmission mechanism 5.
[0066] In this embodiment, by driving the transmission mechanism 5 and each support column 201 through the first driving unit 301, the consistency of the movement of each support column 201 can be improved. That is, it can be ensured that the support columns 201 at each position can contact the semiconductor structure 16. This avoids the situation where there is a gap between some support columns 201 and the semiconductor structure 16 when the movement distance of each support column 201 is inconsistent, which would cause some support columns 201 to fail to support the semiconductor structure 16. This avoids the problem of the semiconductor structure 16 tilting or falling during rapid heat treatment.
[0067] In some embodiments, continue to refer to Figure 8 The angle adjustment unit 4 includes a second drive unit 401, which drives the support column 201 to rotate relative to the avoidance slope 11. The first drive unit 301 is connected to the second drive unit 401 so that the first drive unit 301 drives the second drive unit 401 and the support column 201 to move together.
[0068] In this embodiment, the second driving unit 401 and the support column 201 are driven by the first driving unit 301 to move in coordination, which ensures that the second driving unit 401 and the support column 201 are always connected. Therefore, after the support column 201 moves to the designated position in a straight line, the second driving unit 401 can still drive the support column 201 to rotate, ensuring that the translational and rotational movements of the support column 201 do not interfere with each other, thereby providing good support for the semiconductor structure 16.
[0069] In an exemplary embodiment of this disclosure, the semiconductor structure carrier device further includes a control device (not shown) that can be used to control the operating state of the first drive unit 301 and the second drive unit 401.
[0070] For example, the first drive unit 301 can be a servo motor, a rotary cylinder, etc., and the transmission mechanism 5 can be a rack and pinion, etc. The transmission mechanism 5 is arranged in a one-to-one correspondence with the support column 201. (Refer to...) Figure 8 When the transmission mechanism 5 is a rack, the output shaft of the first drive unit 301 is provided with a gear structure 17 that cooperates with the transmission mechanism 5, part of the transmission mechanism 5 is located in the through groove 302 of the bearing unit 1, and the second drive unit 401 and the support column 201 are both provided on the rack.
[0071] Before placing the semiconductor structure 16 on the support 2, the size information of the semiconductor structure 16 can be input into the control device. The control device controls the distance between each support column 201 and the center of the bearing surface 10 according to the size information of the semiconductor structure 16, thereby achieving the purpose of supporting semiconductor structures 16 of different sizes by adjusting the position of the support columns 201. When adjusting the position of each support column 201, the control device can control the first drive unit 301 to run. The gear structure 17 set on the output shaft of the first drive unit 301 rotates accordingly, and drives the multiple transmission mechanisms 5 meshing with the gear structure 17 to translate, thereby driving the second drive unit 401 and the support column 201 located on the transmission mechanism 5 to translate.
[0072] In some embodiments, reference Figure 9 and Figure 10 The transmission mechanism 5 is also equipped with a slider 6, such as Figure 7 As shown, a rolling groove 7 opposite to the slider 6 is provided on one side wall of the through groove 302. At least one ball 8 is provided in the rolling groove 7, and all the balls 8 are in contact with the surface of the slider 6.
[0073] In this embodiment, the ball bearing 8 can support the slider 6 and the transmission mechanism 5 connected to the slider 6. At the same time, by the contact between the ball bearing 8 and the slider 6, the friction loss generated by the slider 6 and the transmission mechanism 5 fixedly connected to the slider 6 during transmission can be reduced. Thus, when the power output of the first drive unit 301 is constant, the translation error of the transmission mechanism 5 and the support column 201 located on the transmission mechanism 5 can be reduced, and the consistency of the translation distance of each support column 201 can be further guaranteed.
[0074] In some embodiments, reference Figure 10 The transmission mechanism 5 is provided with a limiting part 9, which includes a support block 901 and a fixing structure 902. The support block 901 is fixedly disposed on the surface of the transmission mechanism 5 to support the fixing structure 902. The support column 201 is rotatably connected to the fixing structure 902. The output shaft of the second drive unit 401 is connected to the end of the support column 201 near the transmission mechanism 5.
[0075] In this embodiment, the temperature information of the semiconductor structure 16 can be obtained by the control device, and the second drive unit 401 can be controlled to run according to the temperature information of the semiconductor structure 16. The second drive unit 401 adjusts the extension and retraction of the output shaft according to the control information input by the control device, thereby controlling the support column 201 to rotate around the axis of the fixed structure 902, so as to achieve the purpose of accurately adjusting the extension direction of the support column 201.
[0076] In some embodiments, reference Figure 1 and Figure 2The bearing part 1 includes a fixed part 101 and a plurality of rotating units 102 disposed on the outer periphery of the fixed part 101. The bearing surface 10 is disposed on the fixed part 101. The rotating units 102 are rotatably connected to the fixed part 101. The surface of each rotating unit 102 forms an avoidance slope 11.
[0077] In this embodiment, the rotating unit 102 and the fixing part 101 are separate structures. For example, the rotating unit 102 can be in the form of a sheet or a block, and this embodiment does not limit this.
[0078] The rotating unit 102 may have a first edge rotatably connected to the bearing portion 1, a second edge opposite to the first edge, and two side edges disposed between the first and second edges. The first edge of each rotating unit 102 surrounds the edge of the fixing portion 101. When the rotating unit 102 rotates, the position of the second edge changes accordingly. There is a gap between adjacent side edges of adjacent rotating units 102 to avoid contact between adjacent rotating units 102 during rotation. In this embodiment, the coordinated cooperation of each rotating unit 102 can effectively achieve the purpose of adjusting the overall tilt angle of the avoidance slope 11, thereby adjusting the relative position of the avoidance slope 11 and the support portion 2. This prevents the deformed and bent semiconductor structure 16 from contacting the avoidance slope 11 during the rapid heat treatment of the semiconductor structure 16, and ensures the integrity of the semiconductor structure 16 and the avoidance slope 11.
[0079] In some embodiments, reference Figure 9 The angle adjustment unit 4 also includes a third drive unit 402 electrically connected to the control device. A drive shaft 12 is provided around the edge of the bearing surface 10. Each rotating unit 102 is fixedly connected to the drive shaft 12 through the first edge. The drive shaft 12 is fixedly connected to the worm gear 13. A worm 14 that cooperates with the worm gear 13 is provided on the output shaft of the third drive unit 402.
[0080] In this embodiment, the temperature information of the semiconductor structure 16 can be collected by the control device, and the operation of the third drive unit 402 can be adjusted in real time according to the temperature information of the semiconductor structure 16. For example, when the semiconductor structure 16 deforms due to heat, the third drive unit 402 drives the worm gear 14 on the output shaft to operate. The worm wheel 13 that cooperates with the worm gear 14 and the drive shaft 12 that is connected to the worm wheel 13 rotate in the forward direction, and further drive the rotating unit 102 installed on the drive shaft 12 to rotate. After the temperature of the semiconductor structure 16 reaches its maximum value, the temperature of the semiconductor structure 16 drops, and its edge rebounds away from the avoidance slope 11. During this process, the third drive unit 402 can drive the worm wheel 13 and the drive shaft 12 that is connected to the worm wheel 13 to rotate in the reverse direction, and further drive the rotating unit 102 installed on the drive shaft 12 to rotate, thereby ensuring that the semiconductor structure 16 will never come into contact with the avoidance slope 11 during the heat treatment process of the semiconductor structure 16.
[0081] In other embodiments, such as Figure 11 As shown, an annular clearance groove 15 is provided on the bearing part 1, and the annular clearance groove 15 is provided at the junction of the bearing surface 10 and the clearance slope 11.
[0082] For example, an annular clearance groove 15 can be formed along the line where the bearing surface 10 intersects with the clearance slope 11 by dry etching or wet etching.
[0083] In this embodiment, since an annular clearance groove 15 is provided, when the semiconductor structure 16 is heated, the edge of the semiconductor structure 16 can extend into the annular clearance groove 15. Therefore, the semiconductor structure 16 will not come into contact with the clearance slope 11, thereby avoiding problems such as scratches on the bottom surface of the semiconductor structure 16, cracks in the semiconductor structure 16, and damage to the clearance slope 11.
[0084] This disclosure also provides a control method for a semiconductor structure carrier device in an exemplary embodiment, such as... Figure 13 As shown, the control method includes the following steps:
[0085] Step S100: Obtain temperature information of the semiconductor structure.
[0086] In this step, the temperature information can be the temperature information preset by the staff according to the actual process technology, or the temperature information can be obtained by detecting the temperature of the semiconductor structure 16 through the temperature detection unit. The temperature detection unit can be set on the support surface 10, located between the support surface 10 and the bottom surface of the semiconductor structure 16, so as to ensure that the temperature detection unit can accurately reflect the actual temperature of the semiconductor structure 16.
[0087] For example, the temperature detection unit can be a device for temperature detection, such as a negative temperature coefficient (NTC) thermistor. The negative temperature coefficient refers to the phenomenon that the resistance of the thermistor decreases exponentially with increasing temperature. The material with the negative temperature coefficient is a semiconductor ceramic made by fully mixing, molding, sintering and other processes of two or more metal oxides such as manganese, copper, silicon, cobalt, iron, nickel and zinc, which can be used to make thermistors with the negative temperature coefficient.
[0088] Of course, it is understandable that, in addition to thermistors, other temperature sensors with good temperature detection performance can also be selected for the temperature detection unit.
[0089] Step S200: Adjust the extension direction of the support and the angle of the avoidance slope according to the temperature information.
[0090] In this step, the extension direction of the support part 2 and the tilt angle of the avoidance slope 11 can be adjusted by the angle adjustment unit 4 according to the temperature information. For example, when the temperature information received by the control device is in an upward state, the semiconductor structure 16 is deformed by heat. At this time, the support part 2 can be tilted towards the avoidance slope 11, and the avoidance slope 11 can be rotated away from the semiconductor structure 16. When the temperature information received by the control device is in a downward state, the extension direction of the support part 2 can be adjusted by the angle adjustment unit 4, so that the support part 2 extends away from the avoidance slope 11, and the avoidance slope 11 can be adjusted to rotate towards the semiconductor structure 16.
[0091] In this embodiment, by adjusting the extension direction of the support 2 in real time, the contact position between the support 2 and the semiconductor structure 16 can be changed. This ensures that the support 2 provides consistent support for the semiconductor structure 16 during its bending deformation under temperature, preventing it from falling off the support 1 and thus avoiding damage. Simultaneously, by adjusting the tilt angle of the avoidance slope 11 in real time, contact between the semiconductor structure 16 and the avoidance slope 11 of the support 1 can be effectively prevented during rapid heat treatment, thus avoiding scratches on the bottom surface of the semiconductor structure 16, breakage of the semiconductor structure 16, and damage to the avoidance slope 11.
[0092] In one exemplary embodiment of this disclosure, such as Figure 14 As shown, step S200 specifically includes the following steps:
[0093] Step S210: During the process of the temperature of the semiconductor structure rising from the first temperature to the second temperature, the support part is controlled to rotate from the first position to the second position at a first rotation speed.
[0094] refer to Figure 12 Before the rapid thermal processing of the semiconductor structure 16, a preheating device is typically used to preheat the semiconductor structure 16 from a first temperature t1 to a second temperature t2. During preheating, the preheating device can use a relatively low heating power to achieve a slow temperature rise of the semiconductor structure 16, ensuring that the entire semiconductor structure 16 is heated from the first temperature t1 to the second temperature t2, thus guaranteeing the uniformity of the internal temperature of the semiconductor structure 16 and reducing the possibility of thermal stress damaging the semiconductor structure 16. The first rotation speed can be specifically set according to the heating power of the preheating device to ensure the stability of the support portion 2 in supporting the semiconductor structure 16.
[0095] Step S220: During the process of the semiconductor structure temperature rising from the second temperature to the third temperature, the support part is controlled to rotate from the second position to the third position at a second rotation speed.
[0096] In this step, refer to Figure 12 During the rapid thermal processing of the semiconductor structure 16, structures such as arc lamps and flash lamps can be used to instantaneously heat the semiconductor structure 16. This heating process can provide high-energy thermal pulses in an extremely short time. The instantaneous heating time in this step can be in the millisecond range. Therefore, during this heating process, the heating rate of the semiconductor structure 16 is extremely fast, and the deformation and bending rate of the semiconductor structure 16 is also relatively fast. Therefore, the second rotation rate of the support part 2 needs to be adapted to the bending rate of the semiconductor structure 16 to ensure the support stability of the support part 2 on the semiconductor structure 16 during the rapid thermal processing of the semiconductor structure 16.
[0097] In the first position, the extension direction of the support part 2 is perpendicular to the bearing surface 10, and in the third position, the extension direction of the support part 2 is perpendicular to the avoidance slope 11, and the first rotation speed is less than the second rotation speed.
[0098] Step S230: As the temperature of the semiconductor structure decreases from the fourth temperature to the fifth temperature, the control support rotates from the third position to the fourth position at a third rotation speed.
[0099] The third temperature t3 and the fourth temperature t4 can be the same, that is, the fourth temperature t4 in this step can be the third temperature t3 in step S220, and the third temperature t3 or the fourth temperature t4 can be the highest temperature reached during the rapid thermal processing of the semiconductor structure 16.
[0100] Continue to refer to Figure 12In this step, when the semiconductor structure 16 reaches the fourth temperature t4, the semiconductor structure 16 can be rapidly cooled by means of laser annealing. Since the semiconductor structure 16 has high thermal conductivity, the time required for this rapid cooling process can also be in the millisecond range. Therefore, the semiconductor structure 16 cools down very quickly during this cooling process, and the springback rate of the deformed and bent semiconductor structure 16 is also relatively fast. Therefore, the third rotating plastic of the support part 2 needs to be adapted to the springback rate of the semiconductor structure 16 to ensure the support stability of the support part 2 on the semiconductor mechanism.
[0101] Step S240: As the temperature of the semiconductor structure decreases from the fifth temperature to the sixth temperature, the control support rotates from the fourth position to the first position at the fourth rotation speed.
[0102] The sixth temperature t6 can be the same as the first temperature t1. That is, the sixth temperature t6 in this step can be the first temperature t1 in step S210. The first temperature t1 and the sixth temperature t6 can be considered as the initial temperature of the semiconductor structure 16.
[0103] In this step, the temperature of the semiconductor structure 16 can be reduced from the fifth temperature t5 to the sixth temperature t6 by means of spraying cooling gas onto the semiconductor structure 16. This process is a slow cooling process, which is beneficial for achieving precise temperature control of the semiconductor structure 16 and reducing the problem of thermal stress damaging the semiconductor structure 16.
[0104] In this embodiment, a rapid thermal processing method, such as millisecond annealing, is used to process the semiconductor structure 16, which can effectively improve the electrical performance of the semiconductor structure 16. For example, it can reduce resistance and increase carrier mobility, thus contributing to improved performance and reliability of the semiconductor structure 16. On the other hand, adjusting the extension direction of the support portion 2 in real time according to temperature information ensures that the support portion 2 always provides good support for the semiconductor structure 16 in a deformed state.
[0105] For example, since instantaneous cooling is used in step S230 and slow cooling is used in step S240, the rebound rate of the semiconductor structure 16 is relatively fast during instantaneous cooling. Correspondingly, the fourth rotation rate is less than the third rotation efficiency, so that the rotation rate of the support 2 can match the rebound rate of the semiconductor structure 16.
[0106] The various embodiments or implementation methods described in this specification are presented in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
[0107] In the description of this specification, references to the terms "embodiment," "exemplary embodiment," "some implementation," "illustrated implementation," "example," etc., refer to specific features, structures, materials, or characteristics described in connection with an implementation or example that are included in at least one implementation or example of this disclosure.
[0108] In this specification, the illustrative expressions of the terms used do not necessarily refer to the same implementation or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more implementations or examples.
[0109] In the description of this disclosure, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure.
[0110] It is understood that the terms "first," "second," etc., as used in this disclosure may be used to describe various structures, but these structures are not limited by these terms. These terms are only used to distinguish one structure from another.
[0111] In one or more accompanying drawings, the same elements are represented by similar reference numerals. For clarity, many parts in the drawings are not drawn to scale. Furthermore, certain well-known parts may not be shown. For simplicity, a structure obtained after several steps may be depicted in a single drawing. Many specific details of this disclosure, such as the structure, materials, dimensions, processing methods, and techniques of the devices, are described below to provide a clearer understanding of the disclosure. However, as those skilled in the art will understand, this disclosure may be implemented without adhering to these specific details.
[0112] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this disclosure, and are not intended to limit them. Although this disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this disclosure.
Claims
1. A semiconductor structure carrier device, characterized in that, The semiconductor structure carrier includes: The bearing portion includes a bearing surface and a clearance ramp disposed around the bearing surface; A support portion is disposed on the bearing surface and is used to support the semiconductor structure; The avoidance slope is inclined from the side closer to the bearing surface to the side farther away from the bearing surface in a direction away from the semiconductor structure. The support and the avoidance slope have a first position state. In the first position state, the extension direction of the support is perpendicular to the avoidance slope. The support portion includes a plurality of support columns arranged around the center of the bearing surface, and the bearing portion is provided with a position adjustment portion and / or an angle adjustment portion. The position adjustment unit is used to adjust the distance between the center of the support column and the center of the bearing surface; The angle adjustment part is used to adjust the angle between the extension direction of the support column and the avoidance slope, so that the support part and the avoidance slope can switch between a first position state and a second position state. In the second position state, the support part is perpendicular to the bearing surface.
2. The semiconductor structure carrier device according to claim 1, characterized in that, The position adjustment unit includes a first driving unit and a plurality of through slots disposed on the bearing unit. Each through slot is provided with a corresponding support column. One end of the support column extends through the bearing surface, and the other end of the support column is connected to the first driving unit. The first driving unit is used to drive the support column to move along the through slot.
3. The semiconductor structure carrier device according to claim 2, characterized in that, Multiple support columns share a first driving unit, which is connected to each support column via a transmission mechanism to drive each support column to move synchronously.
4. The semiconductor structure carrier device according to claim 2, characterized in that, The angle adjustment unit includes a second drive unit, which is used to drive the support column to rotate relative to the avoidance slope. The first drive unit is connected to the second drive unit so that the first drive unit drives the second drive unit and the support column to move together.
5. The semiconductor structure carrier device according to any one of claims 1 to 4, characterized in that, The bearing portion includes a fixed portion and a plurality of rotating units disposed on the outer periphery of the fixed portion. The bearing surface is disposed on the fixed portion, and the rotating units are rotatably connected to the fixed portion. The surface of each rotating unit constitutes the avoidance slope.
6. The semiconductor structure carrier device according to any one of claims 1 to 4, characterized in that, The bearing portion is provided with an annular clearance groove, which is located at the intersection of the bearing surface and the clearance slope.
7. A control method for a semiconductor structure carrier device as described in any one of claims 1 to 6, characterized in that, The control method includes: Obtain the temperature information of the semiconductor structure; Adjust the extension direction of the support and the angle of the avoidance slope according to the temperature information.
8. The control method for the semiconductor structure carrier device according to claim 7, characterized in that, The step of adjusting the angle between the extension direction of the support and the avoidance slope based on the temperature information includes: During the process of the temperature of the semiconductor structure rising from a first temperature to a second temperature, the support portion is controlled to rotate from a first position to a second position at a first rotational speed; During the process of the temperature of the semiconductor structure rising from the second temperature to the third temperature, the support portion is controlled to rotate from the second position to the third position at a second rotation speed; In the first position, the extension direction of the support is perpendicular to the bearing surface; in the third position, the extension direction of the support is perpendicular to the avoidance slope; and the first rotational speed is less than the second rotational speed.
9. The control method for the semiconductor structure carrier device according to claim 8, characterized in that, The step of adjusting the angle between the extension direction of the support and the avoidance slope based on the temperature information further includes: During the process of the temperature of the semiconductor structure decreasing from the fourth temperature to the fifth temperature, the support portion is controlled to rotate from the third position to the fourth position at a third rotation speed; During the process of the temperature of the semiconductor structure decreasing from the fifth temperature to the sixth temperature, the support portion is controlled to rotate from the fourth position to the first position at a fourth rotation speed; The fourth rotational speed is less than the third rotational speed.