Chemical delivery system and method

Abstract

The application provides a chemical delivery system and method, a carrier gas inlet is connected with a vaporizer through a first carrier gas branch, and the carrier gas inlet is connected with a first valve and a second valve through a second carrier gas branch; the first valve is connected with a front-stage pipeline, and the second valve is connected with a reaction cavity; the vaporizer is connected with a liquid chemical delivery system through a liquid chemical delivery pipeline; the vaporizer is connected with a third valve and a fourth valve through a thin film deposition pipeline; the third valve is connected with the front-stage pipeline, and the fourth valve is connected with the reaction cavity; the first valve and the fourth valve are used for being opened when chemical vapor is delivered and being closed when purging is performed; the second valve and the third valve are used for being opened when purging is performed and being closed when chemical vapor is delivered. Therefore, the application can quickly input a large amount of chemical into a reaction cavity through the quick switching among the four valves, and meet the demand of thin film deposition with complex microstructure.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a chemical substance delivery system and method. Background Technology

[0002] In common thin film deposition techniques such as ALD (Atomic layer deposition), PEALD (Plasma enhanced atomic layer deposition), CVD (Chemical Vapor Deposition), and PECVD (Plasma Enhanced Chemical Vapor Deposition), a coating process is typically involved in delivering one or more chemical substances into a reaction chamber to conduct a thin film deposition reaction on the substrate surface to form a thin film.

[0003] During the coating process, a large amount of chemical source is required. Since the vapor pressure of liquid chemical source is low, the chemical source is currently mainly provided to the reaction chamber by bubbling in the source bottle and saturated vapor pressure. However, the above methods cannot provide a large amount of chemical source quickly.

[0004] Meanwhile, in actual thin film deposition processes, as the microstructure of the substrate surface becomes more and more complex, the area to be coated becomes larger and larger, thus placing increasingly higher demands on the reaction time.

[0005] Therefore, there is an urgent need for a method to rapidly introduce large quantities of chemical substances into the reaction chamber within a short period of time. Summary of the Invention

[0006] In view of this, a summary section is provided to briefly introduce the concepts, which will be described in detail in the detailed description section below. This summary section is not intended to identify key or essential features of the claimed technical solution, nor is it intended to limit the scope of the claimed technical solution.

[0007] The purpose of this application is to provide a chemical substance delivery system for thin film deposition, which can rapidly input a large amount of chemical substances into the reaction chamber in a short time to meet the needs of thin film deposition with complex microstructures.

[0008] To achieve the above objectives, this application provides the following technical solution:

[0009] In a first aspect, embodiments of this application provide a chemical substance delivery system, comprising:

[0010] The carrier gas inlet is connected to the vaporizer via the first carrier gas branch;

[0011] The carrier gas inlet is connected to the first valve and the second valve via the second carrier gas branch;

[0012] The first valve is connected to the upstream pipeline, and the second valve is connected to the reaction chamber;

[0013] The vaporizer is connected to the liquid chemical delivery system via a liquid chemical delivery pipeline;

[0014] The vaporizer is connected to the third valve and the fourth valve respectively via a thin film deposition pipeline;

[0015] The third valve is connected to the pre-pipeline, and the fourth valve is connected to the reaction chamber;

[0016] The first valve and the fourth valve are used to open when chemical vapor is supplied to the reaction chamber and to close when the reaction chamber is purged.

[0017] The second valve and the third valve are used to open when purging the reaction chamber and to close when supplying chemical vapor to the reaction chamber.

[0018] One possible implementation also includes:

[0019] The carrier gas inlet is connected to the first carrier gas branch through a main pipeline;

[0020] A carrier gas control valve is installed on the main pipeline; a sixth valve and a second gas mass flow controller are installed on the first carrier gas branch line.

[0021] One possible implementation also includes:

[0022] The purge gas inlet is connected to the main pipeline via the first purge branch;

[0023] A purging gas control valve is installed on the first purging branch.

[0024] One possible implementation also includes:

[0025] The liquid chemical solvent inlet is connected to the liquid chemical delivery pipeline via a first solvent pipeline.

[0026] One possible implementation also includes:

[0027] The coolant tank is connected to the third valve via a first recovery line.

[0028] One possible implementation also includes:

[0029] A liquid flow meter located on the liquid chemical substance delivery pipeline and connected to the vaporizer.

[0030] One possible implementation also includes:

[0031] The fifth valve and the first gas mass flow controller are located on the second carrier gas branch.

[0032] One possible implementation also includes:

[0033] A second purging branch connecting the main pipeline and the liquid chemical substance delivery pipeline;

[0034] A seventh valve is installed on the second purging branch.

[0035] One possible implementation also includes:

[0036] A third purging branch connecting the main pipeline and the first solvent pipeline;

[0037] An eighth valve is installed on the third purging branch.

[0038] One possible implementation also includes:

[0039] The second recovery pipeline is connected to the first valve and the upstream pipeline, respectively.

[0040] A ninth valve is installed on the second recovery pipeline.

[0041] One possible implementation also includes:

[0042] A first cooling branch is connected to the cooling liquid tank and the first recovery pipeline, respectively; a twelfth valve is provided on the first cooling branch.

[0043] A second cooling branch is connected to the cooling liquid tank; a thirteenth valve is installed on the second cooling branch;

[0044] A fourth recovery pipeline is respectively connected to the first recovery pipeline, the first cooling branch, and the second cooling branch; a tenth valve is provided on the fourth recovery pipeline;

[0045] The fourth recovery pipeline is connected to the upstream pipeline through the third recovery pipeline; an eleventh valve is installed on the third recovery pipeline.

[0046] Secondly, embodiments of this application provide a chemical substance delivery method, including:

[0047] Carrier gas is introduced into the vaporizer through the carrier gas inlet connected to the first carrier gas branch.

[0048] Liquid chemicals are introduced into the vaporizer through a liquid chemical delivery system connected to a liquid chemical delivery pipeline to form chemical vapor;

[0049] Carrier gas is introduced through the carrier gas inlet connected to the second carrier gas branch, which is connected to the first valve and the second valve respectively; the first valve is connected to the pre-stage pipeline, and the second valve is connected to the reaction chamber.

[0050] The chemical vapor is delivered through a thin-film deposition pipeline connected to the vaporizer, the thin-film deposition pipeline being connected to a third valve and a fourth valve respectively; the third valve is connected to the pre-line pipeline, and the fourth valve is connected to the reaction chamber;

[0051] Open the first valve and the fourth valve, and close the second valve and the third valve to deliver the chemical vapor into the reaction chamber;

[0052] When the supply of chemical vapor to the reaction chamber is stopped, the second valve and the third valve are opened, and the first valve and the fourth valve are closed to purge the reaction chamber.

[0053] One possible implementation also includes:

[0054] When the chemical vapor is stopped from being supplied to the reaction chamber, liquid chemical solvent is introduced into the liquid chemical supply line through the liquid chemical solvent inlet connected to the first solvent line to dissolve the liquid chemical residue in the liquid chemical supply line.

[0055] One possible implementation also includes:

[0056] When the supply of chemical vapor to the reaction chamber is stopped, the unreacted chemical vapor in the thin film deposition pipeline is introduced into the cooling liquid tank through the first recovery pipeline connected to the third valve.

[0057] Compared with the prior art, the embodiments of this application have the following beneficial effects:

[0058] This application provides a chemical substance delivery system and method. The system includes: a carrier gas inlet connected to a vaporizer via a first carrier gas branch, and the carrier gas inlet connected to a first valve and a second valve via a second carrier gas branch; the first valve connected to a pre-pipeline, and the second valve connected to a reaction chamber; the vaporizer connected to a liquid chemical substance delivery system via a liquid chemical substance delivery pipeline; the vaporizer connected to a third valve and a fourth valve via a thin film deposition pipeline; the third valve connected to the pre-pipeline, and the fourth valve connected to the reaction chamber; the first and fourth valves are used to open when delivering chemical vapor to the reaction chamber and close when purging the reaction chamber; the second and third valves are used to open when purging the reaction chamber and close when delivering chemical vapor to the reaction chamber. Thus, this application, through the rapid switching between the four valves (first, second, third, and fourth valves), can quickly input a large amount of chemical substance into the reaction chamber, meeting the needs of thin film deposition with complex microstructures. Attached Figure Description

[0059] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0060] The above and other features, advantages, and aspects of the embodiments of this disclosure will become more apparent from the accompanying drawings and the following detailed description. Throughout the drawings, the same or similar reference numerals denote the same or similar elements. It should be understood that the drawings are schematic, and the originals and elements are not necessarily drawn to scale.

[0061] Figure 1 A schematic diagram of a chemical substance delivery system provided in an embodiment of this application is shown;

[0062] Figure 2 A flowchart of a chemical substance delivery method provided in an embodiment of this application is shown. Detailed Implementation

[0063] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0064] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0065] As described in the background section, the applicant has found that common thin film deposition technologies such as ALD (Atomic layer deposition), PEALD (Plasma enhanced atomic layer deposition), CVD (Chemical Vapor Deposition), and PECVD (Plasma Enhanced Chemical Vapor Deposition) typically involve delivering one or more chemical substances into a reaction chamber to undergo a thin film deposition reaction on the substrate surface, thereby forming a thin film on the substrate surface.

[0066] During the coating process, a large amount of chemical source is required. Since the vapor pressure of liquid chemical source is low, the chemical source is currently mainly provided to the reaction chamber by bubbling in the source bottle and saturated vapor pressure. However, the above methods cannot provide a large amount of chemical source quickly.

[0067] Meanwhile, in actual thin film deposition processes, as the microstructure of the substrate surface becomes more and more complex, the area to be coated becomes larger and larger, thus placing increasingly higher demands on the reaction time.

[0068] Therefore, there is an urgent need for a method to rapidly introduce large quantities of chemical substances into the reaction chamber within a short period of time.

[0069] Based on the above technical problems, embodiments of this application provide a chemical substance delivery system and method. The system includes: a carrier gas inlet connected to a vaporizer via a first carrier gas branch; the carrier gas inlet connected to a first valve and a second valve via a second carrier gas branch; the first valve connected to a pre-pipeline; the second valve connected to a reaction chamber; the vaporizer connected to a liquid chemical substance delivery system via a liquid chemical substance delivery pipeline; the vaporizer connected to a third valve and a fourth valve via a thin film deposition pipeline; the third valve connected to the pre-pipeline; and the fourth valve connected to the reaction chamber. The first and fourth valves are used to open when supplying chemical vapor to the reaction chamber and to close when purging the reaction chamber; the second and third valves are used to open when purging the reaction chamber and to close when supplying chemical vapor to the reaction chamber. Thus, this application, through rapid switching between the four valves (first, second, third, and fourth valves), can quickly input a large amount of chemical substance into the reaction chamber, meeting the needs of thin film deposition with complex microstructures.

[0070] To better understand the technical solution and effects of this application, the specific embodiments will be described in detail below with reference to the accompanying drawings.

[0071] Exemplary piping

[0072] See Figure 1 As shown, Figure 1 A schematic diagram of a chemical substance delivery system provided in this application embodiment includes:

[0073] The carrier gas inlet 81 is connected to the vaporizer 6 (VAP) via the first carrier gas branch 101, and the carrier gas inlet 81 is connected to the first valve 91 and the second valve 92 via the second carrier gas branch 102.

[0074] The first valve 91 is connected to the pre-pipeline 4, and the second valve 92 is connected to the reaction chamber 7 (process chamber). The vaporizer 6 is connected to the liquid chemical delivery system 84 (LDS) via the liquid chemical delivery pipeline 2. The liquid chemical delivery system 84 can provide the vaporizer 6 with a continuous supply of chemical substances. A seventeenth valve 997 is installed on the liquid chemical delivery pipeline 2 to control the flow of liquid chemical substances.

[0075] The vaporizer 6 is connected to the third valve 93 and the fourth valve 94 via the thin film deposition pipeline 3.

[0076] The third valve 93 is connected to the pre-pipeline 4, and the fourth valve 94 is connected to the reaction chamber.

[0077] The first valve 91 and the fourth valve 94 are used to open when supplying chemical vapor to the reaction chamber 7 and to close when purging the reaction chamber 7; the second valve 92 and the third valve 93 are used to open when purging the reaction chamber 7 and to close when supplying chemical vapor to the reaction chamber 7.

[0078] The liquid chemical substance delivery system D can continuously supply chemical substances to the vaporizer 6. The vaporizer 6 can vaporize the chemical substances to obtain chemical vapor. When the third valve 93 is open and the fourth valve 94 is closed, the chemical vapor that does not enter the reaction chamber 7 can be recovered. When the third valve 93 is closed and the fourth valve 94 is open, the chemical vapor can enter the reaction chamber 7. That is, in this embodiment, the chemical vapor can be rapidly introduced into the reaction chamber 7 during the period when thin film deposition is required by switching the third valve 93 and the fourth valve 94. A large amount of chemical substances can be quickly input into the reaction chamber 7 to meet the needs of thin film deposition with complex microstructures.

[0079] Therefore, in this embodiment, when the first valve 91 and the fourth valve 94 are open, the second valve 92 and the third valve 93 can remain closed.

[0080] The carrier gas inlet 81 can be connected to the vaporizer 6 via the first carrier gas branch 101, thereby providing carrier gas to the vaporizer 6. The vaporizer 6 mixes the chemical vapor produced by the vaporization of the liquid chemical substance supplied through the chemical substance delivery pipeline 2 with the carrier gas introduced through the first carrier gas branch 101, and then inputs it into the reaction chamber 7.

[0081] Meanwhile, in order to maintain the pressure stability in each pipeline of the chemical delivery system during thin film deposition, when the fourth valve 94 is opened, the first valve 91 can be opened simultaneously to introduce carrier gas to the upstream pipeline 4 through the second carrier gas branch 102.

[0082] When the second valve 92 and the third valve 93 are open, the first valve 91 and the fourth valve 94 can remain closed. That is, the second valve 92 and the third valve 93 provided in this embodiment are opened when the reaction chamber 7 is purged.

[0083] Specifically, the second valve 92 can be opened to allow the carrier gas from the second carrier gas branch 102 to enter the reaction chamber 7; the third valve 93 can be opened to allow excess chemical vapor to be introduced into the pre-stage pipeline 4, thereby enabling the recycling of chemical vapor, avoiding waste, and maintaining the pressure stability in each pipeline of the chemical substance delivery system in thin film deposition.

[0084] In this embodiment, after introducing chemical vapor into the reaction chamber 7, the second valve 92 can be opened to introduce the carrier gas from the second carrier gas branch 102 into the reaction chamber 7 to purge it. The carrier gas purging typically uses a normally circulating gas such as argon.

[0085] In this embodiment, the gas flow rates of the second carrier gas branch 102 and the thin film deposition pipeline 3 can be kept consistent so as to maintain the pressure balance of the reaction chamber 7 when switching the pipeline to introduce carrier gas or chemical vapor.

[0086] In one possible implementation, see Figure 1 As shown, the chemical substance delivery system for thin film deposition provided in this application embodiment may further include:

[0087] The carrier gas inlet 81 is connected to the first carrier gas branch 101 through the main pipeline 1;

[0088] The main pipeline 1 is equipped with a carrier gas control valve 994, and the first carrier gas branch 101 is equipped with a sixth valve 96 and a second gas mass flow controller 2222MFC2 (Mass Flow Controller).

[0089] Therefore, in this embodiment, a carrier gas control valve 994 can be installed on the main pipeline 1 to control the on / off state of the carrier gas; the sixth valve 96 can control the on / off state of the carrier gas in the first carrier gas branch 101, and the second gas mass flow controller 2222 can control the flow rate of the carrier gas, thereby providing carrier gas to the vaporizer 6 as needed.

[0090] In one possible implementation, see Figure 1 As shown, the chemical substance delivery system for thin film deposition provided in this application embodiment may further include:

[0091] The purge gas inlet 82 is connected to the main pipeline 1 through the first purge branch 11;

[0092] The first purging branch 11 is equipped with a purging gas control valve 995.

[0093] Therefore, in this embodiment, by connecting the first purge branch 11 to the main pipeline 1, it is possible to control the purge gas to purge the residual chemical source in the pipeline after the thin film deposition reaction in one stage is completed, through the state switching of each valve, which facilitates the replacement of various valves, pipelines and other components. Purge by carrier gas or purge gas can prevent the accumulation of residual chemical source in dead corners of the pipeline or reaction chamber 7.

[0094] Meanwhile, a purging gas control valve 995 can be installed on the first purging branch 11 to realize the on / off control of the purging gas.

[0095] In this embodiment, after the thin film deposition is complete, purge gas can be introduced through the purge gas inlet 82 to purge the various pipelines of the chemical substance delivery system provided in this embodiment, thereby cleaning the pipelines. The purge gas typically uses relatively inexpensive gases such as nitrogen to purge the entire pipeline, which can save costs.

[0096] In one possible implementation, see Figure 1 As shown, the chemical substance delivery system for thin film deposition provided in this application embodiment may further include:

[0097] The liquid chemical solvent inlet 83 is connected to the liquid chemical delivery pipeline 2 via the first solvent pipeline 10.

[0098] Therefore, in this embodiment of the application, by introducing liquid chemical solvent through liquid chemical solvent inlet 83, the liquid chemical substance with high viscosity and which is not easy to be blown away by gas can be dissolved and then blown away by gas.

[0099] For example, if the liquid chemical substance supplied by the liquid chemical substance delivery system is a chemical source with high viscosity, after a stage of thin film deposition reaction is completed, liquid chemical solvent can be supplied to the liquid flowmeter 5 (LFM) and vaporizer 6, and the liquid chemical solvent can be controlled by switching the states of valves 93 and 94 to determine whether it enters the pipeline through the reaction chamber or the pipeline through the cooling liquid tank 8.

[0100] Meanwhile, a liquid chemical solvent control valve 996 can be installed on the first solvent pipeline 10 to realize the on / off control of the liquid chemical solvent.

[0101] In one possible implementation, see Figure 1 As shown, the chemical substance delivery system for thin film deposition provided in this application embodiment may further include:

[0102] The coolant tank 8 is connected to the third valve 93 via the first recovery line 111.

[0103] Therefore, in this embodiment of the application, after the third valve 93 is opened, a cooling liquid tank 8 can be set up, so that excess chemical vapor can be introduced into the cooling liquid tank 8, thereby realizing the recycling of chemical vapor, avoiding waste, and maintaining the pressure stability in each pipeline of the chemical substance delivery system in the thin film deposition.

[0104] In one possible implementation, see Figure 1 As shown, the chemical substance delivery system for thin film deposition provided in this application embodiment may further include:

[0105] A liquid flow meter 5 (LFM) is located on the liquid chemical substance delivery pipeline 2 and connected to the vaporizer VAP. Through a control method combining the LFM (liquid flow meter) and VAP (vaporizer), the chemical vapor produced by the vaporization of the liquid chemical substance at a rated flow rate is delivered to the reaction chamber 7.

[0106] In one possible implementation, see Figure 1 As shown, the chemical substance delivery system for thin film deposition provided in this application embodiment may further include:

[0107] The fifth valve 95 and the first gas mass flow controller 1111MFC1 are located on the second carrier gas branch 102.

[0108] Therefore, in this embodiment, the fifth valve 95 can control the on / off of the carrier gas in the second carrier gas branch 102, and the first gas mass flow controller 1111 can control the flow rate of the carrier gas, thereby providing carrier gas to the reaction chamber 7 as needed.

[0109] In one possible implementation, see Figure 1 As shown, the chemical substance delivery system for thin film deposition provided in this application embodiment may further include:

[0110] Second purging branch 12 connects main pipeline 1 and liquid chemical substance delivery pipeline 2;

[0111] The seventh valve 97 is installed on the second purging branch 12.

[0112] Therefore, in this embodiment, the purging gas can be introduced into the liquid chemical substance delivery pipeline 2 through the second purging branch 12 to purge the liquid chemical substance delivery pipeline 2. The flow of the purging gas into the liquid chemical substance delivery pipeline 2 is controlled by the seventh valve 97.

[0113] In one possible implementation, see Figure 1 As shown, the chemical substance delivery system for thin film deposition provided in this application embodiment may further include:

[0114] The third purging branch 13 connects the main pipeline 1 and the first solvent pipeline 10;

[0115] The eighth valve 98 is installed on the third purging branch 13.

[0116] Therefore, in this embodiment, the purge gas can be introduced into the first solvent line 10 through the third purge branch 13 to purge the first solvent line 10. The purge gas entering the first solvent line 10 is controlled by the eighth valve 98.

[0117] In one possible implementation, see Figure 1 As shown, the chemical substance delivery system for thin film deposition provided in this application embodiment may further include:

[0118] Second recovery pipeline 112; Second recovery pipeline 112 is connected to first valve 91 and foreline 4 respectively;

[0119] A ninth valve 99 is installed on the second recovery pipeline 112.

[0120] Therefore, in this embodiment of the application, the first valve 91 and the pre-pipeline 4 can be connected through the second recovery pipeline 112, and the ninth valve 99 can realize the opening and closing of the carrier gas leading to the pre-pipeline 4.

[0121] In one possible implementation, see Figure 1 As shown, the chemical substance delivery system for thin film deposition provided in this application embodiment may further include:

[0122] A first cooling branch 1001 is connected to the cooling liquid tank 8 and the first recovery pipeline 111 respectively, and a twelfth valve 992 is provided on the first cooling branch 1001; a second cooling branch 1002 is connected to the cooling liquid tank 8; a thirteenth valve 993 is provided on the second cooling branch 1002.

[0123] A fourth recovery pipe 114 is connected to the first recovery pipe 111, the first cooling branch 1001, and the second cooling branch 1002 respectively. A tenth valve 990 is installed on the fourth recovery pipe 114. The fourth recovery pipe 114 is connected to the front-end pipe 4 through the third recovery pipe 113. An eleventh valve 991 is installed on the third recovery pipe 113.

[0124] Therefore, in this embodiment, by setting up a cooling liquid tank 8, the cooling liquid tank 8 can perform refrigeration. When the third valve 93 is opened, the chemical vapor vaporized by the vaporizer 6 will flow to the cooled cooling liquid tank 8 through the first recovery pipe 111 and the first cooling branch 1001. After the high-temperature vaporized chemical vapor mixes with the carrier gas introduced through the first carrier gas branch 101, it condenses into liquid after passing through the cooled cooling liquid tank 8, and the volume is greatly reduced; the condensed liquid chemical substances can be reused.

[0125] A twelfth valve 992 is installed on the first cooling branch 1001, which controls the flow of chemical vapor into the cooling liquid tank 8. The condensed liquid chemical substance can enter the subsequent reuse pipeline through the second cooling branch 1002 connected to the cooling liquid tank 8. A thirteenth valve 993 is installed on the second cooling branch 1002, which controls the flow of carrier gas and liquid chemical substance out of the cooling liquid tank 8.

[0126] In addition, when the purge gas is purging the pipeline, the third valve 93 can be opened. The purge gas does not need to enter the coolant tank 8. The twelfth valve 992 and the thirteenth valve 993 are closed, and the tenth valve 990 is opened. The purge gas is directly introduced into the subsequent pre-pipeline 4 through the fourth recovery pipeline 114, which is connected to the first recovery pipeline 111, the first cooling branch 1001 and the second cooling branch 1002 respectively. The fourth recovery pipeline 114 is connected to the pre-pipeline 4 through the third recovery pipeline 113.

[0127] The fourth recovery pipeline 114 is equipped with a tenth valve 990, and the third recovery pipeline 113 is equipped with an eleventh valve 991, so that the on / off state of each pipeline can be controlled separately.

[0128] This application provides a chemical substance delivery system, comprising: a carrier gas inlet connected to a vaporizer via a first carrier gas branch, and the carrier gas inlet connected to a first valve and a second valve via a second carrier gas branch; the first valve connected to a pre-pipeline, and the second valve connected to a reaction chamber; the vaporizer connected to a liquid chemical substance delivery system via a liquid chemical substance delivery pipeline; the vaporizer connected to a third valve and a fourth valve via a thin film deposition pipeline; the third valve connected to the pre-pipeline, and the fourth valve connected to the reaction chamber; the first and fourth valves are used to open when supplying chemical vapor to the reaction chamber and to close when purging the reaction chamber; the second and third valves are used to open when purging the reaction chamber and to close when supplying chemical vapor to the reaction chamber. Thus, this application, through the rapid switching between the four valves (first, second, third, and fourth valves), can quickly input a large amount of chemical substance into the reaction chamber, meeting the requirements for thin film deposition with complex microstructures.

[0129] Exemplary methods

[0130] See Figure 2 The diagram shown is a flowchart of a chemical substance delivery method provided in an embodiment of this application. Figure 1 As shown, the method may include:

[0131] S101: Carrier gas is introduced into the vaporizer 6 through the carrier gas inlet 81 connected to the first carrier gas branch 101.

[0132] S102: Liquid chemical substances are introduced into the vaporizer 6 through the liquid chemical substance delivery system 84 connected to the liquid chemical substance delivery pipeline 2 to form chemical vapor;

[0133] S103: Carrier gas is introduced through the carrier gas inlet 81 connected to the second carrier gas branch 102. The second carrier gas branch 102 is connected to the first valve 91 and the second valve 92 respectively. The first valve 91 is connected to the pre-stage pipeline 4, and the second valve 92 is connected to the reaction chamber 7.

[0134] S104: The chemical vapor is delivered through the thin film deposition pipeline 3 connected to the vaporizer 6. The thin film deposition pipeline 3 is connected to the third valve 93 and the fourth valve 94 respectively. The third valve 93 is connected to the pre-pipeline 4, and the fourth valve 94 is connected to the reaction chamber 7.

[0135] S105: Open the first valve 91 and the fourth valve 94, and close the second valve 92 and the third valve 93 to deliver the chemical vapor to the reaction chamber 7;

[0136] S106: When the chemical vapor is stopped from being supplied to the reaction chamber 7, the second valve 92 and the third valve 93 are opened, and the first valve 91 and the fourth valve 94 are closed to purge the reaction chamber 7.

[0137] In one possible implementation, the method provided in this application embodiment may further include:

[0138] When the chemical vapor is stopped from being supplied to the reaction chamber 7, liquid chemical solvent is introduced into the liquid chemical supply line 2 through the liquid chemical solvent inlet 83 connected to the first solvent line 10 to dissolve the liquid chemical residue in the liquid chemical supply line 2.

[0139] In one possible implementation, the method provided in this application embodiment may further include:

[0140] When the supply of chemical vapor to the reaction chamber 7 is stopped, the unreacted chemical vapor in the thin film deposition pipeline 3 is introduced into the cooling liquid tank 8 through the first recovery pipeline 111 connected to the third valve 93.

[0141] This application provides a chemical substance delivery method, comprising: introducing carrier gas into a vaporizer through a carrier gas inlet connected to a first carrier gas branch; introducing liquid chemical substances into the vaporizer through a liquid chemical substance delivery system connected to a liquid chemical substance delivery pipeline to form chemical vapor; introducing carrier gas through a carrier gas inlet connected to a second carrier gas branch, the second carrier gas branch being connected to a first valve and a second valve respectively; the first valve being connected to a pre-pipeline, the second valve being connected to a reaction chamber; delivering chemical vapor through a thin film deposition pipeline connected to the vaporizer, the thin film deposition pipeline being connected to a third valve and a fourth valve respectively; the third valve being connected to the pre-pipeline, the fourth valve being connected to the reaction chamber; opening the first valve and the fourth valve, and closing the second valve and the third valve to deliver chemical vapor to the reaction chamber; opening the second valve and the third valve, and closing the first valve and the fourth valve to purge the reaction chamber. Thus, this application, through the rapid switching between the four valves (first, second, third, and fourth valves), can quickly input a large amount of chemical substances into the reaction chamber, meeting the needs of thin film deposition with complex microstructures.

[0142] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on its differences from other embodiments. In particular, the method embodiments are basically similar to the system embodiments, so they are described more simply; relevant parts can be referred to the descriptions of the method embodiments.

[0143] The above description is merely a preferred embodiment of this application. Although this application has disclosed preferred embodiments above, it is not intended to limit this application. Any person skilled in the art can make many possible variations and modifications to the technical solutions of this application using the methods and techniques disclosed above, or modify them into equivalent embodiments with equivalent changes, without departing from the scope of the technical solutions of this application. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of this application without departing from the content of the technical solutions of this application shall still fall within the protection scope of the technical solutions of this application.

Claims

1. A chemical substance delivery system, characterized in that, include: The carrier gas inlet is connected to the vaporizer via the first carrier gas branch; The carrier gas inlet is connected to the first valve and the second valve via the second carrier gas branch; The first valve is connected to the upstream pipeline, and the second valve is connected to the reaction chamber; The vaporizer is connected to the liquid chemical delivery system via a liquid chemical delivery pipeline; The vaporizer is connected to the third valve and the fourth valve respectively via a thin film deposition pipeline; The third valve is connected to the pre-pipeline, and the fourth valve is connected to the reaction chamber; The gas flow rates of the second carrier gas branch and the thin film deposition pipeline are kept consistent so as to maintain the pressure balance of the reaction chamber when switching the pipeline to introduce carrier gas or chemical vapor; The first valve and the fourth valve are used to open when supplying chemical vapor to the reaction chamber and close when purging the reaction chamber, so that when chemical vapor is input to the reaction chamber, carrier gas is introduced to the upstream pipeline through the first valve and the second carrier gas branch to maintain the pipeline pressure of the chemical substance delivery system. The second valve and the third valve are used to open when purging the reaction chamber and close when delivering chemical vapor to the reaction chamber, so that during purging of the reaction chamber, chemical vapor that does not enter the reaction chamber can be recovered through the third valve, while maintaining the pipeline pressure of the chemical substance delivery system.

2. The system according to claim 1, characterized in that, Also includes: The carrier gas inlet is connected to the first carrier gas branch through a main pipeline; A carrier gas control valve is installed on the main pipeline; a sixth valve and a second gas mass flow controller are installed on the first carrier gas branch line.

3. The system according to claim 2, characterized in that, Also includes: The purge gas inlet is connected to the main pipeline via the first purge branch; A purging gas control valve is installed on the first purging branch.

4. The system according to any one of claims 2-3, characterized in that, Also includes: The liquid chemical solvent inlet is connected to the liquid chemical delivery pipeline via a first solvent pipeline.

5. The system according to any one of claims 1-3, characterized in that, Also includes: The coolant tank is connected to the third valve via a first recovery line.

6. The system according to any one of claims 1-3, characterized in that, Also includes: A liquid flow meter located on the liquid chemical substance delivery pipeline and connected to the vaporizer.

7. The system according to any one of claims 1-3, characterized in that, Also includes: The fifth valve and the first gas mass flow controller are located on the second carrier gas branch.

8. The system according to claim 2, characterized in that, Also includes: A second purging branch connecting the main pipeline and the liquid chemical substance delivery pipeline; A seventh valve is installed on the second purging branch.

9. The system according to claim 4, characterized in that, Also includes: A third purging branch connecting the main pipeline and the first solvent pipeline; An eighth valve is installed on the third purging branch.

10. The system according to claim 1, characterized in that, Also includes: The second recovery pipeline is connected to the first valve and the upstream pipeline, respectively. A ninth valve is installed on the second recovery pipeline.

11. The system according to claim 5, characterized in that, Also includes: A first cooling branch is connected to the cooling liquid tank and the first recovery pipeline, respectively; a twelfth valve is provided on the first cooling branch. A second cooling branch is connected to the cooling liquid tank; a thirteenth valve is installed on the second cooling branch; A fourth recovery pipeline is respectively connected to the first recovery pipeline, the first cooling branch, and the second cooling branch; a tenth valve is provided on the fourth recovery pipeline; The fourth recovery pipeline is connected to the upstream pipeline through the third recovery pipeline; an eleventh valve is installed on the third recovery pipeline.

12. A method for delivering chemical substances, characterized in that, include: Carrier gas is introduced into the vaporizer through the carrier gas inlet connected to the first carrier gas branch. Liquid chemicals are introduced into the vaporizer through a liquid chemical delivery system connected to a liquid chemical delivery pipeline to form chemical vapor; Carrier gas is introduced through the carrier gas inlet connected to the second carrier gas branch, which is connected to the first valve and the second valve respectively; the first valve is connected to the pre-stage pipeline, and the second valve is connected to the reaction chamber. The chemical vapor is delivered through a thin-film deposition pipeline connected to the vaporizer, the thin-film deposition pipeline being connected to a third valve and a fourth valve respectively; the third valve is connected to the pre-line pipeline, and the fourth valve is connected to the reaction chamber; The gas flow rates of the second carrier gas branch and the thin film deposition pipeline are kept consistent so as to maintain the pressure balance of the reaction chamber when switching between carrier gas and chemical vapor in the pipeline. The first valve and the fourth valve are opened, and the second valve and the third valve are closed to deliver the chemical vapor to the reaction chamber. When the chemical vapor is input into the reaction chamber, carrier gas is introduced into the upstream pipeline through the first valve and the second carrier gas branch to maintain the pipeline pressure of the chemical substance delivery system. When the chemical vapor is stopped from being supplied to the reaction chamber, the second valve and the third valve are opened, and the first valve and the fourth valve are closed to purge the reaction chamber. During the purging of the reaction chamber, the chemical vapor that does not enter the reaction chamber is introduced into the pre-line pipeline for recovery through the third valve, and the pipeline pressure of the chemical substance delivery system is kept stable.

13. The method according to claim 12, characterized in that, Also includes: When the chemical vapor is stopped from being supplied to the reaction chamber, liquid chemical solvent is introduced into the liquid chemical supply line through the liquid chemical solvent inlet connected to the first solvent line to dissolve the liquid chemical residue in the liquid chemical supply line.

14. The method according to claim 12, characterized in that, Also includes: When the supply of chemical vapor to the reaction chamber is stopped, the unreacted chemical vapor in the thin film deposition pipeline is introduced into the cooling liquid tank through the first recovery pipeline connected to the third valve.

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