Substrate support, method of processing a substrate, and processing system

Abstract

A substrate support for supporting a substrate in a vacuum processing system is described. The substrate support includes a substrate support body having a front side for supporting the substrate and a back side opposite the front side, a chuck assembly in the substrate support body or at the back side of the substrate support body, a plurality of first openings in the front side, the plurality of first openings in fluid communication with a gas conduit, a plurality of second openings through the substrate support body configured for supporting a plurality of lift pins of the substrate during loading or unloading, a plurality of first protrusions on the front side, each first protrusion at least partially enclosing a second opening of the plurality of second openings, and a plurality of second protrusions on the front side configured for temperature measurement.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to temperature measurement of a substrate, e.g. of a large area substrate on an electrostatic chuck (ESC). Embodiments relate to a substrate support and a method for measuring a temperature of a substrate, in particular in different zones of a substrate support. Embodiments particularly relate to a substrate support, a method of measuring a temperature of a substrate, and a processing system for processing a substrate in a vacuum chamber. BACKGROUND

[0002] Techniques for layer deposition on a substrate include, for example, physical vapor deposition (PVD), chemical vapor deposition (CVD), and thermal evaporation. Coated substrates can be used in several applications and in several technical fields. For example, substrates for displays, including substrates for high density displays, can be coated by a PVD process. Some applications include insulating panels, substrates with TFTs, color filters, etc. Coated substrates, such as substrates for displays, can include one or more layers of material deposited on a substrate between two electrodes.

[0003] For processing a substrate in a processing system, the substrate is transported through subsequent processing chambers of the processing system, such as deposition chambers and optionally further processing chambers (e.g. cleaning chambers and / or etching chambers), wherein the subsequent processing in the processing chambers is such that a plurality of substrates can be processed subsequently in a cluster system or continuously or quasi-continuously in an inline processing system. The substrate can be supported on a support, such as a support table, or the substrate can be loaded onto a substrate support that is transported through the processing system.

[0004] A substrate supported by a substrate support table or transported by a carrier for processing in a vacuum processing system can include one or more previously deposited layers of material. A substrate including previously processed layers is referred to as a substrate for an upcoming process. Layers disposed on a substrate can be temperature sensitive. In particular, organic materials that have been previously deposited on a substrate can be damaged by temperatures of, for example, 60°C or more, 80°C or more, or 100°C or more.

[0005] In addition, it is beneficial to perform substrate processing at high deposition rates to reduce the tact time of the processing. Thus, the temperature limit on the one hand and the high deposition rate on the other hand provide mutually conflicting benefits.

[0006] In view of the above, it is beneficial to provide an improved substrate support and an improved method of temperature measurement. SUMMARY

[0007] In view of the above, a substrate support for supporting a substrate in a vacuum processing system, a method for measuring a temperature of a substrate, and a processing system for processing a substrate in a vacuum chamber are provided according to the independent claims. Further features, aspects, details and specific embodiments are described in the detailed description, the drawings and the dependent claims.

[0008] According to one embodiment, a substrate support for supporting a substrate in a vacuum processing system is provided. The substrate support comprises: a substrate support body having a front side for supporting the substrate and a back side opposite the front side; a chuck assembly in the substrate support body or at the back side of the substrate support body; a plurality of first openings in the front side, the plurality of first openings being in fluid communication with a gas conduit; a plurality of second openings through the substrate support body configured for supporting a plurality of lift pins of the substrate during loading or unloading; a plurality of first protrusions on the front side, each first protrusion at least partially enclosing a second opening of the plurality of second openings; and a plurality of second protrusions on the front side configured for temperature measurement.

[0009] According to one embodiment, a method of processing a substrate in a vacuum processing system is provided. The method comprises: loading the substrate on a substrate support, the substrate support having a substrate support body and a chuck assembly, the substrate support body having a front side; cooling at least a portion of the substrate loaded on the substrate support with a cooling gas to provide a cooled substrate portion; measuring a first substrate temperature in a first zone within the cooled substrate portion while the substrate is loaded on the substrate support; and measuring a second substrate temperature in a second zone different from the first zone.

[0010] According to one embodiment, a processing system for processing a substrate in a vacuum chamber is provided. The processing system comprises: a loading station, the loading station being specifically configured for horizontal substrate loading; a vacuum processing chamber; and a controller. The controller comprises: a processor; and a memory storing instructions which, when executed by the processor, cause performing a method according to any of the embodiments described herein. BRIEF DESCRIPTION OF DRAWINGS

[0011] For a more detailed understanding of the above-mentioned features of the present disclosure, reference can be made to the more particular description of the disclosure that is briefly described above. The accompanying drawings relate to embodiments of the present disclosure and are described in the following:

[0012] Figure 1A schematic cross-sectional view of a substrate support according to embodiments described herein is shown;

[0013] Figure 2A A schematic cross-sectional view of a substrate support according to embodiments described herein is shown;

[0014] Figure 2B A schematic cross-sectional view of a substrate support according to embodiments described herein is shown; Figure 2A An enlarged view of a portion of the substrate support of

[0015] Figure 2C A schematic front view of a substrate support according to embodiments described herein is shown;

[0016] Figure 3A A schematic view of a processing system for processing a substrate according to embodiments described herein is shown;

[0017] Figure 3B A schematic view of a processing apparatus for processing a substrate according to embodiments described herein is shown;

[0018] Figure 3C A schematic view of a processing system for processing a substrate according to embodiments described herein is shown; and

[0019] Figure 4 A flowchart of a method of measuring a temperature of a substrate, for example in a processing system, according to embodiments described herein is shown. DETAILED DESCRIPTION

[0020] Reference will now be made in detail to various embodiments of the present disclosure, one or more examples of which are illustrated in the accompanying drawings. Within the following description of the drawings, same reference numbers refer to same components. Only the differences between the various embodiments are described. Each example is provided by way of explanation of the present disclosure and is not meant as a limitation of the present disclosure. Additionally, features illustrated or described as part of one embodiment can be used with another embodiment or in combination with another embodiment to produce yet another embodiment. It is intended that the description included in this specification be considered as exemplary and not as limiting.

[0021] Substrate supports can be used in processing systems, such as vacuum deposition systems, for holding and / or transporting substrates within a vacuum chamber of the processing system. For example, one or more layers of material can be deposited on a substrate while the substrate is supported by a substrate support. According to some embodiments of the present disclosure, which can be combined with other embodiments described herein, a substrate support can be a support table (e.g., a substrate support table) or a pedestal (e.g., a substrate support pedestal disposed in a processing chamber of a vacuum processing system). A support table can be particularly configured for horizontal substrate processing or substantially horizontal substrate processing. For example, a processing chamber including a substrate support can be disposed in a cluster system. According to some embodiments of the present disclosure, which can be combined with other embodiments described herein, a substrate support can be a carrier, particularly a carrier within an electrostatic chuck (ESC). A carrier can be particularly configured for vertical substrate processing or substantially vertical substrate processing. A substrate can be supported by the carrier, and the carrier can move the substrate through a vacuum processing system and can support the substrate during processing of the substrate.

[0022] Supporting a substrate with a carrier for substrate processing has the advantage of reducing glass breakage, for example, for transporting the substrate through the processing system.

[0023] A substrate can be held or supported by a substrate support at a backside (i.e., the side of the substrate that does not face the deposition source). The frontside of the substrate (i.e., the side of the substrate that faces the deposition source) is not covered by a holding arrangement of, for example, a carrier, allowing material to be deposited to reach areas of the substrate that would otherwise be difficult to reach. In some applications, a substrate support can include an electrostatic chuck for holding a substrate at the backside. When loading a substrate onto a substrate support, the substrate can be provided onto the electrostatic chuck until electrostatic forces are sufficiently established.

[0024] Embodiments of the present disclosure provide an electrostatic chuck with integrated substrate temperature measurement. For example, closed loop control of substrate temperature and sputter power can be provided.

[0025] For some applications, such as touch screen panels (TSPs) including an organic layer, the substrate with the organic layer can be sensitive to temperature increases during subsequent substrate processing operations, such as sputtering additional layers on the substrate. A cooling gas, e.g., helium, can be provided into a gap between the substrate, e.g., a glass substrate, and an electrostatic chuck. According to some embodiments, which can be combined with other embodiments described herein, the substrate temperature is set to 100 °C or less, in particular 80 °C or less. The power of the sputtering process during substrate processing can be controlled to adjust the substrate temperature to a temperature limit. According to some embodiments, which can be combined with other embodiments described herein, a gas cushion, e.g., a helium gas cushion, e.g., of about 3 to 10 mbar, can be provided. The heat transfer between the substrate and a plate of the ESC, e.g., a water-cooled plate, can be improved. According to some embodiments, which can be combined with other embodiments described herein, the substrate support can include water cooling for the substrate receiving surface.

[0026] The improved method of measuring temperature according to embodiments described herein and the improved substrate support for temperature control according to embodiments described herein are beneficial compared to simulations considering cooling of the substrate with a cooling gas and sputtering power. Thus, the sputtering power can be maximized while the temperature limit can be controlled. Thus, the throughput of the process can be improved.

[0027] Figure 1 A schematic cross-sectional view of a substrate support 100 according to embodiments described herein is shown. The substrate support can be a substrate support table. The substrate support 100 is configured for supporting a substrate in a processing chamber. The substrate support 100 includes a substrate support body 140 having a substrate support surface, e.g., a front side 142, for supporting a substrate. A back side 143 is disposed opposite the front side 142. Further, the substrate support includes a chuck assembly 120. The chuck assembly 120 is configured to hold a substrate at the substrate support surface. The chuck assembly can include an electrode assembly 125 for providing an electrostatic force to the substrate. For example, an electrostatic field can be provided by the electrode assembly 125 to act on the substrate to hold the substrate. The substrate can be supported in the processing chamber or transported through the processing system while being held by the electrostatic field.

[0028] According to embodiments described herein, the substrate support 100 includes a substrate support surface, i.e., the front side 142. For example, a substrate to be carried through a processing system can be held at the substrate support surface of the substrate support. The substrate can be held at the substrate support surface by electrostatic forces. According to embodiments, the substrate support can include a plurality of first openings 112 in the substrate support surface. The plurality of first openings can be connected to a gas conduit 110. The gas conduit can be connected to a gas supply. The gas conduit can be connected to a gas source 160 for providing a cooling gas. For example, the gas source 160 can be a gas tank or a gas supply of a processing system. The gas conduit can include a plurality of passages 116. Each of the passages of the plurality of passages 116 can open to one of the plurality of first openings 112.

[0029] By providing a cooling gas, e.g., helium, into the gas conduit or passages 116, the cooling gas can be provided between a substrate supported by the substrate support 100 and a substrate. Thus, the substrate temperature can be reduced during substrate processing. According to some embodiments, which can be combined with other embodiments described herein, the cooling gas can be selected from the group consisting of helium, argon, etc.

[0030] According to embodiments described herein, the substrate support can include at least one electrically non-conductive region. The at least one electrically non-conductive region can be made of a dielectric material. In particular, the dielectric can be made of a high thermal conductivity dielectric material such as pyrolytic boron nitride, aluminum nitride, aluminum oxide, silicon nitride, aluminum oxide, etc. or equivalent materials, but also materials such as polyimide, etc. The electrode assembly 125 can be embedded in the at least one electrically non-conductive region or disposed on a side of the electrically non-conductive region opposite the substrate support surface.

[0031] According to some embodiments, which can be combined with other embodiments described herein, the substrate support 100 can include one or more voltage sources configured to apply one or more voltages to the plurality of electrodes 122. In some embodiments, the one or more voltage sources are configured to ground at least some of the plurality of electrodes 122. As an example, the one or more voltage sources can be configured to apply a first voltage having a first polarity, a second voltage having a second polarity, and / or ground to the plurality of electrodes 122. According to some embodiments, each electrode, each second electrode, each third electrode, or each fourth electrode of the plurality of electrodes can be connected to a separate voltage source. The term "polarity" refers to electrode polarity, i.e., negative (-) and positive (+). By way of example, the first polarity can be a negative polarity and the second polarity can be a positive polarity, or the first polarity can be a positive polarity and the second polarity can be a negative polarity. According to some embodiments, which can be combined with other embodiments described herein, the ESC of the substrate support can be a unipolar or a bipolar electrostatic chuck.

[0032] According to one embodiment, controller 130 may be configured to control one or more voltage sources to apply one or more voltages to electrode assembly 125 and / or ground. Controller 130 may be configured to adjust the suction cup assembly, i.e., controller may be configured to control the electrostatic suction cup. Controller 130 may be configured to adjust gas source 160. According to yet another embodiment that may be combined with other embodiments described herein, controller may be configured to control or communicate with a first temperature sensor and / or control or communicate with a second temperature sensor. According to yet another embodiment that may be combined with other embodiments described herein, such as... Figure 1 The controller 130 shown can be separated into separate controllers for voltage sources, gas sources, and / or temperature sensors.

[0033] like Figure 1 As exemplarily shown, a first temperature sensor 150 disposed at the substrate support 100 may be included in embodiments of this disclosure. Additionally or alternatively, a second temperature sensor 155, such as an external temperature sensor, may be provided. (Refer to...) Figure 2A The method of using a temperature sensor at substrate support 100 and / or using it to measure substrate temperature is described in more detail.

[0034] According to the embodiments described herein, for cluster processing systems or wafer processing systems, the substrate support may be oriented substantially horizontally. For inline processing systems, the substrate support may be oriented substantially vertically. The substrate may be transported through the processing system in a substantially vertical orientation.

[0035] As used throughout this disclosure, "substantially horizontal," particularly when referring to substrate orientation, is understood to allow deviations of ±20° or less (e.g., ±10° or less) from the horizontal direction or orientation. As used throughout this disclosure, "substantially vertical," particularly when referring to substrate orientation, is understood to allow deviations of ±20° or less (e.g., ±10° or less) from the vertical direction or orientation. For example, such deviations from the vertical orientation may be permissible because a substrate support with a deviation from the vertical orientation may produce a more stable substrate position, or a downward-facing substrate orientation may even better reduce particle size on the substrate during deposition. However, substrate orientation is considered substantially vertical, for example, during layer deposition processes. Generally, horizontal and vertical substrate orientations can be different, where horizontal or vertical orientations may include deviations as described above.

[0036] Specifically, as used throughout this disclosure, terms such as “vertical direction” or “vertical orientation” are understood to distinguish between “horizontal direction” and “horizontal orientation”. The vertical direction is substantially parallel to gravity.

[0037] According to the embodiments described herein, the substrate can be mounted on the substrate support in a substantially horizontal orientation. (See reference...) Figure 2A The substrate lifting pins, described in more detail, can be used to load or unload substrates in a horizontal orientation of the substrate support 100. According to some embodiments that can be combined with other embodiments described herein, substrate transfer or conveying can be provided in a substantially horizontal position, particularly a horizontal position, i.e., unloading a processed substrate from the substrate support or loading a substrate to be processed onto the substrate support. For example, lifting pin assemblies, such as pin arrays, can be used.

[0038] Figure 2A The substrate support 100 is shown. Figure 2B It shows Figure 2A An enlarged portion of the substrate support 100 is shown. The substrate support 100 includes a substrate support body 140. Multiple openings, such as a first opening 212, are provided through the substrate support body 140. A lifting pin assembly 280 having a lifting pin 282 moves up and down to lift the substrate 20 from the front side 142 of the substrate support 100. Figure 2A The lifting pin assembly 280 in the upper position is shown, wherein the base plate 20 is supported by the lifting pin 282. Figure 2B The lifting pin assembly 280 in the lower position is shown, wherein the substrate 20 is supported by the support surface of the substrate support.

[0039] According to some embodiments that can be combined with other embodiments described herein, a plurality of first openings 112 are provided in the front side of the substrate support body 140. The plurality of first openings 112 are connected to a gas conduit 110. Therefore, gas can be supplied to the front side 142 of the substrate support body through the first openings 112. Figure 2B As shown, the gas supplied at the front side 142 (i.e., between the front side of the ESC and the substrate 20) may potentially flow through the opening 212 for the lifting pin 282. To prevent cooling gas from flowing through the substrate support, a protrusion 242 is provided. The protrusion 242 provides a barrier or dam for the cooling gas. According to some embodiments that may be combined with other embodiments described herein, the protrusion or barrier may have a ring shape (e.g., a ring surrounding one of the first openings 212). The first opening is provided in the substrate support 100 to allow the use of the pin array, through which the bearing lifting pin is guided to support the substrate during loading or unloading. Cooling gas barriers (or cooling gas “dams”) are formed around each pin hole to retain cooling gas (e.g., helium) between the substrate and the ESC. Therefore, no cooling is provided in the pin hole region, thus preventing the formation of hot spots.

[0040] According to some embodiments, which can be combined with other embodiments described herein, the substrate support surface of the substrate support body, i.e. the front side of the substrate support body, comprises at least two different zones. In a first zone of the at least two different zones, a cooling gas such as helium can be provided between the substrate support surface of the substrate support 100 and the substrate. Thus, the first zone is a cooling zone. In a second zone of the at least two different zones, the contact of the cooling gas is prevented by the protrusions or barriers. Thus, the second zone is an un-cooled zone. The un-cooled zone can be referred to as a hot spot.

[0041] In view of the above, a substrate supported by the substrate support 100 as described herein can comprise a first zone having a first substrate temperature and a second zone having a second substrate temperature, wherein the second substrate temperature is higher than the first substrate temperature. In view of a predetermined temperature limit for processing the substrate, the temperature limit can be controlled with respect to the second substrate temperature of the second zone. According to some embodiments, which can be combined with other embodiments described herein, the substrate support is configured to measure the temperature in the first zone, i.e. the cooling zone, and the second zone, i.e. the hot spot.

[0042] According to some embodiments, which can be combined with other embodiments described herein, a plurality of second protrusions can be provided on the front side of the substrate support body. The plurality of second protrusions is configured for temperature measurement. For example, Figure 2B An exemplary protrusion 244 is shown. The protrusion 244 encloses a surface 246 at which a temperature sensor, such as the first temperature sensor 150, is provided. Additionally or alternatively, the exemplary protrusion 244 can enclose a surface 245 of the substrate support body. The temperature of the surface 245 enclosed by the protrusion 244 can be measured, for example, with a radiation temperature sensor, e.g. an infrared temperature sensor. For example, the temperature sensor 150 can be utilized. Figure 1 A second temperature sensor 155 is shown. According to embodiments of the present disclosure, a plurality of second protrusions is provided on the front side of the substrate support body to create a zone corresponding to a hot spot of the substrate 20. Thus, the temperature can be measured at a first zone, i.e. a cooling zone, and a second zone, i.e. a hot spot zone.

[0043] According to one embodiment, a substrate support for supporting a substrate in a vacuum processing system is provided. The substrate support comprises a substrate support body having a front side for supporting a substrate and a back side opposite the front side, and a chuck assembly in or at the back side of the substrate support body. Further, a plurality of first openings is provided in the front side, wherein the plurality of first openings is in fluid communication with a gas conduit. A plurality of second openings is provided through the substrate support body, wherein the plurality of second openings is configured for a plurality of lift pins supporting the substrate during loading or unloading. A plurality of first protrusions is provided on the front side, each first protrusion at least partially enclosing a second opening of the plurality of second openings. The substrate support further comprises a plurality of second protrusions on the front side, the plurality of second protrusions being configured for temperature measurements. According to some embodiments, the plurality of first protrusions can be configured to provide a barrier for cooling gas.

[0044] Figure 2C A schematic front view of a substrate support 100 is shown. A measurement grid of a temperature measurement area is shown. According to some embodiments, which can be combined with other embodiments described herein, a plurality of first areas 286 with first temperature measurements is provided. The plurality of first areas is cooled with cooling gas. In particular, no barrier for cooling gas is provided at the first areas. According to some embodiments, which can be combined with other embodiments described herein, the first areas cooled with cooling gas can be measured with temperature sensors. The temperature sensors can be provided within or at the substrate support 100, in particular between the front side 142 and the substrate 20, as exemplarily shown by first temperature sensors 150. Additionally or alternatively, the temperature sensors can be provided separately from the substrate support, as exemplarily shown by second temperature sensors 155 shown. According to some embodiments, which can be combined with other embodiments described herein, the temperature sensors can be thermocouples or infrared temperature sensors. Figure 1

[0045] Figure 2C Further, a second area 284 with second temperature measurements is provided on the surface of the substrate support. In particular, the second areas can be distributed over the area of the substrate receiving surface of the substrate support 100. The second areas comprise protrusions 244, e.g. barriers for cooling gas. Thus, temperature measurements at hot spots on the substrate 20 can be provided.

[0046] ​According to some embodiments, which can be combined with other embodiments described herein, the temperature sensor 150 can be disposed within a substrate support body of the substrate support. For example, the temperature sensor can be a thermocouple. In particular, the thermocouple can be movably supported within a recess of the substrate support body and can be spring loaded. The substrate support without a substrate can have a surface of the thermocouple protruding from a front side 142 of the substrate support body. The thermocouple can protrude from the surface by a force provided by a spring or other resilient element. When a substrate is loaded, the substrate counteracts the force of the spring or resilient element and pushes the thermocouple into the recess of the substrate support body. Thus, a good thermal contact between the temperature sensor and the substrate can be provided.

[0047] According to some embodiments of the present disclosure, which can be combined with other embodiments described herein, the substrate support or substrate support body comprises a plurality of first openings. The plurality of first openings is in fluid communication with a gas conduit for a cooling gas. The substrate support or substrate support body further comprises a plurality of second openings. The plurality of second openings is configured for pins of a pin array. The substrate support or substrate support body further comprises a plurality of third openings or recesses for receiving a temperature sensor and a plurality of fourth openings or further recesses for receiving a temperature sensor. The plurality of second openings is provided with protrusions or barriers for the cooling gas, as described herein, and the plurality of third openings (or recesses) is provided with protrusions or barriers for the cooling gas, as described herein. The plurality of fourth openings can not be provided with barriers for the cooling gas. Thus, a first group of temperature sensors can measure a substrate temperature at a substrate position with a cooling gas barrier and a second group of temperature sensors can measure a substrate temperature at a substrate position without a cooling gas barrier.

[0048] As described above, embodiments of the present disclosure comprise a plurality of first protrusions on the front side, wherein the plurality of first protrusions is associated with openings for a pin array. According to some embodiments, which can be combined with other embodiments described herein, at least one of the plurality of second protrusions at least partially surrounds a portion of a surface of the front side. In particular, at least one of the plurality of second protrusions can surround or at least partially surround a temperature sensor, e.g. a thermocouple. According to examples described herein, the at least one second protrusion is configured to provide a barrier for a cooling gas. According to some embodiments, which can be combined with other embodiments described herein, the protrusion or barrier can comprise an area, e.g. an annular area, protruding 0.5 / 10 mm or more 5 / 10 mm or less from a substrate receiving surface of the front side of the substrate support body.

[0049] Figure 3AA substrate processing system 300 is shown. The substrate processing system 300 can be a cluster system having a transfer chamber 320. The transfer chamber 320 can be a central transfer chamber. A robot 322 can be at least partially disposed within the transfer chamber 320. The robot 322 can have a robotic arm 354. The robot 322 can transfer substrates between chambers coupled to the transfer chamber 320. At least one loading locking chamber 305 can be coupled to the transfer chamber 320. Figure 3A Two loading and locking chambers 305 coupled to the transfer chamber 320 are shown. One or more vacuum processing chambers 310 may be coupled to the transfer chamber 320. A robot 322 may transfer substrates between the loading and locking chambers and the deposition chambers, or between different deposition chambers attached to the transfer chamber 320.

[0050] The deposition apparatus or processing chamber 310 includes a vacuum chamber. Additionally, the transfer chamber 320 can be a vacuum transfer chamber. Therefore, substrates can be transported under vacuum, from the loading and locking chamber to the transfer chamber, from the transfer chamber to two vacuum chambers of the deposition apparatus, and from the vacuum chamber of the first deposition apparatus to the vacuum chamber of another deposition apparatus.

[0051] The devices and systems described herein are configured for mobility and handling, particularly those with a capacity of 1m. 2 A large-area substrate, or a substrate with a larger surface area. The term "substrate" may specifically include substrates like glass substrates, such as glass sheets. Additionally, a substrate may include slices of wafers, transparent crystals such as sapphire, etc. However, the term "substrate" may encompass other substrates that may be non-flexible or flexible, such as foils or rolls. A substrate may be formed from any material suitable for material deposition.

[0052] Figure 3A A substrate processing system 300 comprising one or more vacuum processing chambers 310 according to the present disclosure is schematically illustrated. According to embodiments of the present disclosure, the one or more vacuum processing chambers 310 are intended for depositing material on a substrate and include a vacuum chamber and / or a sputtering source region. A deposition source array may be provided, configured to deposit material on the substrate at the processing region in a horizontal orientation. The substrate processing system 300 further includes a transfer chamber 320, particularly a vacuum transfer chamber coupled to one or more deposition apparatuses.

[0053] Figure 3AA load lock chamber 305 is further shown. A vacuum transfer chamber 320 is coupled to one or more deposition apparatuses. The vacuum transfer chamber can move a substrate to one or more vacuum chambers through an opening, in particular a horizontal slit opening. The load lock chamber 305 is configured to receive a substrate at atmospheric pressure or at a non-vacuum condition A and then transfer the substrate into the vacuum transfer chamber at a vacuum condition V. Vice versa, the load chamber can also receive a substrate from the transfer chamber at a vacuum condition V and provide the substrate at atmospheric pressure or at a non-vacuum condition A.

[0054] According to yet another embodiment, one or more further processing chambers can be coupled to the vacuum transfer chamber, e.g. the central transfer chamber. In particular, the one or more further processing chambers can be selected from a heating chamber coupled to the transfer chamber, a cooling chamber coupled to the transfer chamber, a pre-clean chamber coupled to the transfer chamber, a storage chamber coupled to the transfer chamber, an inspection chamber coupled to the transfer chamber, and a CVD chamber coupled to the transfer chamber. One or more of the above-mentioned chambers of the same type and / or of different types can be coupled to the central transfer chamber. The inspection chamber may, for example, measure a thickness of a layer deposited in a previous deposition process or can control a thickness of one or more layers before unloading the substrate from the processing system. A control of the layer thickness can be provided. The cleaning or pre-cleaning chamber can remove oxides from, for example, a metal layer or can remove photoresist residues from a previous manufacturing step.

[0055] Figure 3B A deposition apparatus is shown. The deposition apparatus comprises a vacuum chamber 311. According to embodiments of the present disclosure, the vacuum chamber 311 can comprise various segments. The segments can be defined by the function of the segments, i.e. some segments or parts of segments can be fixedly connected or integrally formed with adjacent segments. Dividing the vacuum chamber into multiple segments can reduce the cost of ownership.

[0056] As Figure 3B The vacuum chamber 311 shown exemplarily comprises a source frame segment 312. The source frame segment can be a fixed segment in a fixed position relative to the processing system, e.g. relative to the central transfer chamber. The source frame segment is configured to support source assemblies and / or source support assemblies, respectively. As Figure 3B shown, a plurality of sputter cathodes 350 and a plurality of anodes 352 are arranged in the source frame segment. Alternatively, other sources, such as an evaporation source, a jet source or a CVD source, can be coupled to the source frame segment.

[0057] An upper lid assembly 314 is arranged above the source frame segment 312. The upper lid assembly 314 can be removed from the source frame segment, e.g. for maintenance of components arranged in the upper lid assembly and / or for maintenance of components of the source assemblies or source support assemblies.

[0058] A substrate handling section 316 is disposed below the source frame section. The substrate handling section 316 includes or houses components for substrate handling, substrate alignment, substrate masking, substrate support, etc. In particular, the substrate support 100 can be a substrate support table and can be provided in accordance with any of the embodiments of the present disclosure.

[0059] As shown in FIG. 2, the vacuum chamber 210 can be supported by a pedestal 318. The pedestal 318 can include three or more supports. In particular, the pedestal can support at least the source frame section 312.

[0060] According to some embodiments, a deposition apparatus or vacuum processing chamber for large area substrate processing in a cluster tool system is provided. The deposition apparatus includes a vacuum chamber. The deposition apparatus includes a source support assembly. For the example of a sputter source array, the source support assembly includes a first set of cathode drive units, each cathode drive unit of the first set of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, and a second set of cathode drive units, each cathode drive unit of the second set of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, the first set of cathode drive units and the second set of cathode drive units coupled to a source frame section of the vacuum chamber.

[0061] The deposition apparatus further includes a substrate support 100 within the substrate handling section and an actuator coupled to the substrate support to move the substrate support and the pin array vertically relative to each other.

[0062] Figure 3B A substrate support 100 and an actuator 322 coupled to the substrate support 100 are shown. The actuator 322 can be a linear actuator or driver configured to move the substrate support 100 vertically. For example, Figure 3B A substrate support 100 in a first position below an upper end of the substrate support pins or lift pins 282 is shown. The actuator 322 can move the support 100 to a second position, i.e. an upper position, in which the substrate support is positioned above the upper end of the substrate support pins. When the substrate support is moved from the first position to the second position, a substrate disposed on the substrate support pins 282 will be contacted by the substrate support. Thus, by lifting the substrate support from the first position to the second position, a substrate can be disposed on the substrate support for material deposition. Additionally, for example, after deposition, by lowering the substrate support holding the substrate from the second position to the first position, the substrate can be disposed on the substrate support pins or lift pins 282.

[0063] The substrate support 100 functions as a table to support a substrate during deposition of a material layer on the substrate. If the table is moved to the upper position, i.e. the second position, a substrate can be disposed below the edge exclusion mask 330. Figure 3BThe illustrated substrate support is a substrate support according to embodiments of the present disclosure. The substrate support can include an electrostatic chuck.

[0064] According to embodiments, a substrate support, e.g., a substrate support table, for supporting a substrate in a vacuum processing system is provided. The substrate support includes a substrate support body having a front side for supporting a substrate and a back side opposite the front side. A chuck assembly is disposed in or at the back side of the substrate support body. The substrate support includes a plurality of first openings in the front side in fluid communication with a gas conduit and a plurality of second openings through the substrate support body configured for supporting a plurality of lift pins of the substrate during loading or unloading. The substrate support includes a plurality of first protrusions on the front side, each first protrusion at least partially enclosing a second opening of the plurality of second openings, and a plurality of second protrusions on the front side configured for temperature measurement. According to some embodiments, the substrate support can further include at least one of a plurality of third openings or a plurality of recesses, each third opening or recess at least partially enclosed by a second protrusion of the plurality of second protrusions and configured to each receive a first temperature sensor, and a plurality of fourth openings or a plurality of further recesses configured to receive a second temperature sensor.

[0065] Figure 3C A schematic view of a processing system 300 for processing a substrate according to embodiments described herein is exemplarily shown. In particular, the processing system can be a material deposition system. The processing system includes a load station 372, a vacuum processing chamber 390, and a load lock chamber 380 between the load station and the vacuum processing chamber. The load station is configured for loading a substrate horizontally on a carrier according to embodiments described herein, e.g., with a lift pin array. The load station 372 can be an atmospheric chamber 370, i.e., a chamber providing atmospheric pressure. The processing system can further include one or more transfer chambers 382.

[0066] The processing of the substrate can be understood as, for example, transferring material to the substrate, etching the substrate, pre-treating the substrate, heating the substrate, during annealing or other substrate processing. For example, a deposition material can be deposited on the substrate, e.g., by a CVD process or a PVD process, such as sputtering or evaporation. The substrate 10 can include a deposition material receiving side. The deposition material receiving side of the substrate can be regarded as the side of the substrate facing a deposition source. Further, the processing of the substrate can also include transporting the substrate from one chamber to another chamber of the processing system.

[0067] According to embodiments, as Figures 3A to 3CThe processing system 300 shown can be configured for CVD or PVD processes, such as sputtering deposition. In another example, the system can be configured for evaporating organic materials, for example, for manufacturing OLED devices. For example, the processing system can be a processing system for large-area substrates (e.g., for display manufacturing). Specifically, processing systems with structures and methods according to embodiments described herein are provided for processing substrates having an area of, for example, 1m². 2 Or a large-area substrate with an area of ​​approximately 1.4m. For example, a large-area substrate could be a substrate with an area of ​​approximately 1.4m. 2 The 5th generation, with a surface area of ​​(1.1m × 1.3m), corresponds to approximately 4.29m. 2 The 7.5th generation with a surface area of ​​(1.95m × 2.2m) corresponds to approximately 5.7m. 2 The 8.5th generation, or even the 2.2m × 2.5m surface area, corresponds to approximately 8.7m. 2 The 10th generation has a surface area of ​​(2.85m × 3.05m). Higher generations (such as the 11th and 12th generations) and corresponding surface areas can be implemented similarly.

[0068] According to some embodiments that may be combined with other embodiments described herein, the processing system 300 is configured for all applications, such as for a touch screen panel (TSP).

[0069] According to the embodiments described herein, the processing system, i.e., the vacuum processing chamber, may include one or more material deposition sources 392. The one or more material deposition sources may be sources for sputtering or evaporating one or more materials on a substrate.

[0070] According to some embodiments that can be combined with other embodiments described herein, one or more material deposition sources 392 may be controlled by a controller 350. Specifically, the controller 350 may be used to adjust the sputtering power or other power related to the deposition rate of the material deposition source. The controller 350 may be further connected to a temperature sensor at the carrier supporting the treated substrate and / or a temperature sensor on the carrier supporting the treated substrate. Therefore, the deposition rate and the corresponding thermal load on the substrate can be adjusted based on temperature measurements, particularly temperature measurements in the first zone (cooling zone) and the second zone (hotspot zone).

[0071] According to an embodiment, the processing system can process the substrate under vacuum conditions. Vacuum conditions as used herein include those below 10... -1 millibars or less than 10 -3 Within the range of millibars, such as 10 -7 millibars to 10 -2pressure conditions. Vacuum conditions can be applied by using a vacuum pump or other vacuum generating techniques. For example, the vacuum conditions in a load lock chamber can be switched between atmospheric pressure conditions and sub-atmospheric pressure conditions (e.g., in the range of 10 -1 millitorr or less). To transfer a substrate into a high vacuum chamber, the substrate can be inserted into a load lock chamber which is set at atmospheric pressure, the load lock chamber can be sealed, and subsequently, it can be set at a sub-atmospheric pressure in the range of 10 -1 millitorr or less. Subsequently, an opening between the load lock chamber and the high vacuum chamber can be opened, and the substrate can be inserted into the high vacuum chamber to be transported into a processing chamber.

[0072] According to embodiments, the substrate processing system can comprise a transport system 385. The transport system can be configured to transport one or more carriers. The one or more carriers can be configured to transport one or more substrates 10. In particular, the transport system 385 can comprise a transport path extending through the processing system. The one or more carriers can be transported through the processing system with or without one or more substrates 10 loaded therein. The transport system can comprise a magnetic levitation transport system and / or a mechanical transport system.

[0073] According to embodiments, which can be combined with any other embodiments described herein, the processing system can comprise a carrier comprising a chuck assembly as described with respect to Figure 1 、 Figure 2A 、 Figure 2B and Figure 2C The chuck assembly can hold a substrate and be configured for in-situ temperature measurement of the substrate, in particular in a first zone being a cool down zone and a second zone being a hot spot zone. According to some embodiments, which can be combined with other embodiments described herein, the substrate temperature measurement allows for adjusting the deposition power depending on the substrate temperature.

[0074] According to some embodiments, which can be combined with other embodiments described herein, a fixed value of the deposition power (e.g., sputter power) can be provided. The substrate temperature is measured and / or monitored to obtain the highest power setting while keeping the substrate below a predetermined temperature limit, e.g., 100°C or less, in particular 80°C or less.

[0075] According to some embodiments, which can be combined with other embodiments described herein, a real-time power control, e.g., a real-time sputter power control, can be provided. The processing time can be reduced, and thus, the tact time can be reduced. For example, according to some embodiments, which can be combined with other embodiments described herein, a closed loop control as exemplarily shown by a controller 350 as shown in Figure 3C may be provided. The controller 350 and the embodiments related to the controller described herein can similarly provide for a closed loop control for Figure 3A andFigure 3B The sputter power can be adjusted based on one of a current substrate temperature or a measured substrate temperature, according to some embodiments which can be combined with other embodiments described herein. Thus, if the hottest substrate zone is below a predetermined temperature limit, the sputter power can be increased. If the hottest substrate zone starts above a predetermined temperature limit, the sputter power can be decreased.

[0076] Embodiments of the present disclosure allow for temperature measurements without disturbing the cooling, in particular in the cooling zone and the hot spot zone. More accurate temperature control can be provided. According to some embodiments, the ESC is provided with a temperature sensor. Thus, a substrate measurement can be provided for each substrate loaded on the ESC, for example without breaking the vacuum. In addition, the cooling efficiency of the cooling gas, e.g. helium, is maintained. The process recipe can be adapted according to the measurements.

[0077] Figure 4 A flow chart of a method 400 of processing a substrate in a vacuum processing system according to embodiments described herein is shown. The method 400 comprises, in block 410, loading a substrate on a substrate support having a substrate support body and a chuck assembly, the substrate support body having a front side. In operation 420, at least a portion of the substrate loaded on the substrate support is cooled with a cooling gas to provide a cooled substrate portion. The method further comprises, in block 430, measuring a first substrate temperature in a first zone within the cooled substrate portion while the substrate is loaded on the substrate support, and in block 440, measuring a second substrate temperature in a second zone different from the first zone.

[0078] According to some embodiments which can be combined with other embodiments described herein, the second zone is an uncooled zone. For example, the second zone is at least partially enclosed by a protrusion on the front side of the substrate support body, in particular completely enclosed by the protrusion. The protrusion forms a barrier for the cooling fluid, e.g. a He dam.

[0079] Cooling a substrate, such as cooling at least a portion of a substrate loaded on a substrate support, can comprise flowing a cooling gas through a plurality of first openings in a front side of a substrate support body of the substrate support. The cooled portion of the substrate is outside a barrier formed by a protrusion and enclosing, for example, an opening of the substrate support body for a pin array for loading or unloading a substrate on a substrate support substrate support substrate, such as an ESC.

[0080] According to some embodiments, which can be combined with other embodiments described herein, a layer is deposited on a substrate. For deposition, a deposition power can be provided. For example, the layer can be sputtered on the substrate with a sputtering power, such as an adjustable sputtering power. According to some embodiments, the deposition power, e.g., the sputtering power, can be based on at least one of the first substrate temperature and the second substrate temperature. In particular, the sputtering power or the deposition power can be based on the higher of the first temperature and the second temperature. Since the second temperature is in the uncooled zone of the substrate, the second temperature is typically higher than the first temperature. According to some embodiments, which can be combined with other embodiments described herein, a method of processing a substrate can be provided with a substrate support according to embodiments of the disclosure.

[0081] According to embodiments described herein, the method can further include supporting a substrate support and a substrate in a processing chamber, such as the processing system 300 shown in Figure 3A 、 Figure 3B and Figure 3C . The substrate support can carry the substrate for processing the substrate in the processing chamber. The method can further include unloading the substrate from the substrate support. Unloading the substrate can include pushing the substrate away from the substrate support by operation of an array of pins, e.g., in a horizontal orientation of the substrate support. The back side of the substrate can be the side of the substrate facing the substrate support surface.

[0082] According to some embodiments, which can be combined with other embodiments described herein, a vacuum processing system can include a controller 350, as shown in Figure 3CA controller 350 is shown, by way of example. The controller 350 can be connected to one or more deposition sources and to one or more temperature sensors connected to a substrate support. The controller 350 can include a central processing unit (CPU), memory, and, for example, support circuits. To facilitate control of substrate processing, the CPU can be one of any form of a general purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors. The memory is coupled to the CPU. The memory, or computer-readable media, can be one or more of readily available memory such as random access memory, read only memory, hard drives, or any other form of digital storage, local or remote. The support circuits can be coupled to the CPU as is common in a computer or as desired for purposes of the controller 350. These circuits include cache, power supplies, clock circuits, input / output circuitry and subsystems, and the like. Substrate processing instructions are typically stored in the memory as software routine, which typically is referred to as a recipe. The software routine can also be stored and / or executed by a second CPU (not shown) that is remotely located from the hardware being controlled the CPU. When executed by the CPU, the software routine transforms the general purpose computer into a special purpose computer (controller) that controls substrate processing, for example, control deposition power based on one or more of measured temperatures of the substrate. Although the method and / or process of the present disclosure is / are discussed as being implemented as software routines, some of the method steps disclosed therein can be implemented in hardware, as well as by software controllers. As such, the present disclosure can be implemented as software on a computer system, as hardware, or as a combination of software and hardware. The controller can perform or conduct the method of processing a substrate according to embodiments of the present disclosure.

[0083] According to embodiments, a deposition source is provided. The deposition source comprises a crucible and a controller having a processor and a memory storing instructions that, when executed by the processor, cause the deposition source to perform a method according to embodiments described herein.

[0084] According to embodiments, a processing system for processing a substrate in a vacuum chamber is provided. The processing system comprises a load station, which is specifically configured for horizontal substrate loading, and a vacuum chamber. In addition, the processing system comprises a controller comprising a processor and a memory storing instructions that, when executed by the processor, cause performing a method according to embodiments of the present disclosure.

[0085] Embodiments of the present disclosure advantageously provide an improved substrate support and an improved method of measuring a substrate temperature. Improved control of deposition power can be provided. According to one advantage, the tact time can be reduced without damaging a layer, e.g. an OLED layer, already provided on the substrate, in particular for TSP applications.

[0086] While the foregoing is directed to implementations, other and further implementations may be devised without departing from the basic scope, and the scope thereof is determined by the claims that follow.

[0087] In particular, this written description uses examples to disclose the disclosure, including the best mode, and also to enable any person skilled in the art to practice the claimed subject matter, including making and using any devices or systems and performing any incorporated methods. Although specific implementations have been disclosed herein, other and further implementations may be devised without departing from the basic scope, and the scope thereof is determined by the claims that follow.

Claims

1. A substrate support for supporting a substrate in a vacuum processing system, the substrate support comprising: a substrate support body having a front side for supporting the substrate and a back side opposite the front side; a chuck assembly in or at the back side of the substrate support body; a plurality of first openings in the front side, the plurality of first openings in fluid communication with a gas conduit; a plurality of second openings through the substrate support body configured for supporting a plurality of lift pins of the substrate during loading or unloading; a plurality of first protrusions on the front side, each first protrusion at least partially enclosing a second opening of the plurality of second openings, wherein the plurality of first protrusions are configured to provide a barrier for a cooling gas to prevent the cooling gas from flowing through the substrate support; and a plurality of second protrusions on the front side configured for temperature measurement.

2. The substrate support of claim 1, further comprising at least one of: a plurality of third openings or a plurality of recesses, each third opening or recess at least partially enclosed by a second protrusion of the plurality of second protrusions and each configured to receive a first temperature sensor; and a plurality of fourth openings or a plurality of further recesses configured to receive a second temperature sensor.

3. The substrate support of claim 2, wherein at least one second protrusion of the plurality of second protrusions at least partially encloses a portion of a surface of the front side.

4. The substrate support of claim 2 or 3, wherein at least one second protrusion of the plurality of second protrusions at least partially encloses the first temperature sensor.

5. The substrate support of claim 3, wherein the at least one second protrusion is configured to provide a barrier for a cooling gas.

6. The substrate support of claim 2, wherein the first temperature sensor is a thermocouple or an infrared temperature sensor.

7. The substrate support of claim 6, wherein the at least one second protrusion is configured to provide a barrier for a cooling gas.

8. A method for processing a substrate in a vacuum processing system, the method comprising: loading the substrate on a substrate support, the substrate support having a substrate support body and a chuck assembly, the substrate support body having a front side; cooling at least a portion of the substrate loaded on the substrate support with a cooling gas to provide a cooled substrate portion; measuring a first substrate temperature in a first zone within the cooled substrate portion while the substrate is loaded on the substrate support; and measuring a second substrate temperature in a second zone different from the first zone, wherein the second zone is at least partially enclosed by a protrusion on the front side of the substrate support body to prevent the cooling gas from flowing through the substrate support. ​ 9. The method of claim 8, wherein the second zone is an uncooled zone.

10. The method of claim 8 or 9, wherein the cooling comprises: flowing the cooling gas through a plurality of first openings in the front side of the substrate support body of the substrate support.

11. The method of claim 8 or 9, further comprising: depositing a layer on the substrate with a deposition power.

12. The method of claim 11, further comprising: adjusting the deposition power based on at least one of the first substrate temperature and the second substrate temperature.

13. The method of claim 8, wherein the substrate support is the substrate support of claim 1 or 2.

14. A processing system for processing a substrate in a vacuum chamber, comprising: a load station; a vacuum processing chamber; and a controller comprising: a processor and a memory, the memory storing instructions that, when executed by the processor, cause performance of the method of claim 9 or 10.

15. The processing system of claim 14, wherein the load station is configured for horizontal substrate loading. ​

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