Wireless transceiver and matching circuit for use therewith

Abstract

The application provides a wireless transceiver and a matching circuit used thereby. The wireless transceiver comprises an antenna unit, a transmitting circuit, a first matching circuit, a second matching circuit and a receiving circuit. The first matching circuit is electrically connected to the antenna unit and the transmitting circuit. The second matching circuit is electrically connected to the antenna unit and the receiving circuit. In the first matching circuit, a first capacitor is electrically connected to the antenna unit and a first switch component. The first switch component is electrically connected to a ground terminal, a first active component with a first threshold voltage is connected in parallel to the first switch component, and a first inductor of an inductor pair is electrically connected to the antenna unit and the ground terminal. A second inductor of the inductor pair is electrically connected to the transmitting circuit. When the cross voltage of the first active component is greater than the first threshold voltage, the first active component is turned on to reduce the cross voltage of the first switch component, thereby protecting the first switch component.

Description

Technical Field

[0001] This application relates to a wireless transceiver, and more particularly to a wireless transceiver with a protective switching component and the first matching circuit and second matching circuit used therein. Background Technology

[0002] To transmit and receive wireless radio frequency signals, a wireless transceiver device is typically used. A wireless transceiver device includes at least a transmitting circuit (TX) and a receiving circuit (RX). The transmitting and receiving circuits are usually designed separately and combined with an antenna through appropriate matching circuitry to transmit or receive wireless radio frequency signals.

[0003] However, in the matching circuit architecture used in conjunction with the transmitting or receiving circuit, when a large instantaneous current is generated, the low impedance of the inductor pair (also known as the balun circuit) in the transmitting circuit connected to the ground terminal is mainly used as the discharge conduction path. However, other components in the matching circuit, such as capacitors and switching components, may still be damaged because they are subjected to extremely large voltage. Summary of the Invention

[0004] This application provides a wireless transceiver device, comprising an antenna unit, a transmitting circuit, a first matching circuit, a second matching circuit, and a receiving circuit. The antenna unit is used to transmit a first radio frequency (RF) signal or receive a second RF signal. The transmitting circuit is used to generate the first RF signal. The first matching circuit is electrically connected to the antenna unit and the transmitting circuit, transmitting the first RF signal to the antenna unit. The first matching circuit includes a first capacitor, a first switching assembly, a first active assembly having a first threshold voltage, and an inductor pair. One end of the first capacitor is electrically connected to the antenna unit; the first switching assembly is electrically connected to the other end of the first capacitor and a ground terminal; the first active assembly is connected in parallel with the first switching assembly. When the voltage across the first active assembly is greater than the first threshold voltage, the first active assembly turns on and conducts, reducing the voltage across the first switching assembly; the inductor pair has a first inductor and a second inductor. The first inductor is electrically connected to the antenna unit and the ground terminal to connect the first capacitor and the first switching assembly in parallel, and the second inductor is electrically connected to the transmitting circuit. The second matching circuit is electrically connected to the antenna unit to transmit the second RF signal. The receiving circuit is electrically connected to the second matching circuit to receive the second radio frequency signal from the second matching circuit.

[0005] In some embodiments, the second matching circuit includes a third inductor, a second capacitor, and a second switching component. One end of the third inductor is electrically connected to the antenna element. The second capacitor is electrically connected to the other end of the third inductor and the receiving circuit. One end of the second switching component is electrically connected between the third inductor and the second capacitor, and the other end is electrically connected to ground. Furthermore, the second matching circuit includes a second active component having a second threshold voltage. The second active component is connected in parallel with the second switching component. When the voltage across the second active component is greater than the second threshold voltage, the second active component turns on and conducts, causing the voltage across the second switching component to decrease.

[0006] In some embodiments, the second matching circuit includes a second capacitor, a third inductor, a second switching assembly, a second active assembly having a second threshold voltage, and a third switching assembly. One end of the second capacitor is electrically connected to the antenna element. The third inductor is electrically connected to the other end of the second capacitor and the receiving circuit. One end of the third capacitor is electrically connected between the second capacitor and the third inductor. One end of the second switching assembly is electrically connected to the third capacitor, and the other end is electrically connected to ground. The second active assembly is connected in parallel with the second switching assembly. When the voltage across the second active assembly is greater than the second threshold voltage, the second active assembly turns on and conducts, reducing the voltage across the second switching assembly. One end of the third switching assembly is electrically connected between the third inductor and the receiving circuit, and the other end is electrically connected to ground.

[0007] This application also provides a first matching circuit for a wireless transceiver, electrically connected between an antenna element and a transmitting circuit. The first matching circuit includes a first capacitor, a first switching assembly, a first active component having a first threshold voltage, and an inductor pair. One end of the first capacitor is electrically connected to the antenna element. The first switching assembly is electrically connected to the other end of the first capacitor and a ground terminal. The first active component is connected in parallel with the first switching assembly. When the voltage across the first active component is greater than the first threshold voltage, the first active component turns on and conducts, reducing the voltage across the first switching assembly. The inductor pair has a first inductor and a second inductor. The first inductor is electrically connected to the antenna element and the ground terminal to connect the first capacitor and the first switching assembly in parallel, and the second inductor is electrically connected to the transmitting circuit.

[0008] In some embodiments, the first active component is a P-type metal-oxide-semiconductor transistor (PMOS), a diode, or two diodes connected in reverse parallel.

[0009] This application further provides a second matching circuit for a wireless transceiver device, electrically connected between an antenna element and a receiving circuit. The second matching circuit includes a third inductor, a second capacitor, a second switching assembly, and a second active assembly having a second threshold voltage. One end of the third inductor is electrically connected to the antenna element. The second capacitor is electrically connected to the other end of the third inductor and the receiving circuit. One end of the second switching assembly is electrically connected between the third inductor and the second capacitor, and the other end is electrically connected to ground. The second active assembly is connected in parallel with the second switching assembly. When the voltage across the second active assembly is greater than the second threshold voltage, the second active assembly turns on and conducts, causing the voltage across the second switching assembly to decrease.

[0010] This application also provides a second matching circuit for a wireless transceiver, electrically connected between an antenna element and a receiving circuit. The second matching circuit includes a second capacitor, a third inductor, a second switching assembly, a second active component with a second threshold voltage, and a third switching assembly. One end of the second capacitor is electrically connected to the antenna element. The third inductor is electrically connected to the other end of the second capacitor and the receiving circuit. One end of the third capacitor is electrically connected between the second capacitor and the third inductor. One end of the second switching assembly is electrically connected to the third capacitor, and the other end is electrically connected to ground. The second active component is connected in parallel with the second switching assembly. When the voltage across the second active component is greater than the second threshold voltage, the second active component turns on and conducts, reducing the voltage across the second switching assembly. One end of the third switching assembly is electrically connected between the third inductor and the receiving circuit, and the other end is electrically connected to ground.

[0011] In some embodiments, the second active component is a P-type metal-oxide-semiconductor transistor, a diode, or two diodes connected in reverse parallel.

[0012] In summary, this application proposes a wireless transceiver device and its matching circuit, which connects an active component with a critical voltage in parallel with a switching component that is susceptible to damage from instantaneous high current. The active component is turned on and conducted by utilizing the voltage across the active component, thereby forming a low-impedance discharge path to ground, which reduces the voltage across the switching component and thus protects the switching component. Attached Figure Description

[0013] Figure 1 This is a circuit diagram of a wireless transceiver device according to an embodiment of this application.

[0014] Figure 2 This is a circuit diagram of a wireless transceiver device having a P-type metal-oxide-semiconductor transistor according to an embodiment of this application.

[0015] Figure 3 This is a circuit diagram of a wireless transceiver device with a diode according to an embodiment of this application.

[0016] Figure 4 This is a circuit diagram of a wireless transceiver device having two anti-parallel diodes according to an embodiment of this application.

[0017] Figure 5 This is a circuit diagram of a wireless transceiver device according to another embodiment of this application.

[0018] Figure 6 This is a circuit diagram of a wireless transceiver device having a P-type metal-oxide-semiconductor transistor according to another embodiment of this application.

[0019] Figure 7 This is a circuit diagram of a wireless transceiver device with a diode according to another embodiment of this application.

[0020] Figure 8 This is a circuit diagram of a wireless transceiver device having two anti-parallel diodes according to another embodiment of this application.

[0021] Figure 9 This is a circuit diagram of a wireless transceiver device according to another embodiment of this application.

[0022] Figure 10 This is a circuit diagram of a wireless transceiver device having a P-type metal-oxide-semiconductor transistor according to another embodiment of this application.

[0023] Figure 11 This is a circuit diagram of a wireless transceiver device with a diode according to another embodiment of this application.

[0024] Figure 12 This is a circuit diagram of a wireless transceiver device having two anti-parallel diodes according to another embodiment of this application. Detailed Implementation

[0025] The terms "first" and "second" as used herein are used to distinguish the components referred to, not to order or limit the differences between the components referred to, nor to limit the scope of this application. Furthermore, the terms "connection" as used herein refer to two or more components making direct physical or electrical contact with each other, or making indirect physical or electrical contact with each other.

[0026] Figure 1 For a circuit diagram of a wireless transceiver device according to an embodiment of this application, please refer to [link / reference]. Figure 1As shown, the wireless transceiver 10 includes an antenna unit 12, a first matching circuit 14, a transmitting circuit 16, a second matching circuit 18, and a receiving circuit 20. The antenna unit 12 is used to transmit a first radio frequency (RF) signal or receive a second RF signal. The antenna unit 12 further includes an antenna 121 and a switching circuit 122. The antenna 121 is electrically connected to the switching circuit 122 to switch between signal transmission and signal reception modes. The first matching circuit 14 is electrically connected to the antenna unit 12 and the transmitting circuit 16, transmitting the first RF signal to the antenna unit 12. In signal transmission mode, the transmitting circuit 16 generates the first RF signal, which is then transmitted through the first matching circuit 14 and the antenna unit 12. The second matching circuit 18 is electrically connected to the antenna unit 12 and the receiving circuit 20 to transmit the second RF signal. When the wireless transceiver 10 is in signal receiving mode, after the antenna unit 12 receives the second radio frequency signal, the second radio frequency signal is transmitted to the receiving circuit 20 for processing through the second matching circuit 18.

[0027] Please see Figure 1 As shown, in this embodiment, the first matching circuit 14 includes a first capacitor C1, a first switching component SW1, a first active component 141 having a first threshold voltage, and an inductor pair 142. One end of the first capacitor C1 is electrically connected to the antenna unit 12, and the other end is connected to the first switching component SW1. The first switching component SW1 is electrically connected to the other end of the first capacitor C1 and a ground terminal GND. One end of the first active component 141 is electrically connected to the first capacitor C1, and the other end is electrically connected to the ground terminal GND, so that the first active component 141 is connected in parallel with the first switching component SW1. When the voltage across the first active component 141 is greater than the first threshold voltage, the first active component 141 turns on and conducts, thereby reducing the voltage across the first switching component SW1 and thus protecting the first switching component SW1. The inductor pair 142 has a first inductor L1 and a second inductor L2. The first inductor L1 is electrically connected to the antenna unit 12 and the ground terminal GND, and is connected in parallel to the first capacitor C1 and the first switching component SW1. The second inductor L2 is electrically connected to the transmitting circuit 16.

[0028] Please see Figure 1 As shown, in this embodiment, the second matching circuit 18 includes a third inductor L3, a second capacitor C2, and a second switching component SW2. One end of the third inductor L3 is electrically connected to the antenna unit 12, and the other end is electrically connected to the second capacitor C2. The two ends of the second capacitor C2 are electrically connected to the other end of the third inductor L3 and the receiving circuit 20, respectively. One end of the second switching component SW2 is electrically connected between the third inductor L3 and the second capacitor C2, and the other end is electrically connected to the ground terminal GND.

[0029] In one embodiment, please also refer to Figure 1 and Figure 2 As shown, in the first matching circuit 14, the first active component 141 is a P-type metal-oxide-semiconductor transistor P1, such as... Figure 2 As shown, the P-type metal-oxide-semiconductor transistor P1 has a source, a gate, and a drain. P1 is connected in a diode-connected manner, meaning the source is connected between the first capacitor C1 and the first switching component SW1, while the gate and drain are simultaneously connected to ground GND, thus connecting P1 in parallel with the first switching component SW1. Since the gate and drain of P1 are at stable low potentials, when a large instantaneous current enters the antenna element 12, the source of P1 will swing with the energy. When the voltage across the source and gate of P1 exceeds the first critical voltage, P1 will conduct, forming a low-impedance discharge path to ground. This prevents a large current from flowing through the first switching component SW1, thereby protecting it.

[0030] In one embodiment, such as Figure 2 As shown, the first threshold voltage of the P-type metal-oxide-semiconductor transistor P1 is 0.3 to 0.4 volts.

[0031] In one embodiment, please also refer to Figure 1 and Figure 3 As shown, in the first matching circuit 14, the first active component 141 is a diode D1, as... Figure 3 As shown, the positive terminal of diode D1 is connected between the first capacitor C1 and the first switching component SW1, while the negative terminal is connected to the ground terminal GND, making diode D1 connected in parallel with the first switching component SW1. When a large instantaneous current enters the antenna element 12, the voltage across diode D1 will exceed the first critical voltage, causing diode D1 to conduct and form a low-impedance discharge path to ground. This prevents the large current from flowing through the first switching component SW1, thereby protecting the first switching component SW1.

[0032] In one embodiment, such as Figure 3 As shown, the first critical voltage of diode D1 is 0.7 volts.

[0033] In one embodiment, please also refer to Figure 1 and Figure 4 As shown, in the first matching circuit 14, the first active component 141 consists of two diodes D1 and D2 connected in anti-parallel, as follows: Figure 4As shown, the anode of diode D1 is connected between the first capacitor C1 and the first switching component SW1, while the cathode of diode D1 is connected to the ground terminal GND. The cathode of diode D2 is connected between the first capacitor C1 and the first switching component SW1, while the anode of diode D2 is connected to the ground terminal GND. This makes diodes D1 and D2 reverse polarities and simultaneously connected in parallel with the first switching component SW1, providing bidirectional protection. When a large instantaneous current enters the antenna element 12, the voltage across diode D1 will exceed the first critical voltage. Diode D1 will then conduct, forming a low-impedance discharge path to ground, thereby preventing the large current from flowing through the first switching component SW1 and thus protecting the first switching component SW1.

[0034] In some embodiments, the first switching component SW1 is an N-type metal-oxide-semiconductor transistor (NMOS).

[0035] Please see Figure 5As shown, the wireless transceiver 10 includes an antenna unit 12, a first matching circuit 14, a transmitting circuit 16, a second matching circuit 18, and a receiving circuit 20. The first matching circuit 14 includes a first capacitor C1, a first switching component SW1, a first active component 141 with a first threshold voltage, and an inductor pair 142. One end of the first capacitor C1 is electrically connected to the antenna unit 12, and the other end is connected to the first switching component SW1. The first switching component SW1 is electrically connected to the other end of the first capacitor C1 and a ground terminal GND. One end of the first active component 141 is electrically connected to the first capacitor C1, and the other end is electrically connected to the ground terminal GND, so that the first active component 141 is connected in parallel with the first switching component SW1. When the voltage across the first active component 141 is greater than the first threshold voltage, the first active component 141 turns on and conducts, reducing the voltage across the first switching component SW1, thereby protecting the first switching component SW1. Inductor pair 142 has a first inductor L1 and a second inductor L2. The first inductor L1 is electrically connected to the antenna element 12 and the ground terminal GND, and is connected in parallel with the first capacitor C1 and the first switching component SW1. The second inductor L2 is electrically connected to the transmitting circuit 16. The second matching circuit 18 includes a third inductor L3, a second capacitor C2, a second switching component SW2, and a second active component 181 having a second threshold voltage. One end of the third inductor L3 is electrically connected to the antenna element 12, and the other end is electrically connected to the second capacitor C2. The two ends of the second capacitor C2 are electrically connected to the third inductor L3 and the receiving circuit 20, respectively. One end of the second switching component SW2 is electrically connected between the third inductor L3 and the second capacitor C2, and the other end is electrically connected to the ground terminal GND. One end of the second active component 181 is electrically connected between the third inductor L3 and the second capacitor C2, and the other end is electrically connected to the ground terminal GND, so that the second active component 181 is connected in parallel with the second switching component SW2. When the voltage across the second active component 181 is greater than the second critical voltage, the second active component 181 is turned on and conducts, thereby reducing the voltage across the second switching component SW2 and thus achieving the effect of protecting the second switching component SW2.

[0036] In one embodiment, please also refer to Figure 5 and Figure 6 As shown, in the first matching circuit 14, the first active component 141 is a P-type metal-oxide-semiconductor transistor P1, and in the second matching circuit 18, the second active component 181 is a P-type metal-oxide-semiconductor transistor P2, as... Figure 6As shown, P-type metal-oxide-semiconductor transistor P1 has a source, a gate, and a drain. The source is connected between the first capacitor C1 and the first switching component SW1, while the gate and drain are simultaneously connected to the ground terminal GND, making P-type metal-oxide-semiconductor transistor P1 connected in parallel with the first switching component SW1. The source of P-type metal-oxide-semiconductor transistor P2 is connected between the third inductor L3 and the second capacitor C2, while the gate and drain of P-type metal-oxide-semiconductor transistor P2 are simultaneously connected to the ground terminal GND, making P-type metal-oxide-semiconductor transistor P2 connected in parallel with the second switching component SW2. Since the gates and drains of P-type metal-oxide-semiconductor transistors P1 and P2 are at stable low potentials, when a large instantaneous current enters the antenna element 12, the sources of P-type metal-oxide-semiconductor transistors P1 and P2 will swing with the energy. When the source-gate voltage of P-type metal-oxide-semiconductor transistor P1 is greater than the first critical voltage, P1 will conduct to form a low-impedance discharge path to ground, thereby preventing a large current from flowing through the first switching component SW1 and thus protecting the first switching component SW1. When the source-gate voltage of P-type metal-oxide-semiconductor transistor P2 is greater than the second critical voltage, P2 will conduct to form a low-impedance discharge path to ground, thereby preventing a large current from flowing through the second switching component SW2 and thus protecting the second switching component SW2.

[0037] In one embodiment, please also refer to Figure 5 and Figure 7 As shown, in the first matching circuit 14, the first active component 141 is a diode D1, and in the second matching circuit 18, the second active component 181 is also a diode D3, as... Figure 7 As shown, the anode of diode D1 is connected between the first capacitor C1 and the first switching component SW1, while the cathode is connected to the ground terminal GND, making diode D1 connected in parallel with the first switching component SW1. The anode of diode D3 is connected between the third inductor L3 and the second capacitor C2, while the cathode is connected to the ground terminal GND, making diode D3 connected in parallel with the second switching component SW2. When a large instantaneous current flows into the first matching circuit 14 of the antenna unit 12, the voltage across diode D1 will exceed the first critical voltage, and diode D1 will conduct, forming a low-impedance discharge path to ground, thereby preventing the large current from flowing through the first switching component SW1 and thus protecting the first switching component SW1. When a large instantaneous current flows into the second matching circuit 18 of the antenna unit 12, the voltage across diode D3 will exceed the second critical voltage, and diode D3 will conduct, forming a low-impedance discharge path to ground, thereby preventing the large current from flowing through the second switching component SW2 and thus protecting the second switching component SW2.

[0038] In one embodiment, please also refer to Figure 5 and Figure 8 As shown, in the first matching circuit 14, the first active component 141 consists of two diodes D1 and D2 connected in anti-parallel; in the second matching circuit 18, the second active component 181 consists of two diodes D3 and D4 connected in anti-parallel. Figure 8 As shown, the anode of diode D1 is connected between the first capacitor C1 and the first switching assembly SW1, and the cathode of diode D1 is connected to the ground terminal GND. The cathode of diode D2 is connected between the first capacitor C1 and the first switching assembly SW1, and the anode of diode D2 is connected to the ground terminal GND. This makes diodes D1 and D2 reverse polarities and simultaneously connected in parallel with the first switching assembly SW1 to provide bidirectional protection. The anode of diode D3 is connected between the third inductor L3 and the second capacitor C2, and the cathode of diode D3 is connected to the ground terminal GND. The cathode of diode D4 is connected between the third inductor L3 and the second capacitor C2, and the anode of diode D4 is connected to the ground terminal GND. This makes diodes D3 and D4 reverse polarities and simultaneously connected in parallel with the second switching assembly SW2 to provide bidirectional protection. When a large instantaneous current flows into the first matching circuit 14 of the antenna unit 12, the voltage across diode D1 will be greater than the first critical voltage. Diode D1 will conduct to form a low-impedance discharge path to ground, thereby preventing the large current from flowing through the first switching component SW1 and thus protecting the first switching component SW1. Similarly, when a large instantaneous current flows into the second matching circuit 18 of the antenna unit 12, the voltage across diode D3 will be greater than the second critical voltage. Diode D3 will conduct to form a low-impedance discharge path to ground, thereby preventing the large current from flowing through the second switching component SW2 and thus protecting the second switching component SW2.

[0039] In some embodiments, the first switching component SW1 is an N-type metal-oxide-semiconductor transistor (NMOS); the second switching component SW2 is an N-type metal-oxide-semiconductor transistor (NMOS).

[0040] Please see Figure 9As shown, the wireless transceiver 10 includes an antenna unit 12, a first matching circuit 14, a transmitting circuit 16, a second matching circuit 18, and a receiving circuit 20. The connection relationships of each circuit component and the detailed circuit structure of the first matching circuit 14 are the same as in the previous embodiment, and therefore will not be repeated here. The second matching circuit 18 includes a second capacitor C2, a third inductor L3, a third capacitor C3, a second switching component SW2, a second active component 181 with a second threshold voltage, and a third switching component SW3. One end of the second capacitor C2 is electrically connected to the antenna unit 12, and the other end is electrically connected to the third inductor L3. The two ends of the third inductor L3 are electrically connected to the second capacitor C2 and the receiving circuit 20, respectively. One end of the third capacitor C3 is electrically connected between the second capacitor C2 and the third inductor L3, and the other end is electrically connected to the second switching component SW2. One end of the second switching component SW2 is electrically connected to the third capacitor C3, and the other end is electrically connected to the ground terminal GND. One end of the second active component 181 is electrically connected between the third capacitor C3 and the second switching component SW2, and the other end is electrically connected to the ground terminal GND, so that the second active component 181 is connected in parallel with the second switching component SW2. When the voltage across the second active component 181 is greater than the second critical voltage, the second active component 181 turns on and conducts, thereby reducing the voltage across the second switching component SW2 and thus protecting the second switching component SW2. One end of the third switching component SW3 is electrically connected between the third inductor L3 and the receiving circuit 20, and the other end is electrically connected to the ground terminal GND.

[0041] In one embodiment, please also refer to Figure 9 and Figure 10 As shown, in the first matching circuit 14, the first active component 141 is a P-type metal-oxide-semiconductor transistor P1, and in the second matching circuit 18, the second active component 181 is a P-type metal-oxide-semiconductor transistor P2, as... Figure 10As shown, the source of P-type metal-oxide-semiconductor transistor P1 is connected between the first capacitor C1 and the first switching component SW1. The gate and drain of P-type metal-oxide-semiconductor transistor P1 are simultaneously connected to the ground terminal GND, making P-type metal-oxide-semiconductor transistor P1 connected in parallel with the first switching component SW1. The source of P-type metal-oxide-semiconductor transistor P2 is connected between the third capacitor C3 and the second switching component SW2. The gate and drain of P-type metal-oxide-semiconductor transistor P2 are simultaneously connected to the ground terminal GND, making P-type metal-oxide-semiconductor transistor P2 connected in parallel with the second switching component SW2. When a large instantaneous current enters the first matching circuit 14 of the antenna unit 12, the voltage across the source and gate of P-type metal-oxide-semiconductor transistor P1 will be greater than the first critical voltage. At this time, P-type metal-oxide-semiconductor transistor P1 will conduct, forming a low-impedance discharge path to ground, thereby preventing the large current from flowing through the first switching component SW1 and thus protecting the first switching component SW1. When a large instantaneous current flows into the second matching circuit 18 from the antenna unit 12, the source-gate voltage of the P-type metal-oxide-semiconductor transistor P2 will be greater than the second critical voltage. At this time, the P-type metal-oxide-semiconductor transistor P2 will conduct to form a low-impedance discharge path to ground, thereby preventing the large current from flowing through the second switching component SW2 and thus achieving the effect of protecting the second switching component SW2.

[0042] In one embodiment, please also refer to Figure 9 and Figure 11 As shown, in the first matching circuit 14, the first active component 141 is a diode D1, and in the second matching circuit 18, the second active component 181 is also a diode D3, as... Figure 11 As shown, the anode of diode D1 is connected between the first capacitor C1 and the first switching component SW1, while the cathode is connected to the ground terminal GND, making diode D1 parallel to the first switching component SW1. The anode of diode D3 is connected between the third capacitor C3 and the second switching component SW2, while the cathode is connected to the ground terminal GND, making diode D3 parallel to the second switching component SW2. When a large instantaneous current flows into the first matching circuit 14 of the antenna unit 12, the voltage across diode D1 will exceed the first critical voltage, and diode D1 will conduct, forming a low-impedance discharge path to ground, thereby preventing the large current from flowing through the first switching component SW1 and thus protecting the first switching component SW1. When a large instantaneous current flows into the second matching circuit 18 of the antenna unit 12, the voltage across diode D3 will exceed the second critical voltage, and diode D3 will conduct, forming a low-impedance discharge path to ground, thereby preventing the large current from flowing through the second switching component SW2 and thus protecting the second switching component SW2.

[0043] In one embodiment, please also refer to Figure 9 and Figure 12 As shown, in the first matching circuit 14, the first active component 141 consists of two diodes D1 and D2 connected in anti-parallel; in the second matching circuit 18, the second active component 181 consists of two diodes D3 and D4 connected in anti-parallel. Figure 12 As shown, the anode of diode D1 is connected between the first capacitor C1 and the first switching assembly SW1, and the cathode of diode D1 is connected to the ground terminal GND. The cathode of diode D2 is connected between the first capacitor C1 and the first switching assembly SW1, and the anode of diode D2 is connected to the ground terminal GND. This makes diodes D1 and D2 reverse polarities and simultaneously connected in parallel with the first switching assembly SW1 to provide bidirectional protection. The anode of diode D3 is connected between the third capacitor C3 and the second switching assembly SW2, and the cathode of diode D3 is connected to the ground terminal GND. The cathode of diode D4 is connected between the third capacitor C3 and the second switching assembly SW2, and the anode of diode D4 is connected to the ground terminal GND. This makes diodes D3 and D4 reverse polarities and simultaneously connected in parallel with the second switching assembly SW2 to provide bidirectional protection. When a large instantaneous current flows into the first matching circuit 14 of the antenna unit 12, the voltage across diode D1 will be greater than the first critical voltage. Diode D1 will conduct to form a low-impedance discharge path to ground, thereby preventing the large current from flowing through the first switching component SW1 and thus protecting the first switching component SW1. Similarly, when a large instantaneous current flows into the second matching circuit 18 of the antenna unit 12, the voltage across diode D3 will be greater than the second critical voltage. Diode D3 will conduct to form a low-impedance discharge path to ground, thereby preventing the large current from flowing through the second switching component SW2 and thus protecting the second switching component SW2.

[0044] In some embodiments, the first switching component SW1 is an N-type metal-oxide-semiconductor transistor (NMOS); the second switching component SW2 is an N-type metal-oxide-semiconductor transistor; and the third switching component SW3 is an N-type metal-oxide-semiconductor transistor.

[0045] In summary, this application proposes a wireless transceiver device and its matching circuit, which connects an active component with a critical voltage in parallel with a switching component that is susceptible to damage from instantaneous high current. The active component is turned on and conducted by utilizing the voltage across the active component, thereby forming a low-impedance discharge path to ground, which reduces the voltage across the switching component and thus protects the switching component.

[0046] The embodiments described above are merely illustrative of the technical ideas and features of this application. Their purpose is to enable those skilled in the art to understand the content of this application and implement it accordingly. They should not be used to limit the patent scope of this application. That is, all equivalent changes or modifications made in accordance with the spirit disclosed in this application should still be covered within the scope of the patent application.

[0047] [Symbol Explanation]

[0048] 10: Wireless transceiver

[0049] 12: Antenna Unit

[0050] 121: Antenna

[0051] 122: Switching Circuit

[0052] 14: First matching circuit

[0053] 141: First Active Component

[0054] 142: Inductance Pair

[0055] 16: Transmitting circuit

[0056] 18: Second Matching Circuit

[0057] 181: Second Active Component

[0058] 20: Receiving circuit

[0059] C1: First capacitor

[0060] C2: Second capacitor

[0061] C3: Third capacitor

[0062] D1: Diode

[0063] D2: Diode

[0064] D3: Diode

[0065] D4: Diode

[0066] GND: Ground terminal

[0067] L1: First Inductor

[0068] L2: Second Inductor

[0069] L3: Third Inductor

[0070] P1: P-type metal-oxide-semiconductor transistor

[0071] P2: P-type metal-oxide-semiconductor transistor

[0072] SW1: First switch assembly

[0073] SW2: Second Switch Assembly

[0074] SW3: Third Switch Assembly

Claims

1. A wireless transceiver device, comprising: An antenna unit is used to transmit a first radio frequency signal or receive a second radio frequency signal; A transmitting circuit is used to generate the first radio frequency signal; A first matching circuit, electrically connected to the antenna element and the transmitting circuit, transmits the first radio frequency signal to the antenna element. The first matching circuit includes: A first capacitor, one end of which is electrically connected to the antenna element; A first switching assembly is electrically connected to the other end of the first capacitor and a ground terminal; A first active component having a first threshold voltage is connected in parallel with the first switching component. When the voltage across the first active component exceeds the first threshold voltage, the first active component turns on and conducts, thereby reducing the voltage across the first switching component. An inductor pair has a first inductor and a second inductor. The first inductor is electrically connected to the antenna unit and the ground terminal to connect the first capacitor and the first switching assembly in parallel, and the second inductor is electrically connected to the transmitting circuit. A second matching circuit, electrically connected to the antenna element, for transmitting the second radio frequency signal; and A receiving circuit is electrically connected to the second matching circuit to receive the second radio frequency signal from the second matching circuit.

2. The wireless transceiver device as described in claim 1, wherein, The second matching circuit includes: A third inductor, one end of which is electrically connected to the antenna element; A second capacitor is electrically connected to the other end of the third inductor and the receiving circuit; and A second switching assembly, one end of which is electrically connected between the third inductor and the second capacitor, and the other end of which is electrically connected to the ground terminal.

3. The wireless transceiver device as claimed in claim 2, wherein the second matching circuit further includes a second active component having a second threshold voltage, the second active component being connected in parallel with the second switching component, and when the voltage across the second active component is greater than the second threshold voltage, the second active component is turned on and conducts, thereby reducing the voltage across the second switching component.

4. The wireless transceiver as claimed in claim 1, wherein the second matching circuit comprises: A second capacitor, one end of which is electrically connected to the antenna element; A third inductor is electrically connected to the other end of the second capacitor and the receiving circuit; A third capacitor, one end of which is electrically connected between the second capacitor and the third inductor; A second switching assembly, one end of which is electrically connected to the third capacitor and the other end of which is electrically connected to the ground terminal; A second active component having a second threshold voltage, the second active component being connected in parallel with the second switching component, wherein when the voltage across the second active component exceeds the second threshold voltage, the second active component turns on and conducts, thereby reducing the voltage across the second switching component; and A third switching assembly, one end of which is electrically connected between the third inductor and the receiving circuit, and the other end of which is electrically connected to the ground terminal.

5. The wireless transceiver device as claimed in claim 1, wherein the first active component is a P-type metal-oxide-semiconductor transistor, a diode, or two diodes connected in reverse parallel.

6. The wireless transceiver as claimed in claim 3 or 4, wherein the second active component is a P-type metal-oxide-semiconductor transistor, a diode, or two diodes connected in anti-parallel.

7. A first matching circuit for a wireless transceiver, electrically connected between an antenna element and a transmitting circuit, the first matching circuit comprising: A first capacitor, one end of which is electrically connected to the antenna element; A first switching assembly is electrically connected to the other end of the first capacitor and a ground terminal; A first active component having a first threshold voltage is connected in parallel with the first switching component. When the voltage across the first active component exceeds the first threshold voltage, the first active component turns on and conducts, thereby reducing the voltage across the first switching component; and An inductor pair has a first inductor and a second inductor. The first inductor is electrically connected to the antenna unit and the ground terminal to connect the first capacitor and the first switching assembly in parallel, and the second inductor is electrically connected to the transmitting circuit.

8. The first matching circuit of the wireless transceiver as claimed in claim 7, wherein the first active component is a P-type metal-oxide-semiconductor transistor, a diode, or two diodes connected in reverse parallel.

9. A second matching circuit for a wireless transceiver, electrically connected between an antenna element and a receiving circuit, the second matching circuit comprising: A third inductor, one end of which is electrically connected to the antenna element; A second capacitor is electrically connected to the other end of the third inductor and the receiving circuit; A second switching assembly, one end of which is electrically connected between the third inductor and the second capacitor, and the other end of which is electrically connected to a ground terminal; and A second active component having a second critical voltage is connected in parallel with the second switching component. When the voltage across the second active component is greater than the second critical voltage, the second active component turns on and conducts, thereby reducing the voltage across the second switching component.

10. The second matching circuit of the wireless transceiver as claimed in claim 9, wherein the second active component is a P-type metal-oxide-semiconductor transistor, a diode, or two diodes connected in reverse parallel.

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