Method and apparatus for regulating negative differential conductance

By obtaining the Hamiltonian and master equation through quantization processing, the problem of controlling the interaction between the light field and quantum dot under weak light field and strong coupling was solved, realizing rapid response and sensitive control of the negative differential conductivity effect, and reducing device complexity and cost.

CN117010513BActive Publication Date: 2025-12-05GUANGZHOU COLLEGE OF TECH BUSINESS CO LTD
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Patent Information

Application Number
CN202310561603.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-05-17
Publication Date
2025-12-05
Estimated Expiration
2043-05-17

AI Technical Summary

Technical Problem

Existing technologies are not suitable for handling the interaction between light fields and quantum dots, especially in the case of weak light fields and strong coupling, making it difficult to control the negative differential conductivity effect.

Method used

By employing a quantization process, the total Hamiltonian of the dual-mode quantum optical field and the dual-quantum dot system is obtained. Through canonical transformation and Born-Markov approximation, the master equation and steady-state current expression are derived, thereby enabling the modulation of the negative differential conductance effect.

Benefits of technology

In weak light fields and strong coupling environments, the negative differential conductance effect responds quickly. By adjusting the coupling strength between the dual-mode quantum state light field and the dual quantum dot system, the negative differential conductance effect can be modulated, reducing device complexity and cost.

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Abstract

The application is a method and device for regulating negative differential conductance, comprising: obtaining a total Hamiltonian of a double-mode quantum optical field coupled with a double quantum dot system; adopting quantumization processing for the interaction between the optical field and the quantum dot; processing the electron-photon coupling term in the total Hamiltonian through canonical transformation, obtaining the reduced density matrix of the system by tracing the electron reservoir and the degree of freedom of the optical field, and obtaining the master equation by using the Born-Markov approximation; obtaining the rate and current equations through the master equation, and solving to obtain the steady-state current expression; regulating the coupling strength of the double-mode quantum state optical field and the double quantum dot system through the steady-state current expression to realize the regulation of the negative differential conductance effect; without complex adjustment of the structure of the mesoscopic quantum dot system, the complexity and cost of constructing a device based on the negative differential conductance effect are reduced, and the design and implementation of the negative differential conductance device are facilitated.
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Description

Technical Field

[0001] This invention relates to the field of dual-mode quantum optical fields and dual-quantum dot systems, and in particular to a method for controlling the negative differential conductance of the coupling strength of a dual-mode quantum optical field and a dual-quantum dot system, a device for controlling the negative differential conductance of the coupling strength of a dual-mode quantum optical field and a dual-quantum dot system, a computer device, and a storage medium. Background Technology

[0002] The negative differential conductance effect is a phenomenon in which current decreases as the bias voltage increases. Due to its unique properties, it has been widely used in molecular switches, molecular amplifiers, molecular memories and other fields.

[0003] The coupling of optical cavities with mesoscopic nanostructured quantum dots has attracted widespread attention and has made rapid progress in both experimental and theoretical research. Currently, many researchers use classical methods to handle the interaction between light fields and quantum dots—assuming that the energy levels of the quantum dots change over time. While classical methods for handling light fields are effective under high field strengths, they are not suitable for weak light fields and strong coupling situations. Summary of the Invention

[0004] In view of the above problems, embodiments of the present invention are proposed to provide a method for controlling negative differential conductance, an apparatus for controlling negative differential conductance, a computer device, and a storage medium to overcome or at least partially solve the above problems.

[0005] To achieve the above objectives, this invention proposes a method for controlling negative differential conductance, the method comprising:

[0006] The total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system is obtained; wherein, the total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system includes the Hamiltonian of the left and right electrodes, the Hamiltonian of the dual quantum dots, the Hamiltonian of the direct tunneling between the dual quantum dots and the electrodes, the Hamiltonian of the dual-mode optical field, the Hamiltonian of the interaction between the dual quantum dots and the optical field, and the tunneling Hamiltonian between the two quantum dots, and the interaction between the optical field and the quantum dots is quantized;

[0007] The electron-photon coupling term in the total Hamiltonian is processed by regular transformation, and the reduced density matrix is ​​obtained by tracing the degrees of freedom of the electron pool and the light field. The master equation is obtained by applying the Born-Markov approximation.

[0008] The rate and current equations are obtained through the master equation, and the steady-state current expression is obtained by solving the equation, thus realizing the control of the negative differential conductance effect.

[0009] Preferably, the total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system is H = H leads +Hd +H d-l +H opt +H d-o +H T The Hamiltonian of the left and right electrodes is The Hamiltonian of a two-quantum-dot array is The Hamiltonian for direct tunneling between the two quantum dots and the electrode is The Hamiltonian of the dual-mode optical field is The Hamiltonian of the interaction between the two quantum dots and the light field is The tunneling Hamiltonian between the two quantum dots is

[0010] Preferably, the master equation is in ε L and ε R Then, r is the energy at the two quantum dots on the left and right; r is the squeezing parameter; D is... w oL w Lo w oR w Ro The value represents the tunneling rate between the left and right quantum dots and the left and right electrodes; t represents the tunneling coefficient between the two quantum dots.

[0011] Preferably, the steady-state current expression is as follows: w oL w Lo w oR w Ro This represents the tunneling rate between the left and right quantum dots and the left and right electrodes.

[0012]

[0013] This invention proposes a device for controlling negative differential conductance, the device comprising:

[0014] The total Hamiltonian acquisition module is used to acquire the total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system; wherein, the total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system includes the Hamiltonian of the left and right electrodes, the Hamiltonian of the dual quantum dots, the Hamiltonian of the direct tunneling between the dual quantum dots and the electrodes, the Hamiltonian of the dual-mode optical field, the Hamiltonian of the interaction between the dual quantum dots and the optical field, and the tunneling Hamiltonian between the two quantum dots, and the interaction between the optical field and the quantum dots is quantized;

[0015] The master equation acquisition module is used to process the electron-photon coupling terms in the total Hamiltonian through regular transformation, obtain the reduced density matrix by tracing the degrees of freedom of the electron pool and the light field, and obtain the master equation by applying the Born-Markov approximation.

[0016] The steady-state current expression acquisition module is used to obtain the rate and current equations through the master equation, solve for the steady-state current expression, and realize the regulation of the negative differential conductance effect.

[0017] Preferably, the total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system is H = H leads +H d +H d-l +H opt +H d-o +H T The Hamiltonian of the left and right electrodes is The Hamiltonian of a two-quantum-dot array is The Hamiltonian for direct tunneling between the two quantum dots and the electrode is The Hamiltonian of the dual-mode optical field is The Hamiltonian of the interaction between the two quantum dots and the light field is The tunneling Hamiltonian between the two quantum dots is

[0018] Preferably, the master equation is in ε L and ε R Then, r is the energy at the two quantum dots on the left and right; r is the squeezing parameter; D is... w oL w Lo w oR w Ro The value represents the tunneling rate between the left and right quantum dots and the left and right electrodes; t represents the tunneling coefficient between the two quantum dots.

[0019] Preferably, the steady-state current expression is: w oL w Lo w oR w Ro This represents the tunneling rate between the left and right quantum dots and the left and right electrodes.

[0020]

[0021] This invention discloses a computer device, including a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the steps of the above-described method for controlling negative differential conductance.

[0022] This invention discloses a computer-readable storage medium storing a computer program thereon, which, when executed by a processor, implements the steps of the above-described method for controlling negative differential conductance.

[0023] In this embodiment of the invention, the interaction between the light field and the quantum dot is quantized in a weak light field and strong coupling environment. The negative differential conductance effect responds quickly when a bias voltage is applied. The negative differential conductance effect is controlled by simply adjusting the coupling strength between the dual-mode quantum state light field and the dual quantum dot system. This eliminates the need for complex adjustments to the structure of the mesoscopic quantum dot system, thereby reducing the complexity and cost of constructing devices based on the negative differential conductance effect and facilitating the design and implementation of negative differential conductance devices. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a flowchart illustrating the steps of an embodiment of the method for controlling negative differential conductance according to an embodiment of the present invention;

[0026] Figure 2 This is a schematic diagram illustrating the evolution of negative differential conductance as a function of the coupling coefficient between a two-mode optical field and a two-quantum dot, according to an embodiment of the present invention.

[0027] Figure 3 This is a structural block diagram of an embodiment of a device for controlling negative differential conductance according to an embodiment of the present invention;

[0028] Figure 4 This is an internal structural diagram of a computer device according to one embodiment. Detailed Implementation

[0029] To make the technical problems, technical solutions, and beneficial effects solved by the embodiments of the present invention clearer, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.

[0030] Reference Figure 1 The diagram illustrates a flowchart of a method for controlling negative differential conductance according to an embodiment of the present invention, which may specifically include the following steps:

[0031] Step 101: Obtain the total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system; wherein, the total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system includes the Hamiltonian of the left and right electrodes, the Hamiltonian of the dual quantum dots, the Hamiltonian of the direct tunneling between the dual quantum dots and the electrodes, the Hamiltonian of the dual-mode optical field, the Hamiltonian of the interaction between the dual quantum dots and the optical field, and the tunneling Hamiltonian between the two quantum dots, and the interaction between the optical field and the quantum dots is quantized.

[0032] Specifically, the total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system is H = H leads +H d +H d-l +H opt +H d-o +H T The Hamiltonian of the left and right electrodes is The Hamiltonian of a two-quantum-dot array is The Hamiltonian for direct tunneling between the two quantum dots and the electrode is The Hamiltonian of the dual-mode optical field is The Hamiltonian of the interaction between the two quantum dots and the light field is The tunneling Hamiltonian between the two quantum dots is

[0033] The total Hamiltonian includes the Hamiltonians of the left and right electrodes, the Hamiltonian of the two quantum dots, the Hamiltonian of direct tunneling between the two quantum dots and the electrodes, the Hamiltonian of the two-mode optical field, the Hamiltonian of the interaction between the two quantum dots and the optical field, and the Hamiltonian of tunneling between the two quantum dots. In this embodiment of the invention, the interaction between the optical field and the quantum dots is quantized. In the formula, λ... a , λ b It is the coupling coefficient between quantum dot and photon modes. Corresponding frequency ω a and ω b The photon production (annihilation) operator, and It is the electron generation (annihilation) operator corresponding to the two quantum dots on the left and right, and t represents the tunneling coefficient between the two quantum dots.

[0034] Step 102: The electron-photon coupling term in the total Hamiltonian is processed by regularization transformation. The reduced density matrix is ​​obtained by tracing the degrees of freedom of the electron pool and the light field. The master equation is obtained by applying the Born-Markov approximation.

[0035] Further applied to this embodiment of the invention, the electron-photon coupling term in the Hamiltonian is processed using a canonical transformation. By tracing the degrees of freedom of the electron pool and the light field, the reduced density matrix of the system is obtained as ρ. Then, the Born-Markov approximation is used to obtain the master equation:

[0036]

[0037] in ε L and ε R Then, r is the energy at the two quantum dots on the left and right; r is the squeezing parameter; D is... w oL w Lo w oR w Ro The tunneling rate between the left and right quantum dots and the left and right electrodes is represented by t; t represents the tunneling coefficient between the two quantum dots.

[0038] Step 103: Obtain the rate and current equations through the master equation, solve for the steady-state current expression, and realize the regulation of the negative differential conductance effect.

[0039] The rate and current equations are obtained from the master equation and are defined as follows: Finally, the steady-state current expression I is obtained.

[0040]

[0041] w oL w Lo w oR w Ro This represents the tunneling rate between the left and right quantum dots and the left and right electrodes.

[0042] In this embodiment of the invention, the interaction between the light field and the quantum dot is quantized in a weak light field and strong coupling environment. The negative differential conductance effect responds quickly when a bias voltage is applied. The negative differential conductance effect is controlled by simply adjusting the coupling strength between the dual-mode quantum state light field and the dual quantum dot system. This eliminates the need for complex adjustments to the structure of the mesoscopic quantum dot system, thereby reducing the complexity and cost of constructing devices based on the negative differential conductance effect and facilitating the design and implementation of negative differential conductance devices.

[0043] In a practical application of this invention, when r is 0, it represents a two-mode coherent state of quantum optical field, and the effective energy level is set to... Where E F =0, meaning there is no gate voltage V. g The equilibrium chemical potential of the left (right) electrode; μ L (μ R Let μ be the chemical potential of the left (right) electrode. L (R)=E F ±V bias / 2;V bias This is the bias voltage between the two electrodes. Assume a tunneling rate Γ. α For Γl =Γ r =Γ0=0.6, t=0.2, where the photon frequency ω L =ω R =ω0=1. In this invention, energy is expressed in units of ω0. Let... α L =α R =α=0.3,β=1 / k B When T=20, the relationship curves between total current and bias voltage under different bias conditions were obtained using the method of this invention. Figure 2 .from Figure 2 As can be seen, the negative differential conductance responds rapidly near the zero point of the bias voltage and varies with the coupling coefficient between the dual-mode optical field and the two quantum dots. The three curves—the blue solid line, the red dashed line, and the green dotted line—show that within a certain coupling strength range, the larger the coupling coefficient, the more pronounced the negative differential conductance effect. Therefore, the negative differential conductance effect responds rapidly and has high sensitivity when a bias voltage is applied, and the negative differential conductance effect can be modulated by adjusting the coupling strength between the dual-mode optical field and the two quantum dots.

[0044] It should be noted that, for the sake of simplicity, the method embodiments are all described as a series of actions. However, those skilled in the art should understand that the embodiments of the present invention are not limited to the described order of actions, because according to the embodiments of the present invention, some steps can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions involved are not necessarily essential to the embodiments of the present invention.

[0045] Reference Figure 3 The diagram illustrates a structural block diagram of a device embodiment for controlling negative differential conductance according to an embodiment of the present invention, which may specifically include the following modules:

[0046] The total Hamiltonian acquisition module 301 is used to acquire the total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system; wherein, the total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system includes the Hamiltonian of the left and right electrodes, the Hamiltonian of the dual quantum dots, the Hamiltonian of the direct tunneling between the dual quantum dots and the electrodes, the Hamiltonian of the dual-mode optical field, the Hamiltonian of the interaction between the dual quantum dots and the optical field, and the tunneling Hamiltonian between the two quantum dots, and the interaction between the optical field and the quantum dots is quantized;

[0047] The master equation acquisition module 302 is used to process the electron-photon coupling term in the total Hamiltonian through regular transformation, obtain the reduced density matrix by tracing the degrees of freedom of the electron pool and the light field, and obtain the master equation by applying the Born-Markov approximation.

[0048] The steady-state current expression acquisition module 303 is used to obtain the rate and current equations through the master equation, solve for the steady-state current expression, and realize the regulation of the negative differential conductance effect.

[0049] Preferably, the total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system is H = H leads +H d +H d-l +H opt +H d-o +H T The Hamiltonian of the left and right electrodes is The Hamiltonian of a two-quantum-dot array is The Hamiltonian for direct tunneling between the two quantum dots and the electrode is The Hamiltonian of the dual-mode optical field is The Hamiltonian of the interaction between the two quantum dots and the light field is The tunneling Hamiltonian between the two quantum dots is

[0050] Preferably, the master equation is in ε L and ε R Then, r is the energy at the two quantum dots on the left and right; r is the squeezing parameter; D is... w oL w Lo w oR w Ro The value represents the tunneling rate between the left and right quantum dots and the left and right electrodes; t represents the tunneling coefficient between the two quantum dots.

[0051] Preferably, the rate and current equations are as follows:

[0052] Preferably, the steady-state current expression is as follows: w oL w Lo w oR w Ro This represents the tunneling rate between the left and right quantum dots and the left and right electrodes.

[0053] Each module in the aforementioned negative differential conductance control device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device, or stored in the memory of a computer device as software, so that the processor can call and execute the operations corresponding to each module.

[0054] The aforementioned device for controlling negative differential conductance can be used to execute the method for controlling negative differential conductance provided in any of the above embodiments, and has corresponding functions and beneficial effects.

[0055] In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 4 As shown, the computer device includes a processor, memory, network interface, display screen, and input devices connected via a system bus. The processor provides computing and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs stored in the non-volatile storage media. The network interface is used to communicate with external terminals via a network connection. When the computer program is executed by the processor, it implements a method for negative differential conductance control. The display screen can be a liquid crystal display (LCD) or an e-ink display. The input devices can be a touch layer covering the display screen, buttons, a trackball, or a touchpad mounted on the computer device casing, or an external keyboard, touchpad, or mouse.

[0056] Those skilled in the art will understand that Figure 4 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0057] In one embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0058] The total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system is obtained; wherein, the total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system includes the Hamiltonian of the left and right electrodes, the Hamiltonian of the dual quantum dots, the Hamiltonian of the direct tunneling between the dual quantum dots and the electrodes, the Hamiltonian of the dual-mode optical field, the Hamiltonian of the interaction between the dual quantum dots and the optical field, and the tunneling Hamiltonian between the two quantum dots, and the interaction between the optical field and the quantum dots is quantized;

[0059] The electron-photon coupling term in the total Hamiltonian is processed by regular transformation, and the reduced density matrix is ​​obtained by tracing the degrees of freedom of the electron pool and the light field. The master equation is obtained by applying the Born-Markov approximation.

[0060] The rate and current equations are obtained through the master equation, and the steady-state current expression is obtained by solving the equation, thus realizing the control of the negative differential conductance effect.

[0061] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor:

[0062] The total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system is obtained; wherein, the total Hamiltonian of the coupling between the dual-mode quantum optical field and the dual-quantum dot system includes the Hamiltonian of the left and right electrodes, the Hamiltonian of the dual quantum dots, the Hamiltonian of the direct tunneling between the dual quantum dots and the electrodes, the Hamiltonian of the dual-mode optical field, the Hamiltonian of the interaction between the dual quantum dots and the optical field, and the tunneling Hamiltonian between the two quantum dots, and the interaction between the optical field and the quantum dots is quantized;

[0063] The electron-photon coupling term in the total Hamiltonian is processed by regular transformation, and the reduced density matrix is ​​obtained by tracing the degrees of freedom of the electron pool and the light field. The master equation is obtained by applying the Born-Markov approximation.

[0064] The rate and current equations are obtained through the master equation, and the steady-state current expression is obtained by solving them, thus realizing the control of the negative differential conductance effect. The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably.

[0065] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, apparatus, or computer program products. Therefore, embodiments of the present invention can take the form of entirely hardware embodiments, entirely software embodiments, or embodiments combining software and hardware aspects. Furthermore, embodiments of the present invention can take the form of computer program products implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0066] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing terminal device to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal device, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1A device that provides the functions specified in one or more boxes.

[0067] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing terminal device to operate in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0068] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal equipment, causing a series of operational steps to be performed on the computer or other programmable terminal equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable terminal equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0069] Although preferred embodiments of the present invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the embodiments of the present invention.

[0070] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes said element.

[0071] The foregoing has provided a detailed description of a method for controlling negative differential conductance, a device for controlling negative differential conductance, a computer device, and a storage medium provided by the present invention. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A method of regulating negative differential conductance, comprising: The method comprises: obtaining a total Hamiltonian of a two-mode quantum light field coupled with a two-quantum dot system; wherein the total Hamiltonian of the two-mode quantum light field coupled with the two-quantum dot system comprises a Hamiltonian containing left and right electrodes, a Hamiltonian of the two-quantum dot, a Hamiltonian of direct tunneling between the two-quantum dot and the electrodes, a Hamiltonian of the two-mode light field, a Hamiltonian of interaction between the two-quantum dot and the light field, and a Hamiltonian of tunneling between the two quantum dots, and quantumization processing is adopted for interaction between the light field and the quantum dot; processing an electron-photon coupling term in the total Hamiltonian by a canonical transformation, obtaining a reduced density matrix by tracing the degrees of freedom of the electron reservoir and the light field, and obtaining a master equation by using the Born-Markov approximation; obtaining a rate and current equation through the master equation, solving to obtain a steady-state current expression, and realizing regulation of the negative differential conductance effect; The master equation is where ε L and ε R are the energies at the left and right quantum dots; r is the squeezing parameter; D is w oL , w Lo , w oR , w Ro represent the tunneling rates between the left and right quantum dots and the left and right electrodes; t represents the tunneling coefficient between the two quantum dots; the steady-state current expression is w oL , w Lo , w oR , w Ro denotes the tunneling rate between left and right quantum dots and left and right electrodes, 2. The method of negative differential conductance regulation of claim 1, wherein, The total Hamiltonian of the bimodal quantum light field coupled with the double quantum dot system is H = H leads + H d + H d-l + H opt + H d-o + H T ; the Hamiltonian of the left and right electrodes is The Hamiltonian of the double quantum dot is The Hamiltonian of the direct tunneling between the double quantum dot and the electrode is The Hamiltonian of the bimodal light field is The Hamiltonian of the interaction between the double quantum dot and the light field is The tunneling Hamiltonian between the two quantum dots is 3. A device for regulating negative differential conductance, characterized in that, The device comprises: a total Hamiltonian obtaining module configured to obtain a total Hamiltonian of a two-mode quantum light field coupled with a two-quantum dot system; wherein the total Hamiltonian of the two-mode quantum light field coupled with the two-quantum dot system comprises a Hamiltonian containing left and right electrodes, a Hamiltonian of the two-quantum dot, a Hamiltonian of direct tunneling between the two-quantum dot and the electrodes, a Hamiltonian of the two-mode light field, a Hamiltonian of interaction between the two-quantum dot and the light field, and a Hamiltonian of tunneling between the two quantum dots, and quantumization processing is adopted for interaction between the light field and the quantum dot; a master equation obtaining module configured to process an electron-photon coupling term in the total Hamiltonian by a canonical transformation, obtain a reduced density matrix by tracing the degrees of freedom of the electron reservoir and the light field, and obtain a master equation by using the Born-Markov approximation; a steady-state current expression obtaining module configured to obtain a rate and current equation through the master equation, solve to obtain a steady-state current expression, and realize regulation of the negative differential conductance effect; The master equation is where ε L and ε R are the energies at the left and right quantum dots; r is the squeezing parameter; D is w oL , w Lo , w oR , w Ro represent the tunneling rates between the left and right quantum dots and the left and right electrodes; t represents the tunneling coefficient between the two quantum dots; The steady-state current expression is w oL , w Lo , w oR , w Ro denotes the tunneling rate between left and right quantum dots and left and right electrodes, 4. The apparatus of claim 3, wherein, The total Hamiltonian of the bimodal quantum light field coupled with the double quantum dot system is H = H leads + H d + H d-l + H opt + H d-o + H T ; the Hamiltonian of the left and right electrodes is The Hamiltonian of the double quantum dot is The Hamiltonian of the direct tunneling between the double quantum dot and the electrode is The Hamiltonian of the bimodal light field is The Hamiltonian of the interaction between the double quantum dot and the light field is The tunneling Hamiltonian between the two quantum dots is 5.A computer device, comprising a memory and a processor, wherein the memory stores a computer program, and the computer device is configured to perform the method according to any one of claims 1-4 when the computer program is executed by the processor. the processor executes the computer program to realize the steps of the method for regulating the negative differential conductance effect according to any one of claims 1 to 2.

6. A computer-readable storage medium having stored thereon a computer program, characterized in that, the computer program is executed by the processor to realize the steps of the method for regulating the negative differential conductance effect according to any one of claims 1 to 2.

Citation Information

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