Substrate processing method

Abstract

According to the substrate processing method of the present invention, the method includes: a substrate holding step, wherein the substrate is held horizontally by means of a substrate clamp that holds the substrate horizontally by means of a spacer spaced upward from the upper surface of a base; a first processing liquid supply step, wherein a first processing liquid is supplied to the upper surface of the substrate held by the substrate clamp; a cleaning liquid supply step, wherein a cleaning liquid for rinsing the first processing liquid adhering to the upper surface of the base is supplied to the upper surface of the base in such a manner that the cleaning liquid on the base does not come into contact with the lower surface of the substrate held by the substrate clamp; and a removal step, wherein the cleaning liquid is removed from the upper surface of the base.

Description

[0001] This application is a divisional application of the application filed on September 15, 2017, with application number 201710834416.7 and title "Substrate Processing Method". Technical Field

[0002] This invention relates to a substrate processing method for processing substrates. Substrates targeted for processing include, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for plasma displays, substrates for FED (Field Emission Display) devices, substrates for optical discs, substrates for magnetic disks, substrates for optical disc drives, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like. Background Technology

[0003] For example, in the substrate processing of a single-sheet substrate processing apparatus that processes substrates one by one, the substrate is processed by supplying a processing liquid, such as a chemical solution, to the substrate held above a rotating base by a holding pin. During this process, some of the chemical solution supplied to the substrate falls off the substrate and adheres to the upper surface of the rotating base, sometimes contaminating the rotating base. Therefore, it is necessary to clean the rotating base.

[0004] From the viewpoint of ease of cleaning, a method for cleaning the rotating base could be to remove the substrate from the retaining pin after the substrate processing is completed, and then clean the rotating base. However, in this cleaning method, sometimes the cleaning solution adhering to the rotating base dries before cleaning, thereby generating particles such as crystals on the surface of the rotating base. In this case, the particles float within the substrate processing apparatus, and these floating particles may adhere to the substrate, raising concerns about substrate contamination.

[0005] Alternatively, as a method for cleaning the rotating base, it is also possible to interrupt the substrate processing during the process, temporarily remove the substrate from the holding pin, and then, after cleaning the base, retain the substrate back on the holding pin before restarting the substrate processing. However, in this cleaning method, time is required for holding and removing the substrate. Therefore, there is a concern that the loading and unloading efficiency (number of substrates processed per unit time) of the substrate processing apparatus may decrease.

[0006] Therefore, a method has been proposed to clean the upper surface of a rotating base while the substrate is held in a retaining pin by supplying a cleaning solution to the lower surface of the substrate from a nozzle provided on the rotating base. For example, in the substrate processing method described in U.S. Patent Application Publication No. 2007 / 113872, cleaning fluid is supplied from a nozzle opening at the center of the upper surface of the rotating base to the space between the lower surface of the substrate and the upper surface of the rotating base. This forms a liquid film of cleaning fluid, creating a liquid seal between the lower surface of the substrate and the upper surface of the rotating base. The upper surface of the rotating base is then rinsed using this liquid film of cleaning fluid. Summary of the Invention

[0007] In the substrate processing method described in U.S. Patent Application Publication No. 2007 / 113872, when rinsing the upper surface of a rotating base, a liquid film of cleaning fluid is formed on the upper surface of the rotating base, and this liquid film is brought into contact with the lower surface of the substrate. This raises concerns that dirt adhering to the rotating base may be transferred to the lower surface of the substrate via the cleaning fluid (transfer).

[0008] Therefore, one object of the present invention is to provide a substrate processing method that can suppress low loading and unloading efficiency and can clean the substrate held by the substrate clamp while suppressing contamination.

[0009] The present invention provides a substrate processing method, comprising: a substrate holding step, wherein the substrate is held horizontally by means of a substrate clamp that holds the substrate horizontally by means of a spacer spaced upward from the upper surface of a base; a first processing liquid supply step, wherein a first processing liquid is supplied to the upper surface of the substrate held by the substrate clamp; a cleaning liquid supply step, wherein a cleaning liquid for rinsing the first processing liquid adhering to the upper surface of the base is supplied to the upper surface of the base in such a manner that the cleaning liquid on the base does not come into contact with the lower surface of the substrate held by the substrate clamp; and a removal step, wherein the cleaning liquid is removed from the upper surface of the base.

[0010] According to this method, a first processing liquid is supplied to the upper surface of a substrate, which is horizontally held by a substrate clamp at intervals from the upper surface of a base, thereby processing the upper surface of the substrate. Even if the first processing liquid falls from the upper surface of the substrate and adheres to the upper surface of the base, the upper surface of the base with the adhering first processing liquid can be rinsed with cleaning liquid by supplying cleaning liquid to the upper surface of the base and then draining the cleaning liquid from the upper surface of the base. Therefore, the base can be rinsed before the first processing liquid adhering to the base dries. Therefore, the generation of particulate matter can be suppressed.

[0011] Furthermore, according to this method, the upper surface of the base is cleaned while the substrate is held in the substrate clamp. Therefore, the low loading and unloading efficiency of the substrate processing caused by cleaning the base can be suppressed. When cleaning the upper surface of the base, the cleaning fluid on the base is supplied to the upper surface of the base in a manner that prevents the cleaning fluid on the base from contacting the lower surface of the substrate held by the substrate clamp. Therefore, it is possible to prevent dirt adhering to the base from adhering to the lower surface of the substrate via the cleaning fluid.

[0012] As described above, it is possible to suppress low loading and unloading efficiency and clean the base while suppressing substrate contamination.

[0013] In one embodiment of the present invention, the substrate processing method further includes a liquid film forming step, wherein the cleaning liquid is supplied to the upper surface of the substrate to form a liquid film of the cleaning liquid covering the upper surface of the substrate without the cleaning liquid contacting the lower surface of the substrate held by the substrate clamp.

[0014] According to this method, a liquid film of cleaning fluid is formed on the upper surface of the substrate by supplying cleaning fluid to it. Since the upper surface of the substrate is covered by this liquid film, the upper surface of the substrate can be cleaned thoroughly. Furthermore, according to this method, the liquid film does not contact the lower surface of the substrate held by the substrate clamp. Therefore, it is possible to prevent dirt adhering to the substrate from adhering to the lower surface of the substrate via the cleaning fluid. Thus, substrate contamination can be suppressed while the substrate is thoroughly cleaned.

[0015] In one embodiment of the present invention, the cleaning fluid supply step includes supplying the cleaning fluid to the upper surface of the base, implying that the cleaning fluid does not adhere to the lower surface of the substrate held by the substrate clamp. According to this method, since the cleaning fluid does not adhere to the lower surface of the substrate held by the substrate clamp, contamination of the lower surface of the substrate can be further suppressed.

[0016] In one embodiment of the present invention, the substrate processing method further includes a rotation step, which, in parallel with the first processing liquid supply step and the cleaning liquid supply step, rotates the substrate together with the base about a rotation axis extending in the vertical direction. Furthermore, the rotation speed of the substrate in the cleaning liquid supply step is lower than the rotation speed of the substrate in the first processing liquid supply step.

[0017] According to this method, in the first processing liquid supply process, since the substrate rotates at a high speed, the upper surface of the substrate can be rapidly processed with the first processing liquid.

[0018] Here, the centrifugal force acting on the cleaning fluid near the edge of the upper surface of the base is greater than the centrifugal force acting on the cleaning fluid near the axis of rotation of the upper surface of the base. Therefore, the movement speed of the cleaning fluid near the edge of the upper surface of the base is greater than the movement speed of the cleaning fluid near the axis of rotation of the upper surface of the base. Consequently, the portion near the edge of the upper surface of the base is more difficult to clean than the portion near the axis of rotation of the upper surface of the base.

[0019] Therefore, during the cleaning fluid supply process, because the base rotates at a relatively low speed, the centrifugal force acting on the base decreases when the cleaning fluid reaches the vicinity of the edge of the base's upper surface. Consequently, the movement speed of the cleaning fluid near the edge of the base decreases, thus ensuring thorough cleaning of the edge of the base's upper surface.

[0020] Therefore, it can further suppress the low loading and unloading efficiency and further suppress substrate contamination.

[0021] In one embodiment of the present invention, the cleaning fluid supply process includes: supplying the cleaning fluid from a nozzle exposed on the upper surface of the base to the upper surface of the base.

[0022] According to this method, cleaning fluid is supplied to the upper surface of the base from a nozzle exposed on the upper surface of the base. Therefore, it is unnecessary to supply cleaning fluid between the base and the substrate from the outside of the base. Thus, cleaning of the base can be simplified. Consequently, the time required for cleaning the base can be reduced. Accordingly, the inefficiency of loading and unloading can be further suppressed.

[0023] In one embodiment of the present invention, the substrate processing method further includes a second processing liquid supply step, wherein after the removal step, a second processing liquid is supplied to the upper surface of the substrate, and the second processing liquid is mixed with a first processing liquid supplied to the upper surface of the substrate in the first processing liquid supply step to form a salt.

[0024] According to this method, after the first processing liquid and the cleaning liquid are discharged from the base, a second processing liquid is supplied to the upper surface of the substrate held by the substrate clamp. Therefore, when the second processing liquid is supplied to the substrate, the first processing liquid has already been discharged from the base. Thus, even if a portion of the second processing liquid supplied to the upper surface of the substrate adheres to the upper surface of the base, it is difficult to generate salt (particles) formed by the mixture of the first and second processing liquids on the base. Therefore, for a method that treats the upper surface of the substrate with the first processing liquid followed by treating it with the second processing liquid, substrate contamination can be suppressed.

[0025] In one embodiment of the present invention, the first treatment solution is one of an acidic aqueous solution and an alkaline aqueous solution, and the second treatment solution is the other of an acidic aqueous solution and an alkaline aqueous solution.

[0026] According to this method, the first processing solution is one of an acidic aqueous solution and an alkaline aqueous solution, while the second processing solution is the other of an acidic aqueous solution and an alkaline aqueous solution. When the acidic aqueous solution and the alkaline aqueous solution are mixed, salts are easily formed. Therefore, according to this method, the first processing solution is removed from the substrate before the second processing solution is supplied to the upper surface of the substrate. Thus, even if a portion of the second processing solution supplied to the upper surface of the substrate adheres to the upper surface of the substrate, the formation of salts on the substrate resulting from the mixing of the acidic and alkaline aqueous solutions can be suppressed.

[0027] The above-mentioned or further other objects, features and effects of the present invention will be clarified below by describing the embodiments with reference to the accompanying drawings. Attached Figure Description

[0028] Figure 1 This is a top view illustrating the internal layout of a substrate processing apparatus according to an embodiment of the present invention.

[0029] Figure 2 This is a schematic longitudinal sectional view illustrating an example of the structure of the processing unit of the substrate processing apparatus.

[0030] Figure 3 This is a block diagram illustrating the electrical structure of the main parts of the substrate processing apparatus.

[0031] Figure 4 This is a flowchart illustrating an example of substrate processing using the substrate processing apparatus.

[0032] Figure 5 It is used to explain the first chemical solution treatment ( Figure 4 The detailed anatomical view of S3).

[0033] Figure 6 It is used to illustrate the first rinsing treatment ( Figure 4 The detailed anatomical view of S4).

[0034] Figure 7 It is used to explain the cleaning of protective devices (guards). Figure 4 The detailed anatomical view of S5).

[0035] Figures 8A to 8C It is used to explain the base cleaning ( Figure 4 The detailed anatomical view of S6).

[0036] Figure 9It is used to explain the second chemical treatment ( Figure 4 The detailed anatomical view of S7). Detailed Implementation

[0037] Figure 1 This is a top view illustrating the internal layout of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a single-sheet processing device that processes substrates W, such as silicon wafers, one by one. In this embodiment, the substrate W is a circular substrate.

[0038] The substrate processing apparatus 1 includes: multiple processing units 2 for processing substrates W; multiple loading ports LP for holding trays C to accommodate multiple substrates W to be processed in the processing units 2; transport robots IR and CR for transporting substrates W between the loading ports LP and the processing units 2; and a controller 3 for controlling the substrate processing apparatus 1. The transport robot IR transports substrates W between the trays C and the transport robot CR. The transport robot CR transports substrates W between the transport robot IR and the processing units 2. The multiple processing units 2, for example, have identical structures.

[0039] Figure 2 This is a schematic longitudinal sectional view used to illustrate a structural example of processing unit 2.

[0040] Processing unit 2 includes a rotary chuck 5 and a cylindrical vent 6. The rotary chuck 5 holds a substrate W in a horizontal position while rotating the substrate W about a vertical axis of rotation A1 passing through the center of the substrate W. The vent 6 surrounds the rotary chuck 5. Processing unit 2 also includes a chamber 7 for accommodating the vent 6 (see reference). Figure 1 A loading / unloading outlet (not shown) for loading and unloading substrate W is formed in chamber 7. Chamber 7 is provided with a gate unit (not shown) for opening and closing the loading / unloading outlet.

[0041] The rotary chuck 5 includes a substrate holding and rotating unit, which is used to rotate the horizontally held substrate W about the rotation axis A1. The rotary chuck 5 includes a rotating base 21, a plurality of chuck pins 20, a rotating shaft 22, and an electric motor 23.

[0042] A rotating shaft 22 is attached to the center of the lower surface of the rotating base 21. The rotating shaft 22 is integral with the rotating base 21 and can rotate. The rotating shaft 22 extends vertically along the rotation axis A1. In this embodiment, the rotating shaft 22 is a hollow shaft. The rotating base 21 has a disk shape in the horizontal direction. A plurality of chuck pins 20 spaced apart in the circumferential direction are arranged at the edge of the upper surface of the rotating base 21. The distance between the upper surface of the rotating base 21 and the lower surface of the substrate W held by the rotating chuck 5 is 10 mm to 11 mm (preferably 10.4 mm).

[0043] Multiple chuck pins 20 are supported by a rotating base 21. The multiple chuck pins 20 horizontally hold the substrate W by being spaced upwards from the upper surface of the rotating base 21. The multiple chuck pins 20 are open and closed between a closed state and an open state. In the closed state, the multiple chuck pins 20 contact and hold the substrate W at its edge. In the open state, the multiple chuck pins 20 retract from the edge of the substrate W. The rotating base 21 and the chuck pins 20 are included in a substrate holding unit that horizontally holds the substrate W. The multiple chuck pins 20 are included in a substrate clamp that horizontally holds the substrate W by being spaced upwards from the upper surface of the rotating base 21 (base).

[0044] An electric motor 23 transmits rotational force to the rotating shaft 22. The electric motor 23 rotates the rotating shaft 22, causing the substrate W to rotate about the rotation axis A1. Hereinafter, the inner side of the rotation radius direction of the substrate W will be referred to as the "radial inner side." Conversely, the outer side of the rotation radius direction of the substrate W will be referred to as the "radial outer side." The rotating shaft 22 and the electric motor 23 are included in a substrate rotation unit, which is used to rotate the substrate W about the rotation axis A1.

[0045] The processing unit 2 also includes a lower rinsing fluid nozzle 9, an upper first rinsing fluid nozzle 10, and an upper second rinsing fluid nozzle 11. The lower rinsing fluid nozzle 9 is positioned lower than the substrate W and is used to supply rinsing fluid such as DIW to the upper surface of the rotating base 21. The upper first rinsing fluid nozzle 10 and the upper second rinsing fluid nozzle 11 are positioned higher than the substrate W and supply rinsing fluid such as DIW to the upper surface of the substrate W. The rinsing fluid supplied from these nozzles 9-11 is not limited to DIW. The rinsing fluid supplied from nozzles 9-11 can also be carbonated water, electrolyzed ionized water, ozone water, hydrochloric acid water with a diluted concentration (e.g., about 10 ppm to 100 ppm), reduced water (hydrogen-rich water), etc.

[0046] The lower flushing fluid nozzle 9 is inserted into the hollow rotating shaft 22. The lower flushing fluid nozzle 9 has a spray outlet 9a exposed from the upper surface of the rotating base 21 at its upper end. The spray outlet 9a is positioned to overlap with the rotating axis A1 when viewed from above. The distance between the upper end face of the spray outlet 9a and the lower surface of the substrate W is 5mm-6mm (preferably 5.4mm).

[0047] A lower flushing fluid supply pipe 30 is connected to the lower flushing fluid nozzle 9. Fluid is supplied from the lower flushing fluid supply source to the lower flushing fluid nozzle 9 via the lower flushing fluid supply pipe 30. A lower flushing fluid valve 40 is inserted and installed in the lower flushing fluid supply pipe 30 for opening and closing the flow path within the lower flushing fluid supply pipe 30; and a lower flushing fluid flow regulating valve 45 for regulating the flow rate of flushing fluid supplied from the lower flushing fluid nozzle 9 to the upper surface of the rotating base 21.

[0048] In this embodiment, the upper first rinsing fluid nozzle 10 is a fixed nozzle configured to spray rinsing fluid such as DIW toward the rotation center of the upper surface of the substrate W. The upper first rinsing fluid nozzle 10 does not necessarily have to be a fixed nozzle. It can also be a movable nozzle that moves at least in the horizontal direction.

[0049] An upper first flushing fluid supply pipe 31 is connected to the upper first flushing fluid nozzle 10. Fluid is supplied from the upper first flushing fluid supply source to the upper first flushing fluid nozzle 10 via the upper first flushing fluid supply pipe 31. An upper first flushing fluid valve 41, an upper flushing fluid flow regulating valve 46, and a flushing fluid temperature regulator 47 are inserted and installed in the upper first flushing fluid supply pipe 31.

[0050] The upper first flushing fluid valve 41 is used to open and close the flow path of the flushing fluid flowing in the upper first flushing fluid supply pipe 31. The upper flushing fluid flow regulating valve 46 is used to regulate the flow rate of the flushing fluid supplied from the upper first flushing fluid nozzle 10 to the upper surface of the substrate W. The flushing fluid temperature regulator 47 regulates the temperature of the flushing fluid supplied to the upper first flushing fluid nozzle 10 and raises the temperature to a temperature higher than room temperature (typically a temperature in the range of 15°C-30°C).

[0051] The temperature of the flushing fluid supplied from the upper first flushing fluid supply source to the upper first flushing fluid nozzle 10 can also be pre-adjusted in the upper first flushing fluid supply source. The flushing fluid supplied from the upper first flushing fluid supply source to the upper first flushing fluid nozzle 10 can also be adjusted by the flushing fluid temperature regulator 47.

[0052] In this embodiment, the upper second rinsing fluid nozzle 11 is a fixed nozzle configured to spray rinsing fluid such as DIW toward the rotation center of the upper surface of the substrate W. The upper second rinsing fluid nozzle 11 does not necessarily have to be a fixed nozzle. It can also be a movable nozzle that moves at least in the horizontal direction.

[0053] An upper second flushing fluid supply pipe 32 is connected to the upper second flushing fluid nozzle 11. Room temperature (temperature uncontrolled) flushing fluid is supplied from the upper second flushing fluid supply source to the upper second flushing fluid nozzle 11 via the upper second flushing fluid supply pipe 32. An upper second flushing fluid valve 42 for opening and closing the flow path within the upper second flushing fluid supply pipe 32 is inserted into the upper second flushing fluid supply pipe 32.

[0054] The processing unit 2 further includes a first liquid nozzle 12 and a second liquid nozzle 13 for supplying liquid medicine to the upper surface of the substrate W. The processing unit 2 also includes an infrared heater 17 for heating the liquid medicine supplied to the upper surface of the substrate W.

[0055] The first liquid nozzle 12 has the function of supplying a first processing liquid, such as a liquid for processing the upper surface of the substrate W, to a first processing liquid supply unit for the upper surface of the substrate W. The second liquid nozzle 13 has the function of supplying a second processing liquid, such as a liquid for processing the upper surface of the substrate W, to a second processing liquid supply unit for the upper surface of the substrate W.

[0056] The solution is a liquid used to treat the upper surface of the substrate W. For example, the solution is a removal liquid for thin films formed on the upper surface of the substrate W, or for removing impurities such as particulate matter adhering to the upper surface of the substrate W. In this embodiment, the solution supplied to the upper surface of the substrate W from the first solution nozzle 12 and the solution supplied to the upper surface of the substrate W from the second solution nozzle 13 are different types. Specifically, the first solution nozzle 12 is used to supply an acidic solution such as an aqueous solution of phosphoric acid. The second solution nozzle 13 supplies an alkaline solution such as SC1 (a mixture of ammonia, hydrogen peroxide, and water).

[0057] The phosphoric acid aqueous solution is an aqueous solution with phosphoric acid (H3PO4) as the main component. The mass percentage concentration of phosphoric acid in the phosphoric acid aqueous solution is, for example, in the range of 50%-100% (excluding 100%). The mass percentage concentration of phosphoric acid in the phosphoric acid aqueous solution is preferably around 90%. Furthermore, the silicon concentration of the phosphoric acid aqueous solution is preferably less than the saturation concentration. The acidic solution supplied from the first chemical nozzle 12 is not limited to a phosphoric acid aqueous solution. That is, the acidic solution supplied from the first chemical nozzle 12 can also be, for example, sulfuric acid, SPM (a mixture of sulfuric acid and hydrogen peroxide), hydrofluoric acid (hydrogen fluoride), etc. The acidic solution supplied from the first chemical nozzle 12 is particularly effective for highly viscous chemicals that are difficult to remove once they have adhered to the upper or lower surface of the substrate W.

[0058] The alkaline solution supplied from the second solution nozzle 13 is not limited to SC1. The alkaline solution supplied from the second solution nozzle 13 may also be, for example, an aqueous solution of choline, a silylating agent, etc. Examples of silylating agents include a mixture of propylene glycol monomethyl ether acetate (PGMEA) and hexamethyldisilazane (HMDS).

[0059] Salt is formed by mixing an acidic solution (first treatment solution) supplied from the first solution nozzle 12 with an alkaline solution (second treatment solution) supplied from the second solution nozzle 13. In addition to the above-mentioned solutions, the solutions may also be SC2 (a mixture of hydrochloric acid and hydrogen peroxide), buffered hydrofluoric acid (a mixture of hydrofluoric acid and ammonium fluoride), etc.

[0060] A first medicine supply pipe 33 is connected to the first medicine nozzle 12. Acidic medicines such as phosphoric acid aqueous solution are supplied from the first medicine supply source to the first medicine nozzle 12 via the first medicine supply pipe 33. A first medicine valve 43 and a medicine temperature regulator 48 are inserted and installed in the first medicine supply pipe 33. The first medicine valve 43 can open and close the flow path within the first medicine supply pipe 33. The medicine temperature regulator 48 can raise the temperature of the medicine supplied to the first medicine nozzle 12 to a temperature higher than room temperature (typically within the range of 15°C-30°C). The medicine temperature regulator 48 can also raise the temperature of the medicine supplied to the first medicine nozzle 12 to above 100°C. The temperature of the medicine supplied from the first medicine supply source to the first medicine nozzle 12 can also be pre-adjusted in the first medicine supply source. The medicine supplied from the first medicine supply source to the first medicine nozzle 12 can also be regulated by the medicine temperature regulator 48.

[0061] The first liquid nozzle 12 moves horizontally and vertically via the first nozzle moving mechanism 15. The first liquid nozzle 12 can move between a center position and a starting position (retreat position) by moving horizontally. When the first liquid nozzle 12 is in the center position, it faces the rotation center of the upper surface of the substrate W. The rotation center of the upper surface of the substrate W is the position where the substrate W intersects with the rotation axis A1 of the upper surface of the substrate W. When the first liquid nozzle 12 is in the starting position, it does not face the upper surface of the substrate W. Viewed from above, the starting position of the first liquid nozzle 12 is outside the rotating base 21. More specifically, the starting position can also be outside the exhaust canister 6. The first liquid nozzle 12 can approach or retreat upwards from the upper surface of the substrate W by moving vertically.

[0062] The first nozzle moving mechanism 15 includes, for example, a rotating shaft extending vertically, an arm coupled to the rotating shaft and extending horizontally, and an arm drive mechanism for driving the arm. The arm drive mechanism swings the arm by rotating the rotating shaft about a vertical axis of rotation. The arm drive mechanism moves the arm up and down by raising and lowering the rotating shaft along the vertical direction. A first liquid nozzle 12 is fixed to the arm. Corresponding to the swinging and raising / lowering of the arm, the first liquid nozzle 12 moves in both the horizontal and vertical directions. The arm drive mechanism includes a first motor (not shown) for rotating the arm, a ball screw (not shown) for moving the arm up and down, and a second motor (not shown) for driving the ball screw.

[0063] A second medicine supply pipe 34 is connected to the second medicine nozzle 13. Alkaline medicine such as SC1 is supplied from the second medicine supply source to the second medicine nozzle 13 via the second medicine supply pipe 34. A second medicine valve 44 for opening and closing the flow path within the second medicine supply pipe 34 is inserted into the second medicine supply pipe 34.

[0064] The second liquid nozzle 13 is moved horizontally and vertically via the second nozzle moving mechanism 16. The second liquid nozzle 13 can move between a center position and a starting position (retreat position) by moving horizontally. When the second liquid nozzle 13 is in the center position, it faces the rotation center of the upper surface of the substrate W. When the second liquid nozzle 13 is in the starting position, it does not face the upper surface of the substrate W. Viewed from above, the starting position is outside the rotating base 21. More specifically, the starting position can also be outside the exhaust canister 6. The second liquid nozzle 13 can approach or retract upwards from the upper surface of the substrate W by moving vertically.

[0065] The second nozzle moving mechanism 16 includes, for example, a rotating shaft extending vertically, an arm coupled to the rotating shaft and extending horizontally, and an arm drive mechanism for driving the arm. The arm drive mechanism swings the arm by rotating the rotating shaft about a vertical axis of rotation. The arm drive mechanism moves the arm up and down by raising and lowering the rotating shaft vertically. A second liquid nozzle 13 is fixed to the arm. Corresponding to the swinging and raising / lowering of the arm, the second liquid nozzle 13 moves in both the horizontal and vertical directions. The arm drive mechanism includes a first motor (not shown) for rotating the arm, a ball screw (not shown) for moving the arm up and down, and a second motor (not shown) for driving the ball screw.

[0066] The infrared heater 17 includes: an infrared lamp 17A that emits infrared rays; and a lamp housing 17B for housing the infrared lamp 17A. The infrared lamp 17A is disposed within the lamp housing 17B.

[0067] For example, infrared lamp 17A includes a filament and a quartz tube for housing the filament. Infrared lamp 17A emits light containing infrared rays. This infrared light penetrates lamp housing 17B and is emitted from the outer surface of lamp housing 17B, or is emitted from its outer surface by heating lamp housing 17B.

[0068] The infrared heater 17 is moved horizontally and vertically via the heater moving mechanism 18. The infrared heater 17 can move between a central position and a starting position (retreat position) by moving horizontally. When the infrared heater 17 is in the central position, the infrared irradiation area targeting the upper surface of the substrate W is located in the central region of the upper surface of the substrate W, including the center of rotation. When the infrared heater 17 is in the starting position, it does not face the upper surface of the substrate W. Viewed from above, the starting position is outside the rotating base 21. More specifically, the starting position can also be outside the exhaust canister 6. The infrared heater 17 can approach or retreat upwards from the upper surface of the substrate W by moving vertically.

[0069] The second nozzle moving mechanism 18 includes, for example, a rotating shaft extending vertically, an arm coupled to the rotating shaft and extending horizontally, and an arm drive mechanism for driving the arm. The arm drive mechanism swings the arm by rotating the rotating shaft about a vertical axis of rotation. The arm drive mechanism also moves the arm up and down by raising and lowering the rotating shaft vertically. An infrared heater 17 is fixed to the arm. Corresponding to the swinging and raising / lowering of the arm, the infrared heater moves horizontally and vertically. The arm drive mechanism includes a first motor (not shown) for rotating the arm, a ball screw (not shown) for moving the arm up and down, and a second motor (not shown) for driving the ball screw.

[0070] The processing unit 2 also includes: a plurality of cups 51-53 (first cup 51, second cup 52 and third cup 53) disposed between the rotary chuck 5 and the exhaust tank 6; and a plurality of protective devices 61-64 (first protective device 61, second protective device 62, third protective device 63 and fourth protective device 64) that receive rinsing liquid or medicine discharged from the substrate W held by the rotary chuck 5 to the outside of the substrate W.

[0071] The processing unit 2 also includes multiple protective device lifting mechanisms 71-74 (first protective device lifting mechanism 71, second protective device lifting mechanism 72, third protective device lifting mechanism 73 and fourth protective device lifting mechanism 74) for driving the lifting of multiple protective devices 61-64 respectively.

[0072] Multiple cups 51-53 are positioned radially inward of the chuck 5, closer to the exhaust manifold 6. Each cup 51-53 has an upward-opening annular groove. A second cup 52 is positioned radially outward of the first cup 51. A third cup 53 is positioned radially outward of the second cup 52. The third cup 53 is integral with, for example, a second protective device 62 and moves up and down together with the second protective device 62. A recovery pipe (not shown) or a waste pipe (not shown) is connected to the grooves of each cup 51-53. The medicine or flushing fluid guided to the bottom of each cup 51-53 is recovered or disposed of via the recovery pipe or waste pipe.

[0073] Multiple protective devices 61-64 surround the rotating chuck 5 at a position closer to the radially inner side than the exhaust casing 6. The first protective device 61 includes a vertically extending first cylindrical portion 61A and a first extending portion 61B extending radially inward from the upper end of the first cylindrical portion 61A. The second protective device 62 includes a cylindrical second cylindrical portion 62A surrounding the rotating chuck 5 at a position closer to the radially outer side than the first cylindrical portion 61A of the first protective device 61; and a second extending portion 62B extending radially inward from the upper end of the second cylindrical portion 62A. The third protective device 63 includes a cylindrical third cylindrical portion 63A surrounding the rotating chuck 5 at a position closer to the radially outer side than the second cylindrical portion 62A of the second protective device 62; and a third extending portion 63B extending radially inward from the upper end of the third cylindrical portion 63A. The fourth protective device 64 includes: a fourth cylindrical portion 64A, which is located radially outward of the rotating chuck 5 at a position closer to the outer side than the third cylindrical portion 63A of the third protective device 63; and a fourth extended portion 64B, which extends radially inward from the upper end of the fourth cylindrical portion 64A.

[0074] Each protective device 61-64 is raised and lowered between a lower position and an upper position via a corresponding protective device lifting mechanism 71-74. When the first protective device 61 is in the lower position, its upper end (radially inner end) is located lower than the substrate W. When the first protective device 61 is in the upper position, its upper end (radially inner end) is located higher than the substrate W. When the second protective device 62 is in the lower position, its upper end (radially inner end) is located lower than the substrate W. When the second protective device 62 is in the upper position, its upper end (radially inner end) is located higher than the substrate W. When the third protective device 63 is in the lower position, its upper end (radially inner end) is located lower than the substrate W. When the third protective device 63 is in the upper position, its upper end (radially inner end) is located higher than the substrate W. When the fourth protective device 64 is in the lower position, its upper end (radial inner end) is located lower than the substrate W. When the fourth protective device 64 is in the upper position, its upper end (radial inner end) is located higher than the substrate W.

[0075] The protective devices 61-64 can be positioned between the lower and upper positions facing the substrate. When the first protective device 61 is in the substrate-facing position, the radially inner end of the first extension portion 61B faces the edge of the substrate W from the radially outer side. When the second protective device 62 is in the substrate-facing position, the radially inner end of the second extension portion 62B faces the edge of the substrate W from the radially outer side. When the third protective device 63 is in the substrate-facing position, the radially inner end of the third extension portion 63B faces the edge of the substrate W from the radially outer side. When the fourth protective device 64 is in the substrate-facing position, the radially inner end of the fourth extension portion 64B faces the edge of the substrate W from the radially outer side.

[0076] Figure 3 This is a block diagram illustrating the electrical structure of the main parts of the substrate processing apparatus 1. The controller 3 includes a microcomputer and controls the controlled objects of the substrate processing apparatus 1 according to a predetermined control program. More specifically, the controller 3 includes a processor (CPU) 3A and a memory 3B storing the control program, and is configured to execute various controls for substrate processing by executing the control program through the processor 3A. In particular, the controller 3 controls the operation of the handling robots IR and CR, the electric motor 23, the nozzle moving mechanisms 15 and 16, the protective device lifting mechanisms 71-74, the infrared heater 17, the heater moving mechanism 18, the temperature regulators 47 and 48, and the valve bodies 40-46, etc.

[0077] Figure 4 This is a flowchart illustrating an example of substrate processing in substrate processing apparatus 1, mainly showing the processing achieved by the controller 3 executing an action program.

[0078] like Figure 4 As shown, for example, in the substrate processing performed by the substrate processing apparatus 1, the following steps are performed in sequence: substrate loading S1, pre-wetting treatment S2, first chemical solution treatment S3, first rinsing treatment S4, protective device cleaning S5, base cleaning S6, second chemical solution treatment S7, second rinsing treatment S8, drying S9, and substrate removal S10.

[0079] First, in the substrate processing of the substrate processing apparatus 1, the unprocessed substrate W is transferred from the pallet C to the processing unit 2 by the transport robots IR and CR, and then handed over to the rotary chuck 5 (S1). Afterwards, while the substrate W is being moved out by the transport robot CR, it is held horizontally by the chuck pins 20, spaced upwards from the top of the rotating base 21 (substrate holding process). With the substrate W horizontally held by the rotary chuck 5, the lower surface of the substrate W faces the upper surface of the rotating base 21. The controller 3 drives the electric motor 23, thereby causing the substrate W to rotate together with the rotating base 21 (substrate rotation process).

[0080] Next, after the handling robot CR retreats outside the processing unit 2, a pre-wetting process (S2) is performed, in which warm water (DIW at a temperature above room temperature (e.g., 60°C) is supplied to the substrate W as an example of a pre-wetting liquid. The pre-wetting liquid is a liquid used to pre-wet the upper surface of the substrate W before treating the substrate W with a chemical solution.

[0081] Specifically, controller 3 opens the upper first rinsing fluid valve 41, thereby spraying warm water from the upper first rinsing fluid nozzle 10 toward the central region of the upper surface of the rotating substrate W. The warm water sprayed from the upper first rinsing fluid nozzle 10, after adhering to the upper surface of the substrate W, flows outward along the upper surface of the substrate W. Therefore, warm water is supplied to the entire area of ​​the upper surface of the substrate W. Accordingly, a liquid film of warm water covering the entire upper surface of the substrate W is formed.

[0082] Thus, the first rinsing fluid nozzle 10 above functions as a pre-wetting fluid supply unit that supplies rinsing fluid, which is a pre-wetting fluid, to the upper surface of the substrate W.

[0083] Then, after performing a pre-wetting treatment S2 for a certain period of time, a first chemical treatment S3 is performed. In the first chemical treatment S3, a liquid film of a chemical solution such as a high-temperature phosphoric acid aqueous solution is formed on the upper surface of the substrate W, and the upper surface of the substrate W is simultaneously etched. Figure 5 It is used to explain the first chemical solution treatment ( Figure 4The detailed anatomical view of S3).

[0084] During the first chemical treatment, the substrate W rotates at a speed of, for example, 200 rpm. Meanwhile, the controller 3 controls the lifting mechanisms 71-74 of the protective devices. Consequently, the upper end (radially inner end) of the first protective device 61 is positioned lower than the substrate W. Furthermore, the upper ends (radially inner ends) of the second protective device 62, the third protective device 63, and the fourth protective device 64 are positioned higher than the substrate W.

[0085] Then, the controller 3 controls the first nozzle moving mechanism 15, thereby positioning the first liquid nozzle 12 at the liquid treatment position above the substrate W. When the first liquid nozzle 12 is in the liquid treatment position, the phosphoric acid aqueous solution sprayed from the first liquid nozzle 12... Attached to The rotation center is located on the upper surface of the substrate W. The controller 3 can also move the first liquid nozzle 12 between a central position and an outer peripheral position. When the first liquid nozzle 12 is in the outer peripheral position, the first liquid nozzle 12 faces the edge of the substrate W. Then, the controller 3 closes the upper first rinsing fluid valve 41, thereby stopping the supply of warm water from the upper first rinsing fluid nozzle 10.

[0086] On the other hand, controller 3 opens the first liquid valve 43, thereby starting to supply a liquid such as a phosphoric acid aqueous solution from the first liquid nozzle 12. Accordingly, the phosphoric acid aqueous solution is sprayed from the first liquid nozzle 12 towards the central region of the upper surface of the rotating substrate W. The temperature of the phosphoric acid aqueous solution sprayed from the first liquid nozzle 12 is, for example, 160°C-195°C. The supply rate of the phosphoric acid aqueous solution from the first liquid nozzle 12 is, for example, 1 liter / minute.

[0087] The phosphoric acid aqueous solution sprayed from the first chemical nozzle 12 adheres to the upper surface of the rotating substrate W and flows radially outward along the upper surface of the substrate W due to centrifugal force. Thus, the phosphoric acid aqueous solution covers the entire upper surface of the substrate W. Consequently, the liquid film of warm water on the substrate W is replaced by a liquid film of phosphoric acid aqueous solution covering the entire upper surface of the substrate W. The upper surface of the substrate W is etched by the phosphoric acid aqueous solution in the liquid film, thereby selectively removing the silicon dioxide film from the silicon nitride (SiN) and silicon dioxide (SiO2) films formed on the upper surface of the substrate W.

[0088] The rinsing solution and phosphoric acid aqueous solution on the rotating substrate W are dispersed radially outward from the edge of the substrate W due to centrifugal force, passing between the first extension portion 61B of the first protective device 61 and the second extension portion 62B of the second protective device 62, and are received by the second cylindrical portion 62A. The phosphoric acid aqueous solution received by the second cylindrical portion 62A is then received by the second cup 52 (see reference). Figure 2After the rinsing solution on substrate W is completely replaced by the phosphoric acid aqueous solution, the phosphoric acid aqueous solution received by the second cup 52 can also be recycled and supplied to substrate W again. This reduces the amount of phosphoric acid aqueous solution used.

[0089] During the first chemical treatment S3, when the phosphoric acid aqueous solution on the rotating substrate W is scattered radially outward from the edge of the substrate W due to centrifugal force, it may sometimes adhere to the extension portions 61B-64B of the multiple protective devices 61-64. In addition, during the first chemical treatment S3, sometimes a portion of the phosphoric acid aqueous solution on the rotating substrate W may fall off from the edge of the substrate W and adhere to the upper surface of the rotating base 21.

[0090] In the first solution treatment S3, the controller 3 can also cause the infrared heater 17 to emit light, thereby heating the liquid film of phosphoric acid aqueous solution on the upper surface of the substrate W (solution heating step). Specifically, the controller 3 controls the heater moving mechanism 18 to move the infrared heater 17 from the retracted position to the processing position. At this time, the controller 3 can also move the infrared heater 17 horizontally, moving it between a central position and an outer peripheral position. Alternatively, the controller 3 can control the heater moving mechanism 18 so that the infrared irradiation area is stationary in the central region of the substrate W. When the infrared heater 17 is in the outer peripheral position, the infrared irradiation area for the upper surface of the substrate W is located in the outer peripheral region including the edge of the substrate W. By moving the infrared heater 17 between the central position and the outer peripheral position, the liquid film of phosphoric acid aqueous solution covering the entire upper surface of the substrate W is uniformly heated.

[0091] The heating temperature of the substrate W based on the infrared heater 17 is set to a temperature near the boiling point of the phosphoric acid aqueous solution at its concentration (above 100°C; for example, a specified temperature within the range of 140°C to 195°C). Therefore, the phosphoric acid aqueous solution on the substrate W is heated to its boiling point at its concentration and maintained in a boiling state. In particular, when the heating temperature of the substrate W based on the infrared heater 17 is set to a temperature higher than the boiling point of the phosphoric acid aqueous solution at its concentration, the temperature of the interface between the substrate W and the phosphoric acid aqueous solution remains above the boiling point, thereby promoting etching of the substrate W.

[0092] After a predetermined time has elapsed since the substrate W has been heated based on the infrared heater 17, the controller 3 causes the infrared heater 17 to retract from above the substrate W and stops the infrared heater 17 from emitting light.

[0093] Furthermore, in the first chemical treatment S3, the amount of phosphoric acid aqueous solution on the substrate W can also be reduced (liquid volume reduction process). Specifically, the controller 3 stops supplying phosphoric acid aqueous solution from the first chemical nozzle 12 to the rotating substrate W. Accordingly, a portion of the phosphoric acid aqueous solution on the substrate W is expelled from the upper surface of the substrate W due to centrifugal force, thereby reducing the amount of phosphoric acid aqueous solution on the substrate W. Therefore, the thickness of the phosphoric acid aqueous solution film decreases. That is, the amount of phosphoric acid aqueous solution on the substrate W is reduced when the entire upper surface of the substrate W is covered by the phosphoric acid aqueous solution film.

[0094] Next, after performing the first chemical treatment S3 for a certain period of time, the first rinsing treatment S4 is performed. In the first rinsing treatment S4, the chemical solution on the substrate W, such as an aqueous phosphoric acid solution, is replaced with a rinsing solution such as DIW to remove the chemical solution from the substrate W. Figure 6 It is used to illustrate the first rinsing treatment ( Figure 4 The detailed anatomical view of S4).

[0095] Specifically, controller 3 closes the first liquid valve 43 and reopens the upper first rinsing liquid valve 41. As a result, rinsing liquid such as warm water is supplied from the upper first rinsing liquid nozzle 10 to the top of the rotating substrate W (warm water supply process).

[0096] During the first rinsing process S4, the rotational speed of the substrate W is maintained, for example, at the same speed (200 rpm) as the rotational speed of the substrate W during the first liquid treatment S3. In addition, the amount of rinsing liquid supplied from the upper first rinsing liquid nozzle 10 is 2 liters / minute.

[0097] The warm water sprayed from the first rinsing nozzle 10 adheres to the central region of the upper surface of the rotating substrate W, and then flows radially outward along the upper surface of the substrate W due to centrifugal force. Therefore, the film of phosphoric acid aqueous solution on the substrate W is replaced by a film of warm water. Thus, the upper surface of the substrate W is cleaned by rinsing solution such as warm water (substrate cleaning process). During this period, the controller 3 controls the first nozzle moving mechanism 15, causing the first liquid nozzle 12 to retract from above the substrate W to the side of the exhaust tank 6.

[0098] Next, after performing the first rinsing process S4 for a certain period of time, the protective device cleaning S5 is performed. In the protective device cleaning S5, rinsing liquid such as DIW is continuously supplied to the upper surface of the substrate W which is in a rotating state, thereby cleaning the protective devices 61-64 by the rinsing liquid that splashes from the substrate W. Figure 7 It is used to explain the cleaning of protective devices. Figure 4 The detailed anatomical view of S5).

[0099] Specifically, the controller 3 controls the electric motor 23 to reduce the rotation speed of the rotating base 21, thereby setting the rotation speed of the substrate W to, for example, 100 rpm-150 rpm.

[0100] The controller 3 controls the lifting mechanisms 71-74 of multiple protective devices, thereby positioning the multiple protective devices 61-64 in a position facing the substrate while they are brought close to each other vertically. Meanwhile, rinsing fluid continues to be supplied from the upper first rinsing fluid nozzle 10. As a result, the rinsing fluid supplied from the upper first rinsing fluid nozzle 10 to the upper surface of the rotating substrate W splashes radially outward from the substrate W. The extended portions 61B-64B of the protective devices 61-64 are rinsed by the rinsing fluid that splashes radially outward from the substrate W (protective device cleaning process).

[0101] Therefore, during the first chemical treatment S3, the phosphoric acid aqueous solution adhering to the extended mounting portions 61B-64B of the protective devices 61-64 is discharged from the extended mounting portions 61B-64B. Thus, the upper first rinsing fluid nozzle 10 functions as a protective device cleaning unit for the protective devices 61-64 by supplying rinsing fluid to the upper surface of the substrate W.

[0102] Next, after performing the protective device cleaning S5 for a certain period of time, the base cleaning S6 is performed to clean the rotating base 21. In the base cleaning S6, rinsing fluid such as DIW is supplied from the lower rinsing fluid nozzle 9 to the upper surface of the rotating base 21, thereby cleaning the rotating base 21. Figures 8A to 8C It is used to explain the base cleaning ( Figure 4 The detailed anatomical view of S6).

[0103] Reference Figure 8A The controller 3 opens the lower flushing fluid valve 40, thereby supplying flushing fluid such as DIW from the lower flushing fluid nozzle 9 to the upper surface of the rotating base 21 (flushing fluid supply process). In the flushing fluid supply process, flushing fluid is supplied from the lower flushing fluid nozzle 9 to the upper surface of the rotating base 21, ensuring that the flushing fluid on the rotating base 21 does not contact the lower surface of the substrate W. In the flushing fluid supply process, it is preferable to supply flushing fluid to the upper surface of the rotating base 21 so that the flushing fluid does not adhere to the lower surface of the substrate W. However, flushing fluid ejected from the nozzle 9a of the lower flushing fluid nozzle 9 may adhere to the lower surface of the substrate W once and then fall onto the rotating base 21. Additionally, flushing fluid ejected from the nozzle 9a of the lower flushing fluid nozzle 9 and adhering once to the upper surface of the rotating base 21 may also bounce off the top of the rotating base 21 and adhere to the lower surface of the substrate W.

[0104] When flushing fluid is supplied from the lower flushing fluid nozzle 9 to the upper surface of the rotating base 21, the controller 3 can also control the lower flushing fluid flow regulating valve 45, thereby regulating the supply amount of flushing fluid from the lower flushing fluid nozzle 9 (flow regulation process). This allows the flushing fluid flow rate to be adjusted so that flushing fluid rebounding from the upper surface of the rotating base 21 does not adhere to the lower surface of the substrate W. Furthermore, the flushing fluid flow rate can be adjusted so that the flushing fluid ejected from the nozzle outlet 9a of the lower flushing fluid nozzle 9 does not directly adhere to the lower surface of the substrate W.

[0105] The controller 3 controls the electric motor 23 to reduce the rotation speed of the rotating base 21, so that the rotation speed of the substrate W in the rinsing liquid supply process is lower than the rotation speed of the substrate W in the first liquid supply process (rotation deceleration process). The rotation speed of the rotating base 21 after deceleration is, for example, 10 rpm.

[0106] Reference Figure 8B A liquid film 100 of rinsing fluid covering the entire upper surface of the rotating base 21 is formed by continuously supplying rinsing fluid from the lower rinsing fluid nozzle 9 to the upper surface of the rotating base 21 without contacting the lower surface of the substrate W (liquid film formation process, continuous supply process). The controller 3 can also adjust the supply amount of rinsing fluid from the lower rinsing fluid nozzle 9 by controlling the lower rinsing fluid flow regulating valve 45, so that the liquid film 100 does not contact the lower surface of the substrate W (flow regulating process). The centrifugal force generated by the rotation of the substrate W acts on the rinsing fluid on the upper surface of the rotating base 21. Therefore, after the liquid film 100 covering the entire upper surface of the rotating base 21 is formed, a portion of the rinsing fluid on the upper surface of the rotating base 21 is dispersed radially outward to the substrate W. For example, when the flow rate of the rinsing liquid at the outlet 9a of the lower rinsing liquid nozzle 9 is adjusted to about 400cc / minute, and the rotating base 21 is rotated at about 10rpm, a gap is formed between the lower surface of the substrate W and the liquid film 100, so that the liquid film 100 does not come into contact with the lower surface of the substrate W.

[0107] During the liquid film formation process, the controller 3 controls the lifting mechanisms 71-74 of the protective devices. As a result, the upper end (radially inner end) of the first protective device 61 is positioned lower than the rotating base 21. In addition, the upper ends (radially inner ends) of the second protective device 62, the third protective device 63, and the fourth protective device 64 are positioned facing the substrate or higher than the substrate W.

[0108] The rinsing fluid on the rotating base 21, which is in a rotating state, is dispersed radially outward from the edge of the substrate W due to centrifugal force, and passes between the first extension portion 61B of the first protective device 61 and the second extension portion 62B of the second protective device 62, thereby being received by the second cylindrical portion 62A. The rinsing fluid received by the second cylindrical portion 62A is then collected by the second cup 52 (see reference). Figure 2 )take over.

[0109] Reference Figure 8C The controller 3 closes the lower flushing fluid valve 40, thereby stopping the supply of flushing fluid from the lower flushing fluid nozzle 9 to the rotating base 21 (stop flushing fluid supply process). The centrifugal force generated by the rotation of the substrate W acts on the flushing fluid on the upper surface of the rotating base 21, so the thickness of the liquid film 100 on the upper surface of the rotating base 21 gradually thins, and eventually, the liquid film 100 of the flushing fluid is discharged from the upper surface of the rotating base 21 (liquid film removal process). When the liquid film 100 is discharged from the upper surface of the rotating base 21, the controller 3 can also control the electric motor 23 to increase the rotation speed of the substrate W, so that the rotation speed of the substrate W in the liquid film removal process is higher than the rotation speed of the substrate W in the flushing fluid supply process. The rotation speed of the substrate W in the liquid film removal process is, for example, 200 rpm. It is also possible to adjust the rotation speed of the substrate W in the liquid film removal process so that the flushing fluid slowly falls from the edge of the rotating base 21, rather than causing the flushing fluid to scatter radially outward from the rotating base 21. The flushing fluid can also be removed from the rotating base 21 by allowing it to slowly drip down from the edge of the rotating base 21.

[0110] In this way, the lower rinsing nozzle 9 uses rinsing liquid to rinse away the chemical solution (first processing liquid) such as phosphoric acid solution adhering to the upper surface of the rotating base 21, thereby functioning as a base cleaning unit for cleaning the upper surface of the rotating base 21. Therefore, the rinsing liquid supplied from the lower rinsing nozzle 9 to the rotating base 21 is a cleaning liquid used to rinse away the chemical solution adhering to the upper surface of the rotating base 21. In addition, the rinsing liquid supply process is equivalent to a cleaning liquid supply process that supplies cleaning liquid to the upper surface of the rotating base 21 in a manner that prevents the cleaning liquid on the rotating base 21 from contacting the lower surface of the substrate W.

[0111] Furthermore, in the base cleaning S6, rinsing liquid is continuously supplied to the upper surface of the substrate W from the upper first rinsing liquid nozzle 10. This prevents the upper surface of the substrate W from drying during the base cleaning S6. Additionally, in the rinsing liquid supply process and the liquid film formation process, the substrate W rotates at a relatively low speed, thus reducing the amount of rinsing liquid that splashes radially outward from the substrate W. Therefore, the controller 3 can also control the upper rinsing liquid flow regulating valve 46, thereby reducing the flow rate of rinsing liquid from the upper first rinsing liquid nozzle 10 by reducing the rotation speed of the substrate W in the rinsing liquid supply process (see reference). Figure 8Aand Figure 8B Furthermore, during the liquid film removal process, the substrate W rotates at a relatively high speed, resulting in a larger amount of rinsing fluid being dispersed radially outward from the substrate W. Therefore, the controller 3 can also control the upper rinsing fluid flow regulating valve 46, thereby increasing the flow rate of rinsing fluid from the upper first rinsing fluid nozzle 10 by increasing the rotation speed of the substrate W during the liquid film removal process (see reference). Figure 8C Therefore, in the rinsing fluid supply process and the liquid film formation process, the amount of rinsing fluid supplied to the upper surface of the substrate W can be controlled. On the other hand, in the liquid film removal process, a sufficient amount of rinsing fluid can be supplied to the upper surface of the substrate W.

[0112] Furthermore, since centrifugal force acts on the rinsing liquid on the substrate W, and the rinsing liquid is dispersed radially outward from the edge of the substrate W, the protective devices 61-64 can be continuously cleaned in the base cleaning S6 by continuously supplying rinsing liquid to the upper surface of the substrate W from the upper first rinsing liquid nozzle 10. That is, the protective device cleaning process can be performed in parallel with the rinsing liquid supply process (cleaning liquid supply process), the liquid film formation process, and the liquid film removal process. At this time, when the protective devices 61-64 are in the position facing the substrate, the rinsing liquid dispersed radially outward from the edge of the substrate W cleans the protective devices 61-64, and the rinsing liquid dispersed radially outward from the edge of the rotating base 21 is received by the first cylindrical portion 61A of the protective device 61. The rinsing liquid received by the first cylindrical portion 61A is then collected by the first cup 51 (see reference). Figure 2 ) Received. In Figures 8A to 8C In the rinsing fluid supply process of the base cleaning S6 shown, the protective devices 61-64 located facing the substrate are cleaned, while... Figures 8A-8C In the liquid film formation and liquid film removal processes of the base cleaning S6 shown, the protective devices 62-64 located facing the substrate are cleaned.

[0113] Next, after the rotating base 21 is cleaned by the rinsing solution, a second chemical treatment S7 is performed. In the second chemical treatment S7, the upper surface of the substrate W is treated using SC1, which is an example of a chemical solution. Figure 9 It is used to explain the second chemical treatment ( Figure 4 The detailed anatomical view of S7).

[0114] Specifically, the controller 3 controls the electric motor 23, thereby maintaining the rotation speed of the substrate W at, for example, 200 rpm. On the other hand, the controller 3 controls the lifting mechanisms 71-74 of the protective devices, thereby positioning the upper ends (radially inner ends) of the first protective device 61, the second protective device 62, and the third protective device 63 at a position lower than the substrate W, and positioning the upper end (radially inner end) of the fourth protective device 64 at a position higher than the substrate W.

[0115] Then, the controller 3 controls the second nozzle moving mechanism 16, thereby positioning the second liquid nozzle 13 at the liquid treatment position above the substrate W. When the second liquid nozzle 13 is in the liquid treatment position, the SC1 ejected from the second liquid nozzle 13 adheres to the rotation center of the upper surface of the substrate W. The controller 3 can also move the second liquid nozzle 13 between a central position and an outer peripheral position. When the second liquid nozzle 13 is in the outer peripheral position, the second liquid nozzle 13 faces the edge of the substrate W.

[0116] Then, controller 3 opens the second liquid valve 44. As a result, SC1 is sprayed from the second liquid nozzle 13 onto the upper surface of the rotating substrate W. The supply rate of SC1 from the second liquid nozzle 13 is, for example, 1 liter per minute. After adhering to the central region of the upper surface of the substrate W covered by a film of warm water, the SC1 sprayed from the second liquid nozzle 13 flows radially outward along the upper surface of the substrate W due to centrifugal force. Thus, SC1 covers the entire upper surface of the substrate W, replacing the film of warm water on the substrate W with a film of SC1 covering the entire upper surface of the substrate W.

[0117] The rinsing liquid and SC1 on the substrate W are dispersed radially outward from the edge of the substrate W due to centrifugal force, and pass between the third extension portion 63B of the third protective device 63 and the fourth extension portion 64B of the fourth protective device 64, and are received by the fourth cylindrical portion 64A. The SC1 received by the fourth cylindrical portion 64A is then received by the third cup 53 (see reference). Figure 2 The SC1 received by the third cup 53 after the rinsing fluid on the substrate W is replaced by SC1 can also be recycled and supplied to the substrate W again. As a result, the amount of SC1 used will be reduced.

[0118] Next, a second rinsing process S8 is performed. In the second rinsing process S8, a rinsing liquid such as DIW, which is an example of a rinsing liquid, is supplied to the substrate W, thereby replacing the liquid film of SC1 on the substrate W with the rinsing liquid.

[0119] Specifically, controller 3 opens the upper second flushing fluid valve 42, thereby supplying flushing fluid such as DIW from the upper second flushing fluid nozzle 11 to the central area of ​​the upper surface of the rotating substrate W. As a result, SC1 on the substrate W is pushed outward by the flushing fluid and sprayed around the substrate W. Thus, the liquid film of SC1 on the substrate W is replaced by a liquid film of flushing fluid covering the entire area of ​​the upper surface of the substrate W. Then, if a predetermined time has elapsed after opening the upper second flushing fluid valve 42, controller 3 closes the upper second flushing fluid valve 42 and stops spraying flushing fluid.

[0120] Next, a drying process S9 is performed to dry the substrate W.

[0121] Specifically, the controller 3 accelerates the substrate W in the rotational direction by rotating the chuck 5, causing the substrate W to rotate at a high speed (e.g., 500-3000 rpm) higher than the rotational speed of the substrate W during the pre-wetting treatment S2 to the second rinsing treatment S8. This results in a greater centrifugal force acting on the rinsing liquid on the substrate W, causing the rinsing liquid to be thrown outwards from the substrate W. In this way, the rinsing liquid is removed from the substrate W, thereby drying the substrate W. Then, after a predetermined time has elapsed since the substrate W began high-speed rotation, the controller 3 stops the rotation of the substrate W based on the rotating base 21.

[0122] Next, the transport robot CR enters the processing unit 2, removes the processed substrate W from the rotary chuck 5, and moves it out of the processing unit 2 (S10). The substrate W is transferred from the transport robot CR to the transport robot IR, and is accommodated in the pallet C by the transport robot IR. Then, during the period until other substrates W different from the previous ones are moved into the processing unit 2, rinsing liquid is supplied from the lower rinsing liquid nozzle 9 to the upper surface of the rotating base 21, thereby cleaning the upper surface of the rotating base 21.

[0123] According to this embodiment, the upper surface of the substrate W is etched (processed) by supplying a chemical solution such as an aqueous phosphoric acid solution (first processing solution) to the upper surface of the substrate W, which is held horizontally above the upper surface of the rotating base 21 with a gap between the upper surface and the substrate. Even if the first processing solution falls off the upper surface of the substrate and adheres to the upper surface of the rotating base 21, the upper surface of the rotating base 21 with the chemical solution can be rinsed by supplying a rinsing solution such as DIW to the upper surface of the rotating base 21 and then removing the rinsing solution from the upper surface of the rotating base 21. Therefore, the rotating base 21 can be cleaned before the chemical solution adhering to it dries. As a result, the generation of particulate matter can be suppressed.

[0124] Furthermore, according to this embodiment, the upper surface of the rotating base 21 is cleaned while the substrate W is held in the chuck pin 20. Therefore, the low loading and unloading efficiency of the substrate processing caused by cleaning the rotating base 21 can be suppressed. When cleaning the rotating base 21, the rinsing liquid is supplied to the upper surface of the rotating base 21 in a manner that the rinsing liquid on the rotating base 21 does not contact the lower surface of the substrate W. Therefore, it is possible to prevent dirt adhering to the rotating base 21 from adhering to the lower surface of the substrate W via the rinsing liquid.

[0125] As described above, it is possible to suppress low loading and unloading efficiency and to clean the base while suppressing contamination of the substrate W.

[0126] Furthermore, according to this embodiment, a liquid film 100 of the rinsing liquid is formed on the upper surface of the rotating base 21 by supplying rinsing liquid to the upper surface of the rotating base 21. Since the upper surface of the rotating base 21 is covered by this liquid film 100, the upper surface of the rotating base 21 can be cleaned without any omissions. In particular, by covering the edges of the upper surface of the rotating base 21 with the liquid film 100, the edges of the upper surface of the rotating base 21 can be thoroughly cleaned compared to substrate processing where no liquid film 100 is formed on the upper surface of the rotating base 21. In addition, according to this embodiment, the liquid film 100 does not contact the lower surface of the substrate W. Therefore, it is possible to prevent dirt adhering to the rotating base 21 from adhering to the lower surface of the substrate W via the rinsing liquid. Thus, the rotating base 21 can be thoroughly cleaned while suppressing contamination of the substrate W.

[0127] Furthermore, according to this embodiment, rinsing fluid can be supplied to the upper surface of the rotating base 21 in a manner that prevents the rinsing fluid from adhering to the lower surface of the substrate W. Since the rinsing fluid does not adhere to the lower surface of the substrate W, contamination of the lower surface of the substrate W can be further suppressed.

[0128] Furthermore, according to this embodiment, the substrate W rotates together with the rotating base 21. The rotation speed of the substrate W in the rinsing solution supply process (cleaning solution supply process) is lower than the rotation speed of the substrate W in the first chemical solution supply process (first processing solution supply process). Therefore, in the first chemical solution supply process, the substrate W rotates at a higher speed, thus enabling rapid etching (processing) of the surface of the substrate W with a chemical solution such as phosphoric acid aqueous solution.

[0129] On the other hand, during the cleaning fluid supply process, the rotating base 21 rotates at a relatively low speed. Therefore, when the rinsing fluid reaches the vicinity of the edge of the upper surface of the rotating base 21, the centrifugal force acting on the rotating base 21 is reduced. This reduces the movement speed of the rinsing fluid near the edge of the upper surface of the rotating base 21, thereby ensuring thorough cleaning of the edge of the upper surface of the rotating base 21.

[0130] Therefore, it is possible to further suppress the low loading and unloading efficiency and to further suppress the contamination of the substrate W.

[0131] Furthermore, according to this embodiment, rinsing fluid is supplied to the upper surface of the rotating base 21 from the lower rinsing fluid nozzle 9 exposed on the upper surface of the rotating base 21. Therefore, it is not necessary to supply rinsing fluid from the outside of the rotating base 21 between the rotating base 21 and the substrate W, thereby making it easier to clean the rotating base 21. As a result, the time required to clean the rotating base 21 can be reduced. Accordingly, the low loading and unloading efficiency can be further suppressed.

[0132] Furthermore, according to this embodiment, after the chemical solution such as phosphoric acid aqueous solution (first processing solution) and rinsing solution (cleaning solution) are discharged from the rotating base 21, a chemical solution such as SC1 (second processing solution) is supplied to the upper surface of the substrate W. Therefore, when SC1 (second processing solution) is supplied to the substrate W, the phosphoric acid aqueous solution (first processing solution) has already been discharged from the rotating base 21. Therefore, even if a portion of the SC1 supplied to the substrate W adheres to the upper surface of the rotating base 21, it is difficult to generate salt (particles) formed by the mixing of the phosphoric acid aqueous solution (acidic aqueous solution) and SC1 (alkaline aqueous solution) on the rotating base 21.

[0133] Therefore, by treating the upper surface of the substrate W with an acidic solution such as an aqueous phosphoric acid solution (first treatment solution) and then treating the upper surface of the substrate W with an alkaline solution such as SC1 (second treatment solution) that can form a salt with the solution, contamination of the substrate W can be suppressed.

[0134] The present invention is not limited to the embodiments described above, and can be further implemented in other ways.

[0135] For example, in the above embodiment, the first drug nozzle 12 supplies an acidic drug solution such as an aqueous phosphoric acid solution, while the second drug nozzle 13 supplies an alkaline drug solution such as SC1. However, the properties of the drug solutions supplied by each nozzle 12 and 13 can also be the opposite of those in the above embodiment. That is, the first drug nozzle 12 can be configured to supply an alkaline drug solution such as SC1, while the second drug nozzle 13 can supply an acidic drug solution such as an aqueous phosphoric acid solution. In this case, the same effect as in the above embodiment can be achieved.

[0136] Furthermore, unlike the above embodiment, the liquid supplied from the first liquid nozzle 12 and the liquid supplied from the second liquid nozzle 13 can be of the same type, and the second liquid treatment S7 and the second rinsing treatment S8 in the substrate processing can be omitted (see [reference]). Figure 4 Even if the second chemical treatment S7 and the second rinsing treatment S8 are omitted, the substrate W is held in the chuck pin 20 state, that is, the protective device cleaning S5 and the base cleaning S6 are performed immediately after the substrate W is treated with the first treatment liquid. Therefore, it is possible to suppress the generation of particles due to the drying of the first treatment liquid when it is left on the rotating base 21 for a long time.

[0137] Furthermore, in the pre-wetting process S2 and the first rinsing process S3 of the above embodiment, rinsing liquid is supplied to the upper surface of the substrate W from the upper first rinsing liquid nozzle 10. Additionally, in the second rinsing process S8, rinsing liquid is supplied to the upper surface of the substrate W from the upper second rinsing liquid nozzle 11. However, in each of the pre-wetting process S2, the first rinsing process S3, and the second rinsing process S8, rinsing liquid may be supplied to the upper surface of the substrate W from either the upper first rinsing liquid nozzle 10 or the upper second rinsing liquid nozzle 11.

[0138] Furthermore, in the substrate processing of the above embodiment, the base cleaning S6 is performed after the protective device cleaning S5, but the protective device cleaning S5 and the base cleaning S6 can also be performed in parallel. This further reduces the inefficiency of loading and unloading.

[0139] The embodiments of the present invention have been described in detail above. However, these are merely specific examples used to clarify the technical content of the present invention and should not be interpreted as limiting the present invention to these specific examples. The scope of the present invention is limited only by the appended claims.

[0140] This application corresponds to patent application No. 2016-187249 filed with the Japan Patent Office on September 26, 2016, the entire disclosure of which is incorporated herein by reference.

Claims

1. A substrate processing method, comprising: The substrate holding process uses a substrate clamp that holds the substrate horizontally by spacing it upwards from the upper surface of the base. The rotation process involves rotating the substrate held by the substrate clamp together with the base about a rotation axis extending in the vertical direction. In the processing liquid supply process, processing liquid is supplied to the upper surface of the substrate held by the substrate clamp; The substrate upper surface cleaning process is performed after the processing liquid supply process, wherein cleaning liquid is supplied to the upper surface of the substrate held by the substrate clamp to rinse the processing liquid on the upper surface of the substrate. The cleaning solution supply process is performed after the cleaning process on the upper surface of the substrate. While the substrate is held in the substrate clamp, a cleaning solution for rinsing the processing solution adhering to the upper surface of the base is supplied to the upper surface of the base in such a way that the cleaning solution on the base does not come into contact with the lower surface of the substrate. The substrate cleaning continuous process is performed in parallel with the cleaning solution supply process, and the supply of the cleaning solution to the upper surface of the substrate is continued in the substrate upper surface cleaning process. In the liquid film formation process, the rotation of the base is slowed down so that the rotation speed of the substrate in the cleaning liquid supply process is lower than the rotation speed of the substrate in the processing liquid supply process, so as to form a liquid film of the cleaning liquid covering the upper surface of the base without the cleaning liquid contacting the lower surface of the substrate. A flow rate adjustment process is used to adjust the flow rate of the cleaning fluid supplied to the upper surface of the substrate, such that the flow rate of the cleaning fluid supplied to the upper surface of the substrate during the substrate cleaning continuous process is less than the flow rate of the cleaning fluid supplied to the upper surface of the substrate during the substrate upper surface cleaning process. as well as In the removal process, the supply of cleaning fluid to the upper surface of the substrate in the upper surface cleaning process is continued, and the supply of cleaning fluid to the upper surface of the base in the cleaning fluid supply process is stopped, and the cleaning fluid is removed from the upper surface of the base. as well as The rotation process includes accelerating the rotation of the base so that the rotation speed of the base in the discharge process is higher than the rotation speed of the base in the cleaning fluid supply process. The flow rate adjustment process includes adjusting the flow rate of the cleaning fluid supplied to the upper surface of the substrate such that, during the execution of the removal process, the flow rate of the cleaning fluid supplied to the upper surface of the substrate during the substrate cleaning continuous process is greater than, during the execution of the cleaning fluid supply process, the flow rate of the cleaning fluid supplied to the upper surface of the substrate during the substrate cleaning continuous process.

2. The substrate processing method according to claim 1, wherein, Also includes: After the removal process, the rotation process continues to remove the cleaning solution from the substrate and dry the substrate.

3. The substrate processing method according to claim 1 or 2, wherein, The rotation process includes: a process of decelerating the rotation of the base so that the rotation speed of the base in the cleaning fluid supply process is lower than the rotation speed of the base in the substrate surface cleaning process; and a process of accelerating the rotation of the base so that the rotation speed of the base in the substrate drying process is higher than the rotation speed of the base in processes performed before the substrate drying process.

4. The substrate processing method according to claim 1 or 2, wherein, The cleaning fluid supply process includes the process of supplying the cleaning fluid from a nozzle exposed on the upper surface of the base to the upper surface of the base.

5. The substrate processing method according to claim 1 or 2, wherein, The cleaning fluid supply process includes: supplying the cleaning fluid to the upper surface of the base in a manner that prevents the cleaning fluid from adhering to the lower surface of the substrate, and rinsing off the processing fluid adhering to the upper surface of the base without cleaning the lower surface of the substrate.

6. The substrate processing method according to claim 1 or 2, wherein, The treatment solution is the first treatment solution. The substrate processing method further includes a second processing liquid supply step, wherein after the removal step, a second processing liquid different from the first processing liquid is supplied to the upper surface of the substrate.

7. The substrate processing method according to claim 6, wherein, The first treatment solution is one of an acidic aqueous solution and an alkaline aqueous solution, while the second treatment solution is the other of an acidic aqueous solution and an alkaline aqueous solution.

8. A substrate processing method, comprising: The substrate holding process uses a substrate clamp that holds the substrate horizontally by spacing it upwards from the upper surface of the base. In the process of supplying processing liquid, processing liquid is supplied to the upper surface of the substrate held by the substrate clamp. The cleaning fluid supply process is performed after the processing fluid supply process. While the substrate is held by the substrate clamp, a cleaning fluid for rinsing the processing fluid adhering to the upper surface of the base is supplied to the upper surface of the base, and the cleaning fluid is supplied to the upper surface of the base in such a way that the cleaning fluid on the base does not come into contact with the lower surface of the substrate held by the substrate clamp. The cleaning solution is removed from the upper surface of the base during the removal process. The substrate upper surface cleaning process is performed after the processing liquid supply process and before the cleaning liquid supply process, wherein cleaning liquid is supplied to the upper surface of the substrate held by the substrate clamp to rinse the processing liquid on the upper surface of the substrate. In the process of configuring protective devices, during the process of supplying the processing liquid, a plurality of protective devices are configured at a position where any one of a plurality of protective devices having a cylindrical portion that surrounds the substrate when viewed from above and an extension portion that extends radially inward from the cylindrical portion receives the liquid that splashes from the substrate. as well as In the protective device cleaning process, during the execution of the cleaning process on the upper surface of the substrate, the extended installation portions of the plurality of protective devices are brought close to each other in the vertical direction, thereby cleaning the extended installation portions of the plurality of protective devices using liquid that is splashed from the substrate.

9. The substrate processing method according to claim 8, wherein, Also includes: The substrate cleaning continuous process is performed in parallel with the cleaning solution supply process, and the supply of the cleaning solution to the upper surface of the substrate is continued in the substrate upper surface cleaning process. The substrate cleaning continuous process includes a process of continuously supplying cleaning fluid to the upper surface of the substrate even after the removal process has begun.

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